Impact of Charge Transitions at Atomic Defect Sites on Electronic Device Performance
List of Publications
Journal Articles
-
[1] C. Wilhelmer, M. E. Turiansky, D. Waldhoer, L. Cvitkovich, C. G. Van de Walle, T. Grasser, "Optical properties of vacancies in
-Al O from first principles", in preparation, (2024). -
[2] H. Ravichandran, T. Knobloch, S. Radhakrishnan, C. Wilhelmer, S. Stepanoff, B. Stampfer, S. Ghosh, A. Oberoi, D. Waldhoer, C. Chen, J. Redwing, D. Wolfe, T. Grasser, S. Das, "A stochastic encoder using point defects in two-dimensional materials", Nature Communications, 15 (1), 10562, (2024), doi:10.1038/s41467-024-54283-1.
-
[3] L. Cvitkovich, F. Fehringer, C. Wilhelmer, D. Waldhoer, T. Grasser, "Machine learning force field for thermal oxidation of silicon", The Journal of Chemical Physics, 161 (14), 144706, (2024), doi:10.1063/5.0220091.
-
[4] L. Cvitkovich, P. Stano, C. Wilhelmer, D. Waldhoer, D. Loss, Y.-M. Niquet, T. Grasser, "Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits", Physical Review Applied, under review (2024), arXiv:arXiv:2405.10667.
-
[5] C. Wilhelmer, D. Waldhoer, L. Cvitkovich, D. Milardovich, M. Waltl, T. Grasser, "Polaron formation in the hydrogenated amorphous silicon nitride Si
N :H", Physical Review B, 110, 045201, (2024), doi:10.1103/PhysRevB.110.045201 -
[6] C. Wilhelmer, D. Waldhoer, D. Milardovich, L. Cvitkovich, M. Waltl, T. Grasser, "Over- and undercoordinated atoms as a source of electron and hole traps in amorphous silicon nitride (
-Si N )", Nanomaterials, 13, 2286, (2023), doi:10.3390/nano13162286 -
[7] D. Milardovich, C. Wilhelmer, D. Waldhoer, L. Cvitkovich, G. Sivaraman, T. Grasser, "Machine learning interatomic potential for silicon-nitride (Si
N ) by active learning", The Journal of Chemical Physics, 158, 194802, (2023), doi:10.1063/5.0146753 -
[8] L. Cvitkovich, D. Waldhör, A.-M. El-Sayed, M. Jech, C. Wilhelmer, T. Grasser, "Dynamic modeling of Si(100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation", Applied Surface Science, 610, 155378, (2023), doi:10.1016/j.apsusc.2022.155378
-
[9] C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser, "Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture", Microelectronics Reliability, 139, 114801, (2022), doi:10.1016/j.microrel.2022.114801
Conference Proceedings
-
[1] R.Ghosh, T. Knobloch, A. Karl, C. Wilhelmer, A. Provias, D. Waldhoer, T. Grasser, “Modeling the impact of interface and border traps on hysteresis in encapsulated monolayer MoS
based double gated FETs”, in 32 Austrian Workshop on Microelectronics - Austrochip 2024, 25.-26. September 2024, Vienna, Austria, doi:10.1109/Austrochip62761.2024.10716217 -
[2] C. Wilhelmer, D. Waldhoer, D. Milardovich, L. Cvitkovich, M. Waltl, T. Grasser, “Intrinsic electron trapping in amorphous silicon nitride
( -Si N :H)”, in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 149-152, 27.-29. September 2023, Kobe, Japan, doi:10.23919/SISPAD57422.2023.10319493 -
[3] L. Cvitkovich, B. Sklénard, D. Waldhoer, J. Li, C. Wilhelmer, G. Veste, Y.-M. Niquet, T. Grasser, “Variability in Si/SiGe and Si/SiO2 spin qubits due to interfacial disorder”, in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 341-344, 27.-29. September 2023, Kobe, Japan, doi:10.23919/SISPAD57422.2023.10319618
-
[4] C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser, “Metastability of negatively charged hydroxyl-E’ centers and their potential role in positive bias temperature instabilities”, in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), pp. 376-379, 19.-22. September 2022, Milan, Italy, doi:10.1109/ESSDERC55479.2022.9947111
-
[5] L. Cvitkovich, D. Waldhör, M. Jech, A.-M. El-Sayed, C. Wilhelmer, T. Grasser, “Multiscale modeling study of native oxide growth on a Si (100) surface”, in ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), pp. 235-238, 13.-22. September 2021, Grenoble, France, doi:10.1109/ESSDERC53440.2021.9631790
-
[6] C. Wilhelmer, M. Jech, D. Waldhör, A.-M. El-Sayed, L. Cvitkovich, T. Grasser, “Statistical ab initio analysis of electron trapping oxide defects in the Si/SiO
network”, in ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), pp. 243-246, 13.-22. September 2021, Grenoble, France, doi:10.1109/ESSDERC53440.2021.9631833
Conference Contributions
-
[1] C. Wilhelmer, D. Waldhör, L. Cvitkovich, M. Waltl, T. Grasser, “Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO
”, in SiO2 2023 - The 14th international conference on SiO2, advanced dielectrics and related devices, Talk, 12.-14. June 2023, Palermo, Italy -
[2] L. Cvitkovich, D. Waldhör, A.-M. El-Sayed, M. Jech, C. Wilhelmer, T. Grasser, “Variability in Si/SiGe and Si/SiO
spin qubits due to interfacial disorder”, in SiO2 2023 - The 14th international conference on SiO2, advanced dielectrics and related devices, Talk, 12.-14. June 2023, Palermo, Italy -
[3] C. Wilhelmer, D. Milardovich, D. Waldhör, L. Cvitkovich, M. Waltl, T. Grasser, “Intrinsic charge trapping sites in amorphous Si
N ”, in European Materials Research Society 2023 Spring Meeting, 29. May - 2. June 2023, Talk, Strasbourg, France -
[4] L. Cvitkovich, B. Sklénard, D. Waldhoer, J. Li, C. Wilhelmer, Y.-M. Niquet, T. Grasser, “Variability in Si spin qubits due to disordered Si/SiO
interfaces”, in European Materials Research Society 2023 Spring Meeting, 29. May - 2. June 2023, Talk, Strasbourg, France -
[5] C. Wilhelmer, D. Milardovich, D. Waldhör, L. Cvitkovich, M. Waltl, T. Grasser, “Ab-initio study of multi-state defects in amorphous SiO
”, in Psi-k Conference, 22. - 25. August 2022, Poster, Lausanne, Switzerland -
[6] L. Cvitkovich, D. Waldhör, A.-M. El-Sayed, M. Jech, C. Wilhelmer, T. Grasser, “Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation”, in Psi-k Conference, 22. - 25. August 2022, Poster, Lausanne, Switzerland
-
[7] C. Wilhelmer, M. Jech, D. Waldhör, T. Grasser, “Ab-Initio Investigation of Hydrogen Migration in Silicon”, in Summer School MATERIALS 4.0, 17. - 21. August 2020, Poster, Dresden, Germany
-
[8] M. Taupin, Sami Dzsaber, X. Yan, C. Wilhelmer, A. Prokofiev, S. Paschen, “Experimental study of the strongly correlated Weyl semimetal Ce
Bi Pd ”, in New Generation in Strongly Correlated Electron Systems” (NGSCES 2019), 2. - 6. September 2019, Talk, Pescara, Italy