Contents

• 1. Introduction
  • 1.1 Manufacturing of Integrated Circuits
  • 1.2 Critical Issues for Device Miniaturization
  • 1.3 Trends in Doping Profiles for CMOS Technology
  • 1.4 Overview of Ion Implantation Simulation Tools
  • 1.5 Outline of the Dissertation
  
  
• 2. Semiconductor Doping Technology
  • 2.1 Fundamentals of Semiconductor Doping
  • 2.2 Ion Implantation Technology
  
  
• 3. Simulation of Ion Implantation
  • 3.1 Physical Models
  • 3.2 Monte Carlo Implantation with MCIMPL-II
  
  
• 4. Doping of Group-IV-Based Materials
  • 4.1 Silicon-Germanium Alloys
  • 4.2 Strained-Si/SiGe Heterostructure
  • 4.3 Germanium
  
  
• 5. NBTI Reliability Analysis
  • 5.1 NBTI Experiments for a 90nm CMOS Technology
  • 5.2 Reaction-Diffusion Model
  • 5.3 Effect of Interface Charge
  • 5.4 Impact of NBTI Induced Degradation on the Lifetime
  
  
• 6. Applications
  • 6.1 Simulator Check on a Three-Dimensional Test Structure
  • 6.2 Source/Drain Engineering for a Strained Silicon n-MOSFET
  • 6.3 Formation of Interdigitated Germanium PIN-Photodiodes
  • 6.4 NBTI Lifetime Analysis of a CMOS SRAM Cell
  
  
• 7. Summary and Conclusion
• A. Wafer-State-Server Environment
  • A.1 Architecture of the Wafer-State-Server
  • A.2 WSS File Format
  
  
• Bibliography
• Own Publications