Conference Presentations
| 2087. | Ferdowsi, A., Függer, M., Salzmann, J., Schmid, U. (2024). A Hybrid Delay Model for Interconnected Multi-Input Gates. In 2023 26th Euromicro Conference on Digital System Design (DSD) (pp. 381–390), Golem, Albania. https://doi.org/10.1109/DSD60849.2023.00060 (reposiTUm) | |
| 2086. | Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., Pobegen, G. (2024). A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. In 2024 IEEE International Reliability Physics Symposium (IRPS) (pp. 3B.1-1–3B.1-7), United States. https://doi.org/10.1109/IRPS48228.2024.10529465 (reposiTUm) | |
| 2085. | Waltl, M., Stampfer, B., Grasser, T. (2024). Advanced Extraction of Trap Parameters From Single-Defect Measurements. In 2023 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), United States. https://doi.org/10.1109/IIRW59383.2023.10477640 (reposiTUm) | |
| 2084. | Bendra, M., Pruckner, B., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2024). Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance Through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. In Proceedings 2024 Device Research Conference (DRC) (pp. 1–2), Maryland, United States. https://doi.org/10.1109/DRC61706.2024.10605512 (reposiTUm) | |
| 2083. | Stella, R., Leroch, S., Hössinger, A., Waldhör, D., Filipovic, L. (2024). Atomistic Study of 4h-SiC Using Ab Initio and Machine Learning Techniques. In PRiME 2024 October 6, 2024 - October 11, 2024 Honolulu, USA, Honolulu, HI, United States. https://doi.org/10.1149/MA2024-02201801mtgabs (reposiTUm) | |
| 2082. | Bamer, B., Leroch, S., Hossinger, A., Filipovic, L. (2024). Cluster-Based Semi-Empirical Model for Dopant Activation in Silicon Carbide. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10732978 (reposiTUm) | |
| 2081. | Bamer, B., Hoessinger, A., Filipovic, L. (2024). Cluster-Based Model for Dopant Activation in SiC. In MESS24: Microelectronic Systems Symposium (p. 47), Vienna, Austria. (reposiTUm) | |
| 2080. | Bamer, B., Leroch, S., Hoessinger, A., Filipovic, L. (2024). Cluster-Based Multivariate Spline Model for Dopant Activation in SiC. In AMaSiS 2024: Applied Mathematics and Simulation for Semiconductor Devices (p. 20), Berlin, Germany. (reposiTUm) | |
| 2079. | Filipovic, L. (2024). Efficient Multi-Scale Modeling of Semiconductor Device Fabrication. In The 5th International Congress on Advanced Materials Sciences and Engineering: Abstract Book (p. 40), Lovran, Croatia. (reposiTUm) | |
| 2078. | Gull, J., Filipovic, L., Kosina, H. (2024). Electron-Electron Scattering in Non-Parabolic Transport Models. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733120 (reposiTUm) | |
| 2077. | Filipovic, L., Reiter, T., Piso, J., Kostal, R. (2024). Equipment-Informed Machine Learning-Assisted Feature-Scale Plasma Etching Model. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733099 (reposiTUm) | |
| 2076. | Loesener, M., Zinsler, T., Stampfer, B., Wimmer, F., Ioannidis, E., Monga, U., Pflanzl, W., Minixhofer, R., Grasser, T., Waltl, M. (2024). Evaluation of the Robustness of the Defect-Centric Model for Defect Parameter Extraction From RTN Analysis. In 2024 Austrochip Workshop on Microelectronics (Austrochip), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716231 (reposiTUm) | |
| 2075. | Pruckner, B., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Field-Free Magnetization Switching in SOT-MRAM Devices With Noncollinear Antiferromagnets. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716227 (reposiTUm) | |
| 2074. | Pruckner, B., Jorstad, N., Hadamek, T., Gös, W., Selberherr, S., Sverdlov, V. (2024). Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1584–1589), Opatija, Croatia. https://doi.org/10.1109/MIPRO60963.2024.10569617 (reposiTUm) | |
| 2073. | Pruckner, B., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices With Non-Collinear Antiferromagnets. In International Conference on Magnetism: Book of Abstracts (p. 1842), Bologna, Italy. (reposiTUm) | |
| 2072. | Kaczer, B., Degraeve, R., Franco, J., Grasser, T., Roussel, P., Bury, E., Weckx, P., Chasin, A., Tyaginov, S., Vandemaele, M., Grill, A., O'Sullivan, B., Diaz-Fortuny, J., Saraza-Canflanca, P., Waltl, M., Rinaudo, P., Zhao, Y., Kao, E., Asanovski, R., Catapano, E., Beckers, A., Vici, A., Truijen, B., Higashi, Y., Clima, S., Xiang, Y., Sangani, D., Panarella, L., Smets, Q., Knobloch, T., Waldhör, D., Van Troeye, B., Guo, Y., Kruv, A., Viswakarma, K., Gonzalez, M., Linten, D. (2024). Gate Oxide Reliability: Upcoming Trends, Challenges, and Opportunities. In 2024 IEEE Silicon Nanoelectronics Workshop (SNW) (pp. 3–4), United States. https://doi.org/10.1109/SNW63608.2024.10639245 (reposiTUm) | |
| 2071. | Reiter, T., Toifl, A., Kong, S., Hoessinger, A., Filipovic, L. (2024). Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733316 (reposiTUm) | |
| 2070. | Ruch, B., Padovan, V., Pogany, D., Ostermaier, C., Butej, B., Koller, C., Waltl, M. (2024). Influence of Hole Injection on Associated Recovery Phenomena in GaN-Based GITs Subjected to Hot Electron Trapping. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716239 (reposiTUm) | |
| 2069. | Bendra, M., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2024). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. In Proceedings 2024 47th MIPRO ICT and Electronics Convention (MIPRO) (pp. 1579–1583), Opatija, Croatia. https://doi.org/10.1109/MIPRO60963.2024.10569798 (reposiTUm) | |
| 2068. | Bendra, M., Lacerda de Orio, R., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2024, May 25). Influence of Interface Exchange Coupling in Multilayered Spintronic Structures 47th MIPRO ICT and Electronics Convention (MIPRO 2024), Opatija, Croatia. (reposiTUm) | |
| 2067. | Bendra, M., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2024). Interlayer Exchange Coupling for Enhanced Performance in Spin-Transfer Torque MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 94–95), Athen, Greece. (reposiTUm) | |
| 2066. | Bendra, M., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2024). Investigating Reliability Issues in Multi-Layered STT-MRAM With Synthetic Antiferromagnets. In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapur, Singapore. https://doi.org/10.1109/IPFA61654.2024.10690971 (reposiTUm) | |
| 2065. | Leroch, S., Stella, R., Hössinger, A., Filipovic, L. (2024). MD Simulation of Epitaxial Recrystallization and Defect Structure of Al-Implanted 4h-SiC. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733052 (reposiTUm) | |
| 2064. | Jørstad, N., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2024). Magnetic Field Free SOT-MRAM Switching. In 2024 Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Kamuela, Hi, United States. (reposiTUm) | |
| 2063. | Pruckner, B., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abtract Book (pp. 154–155), Athen, Greece. (reposiTUm) | |
| 2062. | Filipovic, L. (2024). Merging Reactor and Feature Scales for Plasma Etch Modeling. In IEEE NANO 2024 Book of Abstracts (p. 120), Gijon, Spain. (reposiTUm) | |
| 2061. | Jorstad, N., Pruckner, B., Bendra, M., Goes, W., Sverdlov, V. (2024). Modeling Advanced Perpendicular MRAM Cells: Generating Spin Currents for Fast Field-Free Cell Switching. In The 5th International Congress on Advanced Materials Sciences and Engineering: Abstract Book (p. 46), Lovran, Croatia. (reposiTUm) | |
| 2060. | Gentles, A., Dehghani, M., Minixhofer, R., Khakbaz, P., Waldhor, D., Waltl, M. (2024). Modeling Next Generation Sensor Chips: Towards Predictive Band Structure Models for Quarternary III-V Semiconductor Alloys. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), United States. https://doi.org/10.1109/SISPAD62626.2024.10732909 (reposiTUm) | |
| 2059. | Hu, Z., Filipovic, L., Li, J., Wang, L., Wu, Z., Chen, R., Wei, Y., Li, L. (2024). Modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, CA, United States. https://doi.org/10.1109/SISPAD62626.2024.10733200 (reposiTUm) | |
| 2058. | Sverdlov, V., Jorstad, N., Bendra, M., Pruckner, B., Hadamek, T., Goes, W., Selberherr, S. (2024). Modeling Spin and Charge Transport in Magnetic Multilayers: From Emerging Memories to Terahertz Emitters. In Technical Program and Abstract Booklet: TeraTech 2024: The 11th International Symposium of Terahertz Related Devices and Technologies (pp. 13–14), Buffalo, NY, United States. (reposiTUm) | |
| 2057. | Filipovic, L. (2024). Modeling and Simulation of ALD in a Level Set Framework. In EFDS: Program Booklet: ALD for Industry (p. 24), Dresden, Germany. (reposiTUm) | |
| 2056. | Kosina, H., Gull, J. (2024, March 25). Modeling of Electron-Electron Scattering in Nanoelectronic Devices World Congress on Nanoscience and Nanotechnology, Barcelona, Spain. (reposiTUm) | |
| 2055. | Filipovic, L., Reiter, T. (2024). Multi-Scale Model for High Aspect Ratio TiN Etching in a Cl₂/Ar Inductively Coupled Plasma. In SICT 2024, Plasma Tech 2024 and Tribology 2024 Joint International Conferences: Book of Abstracts (p. 67), Vienna, Austria. (reposiTUm) | |
| 2054. | Filipovic, L., Bamer, B., Leroch, S., Reiter, T., Stella, R., Hoessinger, A. (2024). Multi-Scale Process TCAD for Advanced Semiconductor Fabrication. In MESS24: Microelectronic Systems Symposium (p. 37), Vienna, Austria. (reposiTUm) | |
| 2053. | Stephanie, M., Pham, L., Schindler, A., Waltl, M., Grasser, T., Schrenk, B. (2024). Neural Network With Optical Frequency-Coded ReLU. In Optical Fiber Communication Conference (OFC) 2024, United States. (reposiTUm) | |
| 2052. | Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Optimization of Spin-Orbit Torque for Field-Free Switching of Ferromagnetic Trilayers. In International Conference on Magnetism: Book of Abstract (p. 1286), Bologna, Italy. (reposiTUm) | |
| 2051. | Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2024). Optimizing Unconventional Trilayer SOTs for Field-Free Switching. In 10th International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2024: Abstract Book (pp. 84–85), Athens, Greece. (reposiTUm) | |
| 2050. | Jorstad, N., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2024). Out-Of-Plane Polarized Spin Current Generation for Field-Free Switching of Perpendicular SOT-MRAM. In Book of abstracts of the Device Research Conference (DRC-2024) (p. 143), Maryland, United States. (reposiTUm) | |
| 2049. | Prigann, S., Feil, M., Reisinger, H., Bissinger, J., Strasser, M., Waltl, M., Schlipf, J., Kaya, T., Bartholomäus, L., Gustin, W., Basler, T. (2024). Prompt Shift of On-State Resistance in LDMOS Devices: Causes, Recovery, and Reliability Implications. In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 394–397), Germany. https://doi.org/10.1109/ISPSD59661.2024.10579645 (reposiTUm) | |
| 2048. | Sokolovic, I., Rasouli, S., Wu, B., Sofer, Z., Matković, A., Schmid, M., Diebold, U., Grasser, T. (2024, March 19). PtSe₂ vdW Single-Crystal Surfaces Studied at the Atomic Scale With ncAFM 87. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Germany. (reposiTUm) | |
| 2047. | Lamprecht, D., Capin, M., Benzer, A., Längle, M., Mangler, C., Kotakoski, J., Filipovic, L. (2024). Room Temperature Gas Sensing Based on Substitutional Atom Doped MoS₂. In XXXVIth International Winterschool on Electronic Properties of Novel Materials: Molecular Nanostructures: Program (p. 31), Kirchberg, Austria. (reposiTUm) | |
| 2046. | Etl, C., Ballicchia, M., Nedjalkov, M., Weinbub, J. (2024). Signed-Particle Monte Carlo Algorithm for Wigner Transport in Linear Electromagnetic Fields. In Conference Program and Book of Abstracts: The 15th International Conference Scientific Computing in Electrical Engineering (SCEE) (pp. 66–67), Darmstadt, Germany. (reposiTUm) | |
| 2045. | Pruckner, B., Jorstad, N., Bendra, M., Hadamek, T., Goes, W., Selberherr, S., Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for Sub-Ns Switching. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 1–4), San Jose, California, United States. https://doi.org/10.1109/SISPAD62626.2024.10733317 (reposiTUm) | |
| 2044. | Pruckner, B., Jørstad, N., Bendra, M., Hadamek, T., Wolfgang Goes, Selberherr, S., Sverdlov, V. (2024). Simulation of Advanced MRAM Devices for Sub-Ns Switching. In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Jose, United States. https://doi.org/10.1109/SISPAD62626.2024.10733317 (reposiTUm) | |
| 2043. | Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2024). Simulation of SAF-Enhanced Multilayered STT-MRAM Structures. In 2024 Austrochip Workshop on Microelectronics (Austrochip) (pp. 1–4), Vienna, Austria. https://doi.org/10.1109/Austrochip62761.2024.10716241 (reposiTUm) | |
| 2042. | Saleh, A., Croes, K., Ceric, H., De Wolf, I., Zahedmanesh, H. (2024). Technology Benchmarking of Copper Electromigration Using a Grain-Sensitive Simulation Framework. In 2024 IEEE International Interconnect Technology Conference (IITC), San Jose, United States. https://doi.org/10.1109/IITC61274.2024.10732543 (reposiTUm) | |
| 2041. | Sokolovic, I., Guedes, E., van Waas, T., Poncé, S., Polley, C., Schmid, M., Diebold, U., Radović, M., Setvin, M., Dil, H. (2024, March 22). Two-Dimensional Electron Liquids at Truly Bulk-Terminated SrTiO₃ 87. Jahrestagung der DPG und DPG-Frühjahrstagung, Berlin, Germany. (reposiTUm) | |
| 2040. | Etl, C., Ballicchia, M., Nedjalkov, M., Kosina, H., Weinbub, J. (2024). Wigner Transport in Linear Magnetic Fields: The Quantum Magnetic Term Effect. In 2024 IEEE 24th International Conference on Nanotechnology (NANO) (pp. 74–79), Gijón, Spain. https://doi.org/10.1109/NANO61778.2024.10628731 (reposiTUm) | |
| 2039. | Grill, A., Michl, J., Díaz-Fortuny, J., Beckers, A., Bury, E., Chasin, A., Grasser, T., Waltl, M., Kaczer, B., De Greve, K. (2023). A Comprehensive Cryogenic CMOS Variability and Reliability Assessment Using Transistor Arrays. In 2023 7th IEEE Electron Devices Technology, Manufacturing Conference (EDTM) (pp. 1–3), Korea, Republic of. https://doi.org/10.1109/EDTM55494.2023.10102937 (reposiTUm) | |
| 2038. | Aguinsky, L., Toifl, A., Souza Berti Rodrigues, F., Hössinger, A., Weinbub, J. (2023). A Modern Formulation of Knudsen Diffusion With Applications to Nanofabrication. In 2023 IEEE 23rd International Conference on Nanotechnology (NANO) (pp. 270–275), Jeju, Korea, Republic of. https://doi.org/10.1109/NANO58406.2023.10231251 (reposiTUm) | |
| 2037. | Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2), Tarragona, Spain. (reposiTUm) | |
| 2036. | Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂. In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm) | |
| 2035. | Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (p. 1), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331859mtgabs (reposiTUm) | |
| 2034. | Stephanie, M., Pham, L., Schindler, A., Waltl, M., Grasser, T., Schrenk, B. (2023). All-Optical ReLU as a Photonic Neural Activation Function. In 2023 IEEE Photonics Society Summer Topicals Meeting Series (SUM) (pp. 1–2), Italy. https://doi.org/10.1109/SUM57928.2023.10224396 (reposiTUm) | |
| 2033. | Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023). Back-Hopping in Ultra-Scaled MRAM Cells. In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm) | |
| 2032. | Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jørstad, N. P., Pruckner, B., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2023, May 25). Back-Hopping in Ultra-Scaled MRAM Cells 46th MIPRO ICT and Electronics Convention (MIPRO), Opatija, Croatia. (reposiTUm) | |
| 2031. | Sverdlov, V., Selberherr, S. (2023). Charge and Spin Transport in Semiconductor Devices. In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4), Nanjing, China. https://doi.org/10.1109/ASICON58565.2023.10396645 (reposiTUm) | |
| 2030. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29). Charged Instrinsic Defect States in Amorphous Si3N4 European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
| 2029. | Ballicchia, M., Nedjalkov, M., Weinbub, J. (2023). Coherent Wigner Dynamics of a Superposition State in a Tunable Barrier Quantum Dot. In Book of Abstracts of the International Workshop on Computational Nanotechnology 2023 (IWCN) (pp. 90–91), Barcelona, Spain. (reposiTUm) | |
| 2028. | Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S. (2023). Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Lisbon, Portugal. https://doi.org/10.1109/ESSDERC59256.2023.10268508 (reposiTUm) | |
| 2027. | Ballicchia, M., Etl, C., Nedjalkov, M., Weinbub, J. (2023). Controlling Single Electrons by Non-Uniform Magnetic Fields. In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 87–88), Kona, Hawaii, United States. (reposiTUm) | |
| 2026. | Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2023). Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (p. 116), Mauterndorf, Austria. (reposiTUm) | |
| 2025. | Kosina, H., Gull, J. (2023). Effect of Electron-Electron Scattering on the Energy Distribution in Semiconductor Devices. In Book of abstracts of the International Workshop on Computational Nanotechnology (IWCN) (pp. 62–63), Barcelona, Spain. (reposiTUm) | |
| 2024. | Filipovic, L., Lacerda de Orio, R. (2023). Electromigration Reliability of Buried Power Rails in Vertically Stacked Devices. In 2023 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW59383.2023.10477689 (reposiTUm) | |
| 2023. | Kosik, R., Cervenka, J., Waldhör, D., Ribeiro, F., Kosina, H. (2023). Exploring the Global Solution Space of a Simple Schrödinger-Poisson Problem. In Large-Scale Scientific Computations (pp. 472–480), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-031-56208-2_49 (reposiTUm) | |
| 2022. | Reiter, T., Filipovic, L. (2023). Fast 3D Flux Calculation Using Monte Carlo Ray Tracing on GPUs. In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT '2023)) (pp. 67–72), Funchal, Portugal. https://doi.org/10.13140/RG.2.2.13265.71524 (reposiTUm) | |
| 2021. | Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Gös, W., Sverdlov, V. (2023, January 21). Finite Element Method for MRAM Switching Simulations [Keynote Presentation]. International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), Athens, Greece. (reposiTUm) | |
| 2020. | Knobloch, T., Grasser, T. (2023). Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials. In ECS Meeting Abstracts (p. 1319), Boston, MA, United States. https://doi.org/10.1149/MA2023-01131319mtgabs (reposiTUm) | |
| 2019. | Ballicchia, M., Nedjalkov, M., Weinbub, J. (2023). Gauge-Invariant Wigner Particle Model for Linear Electromagnetic Fields. In Book of Abstracts: IWW International Wigner Workshop 2023 (pp. 3–5), Barcelona, Spain. (reposiTUm) | |
| 2018. | Knobloch, T., Selberherr, S., Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. In ECS Meeting Abstracts (p. 1864), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331864mtgabs (reposiTUm) | |
| 2017. | Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). Impact of Spin-Flip Length in dsMTJ Spacer Layers on Switching Performance. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023), Vienna, Austria. (reposiTUm) | |
| 2016. | Saleh, A., Zahedmanesh, H., Ceric, H., De Wolf, I., Croes, K. (2023). Impact of via Geometry and Line Extension on Via-Electromigration in Nano-Interconnects. In 2023 IEEE International Reliability Physics Symposium (IRPS) Proceedings, Monterey, United States. https://doi.org/10.1109/IRPS48203.2023.10118027 (reposiTUm) | |
| 2015. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
| 2014. | Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H). In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm) | |
| 2013. | Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). Micromagnetic Modeling of SOT-MRAM Dynamics. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 2012. | Sverdlov, V., Jorstad, N., Bendra, M., Hadamek, T., Goes, W. (2023). Modeling Emerging Spintronic Devices and Spintronic THz Emitters. In Book of abstracts of the International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023) (pp. 50–51), Aizu-Wakamatsu, Japan. (reposiTUm) | |
| 2011. | Reiter, T., Toifl, A., Hössinger, A., Filipovic, L. (2023). Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 85–88), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319506 (reposiTUm) | |
| 2010. | Bogner, C., Schlunder, C., Waltl, M., Reisinger, H., Grasser, T. (2023). Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. In 2023 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–7), Monterey, United States. https://doi.org/10.1109/IRPS48203.2023.10117818 (reposiTUm) | |
| 2009. | Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., Selberherr, S. (2023). Modeling of Ultra-Scaled Magnetoresistive Random Access Memory. In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023) (pp. 28–30), Funchal (Madeira Island), Portugal. (reposiTUm) | |
| 2008. | Leroch, S., Stella, R., Hössinger, A., Filipovic, L. (2023). Molecular Dynamics Study of Al Implantation in 4h-SiC. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 185–188), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319554 (reposiTUm) | |
| 2007. | Gull, J., Kosina, H. (2023). Monte-Carlo Investigation of Energy Distributions in FET Channels. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) : Programme, Tarragona, Spain. (reposiTUm) | |
| 2006. | Sverdlov, V., Bendra, M., Jorstad, N., Pruckner, B., Hadamek, T., Goes, W., Selberherr, S. (2023). Multi-Bit Operation in an MRAM Cell With a Composite Free Layer. In 2023 Workshop on Innovative Nanoscale Devices and Systems: Book of Abstracts (pp. 143–144), Kona, Hawaii, United States. (reposiTUm) | |
| 2005. | Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., Selberherr, S. (2023). Multi-Level Operation in Ultra-Scaled MRAM. In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings, Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 (reposiTUm) | |
| 2004. | Jorstad, N., Hadamek, T., Bendra, M., Ender, J., Pruckner, B., Goes, W., Sverdlov, V. (2023). Numerical Simulations of Spintronic Magnetoresistive Memories. In SURGE Virtual Event North America 2023: Agenda (p. 1), Santa Clara, CA, United States. (reposiTUm) | |
| 2003. | Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Numerical Study of Two-Terminal SOT-MRAM. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 2002. | Cervenka, J., Kosik, R., Senra Ribeiro, F. (2023). Parallel Solution of the Schrödinger-Poisson Equation on GPUs. In 14th International Conference on Large-Scale Scientific Computations (LSSC '23): Scientific Program: Abstracts: List of Participants (pp. 34–35), Sozopol, Bulgaria. (reposiTUm) | |
| 2001. | Cervenka, J., Kosik, R., Ribeiro, F. (2023). Parallel Solution of the Schrödinger-Poisson Equation on GPUs. In Large-Scale Scientific Computations (pp. 375–382), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-031-56208-2_38 (reposiTUm) | |
| 2000. | Filipovic, L., Bobinac, J., Piso, J., Reiter, T. (2023). Physics-Informed Compact Model for SF6/O2 Plasma Etching. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 73–76), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319479 (reposiTUm) | |
| 1999. | Filipovic, L., Reiter, T., Klemenschits, X., Leroch, S., Stella, R., Baumgartner, O., Hössinger, A. (2023). Process Simulation in Micro- And Nano-Electronics. In Book of abstracts of the International Workshop on Computational Nanotechnology 2023 (pp. 38–39), Barcelona, Spain. (reposiTUm) | |
| 1998. | Provias, A., Knobloch, T., Kitamura, A., O'Brien, K., Dorow, C., Waldhör, D., Stampfer, B., Penumatcha, A., Lee, S., Ramamurthy, R., Clendenning, S., Waltl, M., Avci, U., Grasser, T. (2023). Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors Through Hysteresis and Bias Temperature Instability Analyses. In 2023 International Electron Devices Meeting (IEDM) (pp. 1–4), San Francisco, United States. https://doi.org/10.1109/IEDM45741.2023.10413755 (reposiTUm) | |
| 1997. | Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm) | |
| 1996. | Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices. In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319650 (reposiTUm) | |
| 1995. | Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N., Hadamek, T., Ender, J., Lacerda de Orio, R., Gös, W. (2023). Spin and Charge Transport in Ultra-Scaled MRAM Cells. In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (p. 55), Moscow-Zvenigorod, Russian Federation. https://doi.org/10.29003/m3563.ICMNE-2023 (reposiTUm) | |
| 1994. | Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Study of Self-Heating and Its Effects in SOT-STT-MRAM. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319549 (reposiTUm) | |
| 1993. | Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023). Switching Composite Free Layers in Ultra-Scaled MRAM Cells. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm) | |
