VLSI Performance Metric Based on Minimum TCAD Simulations

G. Schrom ¹, V. De ², and S. Selberherr ¹

¹ Institute for Microelectronics, TU Vienna
Gusshausstrasse 27-29, A-1040 Vienna, Austria
http://www.iue.tuwien.ac.at/

² Microcomputer Research Labs (MRL) Intel Corp.
M/S EY2-07, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA
http://www.intel.com/

Abstract:

A new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations is proposed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics, and the methods to determine these parameters from the device data are described.

1 Introduction
2 System Model
3 Device Simulation
4 Key Parameters and Informational Parameters
5 Dynamic Inverter Model
6 Power Consumption
7 Noise Margins, Inverter Gain, and Output Swing
8 Application
9 Conclusion
References

G. Schrom, V. De, and S. Selberherr: VLSI Performance Metric Based on Minimum TCAD Simulations