Own Publications

• [1]  T. Aichinger, M. Nelhiebel, S. Einspieler, and T. Grasser, “Observing two stage recovery of gate oxide damage created under negative bias temperature stress,” J.Appl.Phys., vol. 107, pp. (024508–1)–(024508–8), 2010.

• [2]  T. Aichinger, M. Nelhiebel, and T. Grasser, “Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen,” Appl.Phys.Lett., vol. 96, pp. (133511–1)–(133511–3), 2010.

• [3]  T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, and H. Hutter, “Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress,” in Proc.IRPS, 2010, pp. 1063–1068.

• [4]  T. Aichinger, M. Nelhiebel, and T. Grasser, “Investigation of the NBTI mechanism by low temperature characterization of arbitrarily stressed PMOS devices,” IEEE Trans.Elect.Dev., 2010, submitted for publication.

• [5]  T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, and B. Kaczer, “The ‘permanent’ component of NBTI: Creation, composition, and annealing,” in Proc.IIRW, 2010, submitted for publication.

• [6]  T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, P. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, P. Roussel, and M. Nelhiebel, “Recent advances in understanding the bias temperature instability,” in Proc.IEDM, 2010, submitted for publication.

• [7]  G. Pobegen, T. Aichinger, M. Nelhiebel, and T. Grasser, “Dependence of the negative bias temperature instability on the gate oxide thickness,” in Proc.IRPS, 2010, pp. 1073–1077.

• [8]  T. Aichinger, M. Nelhiebel, and T. Grasser, “Unambiguous identification of the NBTI recovery mechanism using ultra fast temperature changes,” in Proc.IRPS, 2009, pp. 2–7.

• [9]  T. Aichinger, M. Nelhiebel, and T. Grasser, “A combined study of p- and n-channel MOS devices to investigate the energetic distribution of oxide traps after NBTI,” IEEE Trans.Elect.Dev., vol. 56, no. 12, pp. 3018–3026, 2009.

• [10]  T. Aichinger, M. Nelhiebel, S. Einspieler, and T. Grasser, “In-situ polyheater, a reliable tool for performing fast and defined temperature switches on chip,” IEEE Trans.Dev.Mater.Rel., vol. 76, no. 7, pp. 1–7, 2009.

• [11]  T. Grasser, B. Kaczer, W. Gös, T. Aichinger, P. Hehenberger, and M. Nelhiebel, “A two-stage model for negative bias temperature instability,” in Proc.IRPS, 2009, pp. 33–44.

• [12]  T. Grasser, B. Kaczer, W. Gös, T. Aichinger, P. Hehenberger, and M. Nelhiebel, “Understanding negative bias temperature instability in the context of hole trapping,” Microelectron.Eng., vol. 86, no. 7-9, pp. 1876–1882, 2009.

• [13]  P. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, and M. Nelhiebel, “Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique,” in Proc.IRPS, 2009, pp. 1033–1038.

• [14]  T. Grasser, H. Reisinger, W. Gös, T. Aichinger, P. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, and B. Kaczer, “Switching oxide traps as the missing link between negative bias temperature instability and random telegraph signal,” in Proc.IEDM, 2009, pp. 1–4.

• [15]  P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, and K.J. Vandamme, “Possible correlation between flicker noise and bias temperature stress,” in Proc.ICNF, 2009, pp. 621–624.

• [16]  T. Aichinger, M. Nelhiebel, and T. Grasser, “On the temperature dependence of NBTI recovery,” in Proc.ESREF, 2008, pp. 1178–1184.

• [17]  T. Aichinger, M. Nelhiebel, and T. Grasser, “On the temperature dependence of NBTI recovery,” Microelectron.Reliab., vol. 48, no. 3, pp. 1178–1184, 2008.

• [18]  T. Aichinger and M. Nelhiebel, “Advanced energetic and lateral sensitive charge pumping profiling methods for MOSFET device characterization, analytical discussion and case studies,” IEEE Trans.Dev.Mater.Rel., vol. 8, no. 8-9, pp. 509–518, 2008.

• [19]  T. Grasser, B. Kaczer, T. Aichinger, W. Gös, and M. Nelhiebel, “Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO, SiON, and high– gate stacks,” in Proc.IIRW, 2008, pp. 91–95.

• [20]  T. Aichinger and M. Nelhiebel, “Charge pumping revisited, the benefits of an optimized constant base level charge pumping technique for MOSFET analysis,” in Proc.IIRW, 2007, pp. 63–69.

Acronyms

APC anomalous positive charge.

BEOL back-end of line.

BTI bias temperature instability.

BTS bias temperature stress.

CP charge pumping.

CV capacitance voltage.

DLTS deep level transient spectroscopy.

DOS density of states.

DUT device under test.

EPR electron paramagnetic resonance.

ESR electron spin resonance.

fWLR fast wafer level reliability.

GOX gate oxide.

HCI hot carrier injection.

HDL Harry Diamond Laboratory.

HF hydrofluoric.

HV high voltage.

LPCVD low pressure chemical vapor deposition.