| 1992. | Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023). Switching Performance of Mo-Based pMTJ and dsMTJ Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm) | |
| 1991. | Achleitner, F., Arnold, A., Carlen, E., Jüngel, A., Mehrmann, V. (2023, September 18). The Hypocoercivity Index for the Short Time Behavior of Linear Time-Invariant ODE Systems ÖMG Tagung 2023 Meeting of the Austrian Mathematical Society, Karl-Franzens-University (KFU), Graz, Austria. (reposiTUm) | |
| 1990. | Ender, J., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023). Towards Efficient SOT-assisted STT-MRAM Cell Switching Using Reinforcement Learning. In 14th International Conference, Large-Scale Scientific Computations LSSC'23 : Scientific Program, Abstracts, List of Participants (p. 39), Sozopol, Bulgaria. (reposiTUm) | |
| 1989. | Bendra, M., Jorstad, N., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023). Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics. In IEDM 2023 Special MRAM poster session, San Francisco, United States. (reposiTUm) | |
| 1988. | Weinbub, J., Ballicchia, M., Etl, C., Nedjalkov, M. (2023, March 6). Wigner Signed Particles for Electron Quantum Optics Mini Workshop “QuantMOCOTE - Modelling, Optimization and Control of Quantum systems in Technology and Education,” Würzburg, Germany. (reposiTUm) | |
| 1987. | Ballicchia, M., Etl, C., Nedjalkov, M., Weinbub, J. (2023). Wigner Transport in Magnetic Fields. In Book of abstracts of the International Workshop on Computational Nanotechnology 2023 (pp. 119–120), Barcelona, Spain. (reposiTUm) | |
| 1986. | Rodrigues, F., Aguinsky, L.F., Hössinger, A., Weinbub, J.: "3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 32 - 33. | |
| 1985. | Cvitkovich, L., Waldhör, D., El-Sayed, A.-M., Jech, M., Wilhelmer, C., Grasser, T.: "Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation"; Poster: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 209. | |
| 1984. | Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A.-M., Cvitkovich, L., Waltl, M., Grasser, T.: "Ab-Initio Study of Multi-State Defects in Amorphous SiO2"; Vortrag: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 264. | |
| 1983. | Selberherr, S., Sverdlov, V.: "About Electron Transport and Spin Control in Semiconductor Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain (eingeladen); 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 1 - 4. | |
| 1982. | Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., Sverdlov, V.: "About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy"; Vortrag: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 04.06.2022 - 06.06.2022; in: "2022 IEEE Latin American Electron Devices Conference (LAEDC)", 978-1-6654-9768-8, (2022), ISBN: 978-1-6654-9768-8; S. 1 - 4. https://doi.org/10.1109/LAEDC54796.2022.9908222 | |
| 1981. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Devices for Digital Spintronics. In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm) | |
| 1980. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Magneto-Resistive Memory. In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm) | |
| 1979. | Lenz, C., Manstetten, P., Hössinger, A., Weinbub, J.: "Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12. | |
| 1978. | Milardovich, D., Waldhör, D., Jech, M., El-Sayed, A.-M., Grasser, T.: "Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 61 - 62. | |
| 1977. | Illarionov, Yu., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N. S., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T.: "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators"; Vortrag: Device Research Conference (DRC), Columbus, OH; 26.06.2022 - 29.06.2022; in: "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8; S. 121 - 122. | |
| 1976. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: "Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12. | |
| 1975. | Filipovic, L., Baumgartner, O., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M.: "DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 34 - 35. | |
| 1974. | Fiorentini, S., Loch, W.J., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S.: "Design Analysis of Ultra-Scaled MRAM Cells"; Vortrag: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China (eingeladen); 25.10.2022 - 28.10.2022; in: "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0. | |
| 1973. | Saleh, A., Zahedmanesh, H., Ceric, H., Croes, K., De Wolf, I.: "Dynamics of Electromigration Voids in Cu Interconnects: Investigation Using a Physics-Based Model Augmented by Neural Networks"; Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 27.06.2022 - 30.06.2022; in: "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), ISBN: 978-1-6654-8646-0; S. 22 - 27. https://doi.org/10.1109/IITC52079.2022.9881303 | |
| 1972. | Sverdlov, V., Seiler, H., El-Sayed, A.-M., Illarionov, Yu., Kosina, H., Selberherr, S.: "Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T"; Vortrag: International Conference on Physics and its Application, San Francisco, USA (eingeladen); 18.07.2022 - 21.07.2022; in: "International Conference on Physics and its Application 2022", (2022), S. 36 - 37. | |
| 1971. | Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2022). Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 48–49), Lihue, HI, United States. (reposiTUm) | |
| 1970. | Bogner, C., Grasser, T., Waltl, M., Reisinger, H., Schlunder, C. (2022). Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–8), Dallas, United States. https://doi.org/10.1109/IRPS48227.2022.9764496 (reposiTUm) | |
| 1969. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: "Electromagnetic Control of Electron Interference"; Poster: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich; 06.07.2022 - 08.07.2022; in: "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), S. 15. | |
| 1968. | Ceric, H., Orio, R., Selberherr, S.: "Electromigration Degradation of Gold Interconnects: A Statistical Study"; Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, California,; 27.06.2022 - 30.06.2022; in: "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), S. 102 - 104. https://doi.org/10.1109/IITC52079.2022.9881313 | |
| 1967. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Goes, W., Selberherr, S.: "Emerging Devices for Digital Spintronics"; Hauptvortrag: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online (eingeladen); 25.05.2022 - 26.05.2022; in: "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), S. 32 - 33. | |
| 1966. | Knobloch, T., Illarionov, Yu., Grasser, T.: "Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning"; Vortrag: Graphene Week 2022, Munich, Germany (eingeladen); 05.09.2022 - 09.09.2022; in: "Abstracts of Graphene Week 2022", (2022). | |
| 1965. | Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022, September 0). Epitaxial Growth of Crystalline CaF2 on Silicene by Molecular Beam Epitaxy European Material Research Society (E-MRS) Fall Meeting 2022, Warsaw, Poland. (reposiTUm) | |
| 1964. | Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022, September 12). Epitaxial Growth of Crystalline CaF2 on Silicene by Molecular Beam Epitaxy 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19), Mondsee, Austria. (reposiTUm) | |
| 1963. | Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022). Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm) | |
| 1962. | Knobloch, T., Illarionov, Yu., Grasser, T.: "Finding Suitable Gate Insulators for Reliable 2D FETs"; Vortrag: International Reliability Physics Symposium (IRPS), Dallas, USA (eingeladen); 27.03.2022 - 31.03.2022; in: "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9; S. 2A.1-1 - 2A.1-10. https://doi.org/10.1109/IRPS48227.2022.9764499 | |
| 1961. | Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm) | |
| 1960. | Ceric, H., Orio, R., Selberherr, S.: "Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics"; Vortrag: IEEE European Solid-State Device Research Conference (ESSDERC), Milan, Italy; 20.09.2022 - 22.09.2022; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; S. 301 - 303. | |
| 1959. | Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L.: "Impact of Mask Tapering on SF6/O2 Plasma Etching"; Vortrag: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in: "Microelectronic Devices and Technologies: Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT '2022)", (2022), ISBN: 978-84-09-43856-3; S. 90 - 94. | |
| 1958. | Tselios, K., Knobloch, T., Michl, J., Waldhör, D., Schleich, C., Ioannidis , E., Enichlmair , H., Minixhofer , R., Grasser, T., Waltl, M. (2022). Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors. In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), Fallen Leaf Lake, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032748 (reposiTUm) | |
| 1957. | Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Goes, W., Selberherr, S.: "Interface Effects in Ultra-Scaled MRAM Cells"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 18.05.2022 - 20.05.2022; in: "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)", (2022). | |
| 1956. | Milardovich, D., Jech, M., Waldhör, D., El-Sayed, A.-M., Grasser, T.: "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide"; Vortrag: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 22.08.2022 - 25.08.2022; in: "PSI-K 2022: abstracts book", (2022), S. 138. | |
| 1955. | Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022). Metastability of Negatively Charged Hydroxyl-E' Centers and Their Potential Role in Positive Bias Temperature Instabilities. In ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (pp. 376–379), Italy. https://doi.org/10.1109/ESSDERC55479.2022.9947111 (reposiTUm) | |
| 1954. | Ceric, H., Orio, R., Selberherr, S.: "Microstructural Impact on Electromigration Reliability of Gold Interconnects"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 178 - 179. | |
| 1953. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Selberherr, S.: "Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches"; Hauptvortrag: 2 nd Global Webinar on Nanoscience & Nanotechnology, online (eingeladen); 14.03.2022 - 15.03.2022; in: "2nd Global Webinar on Nanoscience & Nanotechnology", (2022). | |
| 1952. | Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Goes, W., Selberherr, S.: "Modeling Advanced Spintronic Based Magnetoresistive Memory"; Vortrag: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia (eingeladen); 27.09.2022 - 29.09.2022; in: "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022). | |
| 1951. | Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W., Jorstad, N., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Modeling Advanced Spintronic Based Magnetoresistive Memory. In International Conference on Microwave, THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm) | |
| 1950. | Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S.: "Modeling Approach to Ultra-Scaled MRAM Cells"; Vortrag: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen (eingeladen); 23.06.2022 - 25.06.2022; in: "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), S. 7 - 8. | |
| 1949. | Jørstad, N., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: "Modeling Interfacial and Bulk Spin-Orbit torques"; Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022). | |
| 1948. | Aguinsky, L.F., Rodrigues, F., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J.: "Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 40 - 41. | |
| 1947. | Reiter, T., Klemenschits, X., Filipovic, L. (2022). Modeling Plasma-Induced Damage During the Dry Etching of Silicon. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032764 (reposiTUm) | |
| 1946. | Hadámek, T., Goes, W., Selberherr, S., Sverdlov, V.: "Modeling Thermal Effects in STT-MRAM"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 06.09.2022 - 08.09.2022; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), S. 11 - 12. | |
| 1945. | Sverdlov, V.: "Modeling Ultra-Scaled Magnetoresistive Memory Cells"; Hauptvortrag: 3rd Global Webinar on Nanoscience & Nanotechnology, online (eingeladen); 18.07.2022; in: "3rd Global Webinar on Nanoscience & Nanotechnology", (2022). | |
| 1944. | Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022). Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach. In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm) | |
| 1943. | Kosina, H. (2022, October 13). Numerische Modellierung Der Beweglichkeit in Verspanntem Silizium CiS MEMS Workshop, Erfurt, Germany. (reposiTUm) | |
| 1942. | Kosina, H. (2022). Particle Models for Electron-Electron Scattering. In Book of Abstracts Quantum Transport Methods and Algorithms: From Particles to Waves Approaches (p. 10), Zurich, Switzerland. (reposiTUm) | |
| 1941. | Stephanie, M., Honz, F., Vokic, N., Boxleitner, W., Waltl, M., Grasser, T., Schrenk, B. (2022). Reception of Frequency-Coded Synapses Through Fabry-Perot SOA- REAM Integrating Weighting and Detection Functions. In 2022 European Conference on Optical Communication (ECOC) (pp. 1–4), Basel, Switzerland. (reposiTUm) | |
| 1940. | Filipovic, L. (2022). Reliability of Platinum Microheater Geometries for MEMS-Based Gas Sensors. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), South Lake Tahoe, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032744 (reposiTUm) | |
| 1939. | Quell, M., Hössinger, A., Weinbub, J.: "Shared-Memory Fast Marching Method for Re-Distancing on Hierarchical Meshes"; Vortrag: Austrian-Slovenian HPC Meeting (ASHPC), Grundlsee; 31.05.2022 - 02.06.2022; in: "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2022), ISBN: 978-3-200-08499-5; 1 S. https://doi.org/10.25365/phaidra.337 | |
| 1938. | Stampfer, P., Meinhardt, G., Grasser, T., Waltl, M. (2022). Simulating and Modeling the Influence of Deep Trench Interface Recombination on Si Photodiodes. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), Fallen Leaf Lake, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032736 (reposiTUm) | |
| 1937. | Loch, W.J., Selberherr, S., Sverdlov, V.: "Simulation of Novel MRAM Devices with Enhanced Performance"; Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022). | |
| 1936. | Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V.: "Spin Torques in ULTRA-Scaled MRAM Devices"; Vortrag: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 20.09.2022 - 22.09.2022; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; S. 348 - 351. | |
| 1935. | Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V.: "Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach"; Vortrag: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 12.07.2022 - 15.07.2022; in: "The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II", 20 (2022), 4; S. 40 - 44. | |
| 1934. | Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W.J., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V.: "Spin Transfer Torques in Ultra-Scaled MRAM Cells"; Vortrag: MIPRO 2022, Opatija, Croatia; 23.05.2022 - 27.05.2022; in: "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5; S. 129 - 132. | |
| 1933. | Ceric, H., Lacerda de Orio, R., Selberherr, S. (2022). Statistical Study of Electromigration in Gold Interconnects. In 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 1–5), Singapore, Singapore. https://doi.org/10.1109/IPFA55383.2022.9915762 (reposiTUm) | |
| 1932. | Gollner, L., Steiner, R., Filipovic, L.: "Study of Phonon-limited Electron Transport in Monolayer MoS2"; Vortrag: Fourth International Conference on Microelectronic Devices and Technologies (MicDAT '2022), Corfu, Greece; 21.09.2022 - 23.09.2022; in: "Microelectronic Devices and Technologies Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT 2022)", (2022), ISBN: 978-84-09-43856-3; S. 74 - 78. | |
| 1931. | Grill, A., John, V., Michl, J., Beckers, A., Bury, E., Tyaginov, S., Parvais, B., Chasin, A., Grasser, T., Waltl, M., Kaczer, B., Govoreanu, B. (2022). Temperature Dependent Mismatch and Variability in a Cryo-Cmos Array With 30k Transistors. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. 1–6), Dallas, United States. https://doi.org/10.1109/IRPS48227.2022.9764594 (reposiTUm) | |
| 1930. | Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W.J., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V.: "Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach"; Vortrag: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 06.06.2022 - 10.06.2022; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022). | |
| 1929. | Jech, M., Grasser, T., Waltl, M.: "The Importance of Secondary Generated Carriers in Modeling of Full Bias Space"; Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), online; 06.03.2022 - 09.03.2022; in: "2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)", EDTM, (2022), S. 265 - 267. https://doi.org/10.1109/EDTM53872.2022.9798262 | |
| 1928. | Giparakis, M., Knötig, H. M., Detz, H., Beiser, M., Schrenk, W., Schwarz, B., Strasser, G., Andrews, A. M. (2022, May 19). Top-Side Illuminated InAs/AlAsSb Quantum Cascade Detector at 2.7 µm CLEO: Science and Innovations 2022, San Jose, United States of America (the). (reposiTUm) | |
| 1927. | Filipovic, L. (2022, September 5). ViennaEMC: A Broadly-Applicable Ensemble Monte Carlo Framework Workshop WS1 - Monte Carlo Simulation: Beyond Moore’s LAW 2022, Granada, Spain. (reposiTUm) | |
| 1926. | Stephanie, M., Waltl, M., Grasser, T., SchrenkSchrenk, B.: "WDM-Conscious Synaptic Receptor Assisted by SOA+EAM"; Vortrag: 2022 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, California, USA; 05.03.2022 - 09.03.2022; in: "2022 Optical Fiber Communications Conference and Exhibition (OFC)", (2022). | |
| 1925. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: "Wigner Dynamics of Electron Quantum Superposition States in a Confined and Opened Quantum Dot"; Vortrag: 22nd IEEE International Conference on Nanotechnology, Palma de Mallorca, Sapin; 04.07.2022 - 08.07.2022; in: "2022 IEEE 22nd International Conference on Nanotechnology (NANO)", (2022), S. 565 - 568. https://doi.org/10.1109/NANO54668.2022.9928753 | |
| 1924. | Weinbub, J.: "Wigner Signed-Particles: Computational Challenges and Simulation Opportunities"; Vortrag: CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches, Zurich (eingeladen); 06.07.2022 - 08.07.2022; in: "Book of Abstracts of the CECAM Flagship Workshop on Quantum Transport Methods and Algorithms: From Particles to Waves Approaches", (2022), 1 S. | |
| 1923. | El-Sayed, A.-M., Seiler, H., Kosina, H., Selberherr, S., Sverdlov, V.: "Ab-initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons"; Vortrag: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Hawaii, USA; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 79 - 80. | |
| 1922. | Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V.: "Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches"; Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia (eingeladen); 04.10.2021 - 08.10.2021; in: "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8. | |
| 1921. | Ender, J., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: "Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual) (eingeladen); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 45 - 46. | |
| 1920. | Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V.: "Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 49 - 50. | |
| 1919. | Franco, J., Marneffe, J., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A.-M., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B.: "Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 12.12.2021 - 18.12.2021; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), ISBN: 978-1-7281-8888-1; S. 31.2.1 - 31.2.4. https://doi.org/10.1109/IEDM13553.2020.9372054 | |
| 1918. | Sverdlov, V., El-Sayed, A.-M., Kosina, H., Selberherr, S.: "Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 17.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021). | |
| 1917. | Grasser, T., O´Sullivan, B., Kaczer, B., Franco, J., Stampfer, B., Waltl, M.: "CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), virtual; 21.03.2021 - 24.03.2021; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2021), ISBN: 978-1-7281-6893-7; S. 1 - 6. https://doi.org/10.1109/IRPS46558.2021.9405184 | |
| 1916. | Klemenschits, X., Selberherr, S., Filipovic, L.: "Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 23 - 27. https://doi.org/10.1109/SISPAD54002.2021.9592605 | |
| 1915. | Sverdlov, V., Seiler, H., El-Sayed, A.-M., Kosina, H.: "Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 52 - 53. | |
| 1914. | Lenz, C., Toifl, A., Hössinger, A., Weinbub, J.: "Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 109 - 110. | |
| 1913. | Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: "Design Support for Ultra-Scaled MRAM Cells"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 13.12.2021 - 15.12.2021; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 S. | |
| 1912. | Naz, S., Shah, A., Ahmed, S., Patrick, G., Waltl, M.: "Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata"; Poster: IEEE European Test Symposium (ETS), Bruges, Belgium (Virtual); 24.05.2021 - 28.05.2021; in: "Proceedings of the IEEE European Test Symposium (ETS)", (2021). https://doi.org/10.1109/ETS50041.2021.9465459 | |
| 1911. | Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: "Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration"; Vortrag: Trends in Magnetism (TMAG), Cefalù, Italy; 06.09.2021 - 10.09.2021; in: "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021). | |
| 1910. | Jørstad, N., Fiorentini, S., Goes, W., Sverdlov, V.: "Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM"; Vortrag: International MOS-AK Workshop, Silicon Valley, USA; 17.12.2021; in: "Proceedings of the 14th International MOS-AK Workshop", (2021), S. 1. | |
| 1909. | Weinbub, J., Ballicchia, M., Nedjalkov, M., Selberherr, S.: "Electromagnetic Coherent Electron Control"; Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), virtual (eingeladen); 19.04.2021 - 21.04.2021; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2021), ISBN: 978-1-6654-1510-1; S. 1 - 4. https://doi.org/10.1109/LAEDC51812.2021.9437949 | |
| 1908. | Weinbub, J., Ballicchia, M., Nedjalkov, M.: "Electron Quantum Optics for Quantum Interference Logic Devices"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Hawaii, USA; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 58 - 59. | |
| 1907. | Ender, J., Orio, R., Sverdlov, V.: "Enhancing SOT-MRAM Switching Using Machine Learning"; Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 14.10.2021; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), S. 1. | |
| 1906. | Lenz, C., Scharinger, A., Quell, M., Manstetten, P., Hössinger, A., Weinbub, J.: "Evaluating Parallel Feature Detection Methods for Implicit Surfaces"; Vortrag: Austrian-Slovenian HPC Meeting (ASHPC), Maribor, Slovenia (Virtual); 31.05.2021 - 02.06.2021; in: "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2021), S. 31. | |
| 1905. | Michl, J., Grill, A., Waldhör, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M.: "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 11.12.2021 - 15.12.2021; in: "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), S. 31.3.1 - 31.3.3. https://doi.org/10.1109/IEDM19574.2021.9720501 | |
| 1904. | Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm) | |
| 1903. | Filipovic, L., Klemenschits, X.: "Fast Model for Deposition in Trenches using Geometric Advection"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 224 - 228. https://doi.org/10.1109/SISPAD54002.2021.9592595 | |
| 1902. | Rodrigues, F., Aguinsky, L.F., Toifl, A., Hössinger, A., Weinbub, J.: "Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 101 - 102. | |
| 1901. | Aguinsky, L.F., Wachter, G., Scharinger, A., Rodrigues, F., Toifl, A., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J.: "Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 54 - 55. | |
| 1900. | Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V.: "Finite Element Method Approach to MRAM Modeling"; Vortrag: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 27.09.2021 - 01.10.2021; in: "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1; S. 70 - 73. https://doi.org/10.23919/MIPRO52101.2021.9597194 | |
| 1899. | El-Sayed, A.-M., Seiler, H., Kosina, H., Sverdlov, V.: "First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 113 - 114. | |
| 1898. | Filipovic, L., Selberherr, S.: "Gas Sensing with Two-Dimensional Materials Beyond Graphene"; Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 12.09.2021 - 14.09.2021; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2021), ISBN: 978-1-6654-4526-9; S. 29 - 36. https://doi.org/10.1109/MIEL52794.2021.9569088 | |
