Conference Presentations

2166.   Sokolovic, I., Rasouli, S., Wu, B., Sofer, Z., Matković, A., Schmid, M., Diebold, U., Grasser, T. (2024, March 19).
PtSe₂ vdW Single-Crystal Surfaces Studied at the Atomic Scale With ncAFM
87. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Germany. (reposiTUm)

2165.   Sokolovic, I., Guedes, E., van Waas, T., Poncé, S., Polley, C., Schmid, M., Diebold, U., Radović, M., Setvin, M., Dil, H. (2024, March 22).
Two-Dimensional Electron Liquids at Truly Bulk-Terminated SrTiO₃
87. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Germany. (reposiTUm)

2164.   Aguinsky, L., Toifl, A., Souza Berti Rodrigues, F., Hössinger, A., Weinbub, J. (2023).
A Modern Formulation of Knudsen Diffusion With Applications to Nanofabrication.
In 2023 IEEE 23rd International Conference on Nanotechnology (NANO) (pp. 270–275), Jeju City, Korea, Democratic People's Republic of. https://doi.org/10.1109/NANO58406.2023.10231251 (reposiTUm)

2163.   Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023).
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping.
In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2), Tarragona, Spain. (reposiTUm)

2162.   Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂.
In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm)

2161.   Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices.
In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (p. 1), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331859mtgabs (reposiTUm)

2160.   Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Back-Hopping in Ultra-Scaled MRAM Cells.
In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm)

2159.   Sverdlov, V., Selberherr, S. (2023).
Charge and Spin Transport in Semiconductor Devices.
In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4), Nanjing, China. https://doi.org/10.1109/ASICON58565.2023.10396645 (reposiTUm)

2158.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29).
Charged Instrinsic Defect States in Amorphous Si3N4
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

2157.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2023).
Coherent Wigner Dynamics of a Superposition State in a Tunable Barrier Quantum Dot.
In Book of Abstracts of the International Workshop on Computational Nanotechnology 2023 (IWCN) (pp. 90–91), Barcelona, Spain. (reposiTUm)

2156.   Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S. (2023).
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices.
In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Lisbon, Portugal. https://doi.org/10.1109/ESSDERC59256.2023.10268508 (reposiTUm)

2155.   Ballicchia, M., Etl, C., Nedjalkov, M., Weinbub, J. (2023).
Controlling Single Electrons by Non-Uniform Magnetic Fields.
In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 87–88), Kona, Hawaii, United States. (reposiTUm)

2154.   Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2023).
Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase.
In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (p. 116), Mauterndorf, Austria. (reposiTUm)

2153.   Kosina, H., Gull, J. (2023).
Effect of Electron-Electron Scattering on the Energy Distribution in Semiconductor Devices.
In Book of abstracts of the International Workshop on Computational Nanotechnology (IWCN) (pp. 62–63), Barcelona, Spain. (reposiTUm)

2152.   Reiter, T., Filipovic, L. (2023).
Fast 3D Flux Calculation Using Monte Carlo Ray Tracing on GPUs.
In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT '2023)) (pp. 67–72), Funchal, Portugal. https://doi.org/10.13140/RG.2.2.13265.71524 (reposiTUm)

2151.   Knobloch, T., Grasser, T. (2023).
Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials.
In ECS Meeting Abstracts (p. 1319), Boston, MA, United States. https://doi.org/10.1149/MA2023-01131319mtgabs (reposiTUm)

2150.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2023).
Gauge-Invariant Wigner Particle Model for Linear Electromagnetic Fields.
In Book of Abstracts: IWW International Wigner Workshop 2023 (pp. 3–5), Barcelona, Spain. (reposiTUm)

2149.   Knobloch, T., Selberherr, S., Grasser, T. (2023).
High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits.
In ECS Meeting Abstracts (p. 1864), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331864mtgabs (reposiTUm)

2148.   Pruckner, B., Fiorentini, S., Goes, W., Sverdlov, V. (2023).
Impact of Spin-Flip Length in dsMTJ Spacer Layers on Switching Performance.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

2147.   Saleh, A., Zahedmanesh, H., Ceric, H., De Wolf, I., Croes, K. (2023).
Impact of via Geometry and Line Extension on Via-Electromigration in Nano-Interconnects.
In 2023 IEEE International Reliability Physics Symposium (IRPS) Proceedings, Monterey, United States. https://doi.org/10.1109/IRPS48203.2023.10118027 (reposiTUm)

2146.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30).
Intrinsic Charge Trapping Sites in Amorphous Si₃N₄
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

2145.   Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H).
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm)

2144.   Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Micromagnetic Modeling of SOT-MRAM Dynamics.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

2143.   Sverdlov, V., Jorstad, N., Bendra, M., Hadamek, T., Goes, W. (2023).
Modeling Emerging Spintronic Devices and Spintronic THz Emitters.
In Book of abstracts of the International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023) (pp. 50–51), Aizu-Wakamatsu, Japan. (reposiTUm)

2142.   Reiter, T., Toifl, A., Hössinger, A., Filipovic, L. (2023).
Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures.
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 85–88), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319506 (reposiTUm)

2141.   Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., Selberherr, S. (2023).
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory.
In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023) (pp. 28–30), Funchal (Madeira Island), Portugal. (reposiTUm)

2140.   Leroch, S., Stella, R., Hössinger, A., Filipovic, L. (2023).
Molecular Dynamics Study of Al Implantation in 4h-SiC.
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 185–188), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319554 (reposiTUm)

2139.   Gull, J., Kosina, H. (2023).
Monte-Carlo Investigation of Energy Distributions in FET Channels.
In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) : Programme, Tarragona, Spain. (reposiTUm)

2138.   Sverdlov, V., Bendra, M., Jorstad, N., Pruckner, B., Hadamek, T., Goes, W., Selberherr, S. (2023).
Multi-Bit Operation in an MRAM Cell With a Composite Free Layer.
In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 143–144), Kona, Hawaii, United States. (reposiTUm)

2137.   Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., Selberherr, S. (2023).
Multi-Level Operation in Ultra-Scaled MRAM.
In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings, Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 (reposiTUm)

2136.   Jorstad, N., Hadamek, T., Bendra, M., Ender, J., Pruckner, B., Goes, W., Sverdlov, V. (2023).
Numerical Simulations of Spintronic Magnetoresistive Memories.
In SURGE Virtual Event North America 2023: Agenda (p. 1), Santa Clara, CA, United States. (reposiTUm)

2135.   Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Numerical Study of Two-Terminal SOT-MRAM.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

2134.   Cervenka, J., Kosik, R., Senra Ribeiro, F. (2023).
Parallel Solution of the Schrödinger-Poisson Equation on GPUs.
In 14th International Conference on Large-Scale Scientific Computations (LSSC '23): Scientific Program: Abstracts: List of Participants (pp. 34–35), Sozopol, Bulgaria. (reposiTUm)

2133.   Filipovic, L., Bobinac, J., Piso, J., Reiter, T. (2023).
Physics-Informed Compact Model for SF6/O2 Plasma Etching.
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 73–76), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319479 (reposiTUm)

2132.   Filipovic, L., Reiter, T., Klemenschits, X., Leroch, S., Stella, R., Baumgartner, O., Hössinger, A. (2023).
Process Simulation in Micro- And Nano-Electronics.
In Book of abstracts of the International Workshop on Computational Nanotechnology 2023 (pp. 38–39), Barcelona, Spain. (reposiTUm)

2131.   Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

2130.   Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319650 (reposiTUm)

2129.   Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N., Hadamek, T., Ender, J., Lacerda de Orio, R., Gös, W. (2023).
Spin and Charge Transport in Ultra-Scaled MRAM Cells.
In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (p. 55), Moscow-Zvenigorod, Russian Federation. https://doi.org/10.29003/m3563.ICMNE-2023 (reposiTUm)

2128.   Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Study of Self-Heating and Its Effects in SOT-STT-MRAM.
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319549 (reposiTUm)

2127.   Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Switching Composite Free Layers in Ultra-Scaled MRAM Cells.
In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm)

2126.   Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023).
Switching Performance of Mo-Based pMTJ and dsMTJ Structures.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm)

2125.   Achleitner, F., Arnold, A., Carlen, E., Jüngel, A., Mehrmann, V. (2023, September 18).
The Hypocoercivity Index for the Short Time Behavior of Linear Time-Invariant ODE Systems
ÖMG Tagung 2023 Meeting of the Austrian Mathematical Society, Karl-Franzens-University (KFU), Graz, Austria. (reposiTUm)

2124.   Ender, J., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023).
Towards Efficient SOT-assisted STT-MRAM Cell Switching Using Reinforcement Learning.
In 14th International Conference, Large-Scale Scientific Computations LSSC'23 : Scientific Program, Abstracts, List of Participants (p. 39), Sozopol, Bulgaria. (reposiTUm)

2123.   Bendra, M., Jorstad, N., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics.
In IEDM 2023 Special MRAM poster session, San Francisco, United States. (reposiTUm)

2122.   Weinbub, J., Ballicchia, M., Etl, C., Nedjalkov, M. (2023, March 6).
Wigner Signed Particles for Electron Quantum Optics
Mini Workshop “QuantMOCOTE - Modelling, Optimization and Control of Quantum systems in Technology and Education,” Würzburg, Germany. (reposiTUm)

2121.   Ballicchia, M., Etl, C., Nedjalkov, M., Weinbub, J. (2023).
Wigner Transport in Magnetic Fields.
In Book of abstracts of the International Workshop on Computational Nanotechnology 2023 (pp. 119–120), Barcelona, Spain. (reposiTUm)

2120.   Rodrigues, F., Aguinsky, L., Hössinger, A., Weinbub, J. (2022).
3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 32–33), Granada, Spain. (reposiTUm)

2119.   Filipovic, L. (2022).
A Broadly-Applicable Ensemble Monte Carlo Framework.
Workshop Monte Carlo Simulation: Beyond Moore’s Law, 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain. (reposiTUm)

2118.   Cvitkovich, L., Waldhör, D., El-Sayed, A., Jech, M., Wilhelmer, C., Grasser, T. (2022).
Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation.
In PSI-K 2022: abstracts book (p. 209), Lausanne, Switzerland. (reposiTUm)

2117.   Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab-Initio Study of Multi-State Defects in Amorphous SiO2.
In PSI-K 2022: abstracts book (p. 264), Lausanne, Switzerland. (reposiTUm)

2116.   Selberherr, S., Sverdlov, V. (2022).
About Electron Transport and Spin Control in Semiconductor Devices.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, Granada, Spain. (reposiTUm)

2115.   Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., Sverdlov, V. (2022).
About the Switching Energy of a Magnetic Tunnel Junction Determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy.
In 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico, Mexico. https://doi.org/10.1109/laedc54796.2022.9908222 (reposiTUm)

2114.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Devices for Digital Spintronics.
In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm)

2113.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Magneto-Resistive Memory.
In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm)

2112.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches.
In Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, Zvenigorod, Russian Federation. https://doi.org/10.1117/12.2624595 (reposiTUm)

2111.   Lenz, C., Manstetten, P., Hössinger, A., Weinbub, J. (2022).
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 117–118), Granada, Spain. (reposiTUm)

2110.   Milardovich, D., Waldhoer, D., Jech, M., El-Sayed, A., Grasser, T. (2022).
Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 61–62), Granada, Spain. (reposiTUm)

2109.   Illarionov, Y., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T. (2022).
CVD-GFETs With Record-Small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators.
In Proceedings of the Device Research Conference (DRC) (pp. 121–122), Santa-Barbara, CA, United States. (reposiTUm)

2108.   Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 11–12), Granada, Spain. (reposiTUm)

2107.   Filipovic, L., Baumgartner, O., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M. (2022).
DTCO Flow for Air Spacer Generation and Its Impact on Power and Performance at N7.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 34–35), Granada, Spain. (reposiTUm)

2106.   Fiorentini, S., Loch, W., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Design Analysis of Ultra-Scaled MRAM Cells.
In Proceedings of 2022 IEEE 16th International Conference on Solid-State, Integrated Circuit Technology (ICSICT), Nanjing, China, China. (reposiTUm)

2105.   Saleh, A., Zahedmanesh, H., Ceric, H., Croes, K., De Wolf, I. (2022).
Dynamics of Electromigration Voids in Cu Interconnects: Investigation Using a Physics-Based Model Augmented by Neural Networks.
In 2022 IEEE International Interconnect Technology Conference (IITC), San Jose, USA, United States. https://doi.org/10.1109/iitc52079.2022.9881303 (reposiTUm)

2104.   Sverdlov, V., Seiler, H., El-Sayed, A., Illarionov, Y., Kosina, H., Selberherr, S. (2022).
Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T.
In International Conference on Physics and its Application 2022 (pp. 36–37), San Francisco, United States. (reposiTUm)

2103.   Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2022).
Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase.
In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 48–49), Lihue, HI, United States. (reposiTUm)

2102.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2022).
Electromagnetic Control of Electron Interference.
In Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches (p. 15), Zurich, Switzerland. (reposiTUm)

2101.   Ceric, H., de Orio, R., Selberherr, S. (2022).
Electromigration Degradation of Gold Interconnects: A Statistical Study.
In 2022 IEEE International Interconnect Technology Conference (IITC), San Jose, USA, United States. https://doi.org/10.1109/iitc52079.2022.9881313 (reposiTUm)

2100.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Emerging Devices for Digital Spintronics.
In 2nd Global Conference, Expo on Nanotechnology, Nanoscience (pp. 32–33), online, unknown. (reposiTUm)

2099.   Knobloch, T. (2022).
Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling.
Workshop Monte Carlo Simulation: Beyond Moore’s Law, 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain. (reposiTUm)

2098.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning.
In Abstracts of Graphene Week 2022, Munich, Germany. (reposiTUm)

2097.   Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022, September 12).
Epitaxial Growth of Crystalline CaF2 on Silicene by Molecular Beam Epitaxy
19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria. (reposiTUm)

2096.   Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves.
In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm)

2095.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Finding Suitable Gate Insulators for Reliable 2D FETs.
In 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, United States. https://doi.org/10.1109/irps48227.2022.9764499 (reposiTUm)

2094.   Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm)

2093.   Illarionov, Y., Knobloch, T., Uzlu, B., Sokolov, N. S., Lemme, M. C., Grasser, T. (2022).
Highly Stable GFETs With 2nm Crystalline CaF2 Insulators.
6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia. (reposiTUm)

2092.   Ceric, H., Orio, R., Selberherr, S. (2022).
Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 301–303), Milan, Italy. (reposiTUm)

2091.   Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L. (2022).
Impact of Mask Tapering on SF6/O2 Plasma Etching.
In Microelectronic Devices and Technologies: Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT '2022) (pp. 90–94), Corfu, Greece. (reposiTUm)

2090.   Tselios, K., Knobloch, T., Michl, J., Waldhör, D., Schleich, C., Ioannidis , E., Enichlmair , H., Minixhofer , R., Grasser, T., Waltl, M. (2022).
Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors.
In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), Fallen Leaf Lake, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032748 (reposiTUm)

2089.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Interface Effects in Ultra-Scaled MRAM Cells.
In Letters from the 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2022 (p. 108373), Udine, Italy. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

2088.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2022).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In PSI-K 2022 Abstracts Book, Lausanne, Switzerland. (reposiTUm)

2087.   Ceric, H., de Orio, R., Selberherr, S. (2022).
Microstructural Impact on Electromigration Reliability of Gold Interconnects.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 178–179), Granada, Spain. (reposiTUm)

2086.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S. (2022).
Modeling Advanced Magnetoresistive Memory: A Journey From Finite Element Methods to Machine Learning Approaches.
In 2nd Global Webinar on Nanoscience, Nanotechnology, online, unknown. (reposiTUm)

2085.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Modeling Advanced Spintronic Based Magnetoresistive Memory.
In International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia, Armenia. (reposiTUm)

2084.   Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S. (2022).
Modeling Approach to Ultra-Scaled MRAM Cells.
In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8), Taastrup, Copenhagen, Denmark. (reposiTUm)

2083.   Jørstad, N., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Modeling Interfacial and Bulk Spin-Orbit Torques.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

2082.   Aguinsky, L., Rodrigues, F., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J. (2022).
Modeling Non-Ideal Conformality During Atomic Layer Deposition in High Aspect Ratio Structures.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022) (pp. 40–41), Granada, Spain. (reposiTUm)

2081.   Reiter, T., Klemenschits, X., Filipovic, L. (2022).
Modeling Plasma-Induced Damage During the Dry Etching of Silicon.
In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032764 (reposiTUm)

2080.   Hadámek, T., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Modeling Thermal Effects in STT-MRAM.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 132–133), Granada, Spain. (reposiTUm)

2079.   Sverdlov, V. (2022).
Modeling Ultra-Scaled Magnetoresistive Memory Cells.
In 3rd Global Webinar on Nanoscience, Nanotechnology, online, unknown. (reposiTUm)

2078.   Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach.
In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm)

2077.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2022).
Monte Carlo Approach for Solving Integral Equations: From Classical-Boltzmann to Quantum-Wigner Particles.
Workshop Monte Carlo Simulation: Beyond Moore’s Law, 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain. (reposiTUm)

2076.   Kosina, H. (2022, October 13).
Numerische Modellierung Der Beweglichkeit in Verspanntem Silizium
CiS MEMS Workshop, Erfurt, Germany. (reposiTUm)

2075.   Kosina, H. (2022).
Particle Models for Electron-Electron Scattering.
In Book of Abstracts Quantum Transport Methods and Algorithms: From Particles to Waves Approaches (p. 10), Zurich, Switzerland. (reposiTUm)

2074.   Weinbub, J., Ballicchia, M., Nedjalkov, M. (2022).
Quantum Transport in Phase Space: Introduction and Applications.
Summer School on Methods and Models of Kinetic Theory, Pesaro, Italy. (reposiTUm)

2073.   Kosina, H. (2022).
Recent Developments in Semiclassical Transport: Backward Monte Carlo and Electron-Electron Scattering.
Workshop Monte Carlo Simulation: Beyond Moore’s Law, 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain. (reposiTUm)

2072.   Filipovic, L. (2022).
Reliability of Platinum Microheater Geometries for MEMS-Based Gas Sensors.
In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032744 (reposiTUm)

2071.   Knobloch, T., Grasser, T. (2022).
Scalable and Reliable Gate Insulators for 2D Material-Based FETs.
IEEE Latin America Electron Devices Conference (LAEDC 2022), Puebla, Mexico. (reposiTUm)

2070.   Quell, M., Hössinger, A., Weinbub, J. (2022).
Shared-Memory Fast Marching Method for Re-Distancing on Hierarchical Meshes.
In Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC) (p. 1), Maribor, Slovenia. https://doi.org/10.25365/phaidra.337 (reposiTUm)

2069.   Loch, W., Selberherr, S., Sverdlov, V. (2022).
Simulation of Novel MRAM Devices With Enhanced Performance.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

2068.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Spin Torques in ULTRA-Scaled MRAM Devices.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351), Milan, Italy. (reposiTUm)

2067.   Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach.
In The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II (pp. 40–44), online, unknown. (reposiTUm)

2066.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torques in Ultra-Scaled MRAM Cells.
In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO) (pp. 129–132), Opatija, Croatia. (reposiTUm)

2065.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2022).
Statistical Study of Electromigration in Gold Interconnects.
In 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 1–5), Singapore, Singapore. https://doi.org/10.1109/IPFA55383.2022.9915762 (reposiTUm)

2064.   Gollner, L., Steiner, R., Filipovic, L. (2022).
Study of Phonon-Limited Electron Transport in Monolayer MoS2.
In Microelectronic Devices and Technologies Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT 2022) (pp. 74–78), Corfu, Greece. (reposiTUm)

2063.   Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

2062.   Jech, M., Grasser, T., Waltl, M. (2022).
The Importance of Secondary Generated Carriers in Modeling of Full Bias Space.
In 2022 6th IEEE Electron Devices Technology, Manufacturing Conference (EDTM), Japan. https://doi.org/10.1109/edtm53872.2022.9798262 (reposiTUm)

2061.   Illarionov, Y., Knobloch, T., Waltl, M., Smets, Q., Panarella, L., Kaczer, B., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T. (2022).
Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs.
Graphne 2022, Aachen, Germany. (reposiTUm)

2060.   Giparakis, M., Knötig, H. M., Detz, H., Beiser, M., Schrenk, W., Schwarz, B., Strasser, G., Andrews, A. M. (2022, May 19).
Top-Side Illuminated InAs/AlAsSb Quantum Cascade Detector at 2.7 µm
CLEO: Science and Innovations 2022, San Jose, United States of America (the). (reposiTUm)

2059.   Filipovic, L. (2022, September 5).
ViennaEMC: A Broadly-Applicable Ensemble Monte Carlo Framework
Workshop WS1 - Monte Carlo Simulation: Beyond Moore’s LAW 2022, Granada, Spain. (reposiTUm)

2058.   Stephanie, M., Waltl, M., Grasser, T., Schrenk, B. (2022).
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM.
In Optical Fiber Communication Conference (OFC) 2022, San Diego, California, United States. https://doi.org/10.1364/ofc.2022.m1g.2 (reposiTUm)

2057.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2022).
Wigner Dynamics of Electron Quantum Superposition States in a Confined and Opened Quantum Dot.
In 2022 IEEE 22nd International Conference on Nanotechnology (NANO), Palma de Mallorca, Spain. https://doi.org/10.1109/nano54668.2022.9928753 (reposiTUm)

2056.   Weinbub, J. (2022).
Wigner Signed Particles for Electron Quantum Optics.
UW-Madison’s Grainger Institute Computing in Engineering Forum, USA, United States of America (the). (reposiTUm)

2055.   Weinbub, J. (2022).
Wigner Signed-Particles: Computational Challenges and Simulation Opportunities.
In Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches (p. 1), Zurich, Switzerland. (reposiTUm)

2054.   El-Sayed, A., Seiler, H., Kosina, H., Selberherr, S., Sverdlov, V. (2021).
Ab-Initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons.
In WINDS Book of Abstracts (pp. 79–80), Kona, United States. (reposiTUm)

2053.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches.
In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russian Federation. (reposiTUm)

2052.   Ender, J., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 45–46). (reposiTUm)

2051.   Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 49–50). (reposiTUm)

2050.   Franco, J., Marneffe, J., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B. (2021).
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 With Excellent pMOS NBTI Reliability Compatible With 3D Sequential Tier Stacking.
In 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, United States. https://doi.org/10.1109/iedm13553.2020.9372054 (reposiTUm)

2049.   Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2021).
Ballistic Conductance, K. P Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition, Grenoble, France. (reposiTUm)

2048.   Grasser, T., O'Sullivan, B., Kaczer, B., Franco, J., Stampfer, B., Waltl, M. (2021).
CV Stretch-Out Correction After Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
In 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, United States. https://doi.org/10.1109/irps46558.2021.9405184 (reposiTUm)

2047.   Klemenschits, X., Selberherr, S., Filipovic, L. (2021).
Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592605 (reposiTUm)

2046.   Sverdlov, V., Seiler, H., El-Sayed, A., Kosina, H. (2021).
Conductance Due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/eurosoi-ulis53016.2021.9560173 (reposiTUm)

2045.   Illarionov, Y., Knobloch, T., Grasser, T. (2021).
Crystalline Insulators for Scalable 2D Nanoelectronics.
INFOS 2021, Rende, Italy. (reposiTUm)

2044.   Lenz, C., Toifl, A., Hössinger, A., Weinbub, J. (2021).
Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560690 (reposiTUm)

2043.  C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
"Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations";
Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 109 - 110.

2042.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Design Support for Ultra-Scaled MRAM Cells.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM. 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, United States of America (the). (reposiTUm)

2041.   Naz, S., Shah, A., Ahmed, S., Patrick, G., Waltl, M. (2021).
Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum Dot Cellular Automata.
In 2021 IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual). https://doi.org/10.1109/ets50041.2021.9465459 (reposiTUm)

2040.   Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration.
In Proceedings of the Trends in Magnetism Conference (TMAG), Cefalù, Italy. (reposiTUm)

2039.   Jørstad, N., Fiorentini, S., Goes, W., Sverdlov, V. (2021).
Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM.
In Proceedings of the 14th International MOS-AK Workshop (p. 1), Silicon Valley, USA, United States. (reposiTUm)

2038.   Weinbub, J., Ballicchia, M., Nedjalkov, M., Selberherr, S. (2021).
Electromagnetic Coherent Electron Control.
In 2021 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica. https://doi.org/10.1109/laedc51812.2021.9437949 (reposiTUm)

2037.   Weinbub, J., Ballicchia, M., Nedjalkov, M. (2021).
Electron Quantum Optics for Quantum Interference Logic Devices.
In WINDS Book of Abstracts (pp. 58–59), Waikoloa Beach, United States. (reposiTUm)

2036.   Ender, J., Orio, R., Sverdlov, V. (2021).
Enhancing SOT-MRAM Switching Using Machine Learning.
In Proceedings of the Silvaco Users Global Event (SURGE) (p. 1), Santa Clara, CA, United States. (reposiTUm)

2035.   Illarionov, Y., Banshchikov, A. G., Sokolov, N. S., Fedorov, V. V., Suturin, S. M., Vexler, M. I., Knobloch, T., Polyushkin, D. K., Mueller, T., Grasser, T. (2021).
Epitaxial Fluorides as a Universal Platform for More Moore and More Than Moore Electronics Based on 2D Materials.
Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russian Federation (the). (reposiTUm)

2034.   Lenz, C., Scharinger, A., Quell, M., Manstetten, P., Hössinger, A., Weinbub, J. (2021).
Evaluating Parallel Feature Detection Methods for Implicit Surfaces.
In Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC) (p. 31), Maribor, Slovenia. (reposiTUm)

2033.   Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm)

2032.   Filipovic, L., Klemenschits, X. (2021).
Fast Model for Deposition in Trenches Using Geometric Advection.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592595 (reposiTUm)

2031.   Rodrigues, F., Aguinsky, L., Toifl, A., Hössinger, A., Weinbub, J. (2021).
Feature Scale Modeling of Fluorocarbon Plasma Etching for via Structures Including Faceting Phenomena.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 101–102). (reposiTUm)

2030.   Aguinsky, L., Wachter, G., Scharinger, A., Rodrigues, F., Toifl, A., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2021).
Feature-Scale Modeling of Low-Bias SF₆ Plasma Etching of Si.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) (pp. 1–4), Caen, France. https://doi.org/10.1109/eurosoi-ulis53016.2021.9560685 (reposiTUm)

2029.   Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Finite Element Method Approach to MRAM Modeling.
In 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia. https://doi.org/10.23919/mipro52101.2021.9597194 (reposiTUm)

2028.   El-Sayed, A., Seiler, H., Kosina, H., Sverdlov, V. (2021).
First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons.
In Book of Abstracts of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 113–114), Caen, France. (reposiTUm)

2027.   El-Sayed, A., Seiler, H., Kosina, H., Jech, M., Waldhör, D., Sverdlov, V. (2021).
First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons With Realistic Terminations.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560183 (reposiTUm)

2026.   Filipovic, L., Selberherr, S. (2021).
Gas Sensing With Two-Dimensional Materials Beyond Graphene.
In 2021 IEEE 32nd International Conference on Microelectronics (MIEL), Nis, Serbia. https://doi.org/10.1109/miel52794.2021.9569088 (reposiTUm)

2025.   Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Heating Asymmetry in Magnetoresistive Random Access Memories.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 63–66), unknown. (reposiTUm)

2024.   Waltl, M. (2021).
Impact of Defects in Semiconductor Transistors on Devices and Circuits.
In Proceedings of the International Meet on Nanotechnology (NANOMEET) (p. 93), Porto, Portugal. (reposiTUm)

2023.   Reiter, T., Klemenschits, X., Filipovic, L. (2021).
Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/eurosoi-ulis53016.2021.9560693 (reposiTUm)

2022.   Kampl, M., Kosina, H., Waltl, M. (2021).
Improved Sampling Algorithms for Monte Carlo Device Simulation.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 53–54). (reposiTUm)

2021.   Franco, J., Marneffe, J., Vandooren, A., Arimura, H., Ragnarsson, L., Claes, D., Litta, E., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B. (2021).
Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling Across SiO2 IL Thicknesses From 1.8 to 0.6 Nm for I/O and Core Logic.
In 2021 Symposium on VLSI Technology (VLSIT) (pp. 1–2), Kyoto, Japan. (reposiTUm)

2020.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2021).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631837 (reposiTUm)

2019.   Ballicchia, M., Benam, M., Nedjalkov, M., Selberherr, S., Weinbub, J. (2021).
Modeling Coulomb Interaction With a 'Wigner-Poisson' Coupling Scheme.
In International Wigner Workshop IWW 2021 Book of Abstracts (pp. 64–65), Austria. (reposiTUm)

2018.   Filipovic, L. (2021).
Modeling and Simulation of Atomic Layer Deposition.
In Proceedings of the EFDS Workshop on Simulation for ALD 2021 (p. 9), virtual. (reposiTUm)

2017.   Weinbub, J. (2021).
Modeling and Simulation of Two-Dimensional Single-Electron Control.
In Proceedings of the International Meet on Nanotechnology (NANOMEET 2021), Porto, Portugal. (reposiTUm)

2016.   Weinbub, J. (2021).
Modeling and Simulation of Two-Dimensional Single-Electron Dynamics.
In Proceedings of the Global Summit on Condensed Matter Physics (CONMAT), Valencia, Spain. (reposiTUm)

2015.   Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A., Wilhelmer, C., Grasser, T. (2021).
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631790 (reposiTUm)

2014.   Franco, J., Arimura, H., de Marneffe, J., Vandooren, A., Ragnarsson, L., Wu, Z., Claes, D., Litta, E., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B. (2021).
Novel Low Thermal Budget Gate Stack Solutions for BTI Reliability in Future Logic Device Technologies : Invited Paper.
In 2021 International Conference on IC Design and Technology (ICICDT), Dresde, Germany. https://doi.org/10.1109/icicdt51558.2021.9626482 (reposiTUm)

2013.   Kosina, H., Seiler, H., Sverdlov, V. (2021).
Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons.
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2012.   Kosik, R., Cervenka, J., Kosina, H. (2021).
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2000.   Rodrigues, F., Aguinsky, L., Toifl, A., Scharinger, A., Hössinger, A., Weinbub, J. (2021).
Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching.
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1999.   Hadamek, T., Bendra, M., Fiorentini, S., Ender, J., de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
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1998.   Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Gös, W., Selberherr, S., Sverdlov, V. (2021).
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1997.   Illarionov, Y., Knobloch, T., Grasser, T. (2020).
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1996.   Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B. (2020).
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1995.   Sverdlov, V., Selberherr, S. (2020).
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1994.   Lenz, C., Scharinger, A., Hössinger, A., Weinbub, J. (2020).
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1992.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
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1991.   Kosina, H., Seiler, H., Sverdlov, V. (2020).
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1990.   Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020).
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1989.   Ruch, B., Jech, M., Pobegen, G., Grasser, T. (2020).
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1988.   Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2020).
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1987.   Fiorentini, S., Ender, J., Selberherr, S., de Orio, R., Goes, W., Sverdlov, V. (2020).
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1986.   Fiorentini, S., Ender, J., Mohamedou, M., Selberherr, S., Orio, R., Goes, W., Sverdlov, V. (2020).
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1985.   Fiorentini, S., Ender, J., Mohamedou, M., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2020).
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1984.   Fiorentini, S., Ender, J., Mohamedou, M., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020).
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1983.   Illarionov, Y., Banshchikov, A., Knobloch, T., Polyushkin, D., Wachter, S., Fedorov, V., Suturin, S., Stöger-Pollach, M., Vexler, M., Sokolov, N., Grasser, T. (2020).
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1981.   Tselios, K., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Waltl, M. (2020).
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1978.   Sverdlov, V., Fiorentini, S., Ender, J., Goes, W., de Orio, R., Selberherr, S. (2020).
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1970.   Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., Grasser, T. (2020).
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1966.   Kruv, A., Kaczer, B., Grill, A., Gonzalez, M., Franco, J., Linten, D., Goes, W., Grasser, T., De Wolf, I. (2020).
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1965.   Fiorentini, S., de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020).
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1963.   Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M. (2020).
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1959.   Berens, J., Weger, M., Pobegen, G., Aichinger, T., Rescher, G., Schleich, C., Grasser, T. (2020).
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1958.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2020).
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1956.   Sverdlov, V., El-Sayed, A., Selberherr, S. (2020).
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Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T’ Phase: A K·p Study.
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1953.   Knobloch, T., Illarionov, Y., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T. (2020).
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1952.   Grasser, T., Kaczer, B., O'Sullivan, B., Rzepa, G., Stampfer, B., Waltl, M. (2020).
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1947.   Gnam, L., Manstetten, P., Quell, M., Rupp, K., Selberherr, S., Weinbub, J. (2019).
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1946.   Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D., Rupp, K. (2019).
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1945.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description.
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1941.   Wu, Z., Franco, J., Claes, D., Rzepa, G., Roussel, P., Collaert, N., Groeseneken, G., Linten, D., Grasser, T., Kaczer, B. (2019).
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Assessment of Electromigration in Nano‐Interconnects.
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CMOS Compatible Gas Sensors.
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1935.   Sverdlov, V., Selberherr, S. (2019).
CMOS Technology Compatible Magnetic Memories.
In 2019 8th International Symposium on Next Generation Electronics (ISNE), Taipei, Taiwan. https://doi.org/10.1109/isne.2019.8896421 (reposiTUm)

1934.   Filipovic, L., Selberherr, S. (2019).
CMOS-Compatible Gas Sensors.
In 2019 IEEE 31st International Conference on Microelectronics (MIEL), Beograd. https://doi.org/10.1109/miel.2019.8889585 (reposiTUm)

