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D i s s e r t a t i o n

Behavior of SiC-MOSFETs
under Temperature and Voltage Stress

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften
unter der Leitung von
Univ.Prof. DI. Dr. techn. Tibor GRASSER
Institut für Mikroelektronik
eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik und Informationstechnik
Gerald Rescher
Selesen 1
A-9371 Brückl, Österreich

Wien, am 01. September 2018



Central findings of this thesis base on material which has been partly published in journal publications and conference proceedings. According to the consensus of several guidelines of Austrian funding agencies and Austrian Universities regarding proper scientific work, the ideas of these publications are re-used with explicit citation at several positions in this thesis. The thesis puts the individual topics of the publications together with unreported topics into a larger context.

Statutory declaration

I declare that I have authored this thesis independently, that I have not used other than the declared sources / resources, and that I have explicitly marked all material which has been quoted either literally or by content from the used sources.

November 29, 2018  

Acknowledgments / Danksagung

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