| 1897. | Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V.: "Heating Asymmetry in Magnetoresistive Random Access Memories"; Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 18.07.2021 - 21.07.2021; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2021), ISBN: 978-1-950492-55-8; S. 63 - 66. | |
| 1896. | Waltl, M.: "Impact of Defects in Semiconductor Transistors on Devices and Circuits"; Vortrag: International Meet on Nanotechnology (NANOMEET), Porto, Portugal (eingeladen); 13.09.2021 - 15.09.2021; in: "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), S. 93. | |
| 1895. | Reiter, T., Klemenschits, X., Filipovic, L.: "Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 34 - 35. | |
| 1894. | Kampl, M., Kosina, H., Waltl, M.: "Improved Sampling Algorithms for Monte Carlo Device Simulation"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 53 - 54. | |
| 1893. | Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V.: "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 04.10.2021 - 07.10.2021; in: "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714; S. 1 - 4. https://doi.org/10.1016/j.microrel.2021.114231 | |
| 1892. | Franco, J., Marneffe, J., Vandooren, A., Arimura, H., Ragnarsson, L., Claes, D., Litta, E. D., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B.: "Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic"; Vortrag: International Symposium on VLSI Technology, Kyoto, Japan; 13.06.2021 - 19.06.2021; in: "2021 Symposium on VLSI Technology (VLSIT)", (2021), ISBN: 978-1-6654-1945-1; S. 1 - 2. | |
| 1891. | Milardovich, D., Jech, M., Waldhör, D., El-Sayed, A.-M., Grasser, T.: "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 239 - 242. https://doi.org/10.1109/ESSDERC53440.2021.9631837 | |
| 1890. | Ballicchia, M., Benam, M., Nedjalkov, M., Selberherr, S., Weinbub, J.: "Modeling Coulomb Interaction with a 'Wigner-Poisson' Coupling Scheme"; Vortrag: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2021), ISBN: 978-3-9504738-2-7; S. 64 - 65. | |
| 1889. | Filipovic, L.: "Modeling and Simulation of ALD in a Level Set Framework"; Vortrag: EFDS Workshop on Simulation for ALD, virtual (eingeladen); 25.03.2021; in: "Proceedings of the EFDS Workshop on Simulation for ALD", (2021), S. 9. | |
| 1888. | Weinbub, J.: "Modeling and Simulation of Two-Dimensional Single-Electron Control"; Vortrag: International Meet on Nanotechnology (NANOMEET), Porto, Portugal (eingeladen); 13.09.2021 - 15.09.2021; in: "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021). | |
| 1887. | Weinbub, J.: "Modeling and Simulation of Two-Dimensional Single-Electron Dynamics"; Vortrag: Global Summit on Condensed Matter Physics (CONMAT), Valencia, Spain (virtual) (eingeladen); 18.10.2021 - 20.10.2021; in: "Proceedings of the Global Summit on Condensed Matter Physics (CONMAT)", (2021). | |
| 1886. | Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A.-M., Wilhelmer, C., Grasser, T.: "Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 235 - 238. https://doi.org/10.1109/ESSDERC53440.2021.9631790 | |
| 1885. | Franco, J., Arimura, H., Marneffe, J., Vandooren, A., Ragnarsson, L., Wu, Z., Claes, D., Litta, E. D., Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B.: "Novel Low Thermal Budget Gate Stack Solutions for BTI Reliability in Future Logic Device Technologies"; Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Dresden, Germany; 15.09.2021 - 17.09.2021; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2021), ISBN: 978-1-6654-4998-4; S. 1 - 4. | |
| 1884. | Kosina, H., Seiler, H., Sverdlov, V.: "Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 2 - 3. | |
| 1883. | Kosik, R., Cervenka, J., Kosina, H.: "Open Boundary Conditions for the Wigner and the Characteristic von Neumann Equation"; Vortrag: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2021), ISBN: 978-3-9504738-2-7; S. 42 - 43. | |
| 1882. | Wen, C., Illarionov, Yu., Frammelsberger, W., Knobloch, T., Grasser, T., Lanza, M.: "Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films"; Vortrag: APS March Meeting, College Park, MD, USA; 15.03.2021 - 19.03.2021; in: "Bulletin of the American Physical Society", (2021). | |
| 1881. | Ribeiro, F., Rupp, K., Grasser, T.: "Parallel Solver Study for Solving the Boltzmann Transport Equation using Spherical Harmonics Expansions on Supercomputers"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 97 - 98. | |
| 1880. | Ender, J., Fiorentini, S., Sverdlov, V., Goes, W., Orio, R., Selberherr, S.: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Vortrag: SPIE Spintronics, San Diego, CA, USA - virtual (eingeladen); 01.08.2021 - 05.08.2021; in: "Proceedings of SPIE Spintronics", (2021), S. 11805-53. | |
| 1879. | Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 150 - 154. https://doi.org/10.1109/SISPAD54002.2021.9592561 | |
| 1878. | Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: "Reinforcement Learning to Reduce Failures in SOT-MRAM Switching"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 15.09.2021 - 15.10.2021; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6. https://doi.org/10.1109/IPFA53173.2021.9617362 | |
| 1877. | Filipovic, L.: "Reliability and Stability of MEMS Microheaters for Gas Sensors"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), online (eingeladen); 04.10.2021 - 28.10.2021; in: "2021 IEEE International Integrated Reliability Workshop (IIRW)", (2021), ISBN: 978-1-6654-1794-5. https://doi.org/10.1109/IIRW53245.2021.9635162 | |
| 1876. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: "Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; S. 51 - 52. | |
| 1875. | Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 155 - 158. https://doi.org/10.1109/SISPAD54002.2021.9592559 | |
| 1874. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices"; Vortrag: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 28.11.2021 - 03.12.2021; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; S. 12 - 13. | |
| 1873. | Wilhelmer, C., Jech, M., Waldhör, D., El-Sayed, A.-M., Cvitkovich, L., Grasser, T.: "Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6; S. 243 - 246. https://doi.org/10.1109/ESSDERC53440.2021.9631833 | |
| 1872. | Rodrigues, F., Aguinsky, L.F., Toifl, A., Scharinger, A., Hössinger, A., Weinbub, J.: "Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), S. 229 - 232. https://doi.org/10.1109/SISPAD54002.2021.9592583 | |
| 1871. | Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V.: "Temperature Increase in MRAM at Writing: A Finite Element Approach"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), S. 133 - 134. | |
| 1870. | Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B.: "A Compact Physics Analytical Model for Hot-Carrier Degradation"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 7. https://doi.org/10.1109/IRPS45951.2020.9128327 | |
| 1869. | Lenz, C., Scharinger, A., Hössinger, A., Weinbub, J.: "A Novel Surface Mesh Coarsening Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes"; Vortrag: International Conferences on Scientific Computing in Electrical Engineering (SCEE), Eindhoven, The Netherlands; 16.02.2020 - 20.02.2020; in: "Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE)", (2020), S. 99 - 100. | |
| 1868. | Knobloch, T., Michl, J., Waldhör, D., Illarionov, Yu., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T.: "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures"; Vortrag: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 52 - 53. | |
| 1867. | Kosina, H., Seiler, H., Sverdlov, V.: "Analytical Formulae for the Surface Green´s Functions of Graphene and 1T´ MoS2 Nanoribbons"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 185 - 188. https://doi.org/10.23919/SISPAD49475.2020.9241650 | |
| 1866. | Illarionov, Yu., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T.: "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation"; Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 150 - 151. | |
| 1865. | Ruch, B., Jech, M., Pobegen, G., Grasser, T.: "Applicability of Shockley-Read-Hall Theory for Interface States"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 12.12.2020 - 18.12.2020; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), S. 449 - 452. https://doi.org/10.1109/IEDM13553.2020.9372032 | |
| 1864. | Sverdlov, V., El-Sayed, A.-M., Kosina, H., Selberherr, S.: "Ballistic Conductance in a Topological 1T´-MoS2 Nanoribbon"; Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 28.09.2020 - 02.10.2020; in: "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6; S. 200 - 201. | |
| 1863. | Fiorentini, S., Ender, J., Selberherr, S., Orio, R., Goes, W., Sverdlov, V.: "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 31.03.2020 - 02.04.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 112 - 113. | |
| 1862. | Fiorentini, S., Ender, J., Mohamedou, M., Sverdlov, V., Goes, W., Orio, R., Selberherr, S.: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Vortrag: SPIE Spintronics, San Diego, CA, USA - virtual (eingeladen); 24.08.2020 - 28.08.2020; in: "Proceedings of SPIE Spintronics", (2020), S. 11470-44. | |
| 1861. | Fiorentini, S., Ender, J., Mohamedou, M., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 209 - 212. https://doi.org/10.23919/SISPAD49475.2020.9241657 | |
| 1860. | Illarionov, Yu., Banshchikov, A., Knobloch, T., K Polyushkin, D., Wachter, S., Fedorov, V. V., Suturin, S. M., Stöger-Pollach, M., Vexler, M. I., Sokolov, N. S., Grasser, T.: "Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics"; Vortrag: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in: "Proceedings of the Device Research Conference (DRC)", (2020), S. 1 - 2. https://doi.org/10.1109/DRC50226.2020.9135160 | |
| 1859. | Waltl, M.: "Defect Spectroscopy in SiC Devices"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual (eingeladen); 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), S. 1 - 9. https://doi.org/10.1109/IRPS45951.2020.9129539 | |
| 1858. | Tselios, K., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Waltl, M.: "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), S. 1 - 6. https://doi.org/10.1109/IIRW49815.2020.9312871 | |
| 1857. | Ender, J., Mohamedou, M., Fiorentini, S., Orio, R., Selberherr, S., Goes, W., Sverdlov, V.: "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 213 - 216. https://doi.org/10.23919/SISPAD49475.2020.9241662 | |
| 1856. | Filipovic, L.: "Electromigration Model for Platinum Hotplates"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 315 - 318. https://doi.org/10.23919/SISPAD49475.2020.9241645 | |
| 1855. | Sverdlov, V., Fiorentini, S., Ender, J., Goes, W., Orio, R., Selberherr, S.: "Emerging CMOS Compatible Magnetic Memories and Logic"; Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica (eingeladen); 25.02.2020 - 28.02.2020; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8. https://doi.org/10.1109/LAEDC49063.2020.9073332 | |
| 1854. | Ruch, B., Pobegen, G., Schleich, C., Grasser, T.: "Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129513 | |
| 1853. | Scharinger, A., Manstetten, P., Hössinger, A., Weinbub, J.: "Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 39 - 42. https://doi.org/10.23919/SISPAD49475.2020.9241615 | |
| 1852. | Klemenschits, X., Selberherr, S., Filipovic, L.: "Geometric Advection Algorithm for Process Emulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 59 - 62. https://doi.org/10.23919/SISPAD49475.2020.9241678 | |
| 1851. | Filipovic, L., Selberherr, S.: "Granularity Effects in Electromigration"; Vortrag: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica (eingeladen); 25.02.2020 - 28.02.2020; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8. https://doi.org/10.1109/LAEDC49063.2020.9072963 | |
| 1850. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM"; Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 10.05.2020 - 14.05.2020; in: "Abstracts of the Meeting of the Electrochemical Society (ECS)", MA2020-01/1389 (2020). https://doi.org/10.1149/MA2020-01241389mtgabs | |
| 1849. | Filipovic, L., Selberherr, S.: "Integration of Gas Sensors with CMOS Technology"; Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual (eingeladen); 16.03.2020 - 18.03.2020; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8; S. 294 - 297. https://doi.org/10.1109/EDTM47692.2020.9117828 | |
| 1848. | Illarionov, Yu., Knobloch, T., Waltl, M., Majumdar, S., Soikkeli, M., Kim, W., Wachter, S., K Polyushkin, D., Arpiainen, S., Prunnila, M., Mueller, A., Grasser, T.: "Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N"; Vortrag: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in: "Proceedings of the Electronic Materials Conference (EMC)", (2020), S. 25. | |
| 1847. | Milardovich, D., Jech, M., Waldhör, D., Waltl, M., Grasser, T.: "Machine Learning Prediction of Formation Energies in a-SiO2"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 339 - 342. https://doi.org/10.23919/SISPAD49475.2020.9241609 | |
| 1846. | Sverdlov, V.: "Modeling Spin Transfer Torque Magnetoresistive Memory"; Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 20.10.2020; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), S. 1. | |
| 1845. | Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. E.: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), S. 1 - 4. https://doi.org/10.1109/IIRW49815.2020.9312864 | |
| 1844. | Kosik, R., Cervenka, J., Kosina, H.: "Numerical Solution of the Constrained Wigner Equation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), S. 189 - 191. https://doi.org/10.23919/SISPAD49475.2020.9241624 | |
| 1843. | Kruv, A., Kaczer, B., Grill, A., Gonzalez, M., Franco, J., Linten, D., Goes, W., Grasser, T., De Wolf, I.: "On the Impact of Mechanical Stress on Gate Oxide Trapping"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), S. 1 - 5. https://doi.org/10.1109/IRPS45951.2020.9129541 | |
| 1842. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: "Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current"; Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 16.03.2020 - 18.03.2020; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8; S. 341 - 344. https://doi.org/10.1109/EDTM47692.2020.9117985 | |
| 1841. | Toifl, A.: "Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine"; Vortrag: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (eingeladen); 20.10.2020; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), S. 1. | |
| 1840. | Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M.: "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.05.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9128349 | |
| 1839. | Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 123 - 124. | |
| 1838. | Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I.: "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9128316 | |
| 1837. | Quell, M., Diamantopoulos, G., Hössinger, A., Weinbub, J.: "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes"; Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic - virtual; 08.06.2020 - 11.06.2020; in: "Proceedings of the European Seminar on Computing (ESCO)", (2020), 1 S. | |
| 1836. | Berens, J., Weger, M., Pobegen, G., Aichinger, T., Rescher, G., Schleich, C., Grasser, T.: "Similarities and Differences of BTI in SiC and Si Power MOSFETs"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 29.03.2020 - 02.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129259 | |
| 1835. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: "Single Electron Control by a Uniform Magnetic Field in a Focusing Double-Well Potential Structure"; Vortrag: IEEE International Conference on Nanotechnology (NANO), Montreal, Canada - virtual; 29.07.2020 - 31.07.2020; in: "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2020), ISBN: 978-1-7281-8264-3; S. 73 - 76. https://doi.org/10.1109/NANO47656.2020.9183565 | |
| 1834. | Waltl, M.: "Spectroscopy of Single Defects in Semiconductor Transistors"; Vortrag: International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual (eingeladen); 05.11.2020 - 06.11.2020; in: "Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience)", (2020). | |
| 1833. | Sverdlov, V., El-Sayed, A.-M., Selberherr, S.: "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study"; Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 25.06.2020 - 27.06.2020; in: "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), S. 58. | |
| 1832. | Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Selberherr, S., Sverdlov, V.: "Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents"; Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 13.09.2020 - 16.09.2020; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4; S. 58 - 61. | |
| 1831. | Knobloch, T., Illarionov, Yu., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T.: "The Impact of the Graphene Work Function on the Stability of Flexible GFETs"; Vortrag: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in: "Proceedings of the Electronic Materials Conference (EMC)", (2020). | |
| 1830. | Grasser, T., Kaczer, B., O´Sullivan, B., Rzepa, G., Stampfer, B., Waltl, M.: "The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 28.04.2020 - 30.04.2020; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6; S. 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9129198 | |
| 1829. | Sverdlov, V., Kosina, H.: "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), S. 68 - 69. | |
| 1828. | Illarionov, Yu., Knobloch, T., Grasser, T.: "Where Are the Best Insulators for 2D Field-Effect Transistors?"; Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual (eingeladen); 10.05.2020 - 14.05.2020; in: "Abstracts of the Meeting of the Electrochemical Society (ECS)", MA2020-01/844 (2020). https://doi.org/10.1149/MA2020-0110844mtgabs | |
| 1827. | Orio, R., Makarov, A., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: "A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 S. | |
| 1826. | Gnam, L., Manstetten, P., Quell, M., Rupp, K., Selberherr, S., Weinbub, J.: "A Flexible Shared-Memory Parallel Mesh Adaptation Framework"; Vortrag: International Conference on Computational Science and Its Applications (ICCSA), Saint Petersburg , Russia; 01.07.2019 - 04.07.2019; in: "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2019), ISBN: 978-1-7281-2847-4; S. 158 - 165. https://doi.org/10.1109/ICCSA.2019.00016 | |
| 1825. | Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D.K., Rupp, K.: "A Gauge-Invariant Wigner Equation for General Electromagnetic Fields"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 67 - 68. | |
| 1824. | Aguinsky, L.F., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: "A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 109 - 110. | |
| 1823. | Sverdlov, V., Selberherr, S.: "A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 96. | |
| 1822. | Kosik, R., Kosina, H.: "A Revised Wigner Function Approach for Stationary Quantum Transport"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 70 - 71. | |
| 1821. | Kosina, H., Indalecio, G.: "A Two-Particle Monte Carlo Method for Carrier Transport in the Presence of Electron-Electron Scattering"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 93 - 94. | |
| 1820. | Wu, Z., Franco, J., Claes, D., Rzepa, G., Roussel, P., Collaert, N., Groeseneken, G., Linten, D., Grasser, T., Kaczer, B.: "Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 7. https://doi.org/10.1109/IRPS.2019.8720541 | |
| 1819. | Ceric, H., Zahedmanesh, H.: "Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability"; Poster: IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium; 03.06.2019 - 06.06.2019; in: "Proceedings of the International Interconnect Technology Conference (IITC)", (2019). | |
| 1818. | Aguinsky, L.F., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: "An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching"; Vortrag: International Workshop on Atomic Layer Etching (ALE), Bellevue, WA, USA; 21.07.2019 - 24.07.2019; in: "Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE)", (2019), S. 109. | |
| 1817. | Ceric, H., Selberherr, S., Zahedmanesh, H., Orio, R., Croes, K.: "Assessment of Electromigration in Nano‐Interconnects"; Vortrag: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA (eingeladen); 04.11.2019 - 06.11.2019; in: "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), S. 7. | |
| 1816. | Selberherr, S., Filipovic, L.: "CMOS Compatible Gas Sensors"; Vortrag: International Conference on Materials Science and Engineering, San Francisco, CA, USA (eingeladen); 18.02.2019 - 20.02.2019; in: "Book of Abstracts of the International Conference on Materials Science and Engineering", (2019), 1 S. | |
| 1815. | Sverdlov, V., Selberherr, S.: "CMOS Technology Compatible Magnetic Memories"; Vortrag: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China (eingeladen); 09.10.2019 - 10.10.2019; in: "Proceedings of the International Symposium on Next Generation Electronics (ISNE)", (2019), ISBN: 978-1-7281-2062-1. https://doi.org/10.1109/ISNE.2019.8896421 | |
| 1814. | Filipovic, L., Selberherr, S.: "CMOS-Compatible Gas Sensors"; Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 16.09.2019 - 18.09.2019; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2019), S. 9 - 16. https://doi.org/10.1109/MIEL.2019.8889585 | |
| 1813. | Grasser, T. (2019). CaF2 Insulators for Ultrascaled 2D Field Effect Transistors. Workshop “Wafer-scale Integration of 2D materials,” Aachen, Germany. (reposiTUm) | |
| 1812. | Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019). CaF2 Insulators for Ultrascaled 2D Field Effect Transistors. Graphene Week, Delft, Netherlands (the). (reposiTUm) | |
| 1811. | Waltl, M.: "Characterization and Modeling of Single Charge Trapping in MOS Transistors"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA (eingeladen); 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 9. https://doi.org/10.1109/IIRW47491.2019.8989880 | |
| 1810. | Sverdlov, V., Selberherr, S.: "Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells"; Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; 13.03.2019 - 15.03.2019; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4; S. 151 - 153. https://doi.org/10.1109/EDTM.2019.8731330 | |
| 1809. | Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V.: "Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019. | |
| 1808. | Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V.: "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 57 - 60. https://doi.org/10.1109/SISPAD.2019.8870359 | |
| 1807. | Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: "Comprehensive Modeling of Switching in Perpendicular STT-MRAM"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 107 - 108. | |
| 1806. | Weinbub, J., Nedjalkov, M.: "Computational Strategies for Two-Dimensional Wigner Monte Carlo"; Hauptvortrag: High Performance Computing Conference (HPC), Borovets, Bulgaria (eingeladen); 02.09.2019 - 06.09.2019; in: "Procedings of the High Performance Computing Conference (HPC)", (2019), S. 55 - 56. | |
| 1805. | Kosina, H., Kampl, M.: "Current Estimation in Backward Monte Carlo Simulations"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 129 - 130. | |
| 1804. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: "Effects of Repulsive Dopants on Quantum Transport in a Nanowire"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 115 - 116. | |
| 1803. | Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: "Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 01.04.2019 - 03.04.2019; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), S. 152 - 153. | |
| 1802. | Filipovic, L., Orio, R.: "Electromigration in Nano-Interconnects"; Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA (eingeladen); 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 2. | |
| 1801. | Ballicchia, M., Nedjalkov, M., Weinbub, J.: "Electron Evolution and Boundary Conditions in the Wigner Signed-Particle Approach"; Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 24 - 25. | |
| 1800. | Weinbub, J., Ballicchia, M., Ferry, D.K., Nedjalkov, M.: "Electron Interference and Wigner Function Negativity in Dopant Potential Structures"; Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 14 - 15. | |
| 1799. | Weinbub, J., Ballicchia, M., Nedjalkov, M.: "Electron Interference in Single- and Double-Dopant Potential Structures"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 103 - 104. | |
| 1798. | Illarionov, Yu., Banshchikov, A., Vexler, M., K Polyushkin, D., Wachter, S., Thesberg, M., Sokolov, N. S., Mueller, T., Grasser, T.: "Epitaxial CaF2: a Route towards Scalable 2D Electronics"; Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 10.06.2019 - 15.06.2019; in: "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), S. 69. | |