1933.   Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019).
CaF2 Insulators for Ultrascaled 2D Field Effect Transistors.
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1932.   Waltl, M. (2019).
Characterization and Modeling of Single Charge Trapping in MOS Transistors.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989880 (reposiTUm)

1931.   Sverdlov, V., Selberherr, S. (2019).
Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells.
In 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2019.8731330 (reposiTUm)

1930.   Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019).
Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells.
European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm)

1929.   Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019).
Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870359 (reposiTUm)

1928.   Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2019).
Comprehensive Modeling of Switching in Perpendicular STT-MRAM.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 107–108), Kona. (reposiTUm)

1927.   Weinbub, J., Nedjalkov, M. (2019).
Computational Strategies for Two-Dimensional Wigner Monte Carlo.
In Procedings of the High Performance Computing Conference (HPC) (pp. 55–56), Borovets, Bulgaria. (reposiTUm)

1926.   Kosina, H., Kampl, M. (2019).
Current Estimation in Backward Monte Carlo Simulations.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 129–130), Evanston, IL, United States. (reposiTUm)

1925.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2019).
Effects of Repulsive Dopants on Quantum Transport in a Nanowire.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 115–116), Evanston, IL, United States. (reposiTUm)

1924.   Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 152–153), Bologna, Italy. (reposiTUm)

1923.   de Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis45800.2019.9041920 (reposiTUm)

1922.   Filipovic, L., Orio, R. (2019).
Electromigration in Nano-Interconnects.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 2), Chicago, IL, USA. (reposiTUm)

1921.   Ballicchia, M., Nedjalkov, M., Weinbub, J. (2019).
Electron Evolution and Boundary Conditions in the Wigner Signed-Particle Approach.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 24–25), Waikoloa, Hawaii, USA. (reposiTUm)

1920.   Weinbub, J., Ballicchia, M., Ferry, D., Nedjalkov, M. (2019).
Electron Interference and Wigner Function Negativity in Dopant Potential Structures.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 14–15), Waikoloa, Hawaii, USA. (reposiTUm)

1919.   Weinbub, J., Ballicchia, M., Nedjalkov, M. (2019).
Electron Interference in Single- And Double-Dopant Potential Structures.
In Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC) (pp. 103–104), Sozopol, Bulgaria. (reposiTUm)

1918.   Illarionov, Y., Banshchikov, A., Vexler, M., Polyushkin, D., Wachter, S., Thesberg, M., Sokolov, N., Mueller, T., Grasser, T. (2019).
Epitaxial CaF2: A Route Towards Scalable 2D Electronics.
In Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4) (p. 69), Hangzhou, China. (reposiTUm)

1917.   Klemenschits, X., Selberherr, S., Filipovic, L. (2019).
Fast Volume Evaluation on Sparse Level Sets.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 113–114), Evanston, IL, United States. (reposiTUm)

1916.   Jech, M., Tyaginov, S., Kaczer, B., Franco, J., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2019).
First–Principles Parameter–Free Modeling of N– And P–FET Hot–Carrier Degradation.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993630 (reposiTUm)

1915.   Vandemaele, M., Kaczer, B., Tyaginov, S., Stanojevic, Z., Makarov, A., Chasin, A., Bury, E., Mertens, H., Linten, D., Groeseneken, G. (2019).
Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720406 (reposiTUm)

1914.   O'Sullivan, B., Ritzenthaler, R., Rzepa, G., Wu, Z., Litta, E., Richard, O., Conard, T., Machkaoutsan, V., Fazan, P., Kim, C., Franco, J., Kaczer, B., Grasser, T., Spessot, A., Linten, D., Horiguchi, N. (2019).
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720598 (reposiTUm)

1913.   Hössinger, A., Manstetten, P., Diamantopoulos, G., Quell, M., Weinbub, J. (2019).
High Performance Computing Aspects in Semiconductor Process Simulation.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (pp. 3–4), Chicago, IL, USA. (reposiTUm)

1912.   Manstetten, P., Diamantopoulos, G., Gnam, L., Aguinsky, L., Quell, M., Toifl, A., Scharinger, A., Hössinger, A., Ballicchia, M., Nedjalkov, M., Weinbub, J. (2019).
High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 13), Chicago, IL, USA. (reposiTUm)

1911.   Manstetten, P., Aguinsky, L., Selberherr, S., Weinbub, J. (2019).
High-Performance Ray Tracing for Nonimaging Applications.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 20), Chicago, IL, USA. (reposiTUm)

1910.   Sverdlov, V., Selberherr, S. (2019).
Hopping in a Multiple Ferromagnetic Terminal Configuration.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 75–77), Evanston, IL, United States. (reposiTUm)

1909.   Scharlotta, J., Bersuker, G., Tyaginov, S., Young, C., Haase, G., Rzepa, G., Waltl, M., Chohan, T., Iyer, S., Kotov, A., Zambelli, C., Guarin, F., Puglisi, F., Ostermaier, C. (2019).
IIRW 2019 Discussion Group II: Reliability for Aerospace Applications.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989910 (reposiTUm)

1908.   Ender, J., Orio, R., Fiorentini, S., Goes, W., Sverdlov, V. (2019).
Large-Scale Finite Element Micromagnetics Simulations Using Open Source Software.
European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm)

1907.   Ballicchia, M., Ferry, D., Nedjalkov, M., Weinbub, J. (2019).
Linking Wigner Function Negativity to Quantum Coherence in a Nanowire.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 59–60), Evanston, IL, United States. (reposiTUm)

1906.   Shah, A., Waltl, M. (2019).
Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits.
In 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Genova, Italy. https://doi.org/10.1109/icecs46596.2019.8964962 (reposiTUm)

1905.   Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Claes, D., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2019).
Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes.
In 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2019.8731237 (reposiTUm)

1904.   Sverdlov, V. (2019).
Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell.
LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France, EU. (reposiTUm)

1903.   Orio, R., Selberherr, S., Sverdlov, V. (2019).
Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques.
In Spintronics XII (pp. 110903F-1–110903F-6), San Diego, United States. https://doi.org/10.1117/12.2529119 (reposiTUm)

1902.   Waldhoer, D., Wimmer, Y., El-Sayed, A., Goes, W., Waltl, M., Grasser, T. (2019).
Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989889 (reposiTUm)

1901.   Filipovic, L. (2019).
Modeling and Simulation of Atomic Layer Deposition.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870462 (reposiTUm)

1900.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A., Grasser, T., Linten, D., Tyaginov, S. (2019).
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720584 (reposiTUm)

1899.   Toifl, A., Quell, M., Hössinger, A., Babayan, A., Selberherr, S., Weinbub, J. (2019).
Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870443 (reposiTUm)

1898.   Makarov, A., Roussel, P., Bury, E., Vandemaele, M., Spessot, A., Linten, D., Kaczer, B., Tyaginov, S. (2019).
On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989882 (reposiTUm)

1897.   Kosik, R., Thesberg, M., Weinbub, J., Kosina, H. (2019).
On the Consistency of the Stationary Wigner Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 30–31), Waikoloa, Hawaii, USA. (reposiTUm)

1896.   Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation.
In Procedings of the High Performance Computing Conference (HPC) (p. 45), Borovets, Bulgaria. (reposiTUm)

1895.   Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Construction of Extension Velocities for the Level-Set Method.
In Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM) (p. 42), Bialystok, Poland. (reposiTUm)

1894.   Quell, M., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870482 (reposiTUm)

1893.   Majumdar, S., Soikkeli, M., Kim, W., Illarionov, Y., Wachter, S., Polyushkin, D. K., Arpiainen, S., Prunnila, M. (2019).
Passivation Controlled Field Effect Mobility in 2D Semiconductor Based FET Devices for High Performance Logic Circuit Development on Flexible Platform.
Graphene Week, Delft, Netherlands, EU. (reposiTUm)

1892.   Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S., Grasser, T., Waltl, M. (2019).
Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993446 (reposiTUm)

1891.   Tyaginov, S., Chasin, A., Makarov, A., El-Sayed, A., Jech, M., De Keersgieter, A., Eneman, G., Vandemaele, M., Franco, J., Linten, D., Kaczer, B. (2019).
Physics-Based Modeling of Hot-Carrier Degradation in Ge NWFETs.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 565–566), Fukuoka, Japan. (reposiTUm)

1890.   Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D., Rupp, K. (2019).
Posedness of Stationary Wigner Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 32–33), Waikoloa, Hawaii, USA. (reposiTUm)

1889.   Ballicchia, M., Nedjalkov, M., Selberherr, S., Weinbub, J. (2019).
Potentials for Single Electron State Processing.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 111–112), Kona. (reposiTUm)

1888.   Klemenschits, X., Manstetten, P., Filipovic, L., Selberherr, S. (2019).
Process Simulation in the Browser: Porting ViennaTS Using WebAssembly.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870374 (reposiTUm)

1887.   Diamantopoulos, G., Manstetten, P., Gnam, L., Simonka, V., Aguinsky, L., Quell, M., Toifl, A., Hössinger, A., Weinbub, J. (2019).
Recent Advances in High Performance Process TCAD.
In CSE19 Abstracts (p. 335), Atlanta, GA, USA. (reposiTUm)

1886.   Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019).
Reliability and Thermal Stability of MoS2 FETs With Ultrathin CaF2 Insulator.
IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA, Non-EU. (reposiTUm)

1885.   Illarionov, Y., Grasser, T. (2019).
Reliability of 2D Field-Effect Transistors: From First Prototypes to Scalable Devices.
In 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa47161.2019.8984799 (reposiTUm)

1884.   Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 69–71), Evanston, IL, United States. (reposiTUm)

1883.   Orio, R., Selberherr, S., Ender, J., Fiorentini, S., Goes, W., Sverdlov, V. (2019).
Robustness of the Two-Pulse Switching Scheme for SOT-MRAM.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 54–55), Kona. (reposiTUm)

1882.   Sverdlov, V., Selberherr, S. (2019).
Shot Noise in Magnetic Tunnel Junctions.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II (pp. 19–22), Orlando, Florida, USA. (reposiTUm)

1881.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Simulation Study: The Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 609–610), Fukuoka, Japan. (reposiTUm)

1880.   Sverdlov, V., Selberherr, S. (2019).
Spin-Based CMOS-Compatible Memories.
In 2019 IEEE 9th International Nanoelectronics Conferences (INEC), Kuching, Malaysia. https://doi.org/10.1109/inec.2019.8853848 (reposiTUm)

1879.   Sverdlov, V. (2019).
Spin-Based Electronics: Recent Developments and Trends.
In Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN) (p. 7), Yaroslavl, Russia. (reposiTUm)

1878.   Sverdlov, V., Selberherr, S. (2019).
Spintronic Memories.
In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 19–21), Orlando, USA. (reposiTUm)

1877.   Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2019).
Statistical Characterization of BTI and RTN Using Integrated pMOS Arrays.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989904 (reposiTUm)

1876.   Selberherr, S. (2019).
Status and Future of Solid-State Non-Volatile Memory.
In Book of Abstracts of the International Conference on Frontier Sciences (p. 97), Beijing, China. (reposiTUm)

1875.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2019.8901721 (reposiTUm)

1874.   Cervenka, J., Weinbub, J. (2019).
Superposed States and the Wigner Approach.
In Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 50), Sozopol, Bulgaria. (reposiTUm)

1873.   de Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland. https://doi.org/10.1109/essderc.2019.8901780 (reposiTUm)

1872.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Three-Dimensional TCAD for Atomic Layer Processing.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 5), Chicago, IL, USA. (reposiTUm)

1871.   Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM.
In Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM) (p. 34), Heraklion, Greece. (reposiTUm)

1870.   Tyaginov, S., El-Sayed, A., Makarov, A., Chasin, A., Arimura, H., Vandemaele, M., Jech, M., Capogreco, E., Witters, L., Grill, A., De Keersgieter, A., Eneman, G., Linten, D., Kaczer, B. (2019).
Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993644 (reposiTUm)

1869.   Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing.
In Proc. 6th European Seminar on Computing (p. 1), Pilsen, Czech Republic. (reposiTUm)

1868.   Sverdlov, V., Selberherr, S. (2018).
A Single-Spin Switch.
In Conference Abstract Book, Keelung, Taiwan. (reposiTUm)

1867.   Benam, M., Nedjalkov, M., Selberherr, S. (2018).
A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach.
In Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18) (pp. 34–35), Borovets, Bulgaria. (reposiTUm)

1866.   Sverdlov, V., Selberherr, S. (2018).
Actual Problems in the Field of Spintronics.
In Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018 (p. 40), Berlin, Germany. (reposiTUm)

1865.   Simonka, V. (2018).
Advancements in Annealing and Oxidation Steps for Compound Semiconductor Power Devices.
Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual, Non-EU. (reposiTUm)

1864.   Illarionov, Y., Smithe, K., Waltl, M., Grady, R., Deshmukh, S., Pop, E., Grasser, T. (2018).
Annealing and Encapsulation of CVD-MoS2 FETs With 1010On/Off Current Ratio.
In 2018 76th Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc.2018.8442242 (reposiTUm)

1863.   Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Ragnarsson, L., Hellings, G., Brus, S., Cott, D., De Heyn, V., Groeseneken, G., Horiguchi, N., Ryckaert, J., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2018).
BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration.
In 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2018.8614559 (reposiTUm)

1862.   Tyaginov, S., Jech, M., Rzepa, G., Grill, A., El-Sayed, A., Pobegen, G., Makarov, A., Grasser, T. (2018).
Border Trap Based Modeling of SiC Transistor Transfer Characteristics.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727083 (reposiTUm)

1861.   Filipovic, L. (2018).
CMOS-Compatible Semiconductor-Based Gas Sensors.
In Book of Abstracts of Emerging Technologies Communication Microsystems Optoelectronics Sensors, Montreal, QC, Canada. (reposiTUm)

1860.   Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B. (2018).
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting From NBTI/PBTI Stress in nMOS/pMOS Transistors.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2A.2-1–2A.2-10), Waikoloa, HI, USA. (reposiTUm)

1859.   Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects: From Si to MoS2 FETs.
International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm)

1858.   Gnam, L., Manstetten, P., Selberherr, S., Weinbub, J. (2018).
Comparison of High-Performance Graph Coloring Algorithms.
In Proceedings of the Vienna Young Scientists Symposium (pp. 30–31), Wien, Austria. (reposiTUm)

1857.   Sverdlov, V., Selberherr, S. (2018).
Current and Shot Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 107–108), Bologna, Italy. (reposiTUm)

1856.   Vandemaele, M., Kaczer, B., Stanojevic, Z., Tyaginov, S., Makarov, A., Chasin, A., Mertens, H., Linten, D., Groeseneken, G. (2018).
Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727081 (reposiTUm)

1855.   Kosina, H., Kampl, M. (2018).
Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551734 (reposiTUm)

1854.   Weinbub, J., Ballicchia, M., Nedjalkov, M. (2018).
Electron Interference in a Double-Dopant Potential Structure.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 52–53), Kona. (reposiTUm)

1853.   Sverdlov, V., Selberherr, S. (2018).
Electron Spin for Modern and Future Microelectronics.
In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018 (p. 7), Moscow-Zvenigorod. (reposiTUm)

1852.   Foster, S., Thesberg, M., Vargiamidis, V., Neophytou, N. (2018).
Electronic Transport Simulations for Advanced Thermoelectric Materials.
​​​​Thermoelectric Network UK Meeting, Edinburgh, UK, EU. (reposiTUm)

1851.   Neophytou, N., Foster, S., Vargiamidis, V., Thesberg, M. (2018).
Electronic Transport Simulations in Materials With Embedded Nano-Inclusions for Enhanced Thermoelectric Power Factors.
Annual March Meeting of the American Physical Society, Portland, Non-EU. (reposiTUm)

1850.   Lahlalia, A., Neel, O., Shankar, R., Selberherr, S., Filipovic, L. (2018).
Enhanced Sensing Performance of Integrated Gas Sensor Devices.
In EUROSENSORS 2018, Dresden, D. https://doi.org/10.3390/proceedings2131508 (reposiTUm)

1849.   Gnam, L., Selberherr, S., Weinbub, J. (2018).
Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms.
In Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18) (p. 52), Borovets, Bulgaria. (reposiTUm)

1848.   Puschkarsky, K., Reisinger, H., Schlünder, C., Gustin, W., Grasser, T. (2018).
Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 218–221), Montreux, Austria. (reposiTUm)

1847.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Fast, Reliable, and Field-Free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-Pulse Switching.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 124–125), Kona. (reposiTUm)

1846.   Rupp, K., Rudolf, F., Weinbub, J. (2018).
Features of ViennaCL in PETSc.
In Book of Abstracts of the 2018 Austrian HPC Meeting (AHPC) (p. 18), Grundlsee, Austria, Austria. (reposiTUm)

1845.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Field-Free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551716 (reposiTUm)

1844.   Filipovic, L., Kampl, M., Knobloch, T., Rzepa, G., Weinbub, J. (2018).
Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik (Mit Virtual Reality).
Lange Nacht der Forschung 2018, Wien, Austria. (reposiTUm)

1843.   Hajian, S., Khakbaz, P., Moshayedi, M., Maddipatla, D., Narakathu, B., Turkani, V., Bazuin, B., Pourfath, M., Atashbar, M. (2018).
Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti₃C₂T͓x MXene as Ammonia Sensor: A First-Principles Study.
In 2018 IEEE SENSORS (pp. 1–4), New Delhi, India. https://doi.org/10.1109/ICSENS.2018.8589699 (reposiTUm)

1842.   Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2018).
Impact of the Effective Mass on the Mobility in Si Nanowire Transistors.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551630 (reposiTUm)

1841.   Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4h-Silicon Carbide.
In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT) (pp. 42–44), Barcelona, Spain. (reposiTUm)

1840.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM.
In Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018 (p. 32), Vienna, Austria. (reposiTUm)

1839.   Filipovic, L., de Orio, R. (2018).
Modeling the Influence of Grains and Material Interfaces on Electromigration.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551746 (reposiTUm)

1838.   Indalecio, G., Kosina, H. (2018).
Monte Carlo Simulation of Electron-Electron Interactions in Bulk Silicon.
In Book of Abstracts of The 12th International Conference on Scientific Computing in Electrical Engineering (pp. 97–98), Taormina, Italy. (reposiTUm)

1837.   Ghosh, J., Osintsev, D., Sverdlov, V., Ganguly, S. (2018).
Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis.
In 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2018.8354770 (reposiTUm)

1836.   Grasser, T. (2018).
Multiscale Reliability Modeling.
IEEE EDS Distinguished Lecture at the SINANO Sommer School 2018, Tarragona, Spain, EU. (reposiTUm)

1835.   Lee, J., Carillo-Nunez, H., Nedjalkov, M., Medina-Bailón, C., Sadi, T., Selberherr, S., Berrada, S., Georgiev, V., Asenov, A. (2018).
Nanowire FETs.
In 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) (pp. 1–4), Portland, USA. https://doi.org/10.1109/NMDC.2018.8605884 (reposiTUm)

1834.   Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2018).
On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727089 (reposiTUm)

1833.   Illarionov, Y. (2018).
On the Way to Commercial 2D Electronics...
2nd Zhejiang Sci-Tech University Forum for International Young Scholars, Hangzhou, China, Non-EU. (reposiTUm)

1832.   Manstetten, P. (2018).
Performance Improvements for Advanced Physical Etching and Deposition in Memory Technologies.
Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual, Non-EU. (reposiTUm)

1831.   Ballicchia, M., Weinbub, J., Dimov, I., Nedjalkov, M. (2018).
Recent Advances of the Wigner Signed-Particle Approach.
In Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM) (pp. 18–19), Sofia, Bulgaria. (reposiTUm)

1830.   Illarionov, Y., Molina- Mendoza, A., Waltl, M., Knobloch, T., Furchi, M., Mueller, T., Grasser, T. (2018).
Reliability of Next-Generation Field-Effect Transistors With Transition Metal Dichalcogenides.
In 2018 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2018.8353605 (reposiTUm)

1829.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field.
In Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 30–32), Orlando, Florida, USA. (reposiTUm)

1828.   Benam, M., Wołoszyn, M., Selberherr, S. (2018).
Self-Consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach.
In Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM) (pp. 20–21), Sofia, Bulgaria. (reposiTUm)

1827.   Sverdlov, V., Selberherr, S. (2018).
Shot Noise Enhancement at Spin-Dependent Hopping.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 6–7), Kona. (reposiTUm)

1826.   Neophytou, N., Foster, S., Vargiamaidis, V., Chakraborty, D., Oliveira, L., Kumarasinghe, C., Thesberg, M. (2018).
Simulation Studies of Nanostructured Thermoelectric Materials.
In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland. https://doi.org/10.1109/nano.2018.8626378 (reposiTUm)

1825.   Sverdlov, V., Selberherr, S. (2018).
Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor.
In Spintronics XI (pp. 1073235-1–1073235-8), San Diego, United States. https://doi.org/10.1117/12.2319271 (reposiTUm)

1824.   Sverdlov, V., Selberherr, S. (2018).
Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch.
In Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après (p. 49), Sardinia, Italy. (reposiTUm)

1823.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551728 (reposiTUm)

1822.   Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2018).
Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 15–16), Bologna, Italy. (reposiTUm)

1821.  J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
"Surface Morphology of 4H-SiC After Thermal Oxidation";
Vortrag: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 02.09.2018 - 06.09.2018; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018).

1820.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Switching Current Reduction in Advanced Spin-Orbit Torque MRAM.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 57–58), Bologna, Italy. (reposiTUm)

1819.   Filipovic, L., Lahlalia, A., Selberherr, S. (2018).
System-On-Chip Sensor Integration in Advanced CMOS Technology.
In Proceedings of the 233rd ECS Meeting (ECS), Seattle, Washington, USA. (reposiTUm)

1818.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Two-Pulse Sub-Ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field.
In Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après (p. 51), Sardinia, Italy. (reposiTUm)

1817.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Ultra-Fast Switching of a Free Magnetic Layer With Out-Of-Plane Magnetization in Spin-Orbit Torque MRAM Cells.
In Proceedings of the 233rd ECS Meeting (ECS), Seattle, Washington, USA. (reposiTUm)

1816.   Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H. (2018).
Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 3B.5-1–3B.5-10), Waikoloa, HI, USA. (reposiTUm)

1815.   Klemenschits, X., Selberherr, S., Filipovic, L. (2018).
Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 65–66), Bologna, Italy. (reposiTUm)

1814.   Sverdlov, V., Selberherr, S. (2017).
A Single-Spin Switch.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 93–94), Kona. (reposiTUm)

1813.   Manstetten, P., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085267 (reposiTUm)

1812.   Illarionov, Y., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T. (2017).
Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs.
In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2017.7947532 (reposiTUm)

1811.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2017).
Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment.
In Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 142–146), Orlando, Florida, USA. (reposiTUm)

1810.   Chasin, A., Franco, J., Kaczer, B., Putcha, V., Weckx, P., Ritzenthaler, R., Mertens, H., Horiguchi, N., Linten, D., Rzepa, G. (2017).
BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 5C-4.1–5C-4.7), Waikoloa, HI, USA. (reposiTUm)

1809.   Kaczer, B., Rzepa, G., Franco, J., Weckx, P., Chasin, A., Putcha, V., Bury, E., Simicic, M., Roussel, P., Hellings, G., Veloso, A., Matagne, P., Grasser, T., Linten, D. (2017).
Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2D-6.1–2D-6.7), Waikoloa, HI, USA. (reposiTUm)

1808.   Grill, A., Stampfer, B., Waltl, M., Im, K., Lee, J., Ostermaier, C., Ceric, H., Grasser, T. (2017).
Characterization and Modeling of Single Defects in GaN/AlGaN Fin-Mis-HEMTs.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2017.7936285 (reposiTUm)

1807.   Franco, J., Putcha, V., Vais, A., Sioncke, S., Waldron, N., Zhou, D., Rzepa, G., Roussel, P., Groeseneken, G., Heyns, M., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2017).
Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility N-Channel MOSFETs (Invited).
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268347 (reposiTUm)

1806.   Grasser, T. (2017).
Charge Trapping and Time-Dependent Variability in CMOS Transistors.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1805.   Grasser, T. (2017).
Charge Trapping and Time-Dependent Variability in Low-Voltage MOS Transistors.
Short Course at IEEE EDS Electron Devices Technology and Manufacturing Conference, Toyama, Japan, Non-EU. (reposiTUm)

1804.   Ballicchia, M., Weinbub, J., Nedjalkov, M., Selberherr, S. (2017).
Classical and Quantum Electron Evolution With a Repulsive Dopant.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 105–106), Kona. (reposiTUm)

1803.   Manstetten, P., Simonka, V., Diamantopoulos, G., Gnam, L., Makarov, A., Hössinger, A., Weinbub, J. (2017).
Computational and Numerical Challenges in Semiconductor Process Simulation.
In CSE17 Abstracts (p. 46), Atlanta, GA, USA. (reposiTUm)

1802.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 87–88), Kona. (reposiTUm)

1801.   Grasser, T. (2017).
Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1800.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

1799.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Electron Spin at Work in Modern and Emerging Devices.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN) (pp. 31–33), Wien, Austria, Austria. (reposiTUm)

1798.   Neophytou, N., Thesberg, M. (2017).
Electronic Transport Simulations in Nano-Crystalline Materials for Enhanced Thermoelectric Power Factors.
APS March Meeting, Los Angeles/USA, Austria. (reposiTUm)

1797.   Neophytou, N., Foster, S., Thesberg, M., Kosina, H. (2017).
Electronic Transport Simulations in Nanocomposites - Exploring the Features That Optimize the Thermoelectric Power Factor.
E-MRS Spring Meeting, Strasbourg, France, EU. (reposiTUm)

1796.   Neophytou, N., Thesberg, M. (2017).
Electronic Transport Simulations in Nanostructured Materials for Large Thermoelectric Power Factors.
European Congress and Exhibition on Advanced Materials and Processes (EUROMAT), VIRTUAL, Austria. (reposiTUm)

1795.   Illarionov, Y., Waltl, M., Smithe, K., Pop, E., Grasser, T. (2017).
Encapsulated MoS2 FETs With Improved Performance and Reliability.
In Proceedings of the GRAPCHINA 2017 (p. 1), Nanjing, China. (reposiTUm)

1794.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Approach.
In Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology (pp. 132–133), Sankt Petersburg, Russland. (reposiTUm)

1793.   Diamantopoulos, G., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems.
In 2017 17th International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy. https://doi.org/10.1109/iccsa.2017.7999648 (reposiTUm)

1792.   Mills, R., Adams, M., Brown, J., Fabien, M., Isaac, T., Knepley, M., Rupp, K., Smith, B., Zhang, H. (2017).
Experiences, Optimizations, and Future Directions With Petsc on the 2nd Generation ("Knights Landing") Intel Xeon Phi Processor.
In CSE17 Abstracts (pp. 370–371), Atlanta, GA, USA. (reposiTUm)

1791.   Selberherr, S., Windbacher, T., Makarov, A., Sverdlov, V. (2017).
Exploiting Spin-Transfer Torque for Non-Volatile Computing.
In Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017 (p. 130), Singapore. (reposiTUm)

1790.   Foster, S., Thesberg, M., Neophytou, N. (2017).
Fully Quantum Mechanical Transport Simulations for the Calculation of the Thermoelectric Power Factor in Nanocomposite Materials.
In Book of Abstracts 15th European Conference on Thermoelectrics, Nancy, Austria. (reposiTUm)

1789.   Kampl, M., Kosina, H., Baumgartner, O. (2017).
Hot Carrier Study Including E-E Scattering Based on a Backward Monte Carlo Method.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085322 (reposiTUm)

1788.   Makarov, A., Tyaginov, S., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T. (2017).
Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology.
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268381 (reposiTUm)

1787.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Müller, T., Grasser, T. (2017).
Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors.
In Meeting Abstracts (p. 2), Honolulu, Austria. (reposiTUm)

1786.   Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B. (2017).
Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up After BTI Stress.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 6A-2.1–6A-2.6), Waikoloa, HI, USA. (reposiTUm)

1785.   Selberherr, S. (2017).
Integrated Gas Sensors for Wearable Electronics.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1784.   Kampl, M., Kosina, H. (2017).
Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 147–148), Windermere, United Kingdom. (reposiTUm)

1783.   Sverdlov, V., Mahmoudi, H., Windbacher, T., Makarov, A., Weinbub, J., Selberherr, S. (2017).
MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching, Network (EMN) (pp. 33–34), Milan, Italy. (reposiTUm)

1782.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Modeling Spin-Dependent Phenomena for New Device Applications.
In CSE17 Abstracts (pp. 45–46), Atlanta, GA, USA. (reposiTUm)

1781.  V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 17.09.2017 - 22.09.2017; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017).

1780.   Filipovic, L., de Orio, R., Zisser, W., Selberherr, S. (2017).
Modeling Electromigration in Nanoscaled Copper Interconnects.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085289 (reposiTUm)

1779.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085280 (reposiTUm)

1778.   Sadi, T., Towie, E., Nedjalkov, M., Asenov, A., Selberherr, S. (2017).
Monte Carlo Particles in Quantum Wires: Effects of the Confinement.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 89–90), Sozopol, Bulgaria. (reposiTUm)

1777.   Foster, S., Chakraborty, D., Thesberg, M., Kosina, H., Neophytou, N. (2017).
Monte Carlo Simulations for Extracting the Power Factor in 1D Systems.
EPRSC Thermoelectric Network Meeting, Manchester, UK, EU. (reposiTUm)

1776.   Thesberg, M., Kosina, H. (2017).
NEGF Through Finite-Volume Discretization.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 173–174), Windermere, United Kingdom. (reposiTUm)

1775.   Simonka, V. (2017).
Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav.
Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia, EU. (reposiTUm)

1774.   Sverdlov, V., Makarov, A., Weinbub, J., Selberherr, S. (2017).
Non-Volatility by Spin in Modern Nanoelectronics.
In 2017 IEEE 30th International Conference on Microelectronics (MIEL), Beograd. https://doi.org/10.1109/miel.2017.8190061 (reposiTUm)

1773.   Cervenka, J., Filipovic, L. (2017).
Numerical Aspects of the Deterministic Solution of the Wigner Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 42–43), Waikoloa, Hawaii, USA. (reposiTUm)

1772.   Kosik, R., Kampl, M., Kosina, H. (2017).
On the Characteristic Neumann Equation and the Wigner Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 26–27), Waikoloa, Hawaii, USA. (reposiTUm)

1771.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

1770.   Sanan, P., Schenk, O., Bollhoefer, M., Rupp, K., May, D. (2017).
Preconditioners for Stokes Flow With Highly Heterogeneous Viscosity Structure: Saddle-Point Smoothing via Local Incomplete Factorization.
In CSE17 Abstracts (p. 258), Atlanta, GA, USA. (reposiTUm)

1769.   Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., Grasser, T. (2017).
Reliability Perspective of 2D Electronics.
International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Non-EU. (reposiTUm)

1768.   Illarionov, Y., Waltl, M., Jech, M., Kim, J., Akinwande, D., Grasser, T. (2017).
Reliability of Black Phosphorus Field-Effect Transistors With Respect to Bias-Temperature and Hot-Carrier Stress.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936338 (reposiTUm)

1767.   Ostermaier, C., Lagger, P. W., Reiner, M., Grill, A., Stradiotto, R., Pobegen, G., Grasser, T., Pietschnig, R., Pogany, D. (2017).
Review of Bias-Temperature Instabilities at the III-N/dielectric Interface.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

1766.   Rupp, K. (2017).
Semiconductor Device Simulation Approaches for Massively Parallel Computing Architectures.
SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA, Non-EU. (reposiTUm)

1765.   Sverdlov, V., Selberherr, S. (2017).
Shot Noise at Spin-Dependent Hopping in Tunnel Junctions With Ferromagnetic Electrodes.
In Bulletin of the APS April Meeting 2017, Los Angeles/USA, Austria. (reposiTUm)

1764.   Meller, G., Selberherr, S. (2017).
Simulation of Injection Currents Into Disordered Molecular Conductors.
In Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM), Aveiro, Portugal. (reposiTUm)

1763.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics.
In Abstracts of the BIT's 7th Annual World Congress of Nano Science, Technology-2017 (p. 343), Xi'an, China. (reposiTUm)

1762.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 88–90), Windermere, United Kingdom. (reposiTUm)

1761.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Spintronics as a Non-Volatile Complement to Nanoelectronics.
In Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017) (p. 10), Ljubljana, Slovenia. (reposiTUm)

1760.   Selberherr, S. (2017).
The Evolution and Potential Future of Microelectronics.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1759.   Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017).
The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm)

1758.   Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., Grasser, T. (2017).
Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation.
In Proceedings of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), South Lake Tahoe, CA, USA. (reposiTUm)

1757.   Gnam, L., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Towards a Metric for an Automatic Hull Mesh Coarsening Strategy.
In Proceedings of the Vienna Young Scientists Symposium (pp. 118–119), Wien, Austria. (reposiTUm)

1756.   Gnam, L., Weinbub, J., Rupp, K., Rudolf, F., Selberherr, S. (2017).
Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation.
In Proceedings of the 26th International Meshing Roundtable (IMR26) (p. 5), Austin, Texas, USA. (reposiTUm)

1755.   Rudolf, F., Morhammer, A., Rupp, K., Weinbub, J. (2017).
VSC School Project: Performance Enhancements of Algebraic Multigrid Methods in ViennaCL.
In Book of Abstracts of the 2017 Austrian HPC Meeting (AHPC) (p. 1), Grundlsee, Austria, Austria. (reposiTUm)

1754.   Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S. (2017).
Wigner Analysis of Surface Roughness in Quantum Wires.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 40–41), Waikoloa, Hawaii, USA. (reposiTUm)

1753.   Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S. (2017).
Wigner Modelling of Surface Roughness in Quantum Wires.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 171–172), Windermere, United Kingdom. (reposiTUm)

