Publications Philipp Lindorfer
13 recordsPublications in Scientific Journals
2. | S. Halama, F. Fasching, C. Fischer, H. Kosina, E. Leitner, P. Lindorfer, C. Pichler, H. Pimingstorfer, H. Puchner, G. Rieger, G. Schrom, T. Simlinger, M. Stiftinger, H. Stippel, E. Strasser, W. Tuppa, K. Wimmer, S. Selberherr: "The Viennese Integrated System for Technology CAD Applications"; Microelectronics Journal, 26 (1995), 137 - 158. https://doi.org/10.1016/0026-2692(95)98918-H | |
1. | M. Thurner, P. Lindorfer, S. Selberherr: "Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9 (1990), 11; 1189 - 1197. https://doi.org/10.1109/43.62756 | |
Talks and Poster Presentations (with Proceedings-Entry)
8. | H. Kosina, P. Lindorfer, S. Selberherr: "Monte-Carlo-Poisson Coupling Using Transport Coefficients"; Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 1991-09-16 - 1991-09-19; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1; 53 - 56. https://doi.org/10.1016/0167-9317(91)90182-D | |
7. | P. Lindorfer, J. Ashworth, S. Selberherr: "Simulation of GaAs Power and Low Noise Microwave Devices with MINIMOS"; Talk: European Microwave Conference, Stuttgart (invited); 1991-09-09 - 1991-09-13; in: "Proceedings 21st European Microwave Conference", (1991), 173 - 179. | |
6. | J. Ashworth, P. Lindorfer: "Analysis of the Breakdown Phenomena in GaAs MESFET's"; Talk: Gallium Arsenide and Related Compounds Conference, Jersey; 1990; in: "Proceedings GaAs and Related Compounds", (1990). | |
5. | P. Dickinger, P. Lindorfer, G. Nanz, S. Selberherr: "Connection of Network and Device Simulation"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 1990-06-03 - 1990-06-04; in: "NUPAD III Techn. Digest", (1990), 73 - 74. | |
4. | P. Lindorfer, S. Selberherr: "GaAs-MESFET Simulation with MINIMOS"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego; 1989-10-22 - 1989-10-25; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1989), 277 - 280. https://doi.org/10.1109/GAAS.1989.69342 | |
3. | P. Lindorfer, S. Selberherr: "MESFET Analysis with MINIMOS"; Talk: European Solid-State Device Research Conference (ESSDERC), Berlin; 1989-09-11 - 1989-09-14; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1989), ISBN: 3-540-51000-1; 92 - 96. https://doi.org/10.1007/978-3-642-52314-4_18 | |
2. | O. Heinreichsberger, P. Habas, P. Lindorfer, G. Mayer, S. Selberherr, M. Stiftinger: "Neuere Entwicklungen bei MINIMOS"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 1989-08-02 - 1989-08-03; in: "Proceedings NuTech 89", (1989), 7. | |
1. | M. Thurner, P. Lindorfer, S. Selberherr: "Numerical Treatment of Nonrectangular Field-Oxide for 3D MOSFET Simulation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 1988-09-26 - 1988-09-28; in: "Proceedings SISDEP 88", (1988), 375 - 381. | |
Doctor's Theses (authored and supervised)
1. | P. Lindorfer: "Numerische Simulation von Galliumarsenid MESFETs"; Supervisor, Reviewer: S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1991; oral examination: 1991-03-15. | |
Diploma and Master Theses (authored and supervised)
2. | P. Lindorfer: "An Ideality Factor Formulation of Schottky Boundary Conditions in Numerical Device Simulation"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Grönenbach; 1991-05-14 - 1991-05-17. | |
1. | P. Lindorfer: "JANICS - ein Programm zur Übersetzung von Schaltungsbeschreibungen für die computerunterstützte Netzwerkanalyse"; Supervisor: S. Selberherr, J. Demel; Institut für Allgemeine Elektrotechnik und Elektronik, 1987. | |