| 1797. | Klemenschits, X., Selberherr, S., Filipovic, L.: "Fast Volume Evaluation on Sparse Level Sets"; Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 113 - 114. | |
| 1796. | Jech, M., Tyaginov, S., Kaczer, B., Franco, J., Jabs, D., Jungemann, C., Waltl, M., Grasser, T.: "First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019). https://doi.org/10.1109/IEDM19573.2019.8993630 | |
| 1795. | Vandemaele, M., Kaczer, B., Tyaginov, S. E., Stanojevic, Z., Makarov, A., Chasin, A., Bury, E., Mertens, H., Linten, D., Groeseneken, G.: "Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 7. https://doi.org/10.1109/IRPS.2019.8720406 | |
| 1794. | O´Sullivan, B., Ritzenthaler, R., Rzepa, G., Wu, Z., Litta, E. D., Richard, O., Conard, T., Machkaoutsan, V., Fazan, P., Kim, C., Franco, J., Kaczer, B., Grasser, T., Spessot, A., Linten, D., Horiguchi, N.: "Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; S. 1 - 8. https://doi.org/10.1109/IRPS.2019.8720598 | |
| 1793. | Hössinger, A., Manstetten, P., Diamantopoulos, G., Quell, M., Weinbub, J.: "High Performance Computing Aspects in Semiconductor Process Simulation"; Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA (eingeladen); 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 3 - 4. | |
| 1792. | Manstetten, P., Diamantopoulos, G., Gnam, L., Aguinsky, L.F., Quell, M., Toifl, A., Scharinger, A., Hössinger, A., Ballicchia, M., Nedjalkov, M., Weinbub, J.: "High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport"; Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 13. | |
| 1791. | Manstetten, P., Aguinsky, L.F., Selberherr, S., Weinbub, J.: "High-Performance Ray Tracing for Nonimaging Applications"; Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 20. | |
| 1790. | Sverdlov, V., Selberherr, S.: "Hopping in a Multiple Ferromagnetic Terminal Configuration"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 75 - 77. | |
| 1789. | Scharlotta, J., Bersuker, G., Tyaginov, S. E., Young, C., Haase, G., Rzepa, G., Waltl, M., Chohan, T., Iyer, S., Kotov, A., Zambelli, C., Guarin, F., Puglisi, F. M., Ostermaier, C.: "IIRW 2019 Discussion Group II: Reliability for Aerospace Applications"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 4. https://doi.org/10.1109/IIRW47491.2019.8989910 | |
| 1788. | Ender, J., Orio, R., Fiorentini, S., Goes, W., Sverdlov, V.: "Large-Scale Finite Element Micromagnetics Simulations using Open Source Software"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 16.09.2019 - 19.09.2019. | |
| 1787. | Ballicchia, M., Ferry, D.K., Nedjalkov, M., Weinbub, J.: "Linking Wigner Function Negativity to Quantum Coherence in a Nanowire"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 59 - 60. | |
| 1786. | Shah, A., Waltl, M.: "Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits"; Vortrag: IEEE International Conference on Electronics Circuits and Systems (ICECS), Genova, Italy; 27.11.2019 - 29.11.2019; in: "Proceedings of the IEEE International Conference on Electronics Circuits and Systems (ICECS)", (2019), S. 197 - 200. https://doi.org/10.1109/ICECS46596.2019.8964962 | |
| 1785. | Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Claes, D., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: "Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes"; Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore (eingeladen); 12.03.2019 - 15.03.2019; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4; S. 215 - 217. https://doi.org/10.1109/EDTM.2019.8731237 | |
| 1784. | Orio, R., Selberherr, S., Sverdlov, V.: "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques"; Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 11.08.2019 - 15.08.2019; in: "Proceedings of SPIE Spintronics", (2019), S. 11090-123. | |
| 1783. | Waldhör, D., Wimmer, Y., El-Sayed, A.-M., Goes, W., Waltl, M., Grasser, T.: "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 5. https://doi.org/10.1109/IIRW47491.2019.8989889 | |
| 1782. | Filipovic, L.: "Modeling and Simulation of Atomic Layer Deposition"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 323 - 326. https://doi.org/10.1109/SISPAD.2019.8870462 | |
| 1781. | Makarov, A., Kaczer, B., Roussel, Ph., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. E.: "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3. https://doi.org/10.1109/IRPS.2019.8720584 | |
| 1780. | Toifl, A., Quell, M., Hössinger, A., Babayan, A., Selberherr, S., Weinbub, J.: "Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 327 - 330. https://doi.org/10.1109/SISPAD.2019.8870443 | |
| 1779. | Makarov, A., Roussel, Ph., Bury, E., Vandemaele, M., Spessot, A., Linten, D., Kaczer, B., Tyaginov, S. E.: "On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), ISBN: 978-1-7281-2203-8. https://doi.org/10.1109/IIRW47491.2019.8989882 | |
| 1778. | Kosik, R., Thesberg, M., Weinbub, J., Kosina, H.: "On the Consistency of the Stationary Wigner Equation"; Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 30 - 31. | |
| 1777. | Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J.: "Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation"; Vortrag: High Performance Computing Conference (HPC), Borovets, Bulgaria; 02.09.2019 - 06.09.2019; in: "Procedings of the High Performance Computing Conference (HPC)", (2019), S. 45. | |
| 1776. | Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: "Parallelized Construction of Extension Velocities for the Level-Set Method"; Vortrag: International Conference on Parallel Processing and Applied Mathematics (PPAM), Bialystok, Poland; 08.09.2019 - 11.09.2019; in: "Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM)", (2019), S. 42. | |
| 1775. | Quell, M., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J.: "Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 335 - 338. https://doi.org/10.1109/SISPAD.2019.8870482 | |
| 1774. | Majumdar, S., Soikkeli, M., Kim, W., Illarionov, Yu., Wachter, S., K Polyushkin, D., Arpiainen, S., Prunnila, M.: "Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform"; Poster: Graphene Week, Helsinki, Finland; 23.09.2019 - 27.09.2019. | |
| 1773. | Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S. E., Grasser, T., Waltl, M.: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019). https://doi.org/10.1109/IEDM19573.2019.8993446 | |
| 1772. | Tyaginov, S. E., Chasin, A., Makarov, A., El-Sayed, A.-M., Jech, M., De Keersgieter, A., Eneman, G., Vandemaele, M., Franco, J., Linten, D., Kaczer, B.: "Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs"; Vortrag: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), S. 565 - 566. | |
| 1771. | Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D.K., Rupp, K.: "Posedness of Stationary Wigner Equation"; Vortrag: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in: "Book of Abstracts of the International Wigner Workshop (IW2)", (2019), ISBN: 978-3-9504738-1-0; S. 32 - 33. | |
| 1770. | Ballicchia, M., Nedjalkov, M., Selberherr, S., Weinbub, J.: "Potentials for Single Electron State Processing"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 111 - 112. | |
| 1769. | Klemenschits, X., Manstetten, P., Filipovic, L., Selberherr, S.: "Process Simulation in the Browser: Porting ViennaTS using WebAssembly"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 04.09.2019 - 06.09.2019; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; S. 339 - 342. https://doi.org/10.1109/SISPAD.2019.8870374 | |
| 1768. | Diamantopoulos, G., Manstetten, P., Gnam, L., Simonka, V., Aguinsky, L.F., Quell, M., Toifl, A., Hössinger, A., Weinbub, J.: "Recent Advances in High Performance Process TCAD"; Vortrag: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 25.02.2019 - 01.03.2019; in: "CSE19 Abstracts", (2019), S. 335. | |
| 1767. | Illarionov, Yu., Grasser, T.: "Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China (eingeladen); 02.07.2019 - 05.07.2019; in: "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), S. 1 - 6. https://doi.org/10.1109/IPFA47161.2019.8984799 | |
| 1766. | Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V.: "Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; S. 69 - 71. | |
| 1765. | Orio, R., Selberherr, S., Ender, J., Fiorentini, S., Goes, W., Sverdlov, V.: "Robustness of the Two-Pulse Switching Scheme for SOT-MRAM"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 01.12.2019 - 06.12.2019; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; S. 54 - 55. | |
| 1764. | Sverdlov, V., Selberherr, S.: "Shot Noise in Magnetic Tunnel Junctions"; Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 06.07.2019 - 09.07.2019; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II", (2019), ISBN: 978-1-950492-09-1; S. 19 - 22. | |
| 1763. | Makarov, A., Kaczer, B., Roussel, Ph., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Jech, M., Grasser, T., Linten, D., Tyaginov, S. E.: "Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs"; Vortrag: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 02.09.2019 - 05.09.2019; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), S. 609 - 610. | |
| 1762. | Sverdlov, V., Selberherr, S.: "Spin-Based CMOS-Compatible Memories"; Hauptvortrag: International Nanoelectronics Conference (INEC), Kuching, Malaysia (eingeladen); 03.07.2019 - 05.07.2019; in: "Proceedings of the International Nanoelectronics Conferences (INEC)", (2019), ISSN: 2159-3531. https://doi.org/10.1109/INEC.2019.8853848 | |
| 1761. | Sverdlov, V.: "Spin-based Electronics: Recent Developments and Trends"; Vortrag: International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN), Yaroslavl, Russia (eingeladen); 26.08.2019 - 29.08.2019; in: "Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN)", (2019), S. 7. | |
| 1760. | Sverdlov, V., Selberherr, S.: "Spintronic Memories"; Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China (eingeladen); 16.12.2019 - 19.12.2019; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2019), S. 19 - 21. | |
| 1759. | Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M.: "Statistical Characterization of BTI and RTN using Integrated pMOS Arrays"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 13.10.2019 - 17.10.2019; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), S. 1 - 5. https://doi.org/10.1109/IIRW47491.2019.8989904 | |
| 1758. | Selberherr, S.: "Status and Future of Solid-State Non-Volatile Memory"; Vortrag: International Conference on Frontier Sciences, Beijing, China (eingeladen); 06.11.2019 - 07.11.2019; in: "Book of Abstracts of the International Conference on Frontier Sciences", (2019), S. 97. | |
| 1757. | Makarov, A., Kaczer, B., Roussel, Ph., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Jech, M., Grasser, T., Linten, D., Tyaginov, S. E.: "Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9; S. 262 - 265. https://doi.org/10.1109/ESSDERC.2019.8901721 | |
| 1756. | Cervenka, J., Weinbub, J.: "Superposed States and the Wigner Approach"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), S. 50. | |
| 1755. | Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: "Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 23.09.2019 - 26.09.2019; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558; S. 146 - 149. https://doi.org/10.1109/ESSDERC.2019.8901780 | |
| 1754. | Aguinsky, L.F., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: "Three-Dimensional TCAD for Atomic Layer Processing"; Vortrag: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), S. 5. | |
| 1753. | Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: "Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM"; Vortrag: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 19.05.2019 - 22.05.2019; in: "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), S. 34. | |
| 1752. | Tyaginov, S., El-Sayed, A., Makarov, A., Chasin, A., Arimura, H., Vandemaele, M., Jech, M., Capogreco, E., Witters, L., Grill, A., De Keersgieter, A., Eneman, G., Linten, D., Kaczer, B.: "Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 07.12.2019 - 11.12.2019; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2; S. 498 - 501. https://doi.org/10.1109/IEDM19573.2019.8993644 | |
| 1751. | Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J.: "A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing"; Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 03.06.2018 - 08.06.2018; in: "Proc. 6th European Seminar on Computing", (2018), 1 S. | |
| 1750. | Sverdlov, V., Selberherr, S.: "A Single-Spin Switch"; Vortrag: International Electron Devices & Materials Symposium (IEDMS), Keelung, Taiwan (eingeladen); 13.11.2018 - 15.11.2018; in: "Conference Abstract Book", (2018). | |
| 1749. | Benam, M., Nedjalkov, M., Selberherr, S.: "A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach"; Vortrag: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in: "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), S. 34 - 35. | |
| 1748. | Sverdlov, V., Selberherr, S.: "Actual Problems in the Field of Spintronics"; Vortrag: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany (eingeladen); 08.10.2018 - 10.10.2018; in: "Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018", (2018), S. 40. | |
| 1747. | Illarionov, Yu., Smithe, K., Waltl, M., Grady, R., Deshmukh, R.G., Pop, E., Grasser, T.: "Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio"; Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 24.06.2018 - 27.06.2018; in: "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0. https://doi.org/10.1109/DRC.2018.8442242 | |
| 1746. | Franco, J., Wu, Z., Rzepa, G., Vandooren, A., Arimura, H., Ragnarsson, L., Hellings, G., Brus, S., Cott, D., De Heyn, V., Groeseneken, G., Horiguchi, N., Ryckaert, J., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: "BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 01.12.2018 - 05.12.2018; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2018), ISBN: 978-1-7281-1987-8; S. 34.2.1 - 34.2.4. https://doi.org/10.1109/IEDM.2018.8614559 | |
| 1745. | Tyaginov, S. E., Jech, M., Rzepa, G., Grill, A., El-Sayed, A.-M., Pobegen, G., Makarov, A., Grasser, T.: "Border Trap Based Modeling of SiC Transistor Transfer Characteristics"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3. https://doi.org/10.1109/IIRW.2018.8727083 | |
| 1744. | Filipovic, L.: "CMOS-Compatible Semiconductor-Based Gas Sensors"; Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Whistler, British Columbia, Canada (eingeladen); 09.05.2018 - 11.05.2018; in: "Book of Abstracts of Emerging Technologies Communication Microsystems Optoelectronics Sensors", (2018). | |
| 1743. | Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B.: "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), S. 2A.2-1 - 2A.2-10. | |
| 1742. | Illarionov, Yu., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T.: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 29.05.2018 - 02.06.2018. | |
| 1741. | Gnam, L., Manstetten, P., Selberherr, S., Weinbub, J.: "Comparison of High-Performance Graph Coloring Algorithms"; Vortrag: Vienna Young Scientists Symposium (VSS), Vienna, Austria; 07.06.2018 - 08.06.2018; in: "Proceedings of the Vienna Young Scientists Symposium", (2018), ISBN: 978-3-9504017-8-3; S. 30 - 31. | |
| 1740. | Sverdlov, V., Selberherr, S.: "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 107 - 108. | |
| 1739. | Vandemaele, M., Kaczer, B., Stanojevic, Z., Tyaginov, S. E., Makarov, A., Chasin, A., Mertens, H., Linten, D., Groeseneken, G.: "Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3. https://doi.org/10.1109/IIRW.2018.8727081 | |
| 1738. | Kosina, H., Kampl, M.: "Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 18 - 21. https://doi.org/10.1109/SISPAD.2018.8551734 | |
| 1737. | Weinbub, J., Ballicchia, M., Nedjalkov, M.: "Electron Interference in a Double-Dopant Potential Structure"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 52 - 53. | |
| 1736. | Sverdlov, V., Selberherr, S.: "Electron Spin for Modern and Future Microelectronics"; Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia (eingeladen); 01.10.2018 - 05.10.2018; in: "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018", (2018), ISBN: 978-5-317-05917-0; S. 7. | |
| 1735. | Foster, S., Thesberg, M., Vargiamidis, V., Neophytou, N.: "Electronic Transport Simulations for Advanced Thermoelectric Materials"; Poster: Thermoelectric Network UK Meeting, Edinburgh, UK; 14.02.2018. | |
| 1734. | Lahlalia, A., Le Neel, O., Shankar, R., Selberherr, S., Filipovic, L.: "Enhanced Sensing Performance of Integrated Gas Sensor Devices"; Poster: EUROSENSORS, Graz, Austria; 09.09.2018 - 12.09.2018; in: "Proceedings of EUROSENSORS 2018", (2018), ISBN: 978-3-00-025217-4; Paper-Nr. 1508, 5 S. https://doi.org/10.3390/proceedings2131508 | |
| 1733. | Gnam, L., Selberherr, S., Weinbub, J.: "Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms"; Vortrag: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in: "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), S. 52. | |
| 1732. | Puschkarsky, K., Reisinger, H., Schlünder, C., Gustin, W., Grasser, T.: "Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Dresden, Germany; 03.09.2018 - 06.09.2018; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2018), S. 218 - 221. | |
| 1731. | Sverdlov, V., Makarov, A., Selberherr, S.: "Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 124 - 125. | |
| 1730. | Rupp, K., Rudolf, F., Weinbub, J.: "Features of ViennaCL in PETSc"; Vortrag: Austrian HPC Meeting (AHPC), Linz; 19.02.2018 - 21.02.2018; in: "Book of Abstracts of the 2018 Austrian HPC Meeting (AHPC)", (2018), S. 18. | |
| 1729. | Makarov, A., Sverdlov, V., Selberherr, S.: "Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 186 - 189. https://doi.org/10.1109/SISPAD.2018.8551716 | |
| 1728. | Hajian, S., Khakbaz, P., Moshayedi, M., Maddipatla, D., Narakathu, B., Turkani, V., Bazuin, B., Pourfath, M., Atashbar, M. (2018). Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti₃C₂T͓x MXene as Ammonia Sensor: A First-Principles Study. In 2018 IEEE SENSORS (pp. 1–4), New Delhi, India. https://doi.org/10.1109/ICSENS.2018.8589699 (reposiTUm) | |
| 1727. | Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A.: "Impact of the Effective Mass on the Mobility in Si Nanowire Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 297 - 300. https://doi.org/10.1109/SISPAD.2018.8551630 | |
| 1726. | Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J.: "Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide"; Vortrag: International Conference on Microelectronic Devices and Technologies (MicDAT), Barcelona, Spain; 20.06.2018 - 22.06.2018; in: "Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT)", (2018), S. 42 - 44. | |
| 1725. | Sverdlov, V., Makarov, A., Selberherr, S.: "Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM"; Poster: Micromagnetics: Analysis, Numerics, Applications (MANA), Vienna; 08.11.2018 - 09.11.2018; in: "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018", (2018), S. 32. | |
| 1724. | Filipovic, L., Orio, R.: "Modeling the Influence of Grains and Material Interfaces on Electromigration"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 83 - 87. https://doi.org/10.1109/SISPAD.2018.8551746 | |
| 1723. | Indalecio, G., Kosina, H.: "Monte Carlo Simulation of Electron-electron Interactions in Bulk Silicon"; Poster: The 12th International Conference on Scientific Computing in Electrical Engineering (SCEE 2018), Taormina; 23.09.2018 - 27.09.2018; in: "Book of Abstracts of The 12th International Conference on Scientific Computing in Electrical Engineering", (2018), S. 97 - 98. | |
| 1722. | Lee, J., Medina-Bailón, C., Berrada, S., Carillo-Nunez, H., Sadi, T., Georgiev, V., Nedjalkov, M., Selberherr, S., Asenov, A.: "Multi-Scale Simulation Study of the Strained Si Nanowire FETs"; Vortrag: IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA; 14.10.2018 - 17.10.2018; in: "Proceedings of IEEE Nanotechnology Materials and Devices Conference (NMDC)", (2018), ISBN: 978-1-5386-1016-9. https://doi.org/10.1109/NMDC.2018.8605884 | |
| 1721. | Ghosh, J., Osintsev, D., Sverdlov, V., Ganguly, S.: "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 79 - 80. | |
| 1720. | Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: "On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 07.10.2018 - 11.10.2018; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3; S. 1 - 4. https://doi.org/10.1109/IIRW.2018.8727089 | |
| 1719. | Ballicchia, M., Weinbub, J., Dimov, I., Nedjalkov, M.: "Recent Advances of the Wigner Signed-Particle Approach"; Vortrag: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria (eingeladen); 18.12.2018 - 20.12.2018; in: "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357; S. 18 - 19. | |
| 1718. | Illarionov, Yu., Molina- Mendoza, A.J., Waltl, M., Knobloch, T., Furchi, M. M., Mueller, T., Grasser, T.: "Reliability of next-generation field-effect transistors with transition metal dichalcogenides"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8; 6 S. https://doi.org/10.1109/IRPS.2018.8353605 | |
| 1717. | Sverdlov, V., Makarov, A., Selberherr, S.: "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field"; Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2018 - 11.07.2018; in: "Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2018), ISBN: 978-1-941763-81-0; S. 30 - 32. | |
| 1716. | Benam, M., Wołoszyn, M., Selberherr, S.: "Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach"; Vortrag: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria; 18.12.2018 - 20.12.2018; in: "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), ISSN: 1313-3357; S. 20 - 21. | |
| 1715. | Sverdlov, V., Selberherr, S.: "Shot Noise Enhancement at Spin-dependent Hopping"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 25.11.2018 - 30.11.2018; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8; S. 6 - 7. | |
| 1714. | Neophytou, N., Foster, S., Vargiamaidis, V., Chakraborty, D., Oliveira, L., Kumarasinghe, C., Thesberg, M.: "Simulation Studies of Nanostructured Thermoelectric Materials"; Vortrag: IEEE International Conference on Nanotechnology (NANO), Cork, Ireland; 23.07.2018 - 26.07.2018; in: "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2018). https://doi.org/10.1109/nano.2018.8626378 | |
| 1713. | Sverdlov, V., Selberherr, S.: "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor"; Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 19.08.2018 - 23.08.2018; in: "Proceedings of SPIE Spintronics", (2018), S. 10732-112. | |
| 1712. | Sverdlov, V., Selberherr, S.: "Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in: "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), S. 49. | |
| 1711. | Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J.: "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; S. 336 - 339. https://doi.org/10.1109/SISPAD.2018.8551728 | |
| 1710. | Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A.: "Study of the 1D Scattering Mechanisms´ Impact on the Mobility in Si Nanowire Transistors"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 15 - 16. | |
| 1709. | Woerle, J., Simonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., Grossner, U.: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Vortrag: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 02.09.2018 - 06.09.2018; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018). | |
| 1708. | Sverdlov, V., Makarov, A., Selberherr, S.: "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 57 - 58. | |
| 1707. | Filipovic, L., Lahlalia, A., Selberherr, S.: "System-on-Chip Sensor Integration in Advanced CMOS Technology"; Vortrag: 233rd ECS Meeting (ECS), Seattle, Washington, USA (eingeladen); 13.05.2018 - 17.05.2018; in: "Proceedings of the 233rd ECS Meeting (ECS)", (2018), ISSN: 2151-2043. | |
| 1706. | Makarov, A., Sverdlov, V., Selberherr, S.: "Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in: "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), S. 51. | |
| 1705. | Makarov, A., Sverdlov, V., Selberherr, S.: "Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells"; Vortrag: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 13.05.2018 - 17.05.2018; in: "Proceedings of the 233rd ECS Meeting (ECS)", 85/213 (2018), ISSN: 2151-2043. | |
| 1704. | Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H.: "Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA (eingeladen); 11.03.2018 - 15.03.2018; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), S. 3B.5-1 - 3B.5-10. | |
| 1703. | Klemenschits, X., Selberherr, S., Filipovic, L.: "Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0; S. 65 - 66. | |