1752.   Weinbub, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2017).
Wigner-Signed Particles Study of Double Dopant Quantum Effects.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 50–51), Waikoloa, Hawaii, USA. (reposiTUm)

1751.   Djuricic, A., Puttonen, E., Dorninger, P., Nothegger, C., Harzhauser, M., Mandic, O., Székely, B., Pfeifer, N. (2016).
3D Laser Scanning and Paleontology.
In Proceedings (pp. 100–101), Wien, Austria. (reposiTUm)

1750.   Rupp, K., Weinbub, J. (2016).
A Computational Scientist's Perspective on Current and Future Hardware Architectures.
In Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC) (p. 24), Grundlsee, Austria, Austria. (reposiTUm)

1749.   Ghiassi, N., Mahdavi, A. (2016).
A Novel Approach to High-Resolution Urban-Level Building Energy Modeling.
In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm)

1748.   Illarionov, Y., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M., Grasser, T. (2016).
A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs.
In 74#^{th }Device Research Conference Digest (pp. 89–90), Santa Barbara , California, Austria. (reposiTUm)

1747.   Proskurnina, O., Pont, U., Schuss, M., Heiduk, E., Schober, P., Mahdavi, A. (2016).
A Computational Inquiry Into the Application of Vacuum Glazing in Building Retrofit.
In Proceedings of Vienna Young Scientists Symposium 2016 (pp. 26–27), Vienna, Austria. (reposiTUm)

1746.   Sharma, P., Tyaginov, S., Rauch, S., Franco, J., Kaczer, B., Makarov, A., Vexler, M., Grasser, T. (2016).
A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs.
In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599677 (reposiTUm)

1745.   Papaleo, S., Ceric, H. (2016).
A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574626 (reposiTUm)

1744.   Tahmasebi, F., Mahdavi, A. (2016).
An Inquiry Into Reliability of Occupant Behaviour Models for Building Performance Simulation.
In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm)

1743.   Giering, K., Rott, G., Rzepa, G., Reisinger, H., Puppala, A., Reich, T., Gustin, W., Grasser, T., Jancke, R. (2016).
Analog-Circuit NBTI Degradation and Time-Dependent NBTI Variability: An Efficient Physics-Based Compact Model.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574540 (reposiTUm)

1742.   Thesberg, M., Neophytou, N., Kosina, H. (2016).
Calculating the Power Factor of Nano-Composite Materials From Fully Quantum-Mechanical Large-Scale Simulations.
In Book of Abstracts 14th European Conference on Thermoelectrics, Nancy, Austria. (reposiTUm)

1741.   Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., Grasser, T. (2016).
Complete Extraction of Defect Bands Responsible for Instabilities in N and pFinFETs.
In 2016 Symposium on VLSI Technology Digest of Technical Papers (pp. 208–209), Kyoto, Japan. (reposiTUm)

1740.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440094 (reposiTUm)

1739.   Sverdlov, V., Selberherr, S. (2016).
Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures.
In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1738.   Filipovic, L., Selberherr, S. (2016).
Effects of the Deposition Process Variation on the Performance of Open TSVs.
In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA. https://doi.org/10.1109/ectc.2016.177 (reposiTUm)

1737.   Rovitto, M., Ceric, H. (2016).
Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias.
In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA. https://doi.org/10.1109/ectc.2016.49 (reposiTUm)

1736.   Selinger, A., Rupp, K., Selberherr, S. (2016).
Evaluation of Mobile ARM-Based SoCs for High Performance Computing.
In 24th High Performance Computing Symposium, Orlando, FL, USA. https://doi.org/10.22360/springsim.2016.hpc.022 (reposiTUm)

1735.   Neophytou, N., Thesberg, M., Kosina, H. (2016).
Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations.
In Book of Abstracts 14th European Conference on Thermoelectrics, Nancy, Austria. (reposiTUm)

1734.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 128–129), Bologna, Italy. (reposiTUm)

1733.   Naeimi, V., Elefante, S., Cao, S., Wagner, W., Dostálová, A., Bauer-Marschallinger, B. (2016).
Geophysical Parameters Retrieval From Sentinel-1 SAR Data: A Case Study for High Performance Computing at EODC.
In Proceedings of the 24th High Performance Computing Symposium, Pasadena, CA, USA. (reposiTUm)

1732.   Windbacher, T., Ullmann, B., Grill, A., Weinbub, J. (2016).
Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik.
European Researchers’ Night: beSCIENCEd 2016, Wien, Austria. (reposiTUm)

1731.   Filipovic, L., Singulani, A., Roger, F., Carniello, S., Selberherr, S. (2016).
Impact of Across-Wafer Variation on the Electrical Performance of TSVs.
In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), San Jose, USA. https://doi.org/10.1109/iitc-amc.2016.7507707 (reposiTUm)

1730.   Sverdlov, V., Selberherr, S. (2016).
Influence of Spin Relaxation on Trap-Assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440088 (reposiTUm)

1729.   Windbacher, T., Malm, B., Sverdlov, V., Östling, M., Selberherr, S. (2016).
Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 43), Kona. (reposiTUm)

1728.   Pont, U., Proskurnina, O., Taheri, M., Kropf, A., Sommer, B., Sommer-Nawara, M., Adam, G., Mahdavi, A. (2016).
Input Data Quality for Building Energy Certification: Recent Progress in the EDEN Project.
In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm)

1727.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment.
In Spintronics IX (pp. 99312M-1–99312M-12), San Diego, United States. https://doi.org/10.1117/12.2236151 (reposiTUm)

1726.   Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Logic-In-Memory: A Non-Volatile Processing Environment for the Post CMOS Age.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Germany. (reposiTUm)

1725.   Windbacher, T., Sverdlov, V., Selberherr, S. (2016).
Magnetic Nonvolatile Processing Environment.
In Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains (pp. 42–43), Samara, Russia. (reposiTUm)

1724.   Sverdlov, V., Makarov, A., Windbacher, T., Selberherr, S. (2016).
Magnetic Field Dependent Tunneling Magnetoresistance Through a Quantum Well Between Ferromagnetic Contacts.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605210 (reposiTUm)

1723.   Papaleo, S., Rovitto, M., Ceric, H. (2016).
Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall.
In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA. https://doi.org/10.1109/ectc.2016.19 (reposiTUm)

1722.   Nedjalkov, M., Weinbub, J., Selberherr, S. (2016).
Modeling Carrier Transport in Nanoscale Semiconductor Devices.
In Abstracts of the BIT's 6th Annual World Congress of Nano Science, Technology-2016 (p. 377), Xi'an, China. (reposiTUm)

1721.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Modeling Neutral Particle Flux in High Aspect Ratio Holes Using a One-Dimensional Radiosity Approach.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 68–69), Bologna, Italy. (reposiTUm)

1720.   Filipovic, L., Selberherr, S. (2016).
Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors.
In Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016 (p. 517), Singapore. (reposiTUm)

1719.   Grames, J., Fürnkranz-Prskawetz, A., Grass, D., Viglione, A., Blöschl, G. (2016).
Modeling the Interaction of Flooding Events and Economic Growth.
In VIENNA young SCIENTIST SYMPOSIUM (pp. 92–93), Austria. (reposiTUm)

1718.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2016).
Nanoelectronics With Spin.
In Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science (pp. 19–20), Dubai, United Arab Emirates. (reposiTUm)

1717.   Waltl, M., Grill, A., Rzepa, G., Goes, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T. (2016).
Nanoscale Evidence for the Superior Reliability of SiGe High-K pMOSFETs.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574644 (reposiTUm)

1716.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Novel Magnetic Devices for Memory and Non-Volatile Computing Applications.
In 2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS) (p. 14), Montreal, QC, Canada. (reposiTUm)

1715.   Kaczer, B., Amoroso, S., Hussin, R., Asenov, A., Franco, J., Weckx, P., Roussel, P., Rzepa, G., Grasser, T., Horiguchi, N. (2016).
On the Distribution of the FET Threshold Voltage Shifts Due to Individual Charged Gate Oxide Defects.
In Proceedings of the IEEE International Integrated Reliability Workshop (IIRW) (p. 3), South Lake Tahoe, CA, USA. (reposiTUm)

1714.   Tyaginov, S., Makarov, A., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016).
On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation.
In 2016 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2016.7904911 (reposiTUm)

1713.   Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2016).
On the Subthreshold Drain Current Sweep Hysteresis of 4h-SiC nMOSFETs.
In 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2016.7838392 (reposiTUm)

1712.   Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V., Brown, A., Millar, C., Asenov, A. (2016).
One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605139 (reposiTUm)

1711.   Morhammer, A., Rupp, K., Rudolf, F., Weinbub, J. (2016).
Optimized Sparse Matrix-Matrix Multilication for Multi-Core CPUs, GPUs and MICs.
In Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC) (p. 23), Grundlsee, Austria, Austria. (reposiTUm)

1710.   Rupp, K., Morhammer, A., Grasser, T., Jüngel, A. (2016).
Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors.
In Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering (p. 104), Florence, Italy. (reposiTUm)

1709.   Dembski, F. (2016).
Paris Post-Oil: Energy Conscious Urban Infill Development.
In Vienna young Scientists Symposium, June 9-10, 2016 (pp. 58–59), Vienna, Austria. (reposiTUm)

1708.   Nedjalkov, M., Ellinghaus, P., Weinbub, J., Selberherr, S., Sadi, T., Asenov, A., Wang, L., Amoroso, S. M., Towie, E. (2016).
Physical Models for Variation-Aware Device Simulation.
Workshop on Variability-Aware Design Technology Co-Optimization, Nuremberg, Germany, EU. (reposiTUm)

1707.   Thesberg, M., Neophytou, N., Pourfath, M., Kosina, H. (2016).
Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials.
Energy-Materials-Nanotechnology Meeting on Thermoelectric Materials (EMN), Orlando, USA, Non-EU. (reposiTUm)

1706.   Zhao, X., Kastlunger, G., Stadler, R. (2016).
Quantum Interference Effects in Coherent Electron Transport Through Single Molecule Junctions With Branched Compounds Containing Ferrocene.
In TU Wien - VSS Vienna Young Scientists Symposium (pp. 118–119), Wien, Austria. (reposiTUm)

1705.   Illarionov, Y., Waltl, M., Furchi, M., Mueller, T., Grasser, T. (2016).
Reliability of Single-Layer MoS<inf>2</inf> Field-Effect Transistors With SiO<inf>2</inf> And hBN Gate Insulators.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2016.7574543 (reposiTUm)

1704.   Kosina, H. (2016).
Semiconductor Device Modeling at the Nanoscale.
42nd International Conference on Nano Engineering, MNE 2016, Wien, Austria. (reposiTUm)

1703.   Weinbub, J., Hössinger, A. (2016).
Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach.
In 24th High Performance Computing Symposium, Orlando, FL, USA. https://doi.org/10.22360/springsim.2016.hpc.052 (reposiTUm)

1702.   Nedjalkov, M., Weinbub, J., Dimov, I., Selberherr, S. (2016).
Signed Particle Interpretation for Wigner-Quantum Electron Evolution.
In Abstracts Third National Congress of Physical Sciences (p. 1), Sofia, Bulgaria. (reposiTUm)

1701.   Makarov, A., Sverdlov, V., Windbacher, T., Selberherr, S. (2016).
Silicon Spintronics.
In Proceedings of the ICEM 2016 (p. 1), Singapur. (reposiTUm)

1700.   Wang, L., Sadi, T., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2016).
Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 34–35), Bologna, Italy. (reposiTUm)

1699.   Sverdlov, V., Selberherr, S. (2016).
Spin-Dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 116–117), Bologna, Italy. (reposiTUm)

1698.   Ceric, H., Orio, R., Rovitto, M. (2016).
TCAD Approach for the Assessment of Interconnect Reliability.
In Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP) (p. T21), Bad Schandau, Germany. (reposiTUm)

1697.   Illarionov, Y., Waltl, M., Kim, J., Akinwande, D., Grasser, T. (2016).
Temperature-Dependent Hysteresis in Black Phosphorus FETs.
In Proceedings of the 2016 Graphene Week, Delft, Netherlands. (reposiTUm)

1696.   Pont, U., Ghiassi, N., Taheri, M., Bräuer, R., Mahdavi, A. (2016).
The BAU_WEB-Project: Exploring the Potential of State-Of-The-Art Web-Technologies for Building Product Data Acquisition and Management.
In Proceedings of Vienna Young Scientists Symposium 2016 (pp. 28–29), Vienna, Austria. (reposiTUm)

1695.   Nedjalkov, M., Weinbub, J., Selberherr, S. (2016).
The Description of Carrier Transport for Quantum Systems.
In Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum (pp. 41–42), Phuket, Thailand. (reposiTUm)

1694.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register.
In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599648 (reposiTUm)

1693.   Grasser, T., Waltl, M., Rzepa, G., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Reisinger, H., Kaczer, B. (2016).
The “permanent” Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574504 (reposiTUm)

1692.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605190 (reposiTUm)

1691.   Sverdlov, V., Ghosh, J., Selberherr, S. (2016).
Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 7), Kona. (reposiTUm)

1690.   Ettlinger, A., Retscher, G. (2016).
Use of Magnetic Fields in Combination With Wi-Fi and RFID for Indoor Positioning.
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1689.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes.
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1688.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605198 (reposiTUm)

1687.   Karner, M., Baumgartner, O., Stanojevic, Z., Schanovsky, F., Strof, G., Kernstock, C., Karner, H., Rzepa, G., Grasser, T. (2016).
Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations.
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1686.   Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S. (2016).
Wigner Modelling of Quantum Wires.
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1685.   Nedjalkov, M., Weinbub, J., Ellinghaus, P., Selberherr, S. (2016).
Wigner Signed Particles - An Intuitive Alternative of Particle-Wave Duality.
SEMODAY Meeting, Florence, Italy, EU. (reposiTUm)

1684.   Wang, L., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2015).
3D Electro-Thermal Simulations of Bulk FinFETs With Statistical Variations.
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1683.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering.
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1682.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
A Novel Method of SOT-MRAM Switching.
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1681.   Rupp, K., Jüngel, A., Grasser, T. (2015).
A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC.
Copper Mountain Conference on Multigrid Methods, Copper Mountain, CO, USA, Non-EU. (reposiTUm)

1680.   Kefayati, A., Pourfath, M., Kosina, H. (2015).
A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2.
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1679.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
A Universal Nonvolatile Processing Environment.
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1678.   Wimmer, Y., Goes, W., El-Sayed, A., Shluger, A., Grasser, T. (2015).
A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide.
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1677.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063763 (reposiTUm)

1676.   Grasser, T. (2015).
Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation.
D2T Symposium, Tokyo, Japan, Non-EU. (reposiTUm)

1675.   Wang, L., Sadi, T., Nedjalkov, M., Brown, A., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2015).
An Advanced Electro-Thermal Simulation Methodology for Nanoscale Device.
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1674.   Wang, L., Sadi, T., Nedjalkov, M., Brown, A., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2015).
An Advanced Electro-Thermal Simulation Methodology for Nanoscale Device.
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1673.   Rovitto, M., Zisser, W., Ceric, H. (2015).
Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs.
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1672.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015) (pp. 650–651), Fukuoka, Japan. (reposiTUm)

1671.   Kosina, H. (2015).
Blessing or Curse: Dissipative Quantum Transport in Nano-Scale Devices.
Workshop “From Atom to Transistor” at the 45th European Solid-State Device Research Conference (ESSDERC), Graz, Austria. (reposiTUm)

1670.   Selberherr, S. (2015).
CMOS-Compatible Spintronic Devices.
IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm)

1669.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
CMOS-compatible Spintronic Devices.
In 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil. https://doi.org/10.1109/sbmicro.2015.7298103 (reposiTUm)

1668.   Neophytou, N., Thesberg, M., Pourfath, M., Kosina, H. (2015).
Calculations of the Thermopower in Materials With Nano-Inclusions Using Quantum Mechanical Simulations.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

1667.   Rzepa, G., Gös, W., Kaczer, B., Grasser, T. (2015).
Characterization and Modeling of Reliability Issues in Nanoscale Devices.
In Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015 (pp. 2445–2448), Rio de Janeiro, Brasilien. (reposiTUm)

1666.   Illarionov, Y., Vexler, M., Fedorov, V., Suturin, S., Sokolov, N., Grasser, T. (2015).
Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics.
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015) (pp. 330–331), Fukuoka, Japan. (reposiTUm)

1665.   Ullmann, B., Waltl, M., Grasser, T. (2015).
Characterization of the Permanent Component of MOSFET Degradation Mechanisms.
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1664.   Grasser, T. (2015).
Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment.
CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland, EU. (reposiTUm)

1663.   Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T. (2015).
Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs.
In 2015 IEEE International Integrated Reliability Workshop (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2015.7437064 (reposiTUm)

1662.   Ceric, H., Selberherr, S. (2015).
Compact Model for Solder Bump Electromigration Failure.
In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France. https://doi.org/10.1109/iitc-mam.2015.7325651 (reposiTUm)

1661.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs.
In Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (p. 60), Maastricht. (reposiTUm)

1660.   Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

1659.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Concept of a SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 140–141), Fukuoka, Japan. (reposiTUm)

1658.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063829 (reposiTUm)

1657.   Papaleo, S., Zisser, W., Ceric, H. (2015).
Effects of the Initial Stress at the Bottom of Open TSVs.
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1656.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs With a Common Free Layer.
In Proceedings of 21st Iberchip Worshop, Montevideo, Uruguay. (reposiTUm)

1655.   Baumgartner, O., Filipovic, L., Kosina, H., Karner, M., Stanojevic, Z., Cheng-Karner, H. (2015).
Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292294 (reposiTUm)

1654.   Selinger, A., Ojdanic, D., Rupp, K., Langer, E. (2015).
Eigenvalue Computations on Graphics Processing Units.
In Proceedings of the 2015 Vienna Young Scientist Symposium (pp. 40–41), Wien, Austria. (reposiTUm)

1653.   Rovitto, M., Zisser, W., Ceric, H., Grasser, T. (2015).
Electromigration Modelling of Void Nucleation in Open Cu-TSVs.
In 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Ghent, Belgium. https://doi.org/10.1109/eurosime.2015.7103100 (reposiTUm)

1652.   Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2015).
Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films.
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1651.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization.
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1650.   Ghosh, J., Osintsev, D., Sverdlov, V., Weinbub, J., Selberherr, S. (2015).
Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach.
In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 285–292), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_31 (reposiTUm)

1649.   Demel, H., Stanojevic, Z., Karner, M., Rzepa, G., Grasser, T. (2015).
Expanding TCAD Simulations From Grid to Cloud.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292290 (reposiTUm)

1648.   Gerrer, L., Hussin, R., Amoroso, S., Franco, J., Weckx, P., Simicic, M., Horiguchi, N., Kaczer, B., Grasser, T., Asenov, A. (2015).
Experimental Evidences and Simulations of Trap Generation Along a Percolation Path.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324755 (reposiTUm)

1647.   Knepley, M., Rupp, K., Terrel, A. (2015).
FEM Integration With Quadrature on the GPU.
SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA, Non-EU. (reposiTUm)

1646.   Papaleo, S., Zisser, W., Ceric, H. (2015).
Factors That Influence Delamination at the Bottom of Open TSVs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292350 (reposiTUm)

1645.   Rudolf, F., Weinbub, J., Rupp, K., Resutik, P., Morhammer, A., Selberherr, S. (2015).
Free Open Source Mesh Healing for TCAD Device Simulations.
In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 293–300), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_32 (reposiTUm)

1644.   Grasser, T., Waltl, M., Wimmer, Y., Goes, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes.
In 2015 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2015.7409739 (reposiTUm)

1643.   Roger, F., Singulani, A., Carniello, S., Filipovic, L., Selberherr, S. (2015).
Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation.
In 2015 International Workshop on CMOS Variability (VARI), Salvador, Brazil. https://doi.org/10.1109/vari.2015.7456561 (reposiTUm)

1642.   Karner, M., Stanojevic, Z., Kernstock, C., Baumgartner, O., Cheng-Karner, H. (2015).
Hierarchical TCAD Device Simulation of FinFETs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292308 (reposiTUm)

1641.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., Grasser, T. (2015).
Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112834 (reposiTUm)

1640.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063778 (reposiTUm)

1639.   Ceric, H., Rovitto, M. (2015).
Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292292 (reposiTUm)

1638.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 93–94), Urbana-Champaign, IL, USA. (reposiTUm)

1637.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Improved Drive-Current Into Nanoscaled Channels Using Electrostatic Lenses.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292249 (reposiTUm)

1636.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292357 (reposiTUm)

1635.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film.
In Book of Abstracts of the 2015 E-MRS Fall Meeting (p. 1), Strasbourg, France. (reposiTUm)

1634.   Ghosh, J., Sverdlov, V., Selberherr, S. (2015).
Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films.
In Program and Abstract Book of the 8th International School, Conference on Spintronics and Quantum Information Technology (p. 130), Cracow. (reposiTUm)

1633.   Ghosh, J., Sverdlov, V., Selberherr, S. (2015).
Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film.
In 2015 International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2015.7301961 (reposiTUm)

1632.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292313 (reposiTUm)

1631.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Interplay Between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324741 (reposiTUm)

1630.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures.
In Book of Abstracts 19th Conference on Insulating Films on Semiconductors (pp. 235–236), Cracow, Poland. (reposiTUm)

1629.   Filipovic, L., Singulani, A., Roger, F., Carniello, S., Selberherr, S. (2015).
Intrinsic Stress Analysis of Tungsten-Lined Open TSVs.
In Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (p. 71), Maastricht. (reposiTUm)

1628.   Filipovic, L., Selberherr, S. (2015).
Kinetics of Droplet Motion During Spray Pyrolysis.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Droplets (EMN) (pp. 127–128), Phuket, Thailand. (reposiTUm)

1627.   Kernstock, C., Stanojevic, Z., Baumgartner, O., Karner, M. (2015).
Layout-Based TCAD Device Model Generation.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292293 (reposiTUm)

1626.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Memory-Efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations.
In 2015 International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2015.7301955 (reposiTUm)

1625.   Rudolf, F., Weinbub, J., Rupp, K., Resutik, P., Selberherr, S. (2015).
Mesh Healing for TCAD Simulations.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 66), Sozopol, Bulgaria. (reposiTUm)

1624.   Rzepa, G., Waltl, M., Goes, W., Kaczer, B., Grasser, T. (2015).
Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292279 (reposiTUm)

1623.   Sharma, P., Jech, M., Tyaginov, S., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Grasser, T. (2015).
Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292258 (reposiTUm)

1622.   Franco, J., Kaczer, B., Roussel, P., Bury, E., Mertens, H., Ritzenthaler, R., Grasser, T., Horiguchi, N., Thean, A., Groeseneken, G. (2015).
NBTI in Si<inf>0.55</Inf>Ge<inf>0.45</Inf> Cladding P-FinFETs: Porting the Superior Reliability From Planar to 3D Architectures.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112694 (reposiTUm)

1621.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Buffered Magnetic Logic Gate Grid.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

1620.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing.
In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 15–16), Orlando, USA. (reposiTUm)

1619.   Rupp, K., Balay, S., Brown, J., Knepley, M., McInnes, L., Smith, B. (2015).
On the Evolution of User Support Topics in Computational Science and Engineering Software.
In Computational Science and Engineering Software Sustainability and Productivity Challenges (CSESSP) Workshop (pp. 1–2), Rockville, MD, USA. (reposiTUm)

1618.   Stradiotto, R., Pobegen, G., Ostermaier, C., Grasser, T. (2015).
On the Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements.
In 2015 45th European Solid State Device Research Conference (ESSDERC) - Proceedings, Montreux, Austria. https://doi.org/10.1109/ESSDERC.2015.7324716 (reposiTUm)

1617.   Wimmer, Y., Gös, W., El-Sayed, A., Shluger, A., Grasser, T. (2015).
On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 97–98), Urbana-Champaign, IL, USA. (reposiTUm)

1616.   Tyaginov, S., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T. (2015).
On the Temperature Behavior of Hot-Carrier Degradation.
In 2015 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2015.7437088 (reposiTUm)

1615.   Grasser, T., Waltl, M., Goes, W., Wimmer, Y., El-Sayed, A., Shluger, A., Kaczer, B. (2015).
On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112739 (reposiTUm)

1614.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations.
In Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT) (p. 1), Dresden, Germany. (reposiTUm)

1613.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

1612.   Cervenka, J., Ellinghaus, P., Nedjalkov, M., Langer, E. (2015).
Optimization of the Deterministic Solution of the Discrete Wigner Equation.
In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 269–276), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_29 (reposiTUm)

1611.   Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P., Tyaginov, S., Bina, M., Wimmer, Y., Procel, L., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A. (2015).
Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112706 (reposiTUm)

1610.   Grasser, T. (2015).
Oxide Defects in MOS Transistors: Characterization and Modeling.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1609.   Rupp, K. (2015).
PETSc on GPUs and MIC: Current Status and Future Directions.
Workshop: Celebrating 20 Years of Computational Science with PETSc Tutorial and Conference, Argonne National Laboratory, IL, USA, Non-EU. (reposiTUm)

1608.   Weinbub, J., Ellinghaus, P., Selberherr, S. (2015).
Parallelization of the Two-Dimensional Wigner Monte Carlo Method.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 73), Sozopol, Bulgaria. (reposiTUm)

1607.   Cervenka, J., Ellinghaus, P. (2015).
Preconditioned Deterministic Solver for the Wigner Equation.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 31), Sozopol, Bulgaria. (reposiTUm)

1606.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices.
In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China. https://doi.org/10.1109/ispsd.2015.7123471 (reposiTUm)

1605.   Filipovic, L., Selberherr, S. (2015).
Processing of Integrated Gas Sensor Devices.
In TENCON 2015 - 2015 IEEE Region 10 Conference, Macau, China. https://doi.org/10.1109/tencon.2015.7372781 (reposiTUm)

1604.   Harrer, A., Reininger, P., Gansch, R., Schwarz, B., MacFarland, D., Zederbauer, T., Detz, H., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2015).
Quantum Cascade Detectors for Sensing Applications.
ICAVS8, Wien, Austria. (reposiTUm)

1603.   Grasser, T. (2015).
Recent Progress in Understanding the Bias Temperature Instability: From Single Traps to Distributions.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1602.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS) (pp. 105–106), Beijing, China. (reposiTUm)

1601.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS). https://doi.org/10.1109/nvmts.2015.7457479 (reposiTUm)

1600.   Rupp, K. (2015).
Scaling Deterministic Solution of the Boltzmann Transport Equation on Heterogeneous Computing Platforms.
In Scalable Methods for Kinetic Equations - Presentation Titles and Abstracts (p. 17), Oak Ridge, TN, USA. (reposiTUm)

1599.   Weinbub, J., Dang, F., Gillberg, T., Selberherr, S. (2015).
Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method.
In Proceedings of the High Performance Computing Symposium (HPC) (pp. 217–224). (reposiTUm)

1598.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon Spintronics.
In Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting" (pp. 44–45), Lviv, Ukrain. (reposiTUm)

1597.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon Spintronics: Recent Advances and Challenges.
In Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT) (pp. 6–7), Samara, Russia. (reposiTUm)

1596.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon and CMOS-Compatible Spintronics.
In Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015) (pp. 17–20), Vienna, Austria, Austria. (reposiTUm)

1595.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

1594.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 35–36), Urbana-Champaign, IL, USA. (reposiTUm)

1593.   Osintsev, D., Ghosh, J., Sverdlov, V., Weinbub, J., Selberherr, S. (2015).
Spin Lifetime in MOSFETs: A High Performance Computing Approach.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 60–61), Sozopol, Bulgaria. (reposiTUm)

1592.   Sverdlov, V., Selberherr, S. (2015).
Spin-Based CMOS-Compatible Devices.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 69), Sozopol, Bulgaria. (reposiTUm)

1591.   Sverdlov, V., Selberherr, S. (2015).
Spin-Based Silicon and CMOS-Compatible Devices.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

1590.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Spin-Driven Applications of Silicon and CMOS-Compatible Devices.
In Abstracts of the BIT's 5th Annual Congress of Nano Science, Technology-2015 (p. 175), Xi'an, China. (reposiTUm)

1589.   Sverdlov, V., Selberherr, S. (2015).
Spin-Based Devices for Future Microelectronics.
In 2015 International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan. https://doi.org/10.1109/isne.2015.7132030 (reposiTUm)

1588.   Sverdlov, V., Selberherr, S. (2015).
Spin-Dependent Trap-Assisted Tunneling Including Spin Relaxation at Room Temperature.
In Program and Abstract Book of the 8th International School, Conference on Spintronics and Quantum Information Technology (p. 114), Cracow. (reposiTUm)

1587.   Sverdlov, V., Selberherr, S. (2015).
Spin-Dependent Trap-Assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

1586.   Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015).
Strain Engineering of Single-Layer MoS2.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324777 (reposiTUm)

1585.   Sverdlov, V., Osintsev, D., Ghosh, J., Selberherr, S. (2015).
Strained Silicon-On-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown (p. 63), Mallorca, Spain. (reposiTUm)

1584.   Filipovic, L., Selberherr, S. (2015).
Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

1583.   Filipovic, L., Selberherr, S. (2015).
Stress in Three-Dimensionally Integrated Sensor Systems.
In Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT) (p. 342), Singapore. (reposiTUm)

1582.   Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S. (2015).
Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality.
In Proceedings of the 24th International Meshing Roundtable (IMR24) (p. 5), Austin, Texas, USA. (reposiTUm)

1581.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors.
In Abstracts Graphene 2015 (p. 1), Bilbao, Spain. (reposiTUm)

1580.   Nedjalkov, M., Ellinghaus, P., Selberherr, S. (2015).
The Aharanov-Bohm Effect From a Phase Space Perspective.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 59–60), Sozopol, Bulgaria. (reposiTUm)

1579.   Selberherr, S. (2015).
The Evolution and Potential Future of Microelectronics.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1578.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
The Influence of Electrostatic Lenses on Wave Packet Dynamics.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 39–40), Sozopol, Bulgaria. (reposiTUm)

1577.   Nazemi, S., Soleimani, E., Pourfath, M., Kosina, H. (2015).
The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 333–336), Washington, DC, United States. (reposiTUm)

1576.   Kaczer, B., Franco, J., Weckx, P., Roussel, P., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Kukner, H., Raghavan, P., Catthoor, F., Rzepa, G., Goes, W., Grasser, T. (2015).
The Defect-Centric Perspective of Device and Circuit Reliability &Amp;#x2014; From Individual Defects to Circuits.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324754 (reposiTUm)

1575.   Ostermaier, C., Lagger, P. W., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2015).
The Role of Electron Transport in the Charge Trapping at the III-N/dielectric Interface in AlGaN/GaN MIS-HEMT Structures.
Semiconductor Interface Specialists Conference, Arlington, VA, USA, Non-EU. (reposiTUm)

1574.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Thermoelectric Efficiency Improvements Through Grain Shape Optimization: A Non-Equilibrium Green's Function Study.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 70), Sozopol, Bulgaria. (reposiTUm)

1573.   Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2015).
Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF.
In Proceedings of the International Workshop on Computational Electronics (IWCE) (p. 4), Urbana-Champaign, IL, USA. (reposiTUm)

1572.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Variation of Spin Lifetime With Spin Injection Orientation in Strained Thin Silicon Films.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

1571.   Rupp, K., Tillet, P., St Clere Smithe, T., Karovic, N., Weinbub, J., Rudolf, F. (2015).
ViennaCL - Fast Linear Algebra for Multi and Many-Core Architectures.
SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA, Non-EU. (reposiTUm)

1570.   Rupp, K., Bina, M., Morhammer, A., Grasser, T., Jüngel, A. (2015).
ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method.
Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany, EU. (reposiTUm)

1569.   Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S. (2015).
ViennaWD - Applications.
In Booklet of the International Wigner Workshop (IW2) (p. 9), Waikoloa, Hawaii, USA. (reposiTUm)

1568.   Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
ViennaWD - Status and Outlook.
In Booklet of the International Wigner Workshop (IW2) (p. 8), Waikoloa, Hawaii, USA. (reposiTUm)

1567.   Filipovic, L., Stanojevic, Z., Baumgartner, O., Kosina, H. (2014).
3D Modeling of Direct Band-To-Band Tunneling in Nanowire TFETs.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

1566.   Ceric, H., Orio, R., Singulani, A., Selberherr, S. (2014).
3D Technology Interconnect Reliability TCAD.
In Proceedings of the 2014 Pan Pacific Microelectronics Symposium (pp. 1–8), Big Island of Hawaii, USA. (reposiTUm)

1565.   Wang, L., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2014).
3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931615 (reposiTUm)

1564.   Weinbub, J., Rupp, K., Rudolf, F. (2014).
A Flexible Material Database for Computational Science and Engineering.
In Proc. 4th European Seminar on Computing (p. 226), Pilsen, Czech Republic. (reposiTUm)

1563.   Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2014).
A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors.
In Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 1–2), Vancouver, Canada. (reposiTUm)

1562.   Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Reisinger, H., Kaczer, B., Grasser, T. (2014).
A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-Scaled MOSFETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT13.1–XT13.6), Phoenix. (reposiTUm)

1561.   Waltl, M., Gös, W., Rott, K., Reisinger, H., Grasser, T. (2014).
A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT18.1–XT18.5), Phoenix. (reposiTUm)

1560.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014).
A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931570 (reposiTUm)

1559.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Franco, J., Kaczer, B. (2014).
A Unified Perspective of RTN and BTI.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 4A.5.1–4A.5.7), Phoenix. (reposiTUm)

1558.   Filipovic, L., Selberherr, S. (2014).
About Processes and Performance of Integrated Gas Sensor Components.
In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 96–97), Orlando, USA. (reposiTUm)

