Staff Person Publications
  •  Intranet
t3kitt3kitt3kit
  • Home
  • TeachingOpen
    • Lehrveranstaltungen
    • Bachelorarbeiten
    • Masterarbeiten
    • Dissertationen
  • ResearchOpen
    • Activities
    • Computing Infrastructure
    • Characterization Lab
    • Annual Reviews
    • Public Projects
    • Conferences
  • PublicationsOpen
    • Books and Book Editorships
    • Papers in Journals
    • Contributions to Books
    • Conference Presentations
    • Scientific Reports
    • Patents
    • Habilitation Theses
    • PhD Theses
    • Master's Theses
  • SoftwareOpen
    • Software
    • Download
    • License Agreement
  • StaffOpen
    • Active Staff
    • Former Staff
  • About UsOpen
    • Contact Us
    • Join Us
    • Partners
    • Imprint
    • Corporate Design
    • Sitemap
  • News

Publications Dimitry Osintsev

97 records


Publications in Scientific Journals

12. J. Ghosh, D. Osintsev, V. Sverdlov:
"Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm";
Journal of Computational Electronics, 18, (2019), 28 - 36 doi:10.1007/s10825-018-1274-x. BibTeX
11. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34. BibTeX
10. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072. BibTeX
9. D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007. BibTeX
8. M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575. BibTeX
7. D. Osintsev, V. Sverdlov, S. Selberherr:
"Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29. BibTeX
6. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055. BibTeX
5. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors";
Sains Malaysiana, 42, (2013), 205 - 211. BibTeX
4. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate";
Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030. BibTeX
3. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling";
IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565. BibTeX
2. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels";
Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015. BibTeX
1. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer";
Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376. BibTeX

Contributions to Books

12. J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
"Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
in "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE Xplore, 2018, ISBN: 978-1-5386-4812-4, 205 - 208 doi:10.1109/ULIS.2018.8354770. BibTeX
11. D. Osintsev, V. Sverdlov, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films";
in "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22, G. Russo, V. Capasso, G. Nicosia, V. Romano (ed); Springer International Publishing, (invited) 2016, ISBN: 978-3-319-23412-0, 695 - 700 doi:10.1007/978-3-319-23413-7_96. BibTeX
10. V. Sverdlov, D. Osintsev, S. Selberherr:
"Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
in "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed); De Gruyter, (invited) 2016, ISBN: 978-1-5015-1050-2, 29 - 48 doi:10.1515/9781501501531-003. BibTeX
9. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
in "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", issued by The Electrochemical Society; Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); ECS Transactions, 2015, ISBN: 978-1-62332-238-0, 233 - 240 doi:10.1149/06605.0233ecst. BibTeX
8. J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
"Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
in "Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 285 - 292 doi:10.1007/978-3-319-26520-9_31. BibTeX
7. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865824. BibTeX
6. D. Osintsev, V. Sverdlov, S. Selberherr:
"Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
in "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed); Springer International Publishing, Switzerland, 2014, ISBN: 978-3-319-08803-7, 127 - 149 doi:10.1007/978-3-319-08804-4_7. BibTeX
5. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
in "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198. BibTeX
4. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films";
in "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", issued by The Electrochemical Society; Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed); ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208 doi:10.1149/05305.0203ecst. BibTeX
3. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs";
in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242850. BibTeX
2. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins";
in "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2012, ISBN: 978-3-642-29842-4, 630 - 637 doi:10.1007/978-3-642-29843-1_72. BibTeX
1. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
in "Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Vol.35, No.5", issued by The Electrochemical Society; Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (ed); ECS Transactions, 2011, ISBN: 978-1-56677-866-4, 277 - 282 doi:10.1149/1.3570806. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