| 1702. | Sverdlov, V., Selberherr, S.: "A Single-Spin Switch"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 93 - 94. | |
| 1701. | Manstetten, P., Hössinger, A., Weinbub, J., Selberherr, S.: "Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 73 - 76. https://doi.org/10.23919/SISPAD.2017.8085267 | |
| 1700. | Illarionov, Yu., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T.: "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs"; Vortrag: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 28.02.2017 - 02.03.2017; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4; S. 114 - 115. https://doi.org/10.1109/EDTM.2017.7947532 | |
| 1699. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment"; Vortrag: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2017 - 11.07.2017; in: "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9; S. 142 - 146. | |
| 1698. | Chasin, A., Franco, J., Kaczer, B., Putcha, V., Weckx, P., Ritzenthaler, R., Mertens, H., Horiguchi, N., Linten, D., Rzepa, G.: "BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 5C-4.1 - 5C-4.7. | |
| 1697. | Kaczer, B., Rzepa, G., Franco, J., Weckx, P., Chasin, A., Putcha, V., Bury, E., Simicic, M., Roussel, Ph. J., Hellings, G., Veloso, A., Matagne, P., Grasser, T., Linten, D.: "Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 2D-6.1 - 2D-6.7. | |
| 1696. | Grill, A., Stampfer, B., Waltl, M., Im, K.-S., Lee, J., Ostermaier, C., Ceric, H., Grasser, T.: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 3B-5.1 - 3B-5.5. https://doi.org/10.1109/IRPS.2017.7936285 | |
| 1695. | Franco, J., Putcha, V., Vais, A., Sioncke, S., Waldron, N., Zhou, D., Rzepa, G., Roussel, P., Groeseneken, G., Heyns, M., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: "Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 02.12.2017 - 06.12.2017; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), 4 S. https://doi.org/10.1109/IEDM.2017.8268347 | |
| 1694. | Ballicchia, M., Weinbub, J., Nedjalkov, M., Selberherr, S.: "Classical and Quantum Electron Evolution with a Repulsive Dopant"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 105 - 106. | |
| 1693. | Manstetten, P., Simonka, V., Diamantopoulos, G., Gnam, L., Makarov, A., Hössinger, A., Weinbub, J.: "Computational and Numerical Challenges in Semiconductor Process Simulation"; Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 46. | |
| 1692. | Sverdlov, V., Weinbub, J., Selberherr, S.: "Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 26.11.2017 - 01.12.2017; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1; S. 87 - 88. | |
| 1691. | Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T.: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. XT-11.1 - XT-11.6. | |
| 1690. | Sverdlov, V., Weinbub, J., Selberherr, S.: "Electron Spin at Work in Modern and Emerging Devices"; Vortrag: Energy-Materials-Nanotechnology Meeting on Quantum (EMN), Wien, Austria (eingeladen); 18.06.2017 - 22.06.2017; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN)", (2017), S. 31 - 33. | |
| 1689. | Illarionov, Yu., Waltl, M., Smithe, K., Pop, E., Grasser, T.: "Encapsulated MoS2 FETs with Improved Performance and Reliability"; Vortrag: GRAPCHINA, Nanjing, China; 24.09.2017 - 26.09.2017; in: "Proceedings of the GRAPCHINA 2017", (2017), 1 S. | |
| 1688. | Sverdlov, V., Weinbub, J., Selberherr, S.: "Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach"; Vortrag: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 26.06.2017 - 30.06.2017; in: "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0; S. 132 - 133. | |
| 1687. | Diamantopoulos, G., Weinbub, J., Hössinger, A., Selberherr, S.: "Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems"; Vortrag: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 03.07.2017 - 06.07.2017; in: "Proceedings of the International Conference on Computational Science and Its Applications (ICCSA)", (2017), ISBN: 978-1-5386-3893-4; S. 1 - 8. https://doi.org/10.1109/ICCSA.2017.7999648 | |
| 1686. | Mills, R., Adams, M., Brown, J., Fabien, M., Isaac, T., Knepley, M., Rupp, K., Smith, B., Zhang, H.: "Experiences, Optimizations, and Future Directions with Petsc on the 2nd Generation ("Knights Landing") Intel Xeon Phi Processor"; Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 370 - 371. | |
| 1685. | Selberherr, S., Windbacher, T., Makarov, A., Sverdlov, V.: "Exploiting Spin-Transfer Torque for Non-Volatile Computing"; Vortrag: World Congress of Smart Materials (WCSM), Bangkok (eingeladen); 16.03.2017 - 18.03.2017; in: "Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017", (2017), S. 130. | |
| 1684. | Foster, S., Thesberg, M., Neophytou, N.: "Fully Quantum Mechanical Transport Simulations for the Calculation of the Thermoelectric Power Factor in Nanocomposite Materials"; Vortrag: European Conference on Thermoelectrics (ECT), Padova, Italy; 25.09.2017 - 27.09.2017; in: "Book of Abstracts 15th European Conference on Thermoelectrics", (2017). | |
| 1683. | Kampl, M., Kosina, H., Baumgartner, O.: "Hot Carrier Study Including e-e Scattering Based on a Backward Monte Carlo Method"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 293 - 296. https://doi.org/10.23919/SISPAD.2017.8085322 | |
| 1682. | Makarov, A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T.: "Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 02.12.2017 - 06.12.2017; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9; S. 310 - 313. https://doi.org/10.1109/IEDM.2017.8268381 | |
| 1681. | Knobloch, T., Rzepa, G., Illarionov, Yu., Waltl, M., K Polyushkin, D., Pospischil, A., Furchi, M. M., Müller, T., Grasser, T.: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; Vortrag: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA (eingeladen); 01.10.2017 - 05.10.2017; in: "Meeting Abstracts", ECS, MA2017-02(14): 837 (2017), 2 S. | |
| 1680. | Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B.: "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4; S. 6A-2.1 - 6A-2.6. | |
| 1679. | Kampl, M., Kosina, H.: "Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands"; Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 147 - 148. | |
| 1678. | Sverdlov, V., Mahmoudi, H., Windbacher, T., Makarov, A., Weinbub, J., Selberherr, S.: "MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications"; Vortrag: Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN), Milan, Italy (eingeladen); 14.08.2017 - 18.08.2017; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN)", (2017), S. 33 - 34. | |
| 1677. | Filipovic, L., de Orio, R.L., Zisser, W. H., Selberherr, S.: "Modeling Electromigration in Nanoscaled Copper Interconnects"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 161 - 164. https://doi.org/10.23919/SISPAD.2017.8085289 | |
| 1676. | Sverdlov, V., Weinbub, J., Selberherr, S.: "Modeling Spin-Dependent Phenomena for New Device Applications"; Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA (eingeladen); 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 45 - 46. | |
| 1675. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 17.09.2017 - 22.09.2017; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017). | |
| 1674. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: "Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6; S. 125 - 128. https://doi.org/10.23919/SISPAD.2017.8085280 | |
| 1673. | Sadi, T., Towie, E., Nedjalkov, M., Asenov, A., Selberherr, S.: "Monte Carlo Particles in Quantum Wires: Effects of the Confinement"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 05.06.2017 - 09.06.2017; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2017), S. 89 - 90. | |
| 1672. | Thesberg, M., Kosina, H.: "NEGF Through Finite-Volume Discretization"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 173 - 174. | |
| 1671. | Sverdlov, V., Makarov, A., Weinbub, J., Selberherr, S.: "Non-Volatility by Spin in Modern Nanoelectronics"; Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 09.10.2017 - 11.10.2017; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2017), ISBN: 978-1-5386-2562-0; S. 7 - 14. https://doi.org/10.1109/MIEL.2017.8190061 | |
| 1670. | Cervenka, J., Filipovic, L.: "Numerical Aspects of the Deterministic Solution of the Wigner Equation"; Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 42 - 43. | |
| 1669. | Kosik, R., Kampl, M., Kosina, H.: "On the Characteristic Neumann Equation and the Wigner Equation"; Vortrag: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 26 - 27. | |
| 1668. | Knobloch, T., Rzepa, G., Illarionov, Yu., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T.: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 11.09.2017 - 14.09.2017; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), S. 284 - 287. https://doi.org/10.1109/ESSDERC.2017.8066647 | |
| 1667. | Sanan, P., Schenk, O., Bollhoefer, M., Rupp, K., May, D.: "Preconditioners for Stokes Flow with Highly Heterogeneous Viscosity Structure: Saddle-Point Smoothing Via Local Incomplete Factorization"; Vortrag: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in: "CSE17 Abstracts", (2017), S. 258. | |
| 1666. | Illarionov, Yu., Waltl, M., Jech, M., Kim, J., Akinwande, D., Grasser, T.: "Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1; S. 6A-6.1 - 6A-6.6. https://doi.org/10.1109/IRPS.2017.7936338 | |
| 1665. | Sverdlov, V., Selberherr, S.: "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes"; Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland (eingeladen); 28.05.2017 - 30.05.2017; in: "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869; S. 57. | |
| 1664. | Sverdlov, V., Selberherr, S.: "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes"; Vortrag: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; in: "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503. | |
| 1663. | Meller, G., Selberherr, S.: "Simulation of Injection Currents into Disordered Molecular Conductors"; Poster: International Conference on Advanced Nano Materials (ANM), Aveiro, Portugal; 19.07.2017 - 21.07.2017; in: "Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM)", (2017). | |
| 1662. | Sverdlov, V., Weinbub, J., Selberherr, S.: "Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics"; Hauptvortrag: BIT's Annual World Congress of Nano Science & Technology, Fukuoka (eingeladen); 24.10.2017 - 26.10.2017; in: "Abstracts of the BIT's 7th Annual World Congress of Nano Science & Technology-2017", (2017), S. 343. | |
| 1661. | Sverdlov, V., Weinbub, J., Selberherr, S.: "Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study"; Vortrag: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 88 - 90. | |
| 1660. | Sverdlov, V., Weinbub, J., Selberherr, S.: "Spintronics as a Non-Volatile Complement to Nanoelectronics"; Vortrag: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia (eingeladen); 04.10.2017 - 06.10.2017; in: "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), ISBN: 978-961-92933-7-9; 10 S. | |
| 1659. | Ullmann, B., Jech, M., Tyaginov, S. E., Waltl, M., Illarionov, Yu., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T.: "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 04.04.2017 - 06.04.2017; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1; S. XT-10.1 - XT-10.6. https://doi.org/10.1109/IRPS.2017.7936424 | |
| 1658. | Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., Grasser, T.: "Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 08.10.2017 - 12.10.2017; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2017), S. 1 - 5. | |
| 1657. | Gnam, L., Weinbub, J., Hössinger, A., Selberherr, S.: "Towards a Metric for an Automatic Hull Mesh Coarsening Strategy"; Vortrag: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 01.06.2017 - 02.06.2017; in: "Proceedings of the Vienna Young Scientists Symposium", (2017), ISBN: 978-3-9504017-5-2; S. 118 - 119. | |
| 1656. | Gnam, L., Weinbub, J., Rupp, K., Rudolf, F., Selberherr, S.: "Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation"; Vortrag: International Meshing Roundtable (IMR), Barcelona, Spanien; 18.09.2017 - 21.09.2017; in: "Proceedings of the 26th International Meshing Roundtable (IMR26)", (2017), 5 S. | |
| 1655. | Rudolf, F., Morhammer, A., Rupp, K., Weinbub, J.: "VSC School Project: Performance Enhancements of Algebraic Multigrid Methods in ViennaCL"; Vortrag: Austrian HPC Meeting (AHPC), Grundlsee; 01.03.2017 - 03.03.2017; in: "Book of Abstracts of the 2017 Austrian HPC Meeting (AHPC)", (2017), 1 S. | |
| 1654. | Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S.: "Wigner Analysis of Surface Roughness in Quantum Wires"; Vortrag: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 40 - 41. | |
| 1653. | Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S.: "Wigner Modelling of Surface Roughness in Quantum Wires"; Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), S. 171 - 172. | |
| 1652. | Weinbub, J., Nedjalkov, M., Dimov, I., Selberherr, S.: "Wigner-Signed Particles Study of Double Dopant Quantum Effects"; Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in: "Book of Abstracts of the International Wigner Workshop (IW2)", Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4; S. 50 - 51. | |
| 1651. | Djuricic, A., Puttonen, E., Dorninger, P., Nothegger, C., Harzhauser, M., Mandic, O., Székely, B., Pfeifer, N. (2016). 3D Laser Scanning and Paleontology. In Proceedings (pp. 100–101), Wien, Austria. (reposiTUm) | |
| 1650. | Rupp, K., Weinbub, J.: "A Computational Scientist's Perspective on Current and Future Hardware Architectures"; Vortrag: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in: "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), S. 24. | |
| 1649. | Sharma, P., Tyaginov, S. E., Rauch, S. E., Franco, J., Kaczer, B., Makarov, A., Vexler, M., Grasser, T.: "A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 15.09.2016; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3; S. 428 - 431. https://doi.org/10.1109/ESSDERC.2016.7599677 | |
| 1648. | Papaleo, S., Ceric, H.: "A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8; S. PA-2-1 - PA-2-4. https://doi.org/10.1109/IRPS.2016.7574626 | |
| 1647. | Ghiassi, N., Mahdavi, A. (2016). A Novel Approach to High-Resolution Urban-Level Building Energy Modeling. In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm) | |
| 1646. | Illarionov, Yu., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M., Grasser, T.: "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs"; Vortrag: Device Research Conference, Newark, Delaware, USA; 19.06.2016 - 22.06.2016; in: "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6; S. 89 - 90. | |
| 1645. | Proskurnina, O., Pont, U., Schuss, M., Heiduk, E., Schober, P., Mahdavi, A. (2016). A Computational Inquiry Into the Application of Vacuum Glazing in Building Retrofit. In Proceedings of Vienna Young Scientists Symposium 2016 (pp. 26–27), Vienna, Austria. (reposiTUm) | |
| 1644. | Tahmasebi, F., Mahdavi, A. (2016). An Inquiry Into Reliability of Occupant Behaviour Models for Building Performance Simulation. In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm) | |
| 1643. | Giering, K., Rott, G.A., Rzepa, G., Reisinger, H., Puppala, A., Reich, T., Gustin, W., Grasser, T., Jancke, R.: "Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model"; Vortrag: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. 4C-4-1 - 4C-4-6. https://doi.org/10.1109/IRPS.2016.7574540 | |
| 1642. | Thesberg, M., Neophytou, N., Kosina, H.: "Calculating the Power Factor of Nano-Composite Materials from Fully Quantum-Mechanical Large-Scale Simulations"; Vortrag: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in: "Book of Abstracts 14th European Conference on Thermoelectrics", (2016). | |
| 1641. | Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Franco, J., Chiarella, T., Horiguchi, N., Grasser, T.: "Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs"; Vortrag: International Symposium on VLSI Technology, Honolulu, HI, USA; 14.06.2016 - 16.06.2016; in: "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0; S. 208 - 209. | |
| 1640. | Sverdlov, V., Selberherr, S.: "Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures"; Vortrag: APS March Meeting, Baltimore, USA; 14.03.2016 - 18.03.2016; in: "Bulletin of the American Physical Society (APS March Meeting)", 61/1 (2016), ISSN: 0003-0503; 1 S. | |
| 1639. | Filipovic, L., Selberherr, S.: "Effects of the Deposition Process Variation on the Performance of Open TSVs"; Poster: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 2188 - 2195. https://doi.org/10.1109/ECTC.2016.177 | |
| 1638. | Rovitto, M., Ceric, H.: "Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias"; Vortrag: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 550 - 556. https://doi.org/10.1109/ECTC.2016.49 | |
| 1637. | Selinger, A., Rupp, K., Selberherr, S.: "Evaluation of Mobile ARM-Based SoCs for High Performance Computing"; Vortrag: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in: "Proceedings of the 24th High Performance Computing Symposium", (2016), ISBN: 978-1-5108-2318-1; S. 21:1 - 21:7. https://doi.org/10.22360/SpringSim.2016.HPC.022 | |
| 1636. | Neophytou, N., Thesberg, M., Kosina, H.: "Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations"; Vortrag: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in: "Book of Abstracts 14th European Conference on Thermoelectrics", (2016). | |
| 1635. | Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S.: "Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 128 - 129. | |
| 1634. | Naeimi, V., Elefante, S., Cao, S., Wagner, W., Dostálová, A., Bauer-Marschallinger, B. (2016). Geophysical Parameters Retrieval From Sentinel-1 SAR Data: A Case Study for High Performance Computing at EODC. In Proceedings of the 24th High Performance Computing Symposium, Pasadena, CA, USA. (reposiTUm) | |
| 1633. | Ullmann, B., Grill, A., Manstetten, P., Jech, M., Kampl, M., Zisser, W., Filipovic, L., Thesberg, M., Rudolf, F., Windbacher, T., Cervenka, J., Katterbauer, M., Weinbub, J. (2016). Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik. Lange Nacht der Forschung 2016, Wien, Austria. (reposiTUm) | |
| 1632. | Windbacher, T., Ullmann, B., Grill, A., Weinbub, J. (2016). Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik. European Researchers’ Night: beSCIENCEd 2016, Wien, Austria. (reposiTUm) | |
| 1631. | Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., Selberherr, S.: "Impact of Across-Wafer Variation on the Electrical Performance of TSVs"; Vortrag: IEEE International Interconnect Technology Conference (IITC), San Jose, CA, USA; 23.05.2016 - 26.05.2016; in: "Proceedings of the IEEE International Interconnect Technology Conference (IITC)", (2016), ISBN: 978-1-5090-0386-0; S. 130 - 132. https://doi.org/10.1109/IITC-AMC.2016.7507707 | |
| 1630. | Windbacher, T., Malm, B.G., Sverdlov, V., Östling, M., Selberherr, S.: "Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 43. | |
| 1629. | Pont, U., Proskurnina, O., Taheri, M., Kropf, A., Sommer, B., Sommer-Nawara, M., Adam, G., Mahdavi, A. (2016). Input Data Quality for Building Energy Certification: Recent Progress in the EDEN Project. In Proceedings of Vienna Young Scientists Symposium 2016 (p. 2), Vienna, Austria. (reposiTUm) | |
| 1628. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment"; Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 28.08.2016 - 01.09.2016; in: "Proceedings of SPIE Spintronics", (2016), S. 9931-93. | |
| 1627. | Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S.: "Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age"; Vortrag: SISPAD Workshop, Nürnberg, Germany; 05.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016). | |
| 1626. | Sverdlov, V., Makarov, A., Windbacher, T., Selberherr, S.: "Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 315 - 318. https://doi.org/10.1109/SISPAD.2016.7605210 | |
| 1625. | Windbacher, T., Sverdlov, V., Selberherr, S.: "Magnetic Nonvolatile Processing Environment"; Vortrag: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia (eingeladen); 19.05.2016 - 20.05.2016; in: "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", SamGUPS, (2016), S. 42 - 43. | |
| 1624. | Papaleo, S., Rovitto, M., Ceric, H.: "Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall"; Vortrag: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in: "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6; S. 1617 - 1622. https://doi.org/10.1109/ECTC.2016.19 | |
| 1623. | Nedjalkov, M., Weinbub, J., Selberherr, S.: "Modeling Carrier Transport in Nanoscale Semiconductor Devices"; Vortrag: BIT's Annual World Congress of Nano Science & Technology, Singapore (eingeladen); 26.10.2016 - 28.10.2016; in: "Abstracts of the BIT's 6th Annual World Congress of Nano Science & Technology-2016", (2016), S. 377. | |
| 1622. | Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S.: "Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 68 - 69. | |
| 1621. | Filipovic, L., Selberherr, S.: "Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors"; Vortrag: World Congress of Smart Materials (WCSM), Singapore (eingeladen); 04.03.2016 - 06.03.2016; in: "Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016", (2016), S. 517. | |
| 1620. | Grames, J., Fürnkranz-Prskawetz, A., Grass, D., Viglione, A., Blöschl, G. (2016). Modeling the Interaction of Flooding Events and Economic Growth. In VIENNA young SCIENTIST SYMPOSIUM (pp. 92–93), Austria. (reposiTUm) | |
| 1619. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: "Nanoelectronics with Spin"; Vortrag: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates (eingeladen); 04.04.2016 - 06.04.2016; in: "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), S. 19 - 20. | |
| 1618. | Waltl, M., Grill, A., Rzepa, G., Gös, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T.: "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. XT-02-1 - XT-02-6. https://doi.org/10.1109/IRPS.2016.7574644 | |
| 1617. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Novel Magnetic Devices for Memory and Non-Volatile Computing Applications"; Vortrag: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 25.05.2016 - 27.05.2016; in: "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 S. | |
| 1616. | Tyaginov, S. E., Makarov, A., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T.: "On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation"; Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 09.10.2016 - 13.10.2016; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0; S. 95 - 98. https://doi.org/10.1109/IIRW.2016.7904911 | |
| 1615. | Rescher, G., Pobegen, G., Aichinger, T., Grasser, T.: "On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9; S. 10.8.1 - 10.8.4. https://doi.org/10.1109/IEDM.2016.7838392 | |
| 1614. | Kaczer, B., Amoroso, S., Hussin, R., Asenov, A., Franco, J., Weckx, P., Roussel, Ph. J., Rzepa, G., Grasser, T., Horiguchi, N.: "On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 09.10.2016 - 13.10.2016; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3; 3 S. | |
| 1613. | Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V., Brown, A., Millar, C., Asenov, A.: "One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 23 - 26. https://doi.org/10.1109/SISPAD.2016.7605139 | |
| 1612. | Morhammer, A., Rupp, K., Rudolf, F., Weinbub, J.: "Optimized Sparse Matrix-Matrix Multilication for Multi-Core CPUs, GPUs and MICs"; Vortrag: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in: "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), S. 23. | |
| 1611. | Rupp, K., Morhammer, A., Grasser, T., Jüngel, A.: "Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors"; Vortrag: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 16.05.2016 - 18.05.2016; in: "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", Firenze University Press, (2016), ISBN: 978-88-6655-967-2; S. 104. | |
| 1610. | Dembski, F. (2016). Paris Post-Oil: Energy Conscious Urban Infill Development. In Vienna young Scientists Symposium, June 9-10, 2016 (pp. 58–59), Vienna, Austria. (reposiTUm) | |
| 1609. | Zhao, X., Kastlunger, G., Stadler, R. (2016). Quantum Interference Effects in Coherent Electron Transport Through Single Molecule Junctions With Branched Compounds Containing Ferrocene. In TU Wien - VSS Vienna Young Scientists Symposium (pp. 118–119), Wien, Austria. (reposiTUm) | |
| 1608. | Illarionov, Yu., Waltl, M., Furchi, M. M., Müller, T., Grasser, T.: "Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators"; Vortrag: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), S. 5A-1-1 - 5A-1-6. https://doi.org/10.1109/IRPS.2016.7574543 | |