1557.   Rupp, K., Tillet, P., Jungel, A., Grasser, T. (2014).
Achieving Portable High Performance for Iterative Solvers on Accelerators.
In Book of Abstracts (p. 815), Erlangen, Germany. (reposiTUm)

1556.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels.
In Abstracts of The 18th European Conference on Mathematics for Industry (p. 1), Taormina, Italy. (reposiTUm)

1555.   Goes, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T. (2014).
Advanced Modeling of Charge Trapping: RTN, 1/F Noise, SILC, and BTI.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931567 (reposiTUm)

1554.   Harrer, A., Reininger, P., Schwarz, B., Gansch, R., Kalchmair, S., Detz, H., Zederbauer, T., MacFarland, D., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2014).
Advances in Quantum Cascade Detector Design.
4th International Nanophotonics Meeting 2014, Igls, Austria. (reposiTUm)

1553.   Moradinasab, M., Pourfath, M., Kosina, H. (2014).
An Instability Study in Terahertz Quantum Cascade Lasers.
In Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN) (p. 10), Savannah, GA, USA. (reposiTUm)

1552.   Rupp, K., Rudolf, F., Weinbub, J., Jungel, A., Grasser, T. (2014).
Automatic Finite Volume Discretizations Through Symbolic Computations.
In Proc. 4th European Seminar on Computing (p. 192), Pilsen, Czech Republic. (reposiTUm)

1551.   Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H. (2014).
BTB Tunneling in InAs/Si Heterojunctions.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931609 (reposiTUm)

1550.   Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H. (2014).
Band-To-Band Tunneling in 3D Devices.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 13–14), Urbana-Champaign, IL, USA. (reposiTUm)

1549.   Grasser, T. (2014).
Bias Temperature Instability in CMOS Nanodevices.
SINANO Summer School, Bertinoro, Italy, EU. (reposiTUm)

1548.   Illarionov, Y., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T. (2014).
Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge.
In 2014 IEEE Silicon Nanoelectronics Workshop (pp. 29–30), Honolulu. (reposiTUm)

1547.   Rupp, K., Bina, M., Wimmer, Y., Jungel, A., Grasser, T. (2014).
Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931639 (reposiTUm)

1546.   Grasser, T. (2014).
Characterization and Modeling of Charge Trapping and Hot Carrier Degradation.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

1545.   Grasser, T. (2014).
Characterization and Modeling of Charge Trapping in CMOS Transistors.
International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy, EU. (reposiTUm)

1544.   Grasser, T., Rzepa, G., Waltl, M., Goes, W., Rott, K., Rott, G., Reisinger, H., Franco, J., Kaczer, B. (2014).
Characterization and Modeling of Charge Trapping: From Single Defects to Devices.
In 2014 IEEE International Conference on IC Design & Technology, Austin, TX, USA. https://doi.org/10.1109/icicdt.2014.6838620 (reposiTUm)

1543.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design.
In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 26), Gdynia, Poland. (reposiTUm)

1542.   Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In Future Information Engineering. https://doi.org/10.2495/icie130451 (reposiTUm)

1541.   Stanojevic, Z., Baumgartner, O., Filipovic, L., Kosina, H. (2014).
Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

1540.   Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., Orio, R., Selberherr, S. (2014).
Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs.
In Book of Abstracts (p. 2), Chemnitz, Germany. (reposiTUm)

1539.   Cervenka, J., Ellinghaus, P., Nedjalkov, M. (2014).
Deterministic Solution of the Discrete Wigner Equation.
In Eighth International Conference on Numerical Methods and Applications (p. 36), Borovets, Bulgaria. (reposiTUm)

1538.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Kaczer, B., Ceric, H., Grasser, T. (2014).
Dominant Mechanisms of Hot-Carrier Degradation in Short- And Long-Channel Transistors.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049512 (reposiTUm)

1537.   Filipovic, L., de Orio, R., Selberherr, S., Singulani, A., Roger, F., Minixhofer, R. (2014).
Effects of Sidewall Scallops on Open Tungsten TSVs.
In 2014 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2014.6860633 (reposiTUm)

1536.   Filipovic, L., de Orio, R., Selberherr, S. (2014).
Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898137 (reposiTUm)

1535.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
Efficient Calculation of the Two-Dimensional Wigner Potential.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 19–20), Urbana-Champaign, IL, USA. (reposiTUm)

1534.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 48), Maastricht. (reposiTUm)

1533.   Ceric, H., Zisser, W., Rovitto, M., Selberherr, S. (2014).
Electromigration in Solder Bumps: A Mean-Time-To-Failure TCAD Study.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931603 (reposiTUm)

1532.   Ceric, H., Selberherr, S. (2014).
Electromigration Induced Failure of Solder Bumps and the Role of IMC.
In IEEE International Interconnect Technology Conference, San Jose, USA. https://doi.org/10.1109/iitc.2014.6831891 (reposiTUm)

1531.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Induced Resistance Increase in Open TSVs.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931610 (reposiTUm)

1530.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898179 (reposiTUm)

1529.   Ceric, H., Selberherr, S. (2014).
Electromigration Reliability of Solder Bumps.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898145 (reposiTUm)

1528.   Sverdlov, V., Osintsev, D., Selberherr, S. (2014).
Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous K P-Based Approach.
In Abstracts of The 18th European Conference on Mathematics for Industry (pp. 454–456), Taormina, Italy. (reposiTUm)

1527.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Gös, W. (2014).
Evidence for Defect Pairs in SiON pMOSFETs.
In Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 228–263), Singapore. (reposiTUm)

1526.   Stanojevic, Z., Filipovic, L., Baumgartner, O., Kosina, H. (2014).
Fast Methods for Full-Band Mobility Calculation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 51–52), Urbana-Champaign, IL, USA. (reposiTUm)

1525.   Neophytou, N., Kosina, H. (2014).
Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach.
In Book of Abstracts (p. 1), Vienna, Austria. (reposiTUm)

1524.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865862 (reposiTUm)

1523.   Sverdlov, V., Osintsev, D., Selberherr, S. (2014).
From Strained SOI MOSFET to Spin MOSFET With Strain: A Modeling Approach.
Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Austria. (reposiTUm)

1522.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
Full-Band Modeling of Mobility in P-Type FinFETs.
In 2014 IEEE Silicon Nanoelectronics Workshop (pp. 83–84), Honolulu. (reposiTUm)

1521.   Neophytou, N., Karamitaheri, H., Kosina, H. (2014).
Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers.
In Abstracts of The 18th European Conference on Mathematics for Industry (p. 1), Taormina, Italy. (reposiTUm)

1520.   Stanojevic, Z., Filipovic, L., Baumgartner, O., Karner, M., Kernstock, C., Kosina, H. (2014).
Full-Band Transport in Ultra-Narrow P-Type Si Channels: Field, Orientation, Strain.
In Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS) (p. 4), Bologna, Austria. (reposiTUm)

1519.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
High Performance MRAM-based Stateful Logic.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813912 (reposiTUm)

1518.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
Implications of the Coherence Length on the Discrete Wigner Potential.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 155–156), Urbana-Champaign, IL, USA. (reposiTUm)

1517.   Moradinasab, M., Pourfath, M., Kosina, H. (2014).
Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers.
In International Quantum Cascade Lasers School, Workshop 2014 (pp. 182–183), Monte Verita, Ascona, Switzerland. (reposiTUm)

1516.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Increasing Mobility and Spin Lifetime With Shear Strain in Thin Silicon Films.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

1515.   Osintsev, D., Sverdlov, V., Windbacher, T., Selberherr, S. (2014).
Increasing Mobility and Spin Lifetime With Shear Strain in Thin Silicon Films.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931596 (reposiTUm)

1514.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931622 (reposiTUm)

1513.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813893 (reposiTUm)

1512.   Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M. (2014).
Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931577 (reposiTUm)

1511.   Sverdlov, V., Mahmoudi, H., Makarov, A., Windbacher, T., Selberherr, S. (2014).
Magnetic Tunnel Junctions for Future Memory and Logic-In-Memory Applications.
In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 17), Gdynia, Poland. (reposiTUm)

1510.   Schrems, M., Siegert, J., Dorfi, P., Kraft, J., Stueckler, E., Schrank, F., Selberherr, S. (2014).
Manufacturing of 3D Integrated Sensors and Circuits.
In 2014 44th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2014.6948785 (reposiTUm)

1509.   Kaczer, B., Chen, C., Weckx, P., Roussel, P., Toledano-Luque, M., Cho, M., Watt, J., Chanda, K., Groeseneken, G., Grasser, T. (2014).
Maximizing Reliable Performance of Advanced CMOS Circuits-A Case Study.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 2D.4.1–2D.4.6), Phoenix. (reposiTUm)

1508.   Rudolf, F., Wimmer, Y., Weinbub, J., Rupp, K., Selberherr, S. (2014).
Mesh Generation Using Dynamic Sizing Functions.
In Proc. 4th European Seminar on Computing (p. 191), Pilsen, Czech Republic. (reposiTUm)

1507.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer.
In Book of Abstracts (p. 166), Vienna, Austria. (reposiTUm)

1506.   Rott, G., Rott, K., Reisinger, H., Gustin, W., Grasser, T. (2014).
Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 Nm Technology P-Channel Transistors.
In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 40), Maastricht. (reposiTUm)

1505.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain.
In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1504.   Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2014).
Modeling Silicon Spintronics.
In Abstracts 2014 (p. 78), Saint-Petersburg, Russia. (reposiTUm)

1503.   Makarov, A., Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices.
In Book of Abstracts (p. 1), Phoenix, USA. (reposiTUm)

1502.   Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices, About Voids in Copper Interconnects.
ISEE Academic Lecture, Hangzhou, China. (reposiTUm)

1501.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling of Spin-Based Silicon Technology.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813891 (reposiTUm)

1500.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices.
In 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, Beograd. https://doi.org/10.1109/miel.2014.6842081 (reposiTUm)

1499.   Giering, K., Sohrmann, C., Rzepa, G., Heis, L., Grasser, T., Jancke, R. (2014).
NBTI Modeling in Analog Circuits and Its Application to Long-Term Aging Simulations.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049501 (reposiTUm)

1498.   Dimov, I., Nedjalkov, M., Sellier, J., Selberherr, S. (2014).
Neumann Series Analysis of the Wigner Equation Solution.
In Abstracts of The 18th European Conference on Mathematics for Industry (p. 459), Taormina, Italy. (reposiTUm)

1497.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
New Design of Spin-Torque Nano-Oscillators.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 63), Kona. (reposiTUm)

1496.   Tyaginov, S., Bina, M., Franco, J., Kaczer, B., Grasser, T. (2014).
On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation.
In Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM) (pp. 858–859), Fukuoka, Japan. (reposiTUm)

1495.   de Orio, R., Gousseau, S., Moreau, S., Cerice, H., Selberherr, S., Farcy, A., Bay, F., Inal, K., Montmitonnet, P. (2014).
On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049523 (reposiTUm)

1494.   Grasser, T., Goes, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas'ev, V., Stesmans, A., El-Sayed, A., Shluger, A. (2014).
On the Microscopic Structure of Hole Traps in pMOSFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047093 (reposiTUm)

1493.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931593 (reposiTUm)

1492.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method.
In Eighth International Conference on Numerical Methods and Applications (p. 19), Borovets, Bulgaria. (reposiTUm)

1491.   Rupp, K., Tillet, P., Rudolf, F., Weinbub, J., Grasser, T., Jüngel, A. (2014).
Performance Portability Study of Linear Algebra Kernels in OpenCL.
In Proceedings of the International Workshop on OpenCL 2013 & 2014 - IWOCL '14, Bristol, UK. https://doi.org/10.1145/2664666.2664674 (reposiTUm)

1490.   Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T. (2014).
Physical Modeling of Hot-Carrier Degradation for Short- And Long-Channel MOSFETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT16.1–XT16.8), Phoenix. (reposiTUm)

1489.   Rzepa, G., Goes, W., Rott, G., Rott, K., Karner, M., Kernstock, C., Kaczer, B., Reisinger, H., Grasser, T. (2014).
Physical Modeling of NBTI: From Individual Defects to Devices.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931568 (reposiTUm)

1488.   Wimmer, Y., Tyaginov, S., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Minixhofer, R., Ceric, H., Grasser, T. (2014).
Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049511 (reposiTUm)

1487.   Filipovic, L., Orio, R., Selberherr, S. (2014).
Process and Performance of Copper TSVs.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

1486.   Filipovic, L., de Orio, R., Selberherr, S. (2014).
Process and Reliability of SF<inf>6</inf>/O<inf>2</inf> Plasma Etched Copper TSVs.
In 2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium. https://doi.org/10.1109/eurosime.2014.6813768 (reposiTUm)

1485.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 62), Kona. (reposiTUm)

1484.   Ceric, H., Zisser, W., Selberherr, S. (2014).
Quantum Mechanical Calculations of Electromigration Characteristics.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 16), Kyoto, Japan. (reposiTUm)

1483.   Franco, J., Kaczer, B., Waldron, N., Roussel, P., Alian, A., Pourghaderi, M., Ji, Z., Grasser, T., Kauerauf, T., Sioncke, S., Collaert, N., Thean, A., Groeseneken, G. (2014).
RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-K InGaAs FinFETs.
In 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2014.7047087 (reposiTUm)

1482.   Vexler, M., Illarionov, Y., Tyaginov, S., Sokolov, N., Fedorov, V., Grasser, T. (2014).
Simulation of the Electrical Characteristics of the Devices With Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT.
In Materials of XIII International conference DIELECTRICS (pp. 159–162), St-Petersburg, Russia. (reposiTUm)

1481.   Wang, Y., Baboulin, M., Rupp, K., Le Maitre, O. (2014).
Solving 3D Incompressible Navier-Stokes Equations on Hybrid CPU/GPU Systems.
In HPC '14 Proceedings of the High Performance Computing Symposium (pp. 1–8), Orlando, FL, USA. (reposiTUm)

1480.   Sverdlov, V., Osintsev, D., Selberherr, S. (2014).
Spin Behaviour in Strained Silicon Films.
In Abstracts of E-MRS Fall Meeting (p. 1), Warsaw, Poland. (reposiTUm)

1479.   Ghosh, J., Sverdlov, V., Selberherr, S. (2014).
Spin Diffusion and the Role of Screening Effects in Semiconductors.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865825 (reposiTUm)

1478.   Ghosh, J., Sverdlov, V., Selberherr, S. (2014).
Spin Diffusion in Silicon From a Ferromagnetic Contact.
In Book of Abstracts (p. 165), Vienna, Austria. (reposiTUm)

1477.   Ghosh, J., Sverdlov, V., Selberherr, S. (2014).
Spin Injection in Silicon: The Role of Screening Effects.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 63–64), Urbana-Champaign, IL, USA. (reposiTUm)

1476.   Sverdlov, V., Osintsev, D., Selberherr, S. (2014).
Spin Lifetime in Strained Silicon Films.
In 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 (pp. 57–58), Singapore, Singapore. https://doi.org/10.1109/ISTDM.2014.6874695 (reposiTUm)

1475.   Touski, S., Chaghazardi, Z., Pourfath, M., Moradinasab, M., Faez, R., Kosina, H. (2014).
Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 101–102), Urbana-Champaign, IL, USA. (reposiTUm)

1474.   Filipovic, L., Selberherr, S. (2014).
Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes.
In 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Peking, Austria. https://doi.org/10.1109/icsict.2014.7021507 (reposiTUm)

1473.   Schwaha, P., Nedjalkov, M., Selberherr, S., Sellier, J., Dimov, I., Georgieva, R. (2014).
Stochastic Formulation of Newton’s Acceleration.
In Large-Scale Scientific Computing: 9th International Conference, LSSC 2013 (pp. 178–185), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-662-43880-0_19 (reposiTUm)

1472.   Papaleo, S., Zisser, W., Singulani, A., Ceric, H., Selberherr, S. (2014).
Stress Analysis in Open TSVs After Nanoindentation.
In Abstracts (pp. 39–40), Thun, Switzerland. (reposiTUm)

1471.   Filipovic, L., Selberherr, S. (2014).
Stress Considerations for System-On-Chip Gas Sensor Integration in CMOS Technology.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 41), Kyoto, Japan. (reposiTUm)

1470.   Zisser, W., Ceric, H., Selberherr, S. (2014).
Stress Development and Void Evolution in Open TSVs.
In Abstracts (pp. 38–39), Thun, Switzerland. (reposiTUm)

1469.   Papaleo, S., Zisser, W., Singulani, A., Ceric, H., Selberherr, S. (2014).
Stress Evolution During the Nanoindentation in Open TSVs.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 44), Kyoto, Japan. (reposiTUm)

1468.   Sverdlov, V., Makarov, A., Selberherr, S. (2014).
Structural Optimization of MTJs for STT-MRAM and Oscillator Applications.
In Abstracts: 2014 CMOS Emerging Technologies Research Symposium (p. 19), Whistler, BC, Canada. (reposiTUm)

1467.   Bury, E., Degraeve, R., Cho, M., Kaczer, B., Gös, W., Grasser, T., Horiguchi, N., Groeseneken, G. (2014).
Study of (Correlated) Trap Sites in SILC, BTI and RTN in SiON and HKMG Devices.
In Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 254–257), Singapore. (reposiTUm)

1466.   Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S. (2014).
Template-Based Mesh Generation for Semiconductor Devices.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931602 (reposiTUm)

1465.   Filipovic, L., Selberherr, S. (2014).
The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias.
In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 36), Maastricht. (reposiTUm)

1464.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2014).
The Multi-Dimensional Transient Challenge: The Wigner Particle Approach.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 119–120), Urbana-Champaign, IL, USA. (reposiTUm)

1463.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2014).
The Role of Annihilation in a Wigner Monte Carlo Approach.
In Large-Scale Scientific Computing: 9th International Conference, LSSC 2013 (pp. 186–193), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-662-43880-0_20 (reposiTUm)

1462.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931576 (reposiTUm)

1461.   Neophytou, N., Kosina, H. (2014).
Thermoelectric Properties of Gated Silicon Nanowires.
In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1460.   Neophytou, N., Kosina, H. (2014).
Thermoelectric Properties of Gated Si Nanowires.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 197–198), Urbana-Champaign, IL, USA. (reposiTUm)

1459.   Filipovic, L., Rudolf, F., Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Singulani, A., Minixhofer, R., Selberherr, S. (2014).
Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931633 (reposiTUm)

1458.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films.
In Book of Abstracts (p. 1), Washington, D.C., USA. (reposiTUm)

1457.   Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014).
Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures.
In Proceedings of International Winterschool on New Developments in Solid State Physics (pp. 88–89), Mauterndorf, Austria, Austria. (reposiTUm)

1456.   Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014).
Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 59–60), Urbana-Champaign, IL, USA. (reposiTUm)

1455.   Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014).
Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865824 (reposiTUm)

1454.   Zisser, W., Ceric, H., Selberherr, S. (2014).
Void Evolution in Open TSVs.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 58), Kyoto, Japan. (reposiTUm)

1453.   Goes, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T. (2013).
(Invited) Multiphonon Processes as the Origin of Reliability Issues.
In ECS Transactions (pp. 31–47), Honolulu, Austria. https://doi.org/10.1149/05807.0031ecst (reposiTUm)

1452.   Gös, W., Toledano-Luque, M., Baumgartner, O., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
A Comprehensive Model for Correlated Drain and Gate Current Fluctuations.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 46–47), Urbana-Champaign, IL, USA. (reposiTUm)

1451.   Rupp, K., Rudolf, F., Weinbub, J. (2013).
A Discussion of Selected Vienna-Libraries for Computational Science.
In Proceedings of C++Now (2013) (p. 10), Aspen, CO, USA. (reposiTUm)

1450.   Rupp, K., Tillet, P., Smith, B., Grasser, T., Jungel, A. (2013).
A Note on the GPU Acceleration of Eigenvalue Computations.
In AIP Proceedings, volume 1558 (pp. 1536–1539), Korfu, Griechenland. (reposiTUm)

1449.   Schanovsky, F., Baumgartner, O., Goes, W., Grasser, T. (2013).
A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650559 (reposiTUm)

1448.   Illarionov, Y., Tyaginov, S., Bina, M., Grasser, T. (2013).
A Method to Determine the Lateral Trap Position in Ultra-Scaled MOSFETs.
In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM) (pp. 728–729), Tsukuba, Austria. (reposiTUm)

1447.   Orio, R., Selberherr, S. (2013).
About Voids in Copper Interconnects.
In Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013) (p. 8), Suntec, Singapore. (reposiTUm)

1446.   Grasser, T., Rott, K., Reisinger, H., Wagner, P., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B. (2013).
Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

1445.   Schanovsky, F., Goes, W., Grasser, T. (2013).
Advanced Modeling of Charge Trapping at Oxide Defects.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650671 (reposiTUm)

1444.   Ceric, H., de Orio, R., Selberherr, S. (2013).
Analysis of Solder Bump Electromigration Reliability.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599258 (reposiTUm)

1443.   Strasser, G., Schwarz, B., Reininger, P., Baumgartner, O., Schrenk, W., Zederbauer, T., Detz, H., Andrews, A. M., Kosina, H. (2013).
Bi-Functional Quantum Cascade Laser/Detectors for Integrated Photonics.
ÖPG-Jahrestagung, Innsbruck, Austria, Austria. (reposiTUm)

1442.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer: Micromagnetic Modeling.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) (p. 2), Kaanapali. (reposiTUm)

1441.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films.
In Proceedings of the 21st International Symposium Nanostructures (pp. 69–70), St. Petersburg, Russian federation. (reposiTUm)

1440.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation.
In Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (pp. 135–136), Cardiff, Unided Kingdom, Austria. (reposiTUm)

1439.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In Abstracts Intl.Conf.on Information Engineering (ICIE) (p. 7), Hong Kong. (reposiTUm)

1438.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs.
In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013) (pp. 796–797), Tsukuba, Austria. (reposiTUm)

1437.   Coppeta, R., Ceric, H., Holec, D., Grasser, T. (2013).
Critical Thickness for GaN Thin Film on AlN Substrate.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 133–136), S. Lake Tahoe. (reposiTUm)

1436.   Weckx, P., Kaczer, B., Toledano-Luque, M., Grasser, T., Roussel, P., Kukner, H., Raghavan, P., Catthoor, F., Groeseneken, G. (2013).
Defect-Based Methodology for Workload-Dependent Circuit Lifetime Projections - Application to SRAM.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–7), Phoenix. (reposiTUm)

1435.   Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Bina, M., Grasser, T., Cho, M., Weckx, P., Groeseneken, G. (2013).
Degradation of Time Dependent Variability Due to Interface State Generation.
In 2013 Symposium on VLSI Technology (VLSIT) (pp. 190–191), Kyoto, Japan. (reposiTUm)

1434.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Design and Applications of Magnetic Tunnel Junction Based Logic Circuits.
In Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Villach, Austria. https://doi.org/10.1109/prime.2013.6603122 (reposiTUm)

1433.   Pobegen, G., Nelhiebel, M., Grasser, T. (2013).
Detrimental Impact of Hydrogen Passivation on NBTI and HC Degradation.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

1432.   Baumgartner, O., Bina, M., Goes, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T. (2013).
Direct Tunneling and Gate Current Fluctuations.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650563 (reposiTUm)

1431.   Rott, G., Nielen, H., Reisinger, H., Gustin, W., Tyaginov, S., Grasser, T. (2013).
Drift Compensating Effect During Hot-Carrier Degradation of 130nm Dual Gate Oxide P-Channel Transistors.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 73–77), S. Lake Tahoe. (reposiTUm)

1430.   Singulani, A., Ceric, H., Langer, E., Carniello, S. (2013).
Effects of Bosch Scallops on Metal Layer Stress of an Open Through Silicon via Technology.
In 2013 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2013.6532066 (reposiTUm)

1429.   Zisser, W., Ceric, H., de Orio, R., Selberherr, S. (2013).
Electromigration Analyses of Open TSVs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650620 (reposiTUm)

1428.   Ceric, H., Singulani, A., de Orio, R., Selberherr, S. (2013).
Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps.
In 2013 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe. https://doi.org/10.1109/iirw.2013.6804185 (reposiTUm)

1427.   Zisser, W., Ceric, H., de Orio, R., Selberherr, S. (2013).
Electromigration Induced Stress in Open TSVs.
In 2013 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe. https://doi.org/10.1109/iirw.2013.6804179 (reposiTUm)

1426.   Touski, S., Pourfath, M., Kosina, H. (2013).
Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 108–109), Urbana-Champaign, IL, USA. (reposiTUm)

1425.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films.
In Bulletin American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1424.   Coppeta, R., Ceric, H., Karunamurthy, B., Grasser, T. (2013).
Epitaxial Volmer-Weber Growth Modelling.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650570 (reposiTUm)

1423.   Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Wimmer, Y., Kaczer, B., Grasser, T. (2013).
Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 98–101), S. Lake Tahoe. (reposiTUm)

1422.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650618 (reposiTUm)

1421.   Kaczer, B., Afanas'ev, V., Rott, K., Cerbu, F., Franco, J., Goes, W., Grasser, T., Madia, O., Nguyen, A., Stesmans, A., Reisinger, H., Toledano-Luque, M., Weckx, P. (2013).
Experimental Characterization of BTI Defects.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650670 (reposiTUm)

1420.   Stanojevic, Z., Karner, M., Kosina, H. (2013).
Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain.
In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724618 (reposiTUm)

1419.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Fast Switching STT-MRAM Cells for Future Universal Memory.
In Abstracts Advanced Workshop on Frontiers in Electronics (WOFE) (p. 1), San Juan, Puerto Rico. (reposiTUm)

1418.   Neophytou, N., Stanojevic, Z., Kosina, H. (2013).
Full Band Calculations of Low-Field Mobility in P-Type Silicon Nanowire MOSFETs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650579 (reposiTUm)

1417.   Grasser, T. (2013).
Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales.
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1416.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs With a Shared Free Layer.
In Proceedings of the International Conference on Nanoscale Magnetism (p. 69), Istanbul, Turkey. (reposiTUm)

1415.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B. (2013).
Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI.
In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724637 (reposiTUm)

1414.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates.
In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 68–69), Kyiv, Ukraine. (reposiTUm)

1413.   Singulani, A., Ceric, H., Filipovic, L., Langer, E. (2013).
Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon via Technology.
In 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Poland. https://doi.org/10.1109/eurosime.2013.6529938 (reposiTUm)

1412.   Ceric, H., Singulani, A., de Orio, R., Selberherr, S. (2013).
Impact of Intermetallic Compound on Solder Bump Electromigration Reliability.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650577 (reposiTUm)

1411.   Weinbub, J., Rupp, K., Selberherr, S. (2013).
Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX.
In Abstracts 4th International Congress on Computational Engineering and Sciences (p. 1), Las Vegas, USA. (reposiTUm)

1410.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Influence of Surface Roughness Scattering on Spin Lifetime in Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 76–77), Urbana-Champaign, IL, USA. (reposiTUm)

1409.   Ghosh, J., Sverdlov, V., Selberherr, S. (2013).
Influence of a Space Charge Region on Spin Transport in Semiconductor.
In Abstracts International Semiconductor Device Research Symposium (ISDRS) (p. 27), College Park, MD, USA. (reposiTUm)

1408.   de Orio, R., Ceric, H., Selberherr, S. (2013).
Influence of Temperature on the Standard Deviation of Electromigration Lifetimes.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650617 (reposiTUm)

1407.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films.
In 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2013.6523525 (reposiTUm)

1406.   Harrer, A., Schwarz, B., Reininger, P., Gansch, R., Zederbauer, T., Andrews, A. M., Kalchmair, S., Schrenk, W., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2013).
Intersubband Detectors.
3rd International Nanophotonics Meeting 2013, Salzburg, Austria. (reposiTUm)

1405.   Neophytou, N., Karamitaheri, H., Kosina, H. (2013).
Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches From Atomistic Calculations for Electrons and Phonons.
In Book of Abstracts (p. 1), Kobe, Japan. (reposiTUm)

1404.   Neophytou, N., Stanojevic, Z., Kosina, H. (2013).
Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations.
In Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials (p. 142), Annecy, France. (reposiTUm)

1403.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
MRAM-based Logic Array for Large-Scale Non-Volatile Logic-In-Memory Applications.
In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623033 (reposiTUm)

1402.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Magnetic Oscillation of the Transverse Domain Wall in a Penta-Layer MgO-MTJ.
In Proceedings of the 21st International Symposium Nanostructures (pp. 338–339), St. Petersburg, Russian federation. (reposiTUm)

1401.   Schrems, M., Schrank, C., Siegert, J., Kraft, J., Teva, J., Selberherr, S. (2013).
Metrology Requirements for Manufacturing 3D Integrated ICs.
In Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN) (pp. 137–139), Gaithersburg, USA. (reposiTUm)

1400.   Sverdlov, V., Mahmoudi, H., Makarov, A., Osintsev, D., Weinbub, J., Windbacher, T., Selberherr, S. (2013).
Modeling Spin-Based Devices in Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 70–71), Urbana-Champaign, IL, USA. (reposiTUm)

1399.   Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F. (2013).
Modeling Spray Pyrolysis Deposition.
In Proceedings of the World Congress on Engineering (WCE) Vol II (pp. 987–992), London, UK. (reposiTUm)

1398.   Stanojevic, Z., Kosina, H. (2013).
Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures.
In The 2013 Silicon Nanoelectronics Workshop (SNW) (pp. 93–94), Honolulu. (reposiTUm)

1397.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures.
In Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies (pp. 48–51), High Tatras, Spa Novy Smokovec, Slovakia. (reposiTUm)

1396.   Filipovic, L., Baumgartner, O., Kosina, H. (2013).
Modeling Direct Band-To-Band Tunneling Using QTBM.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650612 (reposiTUm)

1395.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2013).
Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 86–87), Urbana-Champaign, IL, USA. (reposiTUm)

1394.   Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W. (2013).
Modeling the Growth of Thin SnO2 Films Using Spray Pyrolysis Deposition.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650611 (reposiTUm)

1393.   Schwarz, B., Reininger, P., Schrenk, W., Detz, H., Baumgartner, O., Zederbauer, T., Andrews, A. M., Kosina, H., Strasser, G. (2013).
Monolithically Integrated Quantum Cascade Laser and Detector.
CLEO Europe 2013, Munich, EU. (reposiTUm)

1392.   Wolf, S., Neophytou, N., Stanojevic, Z. (2013).
Monte Carlo Simulations of Thermal Conductivity Nanoporous Si Membranes.
In Book of Abstracts (pp. 1–4), Nancy, Austria. (reposiTUm)

1391.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator.
In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 456–457), San Jose, CA, USA. (reposiTUm)

1390.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel MTJ-based Shift Register for Non-Volatile Logic Applications.
In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623038 (reposiTUm)

1389.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel Non-Volatile Magnetic Flip Flop.
In In Proceedings of Seventh International School on Spintronics and Quantum Information Technology (p. 1), Cracow. (reposiTUm)

1388.   Rupp, K., Smith, B. (2013).
On Level Scheduling for Incomplete LU Factorization Preconditioners on Accelerators.
In Abstracts 4th International Congress on Computational Engineering and Sciences (p. 1), Las Vegas, USA. (reposiTUm)

1387.   Schwarz, B., Reininger, P., Ristanic, D., Baumgartner, O., Detz, H., Zederbauer, T., MacFarland, D., Andrews, A. M., Schrenk, W., Kosina, H., Strasser, G. (2013).
On-Chip Mid-Infrared Light Generation and Detection.
ITQW, Badesi, Italy, EU. (reposiTUm)

1386.   Illarionov, Y., Vexler, M., Fedorov, V., Suturin, S., Isakov, D., Grekhov, I. (2013).
Optical Characterization of the Injection Properties of MIS Structures With Thin CaF2 and HfO2/SiO2 Insulating Layers on Silicon.
In Abstracts of XI Russian Conference on Semiconductor Physics (p. 229), St-Petersburg, Russia. (reposiTUm)

1385.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 244–245), Urbana-Champaign, IL, USA. (reposiTUm)

1384.   Narducci, D., Lorenzi, B., Tonini, R., Frabboni, S., Gazzadi, G., Ottaviani, G., Neophytou, N., Zianni, X. (2013).
Paradoxical Enhancement of the Power Factor in Polycrystalline Silicon Due to the Formation of Nanovoids.
In Book of Abstracts (p. 52), Nancy, Austria. (reposiTUm)

1383.   Moradinasab, M., Pourfath, M., Baumgartner, O., Kosina, H. (2013).
Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers.
The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA, Non-EU. (reposiTUm)

1382.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Performance Analysis and Comparison of Two 1t/1mtj-Based Logic Gates.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650600 (reposiTUm)

1381.   Rupp, K., Tillet, P. (2013).
Performance-Portable Kernels in OpenCL: Lessons Learned.
BLIS Retreat, Austin, USA, Non-EU. (reposiTUm)

1380.   Orio, R., Selberherr, S. (2013).
Physically Based Models of Electromigration.
In Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC) (pp. 1–2), Hong Kong, Austria. (reposiTUm)

1379.   Amoroso, S., Gerrer, L., Asenov, A., Sellier, J., Dimov, I., Nedjalkov, M., Selberherr, S. (2013).
Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650565 (reposiTUm)

1378.   Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., Kaczer, B. (2013).
Recent Advances in Understanding Oxide Traps in pMOS Transistors.
In Proceedings of 2013 IWDTF (pp. 95–96), Tokyo, Japan. (reposiTUm)

1377.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films.
In 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2013.6818886 (reposiTUm)

1376.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P., Grasser, T. (2013).
Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

1375.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach.
In Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (p. 1), Granadea, Spanien, Austria. (reposiTUm)

1374.   Franco, J., Kaczer, B., Roussel, P., Toledano-Luque, M., Weckx, P., Grasser, T. (2013).
Relevance of Non-Exponential Single-Defect-Induced Threshold Voltage Shifts for NBTI Variability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 69–72), S. Lake Tahoe. (reposiTUm)