MOS metal oxide semiconductor.

MOSFET metal oxide semiconductor field effect transistor.

MSM measure/stress/measure.

NBTI negative bias temperature instability.

NBTS negative bias temperature stress.

NMOS n-channel metal oxide semiconductor.

NO nitrided oxide.

OFIT on-the-fly interface trapping.

OTF on-the-fly.

PBTI positive bias temperature instability.

PECVD plasma enhanced chemical vapor deposition.

PMD post metal dielectric.

PMOS p-channel metal oxide semiconductor.

PNO plasma nitrided oxide.

RONO re-oxidized nitroxide.

RTNO rapid thermal oxynitridation.

SDR spin dependent recombination.

Si silicon.

SiN silicon nitride.

SiO silicon dioxide.

SiON silicon oxynitride.

SNIT silicon nitride.

SRH Shockley Read Hall.

TDDB time dependent dielectric breakdown.

TNO thermally nitrided oxide.

TOFSIMS time of flight secondary ion mass spectrometry.

Symbols

effective gate area during charge pumping in cm.

oxide capacitance in F/cm.

density of interface traps in eV cm.

conduction band edge in eV.

Fermi level within the polysilicon gate in eV.

Fermi level within the silicon substrate in eV.

Fermi level position at the threshold voltage in eV.

Fermi level in eV.

silicon bandgap in eV.

oxide field during recovery in V/cm.

oxide field during stress in V/cm.

oxide field in V/cm.

valence band edge in eV.

amphotheric transition level in eV.

medium dissociation energy in eV.

electron emission boundary in eV.

hole emission boundary in eV.

intrinsic Fermi level in eV.

charge pumping current measured during CP MSM in A.

charge pumping current measured during OFIT in A.

maximum charge pumping current in A.

linear drain current in A.

saturation drain current in A.

drain current measured during MSM in A.

drain current measured during OTF in A.

drain current in A.

acceptor doping density in cm.

total number of pumped charges per area in cm.

effective density of states in the conduction band in cm.

donor doping density in cm.

effective density of states in the valence band in cm.

number of interface traps in cm.

polyheater power in W.

bulk charge density C/cm.

pumped charge per area in C/cm.

locked-in oxide charge C/cm.

recoverable oxide charge C/cm.

electron charge density C/cm.

hole charge density C/cm.

permanent interface charge C/cm.

thermal resistivity of the device in K/W.

thermal resistivity of the polyheater in K/W.

on resistance of the device in .

resistance of the polyheater in .

device temperature in K.

polyheater temperature in K.

recovery temperature in K.

stress temperature in K.

saturation drain voltage in V.

drain voltage in V.

charge pumping threshold voltage in V.

flat band voltage in V.

base level of the gate pulse in V.

high level of the gate pulse during CP MSM in V.

high level of the gate pulse during OFIT in V.

high level of the gate pulse in V.

gate voltage during read-out in V.

gate voltage during stress in V.

voltage drop across the gate oxide in V.

voltage drop within the poly gate junction in V.

charge pumping threshold voltage in V.

threshold voltage in V.

general thermodynamical barrier in eV.

active energy range during charge pumping in eV.

charged energy range in thermal equilibrium in eV.

increase of the charge pumping current measured during CP MSM in A.

increase of the charge pumping current measured during OFIT in A.

increase of the maximum charge pumping current in A.

increase of the charge pumping current in A.

stress induced increase of the drain current measured during OTF in A.

degradation of the drain current caused by mobility degradation in A.

degradation of the drain current caused by defect charges in A.

degradation of the drain current in A.

increase of the number of interface traps cm.

increase of the pumped charge per area in C/cm.

gate pulse amplitude in V.

threshold voltage shift measured during MSM in V.

threshold voltage shift measured during on-the-fly in V.

threshold voltage shift measured during recovery in V.

threshold voltage shift caused by mobility degradation in V.

interface state dependent threshold voltage shift in V.

threshold voltage shift caused by defect charge in V.

threshold voltage shift in V.

change in the effective carrier mobility in cm/Vs.

electric field factor during recovery in .

electric field factor during stress in .

charge pumping weight factor.

effective carrier mobility in cm/Vs.

thermal drift velocity of electrons in cm/s.

thermal drift velocity of holes in cm/s.

average density of interface traps in eVcm.

average thermal drift velocity in cm/s.

average capture cross section in cm.

bulk potential in V.

poly surface potential/band bending in V.

substrate surface potential/band bending in V.

capture cross section for electrons in cm.

capture cross section for holes in cm.

frequency of the gate pulse in Hz.

Boltzmann constant in eV/K.

effective mass in kg.

charge pumping power-law factor measured during stress.

intrinsic carrier density in cm.

power-law factor measured during OTF.

cooling delay time for degradation quenching in s.

recovery time in s.

effective stress time in s.

stress time in s.

pulse width of the gate pulse in s.

fall time of the gate pulse in s.

high time of the gate pulse in s.

low time of the gate pulse in s.

rise time of the gate pulse in s.