| 1607. | Weinbub, J., Hössinger, A.: "Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach"; Vortrag: High Performance Computing Symposium (HPC), Pasadena, CA, USA; 03.04.2016 - 06.04.2016; in: "Proceedings of the High Performance Computing Symposium (HPC)", (2016), ISBN: 978-1-5108-2318-1; S. 18:1 - 18:8. https://doi.org/10.22360/SpringSim.2016.HPC.052 | |
| 1606. | Nedjalkov, M., Weinbub, J., Dimov, I., Selberherr, S.: "Signed Particle Interpretation for Wigner-Quantum Electron Evolution"; Hauptvortrag: National Congress of Physical Sciences, Sofia, Bulgaria (eingeladen); 29.09.2016 - 02.10.2016; in: "Abstracts Third National Congress of Physical Sciences", (2016), S. 1. | |
| 1605. | Makarov, A., Sverdlov, V., Windbacher, T., Selberherr, S.: "Silicon Spintronics"; Vortrag: International Conference on Electronic Materials (ICEM), Singapur (eingeladen); 04.07.2016 - 08.07.2016; in: "Proceedings of the ICEM 2016", (2016), 1 S. | |
| 1604. | Sverdlov, V., Windbacher, T., Makarov, A., Selberherr, S.: "Silicon Spintronics"; Vortrag: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA (eingeladen); 21.03.2016 - 24.03.2016; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN)", (2016), S. 37 - 38. | |
| 1603. | Wang, L., Sadi, T., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: "Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 34 - 35. | |
| 1602. | Sverdlov, V., Selberherr, S.: "Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 25.01.2016 - 27.01.2016; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8; S. 116 - 117. | |
| 1601. | Ceric, H., Orio, R., Rovitto, M.: "TCAD Approach for the Assessment of Interconnect Reliability"; Vortrag: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany (eingeladen); 30.05.2016 - 01.06.2016; in: "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), S. T21. | |
| 1600. | Illarionov, Yu., Waltl, M., Kim, J., Akinwande, D., Grasser, T.: "Temperature-dependent Hysteresis in Black Phosphorus FETs"; Poster: Graphene Week, Warsaw, Poland; 13.06.2016 - 17.06.2016; in: "Proceedings of the 2016 Graphene Week", (2016). | |
| 1599. | Grasser, T., Waltl, M., Rzepa, G., Gös, W., Wimmer, Y., El-Sayed, A.-M., Shluger, A., Reisinger, H., Kaczer, B.: "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing"; Vortrag: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), S. 5A-2-1 - 5A-2-8. https://doi.org/10.1109/IRPS.2016.7574504 | |
| 1598. | Pont, U., Ghiassi, N., Taheri, M., Bräuer, R., Mahdavi, A. (2016). The BAU_WEB-Project: Exploring the Potential of State-Of-The-Art Web-Technologies for Building Product Data Acquisition and Management. In Proceedings of Vienna Young Scientists Symposium 2016 (pp. 28–29), Vienna, Austria. (reposiTUm) | |
| 1597. | Nedjalkov, M., Weinbub, J., Selberherr, S.: "The Description of Carrier Transport for Quantum Systems"; Vortrag: Energy Materials Nanotechnology Meeting on Quantum, Phuket, Thailand (eingeladen); 08.04.2016 - 11.04.2016; in: "Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum", (2016), S. 41 - 42. | |
| 1596. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 16.09.2016; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3; S. 311 - 314. https://doi.org/10.1109/ESSDERC.2016.7599648 | |
| 1595. | Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 233 - 236. https://doi.org/10.1109/SISPAD.2016.7605190 | |
| 1594. | Sverdlov, V., Ghosh, J., Selberherr, S.: "Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 7. | |
| 1593. | Ettlinger, A., Retscher, G. (2016). Use of Magnetic Fields in Combination With Wi-Fi and RFID for Indoor Positioning. In VIENNA young SCIENTISTS SYMPOSIUM 2016 (pp. 84–85), Wien, Austria. (reposiTUm) | |
| 1592. | Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S.: "Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9; S. 265 - 268. https://doi.org/10.1109/SISPAD.2016.7605198 | |
| 1591. | Karner, M., Baumgartner, O., Stanojevic, Z., Schanovsky, F., Strof, G., Kernstock, Ch., Karner, H. W., Rzepa, G., Grasser, T.: "Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9; S. 30.7.1 - 30.7.4. https://doi.org/10.1109/IEDM.2016.7838516 | |
| 1590. | Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S.: "Wigner Modelling of Quantum Wires"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA (eingeladen); 04.12.2016 - 09.12.2016; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4; S. 2. | |
| 1589. | Wang, L., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: "3D Electro-Thermal Simulations of Bulk FinFETs with Statistical Variations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 112 - 115. https://doi.org/10.1109/SISPAD.2015.7292271 | |
| 1588. | Wimmer, Y., Gös, W., El-Sayed, A.-M., Shluger, A., Grasser, T.: "A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 44 - 47. https://doi.org/10.1109/SISPAD.2015.7292254 | |
| 1587. | Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), S. 21 - 24. https://doi.org/10.1109/ULIS.2015.7063763 | |
| 1586. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: "A Novel Method of SOT-MRAM Switching"; Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015). | |
| 1585. | Kefayati, A., Pourfath, M., Kosina, H.: "A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS2"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 7 - 8. | |
| 1584. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "A Universal Nonvolatile Processing Environment"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), S. 62. | |
| 1583. | Grasser, T. (2015). Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation. D2T Symposium, Tokyo, Japan, Non-EU. (reposiTUm) | |
| 1582. | Wang, L., Sadi, T., Nedjalkov, M., Brown, A., Alexander, C., Cheng, B., Millar, C., Asenov, A.: "An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device"; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", IEEE, 2015, ISBN: 978-0-692-51523-5. https://doi.org/10.1109/IWCE.2015.7301989 | |
| 1581. | Wang, L., Sadi, T., Nedjalkov, M., Brown, A., Alexander, C., Cheng, B., Millar, C., Asenov, A.: "An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 155 - 156. | |
| 1580. | Rovitto, M., Zisser, W. H., Ceric, H.: "Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015). | |
| 1579. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: "Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Vortrag: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3; S. 650 - 651. | |
| 1578. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: "CMOS-Compatible Spintronic Devices"; Vortrag: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil (eingeladen); 01.09.2015 - 04.09.2015; in: "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9; 4 S. https://doi.org/10.1109/SBMicro.2015.7298103 | |
| 1577. | Neophytou, N., Thesberg, M., Pourfath, M., Kosina, H.: "Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations"; Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015). | |
| 1576. | Rzepa, G., Gös, W., Kaczer, B., Grasser, T.: "Characterization and Modeling of Reliability Issues in Nanoscale Devices"; Vortrag: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal (eingeladen); 24.05.2015 - 27.05.2015; in: "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9; S. 2445 - 2448. | |
| 1575. | Illarionov, Yu., Vexler, M., Fedorov, V. V., Suturin, S. M., Sokolov, N. S., Grasser, T.: "Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics"; Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3; S. 330 - 331. | |
| 1574. | Ullmann, B., Waltl, M., Grasser, T.: "Characterization of the Permanent Component of MOSFET Degradation Mechanisms"; Vortrag: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in: "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7; S. 36 - 37. | |
| 1573. | Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T.: "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1; S. 41 - 45. https://doi.org/10.1109/IIRW.2015.7437064 | |
| 1572. | Ceric, H., Selberherr, S.: "Compact Model for Solder Bump Electromigration Failure"; Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 18.05.2015 - 21.05.2015; in: "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5; S. 159 - 161. https://doi.org/10.1109/IITC-MAM.2015.7325651 | |
| 1571. | Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in: "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), S. 60. | |
| 1570. | Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method"; Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015). | |
| 1569. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: "Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2015), ISBN: 978-4-86348-514-3; S. 140 - 141. | |
| 1568. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), ISBN: 978-1-4799-6910-4; S. 285 - 288. https://doi.org/10.1109/ULIS.2015.7063829 | |
| 1567. | Papaleo, S., Zisser, W. H., Ceric, H.: "Effects of the Initial Stress at the Bottom of Open TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015). | |
| 1566. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: "Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer"; Vortrag: Iberchip Workshop (IWS), Montevideo, Uruguay (eingeladen); 24.02.2015 - 27.02.2015; in: "Proceedings of 21st Iberchip Worshop", 23 (2015). | |
| 1565. | Baumgartner, O., Filipovic, L., Kosina, H., Karner, M., Stanojevic, Z., Cheng-Karner, H. W.: "Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 202 - 205. https://doi.org/10.1109/SISPAD.2015.7292294 | |
| 1564. | Selinger, A., Ojdanic, D., Rupp, K., Langer, E.: "Eigenvalue Computations on Graphics Processing Units"; Vortrag: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in: "Proceedings of the 2015 Vienna Young Scientist Symposium", Book-of-Abstracts.com, Heinz A. Krebs, Gumpoldskirchen, Austria (2015), ISBN: 978-3-9504017-0-7; S. 40 - 41. | |
| 1563. | Rovitto, M., Zisser, W. H., Ceric, H., Grasser, T.: "Electromigration Modelling of Void Nucleation in Open Cu-TSVs"; Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 19.04.2015 - 22.04.2015; in: "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", IEEE Xplore, (2015), ISBN: 978-1-4799-9949-1; 5 S. https://doi.org/10.1109/EuroSimE.2015.7103100 | |
| 1562. | Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S.: "Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films"; Vortrag: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada (eingeladen); 20.05.2015 - 22.05.2015; in: "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", Google Books, (2015), ISBN: 978-1-927500-70-5; S. 58. | |
| 1561. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization"; Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 31.08.2015 - 01.09.2015; in: "Proceedings of the nanoHUB User Conference", (2015), S. 1. | |
| 1560. | Demel, H., Stanojevic, Z., Karner, M., Rzepa, G., Grasser, T.: "Expanding TCAD Simulations from Grid to Cloud"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 186 - 189. https://doi.org/10.1109/SISPAD.2015.7292290 | |
| 1559. | Gerrer, L., Hussin, R., Amoroso, S., Franco, J., Weckx, P., Simicic, N., Horiguchi, N., Kaczer, B., Grasser, T., Asenov, A.: "Experimental Evidences and Simulations of Trap Generation along a Percolation Path"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 226 - 229. https://doi.org/10.1109/ESSDERC.2015.7324755 | |
| 1558. | Papaleo, S., Zisser, W. H., Ceric, H.: "Factors that Influence Delamination at the Bottom of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 421 - 424. https://doi.org/10.1109/SISPAD.2015.7292350 | |
| 1557. | Grasser, T., Waltl, M., Wimmer, Y., Gös, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A.-M., Shluger, A., Kaczer, B.: "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 07.12.2015 - 09.12.2015; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), S. 535 - 538. https://doi.org/10.1109/IEDM.2015.7409739 | |
| 1556. | Roger, F., Singulani, A. P., Carniello, S., Filipovic, L., Selberherr, S.: "Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation"; Vortrag: International Workshop on CMOS Variability (VARI), Salvador, Brazil; 01.09.2015 - 04.09.2015; in: "Proceedings of the 6th International Workshop on CMOS Variability (VARI)", (2015), ISBN: 978-1-5090-0071-5; S. 39 - 44. https://doi.org/10.1109/VARI.2015.7456561 | |
| 1555. | Karner, M., Stanojevic, Z., Kernstock, Ch., Baumgartner, O., Cheng-Karner, H. W.: "Hierarchical TCAD Device Simulation of FinFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 258 - 261. https://doi.org/10.1109/SISPAD.2015.7292308 | |
| 1554. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T.: "Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. XT.2.1 - XT.2.6. https://doi.org/10.1109/IRPS.2015.7112834 | |
| 1553. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: "Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors"; Vortrag: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", Ieee Xplore, (2015), ISBN: 978-1-4799-6910-4; S. 81 - 84. https://doi.org/10.1109/ULIS.2015.7063778 | |
| 1552. | Ceric, H., Rovitto, M.: "Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 194 - 197. https://doi.org/10.1109/SISPAD.2015.7292292 | |
| 1551. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 24 - 27. https://doi.org/10.1109/SISPAD.2015.7292249 | |
| 1550. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 93 - 94. | |
| 1549. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 446 - 449. https://doi.org/10.1109/SISPAD.2015.7292357 | |
| 1548. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film"; Vortrag: European Materials Research Society (EMRS), Warsaw, Poland; 15.09.2015 - 18.09.2015; in: "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 S. | |
| 1547. | Ghosh, J., Sverdlov, V., Selberherr, S.: "Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in: "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), S. 130. | |
| 1546. | Ghosh, J., Sverdlov, V., Selberherr, S.: "Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5; 4 S. https://doi.org/10.1109/IWCE.2015.7301961 | |
| 1545. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 277 - 280. https://doi.org/10.1109/SISPAD.2015.7292313 | |
| 1544. | Illarionov, Yu., Waltl, M., Smith, S., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: "Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 172 - 175. https://doi.org/10.1109/ESSDERC.2015.7324741 | |
| 1543. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures"; Vortrag: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 29.06.2015 - 02.07.2015; in: "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2; S. 235 - 236. | |
| 1542. | Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., Selberherr, S.: "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in: "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), S. 71. | |
| 1541. | Filipovic, L., Selberherr, S.: "Kinetics of Droplet Motion During Spray Pyrolysis"; Vortrag: Energy-Materials-Nanotechnology Meeting on Droplets (EMN), Phuket, Thailand (eingeladen); 08.05.2015 - 11.05.2015; in: "Abstracts of the Energy-Materials-Nanotechnology Meeting on Droplets (EMN)", (2015), S. 127 - 128. | |
| 1540. | Kernstock, Ch., Stanojevic, Z., Baumgartner, O., Karner, M.: "Layout-Based TCAD Device Model Generation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 198 - 201. https://doi.org/10.1109/SISPAD.2015.7292293 | |
| 1539. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "Memory-efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5; 4 S. https://doi.org/10.1109/IWCE.2015.7301955 | |
| 1538. | Rudolf, F., Weinbub, J., Rupp, K., Resutik, P., Selberherr, S.: "Mesh Healing for TCAD Simulations"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 66. | |
| 1537. | Rzepa, G., Waltl, M., Gös, W., Kaczer, B., Grasser, T.: "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4; S. 144 - 147. https://doi.org/10.1109/SISPAD.2015.7292279 | |
| 1536. | Sharma, P., Jech, M., Tyaginov, S. E., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.M., Grasser, T.: "Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; S. 60 - 63. https://doi.org/10.1109/SISPAD.2015.7292258 | |
| 1535. | Franco, J., Kaczer, B., Roussel, P., Bury, E., Mertens, H., Ritzenthaler, R., Grasser, T., Horiguchi, N., Thean, A., Groeseneken, G.: "NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. 2F.4.1 - 2F.4.5. https://doi.org/10.1109/IRPS.2015.7112694 | |
| 1534. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Novel Buffered Magnetic Logic Gate Grid"; Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1533. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing"; Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Las Vegas, USA (eingeladen); 16.11.2015 - 19.11.2015; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2015), S. 15 - 16. | |
| 1532. | Rupp, K., Balay, S., Brown, J., Knepley, M., McInnes, L., Smith, B.: "On The Evolution Of User Support Topics in Computational Science and Engineering Software"; Poster: Computational Science & Engineering Software Sustainability and Productivity Challenges (CSESSP Challenges), Rockville, MD, USA; 15.10.2015 - 16.10.2015; in: "Computational Science and Engineering Software Sustainability and Productivity Challenges (CSESSP) Workshop", (2015), S. 1 - 2. | |
| 1531. | Stradiotto, R., Pobegen, G., Ostermaier, C., Grasser, T.: "On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4; S. 218 - 225. https://doi.org/10.1109/ESSDERC.2015.7324754 | |
| 1530. | Tyaginov, S. E., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T.: "On the Temperature Behavior of Hot-Carrier Degradation"; Vortrag: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), S. 143 - 146. https://doi.org/10.1109/IIRW.2015.7437088 | |
| 1529. | Wimmer, Y., Gös, W., El-Sayed, A.-M., Shluger, A., Grasser, T.: "On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 97 - 98. | |
| 1528. | Grasser, T., Waltl, M., Gös, W., Wimmer, Y., El-Sayed, A., Shluger, A., Kaczer, B.: "On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", IEEE, (2015), S. 5A.3.1 - 5A.3.8. https://doi.org/10.1109/IRPS.2015.7112739 | |
| 1527. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: "Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations"; Vortrag: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 28.06.2015 - 02.07.2015; in: "Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1 S. | |
| 1526. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: "Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study"; Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015). | |
| 1525. | Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P., Tyaginov, S. E., Bina, M., Wimmer, Y., Procel, L. M., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A.: "Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 S. https://doi.org/10.1109/IRPS.2015.7112706 | |
| 1524. | Grasser, T. (2015). Oxide Defects in MOS Transistors: Characterization and Modeling. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 1523. | Weinbub, J., Ellinghaus, P., Selberherr, S.: "Parallelization of the Two-Dimensional Wigner Monte Carlo Method"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 73. | |
| 1522. | Cervenka, J., Ellinghaus, P.: "Preconditioned Deterministic Solver for the Wigner Equation"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 31. | |
| 1521. | Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices"; Vortrag: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 10.05.2015 - 14.05.2015; in: "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4; S. 389 - 392. https://doi.org/10.1109/ISPSD.2015.7123471 | |
| 1520. | Filipovic, L., Selberherr, S.: "Processing of Integrated Gas Sensor Devices"; Vortrag: IEEE International Technical Conference of IEEE Region 10 (TENCON), Macau, China (eingeladen); 01.11.2015 - 04.11.2015; in: "Proceedings of the IEEE International Technical Conference of IEEE Region 10 (TENCON)", (2015), ISBN: 978-1-4799-8639-2; 6 S. https://doi.org/10.1109/TENCON.2015.7372781 | |
| 1519. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; in: "Proceedings of the Non-Volatile Memory Technology Symposium (NVMTS)", IEEE, 2015, S. 50 - 53. https://doi.org/10.1109/NVMTS.2015.7457479 | |
| 1518. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 12.10.2015 - 14.10.2015; in: "Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), S. 105 - 106. | |
| 1517. | Rupp, K.: "Scaling Deterministic Solution of the Boltzmann Transport Equation on Heterogeneous Computing Platforms"; Vortrag: Scalable Methods for Kinetic Equations, Oak Ridge, TN, USA (eingeladen); 19.10.2015 - 23.10.2015; in: "Scalable Methods for Kinetic Equations - Presentation Titles and Abstracts", (2015), S. 17. | |
| 1516. | Weinbub, J., Dang, F., Gillberg, T., Selberherr, S.: "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method"; in: "Proceedings of the High Performance Computing Symposium (HPC)", ACM, 2015, ISBN: 978-1-5108-0101-1, S. 217 - 224. https://doi.org/10.5555/2872599.2872626 | |
| 1515. | Weinbub, J., Dang, F., Gillberg, T., Selberherr, S.: "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method"; Vortrag: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 12.04.2015 - 15.04.2015; in: "Book of Abstracts of the Spring Simulation Multiconference (SpringSim), High Performance Computing Symposium (HPC)", (2015), ISBN: 1-56555-355-1; S. 74. | |
| 1514. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: "Silicon Spintronics"; Hauptvortrag: NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain (eingeladen); 13.04.2015 - 16.04.2015; in: "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9; S. 44 - 45. | |
| 1513. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: "Silicon Spintronics: Recent Advances and Challenges"; Hauptvortrag: International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia (eingeladen); 29.06.2015 - 30.06.2015; in: "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4; S. 6 - 7. | |
| 1512. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: "Silicon and CMOS-Compatible Spintronics"; Vortrag: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria (eingeladen); 15.03.2015 - 17.03.2015; in: "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", Recent advances in Computer Engineering, 28 (2015), ISBN: 978-1-61804-286-6; S. 17 - 20. | |
| 1511. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films"; Vortrag: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in: "Bulletin of the American Physical Society (APS March Meeting)", 60/1 (2015). | |
| 1510. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; S. 35 - 36. | |
| 1509. | Osintsev, D., Ghosh, J., Sverdlov, V., Weinbub, J., Selberherr, S.: "Spin Lifetime in MOSFETs: A High Performance Computing Approach"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 60 - 61. | |
| 1508. | Sverdlov, V., Selberherr, S.: "Spin-Based CMOS-Compatible Devices"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria (eingeladen); 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 69. | |
| 1507. | Sverdlov, V., Selberherr, S.: "Spin-Based Devices for Future Microelectronics"; Vortrag: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan (eingeladen); 04.05.2015 - 06.05.2015; in: "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 S. https://doi.org/10.1109/ISNE.2015.7132030 | |
| 1506. | Sverdlov, V., Selberherr, S.: "Spin-Based Silicon and CMOS-Compatible Devices"; Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA (eingeladen); 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1505. | Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S.: "Spin-Driven Applications of Silicon and CMOS-Compatible Devices"; Vortrag: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China (eingeladen); 24.09.2015 - 26.09.2015; in: "Abstracts of the BIT's 5th Annual Congress of Nano Science & Technology-2015", (2015), S. 175. | |
| 1504. | Sverdlov, V., Selberherr, S.: "Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in: "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), S. 114. | |
| 1503. | Sverdlov, V., Selberherr, S.: "Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures"; Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015). | |
| 1502. | Hosseini, M., Elahi, M., Pourfath, M., Esseni, D.: "Strain Engineering of Single-Layer MoS2"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9; S. 314 - 317. https://doi.org/10.1109/ESSDERC.2015.7324777 | |
| 1501. | Sverdlov, V., Osintsev, D., Ghosh, J., Selberherr, S.: "Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), S. 63. | |
| 1500. | Filipovic, L., Selberherr, S.: "Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors"; Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1499. | Filipovic, L., Selberherr, S.: "Stress in Three-Dimensionally Integrated Sensor Systems"; Vortrag: International Conference on Materials for Advanced Technologies(ICMAT), Singapore (eingeladen); 28.06.2015 - 03.07.2015; in: "Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT)", (2015), S. 342. | |