1373.   Kaczer, B., Chen, C., Watt, J., Chanda, K., Weckx, P., Toledano-Luque, M., Groeseneken, G., Grasser, T. (2013).
Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 94–97), S. Lake Tahoe. (reposiTUm)

1372.   Weinbub, J. (2013).
Research Software Engineering.
SPOMECH Autumn School, Ostrava, Czech Republic, EU. (reposiTUm)

1371.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650651 (reposiTUm)

1370.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration.
In Proceedings of the International Conference on Nanoscale Magnetism (p. 208), Istanbul, Turkey. (reposiTUm)

1369.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-In-Memory Applications.
In Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013) (p. 1), Whistler, BC, Canada. (reposiTUm)

1368.   Schwarz, B., Reininger, P., Detz, H., Zederbauer, T., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2013).
Same-Frequency Detector and Laser Utilizing Bi-Functional Quantum Cascade Active Regions.
SPIE Photonics West, San Jose Convention Center, San Jose, California, USA, Non-EU. (reposiTUm)

1367.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs.
In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 64–65), Kyiv, Ukraine. (reposiTUm)

1366.   Sverdlov, V., Selberherr, S. (2013).
Silicon Spintronics and Its Applications.
In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 51–52), Kyiv, Ukraine. (reposiTUm)

1365.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2013).
Simulation of Magnetic Oscillations in a System of Two MTJs With a Shared Free Layer.
In Abstracts Book of The 21st International Conference on Soft Magnetic Materials (p. 101), Turin, Italy. (reposiTUm)

1364.   Moradinasab, M., Pourfath, M., Kosina, H. (2013).
Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects.
In Book of Abstracts (p. 250), Delft, Netherlands. (reposiTUm)

1363.   Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Spin Injection and Diffusion in Silicon Based Devices From a Space Charge Layer.
In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 713–714), San Jose, CA, USA. (reposiTUm)

1362.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films.
In 223th ECS Meeting (p. 1), Montreal. (reposiTUm)

1361.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Spin Lifetime Enhancement in Strained Thin Silicon Films.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) (p. 2), Kaanapali. (reposiTUm)

1360.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I., Georgieva, R. (2013).
Stochastic Alternative to Newton's Acceleration.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 77–78), Sozopol, Bulgaria. (reposiTUm)

1359.   Singulani, A. P., Ceric, H., Selberherr, S. (2013).
Stress Evolution in the Metal Layers of TSVs With Bosch Scallops.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

1358.   Singulani, A., Ceric, H., Selberherr, S. (2013).
Stress Estimation in Open Tungsten TSV.
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1357.   Singulani, A., Ceric, H., Langer, E. (2013).
Stress Evolution on Tungsten Thin-Film of an Open Through Silicon via Technology.
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1356.   Singulani, A., Ceric, H., Langer, E. (2013).
Stress Reduction Induced by Bosch Scallops on an Open TSV Technology.
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1355.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Structural Optimization of MTJs With a Composite Free Layer.
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1354.   Stanojevic, Z., Kosina, H. (2013).
Surface-Roughness-Scattering in Non-Planar Channels — The Role of Band Anisotropy.
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1353.   Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Switching Optimization of an Electrically Read- And Writable Magnetic Logic Gate.
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1352.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2013).
The Role of Annihilation in a Wigner Monte Carlo Approach.
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1351.   Schwaha, P., Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2013).
The Ultimate Equivalence Between Coherent Quantum and Classical Regimes.
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1350.   Karamitaheri, H., Neophytou, N., Kosina, H. (2013).
Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions.
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1349.   Karamitaheri, H., Neophytou, N., Kosina, H. (2013).
Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions.
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1348.   Neophytou, N., Kosina, H. (2013).
Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures.
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1347.   Schwarz, B., Reininger, P., Baumgartner, O., Zederbauer, T., Detz, H., Andrews, A. M., Schrenk, W., Kosina, H., Strasser, G. (2013).
Towards Mid-Infrared On-Chip Sensing Utilizing a Bi-Functional Quantum Cascade Laser/Detector.
Conference on Electronic Properties of Two-Dimensional Systems / Modulated Semiconductor Structures (EP2Ds-MSS), Wroclaw, Polen, EU. (reposiTUm)

1346.   Tillet, P., Rupp, K., Selberherr, S., Lin, C. (2013).
Towards Performance-Portable, Scalable, and Convenient Linear Algebra.
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1345.   Reininger, P., Schwarz, B., Wirthmüller, A., Harrer, A., Baumgartner, O., Detz, H., Zederbauer, T., MacFarland, D., Andrews, A. M., Schrenk, W., Hvozdara, L., Kosina, H., Strasser, G. (2013).
Towards Higher Temperature Operation of Quantum Cascade Detectors.
ITQW, Badesi, Italy, EU. (reposiTUm)

1344.   Kareva, G., Vexler, M., Illarionov, Y. (2013).
Transformation of a Metal-Insulator-Silicon Structure Into a Resonant-Tunneling Diode.
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1343.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM.
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1342.   Vexler, M., Illarionov, Y., Suturin, S., Fedorov, V., Sokolov, N. (2013).
Tunnel Charge Transport in Au/CaF2/Si(111) System.
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1341.   Tyaginov, S., Osintsev, D., Illarionov, Y., Park, J., Enichlmair, H., Vexler, M., Grasser, T. (2013).
Tunnelling of Strongly Non-Equilibrium Carriers in the Transistors of Traditional Configuration.
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1340.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2013).
Two-Dimensional Transient Wigner Particle Model.
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1339.   Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
Understanding Correlated Drain and Gate Current Fluctuations.
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1338.   Franco, J., Kaczer, B., Roussel, P., Mitard, J., Sioncke, S., Witters, L., Mertens, H., Grasser, T., Groeseneken, G. (2013).
Understanding the Suppressed Charge Trapping in Relaxed- And Strained-Ge/SiO<inf>2</Inf>/HfO<inf>2</Inf> pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks.
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1337.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Using Strain to Increase the Reliability of Scaled Spin MOSFETs.
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1336.   Stanojevic, Z., Baumgartner, O., Schnass, K., Karner, M., Kosina, H. (2013).
VSP - A Quantum Simulator for Engineering Applications.
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1335.   Rupp, K., Tillet, P., Rudolf, F., Weinbub, J. (2013).
ViennaCL - Portable High Performance at High Convenience.
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1334.   Rupp, K. (2013).
ViennaCL: GPU-accelerated Linear Algebra at the Convenience of the C++ Boost Libraries.
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1333.   Rudolf, F., Rupp, K., Selberherr, S. (2013).
ViennaMesh - A Highly Flexible Meshing Framework.
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1332.   Wagner, M., Rupp, K., Weinbub, J. (2012).
A Comparison of Algebraic Multigrid Preconditioners Using Graphics Processing Units and Multi-Core Central Processing Units.
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1331.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
A Flexible Execution Framework for High-Performance TCAD Applications.
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1330.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing.
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1329.   Weinbub, J. (2012).
A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing.
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1328.   Filipovic, L., Selberherr, S. (2012).
A Monte Carlo Simulator for Non-Contact Mode Atomic Force Microscopy.
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1327.   Palankovski, V., Kuzmik, J. (2012).
A Promising New N++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications.
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1326.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration.
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1325.   Semenov, A., Dedyk, A., Belavsky, P., Pavlova, Y., Karmanenko, S., Pakhomov, O., Starkov, A., Starkov, I. (2012).
A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions.
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1324.   Nematian, H., Moradinasab, M., Noei, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes.
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1323.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
A Mid-Infrared Dual Wavelenght Quantum Cascade Structure Designed for Both Emission and Detection.
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1322.   Stanojevic, Z., Baumgartner, O., Kosina, H. (2012).
A Stable Discretization Method for "Dirac-Like" Effective Hamiltonians.
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1321.   Ceric, H., De Orio, R., Zisser, W., Selberherr, S. (2012).
Ab Initio Method for Electromigration Analysis.
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1320.   Starkov, A., Pakhomov, O., Starkov, I. (2012).
Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling.
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1319.   Waltl, M., Wagner, P., Reisinger, H., Rott, K., Grasser, T. (2012).
Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI.
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1318.   Grasser, T. (2012).
Aging in CMOS Devices: From Microscopic Physics to Compact Models.
The 2012 Forum on Specification, Design Languages, Vienna, Austria, Austria. (reposiTUm)

1317.   Tillet, P., Rupp, K., Selberherr, S. (2012).
An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations.
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1316.   de Orio, R., Ceric, H., Selberherr, S. (2012).
Analysis of Resistance Change Development Due to Voiding in Copper Interconnects Ended by a Through Silicon Via.
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1315.   Starkov, I., Enichlmair, H., Tyaginov, S., Grasser, T. (2012).
Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage N-MOSFETs Due to Hot-Carrier Stress.
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1314.   Neophytou, N., Karamitaheri, H., Kosina, H. (2012).
Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications.
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1313.   Ceric, H., Orio, R., Selberherr, S. (2012).
Atomistic Method for Analysis of Electromigration.
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1312.   Neophytou, N., Kosina, H. (2012).
Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects.
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1311.   Schanovsky, F., Grasser, T. (2012).
Bias Temperature Instabilities in Highly-Scaled MOSFETs.
2012 CMOS Emerging Technologies, Vancouver, BC Canada, Non-EU. (reposiTUm)

1310.   Rupp, K., Jungemann, C., Bina, M., Jüngel, A., Grasser, T. (2012).
Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation.
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1309.   Karamitaheri, H., Neophytou, N., Kosina, H. (2012).
Calculations of Confined Phonon Spectrum in Narrow Si Nanowires Using the Valence Force Field Method.
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1308.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs.
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1307.   Starkov, I., Enichlmair, H., Tyaginov, S., Grasser, T. (2012).
Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs.
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1306.   Toledano-Luque, M., Kaczer, B., Simoen, E., Degraeve, R., Franco, J., Roussel, P., Grasser, T., Groeseneken, G. (2012).
Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs.
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1305.   Palankovski, V., Kuzmik, J. (2012).
Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation.
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1304.   Weinbub, J. (2012).
Distributed High-Performance Parallel Mesh Generation With ViennaMesh.
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1303.   Starkov, A., Starkov, I. (2012).
Domain-Wall Motion for Slowly Varying Electric Field.
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1302.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Dual Wavelength Quantum Cascade Structure That Can Act Both as Laser and Detector.
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1301.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Dual-Color Quantum Cascade Structure for Coherent Emission and Detection.
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1300.   Moradinasab, M., Nematian, H., Noei, M., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study.
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1299.   Stanojevic, Z., Kosina, H. (2012).
Efficient Numerical Analysis of Dielectric Cavities.
European Semiconductor Laser Workshop (ESLW), Brussels, Belgium, EU. (reposiTUm)

1298.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins.
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1297.   Filipovic, L., Selberherr, S. (2012).
Electric Field Based Simulations of Local Oxidation Nanolithography Using Atomic Force Microscopy in a Level Set Environment.
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1296.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors.
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1295.   Orio, R., Ceric, H., Selberherr, S. (2012).
Electromigration Failure in a Copper Dual-Damascene Structure With a Through Silicon Via.
In Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1981–1986), Cagliari, Italy. (reposiTUm)

1294.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Electrothermal Analysis of In<inf>0.12</Inf>Al<inf>0.88</Inf>N/GaN HEMTs.
In The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, Smolenice Castle, Slovakia. https://doi.org/10.1109/asdam.2012.6418556 (reposiTUm)

1293.   Makarov, A., Selberherr, S., Sverdlov, V. (2012).
Emerging Non-Volatile Memories for Ultra-Low Power Applications.
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1292.   Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H. (2012).
Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons.
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1291.   Neophytou, N., Karamitaheri, H., Kosina, H. (2012).
Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling.
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1290.   Aichinger, T., Lenahan, P., Grasser, T., Pobegen, G., Nelhiebel, M. (2012).
Evidence for Pb Center-Hydrogen Complexes After Subjecting PMOS Devices to NBTI Stress - A Combined DCIV/SDR Study.
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1289.   Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Fast Switching in MTJs With a Composite Free Layer.
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1288.   de Orio, R., Selberherr, S. (2012).
Formation and Movement of Voids in Copper Interconnect Structures.
In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Peking, Austria. https://doi.org/10.1109/icsict.2012.6467675 (reposiTUm)

1287.   Windbacher, T., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Fully Electrically Read- Write Magneto Logic Gates.
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1286.   Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Molnar, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmik, J. (2012).
GaN/InAlN/AlN/GaN Normally-Off HEMT With Etched Access Region.
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1285.   Neophytou, N., Kosina, H. (2012).
Gate Field Induced Bandstructure and Mobility Variations in P-Type Silicon Nanowires.
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1284.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Geometry Dependence of the Switching Time in MTJs With a Composite Free Layer.
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1283.   Selberherr, S. (2012).
Giving Silicon a Spin.
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1282.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
High Thermal Stability and Low Switching Energy Barrier in Spin-Transfer Torque RAM With Composite Free Layer.
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1281.   Rupp, K., Weinbub, J., Rudolf, F. (2012).
Highly Productive Application Development With ViennaCL for Accelerators.
AGU 2012 Fall Meeting, San Francisco, CA, United States of America (the). (reposiTUm)

1280.   Karamitaheri, H., Pourfath, M., Kosina, H. (2012).
Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor.
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1279.   Rott, K., Schmitt-Landsiedel, D., Reisinger, H., Rott, G., Georgakos, G., Schluender, C., Aresu, S., Gustin, W., Grasser, T. (2012).
Impact and Measurement of Short Term Threshold Instabilities in MOSFETs of Analog Circuits.
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1278.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Mitard, J., Ragnarsson, L., Witters, L., Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Bukhori, M., Grasser, T., Asenov, A. (2012).
Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs.
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1277.   Tyaginov, S., Starkov, I., Triebl, O., Karner, M., Kernstock, C., Jungemann, C., Enichlmair, H., Park, J., Grasser, T. (2012).
Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation.
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1276.   Rupp, K., Lagger, P., Grasser, T. (2012).
Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation.
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1275.   Donnarumma, G., Palankovski, V., Selberherr, S. (2012).
Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4h-SiC P-I-N Diode.
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1274.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurements.
In Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012) (p. 1), Istanbul, Turkey. (reposiTUm)

1273.   Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G. (2012).
Large Silicon Solar Cells of a Lateral Type.
2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium, EU. (reposiTUm)

1272.   Starkov, I., Enichlmair, H., Grasser, T. (2012).
Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage N-Mosfet.
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1271.   Kosina, H., Neophytou, N. (2012).
Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation.
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1270.   Neophytou, N. (2012).
Low Dimensional Si Nanostructures for Efficient Thermoelectric Energy Conversion and Generation.
Workshop on Nanostructured Materials, Devices (NANOMED), Nicosia, Cyprus, EU. (reposiTUm)

1269.   Sverdlov, V., Selberherr, S. (2012).
MOSFET and Spin Transistor Simulations.
In Abstract of 2012 CMOS Emerging Technologies (p. 1), Vancouver, BC Canada. (reposiTUm)

1268.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems.
In 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2012.6343381 (reposiTUm)

1267.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
MTJs With a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242842 (reposiTUm)

1266.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Micromagnetic Simulations of an MTJ With a Composite Free Layer for High-Speed Spin Transfer Torque RAM.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 225–226), Urbana-Champaign, IL, USA. (reposiTUm)

1265.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Modeling Emerging Non-Volatile Memories: Current Trends and Challenges.
In Physics Procedia (pp. 99–104), Macao, China. https://doi.org/10.1016/j.phpro.2012.03.056 (reposiTUm)

1264.   Osintsev, D., Sverdlov, V., Selberherr, S. (2012).
Modeling Spintronic Effects in Silicon.
In Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH) (p. 3), Berlin, Germany. (reposiTUm)

1263.   Orio, R., Ceric, H., Selberherr, S. (2012).
Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects With Through Silicon Vias.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 268–271), Denver, Colorado, United States. (reposiTUm)

1262.   Tyaginov, S., Grasser, T. (2012).
Modeling of Hot-Carrier Degradation: Physics and Controversial Issues.
In IEEE International Integrated Reliability Workshop Final Report (pp. 206–215), California. (reposiTUm)

1261.   Ceric, H., Orio, R., Zisser, W., Schnitzer, V., Selberherr, S. (2012).
Modeling of Microstructural Effects on Electromigration Failure.
In Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics (pp. 50–51), Kyoto, Japan. (reposiTUm)

1260.   Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T. (2012).
Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation.
In 2012 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2012.6479138 (reposiTUm)

1259.   Grasser, T., Kaczer, B., Reisinger, H., Wagner, P., Toledano-Luque, M. (2012).
Modeling of the Bias Temperature Instability Under Dynamic Stress and Recovery Conditions.
In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Peking, Austria. https://doi.org/10.1109/icsict.2012.6466737 (reposiTUm)

1258.   Zianni, X., Neophytou, N., Ferri, M., Roncaglia, A., Narducci, D. (2012).
Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowiress.
In Book of Abstracts (p. 1), Aalborg, Denmark. (reposiTUm)

1257.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
New Trends in Microelectronics: Towards an Ultimate Memory Concept.
In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). https://doi.org/10.1109/iccdcs.2012.6188899 (reposiTUm)

1256.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
New Trends in Microelectronics: Towards an Ultimate Memory Concept.
In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen. https://doi.org/10.1109/iccdcs.2012.6188887 (reposiTUm)

1255.   Serrano-Lopez, I., Garcia-Barrientos, A., Palankovski, V., del Carmen Cruz-Netro, L. (2012).
Non-Stationary Effects of Space Charge in InN Films.
In XXI International Materials Research Congress (p. 1), Cancun, Mexico. (reposiTUm)

1254.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Novel Memristive Charge- And Flux-Based Sensors.
In Proceedings of the 8th Conference on Ph.D. Research in Microelectronics, Electronics (p. 4), Aachen, Germany. (reposiTUm)

1253.   Wagner, P., Kaczer, B., Scholten, A., Reisinger, H., Bychikhin, S., Pogany, D., Vandamme, L., Grasser, T. (2012).
On the Correlation Between NBTI, SILC, and Flicker Noise.
In IEEE International Integrated Reliability Workshop Final Report (pp. 60–64), California. (reposiTUm)

1252.   Grasser, T., Kaczer, B., Reisinger, H., Wagner, P., Toledano-Luque, M. (2012).
On the Frequency Dependence of the Bias Temperature Instability.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm)

1251.   Schanovsky, F., Grasser, T. (2012).
On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm)

1250.   Moradinasab, M., Karamitaheri, H., Pourfath, M., Kosina, H. (2012).
On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors.
In Book of Abstracts (p. 1), Delft, Netherlands. (reposiTUm)

1249.   Grasser, T., Reisinger, H., Rott, K., Toledano-Luque, M., Kaczer, B. (2012).
On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs.
In 2012 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2012.6479076 (reposiTUm)

1248.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Optimization of Intersubband Devices for Dual-Color Emission, Absorption and Detection.
ÖPG-Jahrestagung, Innsbruck, Austria, Austria. (reposiTUm)

1247.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2012).
Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242860 (reposiTUm)

1246.   Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D. (2012).
Phonon Decoherence in Wigner-Boltzmann Transport.
In Proceedings of International Winterschool on New Developments in Solid State Physics (pp. 61–62), Mauterndorf, Austria, Austria. (reposiTUm)

1245.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2012).
Phonon-Induced Decoherence in Electron Evolution.
In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 472–479), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_53 (reposiTUm)

1244.   Palankovski, V. (2012).
Photovoltaic and Thermoelectric Devices for Renewable Energy Harnessing.
Electronica, München, EU. (reposiTUm)

1243.   Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Cico, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmik, J. (2012).
Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT.
In International Workshop on Nitride Semiconductors (p. 2), Sapporo, Japan. (reposiTUm)

1242.   Starkov, A., Baranov, I., Pakhomov, O., Starkov, I., Zaitsev, A. (2012).
Principles of Solid-State Cooler on Layered Multiferroics.
In Conference guide, book of abstracts (p. 1), Grenoble, France. (reposiTUm)

1241.   Selberherr, S. (2012).
Recent Developments in Advanced Memory Modeling.
IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm)

1240.   Pobegen, G., Nelhiebel, M., Grasser, T. (2012).
Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability.
In 2012 IEEE International Integrated Reliability Workshop Final Report (pp. 54–59), California. (reposiTUm)

1239.   Rupp, K., Grasser, T., Jüngel, A. (2012).
Recent Advances in the Spherical Harmonics Expansion of the Boltzmann Transport Equation.
In Abstracts of Congresso Nationale Simai 2012 (p. 183), Turin, Italy. (reposiTUm)

1238.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Recent Developments in Advanced Memory Modeling.
In 2012 28th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2012.6222795 (reposiTUm)

1237.   Grasser, T. (2012).
Recent Developments in Understanding the Bias Temperature Instability.
In 2012 28th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2012.6222864 (reposiTUm)

1236.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 229–230), Urbana-Champaign, IL, USA. (reposiTUm)

1235.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242850 (reposiTUm)

1234.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Reduction of the Switching Current in Spin Transfer Torque Random Access Memory.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents (p. 49), Corsica, France. (reposiTUm)

1233.   Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Eneman, G., Roussel, P., Cho, M., Kauerauf, T., Grasser, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G. (2012).
Reliability of SiGe Channel MOS.
In ECS Meeting Abstracts (p. 1), Honolulu, USA. (reposiTUm)

1232.   Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D., Vasileska, D., Dollfus, P., Querlioz, D. (2012).
Role of the Physical Scales on the Transport Regime.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242848 (reposiTUm)

1231.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
STT-RAM With a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. H4), Sydney, Australia. (reposiTUm)

1230.   Reininger, P., Schwarz, B., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser.
International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. (reposiTUm)

1229.   Bina, M., Triebl, O., Schwarz, B., Karner, M., Kaczer, B., Grasser, T. (2012).
Simulation of Reliability on Nanoscale Devices.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 109–112), Denver, Colorado, United States. (reposiTUm)

1228.   Filipovic, L., Selberherr, S. (2012).
Simulation of Silicon Nanopatterning Using Nc-Afm.
In Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM) (p. 108), Cesky Krumlov. (reposiTUm)

1227.   Reininger, P., Schwarz, B., Kalchmair, S., Gansch, R., Baumgartner, O., Stanojevic, Z., Kosina, H., Schrenk, W., Strasser, G. (2012).
Simulation of a Dual Wavelength Quantum Cascade Laser in a Photonic Crystal Cavity.
International Quantum Cascade Lasers School, Workshop 2012 (IQCLSW 2012), Baden, Austria. (reposiTUm)

1226.   Filipovic, L., Selberherr, S. (2012).
Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 189–192), Denver, Colorado, United States. (reposiTUm)

1225.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. J3), Sydney, Australia. (reposiTUm)

1224.   Lukash, M., Rupp, K., Selberherr, S. (2012).
Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs.
In HPC '12 Proceedings of the 2012 Symposium on High Performance Computing (p. 7), Orlando, FL, USA. (reposiTUm)

1223.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Spintronic Stateful Logic Gates Using Magnetic Tunnel Junctions Written by Spin-Transfer Torque.
In Book of Abstracts (p. P-6), Eindhoven, the Netherlands. (reposiTUm)

1222.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
State Drift Optimization of Memristive Stateful IMP Logic Gates.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 243–244), Urbana-Champaign, IL, USA. (reposiTUm)

1221.   Osintsev, D., Stanojevic, Z., Baumgartner, O., Sverdlov, V., Selberherr, S. (2012).
Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs.
In AIP Conference Proceedings, Wien, Österreich, Austria. https://doi.org/10.1063/1.4848413 (reposiTUm)

1220.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Study of Self-Accelerating Switching in MTJs With Composite Free Layer by Micromagnetic Simulations.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 229–232), Denver, Colorado, United States. (reposiTUm)

1219.   Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Crupi, F., Eneman, G., Roussel, P., Grasser, T., Cho, M., Kauerauf, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G. (2012).
Superior Reliability and Reduced Time-Dependent Variability in High-Mobility SiGe Channel pMOSFETs for VLSI Logic Applications.
In Proceedings of IEEE International Conference on IC Design and Technology (pp. 1–4), Austin, TX, USA. (reposiTUm)

1218.   Osintsev, D., Sverdlov, V., Selberherr, S. (2012).
Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S) (p. 33), Kona. (reposiTUm)

1217.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. B3), Sydney, Australia. (reposiTUm)

1216.   Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Switching Energy Barrier and Current Reduction in MTJs With Composite Free Layer.
In Bulletin American Physical Society (APS March Meeting 2012) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1215.   Cervenka, J., Steinmair, A., Park, J., Seebacher, E., Grasser, T. (2012).
TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors.
In Proceedings of the 3rd European Workshop on CMOS Variability (p. 4), Nice, France. (reposiTUm)

1214.   Ceric, H., Orio, R., Selberherr, S. (2012).
TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 264–267), Denver, Colorado, United States. (reposiTUm)

1213.   Rupp, K. (2012).
The High-Level Linear Algebra Library ViennaCL and Its Applications.
In Abstracts of GPU Technology Conference (p. 77), San Jose, California, USA. (reposiTUm)

1212.   Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, P., Bukhori, M., Asenov, A., Schwarz, B., Bina, M., Grasser, T., Groeseneken, G. (2012).
The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm)

1211.   Dedyk, A., Pavlova, Y., Semenov, A., Pakhomov, O., Starkov, A., Starkov, I., Beliavskiy, P. (2012).
The Influence &Amp;#x201C;heating-Cooling&#x201D; Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures.
In Proceedings of ISAF-ECAPD-PFM 2012, Aveiro, Portugal. https://doi.org/10.1109/isaf.2012.6297838 (reposiTUm)

1210.   Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H. (2012).
Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors.
In ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

1209.   Karamitaheri, H., Pourfath, M., Neophytou, N., Kosina, H. (2012).
Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor.
In ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

1208.   Starkov, A., Starkov, I. (2012).
Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall.
In Proceedings of ISAF-ECAPD-PFM 2012, Aveiro, Portugal. https://doi.org/10.1109/isaf.2012.6297837 (reposiTUm)

1207.   Singulani, A., Ceric, H., Selberherr, S. (2012).
Thermo-Mechanical Simulations of an Open Tungsten TSV.
In 2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), Singapore. https://doi.org/10.1109/eptc.2012.6507061 (reposiTUm)

1206.   Starkov, A., Pakhomov, O., Starkov, I. (2012).
Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials.
In Abstract Booklet (p. 76), Catania. (reposiTUm)

1205.   Neophytou, N., Kosina, H. (2012).
Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 67–68), Urbana-Champaign, IL, USA. (reposiTUm)

1204.   Neophytou, N., Kosina, H. (2012).
Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures.
In Bulletin American Physical Society (APS March Meeting 2012) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1203.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
Towards Distributed Heterogenous High-Performance Computing With ViennaCL.
In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 359–367), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_41 (reposiTUm)

1202.   Weinbub, J., Rupp, K., Filipovic, L., Makarov, A., Selberherr, S. (2012).
Towards a Free Open Source Process and Device Simulation Framework.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242867 (reposiTUm)

1201.   Selberherr, S. (2012).
Transport Modeling for Nanoscale Semiconductor Devices.
IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm)

1200.   Osintsev, D., Sverdlov, V., Selberherr, S. (2012).
Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors With Thin Silicon Body.
In Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 77–78), Granadea, Spanien, Austria. (reposiTUm)

1199.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development.
In Proceedings of C++Now (2012) (p. 10), Aspen, CO, USA. (reposiTUm)

1198.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells.
In Book of Abstracts (p. P-27), Eindhoven, the Netherlands. (reposiTUm)

1197.   Orio, R., Ceric, H., Selberherr, S. (2011).
A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects.
22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, EU. (reposiTUm)

1196.   Rupp, K., Jüngel, A., Grasser, T. (2011).
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.
In Proceedings of Facing the Multicore Challenge II (p. 11), Karlsruhe, Germany. (reposiTUm)

1195.   Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S. (2011).
A Generic High-Quality Meshing Framework.
In Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM) (p. 1), Minneapolis, USA. (reposiTUm)

1194.   Filipovic, L., Selberherr, S. (2011).
A Level Set Simulator for Nanooxidation Using Non-Contact Atomic Force Microscopy.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035031 (reposiTUm)

1193.   Filipovic, L., Nedjalkov, M., Selberherr, S. (2011).
A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (pp. 42–43), Sozopol, Bulgaria. (reposiTUm)

1192.   Filipovic, L., Selberherr, S. (2011).
A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator.
In Abstracts IMACS Seminar on Monte Carlo Methods (MCM) (p. 30), Reading. (reposiTUm)

1191.   de Orio, R., Ceric, H., Selberherr, S. (2011).
A Compact Model for Early Electromigration Lifetime Estimation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035040 (reposiTUm)

1190.   Manavizadeh, N., Pourfath, M., Raissi, F., Asl-Soleimani, E. (2011).
A Comprehensive Study of Nanoscale Field Effect Diodes.
In 2011 12th Intl. Conf. on Thermal, Mechanical, Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (pp. 1/4–4/4), Linz, Austria. https://doi.org/10.1109/esime.2011.5765817 (reposiTUm)

1189.   Filipovic, L., Ceric, H., Cervenka, J., Selberherr, S. (2011).
A Simulator for Local Anodic Oxidation of Silicon Surfaces.
In 2011 24th Canadian Conference on Electrical and Computer Engineering(CCECE), Saskatoon, SK, Canada. https://doi.org/10.1109/ccece.2011.6030543 (reposiTUm)

1188.   Stanojevic, Z., Karner, M., Schnass, K., Kernstock, C., Baumgartner, O., Kosina, H. (2011).
A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035089 (reposiTUm)

1187.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
About the Switching Process in Magnetic Tunnel Junctions With Two Fixed Layers and One Soft Magnetic Layer.
In Abstracts Book of The 20th International Conference on Soft Magnetic Materials (p. 444), Turin, Italy. (reposiTUm)

1186.   Starkov, I., Tyaginov, S., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2011).
Accurate Extraction of MOSFET Interface State Spatial Distribution From Charge Pumping Measurements.
In GADEST 2011: Abstract Booklet (pp. 105–106), Loipersdorf, Austria, Austria. (reposiTUm)

1185.   Rupp, K., Grasser, T., Jüngel, A. (2011).
Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6034964 (reposiTUm)

1184.   Gös, W., Schanovsky, F., Grasser, T., Reisinger, H., Kaczer, B. (2011).
Advanced Modeling of Oxide Defects for Random Telegraph Noise.
In Proceedings of the 21st International Conference on Noise and Fluctuations (p. 4), Salamanca, Spanien, Austria. (reposiTUm)

1183.   Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, C., Park, J., Seebacher, E., Orio, R., Ceric, H., Grasser, T. (2011).
An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation.
In Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1525–1529), Bordeaux, France. (reposiTUm)

1182.   Starkov, I., Starkov, A., Tyaginov, S., Enichlmair, H., Ceric, H., Grasser, T. (2011).
An Analytical Model for MOSFET Local Oxide Capacitance.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

1181.   Osintsev, D., Makarov, A., Selberherr, S., Sverdlov, V. (2011).
An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

1180.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of ZGNR-Based Transistors.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

1179.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices.
In 219th ECS Meeting (p. 1), Montreal, Canada. (reposiTUm)

1178.   Starkov, I., Ceric, H., Tyaginov, S., Grasser, T. (2011).
Analysis of Worst-Case Hot-Carrier Conditions for N-Type MOSFET.
In 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics, Madonna di Campiglio, Italy. https://doi.org/10.1109/prime.2011.5966251 (reposiTUm)

1177.   Starkov, I., Ceric, H., Tyaginov, S., Grasser, T., Enichlmair, H., Park, J., Jungemann, C. (2011).
Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of N- And P-Channel High-Voltage MOSFETs.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035066 (reposiTUm)

1176.   Grasser, T., Wagner, P., Reisinger, H., Aichinger, T., Pobegen, G., Nelhiebel, M., Kaczer, B. (2011).
Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131624 (reposiTUm)

1175.   Kaczer, B., Mahato, S., Valduga de Almeida Camargo, V., Toledano-Luque, M., Roussel, P., Grasser, T., Catthoor, F., Dobrovolny, P., Zuber, P., Wirth, G., Groeseneken, G. (2011).
Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 5), Phoenix. (reposiTUm)

1174.   Neophytou, N., Kosina, H. (2011).
Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation.
In Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11) (p. 1), Plomarion, Greece. (reposiTUm)

1173.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Selberherr, S. (2011).
Ballistic Spin Field Effect Transistor Based on Silicon Nanowires.
In Bulletin American Physical Society (APS March Meeting 2011), Los Angeles/USA, Austria. (reposiTUm)

1172.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Ballistic Spin Field-Effect Transistors Built on Silicon Fins.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 59–60), Granada, Austria. (reposiTUm)

1171.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins.
In ECS Transactions (pp. 155–162), Ouro Preto. https://doi.org/10.1149/1.3615189 (reposiTUm)

1170.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs.
In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 229), Matsue, Japan. (reposiTUm)

1169.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport in Spin Field-Effect Transistors Built on Silicon.
In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

1168.   Gös, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011).
Bistable Defects as the Cause for NBTI and RTN.
In GADEST 2011: Abstract Booklet (p. 153), Loipersdorf, Austria, Austria. (reposiTUm)

1167.   Grasser, T. (2011).
Cause, Detection, and Impact of Charge Trapping on Aging.
VLSI Symposium Short Course, Kyoto, Japan, Non-EU. (reposiTUm)

1166.   Grasser, T. (2011).
Charge Trapping in Oxides From RTN to BTI.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 128), Phoenix. (reposiTUm)

1165.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H. (2011).
Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons.
In 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria, Austria. https://doi.org/10.1109/esime.2011.5765816 (reposiTUm)

