Micromagnetic modeling of SOT-MRAM dynamics Journal Article
In: Physica B: Condensed Matter, vol. 676, pp. 415612, 2024, ISSN: 0921-4526.
Multi-bit Operation in an MRAM Cell with a Composite Free Layer Proceedings Article
In: Proceedings of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), 2023, (talk: The Workshop on Innovative Nanoscale Devices and Systems (WINDS) 2023, Kona, USA, 2023-12-03 – 2023-12-08).
Numerical Simulations of Spintronic Magnetoresistive Memories Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2023, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2023-10-26).
Charge and Spin Transport in Semiconductor Devices Proceedings Article
In: Proceedings of the 2023 IEEE 15th International Conference on ASIC (ASICON), pp. 1-4, 2023, ISBN: 979-8-3503-1298-0, (invited; talk: 2023 IEEE 15th International Conference on ASIC (ASICON), Nanjing, China; 2023-10-24 – 2023-10-27).
Spin and Charge Transport in Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of the 15th International Conference Micro- and Nanoelectronics (ICMNE), 2023, ISBN: 978-5-317-07055-7, (invited; talk: 15th International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2023-10-02 – 2023-10-06).
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping Journal Article
In: Solid-State Electronics, vol. 208, pp. 108738-1 – 108738-4, 2023.
Numerical study of two-terminal SOT-MRAM Journal Article
In: Physica B: Condensed Matter, vol. 673, 2023.
Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices Proceedings Article
In: SISPAD 2023: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 357–360, 2023, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), Kobe, Japan; 2023-09-27 – 2023-09-29).
Study of Self-Heating and its Effects in SOT-STT-MRAM Proceedings Article
In: SISPAD 2023: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 337–340, 2023, ISBN: 978-4-86348-803-8, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), Kobe, Japan; 2023-09-27 – 2023-09-29).
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory Proceedings Article
In: Proceedings of the 5th International Conference on Microelectronic Devices and Technologies, pp. 28-30, 2023, ISBN: 978-84-09-53748-8, (talk: International Conference on Microelectronic Devices and Technologies (MicDAT 2023), Funchale (Madeira Island), Portugal; 2023-9-20 – 2023-09-22).
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices Proceedings Article
In: Proceedings of the 53rd European Solid-State Device Research Conference (ESSDERC), pp. 93–96, 2023, (talk: IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, Portugal; 2023-09-11 – 2023-09-14).
Modeling Emerging Spintronic Devices and Spintronic THz Emitters Proceedings Article
In: 10th International Symposium on Terahertz-Related Devices and Technologies TeraTech 2023 Technical Digest, pp. 50–51, 2023, (talk: 10th International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023), Aizu-Wakamatsu, Japan; 2023-09-04 – 2023-09-08).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells Journal Article
In: Solid-State Electronics, vol. 201, pp. 108590-1 – 108590-7, 2023.
A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices Journal Article
In: Micromachines, vol. 14, no. 8, pp. 1581, 2023.
Multi-Level Operation in Ultra-Scaled MRAM Proceedings Article
In: Proceedings 2023 IEEE Latin American Electron Devices Conference (LAEDC), pp. 1–4, 2023, (talk: 2023 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2023-07-03 – 2023-07-05).
Switching Performance of Mo-based pMTJ and dsMTJ Structures Proceedings Article
In: Book of abstracts of the International Workshop on Computationals Nanotechnology (IWCN), pp. 144-145, 2023, ISBN: 978-84-09-51107-5, (talk: International Workshop on Computationals Nanotechnology (IWCN), Barcelona, Spain; 2023-06-12 -- 2023-06-16).
Towards Efficient SOT-assisted STT-MRAM Cell Switching using Reinforcement Learning Proceedings Article
In: Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC), pp. 1, 2023, (talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2023-06-04 -- 2023-06-09).