| 1498. | Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S.: "Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality"; Vortrag: International Meshing Roundtable (IMR), Austin, Texas, USA; 11.10.2015 - 14.10.2015; in: "Proceedings of the 24th International Meshing Roundtable (IMR24)", (2015), 5 S. | |
| 1497. | Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: "Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors"; Vortrag: Graphene 2015, Bilbao, Spain; 10.03.2015 - 13.03.2015; in: "Abstracts Graphene 2015", (2015), 1 S. | |
| 1496. | Nedjalkov, M., Ellinghaus, P., Selberherr, S.: "The Aharanov-Bohm Effect from a Phase Space Perspective"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 59 - 60. | |
| 1495. | Kaczer, B., Franco, J., Weckx, P., Roussel, P., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Kukner, H., Raghavan, P., Catthoor, F., Rzepa, G., Gös, W., Grasser, T.: "The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Graz, Austria (eingeladen); 14.09.2015 - 18.09.2015; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4; S. 218 - 225. https://doi.org/10.1109/ESSDERC.2015.7324754 | |
| 1494. | Selberherr, S. (2015). The Evolution and Potential Future of Microelectronics. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 1493. | Selberherr, S. (2015). The Evolution and Potential Future of Microelectronics. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 1492. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "The Influence of Electrostatic Lenses on Wave Packet Dynamics"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 39 - 40. | |
| 1491. | Nazemi, S., Soleimani, E., Pourfath, M., Kosina, H.: "The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8; S. 333 - 336. | |
| 1490. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: "Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), S. 70. | |
| 1489. | Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: "Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0; 4 S. | |
| 1488. | Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films"; Vortrag: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in: "Proceedings of the 227th ECS Meeting (ECS)", ECS Transactions, 67 (2015), ISSN: 1938-6737; 2 S. | |
| 1487. | Rupp, K., Tillet, Ph., St Clere Smithe, T., Karovic, N., Weinbub, J., Rudolf, F.: "ViennaCL - Fast Linear Algebra for Multi and Many-Core Architectures"; Poster: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015. | |
| 1486. | Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S.: "ViennaWD - Applications"; Vortrag: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015; in: "Booklet of the International Wigner Workshop (IW2)", (2015), S. 9. | |
| 1485. | Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "ViennaWD - Status and Outlook"; Vortrag: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015; in: "Booklet of the International Wigner Workshop (IW2)", (2015), S. 8. | |
| 1484. | Wang, L., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: "3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 269 - 272. https://doi.org/10.1109/SISPAD.2014.6931615 | |
| 1483. | Filipovic, L., Stanojevic, Z., Baumgartner, O., Kosina, H.: "3D Modeling of Direct Band-to-Band Tunneling in Nanowire TFETs"; Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1482. | Ceric, H., Orio, R., Singulani, A. P., Selberherr, S.: "3D Technology Interconnect Reliability TCAD"; Vortrag: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 11.02.2014 - 13.02.2014; in: "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6; S. 1 - 8. | |
| 1481. | Weinbub, J., Rupp, K., Rudolf, F.: "A Flexible Material Database for Computational Science and Engineering"; Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 226. | |
| 1480. | Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H.: "A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors"; Vortrag: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 01.09.2014 - 04.09.2014; in: "Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), S. 1 - 2. | |
| 1479. | Tyaginov, S. E., Bina, M., Franco, J., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T.: "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 89 - 92. https://doi.org/10.1109/SISPAD.2014.6931570 | |
| 1478. | Illarionov, Yu., Bina, M., Tyaginov, S. E., Rott, K., Reisinger, H., Kaczer, B., Grasser, T.: "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT13.1 - XT13.6. | |
| 1477. | Waltl, M., Gös, W., Rott, K., Reisinger, H., Grasser, T.: "A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case"; Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT18.1 - XT18.5. | |
| 1476. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Franco, J., Kaczer, B.: "A unified perspective of RTN and BTI"; Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 4A.5.1 - 4A.5.7. | |
| 1475. | Filipovic, L., Selberherr, S.: "About Processes and Performance of Integrated Gas Sensor Components"; Vortrag: Energy-Materials-Nanotechnology Fall Meeting (EMN), Orlando, USA (eingeladen); 22.11.2014 - 25.11.2014; in: "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2014), S. 96 - 97. | |
| 1474. | Rupp, K., Tillet, Ph., Jungel, A., Grasser, T.: "Achieving Portable High Performance for Iterative Solvers on Accelerators"; Vortrag: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 10.03.2014 - 14.03.2014; in: "Book of Abstracts", (2014), S. 815. | |
| 1473. | Gös, W., Waltl, M., Wimmer, Y., Rzepa, G., Grasser, T.: "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan (eingeladen); 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 77 - 80. https://doi.org/10.1109/SISPAD.2014.6931567 | |
| 1472. | Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H.: "Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels"; Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 1. | |
| 1471. | Moradinasab, M., Pourfath, M., Kosina, H.: "An Instability Study in Terahertz Quantum Cascade Lasers"; Vortrag: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 03.08.2014 - 08.08.2014; in: "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), S. 10. | |
| 1470. | Rupp, K., Rudolf, F., Weinbub, J., Jungel, A., Grasser, T.: "Automatic Finite Volume Discretizations Through Symbolic Computations"; Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 192. | |
| 1469. | Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H.: "BTB Tunneling in InAs/Si Heterojunctions"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 245 - 248. https://doi.org/10.1109/SISPAD.2014.6931609 | |
| 1468. | Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H.: "Band-to-Band Tunneling in 3D Devices"; Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 13 - 14. | |
| 1467. | Illarionov, Yu., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T.: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge"; Vortrag: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in: "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7; S. 29 - 30. | |
| 1466. | Rupp, K., Bina, M., Wimmer, Y., Jungel, A., Grasser, T.: "Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 365 - 368. https://doi.org/10.1109/SISPAD.2014.6931639 | |
| 1465. | Grasser, T., Rzepa, G., Waltl, M., Gös, W., Rott, K., Rott, G.A., Reisinger, H., Franco, J., Kaczer, B.: "Characterization and Modeling of Charge Trapping: From Single Defects to Devices"; Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA (eingeladen); 28.05.2014 - 30.05.2014; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9; S. 1 - 4. https://doi.org/10.1109/ICICDT.2014.6838620 | |
| 1464. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design"; Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 19.06.2014 - 21.06.2014; in: "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), S. 26. | |
| 1463. | Makarov, A., Sverdlov, V., Selberherr, S.: "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators"; in: "Future Information Engineering", G. Lee (Hrg.); WITPRESS, 1, 2014, ISBN: 978-1-84564-855-8, S. 391 - 398. https://doi.org/10.2495/ICIE130451 | |
| 1462. | Stanojevic, Z., Baumgartner, O., Filipovic, L., Kosina, H.: "Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels"; Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1461. | Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., Orio, R., Selberherr, S.: "Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs"; Vortrag: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 02.03.2014 - 05.03.2014; in: "Book of Abstracts", (2014), 2 S. | |
| 1460. | Cervenka, J., Ellinghaus, P., Nedjalkov, M.: "Deterministic Solution of the Discrete Wigner Equation"; Vortrag: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in: "Eighth International Conference on Numerical Methods and Applications", (2014), S. 36. | |
| 1459. | Tyaginov, S. E., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.M., Kaczer, B., Ceric, H., Grasser, T.: "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8; S. 63 - 68. https://doi.org/10.1109/IIRW.2014.7049512 | |
| 1458. | Filipovic, L., Orio, R., Selberherr, S., Singulani, A. P., Roger, F., Minixhofer, R.: "Effects of Sidewall Scallops on Open Tungsten TSVs"; Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 3E.3.1 - 3E.3.6. https://doi.org/10.1109/IRPS.2014.6860633 | |
| 1457. | Filipovic, L., Orio, R., Selberherr, S.: "Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 321 - 326. https://doi.org/10.1109/IPFA.2014.6898137 | |
| 1456. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "Efficient Calculation of the Two-Dimensional Wigner Potential"; Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 19 - 20. | |
| 1455. | Ceric, H., Selberherr, S.: "Electromigration Induced Failure of Solder Bumps and the Role of IMC"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 20.05.2014 - 23.05.2014; in: "Proceedings of the International Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1; S. 265 - 267. https://doi.org/10.1109/IITC.2014.6831891 | |
| 1454. | Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S.: "Electromigration Induced Resistance Increase in Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 249 - 252. https://doi.org/10.1109/SISPAD.2014.6931610 | |
| 1453. | Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S.: "Electromigration Reliability of Open TSV Structures"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 48. | |
| 1452. | Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S.: "Electromigration Reliability of Open TSV Structures"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 317 - 320. https://doi.org/10.1109/IPFA.2014.6898179 | |
| 1451. | Ceric, H., Selberherr, S.: "Electromigration Reliability of Solder Bumps"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; S. 336 - 339. https://doi.org/10.1109/IPFA.2014.6898145 | |
| 1450. | Ceric, H., Zisser, W. H., Rovitto, M., Selberherr, S.: "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 221 - 224. https://doi.org/10.1109/SISPAD.2014.6931603 | |
| 1449. | Sverdlov, V., Osintsev, D., Selberherr, S.: "Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach"; Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 454 - 456. | |
| 1448. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Gös, W.: "Evidence for Defect Pairs in SiON pMOSFETs"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9; S. 228 - 263. | |
| 1447. | Stanojevic, Z., Filipovic, L., Baumgartner, O., Kosina, H.: "Fast Methods for Full-Band Mobility Calculation"; Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 51 - 52. | |
| 1446. | Neophytou, N., Kosina, H.: "Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach"; Vortrag: International Conference on Thermoelectrics, Nashville, USA; 06.07.2014 - 10.07.2014; in: "Book of Abstracts", (2014), 1 S. | |
| 1445. | Windbacher, T., Osintsev, D., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator"; Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 193 - 194. | |
| 1444. | Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H.: "Full-Band Modeling of Mobility in p-Type FinFETs"; Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in: "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5676-0; S. 83 - 84. | |
| 1443. | Neophytou, N., Karamitaheri, H., Kosina, H.: "Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers"; Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 1. | |
| 1442. | Stanojevic, Z., Filipovic, L., Baumgartner, O., Karner, M., Kernstock, C., Kosina, H.: "Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 4 S. | |
| 1441. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "High Performance MRAM-Based Stateful Logic"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 117 - 120. https://doi.org/10.1109/ULIS.2014.6813912 | |
| 1440. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "Implications of the Coherence Length on the Discrete Wigner Potential"; Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 155 - 156. | |
| 1439. | Moradinasab, M., Pourfath, M., Kosina, H.: "Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers"; Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 07.09.2014 - 12.09.2014; in: "International Quantum Cascade Lasers School & Workshop 2014", (2014), S. 182 - 183. | |
| 1438. | Osintsev, D., Sverdlov, V., Windbacher, T., Selberherr, S.: "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 193 - 196. https://doi.org/10.1109/SISPAD.2014.6931596 | |
| 1437. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films"; Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1436. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 297 - 300. https://doi.org/10.1109/SISPAD.2014.6931622 | |
| 1435. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop"; Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 9 - 12. https://doi.org/10.1109/ULIS.2014.6813893 | |
| 1434. | Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M.: "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 117 - 120. https://doi.org/10.1109/SISPAD.2014.6931577 | |
| 1433. | Sverdlov, V., Mahmoudi, H., Makarov, A., Windbacher, T., Selberherr, S.: "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications"; Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland (eingeladen); 19.06.2014 - 21.06.2014; in: "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), S. 17. | |
| 1432. | Schrems, M., Siegert, J., Dorfi, P., Kraft, J., Stueckler, E., Schrank, F., Selberherr, S.: "Manufacturing of 3D Integrated Sensors and Circuits"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Venice, Italy (eingeladen); 22.09.2014 - 26.09.2014; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2014), ISBN: 978-1-4799-4377-7; S. 162 - 165. https://doi.org/10.1109/ESSDERC.2014.6948785 | |
| 1431. | Kaczer, B., Chen, C., Weckx, P., Roussel, Ph. J., Toledano-Luque, M., Cho, M., Watt, J., Chanda, K., Groeseneken, G., Grasser, T.: "Maximizing reliable performance of advanced CMOS circuits-A case study"; Vortrag: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. 2D.4.1 - 2D.4.6. | |
| 1430. | Rudolf, F., Wimmer, Y., Weinbub, J., Rupp, K., Selberherr, S.: "Mesh Generation Using Dynamic Sizing Functions"; Vortrag: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in: "Proc. 4th European Seminar on Computing", (2014), S. 191. | |
| 1429. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: "Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer"; Vortrag: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in: "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8; S. 166. | |
| 1428. | Rott, G.A., Rott, K., Reisinger, H., Gustin, W., Grasser, T.: "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 40. | |
| 1427. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain"; Vortrag: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in: "Bulletin of the American Physical Society (APS March Meeting)", 59/1 (2014), 1 S. | |
| 1426. | Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S.: "Modeling Silicon Spintronics"; Vortrag: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia (eingeladen); 23.09.2014 - 25.09.2014; in: "Abstracts 2014", (2014), S. 78. | |
| 1425. | Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S.: "Modeling Spin-Based Electronic Devices"; Hauptvortrag: International Conference on Microelectronics (MIEL), Belgrade, Serbia (eingeladen); 12.05.2014 - 14.05.2014; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2014), ISBN: 978-1-4799-5295-3; S. 27 - 34. https://doi.org/10.1109/MIEL.2014.6842081 | |
| 1424. | Makarov, A., Osintsev, D., Sverdlov, V., Selberherr, S.: "Modeling Spin-Based Electronic Devices"; Vortrag: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA (eingeladen); 10.03.2014 - 14.03.2014; in: "Book of Abstracts", (2014), 1 S. | |
| 1423. | Selberherr, S. (2014). Modeling Spin-Based Electronic Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm) | |
| 1422. | Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S.: "Modeling of Spin-Based Silicon Technology"; Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden (eingeladen); 07.04.2014 - 09.04.2014; in: "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9; S. 1 - 4. https://doi.org/10.1109/ULIS.2014.6813891 | |
| 1421. | Giering, K., Sohrmann, C., Rzepa, G., Heiß, L., Grasser, T., Jancke, R.: "NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; S. 29 - 34. https://doi.org/10.1109/IIRW.2014.7049501 | |
| 1420. | Dimov, I., Nedjalkov, M., Sellier, J. M., Selberherr, S.: "Neumann Series Analysis of the Wigner Equation Solution"; Vortrag: European Conference on Mathematics for Industry (ECMI), Taormina, Italy (eingeladen); 09.06.2014 - 14.06.2014; in: "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), S. 459. | |
| 1419. | Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: "New Design of Spin-Torque Nano-Oscillators"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 30.11.2014 - 05.12.2014; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1; S. 63. | |
| 1418. | Tyaginov, S. E., Bina, M., Franco, J., Kaczer, B., Grasser, T.: "On the Importance of Electron-electron Scattering for Hot-carrier Degradation"; Vortrag: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 08.09.2014 - 11.09.2014; in: "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), S. 858 - 859. | |
| 1417. | Orio, R., Gousseau, S., Moreau, S., Ceric, H., Selberherr, S., Farcy, A., Bay, F., Inal, K., Montmitonnet, P.: "On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure"; Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6; S. 111 - 114. https://doi.org/10.1109/IIRW.2014.7049523 | |
| 1416. | Grasser, T., Gös, W., Wimmer, Y., Schanovsky, F., Rzepa, G., Waltl, M., Rott, K., Reisinger, H., Afanas´Ev, V., Stesmans, A., El-Sayed, A., Shluger, A.: "On the Microscopic Structure of Hole Traps in pMOSFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7; S. 530 - 533. https://doi.org/10.1109/IEDM.2014.7047093 | |
| 1415. | Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H.: "On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 181 - 184. https://doi.org/10.1109/SISPAD.2014.6931593 | |
| 1414. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method"; Vortrag: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in: "Eighth International Conference on Numerical Methods and Applications", (2014), S. 19. | |
| 1413. | Rupp, K., Tillet, Ph., Rudolf, F., Weinbub, J., Grasser, T., Jüngel, A.: "Performance Portability Study of Linear Algebra Kernels in OpenCL"; Vortrag: International Workshop on OpenCL (IWOCL), Bristol, UK; 12.05.2014 - 13.05.2014; in: "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7; 11 S. https://doi.org/10.1145/2664666.2664674 | |
| 1412. | Tyaginov, S. E., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T.: "Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; S. XT16.1 - XT16.8. | |
| 1411. | Wimmer, Y., Tyaginov, S. E., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J.M., Minixhofer, R., Ceric, H., Grasser, T.: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; S. 58 - 62. https://doi.org/10.1109/IIRW.2014.7049511 | |
| 1410. | Rzepa, G., Gös, W., Rott, G.A., Rott, K., Karner, M., Kernstock, C., Kaczer, B., Reisinger, H., Grasser, T.: "Physical Modeling of NBTI: From Individual Defects to Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 81 - 84. https://doi.org/10.1109/SISPAD.2014.6931568 | |
| 1409. | Filipovic, L., Orio, R., Selberherr, S.: "Process and Performance of Copper TSVs"; Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), S. 1 - 2. | |
| 1408. | Filipovic, L., Orio, R., Selberherr, S.: "Process and Reliability of SF6/O2 Plasma Etched Copper TSVs"; Vortrag: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 07.04.2014 - 09.04.2014; in: "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1; 4 S. https://doi.org/10.1109/EuroSimE.2014.6813768 | |
| 1407. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 30.11.2014 - 05.12.2014; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1; S. 62. | |
| 1406. | Ceric, H., Zisser, W. H., Selberherr, S.: "Quantum Mechanical Calculations of Electromigration Characteristics"; Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA (eingeladen); 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 21. | |
| 1405. | Franco, J., Kaczer, B., Waldron, N., Roussel, Ph. J., Alian, A., Pourghaderi, M., Ji, Z., Grasser, T., Kauerauf, T., Sioncke, S., Collaert, N., Thean, A., Groeseneken, G.: "RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7; S. 506 - 509. https://doi.org/10.1109/IEDM.2014.7047087 | |
| 1404. | Vexler, M., Illarionov, Yu., Tyaginov, S. E., Sokolov, N. S., Fedorov, V. V., Grasser, T.: "Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT"; Vortrag: DIELECTRICS-2014, St-Petersburg, Russia; 02.06.2014 - 06.06.2014; in: "Materials of XIII International conference DIELECTRICS", (2014), S. 159 - 162. | |
| 1403. | Wang, Y., Baboulin, M., Rupp, K., Le Maitre, O.: "Solving 3D incompressible Navier-Stokes equations on hybrid CPU/GPU systems"; Vortrag: High Performance Computing Symposium (HPC), Tampa, Florida, USA; 13.04.2014 - 16.04.2014; in: "HPC '14 Proceedings of the High Performance Computing Symposium", ACM, (2014), S. 1 - 8. | |
| 1402. | Sverdlov, V., Osintsev, D., Selberherr, S.: "Spin Behaviour in Strained Silicon Films"; Vortrag: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland (eingeladen); 15.09.2014 - 18.09.2014; in: "Abstracts of E-MRS Fall Meeting", (2014), 1 S. | |
| 1401. | Ghosh, J., Sverdlov, V., Selberherr, S.: "Spin Diffusion in Silicon from a Ferromagnetic Contact"; Vortrag: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in: "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8; S. 165. | |
| 1400. | Ghosh, J., Sverdlov, V., Selberherr, S.: "Spin Injection in Silicon: The Role of Screening Effects"; Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 63 - 64. | |
| 1399. | Sverdlov, V., Osintsev, D., Selberherr, S. (2014). Spin Lifetime in Strained Silicon Films. In 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 (pp. 57–58), Singapore, Singapore. https://doi.org/10.1109/ISTDM.2014.6874695 (reposiTUm) | |
| 1398. | Touski, S., Chaghazardi, Z., Pourfath, M., Moradinasab, M., Faez, R., Kosina, H.: "Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation"; Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 101 - 102. | |
| 1397. | Filipovic, L., Selberherr, S.: "Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Guilin, China (eingeladen); 28.10.2014 - 31.10.2014; in: "Proc.Intl.Conf.on Solid-State and Integrated Circuit Technology (ICSICT)", (2014), ISBN: 978-1-4799-3282-5; S. 1692 - 1695. https://doi.org/10.1109/ICSICT.2014.7021507 | |
| 1396. | Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., Selberherr, S.: "Stress Analysis in Open TSVs after Nanoindentation"; Vortrag: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in: "Abstracts", (2014), S. 39 - 40. | |
| 1395. | Filipovic, L., Selberherr, S.: "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology"; Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 46. | |
| 1394. | Zisser, W. H., Ceric, H., Selberherr, S.: "Stress Development and Void Evolution in Open TSVs"; Vortrag: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in: "Abstracts", (2014), S. 38 - 39. | |
| 1393. | Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., Selberherr, S.: "Stress Evolution During the Nanoindentation in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 52. | |