1164.   de Orio, R., Selberherr, S. (2011).
Compact Modeling of Interconnect Reliability.
In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, Hong Kong, Austria. https://doi.org/10.1109/edssc.2011.6117564 (reposiTUm)

1163.   Neophytou, N., Kosina, H. (2011).
Confinement-Induced Mobility Increase in P-Type [110] and [111] Silicon Nanowires.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI) (p. 2), Granadea, Spanien, Austria. (reposiTUm)

1162.   Southwick III, R., Purnell, S., Rapp, B., Thompson, R., Pugmire, S., Kaczer, B., Grasser, T., Knowlton, B. (2011).
Cryogenic to Room Temperature Effects of NBTI in High-K PMOS Devices.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 12–16), California. (reposiTUm)

1161.   Weinbub, J., Rupp, K., Selberherr, S. (2011).
Distributed Heterogenous High-Performance Computing With ViennaCL.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (pp. 88–90), Sozopol, Bulgaria. (reposiTUm)

1160.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2011).
Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

1159.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2011).
Efficient Simulation of Quantum Cascade Lasers Using the Pauli Master Equation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035057 (reposiTUm)

1158.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Fast Switching in Magnetic Tunnel Junctions With Double Barrier Layer.
In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (p. 2), Nagoya, Japan. (reposiTUm)

1157.   Karamitaheri, H., Pourfath, M., Neophytou, N., Pazoki, M., Kosina, H. (2011).
First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications.
In Proceedings of the 2nd CARBOMAT Workshop (pp. 19–22), Catania, Italy. (reposiTUm)

1156.   Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Grasser, T., Hoffmann, T., Groeseneken, G. (2011).
From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation.
In 2011 Symposium on VLSI Technology Digest of Technical Papers (p. 2), Honolulu, Austria. (reposiTUm)

1155.   Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S. (2011).
High-Quality Mesh Generation Based on Orthogonal Software Modules.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035078 (reposiTUm)

1154.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications.
In 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria, Austria. https://doi.org/10.1109/esime.2011.5765811 (reposiTUm)

1153.   Pobegen, G., Aichinger, T., Grasser, T., Nelhiebel, M. (2011).
Impact of Gate Poly Doping and Oxide Thickness on the N- And PBTI in MOSFETs.
In Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1530–1534), Bordeaux, France. (reposiTUm)

1152.   Starkov, I., Ceric, H. (2011).
Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress.
In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (pp. 90–91), Nagoya, Japan. (reposiTUm)

1151.   Tyaginov, S., Starkov, I., Jungemann, C., Enichlmair, H., Park, J., Grasser, T. (2011).
Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 151–154), Montreux, Austria. (reposiTUm)

1150.   Poschalko, C., Selberherr, S. (2011).
Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities.
In Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility (p. 4), Beijing. (reposiTUm)

1149.   Ceric, H., de Orio, R., Selberherr, S. (2011).
Integration of Atomistic and Continuum-Level Electromigration Models.
In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2011.5992749 (reposiTUm)

1148.   Ceric, H., Orio, R., Selberherr, S. (2011).
Interconnect Reliability Dependence on Fast Diffusivity Paths.
In Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011) (p. 33), Suntec, Singapore. (reposiTUm)

1147.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions With a Composite Soft Layer.
In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

1146.   De Orio, R., Ceric, H., Selberherr, S. (2011).
Modeling Electromigration Lifetimes of Copper Interconnects.
In ECS Transactions (pp. 163–169), Ouro Preto. https://doi.org/10.1149/1.3615190 (reposiTUm)

1145.   Bina, M., Aichinger, T., Pobegen, G., Gös, W., Grasser, T. (2011).
Modeling of DCIV Recombination Currents Using a Multistate Multiphonon Model.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–31), California. (reposiTUm)

1144.   Grasser, T. (2011).
Modeling of Device Reliability.
Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland, EU. (reposiTUm)

1143.   Makarov, A., Sverdlov, V., Kryzhanovsky, D., Girkin, M., Selberherr, S. (2011).
Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems With the Monte-Carlo Method.
In Book of Abstracts: Parallel Computing Technologies (PaVT) (p. 1), Moscow, Russia. (reposiTUm)

1142.   Makarov, A., Selberherr, S., Sverdlov, V. (2011).
Modeling of Advanced Memories.
In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, Hong Kong, Austria. https://doi.org/10.1109/edssc.2011.6117568 (reposiTUm)

1141.   Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., Selberherr, S. (2011).
Modeling of the Advanced Spin Transfer Torque Memory: Macro- And Micromagnetic Simulations.
In Proceedings of the 25th European Simulation and Modelling Conference (pp. 177–181), Guimaraes, Portugal. (reposiTUm)

1140.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions.
In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 238), Matsue, Japan. (reposiTUm)

1139.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2011).
Monte Carlo Investigations of Electron Decoherence Due to Phonons.
In Abstracts IMACS Seminar on Monte Carlo Methods (MCM) (p. 48), Reading. (reposiTUm)

1138.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2011).
Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers.
In Abstracts IMACS Seminar on Monte Carlo Methods (MCM) (p. 21), Reading. (reposiTUm)

1137.   Milovanovic, G., Baumgartner, O., Nobile, M., Detz, H., Andrews, A. M., Strasser, G., Kosina, H. (2011).
Monte Carlo Simulation of an Al-Free Quantum Cascade Laser.
MIRTHE-IROn-SensorCAT virtual conference, Princenton, Non-EU. (reposiTUm)

1136.   Schanovsky, F., Baumgartner, O., Grasser, T. (2011).
Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035038 (reposiTUm)

1135.   Ceric, H., de Orio, R., Schanovsky, F., Zisser, W., Selberherr, S. (2011).
Multilevel Simulation for the Investigation of Fast Diffusivity Paths.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035068 (reposiTUm)

1134.   Vitanov, S., Kuzmik, J., Palankovski, V. (2011).
Normally-Off InAlN/GaN HEMTs With N<sup>&#x002B;&#x002B;</Sup> GaN Cap Layer: A Simulation Study.
In 2011 International Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA. https://doi.org/10.1109/isdrs.2011.6135161 (reposiTUm)

1133.   Schanovsky, F., Grasser, T. (2011).
On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 17–21), California. (reposiTUm)

1132.   Rupp, K., Grasser, T., Jüngel, A. (2011).
On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131667 (reposiTUm)

1131.   Franco, J., Kaczer, B., Eneman, G., Roussel, P., Cho, M., Mitard, J., Witters, L., Hoffmann, T., Groeseneken, G., Crupi, F., Grasser, T. (2011).
On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and Their Implications in Si<inf>0.45</Inf>Ge<inf>0.55</Inf> pMOSFETs.
In 2011 International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2011.5784545 (reposiTUm)

1130.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

1129.   Grasser, T. (2011).
Oxide Defects: From Microscopic Physics to Compact Models.
SISPAD Workshop, Nürnberg, Germany, EU. (reposiTUm)

1128.   Rupp, K., Grasser, T., Jüngel, A. (2011).
Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6034963 (reposiTUm)

1127.   Filipovic, L., Ertl, O., Selberherr, S. (2011).
Parallelization Strategy for Hierarchical Run Length Encoded Data Structures.
In Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011) (pp. 131–138), Innsbruck. (reposiTUm)

1126.   Aloise, G., Vitanov, S., Palankovski, V. (2011).
Performance Study of Nitride-Based Gunn Diodes.
In Technical Proceedings of the 2011 NSTI Nanotechnology Conference, Expo - Nanotech 2011 (p. 4), Boston, USA. (reposiTUm)

1125.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2011).
Phonon-Induced Decoherence in Electron Evolution.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (pp. 74–75), Sozopol, Bulgaria. (reposiTUm)

1124.   Starkov, A., Pakhomov, O., Starkov, I. (2011).
Physical Model for Ferroelectrics Based on Pyrocurrent Consideration.
12th European Meeting on Ferroelectricity, Bordeaux, France, EU. (reposiTUm)

1123.   Tyaginov, S., Starkov, I., Enichlmair, H., Park, J., Jungemann, C., Grasser, T. (2011).
Physics-Based Hot-Carrier Degradation Modeling.
In Meet. Abstr. - Electrochem. Soc. 2011", (2011) (p. 1), Montreal, Canada. (reposiTUm)

1122.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

1121.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035049 (reposiTUm)

1120.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011).
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors.
In Meeting Abstracts (p. 1), Honolulu, Austria. (reposiTUm)

1119.   Pourfath, M. (2011).
Quantum Transport in Graphene-Based Devices: A Computational Study.
17th Annual IASBS Meeting on Condensed Matter Physics, Zanjan, Iran, Non-EU. (reposiTUm)

1118.   Hehenberger, P., Goes, W., Baumgartner, O., Franco, J., Kaczer, B., Grasser, T. (2011).
Quantum-Mechanical Modeling of NBTI in High-K SiGe MOSFETs.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035036 (reposiTUm)

1117.   Kaczer, B., Toledano-Luque, M., Franco, J., Grasser, T., Roussel, P., Camargo, V., Mahato, S., Simoen, E., Catthoor, F., Wirth, G., Groeseneken, G. (2011).
Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (p. 32), California. (reposiTUm)

1116.   Toledano-Luque, M., Kaczer, B., Roussel, P., Grasser, T., Wirth, G., Franco, J., Vrancken, C., Horiguchi, N., Groeseneken, G. (2011).
Response of a Single Trap to AC Negative Bias Temperature Stress.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 8), Phoenix. (reposiTUm)

1115.   Tyaginov, S., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Park, J., Jungemann, C. (2011).
Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage N-Mosfet.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035065 (reposiTUm)

1114.   Kosina, H. (2011).
Semiconductor Device Modeling: The Last 30 Years.
In Abstracts of the Invited Presentations (p. 9), Vienna, Austria, Austria. (reposiTUm)

1113.   Starkov, A., Pakhomov, O., Starkov, I. (2011).
Solid-State Cooler - New Opportunities.
12th European Meeting on Ferroelectricity, Bordeaux, France, EU. (reposiTUm)

1112.   Neophytou, N., Kosina, H. (2011).
Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035042 (reposiTUm)

1111.   Vitanov, S., Kuzmik, J., Palankovski, V. (2011).
Study of the Conduction Properties of the N++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs.
In Annual Journal of Electronics (pp. 113–116), Sozopol, Bulgaria. (reposiTUm)

1110.   Stanojevic, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2011).
Subband Engineering in N-Type Silicon Nanowires Using Strain and Confinement.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 99–100), Granadea, Spanien, Austria. (reposiTUm)

1109.   Stanojevic, Z., Sverdlov, V., Selberherr, S. (2011).
Subband Structure Engineering in Silicon-On-Insulator FinFETs Using Confinement.
In ECS Transactions (pp. 117–122), Montreal. https://doi.org/10.1149/1.3570785 (reposiTUm)

1108.   Franco, J., Kaczer, B., Eneman, G., Roussel, P., Grasser, T., Mitard, J., Ragnarsson, L., Cho, M., Witters, L., Chiarella, T., Togo, M., Wang, W., Hikavyy, A., Loo, R., Horiguchi, N., Groeseneken, G. (2011).
Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131580 (reposiTUm)

1107.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

1106.   Aloise, G., Vitanov, S., Palankovski, V. (2011).
Temperature Dependence of the Transport Properties of InN.
In Official Proceedings of Microtherm 2011 (p. 6), Lodz, Poland. (reposiTUm)

1105.   Grasser, T., Aichinger, T., Pobegen, G., Reisinger, H., Wagner, P., Franco, J., Nelhiebel, M., Kaczer, B. (2011).
The 'Permanent' Component of NBTI: Composition and Annealing.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 9), Phoenix. (reposiTUm)

1104.   Neophytou, N., Kosina, H. (2011).
Thermoelectric Power Factor of Low Dimensional Silicon Nanowires.
In Conference Proceedings of 9th European Conference on Thermoelectrics (p. 4), Thessaloniki, Greece. (reposiTUm)

1103.   Neophytou, N., Kosina, H. (2011).
Thermoelectric Power Factor of Narrow Silicon Nanowires From Atomistic Considerations.
In Book of Abstracts (p. 1), Michigan, USA. (reposiTUm)

1102.   Neophytou, N., Kosina, H. (2011).
Thermoelectric Properties of Ultra Narrow Silicon Nanowires From Atomistic Calculations.
In APS March Meeting 2011 (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1101.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011).
Transport Gap Engineering in Zigzag Graphene Nanoribbons.
In Poster Abstracts Book (TNT 2011) (p. 2), Segovia, Austria. (reposiTUm)

1100.   Selberherr, S. (2011).
Transport Modeling for Nanoscale Semiconductor Devices.
IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm)

1099.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2011).
Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (p. 64), Sozopol, Bulgaria. (reposiTUm)

1098.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Transport Properties of Spin Field-Effect Transistors Built on Si and InAs.
In Ulis 2011 Ultimate Integration on Silicon, Bologna, Austria. https://doi.org/10.1109/ulis.2011.5757998 (reposiTUm)

1097.   Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., Schlünder, C. (2011).
Understanding and Modeling AC BTI.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 8), Phoenix. (reposiTUm)

1096.   Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T. (2011).
Understanding Temperature Acceleration for NBTI.
In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131623 (reposiTUm)

1095.   Bukhori, M., Grasser, T., Kaczer, B., Reisinger, H., Asenov, A. (2010).
&Amp;#x2018;Atomistic&#x2019; Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706490 (reposiTUm)

1094.   Franco, J., Kaczer, B., Eneman, G., Mitard, J., Stesmans, A., Afanas'ev, V., Kauerauf, T., Roussel, P., Toledano-Luque, M., Cho, M., Degraeve, R., Grasser, T., Ragnarsson, L., Witters, L., Tseng, J., Takeoka, S., Wang, W., Hoffmann, T., Groeseneken, G. (2010).
6&#x00C5; EOT Si<inf>0.45</Inf>Ge<inf>0.55</Inf> pMOSFET With Optimized Reliability (V<inf>DD</Inf>=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT.
In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703292 (reposiTUm)

1093.   Weinbub, J., Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2010).
A Dispatched Covariant Type System for Numerical Applications in C++.
In AIP Conference Proceedings (pp. 1663–1666), Korfu, Griechenland. (reposiTUm)

1092.   Weinbub, J., Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2010).
A Lightweight Material Library for Scientific Computing in C++.
In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 454–458), Malta. (reposiTUm)

1091.   Rupp, K., Grasser, T., Jüngel, A. (2010).
A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation.
In Proceedings of the Junior Scientist Conference 2010 (pp. 7–8), Vienna, Austria. (reposiTUm)

1090.   Mach, G., Heinzl, R., Schwaha, P., Stimpfl, F., Weinbub, J., Selberherr, S. (2010).
A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms.
In AIP Conference Proceedings (pp. 1647–1650), Korfu, Griechenland. (reposiTUm)

1089.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
A Monte Carlo Simulation of Reproducible Hysteresis in RRAM.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677934 (reposiTUm)

1088.   Schlünder, C., Reisinger, H., Gustin, W., Grasser, T. (2010).
A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery.
In GMM- Fachbericht (pp. 33–40), Wildbad Kreuth. (reposiTUm)

1087.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 396–399), Montreux, Austria. (reposiTUm)

1086.   Stimpfl, F., Weinbub, J., Heinzl, R., Schwaha, P., Selberherr, S. (2010).
A Unified Topological Layer for Finite Element Space Discretization.
In AIP Conference Proceedings (pp. 1655–1658), Korfu, Griechenland. (reposiTUm)

1085.   Neophytou, N., Klimeck, G., Kosina, H. (2010).
A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5678007 (reposiTUm)

1084.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677989 (reposiTUm)

1083.   Garcia-Barrientos, A., Palankovski, V., Grimalsky, V. (2010).
Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films.
In 2010 27th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2010.5490510 (reposiTUm)

1082.   Garcia-Barrientos, A., Palankovski, V. (2010).
Amplification of Space Charge Waves in N-InP Films.
In 2010 7th International Conference on Electrical Engineering Computing Science and Automatic Control, Chiapas, Mexico. https://doi.org/10.1109/iceee.2010.5608605 (reposiTUm)

1081.   Starkov, I., Tyaginov, S., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 139–144), Singapore. (reposiTUm)

1080.   Rupp, K., Ceric, H. (2010).
Analytical and Numerical Investigation of the Segregation Problem.
4th International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo, EU. (reposiTUm)

1079.   Neophytou, N., Wagner, M., Kosina, H. (2010).
Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires.
In Note-Book of Abstracts (p. 30), Como, I. (reposiTUm)

1078.   Neophytou, N., Kosina, H. (2010).
Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires.
In Proceedings of the Annual March Meeting of the American Physical Society (p. 401), Portland. (reposiTUm)

1077.   Rupp, K., Weinbub, J., Rudolf, F. (2010).
Automatic Performance Optimization in ViennaCL for GPUs.
In Proceedings of the 9th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing - POOSC '10, Reno, Nevada, USA. https://doi.org/10.1145/2039312.2039318 (reposiTUm)

1076.   Dedyk, A., Pavlova, Y., Pakhomov, O., Starkov, A., Starkov, I., Semenov, A., Karmanenko, S. (2010).
Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors.
In Book of Abstracts WoDiM 2010 (p. 93), Bratislava, Slovakia. (reposiTUm)

1075.   Grasser, T. (2010).
Characterization and Modeling of the Negative Bias Temperature Instability.
VDE/VDI GMM Workshop “Stand und Perspektiven von SOI-Technologien und Anwendungen,” München, Austria. (reposiTUm)

1074.   Gös, W., Schanovsky, F., Hehenberger, P., Wagner, P., Grasser, T. (2010).
Charge Trapping and the Negative Bias Temperature Instability.
In Meet. Abstr. - Electrochem. Soc. 2010 (p. 565), Las Vegas, USA. (reposiTUm)

1073.   Vainshtein, S., Yuferev, V., Kostamovaara, J., Palankovski, V. (2010).
Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications.
In Annual Journal of Electronics (pp. 12–17), Sozopol. (reposiTUm)

1072.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices.
In Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI) (pp. 273–274), Tokyo. (reposiTUm)

1071.   Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T. (2010).
Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1073–1077), Phoenix. (reposiTUm)

1070.   Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Degraeve, R., Franco, J., Kauerauf, T., Grasser, T., Groeseneken, G. (2010).
Depth Localization of Trapped Holes in SiON After Positive and Negative Gate Stress.
Semiconductor Interface Specialists Conference (SISC), Arlington, Non-EU. (reposiTUm)

1069.   Milovanovic, G., Baumgartner, O., Kosina, H. (2010).
Design of a MIR QCL Based on Intervalley Electron Transfer: A Monte Carlo Approach.
In Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (pp. 140–141), Shanghai. (reposiTUm)

1068.   Rupp, K. (2010).
Deterministic Numerical Solution of the Boltzmann Transport Equation.
In Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS (pp. 7–8), Wien. (reposiTUm)

1067.   Huang, R., Robl, W., Dehm, G., Ceric, H., Detzel, T. (2010).
Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 1–6), Singapore. (reposiTUm)

1066.   Ceric, H., Orio, R., Selberherr, S. (2010).
Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 167–170), Singapore. (reposiTUm)

1065.   Vitanov, S., Palankovski, V. (2010).
Electron Mobility Models for III-Nitrides.
In Annual Journal of Electronics (pp. 18–21), Sozopol. (reposiTUm)

1064.   Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010).
Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band K &Amp;#x00B7; P Versus Tight Binding.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677927 (reposiTUm)

1063.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Enhanced Valley Splitting in Silicon Nanowires and Point Contacts.
In Abstract Book of the Nanoelectronics Days 2010 (p. 118), Aachen. (reposiTUm)

1062.   Neophytou, N., Kosina, H. (2010).
Extracting Thermoelectric Properties of Nanostructures Using the Atomistic Sp3d5s*-So Tight-Binding Model.
In Nanostructured Thermoelectric Materials (p. 1), Physikzentrum Bad Honnef. (reposiTUm)

1061.   Makarov, A., Weinbub, J., Sverdlov, V., Selberherr, S. (2010).
First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory.
In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 181–186), Malta. (reposiTUm)

1060.   Gottschling, P., Heinzl, R., Weinbub, J., Kirchner, N., Sauer, M., Klomfass, A., Steinhardt, C., Wensch, J. (2010).
Generic C++ Implementation of High-Performance BFS-RBF-based Mesh Motion Schemes.
In AIP Conference Proceedings (pp. 1631–1634), Korfu, Griechenland. (reposiTUm)

1059.   Starkov, I., Tyaginov, S., Enichlmair, H., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Ceric, H., Grasser, T. (2010).
HC Degradation Model: Interface State Profile-Simulations vs. Experiment.
In Book of Abstracts (p. 128), Catania. (reposiTUm)

1058.   Vitanov, S., Palankovski, V. (2010).
High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs.
In Proceedings of the Junior Scientist Conference (pp. 59–60), Vienna, Austria. (reposiTUm)

1057.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Hole Capture Into Oxide Defects in MOS Structures From First Principles.
In Abstract Book (p. 435), Berlin. (reposiTUm)

1056.   Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 341–345), Singapore. (reposiTUm)

1055.   Vitanov, S., Palankovski, V., Selberherr, S. (2010).
Hydrodynamic Models for GaN-Based HEMTs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

1054.   Aichinger, T., Puchner, S., Nelhiebel, M., Grasser, T., Hutter, H. (2010).
Impact of Hydrogen on Recoverable and Permanent Damage Following Negative Bias Temperature Stress.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1063–1068), Phoenix. (reposiTUm)

1053.   Ceric, H., de Orio, R., Selberherr, S. (2010).
Impact of Parameter Variability on Electromigration Lifetime Distribution.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604523 (reposiTUm)

1052.   Franco, J., Kaczer, B., Mitard, J., Eneman, G., Roussel, Ph. J., Crupi, F., Grasser, T., Witters, L., Hoffmann, T. Y., Groeseneken, G. (2010).
Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs.
Semiconductor Interface Specialists Conference (SISC), Arlington, Non-EU. (reposiTUm)

1051.   Franco, J., Kaczer, B., Cho, M., Eneman, G., Groeseneken, G., Grasser, T. (2010).
Improvements of NBTI Reliability in SiGe P-FETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1082–1085), Phoenix. (reposiTUm)

1050.   Rupp, K. (2010).
Increased Efficiency in Finite Element Computations Through Template Metaprogramming.
In Proceedings of the 2010 Spring Simulation Multiconference on - SpringSim '10, Orlando, FL, USA. https://doi.org/10.1145/1878537.1878633 (reposiTUm)

1049.   Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010).
Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling.
In Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 3), Maastricht. (reposiTUm)

1048.   Sverdlov, V., Baumgartner, O., Selberherr, S. (2010).
Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films.
In Bulletin American Physical Society (APS March Meeting 2010) (p. B9.00001), Los Angeles/USA, Austria. (reposiTUm)

1047.   Schwaha, P., Heinzl, R. (2010).
Marching Simplices.
In AIP Conference Proceedings (pp. 1651–1654), Korfu, Griechenland. (reposiTUm)

1046.   Pourfath, M., Sverdlov, V., Selberherr, S. (2010).
Modeling Demands for Nanoscale Devices.
In Proceedings of the Device Research Conference (DRC) (pp. 211–214), Santa Barbara , California, Austria. (reposiTUm)

1045.   Selberherr, S. (2010).
Modeling Floating Body Z-Ram Storage Cells.
IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm)

1044.   Selberherr, S. (2010).
Modeling Solar Cells.
IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm)

1043.   Sverdlov, V., Selberherr, S. (2010).
Modeling Floating Body Z-Ram Storage Cells.
In 2010 27th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2010.5490533 (reposiTUm)

1042.   Sverdlov, V., Selberherr, S. (2010).
Modeling of Modern MOSFETs With Strain.
In Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010) (pp. 1–11), La Plata, Buenos Aires, Argentina. (reposiTUm)

1041.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations.
In Book of Abstracts (p. 141), Catania. (reposiTUm)

1040.   Huang, R., Robl, W., Detzel, T., Ceric, H. (2010).
Modeling of Stress Evolution of Electroplated Cu Films During Self-Annealing.
In Proceedings of the IEEE International Reliability Physics Symposium (pp. 911–917), Anaheim, USA. (reposiTUm)

1039.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations.
In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-39), Borovets. (reposiTUm)

1038.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Monte Carlo Simulation of Bipolar Resistive Switching Memories.
In Proceedings of the Nanoelectronics Days 2010 (p. 22), Aachen. (reposiTUm)

1037.   Schanovsky, F., Gös, W., Grasser, T. (2010).
Mulit-Phonon Hole-Trapping From First-Principles.
In Book of Abstracts (p. 54), Catania. (reposiTUm)

1036.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010).
Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

1035.   Grasser, T., Aichinger, T., Reisinger, H., Franco, J., Wagner, P., Nelhiebel, M., Ortolland, C., Kaczer, B. (2010).
On the &Amp;#x2018;permanent&#x2019; Component of NBTI.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706472 (reposiTUm)

1034.   Pourfath, M., Yazdanpanah, A., Fathipour, M., Kosina, H. (2010).
On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677936 (reposiTUm)

1033.   Kaczer, B., Grasser, T., Roussel, P., Franco, J., Degraeve, R., Ragnarsson, L., Simoen, E., Groeseneken, G., Reisinger, H. (2010).
Origin of NBTI Variability in Deeply Scaled pFETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 26–32), Phoenix. (reposiTUm)

1032.   Wagner, P., Grasser, T., Reisinger, H., Kaczer, B. (2010).
Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters From Time Dependent Defect Spectroscopy.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 134–138), Singapore. (reposiTUm)

1031.   Nedjalkov, M., Schwaha, P., Baumgartner, O., Selberherr, S. (2010).
Particle Model of the Scattering-Induced Wigner Function Correction.
In Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 411–418), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-12535-5_48 (reposiTUm)

1030.   Kosina, H. (2010).
Quantum Cascade Laser Modeling Based on the Pauli Master Equation.
In Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS (p. 6), Wien. (reposiTUm)

1029.   Grasser, T. (2010).
Recent Developments in Device Reliability Modeling.
MOS-AK ESSDERC Companion Workshop, Grenoble, Austria. (reposiTUm)

1028.   Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, P., Groeseneken, G. (2010).
Recent Trends in Bias Temperature Instability.
In Book of Abstracts (p. 55), Catania. (reposiTUm)

1027.   Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Roussel, P., Nelhiebel, M. (2010).
Recent Advances in Understanding the Bias Temperature Instability.
In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703295 (reposiTUm)

1026.   Hehenberger, P., Reisinger, H., Grasser, T. (2010).
Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706473 (reposiTUm)

1025.   Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H. (2010).
Recovery-Free Electron Spin Resonance Observations of NBTI Degradation.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 43–49), Phoenix. (reposiTUm)

1024.   Poschalko, C., Selberherr, S. (2010).
Relation Between the PCB Near Field and the Common Mode Coupling From the PCB to Cables.
In Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC) (pp. 1102–1105), Beijing. (reposiTUm)

1023.   Sverdlov, V., Selberherr, S. (2010).
Scalability of a Second Generation Z-Ram Cell: A Computational Study.
In Proceedings of the International Conference on Computational, Experimental Engineering and Sciences (ICCES) (pp. 232–247), Las Vegas. (reposiTUm)

1022.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-06), Kona. (reposiTUm)

1021.   Grasser, T. (2010).
Statistical Reliability in Nanoscale Devices.
SISPAD Workshop, Nürnberg, Germany, EU. (reposiTUm)

1020.   Nedjalkov, M., Selberherr, S., Dimov, I. (2010).
Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation.
In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-43), Borovets. (reposiTUm)

1019.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory.
In Proceedings of the 17th International Symposium on the Physics, Failure Analysis of Integrated Circuits (pp. 309–312), Singapore. (reposiTUm)

1018.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604517 (reposiTUm)

1017.   Sverdlov, V., Selberherr, S. (2010).
Strain Engineering Techniques: A Rigorous Physical Review.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-05), Kona. (reposiTUm)

1016.   Baumgartner, O., Sverdlov, V., Kosina, H., Selberherr, S. (2010).
Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films.
In Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 91–92), Granadea, Spanien, Austria. (reposiTUm)

1015.   Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Miglio, L. (2010).
Strained MOSFETs on Ordered SiGe Dots.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 297–300), Montreux, Austria. (reposiTUm)

1014.   Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010).
Subband Structure of Silicon Nanowires From the Hensel-Hasegawa-Nakayama Model.
In Proceedings of the 11th International Conference on Ultimate Integration o Silicon (pp. 69–72), Bologna, Austria. (reposiTUm)

1013.   Rupp, K. (2010).
Symbolic Integration at Compile Time in Finite Element Methods.
In Proceedings of the 2010 International Symposium on Symbolic and Algebraic Computation (pp. 347–354), Kaiserslautern. (reposiTUm)

1012.   Rupp, K., Grasser, T., Jüngel, A. (2010).
System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604542 (reposiTUm)

1011.   Toledano-Luque, M., Kaczer, B., Roussel, P., Grasser, T., Groeseneken, G. (2010).
Temperature Dependence of the Emission and Capture Times of SiON Individual Traps After Positive Bias Temperature Stress.
In Book of Abstracts (p. 28), Catania. (reposiTUm)

1010.   Pourfath, M., Yazdanpanah Goharrizi, A., Kosina, H. (2010).
The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons.
In Abstract Book (p. 419), Berlin. (reposiTUm)

1009.   Reisinger, H., Grasser, T., Schlunder, C., Gustin, W. (2010).
The Statistical Analysis of Individual Defects Constituting NBTI and Its Implications for Modeling DC- And AC-Stress.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 7–15), Phoenix. (reposiTUm)

1008.   Grasser, T., Reisinger, H., Wagner, P., Kaczer, B., Schanovsky, F., Gös, W. (2010).
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 16–25), Phoenix. (reposiTUm)

1007.   Reisinger, H., Grasser, T., Hofmann, K., Gustin, W., Schlünder, C. (2010).
The Impact of Recovery on BTI Reliability Assessments.
In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706474 (reposiTUm)

1006.   Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2010).
Thermal Properties of Graphene Antidots.
In Abstract Book of the Nanoelectronics Days 2010 (p. 102), Aachen. (reposiTUm)

1005.   Neophytou, N., Kosina, H. (2010).
Thermoelectric Properties of Scaled Silicon Nanostructures Using the Sp3d5s*-So Atomistic Tight-Binding Model.
In Proceedings of the 29th International Conference on Thermoelectrics (p. 71), Shanghai. (reposiTUm)

1004.   Ertl, O., Filipovic, L., Selberherr, S. (2010).
Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604573 (reposiTUm)

1003.   Pourfath, M., Sverdlov, V., Selberherr, S. (2010).
Transport Modeling for Nanoscale Semiconductor Devices.
In Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (pp. 1737–1740), Peking, Austria. (reposiTUm)

1002.   Grasser, T. (2010).
Transport Modeling in Modern Semiconductor Devices.
CoMoN Workshop 2010, Tarragona, EU. (reposiTUm)

1001.   Vasicek, M., Sverdlov, V., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2010).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 443–450), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-12535-5_52 (reposiTUm)

1000.   Lugstein, A., Steinmair, M., Steiger-Thirsfeld, A., Kosina, H., Bertagnolli, E. (2010).
Tuning the Electronic Properties of Ultra-Strained Silicon Nanowires.
MRS Fall Meeting, Boston, USA, Austria. (reposiTUm)

999.   Rupp, K., Rudolf, F., Weinbub, J. (2010).
ViennaCL - A High Level Linear Algebra Library for GPUs and Multi-Core CPUs.
In Proceedings of the International Workshop on GPUs and Scientific Applications (GPUScA 2010) (pp. 51–56), Vienna. (reposiTUm)

998.   Weinbub, J., Rupp, K., Selberherr, S. (2010).
ViennaIPD - An Input Control Language for Scientific Computing.
In Proceedings of the Industrial Simulation Conference (pp. 34–38), Budapest. (reposiTUm)

997.   Ertl, O., Selberherr, S. (2009).
A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290221 (reposiTUm)

996.   Sonderfeld, R., Heinzl, R. (2009).
A Generic and Self-Optimizing Polynomial Library.
In Proceedings of the 8th workshop on Parallel/High-Performance, Genova. (reposiTUm)

995.   Goes, W., Grasser, T., Karner, M., Kaczer, B. (2009).
A Model for Switching Traps in Amorphous Oxides.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290226 (reposiTUm)

994.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009).
A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs With Recessed Gates.
In HETECH 2009 Book of Abstracts (pp. 109–110), Smolenice Castle, Slovakia, Austria. (reposiTUm)

993.   Reisinger, H., Grasser, T., Schlünder, C. (2009).
A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 30–35), S. Lake Tahoe. (reposiTUm)

992.   Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P., Nelhiebel, M. (2009).
A Two-Stage Model for Negative Bias Temperature Instability.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 33–44), Phoenix. (reposiTUm)

991.   Vasicek, M. (2009).
Advanced Macroscopic Transport Models.
In Quantum Systems and Devices: Analysis, Simulations, Applications (p. 32), Beijing. (reposiTUm)

990.   Palankovski, V. (2009).
Analysis and Simulation of Semicondutor Devices.
3er. Congreso Nacional de Mecatronica, Zempoala, Mexico, Non-EU. (reposiTUm)

989.   Neophytou, N., Wagner, M., Kosina, H., Selberherr, S. (2009).
Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures Using an Atomistic Thight-Binding Model.
In Book of Abstracts (p. 91), Freiburg. (reposiTUm)

988.   Bindu, B., Gös, W., Kaczer, B., Grasser, T. (2009).
Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 93–96), S. Lake Tahoe. (reposiTUm)

987.   Pourfath, M., Kosina, H. (2009).
Carbon Based Electronics: A Computational Study.
In Quantum Systems and Devices: Analysis, Simulations, Applications (p. 18), Beijing. (reposiTUm)