Micromagnetic Modeling of SOT-MRAM Dynamics Proceedings Article
In: Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM), pp. 1, 2023, (talk: International Symposium on Ħysteresis Modeling and Micromagnetics (ĦMM), Vienna, Austria; 2023-06-04 -- 2023-06-07).
Impact of Spin-Flip Length in dsMTJ Pacer Layers on Switching Performance Proceedings Article
In: Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM), pp. 1, 2023, (poster: International Symposium on Ħysteresis Modeling and Micromagnetics (ĦMM), Vienna, Austria; 2023-06-04 -- 2023-06-07).
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices Proceedings Article
In: ECS Transactions, pp. 181-186, 2023.
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices Journal Article
In: ECS Transactions, vol. 111, no. 1, pp. 181-186, 2023.
Back-Hopping in Ultra-Scaled MRAM Cells Proceedings Article
In: MIPRO 2022 Proceedings, pp. 1, 2023, (talk: MIPRO 2023 - 46th International Convention - Microelectronics, Electronics and Electronic Technology, Opatja, Croatia; 2023-05-22 -- 2023-05-26).
Finite Element Approach for the Simulation of Modern MRAM Devices Journal Article
In: Micromachines, vol. 14, no. 5, pp. 898, 2023, (invited).
Switching Composite Free Layers in Ultra-Scaled MRAM Cells Presentation
12.02.2023, (talk: 22nd International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2023-02-12 -- 2023-02-17).
Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase Proceedings Article
In: 2023, (poster: 22nd International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2023-02-12 -- 2023-02-17).
Modeling thermal effects in STT-MRAM Journal Article
In: Solid-State Electronics, vol. 200, pp. 108522, 2023, ISSN: 0038-1101.
Modeling Advanced Spintronic Based Magnetoresistive Memory Book Chapter
In: 2023, ISBN: 978-1-83953-786-8, (Proceedings of the International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE)).
Finite Element Method for MRAM Switching Simulations Proceedings Article
In: Proceedings of the International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), 2023, (invited; talk: 2023 International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), Athens, Greece; 2023-01-21 -- 2023-01-23).
Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves Proceedings Article
In: Book of Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), 2023, (talk: 2023 Workshop on Innovative Nanoscale Devices and Systems (WINDS), Luhue, HI, USA; 2022-12-04 -- 2022-12-09).
Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase Proceedings Article
In: Book of abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), 2023, (talk: 2022 Workshop on Innovative Nanoscale Devices and Systems (WINDS); 2022-12-04 -- 2022-12-09).
Spin-Technology Computer-Aided Design: A Key Component of Microelectronics' Development Book Chapter
In: pp. 337-347, 2023, ISBN: 9781394202447, (75th Anniversary of the Transistor).
Magnetic and Spin Devices, Volume II Miscellaneous
2023, ISBN: 978-3-0365-9892-5.
Editorial for the Special Issue on Magnetic and Spin Devices, Volume II Miscellaneous
2023, ISBN: 978-3-0365-9892-5, (2131-1 -- 2131-4; Editorial for the Special Issue on Magnetic and Spin Devices, Volume 2";Micromachines, 14, (2023)).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach Proceedings Article
In: Proceedings of the IEEE International Electron Devices Meeting (IEDM), Special Poster Session Dedicated to MRAM, 2022, (talk: 2022 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2022-12-03 -- 2022-12-07).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells Journal Article
In: Scientific Reports, vol. 12, pp. 20958-1 – 20958-12, 2022.
Advanced Modeling of Emerging Devices for Digital Spintronics Proceedings Article
In: Proceedings of the International Conference on Nanoscience and Nanotechnology, 2022, (invited; talk: 2022 International Conference on Nanoscience and Nanotechnology, Dubai, UAE; 2022-11-17 -- 2022-11-18).
Design Analysis of Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2022, ISBN: 978-1-6654-6905-0, (invited; talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China; 2022-10-25 -- 2022-10-28).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach Journal Article
In: Journal of Systemics, Cybernetics and Informatics, vol. 20, no. 4, pp. 40 – 44, 2022, (invited).
