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Nomenclature

2D Two-Dimensional
3D Three-Dimensional
CMOS Complementary Metal-Oxide-Semiconductor
CVD Chemical Vapor Deposition
DRIE Deep Reactive Ion Etch
EM Electromigration
FEDOS Finite Element Diffusion and Oxidation Simulator
FEM Finite Element Method
GB Grain Boundary
IC Integrated Circuit
ILD Inter-Level Dielectric
IVD Inter-Via Dielectric
KKR Korringa-Kohn-Rostoker
LKKR Layer KKR
PDE Partial Differential Equations
PECVD Plasma Enhanced CVD
TCAD Technology Computer Aided Design
TSV Through Silicon Via
TTF Time to Failure
UV Ultraviolet
\( A \) Area
\( B \) Applicable Mechanical Modulus
\( C_{\mathrm {a}} \) Atom Concentration
\( c_{\mathrm {T}} \) Specific Heat Capacity
\( C_{\mathrm {v}} \) Vacancy Concentration
\( C_{\mathrm {v}}^{\mathrm {e}\mathrm {q}} \) Equilibrium Vacancy Concentration
\( d \) Grain Size
\( D_{\mathrm {a}} \) Atom Diffusion Coefficient
\( D_{\mathrm {e}\mathrm {f}\mathrm {f}} \) Effective Diffusion Coefficient
\( D_{\mathrm {G}\mathrm {B}} \) Grain Boundary Diffusion Coefficient
\( D_{\mathrm {s}} \) Surface Diffusion Coefficient
\( D_{\mathrm {v}} \) Vacancy Diffusion Coefficient
\( E \) Electric Field
\( e \) Unit Charge
\( E_{a} \) Activation Energy
\( F \) Mechanical Force
\( f \) Relaxation Factor
\( j \) Current Density
\( J_{\mathrm {a}} \) Atom Flux
\( J_{\mathrm {v}} \) Vacancy Flux
\( k_{\mathrm {B}} \) Boltzmann Constant
\( Q^{*} \) Heat of Transport
\( \dot {q} \) Joule Heat Generated per Time
\( R_{\mathrm {p}} \) Flaw Radius
\( T \) Temperature
\( T_{\mathrm {r}\mathrm {e}\mathrm {f}} \) Reference Temperature
\( \mathrm {u} \) Displacement Field
\( V \) Volume
\( W \) Elastic Strain Energy
\( Z^{*} \) Effective Valence
C Elastic Tensor
\( \delta   \) Grain Boundary Width
\( \delta _{i,j} \) Kronecker Delta
\( \epsilon   \) Mechanical Strain
\( \epsilon _{\mathrm {p}\mathrm {f}} \) Phase Field Interface Thickness Parameter
\( \epsilon _{\mathrm {T}} \) Temperature Induced Mechanical Strain
\( \epsilon _{\mathrm {v}} \) Vacancy Related Mechanical Strain
\( \phi _{\mathrm {E}} \) Electric Potential
\( \gamma _{\mathrm {S}} \) Surface Energy
\( \kappa   \) Surface Curvature
\( \lambda   \) Lamè Parameter
\( \lambda _{\mathrm {T}} \) Thermal Conductivity
\( \mu   \) Chemical Potential
\( \rho   \) Specific Electric Resistance
\( \rho _{\mathrm {M}} \) Material Density
\( \sigma   \) Isotropic Stress
\( \sigma _{\mathrm {E}} \) Electric Conductivity
\( \sigma _{\mathrm {t}\mathrm {h}} \) Threshold Stress for Void Nucleation
\( \tau   \) Characteristic Relaxation Time
\( \Omega   \) Atomic Volume

List of Figures

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