986.   Pourfath, M., Selberherr, S. (2009).
Carbon-Based Electronics: A Computational Study.
In Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD) (p. 6), New Dehli. (reposiTUm)

985.   Schwaha, P., Baumgartner, O., Heinzl, R., Nedjalkov, M., Selberherr, S., Dimov, I. (2009).
Classical Approximation of the Scattering Induced Wigner Correction Equation.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091092 (reposiTUm)

984.   Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009).
Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 311–314), Montreux, Austria. (reposiTUm)

983.   Schwaha, P., Cervenka, J., Nedjalkov, M., Gurov, T., Arsov, G., Misev, A., Zoric, A., Ilic, S. (2009).
Computational Electronics on GRID: A Mixed Mode Carrier Transport Model.
In AIP Conference Proceedings, Sozopol (Bulgaria). https://doi.org/10.1063/1.3265331 (reposiTUm)

982.   Ceric, H., de Orio, R., Cervenka, J., Selberherr, S. (2009).
Copper Microstructure Impact on Evolution of Electromigration Induced Voids.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290222 (reposiTUm)

981.   Grasser, T., Kaczer, B. (2009).
Critical Modeling Issues in Negative Bias Temperature Instability.
In Meeting Abstracts MA 2009-01 (p. 793), San Francisco. (reposiTUm)

980.   Heinzl, R. (2009).
Data Structure Properties for Scientific Computing: An Algebraic Topology Library.
In Proceedings of the 8th workshop on Parallel/High-Performance, Genova. (reposiTUm)

979.   Neophytou, N., Kosina, H., Selberherr, S., Klimeck, G. (2009).
Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290245 (reposiTUm)

978.   Tyaginov, S., Gös, W., Grasser, T., Sverdlov, V., Schwaha, P., Heinzl, R., Stimpfl, F. (2009).
Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 514–522), Phoenix. (reposiTUm)

977.   Hehenberger, P., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M. (2009).
Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 1033–1038), Phoenix. (reposiTUm)

976.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
Electromigration Failure Development in Modern Dual-Damascene Interconnects.
In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 5), Florianopolis. (reposiTUm)

975.   Sverdlov, V., Windbacher, T., Baumgartner, O., Selberherr, S. (2009).
Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures From the Two-Band k.p Model.
In EUROSOI 2009 Conference Proceedings (pp. 81–82), Granadea, Spanien, Austria. (reposiTUm)

974.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovski, F., Selberherr, S. (2009).
Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts.
In Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH) (p. 301), Cracow. (reposiTUm)

973.   Starkov, I., Tyaginov, S., Grasser, T. (2009).
Green's Function Asymptotic in Two-Layered Periodic Medium.
In Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology (pp. 111–112), Minsk. (reposiTUm)

972.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009).
High-Temperature Modeling of AlGaN/GaN HEMTs.
In 2009 International Semiconductor Device Research Symposium, College Park, MD, USA. https://doi.org/10.1109/isdrs.2009.5378300 (reposiTUm)

971.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films.
In ECS Transactions (pp. 389–396), Ouro Preto. (reposiTUm)

970.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance.
In 215th ECS Meeting (pp. 15–26), San Francisco. (reposiTUm)

969.   Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009).
Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate.
In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Maastricht. (reposiTUm)

968.   Franco, J., Kaczer, B., Stesmans, A., Afanas´Ev, V., Martens, K., Aoulaiche, M., Grasser, T., Mitard, J., Groeseneken, G. (2009).
Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs.
40th Semiconductor Interface Specialists Conference (SISC), Washington, Non-EU. (reposiTUm)

967.   Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009).
Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics.
In Proceedings of the 2009 MRS Spring Meeting, San Francisco. (reposiTUm)

966.   Vitanov, S., Palankovski, V. (2009).
Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs.
In Annual Journal of Electronics (pp. 144–147), Sozopol. (reposiTUm)

965.   Pourfath, M., Selberherr, S. (2009).
Modeling Optical Sensors Based on Carbon Nanotubes.
In Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT) (pp. 1381–1384), New Delhi. (reposiTUm)

964.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009).
Modeling Techniques for Strained CMOS Technology.
In 216th ECS Meeting (pp. 3–18), Vienna. (reposiTUm)

963.   Windbacher, T., Sverdlov, V., Selberherr, S. (2009).
Modeling of Low Concentrated Buffer DNA Detection With Suspend Gate Field-Effect Transistors (SGFET).
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091122 (reposiTUm)

962.   Kaczer, B., Grasser, T., Martin-Martinez, J., Simoen, E., Aoulaiche, M., Roussel, P., Groeseneken, G. (2009).
NBTI From the Perspective of Defect States With Widely Distributed Time Scales.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 55–60), Phoenix. (reposiTUm)

961.   Milovanovic, G., Kosina, H. (2009).
Nonparabolicity Effects in Quantum Cascade Lasers.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091129 (reposiTUm)

960.   Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2009).
Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091131 (reposiTUm)

959.   Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2009).
Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices.
In EUROSOI 2009 Conference Proceedings (pp. 57–58), Granadea, Spanien, Austria. (reposiTUm)

958.   Aichinger, T., Nelhiebel, M., Grasser, T. (2009).
On the Temperature Dependence of NBTI Recovery.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (p. 1), Phoenix. (reposiTUm)

957.   Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009).
On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress.
In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 4), Maastricht. (reposiTUm)

956.   Southwick III, R., Knowlton, B., Kaczer, B., Grasser, T. (2009).
On the Thermal Activation of Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 36–41), S. Lake Tahoe. (reposiTUm)

955.   Nedjalkov, M., Schwaha, P., Baumgartner, O., Selberherr, S. (2009).
Particle Model of the Scattering-Induced Wigner Function Correction.
In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 79), Sozopol, Bulgaria. (reposiTUm)

954.   Pourfath, M., Baumgartner, O., Kosina, H., Selberherr, S. (2009).
Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors.
In Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 13–14), Singapore. (reposiTUm)

953.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009).
Perspectives of Silicon for Future Spintronic Applications From the Peculiarities of the Subband Structure in Ultra-Thin Films.
In Proceedings of 2009 Silicon Nanoelectronics Workshop (pp. 95–96), Kyoto. (reposiTUm)

952.   Grasser, T. (2009).
Physical Mechanisms and Modeling of the Bias Temperature Instability.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

951.   Wagner, P., Aichinger, T., Grasser, T., Nelhiebel, M., Vandamme, L. (2009).
Possible Correlation Between Flicker Noise and Bias Temperature Stress.
In Proceedings of the 20th International Conference on Noise and Fluctuations (pp. 621–624), Salamanca, Spanien, Austria. (reposiTUm)

950.   Neophytou, N., Kosina, H., Rakshit, T. (2009).
Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091141 (reposiTUm)

949.   Sverdlov, V., Selberherr, S. (2009).
Scaling of Advanced Floating Body Z-Ram Storage Cells: A Modeling Approach.
In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 4), Florianopolis. (reposiTUm)

948.   Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009).
Si-O Bond-Breakage Energetics Under Consideration of the Whole Crystal.
In Proceedings of the International Semiconductor Technology Conference, China Semiconductor Technology International Conference (p. 84), Shanghai. (reposiTUm)

947.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009).
Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads (p. 58), Sardinia. (reposiTUm)

946.   Milovanovic, G., Baumgartner, O., Kosina, H. (2009).
Simulation of Quantum Cascade Lasers Using Robin Boundary Conditions.
In Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 7–8), Singapore. (reposiTUm)

945.   Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009).
Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091156 (reposiTUm)

944.   Selberherr, S. (2009).
Strain Engineering in CMOS Devices.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

943.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2009).
Study of the Properties of Biotin-Streptavidin Sensitive BioFETs.
In Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES) (pp. 24–30), Porto. (reposiTUm)

942.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2009).
Study of the Properties of Biotin-Streptavidin Sensitive Biofets.
In Final Program and Book of Abstracts (p. 42), Porto. (reposiTUm)

941.   Sverdlov, V., Baumgartner, O., Selberherr, S. (2009).
Subband Parameters in Strained (110) Silicon Films From the Hensel-Hasegawa-Nakayama Model of the Conduction Band.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS) (pp. TP6-03.1–2), College Park, MD, USA. (reposiTUm)

940.   Sverdlov, V., Baumgartner, O., Tyaginov, S., Windbacher, T., Selberherr, S. (2009).
Subband Structure in Ultra-Thin Silicon Films.
In Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology (pp. 62–63), Minsk. (reposiTUm)

939.   Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P., Wagner, P., Nelhiebel, M., Franco, J., Kaczer, B. (2009).
Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise.
In 2009 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2009.5424235 (reposiTUm)

938.   de Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290219 (reposiTUm)

937.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on Electromigration Induced Voids.
In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 694–697), Singapore. (reposiTUm)

936.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on Electromigration-Induced Failure Development.
In ECS Transactions (pp. 345–352), Ouro Preto. (reposiTUm)

935.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on the Electromigration Lifetime Distribution.
In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009) (pp. 731–734), Singapore. (reposiTUm)

934.   Schwaha, P., Heinzl, R., Nedjalkov, M. (2009).
The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example.
In Proceedings of the 8th workshop on Parallel/High-Performance, Genova. (reposiTUm)

933.   Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., Esseni, D. (2009).
The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091158 (reposiTUm)

932.   Pourfath, M., Kosina, H., Selberherr, S. (2009).
Theoretical Study of Graphene Nanoribbon Photo-Detectors.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (pp. 178–179), Kaanapali. (reposiTUm)

931.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290252 (reposiTUm)

930.   Ertl, O., Selberherr, S. (2009).
Three-Dimensional Plasma Etching Simulation Using Advanced Ray Tracing and Level Set Techniques.
In ECS Transactions (pp. 61–68), Ouro Preto. (reposiTUm)

929.   Kosina, H. (2009).
Transport Modeling for Nanowires and Nanotubes.
In Proceedings of the Final FoNE Conference (p. 35), Miraflores de la Sierra, Madrid. (reposiTUm)

928.   Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2009).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 93), Sozopol, Bulgaria. (reposiTUm)

927.   Aichinger, T., Nelhiebel, M., Grasser, T. (2009).
Unambiguous Identification of the NBTI Recovery Mechanism Using Ultra-Fast Temperature Changes.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2–7), Phoenix. (reposiTUm)

926.   Grasser, T. (2009).
Understanding Negative Bias Temperature Instability in the Context of Hole Trapping.
International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland, EU. (reposiTUm)

925.   Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., Selberherr, S. (2009).
Valley Splitting in Thin Silicon Films From a Two-Band K·p Model.
In Proceedings of the 10th International Conference on Ultimate Integration of Silicon (pp. 277–280), Bologna, Austria. (reposiTUm)

924.   Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H. (2009).
What Triggers NBTI? An "On the Fly" Electron Spin Resonance Approach.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 42–45), S. Lake Tahoe. (reposiTUm)

923.   Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S. (2008).
A Delaunay Mesh Generation Approach Without the Use of Convex Hulls.
In Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing (p. 2), Moscow, Russia. (reposiTUm)

922.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C. (2008).
A General Bottom-Up Modeling Approach for BioFETs.
In Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS), Vienna, Austria. (reposiTUm)

921.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2008).
A Numerical Study of Graphene Nano-Ribbon Based Resonant Tunneling Diodes.
In International Symposium on Graphene Devices: Technology, Physics, and Modeling (pp. 66–67), Japan. (reposiTUm)

920.   Schwaha, P., Stimpfl, F., Heinzl, R., Selberherr, S. (2008).
A Parallel Delaunay and Advancing Front Mesh Generation Approach.
In Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing (p. 2), Moscow, Russia. (reposiTUm)

919.   Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2008).
A Parallel Generic Scientific Simulation Environment.
In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing, Umea. (reposiTUm)

918.   Gös, W., Karner, M., Sverdlov, V., Grasser, T. (2008).
A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics.
In Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 249–254), Singapore. (reposiTUm)

917.   Stimpfl, F., Heinzl, R., Schwaha, P. (2008).
A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648288 (reposiTUm)

916.   Grasser, T., Kaczer, B., Gös, W. (2008).
An Energy-Level Perspective of Bias Temperature Instability.
In Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Maastricht. (reposiTUm)

915.   Pourfath, M., Selberherr, S. (2008).
Analysis of Carbon Nanotube Photo-Detectors.
In Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW) (p. TU-06), Kona. (reposiTUm)

914.   Orio, R., Carniello, S., Ceric, H., Selberherr, S. (2008).
Analysis of Electromigration in Dual-Damascene Interconnect Structures.
In ECS Transactions (pp. 337–348), Ouro Preto. (reposiTUm)

913.   Lacerda de Orio, R., Ceric, H. (2008).
Analysis of Electromigration in Redundant Vias.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648281 (reposiTUm)

912.   Cervenka, J., Selberherr, S. (2008).
Analysis of Microstructure Impact on Electromigration.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648282 (reposiTUm)

911.   Poschalko, C., Selberherr, S. (2008).
Calculation of the Radiation From the Slot of a Slim Enclosure With a Cavity Resonator Model.
In 19th International Zurich Symposium on Electromagnetic Compatibility, (pp. 634–637), Singapore. (reposiTUm)

910.   Selberherr, S. (2008).
Challenges of the Nanoscale Era.
IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm)

909.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon.
In Micro- and Nanoelectronics 2007 (pp. 70251I-1–70251I-8), Athen, Greece. https://doi.org/10.1117/12.802503 (reposiTUm)

908.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2008).
Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms.
In 2008 26th International Conference on Microelectronics, Beograd. https://doi.org/10.1109/icmel.2008.4559225 (reposiTUm)

907.   Vasicek, M., Cervenka, J., Karner, M., Grasser, T. (2008).
Consistent Higher-Order Transport Models for SOI MOSFETs.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648254 (reposiTUm)

906.   Baumgartner, O., Schwaha, P., Karner, M. (2008).
Coupling of Non-Equilibrium Green&#x2019;s Function and Wigner Function Approaches.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648308 (reposiTUm)

905.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Current Transport in Carbon Nanotube Transistors.
In The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology (pp. 361–364), Peking, Austria. (reposiTUm)

904.   Grasser, T., Kaczer, B., Aichinger, T., Gös, W., Nelhiebel, M. (2008).
Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-K Gate Stacks.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 91–95), S. Lake Tahoe. (reposiTUm)

903.   Grasser, T. (2008).
Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation.
3rd SINANO Device Modeling Summer School, Bertinoro, Italy, EU. (reposiTUm)

902.   Poschalko, C., Selberherr, S. (2008).
Domain Separation With Port Interfaces for Calculation of Emissions From Enclosure Slots.
In 2008 IEEE International Symposium on Electromagnetic Compatibility, Detroit. https://doi.org/10.1109/isemc.2008.4652083 (reposiTUm)

901.   Tyaginov, S., Vexler, M., El Hdiy, A., Gacem, K., Zaporojtchenko, V. (2008).
Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures.
In 15th Workshop on Dielectrics in Microelectronics (pp. 227–228), Catania. (reposiTUm)

900.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond.
In Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 41–42), Granada, Austria. (reposiTUm)

899.   Vitanov, S., Palankovski, V. (2008).
Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation.
In Junior Scientist Conference Proceedings (pp. 221–222), Vienna, Austria. (reposiTUm)

898.   Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S. (2008).
High Performance Parallel Mesh Generation and Adaption.
In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing, Umea. (reposiTUm)

897.   Goes, W., Karner, M., Tyaginov, S., Hehenberger, P., Grasser, T. (2008).
Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648239 (reposiTUm)

896.   Sverdlov, V., Selberherr, S. (2008).
Mobility Modeling in Advanced MOSFETs With Ultra-Thin Silicon Body Under Stress.
In ECS Transactions (pp. 159–168), Ouro Preto. (reposiTUm)

895.   Windbacher, T., Selberherr, S. (2008).
Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648258 (reposiTUm)

894.   Pourfath, M., Selberherr, S. (2008).
Modeling Current Transport in Carbon Nanotube Transistors.
In IEEE International Conference on Electron Devices and Solid-State Circuit 2008 (p. 6), Hong Kong, Austria. (reposiTUm)

893.   Sverdlov, V., Selberherr, S. (2008).
Modeling and Simulation of Advanced Floating Body Z-Ram Memory Cells.
In Proceedings European Simulation and Modeling Conference (ESM) (pp. 380–384), Porto, Austria. (reposiTUm)

892.   Grasser, T., Goes, W., Kaczer, B. (2008).
Modeling Bias Temperature Instability During Stress and Recovery.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648238 (reposiTUm)

891.   Baumgartner, O., Karner, M., Kosina, H. (2008).
Modeling of High-K-Metal-Gate-Stacks Using the Non-Equilibrium Green&#x2019;s Function Formalism.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648310 (reposiTUm)

890.   Sverdlov, V., Ungersboeck, E., Kosina, H. (2008).
Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering.
In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 157–164), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_16 (reposiTUm)

889.   Palankovski, V., Wagner, M., Heiss, W. (2008).
Monte Carlo Simulation of Electron Transport in PbTe.
In Springer Proceedings in Physics (pp. 77–79). https://doi.org/10.1007/978-1-4020-8425-6_19 (reposiTUm)

888.   Vitanov, S., Palankovski, V. (2008).
Monte Carlo Study of Transport Properties of InN.
In Springer Proceedings in Physics (pp. 97–100). https://doi.org/10.1007/978-1-4020-8425-6_24 (reposiTUm)

887.   Grasser, T. (2008).
Negative Bias Temperature Instability: Modeling Challenges and Perspectives.
In 2008 Reliability Physics Tutorial Notes (pp. 113–120), Phoenix. (reposiTUm)

886.   Palankovski, V. (2008).
Novel High-Performance GaN Transistors.
In Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW) (p. MO-03), Kona. (reposiTUm)

885.   Pourfath, M., Kosina, H. (2008).
Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648242 (reposiTUm)

884.   Pourfath, M., Sverdlov, V., Kosina, H. (2008).
On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors.
In 1st Fone Conference Nanoelectronics 2008 (p. 41), Taormina, Italy. (reposiTUm)

883.   Aichinger, T., Nelhiebel, M., Grasser, T. (2008).
On the Temperature Dependence of NBTI Recovery.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

882.   Pourfath, M., Baumgartner, O., Kosina, H. (2008).
On the Non-Locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors.
In 2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore. https://doi.org/10.1109/nusod.2008.4668261 (reposiTUm)

881.   Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2008).
Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment.
In 7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08) (p. 5), Nantes. (reposiTUm)

880.   Selberherr, S. (2008).
Process Simulation for Modern Microelectronics Technologies.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

879.   Poschalko, C., Selberherr, S. (2008).
Radiated Emission From the Slot of a Slim Cubical Enclosure With Multiple Sources Inside.
In Proceedings of the 8th International Symposium on Electromagnetic Compatibility (pp. 109–114), Detroit. (reposiTUm)

878.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 214–217), Montreux, Austria. (reposiTUm)

877.   Vitanov, S., Palankovski, V. (2008).
Simulation of AlGaN/GaN HEMTs With InGaN Cap Layer.
In The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4 (pp. 67–70), Sozopol. (reposiTUm)

876.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2008).
Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes.
In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors (pp. 507–508), Wien, Österreich, Austria. (reposiTUm)

875.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2008).
Simulation of Field-Effect Biosensors (BioFETs).
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648270 (reposiTUm)

874.   Sverdlov, V., Selberherr, S. (2008).
Strain-Controlled Valley Splitting in Si-SiGe Heterostructures.
In Abstract Book (pp. 20–21), Princeton. (reposiTUm)

873.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2008).
Stress-Induced Anisotropy of Electromigration in Copper Interconnects.
In Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop (pp. 56–62), Dresden. (reposiTUm)

872.   Sverdlov, V., Windbacher, T., Kosina, H., Selberherr, S. (2008).
Stress-Induced Valley Splitting in Silicon Thin Films.
In Proceedings of the 9th International Conference on Ultimate Integration on Silicon (pp. 93–96), Bologna, Austria. (reposiTUm)

871.   Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2008).
Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages.
In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing, Umea. (reposiTUm)

870.   Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2008).
Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications.
In 7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08) (p. 6), Nantes. (reposiTUm)

869.   Vitanov, S., Palankovski, V., Pozzovivo, G., Kuzmik, J., Quay, R. (2008).
Systematical Study of InAlN/GaN Devices by Numerical Simulation.
In HETECH 2008 Book of Abstracts (pp. 159–160), Smolenice Castle, Slovakia, Austria. (reposiTUm)

868.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2008).
TCAD Solutions for Submicron Copper Interconnect.
In Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 78–81), Singapore. (reposiTUm)

867.   Reisinger, H., Vollertsen, R., Wagner, P., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C. (2008).
The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), S. Lake Tahoe. (reposiTUm)

866.   Ertl, O., Selberherr, S. (2008).
Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648303 (reposiTUm)

865.   Grasser, T. (2008).
Towards Understanding Negative Bias Temperature Instability.
In 2008 IEEE International Integrated Reliability Workshop Final Report. https://doi.org/10.1109/irws.2008.4796110 (reposiTUm)

864.   Vitanov, S., Vitanov, P., Palankovski, V. (2008).
Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon.
In 23rd European Photovoltaic Solar Energy Conference (pp. 1743–1745), Valencia. (reposiTUm)

863.   Kaczer, B., Grasser, T., Roussel, P., Martin-Martinez, J., O´Connor, R., O´Sullivan, B., Groeseneken, G. (2008).
Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 20–27), Phoenix. (reposiTUm)

862.   Okhonin, S., Nagoga, M., Lee, C., Colinge, J., Afzalian, A., Yan, R., Akhavan, N., Xiong, W., Sverdlov, V., Selberherr, S., Mazure, C. (2008).
Ultra-Scaled Z-Ram Cell.
In 2008 IEEE International SOI Conference Proceedings (pp. 157–158), New Paltz. (reposiTUm)

861.   Milovanovic, G., Kosina, H. (2008).
Valence Band Deformation Potentials in Semiconductors.
In Abstract Book (pp. 215–216), Princeton. (reposiTUm)

860.   Nedjalkov, M., Kosina, H., Vasileska, D. (2008).
Wigner Ensemble Monte Carlo: Challenges of 2D Nano-Device Simulation.
In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 139–147), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_14 (reposiTUm)

859.   Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T. (2007).
A 2d-Non-Parabolic Six Moments Model.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

858.   Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S. (2007).
A High Performance Webapplication for an Electro-Biological Problem.
In ECMS 2007 Proceedings edited by: I. Zelinka, Z. Oplatkova, A. Orsoni, Prag. https://doi.org/10.7148/2007-0218 (reposiTUm)

857.   Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S. (2007).
A Multi-Mode Mesh Generation Approach for Scientific Computing.
In Proceedings European Simulation and Modeling Conference (pp. 506–513), Malta. (reposiTUm)

856.   Heinzl, R., Mach, G., Schwaha, P., Selberherr, S. (2007).
A Performance Test Platform.
In Proceedings European Simulation and Modeling Conference (pp. 483–487), Malta. (reposiTUm)

855.   Grasser, T., Wagner, P., Hehenberger, P., Gös, W., Kaczer, B. (2007).
A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 6–11), S. Lake Tahoe. (reposiTUm)

854.   Baumgartner, O., Karner, M., Holzer, S., Pourfath, M., Grasser, T., Kosina, H. (2007).
Adaptive Energy Integration of Non-Equilibrium Green's Functions.
In NSTI Nanotech Proceedings (pp. 145–148), Anaheim, Austria. (reposiTUm)

853.   Kosina, H., Triebl, O., Grasser, T. (2007).
Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 317–320), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_76 (reposiTUm)

852.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Carbon Nanotube Based Transistors: A Computational Study.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730253 (reposiTUm)

851.   Li, L., Meller, G., Kosina, H. (2007).
Charge Injection Model for Organic Light-Emitting Diodes.
In International Conference on Organic Electronics, Eindhoven. (reposiTUm)

850.   Li, L., Meller, G., Kosina, H. (2007).
Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 377–380), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_91 (reposiTUm)

849.   Martens, K., Kaczer, B., Grasser, T., De Jaeger, B., Meuris, M., Groeseneken, G., Maes, H. E. (2007).
Charge Pumping Charcaterization of Germanium MOSFETs.
Semiconductor Interface Specialists Conference (SISC), Arlington, Non-EU. (reposiTUm)

848.   Gös, W., Grasser, T. (2007).
Charging and Discharging of Oxide Defects in Reliability Issues.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–32), S. Lake Tahoe. (reposiTUm)

847.   Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon.
In International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts, Moscow-Zvenigorod. (reposiTUm)

846.   Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Conduction Band in Silicon: Numerical Versus Analytical Two-Band K·p Model.
In 8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (p. 4), Ohrid, Macedonia. (reposiTUm)

845.   Meller, G., Li, L., Holzer, S., Kosina, H. (2007).
Dynamic Monte Carlo Simulation of an Amorphous Organic Device.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 373–376), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_90 (reposiTUm)

844.   Orio, R., Ceric, H., Selberherr, S. (2007).
Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures Under Electromigration Stress.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 62–63), Urbana-Champaign, IL, USA. (reposiTUm)

843.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2007).
Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 386–389), Montreux, Austria. (reposiTUm)

842.   Ertl, O., Heitzinger, C., Selberherr, S. (2007).
Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 417–420), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_101 (reposiTUm)

841.   Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S. (2007).
Electro-Biological Simulation Using a Web Front-End.
In Proceedings European Simulation and Modeling Conference (pp. 493–495), Malta. (reposiTUm)

840.   Ceric, H., Selberherr, S. (2007).
Electromigration Modeling for Interconnect Structures in Microelectronics.
In ECS Transactions (pp. 295–304), Ouro Preto. (reposiTUm)

839.   Ceric, H., Selberherr, S. (2007).
Electromigration in Interconnect Structures of Microelectronic Circuits.
In Microelectronics, Electronics, and Electronic Technologies (MEET) (pp. 23–28), Opatija. (reposiTUm)

838.   Sverdlov, V., Kosina, H. (2007).
Electron Subband Dispersions in Ultra-Thin Silicon Films From a Two-Band K·p Theory.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 92–93), Urbana-Champaign, IL, USA. (reposiTUm)

837.   Karaivanova, A., Atanassov, E., Gurov, T., Nedjalkov, M., Vasileska, D., Raleva, K. (2007).
Electron-Phonon Interaction in Nanowires: A Monte Carlo Study of the Effect of the Field.
In Proceedings of the Seminar on Monte Carlo Methods (MCM) (p. 23), Reading. (reposiTUm)

836.   Sverdlov, V. (2007).
Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures.
In 7th International Conference Frontiers of Josephson Physics and Nanoscience (pp. 63–64), Palinuro, Italy. (reposiTUm)

835.   Gös, W., Grasser, T. (2007).
First-Principles Investigation on Oxide Trapping.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 157–160), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_38 (reposiTUm)

834.   Grasser, T., Vasicek, M., Wagner, M. (2007).
Higher-Order Moment Models for Engineering Applications.
Equadiff, Wien, Austria. (reposiTUm)

833.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Hydrodynamic Modeling of AlGaN/GaN HEMTs.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_65 (reposiTUm)

832.   Kosina, H., Sverdlov, V. (2007).
Impact of Strain and Defects on CMOS Process and Device Performance.
15thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece, EU. (reposiTUm)

831.   Sverdlov, V., Ungersböck, S., Kosina, H. (2007).
Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs.
In EUROSOI 2007 (pp. 39–40), Granadea, Spanien, Austria. (reposiTUm)

830.   Sverdlov, V., Karlowatz, G., Ungersboeck, E., Kosina, H. (2007).
Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_79 (reposiTUm)

829.   Ceric, H., Nentchev, A., Langer, E., Selberherr, S. (2007).
Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 37–40), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_9 (reposiTUm)

828.   Hollauer, C., Ceric, H., van Barel, G., Witvrouw, A., Selberherr, S. (2007).
Investigation of Intrinsic Stress Effects in Cantilever Structures.
In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM) (p. 4), Bangkok, Thailand. (reposiTUm)

827.   Triebl, O., Grasser, T. (2007).
Investigation of Vector Discretization Schemes for Box Volume Methods.
In NSTI Nanotech Proceedings (pp. 61–64), Anaheim, Austria. (reposiTUm)

826.   Karner, M., Baumgartner, O., Pourfath, M., Vasicek, M., Kosina, H. (2007).
Investigation of a MOSCAP Using NEGF.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

825.   Heitzinger, C., Ringhofer, C., Selberherr, S. (2007).
Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-Scale Model.
In 211th ECS Meeting, Chicago. (reposiTUm)

824.   Heinzl, R., Mach, G., Schwaha, P., Selberherr, S. (2007).
Labtool - A Managing Software for Computer Courses.
In Proceedings European Simulation and Modeling Conference (pp. 488–492), Malta. (reposiTUm)

823.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730422 (reposiTUm)

822.   Grabinski, W., Grasser, T., Gildenblat, G., Smit, G., Bucher, M., Aarts, A., Tajic, A., Chauhan, Y., Napieralski, A., Fjeldly, T., Iniguez, B., Iannaccone, G., Kayal, M., Posch, W., Wachutka, G., Prégaldiny, F., Lallement, C., Lemaitre, L. (2007).
MOS-AK: Open Compact Modeling Forum.
In The 4th International Workshop on Compact Modeling (pp. 1–11), Pacifico Yokohama, Japan. (reposiTUm)

821.   Li, L., Meller, G., Kosina, H. (2007).
Micro and Macroscopic Modeling of Charge Flows in Molecularly Disordered Organic Semiconductors.
SISPAD 2007 Companion Workshop “Organic Electronics,” Wien, Austria. (reposiTUm)

820.   Selberherr, S. (2007).
Microeletronics Modeling.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

819.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007).
Modeling of Electron Transport in GaN-Based Materials and Devices.
In AIP Conference Proceedings, Vol. 893 (pp. 1399–1400). (reposiTUm)

818.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007).
Modeling of Electron Transport in GaN-based Materials and Devices.
In 28th International Conference on the Physics of Semiconductors (p. 244), Vienna, Austria, Austria. (reposiTUm)

817.   Vasicek, M., Karner, M., Ungersboeck, E., Wagner, M., Kosina, H., Grasser, T. (2007).
Modeling of Macroscopic Transport Parameters in Inversion Layers.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 201–204), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_48 (reposiTUm)

816.   Heinzl, R., Schwaha, P., Giani, C., Selberherr, S. (2007).
Modeling of Non-Trivial Data-Structures With a Generic Scientific Simulation Environment.
In Proceedings of the 4th High-End Visualization Workshop (pp. 5–13), Obergurgl, Austria. (reposiTUm)

815.   Ceric, H., Langer, E., Selberherr, S. (2007).
Modeling of Residual Stresses in Thin Metal Films.
In 9th International Workshop on Stress-Induced Phenomena in Metallization (p. 18), Dresden. (reposiTUm)

814.   Heinzl, R., Schwaha, P., Selberherr, S. (2007).
Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design.
In Proceedings of the 2nd ICSOFT 2007 (pp. 100–107), Barcelona. (reposiTUm)

813.   Palankovski, V., Wagner, M., Heiss, W. (2007).
Monte Carlo Simulation of Electron Transport in PbTe.
In The 13thInternational Conference on Narrow Gap Semiconductors (p. 50), Guildford. (reposiTUm)

812.   Vitanov, S., Palankovski, V. (2007).
Monte Carlo Study of Transport Properties of InN.
In The 13th International Conference on Narrow Gap Semiconductors (p. 99), Guildford. (reposiTUm)

811.   Grasser, T., Kaczer, B. (2007).
Negative Bias Temperature Instability: Recoverable Versus Permanent Degradation.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 127–130), Montreux, Austria. (reposiTUm)

810.   Vitanov, S., Palankovski, V. (2007).
Normally-Off AlGaN/GaN HEMTs With InGaN Cap Layer: A Theoretical Study.
In 2007 International Semiconductor Device Research Symposium, College Park, MD, USA. https://doi.org/10.1109/isdrs.2007.4422390 (reposiTUm)

809.   Nentchev, A., Selberherr, S. (2007).
On the Magnetic Field Extraction for On-Chip Inductance Calculation.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 349–352), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_84 (reposiTUm)

808.   Vasicek, M., Cervenka, J., Karner, M., Wagner, M., Grasser, T. (2007).
Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 96–97), Urbana-Champaign, IL, USA. (reposiTUm)

807.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Predictive Simulation of AlGaN/GaN HEMTs.
In 2007 IEEE Compound Semiconductor Integrated Circuits Symposium, San Antonio. https://doi.org/10.1109/csics07.2007.31 (reposiTUm)

806.   Sverdlov, V., Kosina, H., Grasser, T., Selberherr, S. (2007).
Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730425 (reposiTUm)

805.   Nedjalkov, M., Vasileska, D. (2007).
Semi-Discrete 2D Wigner-Particle Approach.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 122–123), Urbana-Champaign, IL, USA. (reposiTUm)

804.   Schwaha, P., Schwaha, M., Heinzl, R., Ungersböck, S., Selberherr, S. (2007).
Simulation Methodologies for Scientific Computing - Modern Application Design.
In Proceedings of the 2nd ICSOFT 2007 (pp. 270–276), Barcelona. (reposiTUm)

803.   Grasser, T., Kaczer, B., Hehenberger, P., Gös, W., Connor, R., Reisinger, H., Gustin, W., Schlünder, C. (2007).
Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability.
In 2007 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2007.4419069 (reposiTUm)

802.   Selberherr, S. (2007).
Strain Engineering for Nanoscale CMOS Transistors.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

801.   Orio, R., Ceric, H., Selberherr, S. (2007).
Strain-Induced Anisotropy of Electromigration in Copper Interconnect.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