Modeling Advanced Spintronic Based Magnetoresistive Memory Proceedings Article
In: Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE), 2022, (invited; talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; 2022-09-27 -- 2022-09-29).
Spin Torques in ULTRA-Scaled MRAM Devices Proceedings Article
In: Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 348–351, 2022, ISBN: 978-1-6654-8496-1, (talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 2022-09-20 -- 2022-09-22).
Modeling Thermal Effects in STT-MRAM Proceedings Article
In: SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 11–12, 2022, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 -- 2022-09-08).
Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices Proceedings Article
In: SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 11–12, 2022, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 -- 2022-09-08).
About Electron Transport and Spin Control in Semiconductor Devices Proceedings Article
In: SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 1–4, 2022, (invited; talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 -- 2022-09-08).
About electron transport and spin control in semiconductor devices Journal Article
In: Solid-State Electronics, vol. 197, no. 108443, 2022, (invited).
Advanced Modeling of Emerging Magnetoresistive Memory Proceedings Article
In: Proceedings of the International Meet & Expo on Nanotechnology (NANOMEET), 2022.
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach Proceedings Article
In: The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II, pp. 40–44, 20, 2022, (talk: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 2022-07-12 -- 2022-07-15).
Modeling Approach to Ultra-Scaled MRAM Cells Proceedings Article
In: Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET), pp. 7–8, 2022, (invited; talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen; 2022-06-23 -- 2022-06-25).
Simulation of Novel MRAM Devices with Enhanced Performance Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
Modeling Interfacial and Bulk Spin-Orbit torques Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy Proceedings Article
In: 2022 IEEE Latin American Electron Devices Conference (LAEDC), pp. 1–4, 978-1-6654-9768-8, 2022, ISBN: 978-1-6654-9768-8, (talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2022-06-04 -- 2022-06-06).
Reinforcement learning to reduce failures in SOT-MRAM switching Journal Article
In: Microelectronics Reliability, vol. 135, no. 114570, pp. 1–5, 2022, (invited).
Spin Transfer Torques in Ultra-Scaled MRAM Cells Proceedings Article
In: 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), pp. 129–132, 2022, ISBN: 978-953-233-103-5, (talk: MIPRO 2022, Opatija, Croatia; 2022-05-23 -- 2022-05-27).
Spin Transfer Torques in Ultra-Scaled MRAM Cells Book Section
In: 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), pp. 129–132, IEEE Xplore Digital Library, 2022, ISBN: 978-953-233-103-5.
Emerging Devices for Digital Spintronics Proceedings Article
In: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, pp. 32–33, 2022, (invited; talk: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online; 2022-05-25 -- 2022-05-26).
Finite Element Modeling of Spin-Orbit Torques Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2022, (poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 -- 2022-05-20).
Finite Element Modeling of Spin-Orbit Torque Book Section
In: Proceedings of the 2022 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2022.
Interface Effects in Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2022, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 -- 2022-05-20).
Interface Effects in Ultra-Scaled MRAM Cells Journal Article
In: Solid-State Electronics, vol. 194, pp. 108373-1–108373-4, 2022.
Double Reference Layer STT-MRAM Structures with Improved Performance Journal Article
In: Solid-State Electronics, vol. 194, pp. 108335-1–108335-4, 2022.
Finite Element Modeling of Spin-Orbit Torques Journal Article
In: Solid-State Electronics, vol. 194, pp. 108323-1–108323-4, 2022.
Magnetic and Spin Devices Book Chapter
In: MDPI, 2022, ISBN: 978-3-0365-3842-6.
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach Journal Article
In: Solid-State Electronics, vol. 193, pp. 108269-1–108269-7, 2022, (invited).
Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase Journal Article
In: Solid-State Electronics, vol. 193, pp. 108266-1–108266-8, 2022, (invited).
Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches Journal Article
In: Proceedings of SPIE, vol. 12157, pp. 1215708-1–1215708-14, 2022, (invited).
Editorial for the Special Issue on Magnetic and Spin Devices Journal Article
In: Micromachines, vol. 13, pp. 493-1–493-3, 2022.
Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches Proceedings Article
In: 2nd Global Webinar on Nanoscience & Nanotechnology, 2022, (invited; talk: 2 nd Global Webinar on Nanoscience & Nanotechnology, online; 2022-03-14 -- 2022-03-15).
Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM Proceedings Article
In: Proceedings of the 14th International MOS-AK Workshop, pp. 1, 2021, (talk: International MOS-AK Workshop, Silicon Valley, USA; 2021-12-17).
Design Support for Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM, 2021, (poster presentation: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 -- 2021-12-15).
Reinforcement Learning to Reduce Failures in SOT-MRAM Switching Proceedings Article
In: Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2021, ISBN: 978-1-6654-3988-6, (talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 -- 2021-10-15).
Enhancing SOT-MRAM Switching Using Machine Learning Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2021, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2021-10-14).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Journal Article
In: Microelectronics Reliability, vol. 126, pp. 114231-1–114231-5, 2021.
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches Proceedings Article
In: Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), 2021, ISBN: 978-5-317-06675-8, (invited; talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2021-10-04 -- 2021-10-08).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Proceedings Article
In: Proceedings of the 32nd European Symposium on the Reliability of Electron Đevices, Failure Physics and Analysis, pp. 1–4, 2021, ISSN: 0026-2714, (talk: European Symposium on Reliability of Electron Đevices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 -- 2021-10-07).
Finite Element Method Approach to MRAM Modeling Proceedings Article
In: Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO), pp. 70–73, 2021, ISBN: 978-953-233-101-1, (talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 -- 2021-10-01).
Finite Element Method Approach to MRAM Modeling Book Section
In: 2021 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)), pp. 70–73, IEEE Xplore Digital Library, 2021, ISBN: 978-953-233-101-1.
Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 -- 2021-09-29).
Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 -- 2021-09-29).
Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States Proceedings Article
In: Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition, 2021, (talk: European Solid-State Đevice Research Conference (ESSĐERC), Grenoble, France; 2021-09-13 -- 2021-09-17).
Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration Proceedings Article
In: Proceedings of the Trends in Magnetism Conference (TMAG), 2021, (talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 -- 2021-09-10).
Temperature Increase in MRAM at Writing: A Finite Element Approach Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 133–134, 2021, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).
First Principles Approach to Study Topologically Protected Edge States in 1T' MoS2 Nanoribbons Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 113–114, 2021, (poster presentation: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).
Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 52–53, 2021, (poster presentation: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).
Temperature Increase in MRAM at Writing: A Finite Element Approach Book Section
In: Bogdan Cretu (Ed.): Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1–4, IEEE, 2021, ISBN: 978-1-6654-3746-2.
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching Proceedings Article
In: Proceedings of SPIE Spintronics, pp. 11805-53, 2021, (invited; talk: SPIE Spintronics, San Diego, CA, USA - virtual; 2021-08-01 -- 2021-08-05).
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching Journal Article
In: Proceedings of SPIE, vol. 11805, pp. 1180519-1–1180519-8, 2021, (invited).
Heating Asymmetry in Magnetoresistive Random Access Memories Proceedings Article
In: Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), pp. 63–66, 2021, ISBN: 978-1-950492-55-8, (talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 2021-07-18 -- 2021-07-21).
Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions Journal Article
In: Solid-State Electronics, vol. 186, pp. 108103, 2021, (invited).
Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations Journal Article
In: Solid-State Electronics, vol. 185, pp. 108075, 2021, (invited).
Subbands in a Nanoribbon of Topologically Insulating MoS2 in the 1T' Phase Journal Article
In: Solid-State Electronics, vol. 184, no. 10, pp. 108081-1–108081-9, 2021, (invited).
Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 2–3, 2021, ISBN: 978-89-89453-30-7, (talk: International Workshop on Computational Nanotechnology (IWCN), Đaejeon, Korea (Virtual); 2021-05-24 -- 2021-06-06).
Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 51–52, 2021, ISBN: 978-89-89453-30-7, (talk: International Workshop on Computational Nanotechnology (IWCN), Đaejeon, Korea (Virtual); 2021-05-24 -- 2021-06-06).
Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 45–46, 2021, ISBN: 978-89-89453-30-7, (invited; talk: International Workshop on Computational Nanotechnology (IWCN), Đaejeon, Korea (Virtual); 2021-05-24 -- 2021-06-06).
Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 49–50, 2021, ISBN: 978-89-89453-30-7, (talk: International Workshop on Computational Nanotechnology (IWCN), Đaejeon, Korea (Virtual); 2021-05-24 -- 2021-06-06).
Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning Journal Article
In: Micromachines, vol. 12, no. 4, pp. 443, 2021.
Emerging CMOS Compatible Magnetic Memories and Logic Journal Article
In: IEEE Journal of the Electron Devices Society, vol. 9, pp. 456–463, 2021, (invited).
In: Bogdan Cretu (Ed.): Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1–4, IEEE, 2021, ISBN: 978-1-6654-3745-5.
Conductance due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase Book Section
In: Bogdan Cretu (Ed.): Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1–4, IEEE, 2021, ISBN: 978-1-6654-3745-5.
Ballistic Conductance in a Topological 1 T'-MoS2 Nanoribbon Journal Article
In: Semiconductors, vol. 54, no. 12, pp. 1713–1715, 2020.
Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell Journal Article
In: IEEE Journal of the Electron Devices Society, pp. 1-1, 2020.
Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T' Phase Journal Article
In: IEEE Transactions on Electron Devices, vol. 67, no. 11, pp. 4687–4690, 2020.
Modeling Spin Transfer Torque Magnetoresistive Memory Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2020, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2020-10-20).
Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 213–216, 2020, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 -- 2020-10-06).
Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 209–212, 2020, (talk: International Conference on Simulation of Semiconductor Processes and Đevices (SISPAĐ), Kobe, Japan - virtual; 2020-09-23 -- 2020-10-06).
Analytical Formulae for the Surface Green's Functions of Graphene and 1T' MoS2 Nanoribbons Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 185–188, 2020, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 -- 2020-10-06).
Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 112–113, 2020, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 -- 2020-09-30).
Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 123–124, 2020, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 -- 2020-09-30).
Topologically Protected and Conventional Subbands in a 1T'-MoS2 Nanoribbon Channel Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 68–69, 2020, (poster presentation: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 -- 2020-09-30).
Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents Proceedings Article
In: Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), pp. 58–61, 2020, ISBN: 978-1-950492-37-4, (talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 2020-09-13 -- 2020-09-16).
Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM Journal Article
In: IEEE Journal of the Electron Devices Society, vol. 8, pp. 1249–1256, 2020, (invited).
Ballistic Conductance in a Topological 1T'-MoS2 Nanoribbon Journal Article
In: pp. 200–201, 2020, ISBN: 978-5-93634-066-6, (poster presentation: International Symposium on Nanostructures: Physics and Ŧechnology (NANO), Minsk, Belarus - virtual; 2020-09-28 -- 2020-10-02).
Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells Proceedings Article
In: pp. 50–56, 2020, (invited; talk: SPIE Spintronics, San Diego, CA, USA - virtual; 2020-08-24 -- 2020-08-28).
Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells Journal Article
In: Proceedings of SPIE, vol. 11470, pp. 50–56, 2020, (invited).
In: Andrzej Napieralski (Ed.): Proceedings of the 27st International Conference Mixed Design of Integrated Circuits and Systems, pp. 168–171, Springer, 2020, ISBN: 978-83-63578-17-6.
Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k.p Study Proceedings Article
In: Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), pp. 58, 2020, (talk: International Conference on Mixed Đesign of Integrated Circuits and Systems (MIXĐES), Lodz, Poland - virtual; 2020-06-25 -- 2020-06-27).
Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM Proceedings Article
In: Abstracts of the Meeting of the Electrochemical Society (ECS), MA2020-01/1389, 2020, (talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 2020-05-10 -- 2020-05-14).
Influence of Current Redistribution in Switching Models for Perpendicular ST-MRAM Book Section
In: J A Martino; B -Y Nguyen; Francisco Gamiz; H Ishii; J -P Raskin; Siegfried Selberherr; E Simoen (Ed.): Advanced CMOS-Compatible Semiconductor Đevices 19, Vol. 97, No. 5, pp. 159–164, ECS Ŧransactions, 2020, ISBN: 978-1-62332-604-3.
Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current Proceedings Article
In: Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM), pp. 341–344, 2020, ISBN: 978-1-7281-2539-8, (talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia; 2020-03-16 -- 2020-03-18).
Emerging CMOS Compatible Magnetic Memories and Logic Proceedings Article
In: Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC), 2020, ISBN: 978-1-7281-1044-8, (invited; talk: IEEE Latin America Electron Đevices Conference (LAEDC), San Jose, Costa Rica; 2020-02-25 -- 2020-02-28).
Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer Journal Article
In: Physica B: Condensed Matter, vol. 578, pp. 411743, 2020.
Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM Journal Article
In: Solid-State Electronics, vol. 168, pp. 107730, 2020.
Comprehensive Modeling of Switching in Perpendicular STT-MRAM Proceedings Article
In: Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), pp. 107–108, 2019, ISBN: 978-0-578-61722-0, (poster presentation: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 -- 2019-12-06).
Robustness of the Two-Pulse Switching Scheme for SOT-MRAM Proceedings Article
In: Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), pp. 54–55, 2019, ISBN: 978-0-578-61722-0, (talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 -- 2019-12-06).
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM Proceedings Article
In: Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 146–149, 2019, ISSN: 2378-6558, (talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 -- 2019-09-26).
Large-Scale Finite Element Micromagnetics Simulations using Open Source Software Unpublished
2019, (poster presentation: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 -- 2019-09-19).
Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells Unpublished
2019, (poster presentation: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 -- 2019-09-19).
Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Đevices (SISPAĐ), pp. 57–60, 2019, ISBN: 978-1-7281-0938-1, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 -- 2019-09-06).
Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts Journal Article
In: Solid-State Electronics, vol. 159, pp. 43 - 50 , 2019.
Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques Journal Article
In: Proceedings of SPIE, vol. 11090, pp. 110903F-1–110903F-6, 2019, (invited).
Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques Proceedings Article
In: Proceedings of SPIE, 2019.
Shot Noise in Magnetic Tunnel Junctions Proceedings Article
In: Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II, pp. 19–22, 2019, ISBN: 978-1-950492-09-1, (talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 2019-07-06 -- 2019-07-09).
Spin-Based CMOS-Compatible Memories Proceedings Article
In: Proceedings of the International Nanoelectronics Conferences (INEC), 2019, ISSN: 2159-3531, (invited; talk: International Nanoelectronics Conference (INEC), Kuching, Malaysia; 2019-07-03 -- 2019-07-05).
Spin-based Electronics: Recent Developments and Trends Proceedings Article
In: Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures, pp. 7, 2019.
Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell Unpublished
2019, (invited; talk: LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France; 2019-06-28).
12th International Conference on Large-Scale Scientific Computations, June 10 - 14, 2019 Sozopol, Bulgaria, 2019, (12th International Conference on Large-Scale Scientific Computations, June 10 - 14, 2019 Sozopol, Bulgaria).
Hopping in a Multiple Ferromagnetic Terminal Configuration Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 75 - 77, 2019, ISBN: 978-3-9504738-0-3.
Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells Proceedings Article
In: Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM), pp. 151 - 153, 2019, ISBN: 978-1-5386-6508-4.
Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM Proceedings Article
In: Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM), pp. 34, 2019, (talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 2019-05-19 -- 2019-05-22).
Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 69–71, 2019, ISBN: 978-3-9504738-0-3, (talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 -- 2019-05-24).
Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM Journal Article
In: Solid-State Electronics, vol. 155, pp. 49–56, 2019.
Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM Proceedings Article
In: Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 152–153, 2019, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 2019-04-01 -- 2019-04-03).
A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques Proceedings Article
In: A special poster session dedicated to MRAM Proceedings, 2019, (poster presentation: International Electron Đevices Meeting (IEĐM), San Francisco, USA; 2019-12-07 -- 2019-12-11).
CMOS Technology Compatible Magnetic Memories Proceedings Article
In: Proceedings of the International Symposium on Next Generation Electronics (ISNE), 2019, ISBN: 978-1-7281-2062-1, (invited; talk: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China; 2019-10-09 -- 2019-10-10).
Spintronic Memories Proceedings Article
In: Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN), pp. 19–21, 2019, (invited; talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China; 2019-12-16 -- 2019-12-19).
Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing Journal Article
In: Facta universitatis - series: Electronics and Energetics, vol. 31, no. 4, pp. 529–545, 2018, (invited).
Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching Proceedings Article
In: Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), pp. 124–125, 2018, ISBN: 978-3-901578-32-8, (invited; poster presentation: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2018-11-25 -- 2018-11-30).
Shot Noise Enhancement at Spin-dependent Hopping Proceedings Article
In: Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), pp. 6–7, 2018, ISBN: 978-3-901578-32-8, (invited; talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2018-11-25 -- 2018-11-30).
A Single-Spin Switch Proceedings Article
In: Conference Abstract Book, 2018, (invited; talk: International Electron Đevices & Materials Symposium (IEĐMS), Keelung, Ŧaiwan; 2018-11-13 -- 2018-11-15).
Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon Film Journal Article
In: Journal of Computational Electronics, vol. 18, no. 1, pp. 28–36, 2018.
Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM Proceedings Article
In: Poster: in "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018, 2018.
Actual Problems in the Field of Spintronics Journal Article
In: Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018, vol. 40, 2018, (Invited Paper).
Electron Spin for Modern and Future Microelectronics Proceedings Article
In: Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018, pp. 7, 2018, ISBN: 978-5-317-05917-0, (invited; talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2018-10-01 -- 2018-10-05).
Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Đevices (SISPAD), pp. 186–189, 2018, ISBN: 978-1-5386-6788-0, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 -- 2018-09-26).
Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor Proceedings Article
In: Proceedings of SPIE Spintronics, pp. 10732-112, 2018, (invited; talk: SPIE Spintronics, San Điego, CA, USA; 2018-08-19 -- 2018-08-23).
Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor Journal Article
In: Proceedings of SPIE, vol. 10732, pp. 1073235-1–1073235-8, 2018, (invited).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field Journal Article
In: Journal on Systemics, Cybernetics and Informatics, vol. 16, no. 2, pp. 55–59, 2018, (invited).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field Proceedings Article
In: Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), pp. 30–32, 2018, ISBN: 978-1-941763-81-0, (talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 2018-07-08 -- 2018-07-11).
Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field Proceedings Article
In: Abstracts Advanced Research Workshop Future Ŧrends in Microelectronics: Vingt Ans Après, pp. 51, 2018, (poster presentation: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 -- 2018-06-16).
Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch Proceedings Article
In: Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après, pp. 49, 2018, (poster presentation: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 -- 2018-06-16).
Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells Proceedings Article
In: Proceedings of the 233rd ECS Meeting (ECS), 85/213, 2018, ISSN: 2151-2043, (talk: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 2018-05-13 -- 2018-05-17).
Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices Journal Article
In: Solid-State Electronics, vol. 199, pp. 108491-1 – 108491-4, 0202.