Research Topic: Physics-based modeling of Random Telegraph Noise in scaled technologies
The subject of this PhD thesis is the in-depth investigation and characterization of random telegraph noise (RTN) in a high-performance analog silicon technology. Especially in scaled transistors, RTN can cause considerable fluctuations of the threshold voltage of MOS transistors and thus seriously limit the performance of analog circuit blocks. Therefore, understanding the physical origin of this effect and mitigating its impact on the device performance, e.g., by employing proper design techniques or improvements in the fabrication process, is a significant step in achieving the requirements of the next-generation products.
So far, considerable work has been performed in the scientific community to understand this effect. However, many details about the nature of the traps causing RTN are still open. For instance, models exist to explain the intricate bias and temperature dependence of the measured RTN signals. However, features like the volatile behavior of defects cannot be explained by state-of-the-art models.
This work shall be dedicated to a high-performance analog process technology in 110nm structure size. First, a review and adoption of existing models for RTN will be done, including our defect-centric model based on the non-radiative multi-phonon theory. The thesis will also include the electrical characterization and measurement of MOS transistors, such as drain current measurements in the time and frequency domain, single defect spectroscopy, and DLTS. One goal is to identify the energy levels and the nature of the trap sites in the silicon oxide. A further goal is to determine the distribution of the RTN- related threshold voltage shifts as a function of the gate voltage bias and the size of the MOS transistors. The Institute of Microelectronics at the TU Wien, Vienna, has a high international renowned research group, which will support the PhD thesis from a theoretical point of view. The thesis will be supervised by a technical fellow at ams-Osram AG and by an academic supervisor of TU Wien.
For this position, considerable interest and existing in-depth knowledge in one or more of the following areas are advantageous to complement our team:
Immediately. The position will remain open until filled.
This position is subject to the collective agreement of TU Wien for workers and employees, employment group B1. The monthly salary is paid 14 times and the gross annual salary is approximately EUR 41.601,00.
Please submit your application containing a detailed CV, your collective certificates, your Master’s thesis or PhD thesis (weblink or PDF), and a single-page motivation letter (discussing relevant previous experience related to the desired skills and experience) to email@example.com.
There is no particular deadline for applying, and it will be assigned on a first-come-first-serve basis.