800.   Benger, W., Ritter, G., Heinzl, R. (2007).
The Concepts of VISH.
In Proceedings of the 4th High-End Visualization Workshop (pp. 28–41), Obergurgl, Austria. (reposiTUm)

799.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance.
In International Symposium on Advanced Nanodevices and Nanotechnology (pp. 37–38), Waikoloa, Hawaii. (reposiTUm)

798.   Pourfath, M., Kosina, H. (2007).
The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 309–312), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_74 (reposiTUm)

797.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 239–242), Montreux, Austria. (reposiTUm)

796.   Grasser, T., Gös, W., Sverdlov, V., Kaczer, B. (2007).
The Universality of NBTI Relaxation and Its Implications for Modeling and Characterization.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 268–280), Phoenix. (reposiTUm)

795.   Nedjalkov, M., Vasileska, D., Raleva, K. (2007).
Thermal Relaxation of Non-Equilibrium Electrons in Nanowires.
In 8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics, Ohrid, Macedonia. (reposiTUm)

794.   Cervenka, J., Ceric, H., Ertl, O., Selberherr, S. (2007).
Three-Dimensional Sacrificial Etching.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 433–436), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_105 (reposiTUm)

793.   Cervenka, J., Ceric, H., Selberherr, S. (2007).
Three-Dimensional Simulation of Sacrificial Etching.
In Smart Sensors, Actuators, and MEMS III (pp. 452–460), Gran Canaria, Spain. https://doi.org/10.1117/12.721979 (reposiTUm)

792.   Cervenka, J., Ceric, H., Selberherr, S. (2007).
Three-Dimensional Simulation of Sacrificial Etching.
SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain, EU. (reposiTUm)

791.   Ceric, H., Langer, E., Selberherr, S. (2007).
Three-Phase Model for the Volmer-Weber Crystal Growth.
In Nanostructures and Carrier Interactions (p. 127), Atsugi, Japan. (reposiTUm)

790.   Nentchev, A., Selberherr, S. (2007).
Three-Dimensional On-Chip Inductance and Resistance Extraction.
In Proceedings of the 20th annual conference on Integrated circuits and systems design - SBCCI '07, Rio de Janeiro. https://doi.org/10.1145/1284480.1284540 (reposiTUm)

789.   Sverdlov, V., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Two-Band k.p Model for the Conduction Band in Silicon.
In Proceedings European Simulation and Modeling Conference (pp. 220–224), Malta. (reposiTUm)

788.   Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2007).
Two-Band K·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

787.   Schwaha, P., Giani, C., Heinzl, R., Selberherr, S. (2007).
Visualization of Polynomials Used in Series Expansions.
In Proceedings of the 4th High-End Visualization Workshop (pp. 139–148), Obergurgl, Austria. (reposiTUm)

786.   Nedjalkov, M., Kosina, H., Vasileska, D. (2007).
Wigner Ensemble Monte Carlo: Challanges of 2D Nano-Device Simulation.
In Proceedings of the International Conference on Large-Scale Scientific Computing (LSSC) (pp. B-41–B-42), Sozopol, Bulgaria. (reposiTUm)

785.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters.
In 2006 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2006.346739 (reposiTUm)

784.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T. (2006).
A Computational Framework for Topological Operations.
In Proceedings of the PARA Conference (p. 57), Umea. (reposiTUm)

783.   Movahhedi, M., Nentchev, A., Ceric, H., Abdipour, A., Selberherr, S. (2006).
A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method.
In European Microwave Week 2006 Book of Abstracts (pp. 1–4), Manchester. (reposiTUm)

782.   Riedling, K., Selberherr, S. (2006).
A Flexible Web-Based Publication Database.
In Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006) (pp. 262–267), Orlando, Florida, USA. (reposiTUm)

781.   Schwaha, P., Heinzl, R., Spevak, M., Grasser, T. (2006).
A Generic Approach to Scientific Computing.
In ICCAM 2006 Abstracts of Talks (p. 137), Leuven. (reposiTUm)

780.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S. (2006).
A Generic Discretization Library.
In OOPSLA Proceedings (pp. 95–100), Portland. (reposiTUm)

779.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD.
In NSTI Nanotech Proceedings (pp. 526–529), Anaheim, Austria. (reposiTUm)

778.   Heinzl, R., Spevak, M., Schwaha, P., Selberherr, S. (2006).
A Generic Topology Library.
In OOPSLA Proceedings (pp. 85–93), Portland. (reposiTUm)

777.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
A High Performance Generic Scientific Simulation Environment.
In Proceedings of the PARA Conference (p. 61), Umea. (reposiTUm)

776.   Vitanov, S., Nedjalkov, M., Palankovski, V. (2006).
A Monte Carlo Model of Piezoelectric Scattering in GaN.
In Sixth International Conference on Numerical Methods and Applications Abstracts (p. B-75), Borovets. (reposiTUm)

775.   Holzer, S., Wagner, M., Friembichler, L., Langer, E., Grasser, T., Selberherr, S. (2006).
A Multi-Purpose Optimization Framework for TCAD Applications.
In ICCAM 2006 Abstracts of Talks (p. 76), Leuven. (reposiTUm)

774.   Suvorov, V., Hössinger, A., Djuric, Z. (2006).
A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 3–4), Urbana-Champaign, IL, USA. (reposiTUm)

773.   Heinzl, R., Spevak, M., Schwaha, P. (2006).
A Novel High Performance Approach for Technology Computer Aided Design.
In Proceedings of the 12th Conference Student EEICT 2006 (pp. 446–450), Brünn. (reposiTUm)

772.   Karner, M., Wagner, M., Grasser, T., Kosina, H. (2006).
A Physically Based Quantum Correction Model for DG MOSFETs.
In San Francisco 2006 MRS Meeting Abstracts (pp. 104–105), San Francisco. (reposiTUm)

771.   Wittmann, R., Uppal, S., Hössinger, A., Cervenka, J., Selberherr, S. (2006).
A Study of Boron Implantation Into High Ge Content SiGe Alloys.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

770.   Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S., Grasser, T., Selberherr, S. (2006).
A Tensorial High-Field Electron Mobility Model for Strained Silicon.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73), Princeton. (reposiTUm)

769.   Riedling, K., Selberherr, S. (2006).
A Web-Based Publication Database for Performance Evaluation and Research Documentation.
In Proceedings of the ICEE 2006 (pp. R2F-5–R2F-10), San Juan, Puerto Rico. (reposiTUm)

768.   Selberherr, S. (2006).
About Models and Simulation of Nano-Scale Devices.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

767.   Palankovski, V. (2006).
Advanced Device Modeling for High Frequency Applications.
Compact Modeling for RF/Microwave Applications (CMRF), Maastricht, EU. (reposiTUm)

766.   Schwaha, P., Heinzl, R., Spevak, M., Grasser, T. (2006).
Advanced Equation Processing for TCAD.
In Proceedings of the PARA Conference (p. 64), Umea. (reposiTUm)

765.   Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., Selberherr, S. (2006).
An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications.
In Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems (pp. 239–244), Nice. (reposiTUm)

764.   Karlowatz, G., Ungersböck, S., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

763.   Dhar, S., Ungersboeck, E., Kosina, H., Grasser, T., Selberherr, S. (2006).
Analytical Modeling of Electron Mobility in Strained Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282833 (reposiTUm)

762.   Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., Selberherr, S. (2006).
Applications of Two- And Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 4), Tehran. (reposiTUm)

761.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T. (2006).
Automatic Linearization Using Functional Programming for Scientific Computing.
In ICCAM 2006 Abstracts of Talks (p. 147), Leuven. (reposiTUm)

760.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Comparative Study of Low-Field Mobilities in Double- And Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 17–18), Honolulu. (reposiTUm)

759.   Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T. (2006).
Comparison of Deposition Models for TEOS CVD Process.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts (pp. 158–159), Catania. (reposiTUm)

758.   Heinzl, R., Schwaha, P., Spevak, M., Grasser, T. (2006).
Concepts for High Performance Generic Scientific Computing.
In 5th Mathmod Vienna Proceedings (pp. 4-1–4-9), Wien, Austria. (reposiTUm)

757.   Karner, M., Gehring, A., Holzer, S., Wagner, M., Kosina, H. (2006).
Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 161–162), Honolulu. (reposiTUm)

756.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Current Flow in Upcoming Microelectronic Devices.
In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 3–8), Playa del Carmen. (reposiTUm)

755.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Current Transport in Nanoelectronic Semiconductor Devices.
In Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics (pp. 490–495), Singapore. (reposiTUm)

754.   Wagner, M., Span, G., Holzer, S., Grasser, T. (2006).
Design Optimization of Large Area Si/SiGe Thermoelectric Generators.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282918 (reposiTUm)

753.   NOTFOUNT AUTHORS (2006).
Dissipative Transport in CNTFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 345–346), Urbana-Champaign, IL, USA. (reposiTUm)

752.   Li, L., Meller, G., Kosina, H. (2006).
Doping Dependent Conductivity in Organic Semiconductors.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282872 (reposiTUm)

751.   Karlowatz, G., Wessner, W., Kosina, H. (2006).
Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.
In 5th Mathmod Vienna Proceedings (pp. 4-1–4-6), Wien, Austria. (reposiTUm)

750.   Karner, M., Gehring, A., Holzer, S., Kosina, H. (2006).
Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 572–577), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_65 (reposiTUm)

749.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282834 (reposiTUm)

748.   Meller, G., Li, L., Holzer, S., Kosina, H. (2006).
Electron Kinetics in Disordered Organic Semiconductors.
In Abstracts 2nd Annual Organic Microelectronics Workshop (p. 42), Toronto. (reposiTUm)

747.   Dhar, S., Ungersböck, S., Kosina, H., Grasser, T., Selberherr, S. (2006).
Electron Mobility Model for #Lt110> Stressed Si Including Strain-Dependent Mass.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 153–154), Honolulu. (reposiTUm)

746.   Pourfath, M., Kosina, H. (2006).
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 578–585), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_66 (reposiTUm)

745.   Nedjalkov, M., Gurov, T., Kosina, H., Vasileska, D., Palankovski, V. (2006).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 149–156), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_15 (reposiTUm)

744.   Gurov, T., Atanassov, E., Dimov, I., Palankovski, V. (2006).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part II: Stochastic Approach and Grid Implementation.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 157–163), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_16 (reposiTUm)

743.   Li, L., Meller, G., Kosina, H. (2006).
Field-Dependent Effective Transport Energy in Organic Semiconductor.
In 3rd Meeting on Molecular Electronics (p. T2-PC18), Grenoble. (reposiTUm)

742.   Palankovski, V., Vitanov, S., Quay, R. (2006).
Field-Plate Optimization of AlGaN/GaN HEMTs.
In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, San Antonio. https://doi.org/10.1109/csics.2006.319926 (reposiTUm)

741.   Karlowatz, G., Ungersboeck, E., Wessner, W., Kosina, H. (2006).
Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282839 (reposiTUm)

740.   Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S. (2006).
Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices.
In Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems (pp. 235–238), Nice. (reposiTUm)

739.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
High Performance Process and Device Simulation With a Generic Environment.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 4), Tehran. (reposiTUm)

738.   Palankovski, V., Marchlewski, A., Ungersböck, S., Selberherr, S. (2006).
Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices.
In 5th Mathmod Vienna Proceedings (pp. 14-1–14-9), Wien, Austria. (reposiTUm)

737.   Wittmann, R., Puchner, H., Ceric, H., Selberherr, S. (2006).
Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 41–44), Singapore. (reposiTUm)

736.   Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R. (2006).
Influence of Interface and Oxide Traps on Negative Bias Temperature Instability.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 163–164), Honolulu. (reposiTUm)

735.   Ferrari, G., Jacoboni, C., Nedjalkov, M., Asenov, A. (2006).
Introducing Energy Broadening in Semiclassical Monte Carlo Simulations.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 17–18), Urbana-Champaign, IL, USA. (reposiTUm)

734.   Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R. (2006).
Investigation of NBTI Recovery During Measurement.
In San Francisco 2006 MRS Meeting Abstracts (pp. 110–111), San Francisco. (reposiTUm)

733.   Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T. (2006).
Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance.
In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 365–370), Playa del Carmen. (reposiTUm)

732.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

731.   Sverdlov, V., Ungersböck, S., Kosina, H. (2006).
Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions.
In NATO Advanced Research Workshop Conference Abstracts (pp. 77–78), Sudak. (reposiTUm)

730.   Sverdlov, V., Ungersböck, S., Kosina, H. (2006).
Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations.
In EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 133–134), Granadea, Spanien, Austria. (reposiTUm)

729.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling of Advanced Semiconductor Devices.
In ECS Transactions (pp. 207–216), Ouro Preto. (reposiTUm)

728.   Grasser, T., Gös, W., Kaczer, B. (2006).
Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 5–10), S. Lake Tahoe. (reposiTUm)

727.   Kosina, H. (2006).
Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices.
In Program Book NANO KOREA 2006, Seoul. (reposiTUm)

726.   Hollauer, C., Ceric, H., Selberherr, S. (2006).
Modeling of Intrinsic Stress Effects in Deposited Thin Films.
In Eurosensors 20th Anniversary Vol. 1 (pp. 324–325), Göteborg, Sweden. (reposiTUm)

725.   Grasser, T., Selberherr, S. (2006).
Modeling of Negative Bias Temperature Instability.
In Abstracts 7th Symposium Diagnostics, Yield: Advanced Silicon Devices and Technologies for ULSI ERA (pp. 1–2), Warszawa. (reposiTUm)

724.   Gurov, T., Atanassov, E., Nedjalkov, M., Palankovski, V. (2006).
Monte Carlo Method for Modeling of Electron Transport in Quantum Wires.
In 5th Mathmod Vienna Proceedings (pp. 13-1–13-8), Wien, Austria. (reposiTUm)

723.   Wittmann, R., Hössinger, A., Cervenka, J., Uppal, S., Selberherr, S. (2006).
Monte Carlo Simulation of Boron Implantation Into (100) Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282914 (reposiTUm)

722.   Dhar, S., Ungersböck, S., Nedjalkov, M., Palankovski, V. (2006).
Monte Carlo Simulation of the Electron Mobility in Strained Silicon.
In The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2 (pp. 169–173), Sozopol. (reposiTUm)

721.   Ceric, H., Cervenka, J., Langer, E., Selberherr, S. (2006).
Moving Boundary Applications in Process and Interconnect TCAD.
In Proceedings Mini-Workshop on Anisotropic Motion Laws (pp. 13–16), Oberwolfach. (reposiTUm)

720.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2006).
Multidimensional and Multitopological TCAD With a Generic Scientific Simulation Environment.
In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 173–176), Playa del Carmen. (reposiTUm)

719.   Kosina, H. (2006).
Nanoelectronic Device Simulation Based on the Wigner Function Formalism.
In IWTND06 Workbook (p. 26), Aizu-Wakamatsu. (reposiTUm)

718.   Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R. (2006).
Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts (pp. 96–97), Catania. (reposiTUm)

717.   Vitanov, P., LeQuang, N., Harizanova, A., Nichiporuk, O., Ivanova, T., Vitanov, S., Palankovski, V. (2006).
New Surface Passivation and Local Contacts on the Backside for Thin Mc-Si Solar Cells.
In World Renewable Energy Congress IX Book of Abstracts (p. 564), Firenze. (reposiTUm)

716.   Karner, M., Holzer, S., Vasicek, M., Gös, W., Wagner, M., Kosina, H., Selberherr, S. (2006).
Numerical Analysis of Gate Stacks.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

715.   Kosina, H. (2006).
Numerical Simulation of Quantum Devices Utilizing the Wigner Function Formalism.
Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano, Austria. (reposiTUm)

714.   Pourfath, M., Kosina, H. (2006).
On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors.
In Proceedings Trends in Nanotechnology (p. 2), Segovia, Austria. (reposiTUm)

713.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 5), Tehran. (reposiTUm)

712.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimal Design for Carbon Nanotube Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 210–213), Montreux, Austria. (reposiTUm)

711.   NOTFOUNT AUTHORS (2006).
Optimization Issue in Interconnect Analysis.
In 2006 25th International Conference on Microelectronics, Beograd. https://doi.org/10.1109/icmel.2006.1650994 (reposiTUm)

710.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimizing the Performance of Carbon Nanotube Transistors.
In 2006 Sixth IEEE Conference on Nanotechnology, Nagoya, Austria. https://doi.org/10.1109/nano.2006.247702 (reposiTUm)

709.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Orientation Dependence of the Low Field Mobility in Double- And Single-Gate SOI FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 178–181), Montreux, Austria. (reposiTUm)

708.   Li, L., Meller, G., Kosina, H. (2006).
Percolation Current in Organic Semiconductors.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 161–162), Urbana-Champaign, IL, USA. (reposiTUm)

707.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T., Selberherr, S. (2006).
Performance Analysis for High-Precision Interconnect Simulation.
In The 2006 European Simulation and Modelling Conference (pp. 113–116), Porto, Austria. (reposiTUm)

706.   Heinzl, R., Schwaha, P., Spevak, M., Grasser, T. (2006).
Performance Aspects of a DSEL for Scientific Computing With C++.
In Proceedings of the POOSC Conference (pp. 37–41), Nantes. (reposiTUm)

705.   Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2006).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 141–142), Urbana-Champaign, IL, USA. (reposiTUm)

704.   Sheikholeslami, A., Selberherr, S., Parhami, F., Puchner, H. (2006).
Planarization of Passivation Layers During Manufacturing Processes of Image Sensors.
In Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 35–36), Singapore. (reposiTUm)

703.   Sheikholeslami, A., Parhami, F., Puchner, H., Selberherr, S. (2006).
Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers.
In International Conference on Nanoscience and Technology (ICNT 2006) (pp. 163–164), Basel. (reposiTUm)

702.   Wagner, M., Span, G., Holzer, S., Triebl, O., Grasser, T. (2006).
Power Output Improvement of SiGe Thermoelectric Generators.
In Meeting Abstracts 2006 Joint International Meeting (p. 1), Honolulu, Austria. (reposiTUm)

701.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, K. (2006).
Process and Device Simulation With a Generic Scientific Simulation Environment.
In 2006 25th International Conference on Microelectronics, Beograd. https://doi.org/10.1109/icmel.2006.1650996 (reposiTUm)

700.   NOTFOUNT AUTHORS (2006).
Quantum Correction for DG MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 87–88), Urbana-Champaign, IL, USA. (reposiTUm)

699.   Sverdlov, V., Kosina, H., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2006).
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 594–601), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_68 (reposiTUm)

698.   Sverdlov, V., Grasser, T. (2006).
Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 29–30), Urbana-Champaign, IL, USA. (reposiTUm)

697.   Meller, G., Li, L., Holzer, S., Kosina, H. (2006).
Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems.
In Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 1–2), Singapore. (reposiTUm)

696.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T. (2006).
Simulation of Microelectronic Structures Using a Posteriori Error Estimation and Mesh Optimization.
In 5th Mathmod Vienna Proceedings (pp. 5-1–5-8), Wien, Austria. (reposiTUm)

695.   Ceric, H., Hollauer, C., Selberherr, S. (2006).
Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 359–363), Singapore. (reposiTUm)

694.   Karner, M., Ungersboeck, E., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2006).
Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282898 (reposiTUm)

693.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Strain Engineering for CMOS Devices.
In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3) (pp. 124–127), Peking, Austria. (reposiTUm)

692.   Triebl, O., Enichlmair, H. (2006).
TCAD Modeling of Negative Bias Temperature Instability.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282902 (reposiTUm)

691.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2006).
The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282873 (reposiTUm)

690.   Ungersböck, S., Kosina, H., Selberherr, S. (2006).
The Influence of Stress on Inversion Layer Mobility.
In Abstracts Advanced Heterostructure Workshop (p. TH-2), Kona. (reposiTUm)

689.   Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Wong, P., Nishi, Y., Saraswat, K. (2006).
Theoretical Investigation of Performance in Uniaxially- And Biaxially-Strained Si, SiGe and Ge Double-Gate P-MOSFETs.
In 2006 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2006.346938 (reposiTUm)

688.   Span, G., Wagner, M., Holzer, S., Grasser, T. (2006).
Thermoelectric Power Conversion Using Generation of Electron-Hole Pairs in Large Area P-N Junctions.
In International Conference on Thermoelectrics (pp. 23–28), Vienna, Austria. (reposiTUm)

687.   Wagner, M., Span, G., Grasser, T. (2006).
Thermoelectric Power Generation Using Large Area Si/SiGe Pn-Junctions With Varying Ge-Content.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 216–217), Princeton. (reposiTUm)

686.   Ceric, H., Hollauer, C., Selberherr, S. (2006).
Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282869 (reposiTUm)

685.   Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., Selberherr, S. (2006).
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 154–157), Singapore. (reposiTUm)

684.   Selberherr, S. (2006).
Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices.
In Abstracts of Workshop on Semiconductors and Micro-, Nano-Technology (pp. 12–15), Campinas. (reposiTUm)

683.   NOTFOUNT AUTHORS (2006).
Tunneling-CNTFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 291–292), Urbana-Champaign, IL, USA. (reposiTUm)

682.   Vitanov, P., Vitanov, S., Palankovski, V. (2006).
Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells.
In 21st European Photovoltaic Solar Energy Conference (pp. 1475–1478), Dresden. (reposiTUm)

681.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2006).
Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs.
In TARGET Days 2006 Book of Proceedings (pp. 81–84), Frascati. (reposiTUm)

680.   Palankovski, V., Hristov, M., Philippov, P. (2006).
Two-Dimensional Physical AC-Simulation of GaAs HBTs.
In The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2 (pp. 164–168), Sozopol. (reposiTUm)

679.   NOTFOUNT AUTHORS (2006).
Ultrafast Wigner Transport in Quantum Wires.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 285–286), Urbana-Champaign, IL, USA. (reposiTUm)

678.   Karner, M., Gehring, A. (2006).
VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 255–256), Urbana-Champaign, IL, USA. (reposiTUm)

677.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2006).
VSP-A Gate Stack Analyzer.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (pp. 101–102), Catania. (reposiTUm)

676.   Triebl, O., Grasser, T. (2006).
Vector Discretization Schemes Based on Unstructured Neighbourhood Information.
In CAS 2006 Proceedings Vol. 2 (pp. 337–340), Sinaia. (reposiTUm)

675.   Kosina, H., Sverdlov, V., Grasser, T. (2006).
Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282908 (reposiTUm)

674.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 95–96), Pisa, Austria. (reposiTUm)

673.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T. (2005).
A Novel Technique for Coupling Three Dimensional Mesh Adaption With an a Posteriori Error Estimator.
In 2005 PhD Research in Microelectronics and Electronics (pp. 175–178), Lausanne, Austria. (reposiTUm)

672.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S., Selberherr, S. (2005).
A Physically-Based Electron Mobility Model for Strained Si Devices.
In NSTI Nanotech Technical Proceedings (pp. 13–16), Anaheim, Austria. (reposiTUm)

671.   Heinzl, R., Schwaha, P., Spevak, M., Grasser, T. (2005).
Adaptive Mesh Generation for TCAD With Guaranteed Error Bounds.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 425–429), Porto, Austria. (reposiTUm)

670.   Li, L., Kosina, H. (2005).
An Analytical Model for Organic Thin Film Transistors.
In Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 571–574), Hong Kong, Austria. (reposiTUm)

669.   Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S. (2005).
Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201504 (reposiTUm)

668.   Ceric, H., Deshpande, V., Hollauer, C., Holzer, S., Grasser, T., Selberherr, S. (2005).
Comprehensive Analysis of Vacancy Dynamics Due to Electromigration.
In Proceedings of the 12th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 100–103), Singapore. (reposiTUm)

667.   Schwaha, P., Heinzl, R., Spevak, M., Grasser, T. (2005).
Coupling Three-Dimensional Mesh Adaptation With an a Posteriori Error Estimator.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201516 (reposiTUm)

666.   Gehring, A., Selberherr, S. (2005).
Current Transport Models for Nano-Scale Semiconductor Devices.
In Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics (pp. 366–371), Orlando, Austria. (reposiTUm)

665.   Selberherr, S. (2005).
Current Transport in Upcoming Microelectronic Devices.
IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm)

664.   Angelov, G., Palankovski, V., Hristov, M. (2005).
Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators.
In ISSE 2005, 28th International Spring Seminar on Electronics Technology, Conference Program and Abstracts (pp. 110–111), Wiener Neustadt, Austria. (reposiTUm)

663.   NOTFOUNT AUTHORS (2005).
Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators.
In 28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005., Wiener Neustadt, Austria. https://doi.org/10.1109/isse.2005.1491077 (reposiTUm)

662.   Spevak, M., Grasser, T. (2005).
Discretisation Schemes for Macroscopic Transport Equations on Non-Cartesian Coordinate Systems.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 474–478), Porto, Austria. (reposiTUm)

661.   Wessner, W., Ceric, H., Cervenka, J., Selberherr, S. (2005).
Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201494 (reposiTUm)

660.   Karner, M., Gehring, A., Kosina, H. (2005).
Efficient Calculation of Life Time Based Direct Tunneling Through Stacked Dielectrics.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 97–98), Pisa, Austria. (reposiTUm)

659.   Karner, M., Gehring, A., Kosina, H., Selberherr, S. (2005).
Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201466 (reposiTUm)

658.   Karner, M., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2005).
Efficient Calculation of Quasi-Bound State Tunneling Through Stacked Dielectrics.
In 208th ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

657.   Wessner, W., Ceric, H., Hollauer, C., Langer, E., Selberherr, S. (2005).
Electromigration Reliability TCAD Solutions.
SEMICON Europa2005, München, Austria. (reposiTUm)

656.   Jungemann, C., Grasser, T., Neinhüs, B., Meinerzhagen, B. (2005).
Failure of Macroscopic Transport Models in Nanoscale Devices Near Equilibrium.
In NSTI Nanotech Technical Proceedings (pp. 25–28), Anaheim, Austria. (reposiTUm)

655.   Pourfath, M., Park, W., Kosina, H., Selberherr, S. (2005).
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 50–51), Sozopol, Bulgaria. (reposiTUm)

654.   Gurov, T., Atanasov, E., Dimov, I., Palankovski, V., Smirnov, S. (2005).
Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation.
In Book of Abstracts (pp. 26–27), Sozopol, Bulgaria. (reposiTUm)

653.   Nedjalkov, M., Gurov, T., Kosina, H., Vasileska, D., Palankovski, V. (2005).
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (p. 46), Sozopol, Bulgaria. (reposiTUm)

652.   Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T. (2005).
Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 469–473), Porto, Austria. (reposiTUm)

651.   Heinzl, R., Grasser, T. (2005).
Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201510 (reposiTUm)

650.   Pourfath, M., Kosina, H., Cheong, B., Park, W. (2005).
Geometry-Dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201480 (reposiTUm)

649.   Pourfath, M., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
High Performance Carbon Nanotube Field Effect Transistor With the Potential for Tera Level Integration.
In ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference (pp. 95–98), Bologna, Austria. (reposiTUm)

648.   Grasser, T. (2005).
Higher-Order Moment Models for Engineering Applications.
Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano, Austria. (reposiTUm)

647.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices.
In NSTI Nanotech Technical Proceedings (pp. 45–48), Anaheim, Austria. (reposiTUm)

646.   Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S. (2005).
Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm P-Mosfet.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 99–102), S. Lake Tahoe. (reposiTUm)

645.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 541–544), Montreux, Austria. (reposiTUm)

644.   Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., Selberherr, S. (2005).
Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process.
In 2005 PhD Research in Microelectronics and Electronics (pp. 279–282), Lausanne, Austria. (reposiTUm)

643.   Hollauer, C., Holzer, S., Ceric, H., Wagner, S., Grasser, T., Selberherr, S. (2005).
Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts.
In Proceedings of The Sixth International Congress on Thermal Stresses (pp. 637–640), Wien, Austria. (reposiTUm)

642.   Meller, G., Li, L., Kosina, H. (2005).
Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors.
In Second Meeting on Molecular Electronics (p. 107), Grenoble. (reposiTUm)

641.   Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S. (2005).
Level Set Method Based General Topography Simulator and Its Application in Interconnect Processes.
In ULIS 2005 6th International Conference on Ultimate Integration of Silicon (pp. 139–142), Bologna, Austria. (reposiTUm)

640.   Holzer, S., Selberherr, S. (2005).
Material Parameter Identification for Interconnect Analysis.
In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 635–641), New Dehli. (reposiTUm)

639.   Ceric, H., Hollauer, C., Selberherr, S. (2005).
Microstructure and Stress Aspects of Electromigration Modeling.
In 8th International Workshop on Stress-Induced Phenomena in Metallization (p. P 17), Dresden. (reposiTUm)

638.   Grasser, T. (2005).
Mixed Mode Device/Circuit Simulation.
MOS-AK ESSDERC Companion Workshop, Grenoble, Austria. (reposiTUm)

637.   Sverdlov, V., Kosina, H., Selberherr, S. (2005).
Modeling Current Transport in Ultra-Scaled Field Effect Transistors.
In Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 385–390), Hong Kong, Austria. (reposiTUm)

636.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Modeling of Tunneling Currents for Highly Degraded CMOS Devices.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201512 (reposiTUm)

635.   Dhar, S., Karlowatz, G., Ungersböck, S., Kosina, H., Selberherr, S. (2005).
Modeling of Velocity-Field Characteristics in Strained Silicon.
In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 1060–1063), New Dehli. (reposiTUm)

634.   Wittmann, R., Hössinger, A., Selberherr, S. (2005).
Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201505 (reposiTUm)

633.   Meller, G., Li, L., Kosina, H. (2005).
Monte Carlo Simulation of Molecularly Doped Organic Semiconductors.
In 3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts (pp. 44–45), Winterthur, Austria. (reposiTUm)

632.   Ungersböck, S., Kosina, H. (2005).
Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 10–11), Pisa, Austria. (reposiTUm)

631.   Dhar, S., Karlowatz, G., Ungersboeck, E., Kosina, H. (2005).
Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201513 (reposiTUm)

630.   Karner, M., Gehring, A., Holzer, S., Kosina, H. (2005).
On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling.
In Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC) (pp. 33–34), Sozopol, Bulgaria. (reposiTUm)

629.   Nentchev, A., Sabelka, R., Wessner, W., Selberherr, S. (2005).
On-Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 420–424), Porto, Austria. (reposiTUm)

628.   Wagner, M., Karner, M., Grasser, T. (2005).
Quantum Correction Models for Modern Semiconductor Devices.
In Proceedings of the XIII International Workshop on Semiconductor Devices (pp. 458–461), New Dehli. (reposiTUm)

627.   Kosina, H., Sverdlov, V., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2005).
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 36–37), Sozopol, Bulgaria. (reposiTUm)

626.   Gehring, A., Sverdlov, V., Kosina, H., Selberherr, S. (2005).
Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach.
In EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 71–72), Granada, Austria. (reposiTUm)

625.   Kinkhabwala, Y., Sverdlov, V., Likharev, K. (2005).
Quasi-Continuous Charge Transfer via 2D Hopping.
APS March Meeting, Los Angeles/USA, Austria. (reposiTUm)

624.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
Rigorous Modeling of Carbon Nanotube Field Effect Transistors.
In Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices (pp. 155–156), Maui. (reposiTUm)

623.   Sverdlov, V. (2005).
Shot Noise Suppression and Enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays.
In 4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology, High Technology (pp. 177–182), Gallipoli, Austria. (reposiTUm)

622.   Nentchev, A., Sabelka, R., Selberherr, S. (2005).
Simplification of Spacial Structures by Simulation With Periodic Boundary Conditions.
In 2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference (pp. 547–552), Fremont, Austria. (reposiTUm)

621.   Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S. (2005).
Simulation of Dynamic NBTI Degradation for a 90 Nm CMOS Technology.
In NSTI Nanotech Technical Proceedings (pp. 29–32), Anaheim, Austria. (reposiTUm)

620.   Li, L., Meller, G., Kosina, H. (2005).
Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors.
In 3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts (pp. 112–113), Winterthur, Austria. (reposiTUm)

619.   Ungersboeck, E., Kosina, H. (2005).
The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201535 (reposiTUm)

618.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors.
In 5th IEEE Conference on Nanotechnology, 2005., Nagoya, Austria. https://doi.org/10.1109/nano.2005.1500641 (reposiTUm)

617.   Span, G., Wagner, M., Grasser, T. (2005).
Thermoelectric Power Generation Using Large Area Pn-Junctions.
In The 3rd European Conference on Thermoelectrics Proceedings ECT2005 (pp. 72–75), Nancy, Austria. (reposiTUm)

616.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Stress Dependent Thermal Oxidation.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201503 (reposiTUm)

615.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress.
In 208th ECS Meeting (p. 1), Los Angeles. (reposiTUm)

614.   Al-Ani, E., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S. (2005).
Three-Dimensional State-Of-The-Art Topography Simulation.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 430–432), Porto, Austria. (reposiTUm)

613.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., Selberherr, S. (2005).
Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis.
In NSTI Nanotech Technical Proceedings (pp. 620–623), Anaheim, Austria. (reposiTUm)

612.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., Selberherr, S. (2005).
Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress.
In VLSI Circuits and Systems II (pp. 380–387), Sevilla, Spain. https://doi.org/10.1117/12.608414 (reposiTUm)

611.   Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005).
Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Montreux, Austria. (reposiTUm)

610.   Pourfath, M., Gehring, A., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration.
In NSTI Nanotech Technical Proceedings (pp. 128–131), Anaheim, Austria. (reposiTUm)

609.   Heitzinger, C., Sheikholeslami, A., Fugger, J., Häberlen, O., Leicht, M., Selberherr, S. (2004).
A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm.
In 205th ECS Meeting (pp. 132–142), San Antonio, Austria. (reposiTUm)

608.  R. Entner, A. Gehring, T. Grasser, S. Selberherr:
"A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 114 - 117. Zusätzliche Informationen

607.  T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model fo