70. J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
"Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 79 - 80. BibTeX
69. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
Talk: European Materials Research Society (EMRS), Warsaw, Poland; 2015-09-15 - 2015-09-18; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 page(s) . BibTeX
68. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 277 - 280 doi:10.1109/SISPAD.2015.7292313. BibTeX
67. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 35 - 36. BibTeX
66. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 2015-06-29 - 2015-07-02; in "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2, 235 - 236. BibTeX
65. V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
"Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63. BibTeX
64. D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin Lifetime in MOSFETs: A High Performance Computing Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61. BibTeX
63. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), Vol.67, ISSN: 1938-6737, 2 page(s) . BibTeX
62. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 2015-05-20 - 2015-05-22; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), ISBN: 978-1-927500-70-5, 58. BibTeX
61. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), Vol.60/1, . BibTeX
60. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 285 - 288 doi:10.1109/ULIS.2015.7063829. BibTeX
59. V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
"Modeling Silicon Spintronics";
Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 2014-09-23 - 2014-09-25; in "Abstracts 2014", (2014), 78. BibTeX
58. V. Sverdlov, D. Osintsev, S. Selberherr:
"Spin behaviour in strained silicon films";
Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 2014-09-15 - 2014-09-18; in "Abstracts of E-MRS Fall Meeting", (2014), 1 page(s) . BibTeX
57. D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
"Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 193 - 196 doi:10.1109/SISPAD.2014.6931596. BibTeX
56. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570. BibTeX
55. D. Osintsev, V. Sverdlov, S. Selberherr:
"Valley degeneracy and spin lifetime enhancement in stressed silicon films";
Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 2014-07-28 - 2014-07-31; in "Book of Abstracts", (2014), 1. BibTeX
54. V. Sverdlov, D. Osintsev, S. Selberherr:
"Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach";
Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456. BibTeX
53. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 59 - 60. BibTeX
52. T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194. BibTeX
51. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8. BibTeX
50. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 2014-05-12 - 2014-05-14; in "Proceedings of the 29th International Conference on Microelectronics", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081. BibTeX
49. V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
"Modeling of Spin-Based Silicon Technology";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891. BibTeX
48. A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spin-Based Electronic Devices";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 1 page(s) . BibTeX
47. D. Osintsev, V. Sverdlov, S. Selberherr:
"Mobility and spin lifetime enhancement in thin silicon films by shear strain";
Talk: APS March Meeting, Denver, USA; 2014-03-03 - 2014-03-07; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), Vol.59/1, 1 page(s) . BibTeX
46. D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
"Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2014-02-23 - 2014-02-28; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89. BibTeX
45. D. Osintsev, V. Sverdlov, S. Selberherr:
"Increasing mobility and spin lifetime with shear strain in thin silicon films";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX
44. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement in Strained Thin Silicon Films";
Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 page(s) . BibTeX
43. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
"Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 98 - 101. BibTeX
42. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 2013-09-16 - 2013-09-20; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9, 334 - 337 doi:10.1109/ESSDERC.2013.6818886. BibTeX
41. S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
"Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441. BibTeX
40. D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 236 - 239 doi:10.1109/SISPAD.2013.6650618. BibTeX
39. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer";
Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 - 2013-09-04; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101. BibTeX
38. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272. BibTeX
37. D. Osintsev, V. Sverdlov, S. Selberherr:
"Calculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films";
Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 69 - 70. BibTeX
36. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of Surface Roughness Scattering on Spin Lifetime in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 76 - 77. BibTeX
35. V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr:
"Modeling Spin-Based Devices in Silicon";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71. BibTeX
34. T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239. BibTeX
33. D. Osintsev, V. Sverdlov, S. Selberherr:
"Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films";
Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 - 2013-05-16; in "223th ECS Meeting", (2013), Vol.894, ISBN: 978-1-56677-866-4, 1. BibTeX
32. D. Osintsev, V. Sverdlov, S. Selberherr:
"Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs";
Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 64 - 65. BibTeX
31. D. Osintsev, V. Sverdlov, S. Selberherr:
"Influence of the valley degeneracy on spin relaxation in thin silicon films";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 - 2013-03-21; in "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7, 221 - 224 doi:10.1109/ULIS.2013.6523525. BibTeX
30. D. Osintsev, V. Sverdlov, S. Selberherr:
"Enhanced intervalley splitting and reduced spin relaxation in strained thin silicon films";
Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) . BibTeX
29. D. Osintsev, V. Sverdlov, S. Selberherr:
"Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 - 2013-01-23; in "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2013), Vol.46, 1 page(s) . BibTeX
28. D. Osintsev, V. Sverdlov, S. Selberherr:
"Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films";
Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0, 33. BibTeX
27. T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Fully Electrically Read- Write Magneto Logic Gates";
Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in "Book of Abstracts", (2012), 1 page(s) . BibTeX
26. D. Osintsev, V. Sverdlov, S. Selberherr:
"Modeling Spintronic Effects in Silicon";
Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; (invited) 2012-09-24 - 2012-09-28; in "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 page(s) . BibTeX
25. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 2012-09-19 - 2012-09-21; in "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0, 156 - 162. BibTeX
24. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 153 - 156. BibTeX
23. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells";
Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-27. BibTeX
22. D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr:
"Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs";
Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 - 2012-08-03; in "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), Vol.1566, ISBN: 978-0-7354-1194-4, 1 page(s) doi:10.1063/1.4848413. BibTeX
21. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs";
Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3. BibTeX
20. D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
"Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain";
Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230. BibTeX
19. D. Osintsev, V. Sverdlov, S. Selberherr:
"Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body";
Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78. BibTeX
18. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
17. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
16. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX
15. D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov:
"An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation";
Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX
14. A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr:
"Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations";
Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181. BibTeX
13. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer";
Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) . BibTeX
12. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer";
Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444. BibTeX
11. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049. BibTeX
10. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189. BibTeX
9. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238. BibTeX
8. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs";
Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229. BibTeX
7. A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
"Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX
6. D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Ballistic Transport in Spin Field-Effect Transistors Built on Silicon";
Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX
5. D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
"Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64. BibTeX
4. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr:
"Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 2011-05-01 - 2011-05-06; in "Meeting Abstracts", (2011), Vol.MA2011-01(23): 1453, 1. BibTeX
3. D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr:
"Ballistic Spin Field Effect Transistor Based on Silicon Nanowires";
Talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 - 2011-03-25; in "Bulletin American Physical Society (APS March Meeting 2011)", (2011), . BibTeX
2. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Transport Properties of Spin Field-Effect Transistors Built on Si and InAs";
Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998. BibTeX
1. D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr:
"Ballistic Spin Field-Effect Transistors Built on Silicon Fins";
Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

2. J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization";
Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 2015-08-31 - 2015-09-01; . BibTeX
1. V. Sverdlov, D. Osintsev, S. Selberherr:
"From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; (invited) 2014-01-27 - 2014-01-29; . BibTeX

Doctor's Theses (authored and supervised)

1. D. Osintsev:
"Modeling Spintronic Effects in Silicon";
Reviewer: V. Sverdlov, D. Süss; E360, 2014, oral examination: 2014-05-28. BibTeX
  • Active Staff
  • Former Staff

Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
Contact Us    |    Join Us    |    Imprint
© E360 - Institute for Microelectronics 2018