5.6.3 Calibration of a Model for Silicon Self-Interstitial Cluster Formation and

The formation and dissolution of Silicon self-interstitial clusters is attributable to transient enhanced diffusion (TED). TED is the fast redistribution of impurities that takes place in the very first thermal step right after implantation. An accurate simulation of transient enhanced diffusion plays an important role in the manufacturing process of sub micron semiconductor devices [109,110]. A well calibrated model is thereby a prerequisite for an accurate simulation of the transient enhanced diffusion.

In [111] the source for the Silicon self-interstitials was identified to be $ \{113\}$ defects which are rod like clusters of interstitials. Counting the number of interstitials is a complicated task. Transmission electron microscopes are used to measure the number of interstitials in each defect. In this application a diffusion model of the TSUPREM-IV simulator is calibrated to a set of measurements published in [112]. The measurements were carried out a temperatures $ 670^\circ\mathrm{C}$, $ 705^\circ\mathrm{C}$, $ 738^\circ\mathrm{C}$, and $ 815^\circ\mathrm{C}$. Fig. 5.27 depicts the measured curves at the different temperatures.

Figure 5.27: Silicon self-interstitial density (stored in $ \{113\}$ or $ \{311\}$ defects) in $ cm^{-3}$ as a function of time for different annealing temperatures. The implants were performed with a dose of $ 5\cdot 10^{13} cm^{-2}$ and at an energy of $ 40keV$.
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