| 1392. | Sverdlov, V., Makarov, A., Selberherr, S.: "Structural Optimization of MTJs for STT-MRAM and Oscillator Applications"; Vortrag: Symposium on CMOS Emerging Technologies, Grenoble, France; 06.07.2014 - 08.07.2014; in: "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3; S. 19. | |
| 1391. | Bury, E., Degraeve, R., Cho, M., Kaczer, B., Gös, W., Grasser, T., Horiguchi, N., Groeseneken, G.: "Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Devices"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9; S. 254 - 257. | |
| 1390. | Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S.: "Template-Based Mesh Generation for Semiconductor Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 217 - 220. https://doi.org/10.1109/SISPAD.2014.6931602 | |
| 1389. | Filipovic, L., Selberherr, S.: "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in: "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), S. 36. | |
| 1388. | Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: "The Multi-Dimensional Transient Challenge: The Wigner Particle Approach"; Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France (eingeladen); 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 119 - 120. | |
| 1387. | Ellinghaus, P., Nedjalkov, M., Selberherr, S.: "The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 113 - 116. https://doi.org/10.1109/SISPAD.2014.6931576 | |
| 1386. | Neophytou, N., Kosina, H.: "Thermoelectric Properties of Gated Silicon Nanowires"; Vortrag: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in: "Bulletin of the American Physical Society (APS March Meeting)", (2014), 1 S. | |
| 1385. | Neophytou, N., Kosina, H.: "Thermoelectric properties of gated Si nanowires"; Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 197 - 198. | |
| 1384. | Filipovic, L., Rudolf, F., Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Singulani, A. P., Minixhofer, R., Selberherr, S.: "Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; S. 341 - 344. https://doi.org/10.1109/SISPAD.2014.6931633 | |
| 1383. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films"; Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 28.07.2014 - 31.07.2014; in: "Book of Abstracts", (2014), S. 1. | |
| 1382. | Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S.: "Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures"; Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 23.02.2014 - 28.02.2014; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), S. 88 - 89. | |
| 1381. | Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S.: "Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs"; Vortrag: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6; S. 59 - 60. | |
| 1380. | Zisser, W. H., Ceric, H., Selberherr, S.: "Void Evolution in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in: "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), S. 59. | |
| 1379. | Gös, W., Toledano-Luque, M., Baumgartner, O., Schanovsky, F., Kaczer, B., Grasser, T.: "A Comprehensive Model for Correlated Drain and Gate Current Fluctuations"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 46 - 47. | |
| 1378. | Schanovsky, F., Baumgartner, O., Gös, W., Grasser, T.: "A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 1 - 4. https://doi.org/10.1109/SISPAD.2013.6650559 | |
| 1377. | Rupp, K., Rudolf, F., Weinbub, J.: "A Discussion of Selected Vienna-Libraries for Computational Science"; Vortrag: C++Now, Aspen, CO, USA; 12.05.2013 - 17.05.2013; in: "Proceedings of C++Now (2013)", (2013), 10 S. | |
| 1376. | Rupp, K., Tillet, Ph., Smith, B., Grasser, T., Jungel, A.: "A Note on the GPU Acceleration of Eigenvalue Computations"; Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 21.09.2013 - 27.09.2013; in: "AIP Proceedings, volume 1558", (2013), S. 1536 - 1539. | |
| 1375. | Illarionov, Yu., Tyaginov, S. E., Bina, M., Grasser, T.: "A method to determine the lateral trap position in ultra-scaled MOSFETs"; Vortrag: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in: "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0; S. 728 - 729. | |
| 1374. | Orio, R., Selberherr, S.: "About Voids in Copper Interconnects"; Vortrag: International Conference on Materials for Advanced Technologies (ICMAT), Singapore (eingeladen); 30.06.2013 - 05.07.2013; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), S. 8. | |
| 1373. | Grasser, T., Rott, K., Reisinger, H., Wagner, P.-J., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B.: "Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6. | |
| 1372. | Schanovsky, F., Gös, W., Grasser, T.: "Advanced Modeling of Charge Trapping at Oxide Defects"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom (eingeladen); 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 451 - 458. https://doi.org/10.1109/SISPAD.2013.6650671 | |
| 1371. | Ceric, H., Orio, R., Selberherr, S.: "Analysis of Solder Bump Electromigration Reliability"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 713 - 716. https://doi.org/10.1109/IPFA.2013.6599258 | |
| 1370. | Makarov, A., Sverdlov, V., Selberherr, S.: "Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling"; Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 S. | |
| 1369. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; S. 69 - 70. | |
| 1368. | Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S.: "Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation"; Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 26.05.2013 - 29.05.2013; in: "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0; S. 135 - 136. | |
| 1367. | Makarov, A., Sverdlov, V., Selberherr, S.: "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators"; Vortrag: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 01.11.2013 - 02.11.2013; in: "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), S. 7. | |
| 1366. | Makarov, A., Sverdlov, V., Selberherr, S.: "Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs"; Vortrag: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in: "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0; S. 796 - 797. | |
| 1365. | Coppeta, R., Ceric, H., Holec, D., Grasser, T.: "Critical thickness for GaN thin film on AlN substrate"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 133 - 136. | |
| 1364. | Weckx, P., Kaczer, B., Toledano-Luque, M., Grasser, T., Roussel, Ph. J., Kukner, H., Raghavan, P., Catthoor, F., Groeseneken, G.: "Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 7. | |
| 1363. | Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Bina, M., Grasser, T., Cho, M., Weckx, P., Groeseneken, G.: "Degradation of time dependent variability due to interface state generation"; Vortrag: International Symposium on VLSI Technology, Kyoto, Japan; 11.06.2013 - 14.06.2013; in: "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0; S. 190 - 191. | |
| 1362. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "Design and Applications of Magnetic Tunnel Junction Based Logic Circuits"; Vortrag: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 24.06.2013 - 27.06.2013; in: "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4; S. 157 - 160. https://doi.org/10.1109/PRIME.2013.6603122 | |
| 1361. | Pobegen, G., Nelhiebel, M., Grasser, T.: "Detrimental impact of hydrogen passivation on NBTI and HC degradation"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6. | |
| 1360. | Baumgartner, O., Bina, M., Gös, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T.: "Direct Tunneling and Gate Current Fluctuations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 17 - 20. https://doi.org/10.1109/SISPAD.2013.6650563 | |
| 1359. | Rott, G.A., Nielen, H., Reisinger, H., Gustin, W., Tyaginov, S. E., Grasser, T.: "Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 73 - 77. | |
| 1358. | Singulani, A. P., Ceric, H., Langer, E., Carniello, S.: "Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), ISBN: 978-1-4799-0112-8; S. CP.2.1 - CP.2.5. https://doi.org/10.1109/IRPS.2013.6532066 | |
| 1357. | Zisser, W. H., Ceric, H., Orio, R., Selberherr, S.: "Electromigration Analyses of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 244 - 247. https://doi.org/10.1109/SISPAD.2013.6650620 | |
| 1356. | Ceric, H., Singulani, A. P., Orio, R., Selberherr, S.: "Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 166 - 169. https://doi.org/10.1109/IIRW.2013.6804185 | |
| 1355. | Zisser, W. H., Ceric, H., Orio, R., Selberherr, S.: "Electromigration Induced Stress in Open TSVs"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 142 - 145. https://doi.org/10.1109/IIRW.2013.6804179 | |
| 1354. | Touski, S., Pourfath, M., Kosina, H.: "Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 108 - 109. | |
| 1353. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films"; Vortrag: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in: "Bulletin American Physical Society (APS March Meeting)", (2013), 1 S. | |
| 1352. | Coppeta, R., Ceric, H., Karunamurthy, B., Grasser, T.: "Epitaxial Volmer-Weber Growth Modelling"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 45 - 48. https://doi.org/10.1109/SISPAD.2013.6650570 | |
| 1351. | Tyaginov, S. E., Bina, M., Franco, J., Osintsev, D., Wimmer, Y., Kaczer, B., Grasser, T.: "Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 98 - 101. | |
| 1350. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 236 - 239. https://doi.org/10.1109/SISPAD.2013.6650618 | |
| 1349. | Kaczer, B., Afanas´Ev, V., Rott, K., Cerbu, F., Franco, J., Gös, W., Grasser, T., Madia, O., Nguyen, D., Stesmans, A., Reisinger, H., Toledano-Luque, M., Weckx, P.: "Experimental characterization of BTI defects"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom (eingeladen); 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 444 - 450. https://doi.org/10.1109/SISPAD.2013.6650670 | |
| 1348. | Stanojevic, Z., Karner, M., Kosina, H.: "Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 332 - 335. https://doi.org/10.1109/IEDM.2013.6724618 | |
| 1347. | Makarov, A., Sverdlov, V., Selberherr, S.: "Fast Switching STT-MRAM Cells for Future Universal Memory"; Vortrag: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico (eingeladen); 17.12.2013 - 20.12.2013; in: "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 S. | |
| 1346. | Neophytou, N., Stanojevic, Z., Kosina, H.: "Full Band Calculations of Low-field Mobility in p-type Silicon Nanowire MOSFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 81 - 84. https://doi.org/10.1109/SISPAD.2013.6650579 | |
| 1345. | Grasser, T.: "Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial) (eingeladen); 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1. | |
| 1344. | Makarov, A., Sverdlov, V., Selberherr, S.: "Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer"; Vortrag: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in: "Proceedings of the International Conference on Nanoscale Magnetism", (2013), S. 69. | |
| 1343. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P.-J., Schanovsky, F., Gös, W., Pobegen, G., Kaczer, B.: "Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 409 - 412. https://doi.org/10.1109/IEDM.2013.6724637 | |
| 1342. | Singulani, A. P., Ceric, H., Filipovic, L., Langer, E.: "Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology"; Vortrag: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 14.04.2013 - 17.04.2013; in: "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8; 6 S. https://doi.org/10.1109/EuroSimE.2013.6529938 | |
| 1341. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates"; Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 68 - 69. | |
| 1340. | Ceric, H., Singulani, A. P., Orio, R., Selberherr, S.: "Impact of Intermetallic Compound on Solder Bump Electromigration Reliability"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 73 - 76. https://doi.org/10.1109/SISPAD.2013.6650577 | |
| 1339. | Weinbub, J., Rupp, K., Selberherr, S.: "Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX"; Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 S. | |
| 1338. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Influence of Surface Roughness Scattering on Spin Lifetime in Silicon"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 76 - 77. | |
| 1337. | Orio, R., Ceric, H., Selberherr, S.: "Influence of Temperature on the Standard Deviation of Electromigration Lifetimes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 232 - 235. https://doi.org/10.1109/SISPAD.2013.6650617 | |
| 1336. | Ghosh, J., Sverdlov, V., Selberherr, S.: "Influence of a Space Charge Region on Spin Transport in Semiconductor"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 11.12.2013 - 13.12.2013; in: "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3; S. 27. | |
| 1335. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 19.03.2013 - 21.03.2013; in: "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7; S. 221 - 224. https://doi.org/10.1109/ULIS.2013.6523525 | |
| 1334. | Neophytou, N., Karamitaheri, H., Kosina, H.: "Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches from Atomistic Calculations for Electrons and Phonons"; Vortrag: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in: "Book of Abstracts", (2013), 1 S. | |
| 1333. | Neophytou, N., Stanojevic, Z., Kosina, H.: "Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations"; Poster: International Conference on One Dimensional Nanomaterials (ICON), Annecy, France; 23.09.2013 - 26.09.2013; in: "Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials", (2013), S. 142. | |
| 1332. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications"; Vortrag: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in: "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8; Paper-Nr. 26-27, 2 S. https://doi.org/10.1109/NanoArch.2013.6623033 | |
| 1331. | Makarov, A., Sverdlov, V., Selberherr, S.: "Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 24.06.2013 - 28.06.2013; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; S. 338 - 339. | |
| 1330. | Schrems, M., Schrank, C., Siegert, J., Kraft, J., Teva, J., Selberherr, S.: "Metrology Requirements for Manufacturing 3D Integrated ICs"; Vortrag: International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Gaithersburg, USA (eingeladen); 25.03.2013 - 28.03.2013; in: "Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)", (2013), S. 137 - 139. | |
| 1329. | Filipovic, L., Baumgartner, O., Kosina, H.: "Modeling Direct Band-to-Band Tunneling using QTBM"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 212 - 215. https://doi.org/10.1109/SISPAD.2013.6650612 | |
| 1328. | Sverdlov, V., Mahmoudi, H., Makarov, A., Osintsev, D., Weinbub, J., Windbacher, T., Selberherr, S.: "Modeling Spin-Based Devices in Silicon"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan (eingeladen); 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 70 - 71. | |
| 1327. | Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F.: "Modeling Spray Pyrolysis Deposition"; Vortrag: World Congress on Engineering (WCE), London, UK; 03.07.2013 - 05.07.2013; in: "Proceedings of the World Congress on Engineering (WCE) Vol II", (2013), ISBN: 978-988-19252-8-2; S. 987 - 992. | |
| 1326. | Stanojevic, Z., Kosina, H.: "Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures"; Vortrag: Silicon Nanoelectronics Workshop, Kyoto, Japan; 09.06.2013 - 10.06.2013; in: "The 2013 Silicon Nanoelectronics Workshop (SNW)", (2013), S. 93 - 94. | |
| 1325. | Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S.: "Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures"; Vortrag: International Conference on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 02.06.2013 - 05.06.2013; in: "Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies", (2013), ISBN: 978-80-554-0689-3; S. 48 - 51. | |
| 1324. | Baumgartner, O., Stanojevic, Z., Kosina, H.: "Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 86 - 87. | |
| 1323. | Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W.: "Modeling the Growth of Thin SnO2 Films using Spray Pyrolysis Deposition"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 208 - 211. https://doi.org/10.1109/SISPAD.2013.6650611 | |
| 1322. | Wolf, S., Neophytou, N., Stanojevic, Z.: "Monte Carlo Simulations Of Thermal Conductivity Nanoporous Si Membranes"; Vortrag: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in: "Book of Abstracts", (2013), S. 1 - 4. | |
| 1321. | Gös, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T.: "Multi-Phonon Processes as the Origin of Reliability Issues"; Vortrag: Meeting of the Electrochemical Society (ECS), San Francisco, USA (eingeladen); 27.10.2013 - 01.11.2013; in: "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", 58/7/ (2013), S. 31 - 47. https://doi.org/10.1149/05807.0031ecst | |
| 1320. | Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator"; Vortrag: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in: "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), S. 456 - 457. | |
| 1319. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Novel MTJ-Based Shift Register for Non-Volatile Logic Applications"; Vortrag: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in: "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), S. 36 - 37. https://doi.org/10.1109/NanoArch.2013.6623038 | |
| 1318. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Novel Non-Volatile Magnetic Flip Flop"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 29.07.2013 - 02.08.2013; in: "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 S. | |
| 1317. | Rupp, K., Smith, B.: "On Level Scheduling for Incomplete LU Factorization Preconditioners on Accelerators"; Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 19.05.2013 - 24.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), S. 1. | |
| 1316. | Illarionov, Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Isakov, D. V., Grekhov, I.: "Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on Silicon"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 229. | |
| 1315. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 244 - 245. | |
| 1314. | Narducci, D., Lorenzi, B., Tonini, R., Frabboni, S., Gazzadi, G., Ottaviani, G., Neophytou, N., Zianni, X.: "Paradoxical Enhancement of the Power Factor in Polycrystalline Silicon Due to the Formation of Nanovoids"; Vortrag: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in: "Book of Abstracts", (2013), S. 52. | |
| 1313. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 163 - 166. https://doi.org/10.1109/SISPAD.2013.6650600 | |
| 1312. | Moradinasab, M., Pourfath, M., Baumgartner, O., Kosina, H.: "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers"; Poster: The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA; 15.09.2013 - 20.09.2013. | |
| 1311. | Orio, R., Selberherr, S.: "Physically Based Models of Electromigration"; Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 03.06.2013 - 05.06.2013; in: "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", 290 (2013), S. 1 - 2. | |
| 1310. | Amoroso, S., Gerrer, L., Asenov, A., Sellier, J. M., Dimov, I., Nedjalkov, M., Selberherr, S.: "Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 25 - 28. https://doi.org/10.1109/SISPAD.2013.6650565 | |
| 1309. | Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Gös, W., Kaczer, B.: "Recent Advances in Understanding Oxide Traps in pMOS Transistors"; Vortrag: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan (eingeladen); 07.11.2013 - 09.11.2013; in: "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5; S. 95 - 96. | |
| 1308. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 16.09.2013 - 20.09.2013; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9; S. 334 - 337. https://doi.org/10.1109/ESSDERC.2013.6818886 | |
| 1307. | Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P.-J., Grasser, T.: "Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), S. 1 - 6. | |
| 1306. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach"; Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 21.01.2013 - 23.01.2013; in: "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", 46 (2013), 1 S. | |
| 1305. | Franco, J., Kaczer, B., Roussel, P., Toledano-Luque, M., Weckx, P., Grasser, T.: "Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 69 - 72. | |
| 1304. | Kaczer, B., Chen, C., Watt, J., Chanda, K., Weckx, P., Toledano-Luque, M., Groeseneken, G., Grasser, T.: "Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications"; Vortrag: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; S. 94 - 97. | |
| 1303. | Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 368 - 371. https://doi.org/10.1109/SISPAD.2013.6650651 | |
| 1302. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration"; Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in: "Proceedings of the International Conference on Nanoscale Magnetism", (2013), S. 208. | |
| 1301. | Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: "STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications"; Vortrag: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada (eingeladen); 17.07.2013 - 19.07.2013; in: "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5; 1 S. | |
| 1300. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs"; Vortrag: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 64 - 65. | |
| 1299. | Sverdlov, V., Selberherr, S.: "Silicon Spintronics and its Applications"; Vortrag: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine (eingeladen); 08.04.2013 - 11.04.2013; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; S. 51 - 52. | |
| 1298. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: "Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer"; Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 01.09.2013 - 04.09.2013; in: "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), S. 101. | |
| 1297. | Moradinasab, M., Pourfath, M., Kosina, H.: "Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects"; Poster: Graphene Week, Chemnitz, Germany; 02.06.2013 - 07.06.2013; in: "Book of Abstracts", (2013), S. 250. | |
| 1296. | Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S.: "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer"; Vortrag: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in: "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), S. 713 - 714. | |
| 1295. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films"; Vortrag: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 12.05.2013 - 16.05.2013; in: "223th ECS Meeting", 894 (2013), ISBN: 978-1-56677-866-4; S. 1. | |
| 1294. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Spin Lifetime Enhancement in Strained Thin Silicon Films"; Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in: "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 S. | |
| 1293. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I., Georgieva, R.: "Stochastic Alternative to Newton's Acceleration"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), S. 77 - 78. | |
| 1292. | Singulani, A. P., Ceric, H., Selberherr, S.: "Stress Estimation in Open Tungsten TSV"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 65 - 68. https://doi.org/10.1109/SISPAD.2013.6650575 | |
| 1291. | Singulani, A. P., Ceric, H., Selberherr, S.: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; 30.09.2013 - 04.10.2013. | |
| 1290. | Singulani, A. P., Ceric, H., Langer, E.: "Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 216 - 220. https://doi.org/10.1109/IPFA.2013.6599155 | |
| 1289. | Singulani, A. P., Ceric, H., Langer, E.: "Stress reduction induced by Bosch scallops on an open TSV technology"; Poster: IEEE International Interconnect Technology Conference (IITC), Kyoto, Japan; 13.06.2013 - 15.06.2013; in: "Proceedings of the International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9; S. 1 - 2. https://doi.org/10.1109/IITC.2013.6615578 | |
| 1288. | Makarov, A., Sverdlov, V., Selberherr, S.: "Structural Optimization of MTJs with a Composite Free Layer"; Vortrag: SPIE Spintronics, San Diego, CA, USA (eingeladen); 25.08.2013 - 29.08.2013; in: "Proceedings of SPIE Spintronics", (2013), S. OP108-86. | |
| 1287. | Makarov, A., Sverdlov, V., Selberherr, S.: "Structural Optimization of MTJs with a Composite Free Layer"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 74 - 75. | |
| 1286. | Stanojevic, Z., Kosina, H.: "Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 352 - 355. https://doi.org/10.1109/SISPAD.2013.6650647 | |
| 1285. | Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: "Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 238 - 239. | |
| 1284. | Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: "The Role of Annihilation in a Wigner Monte Carlo Approach"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 03.06.2013 - 07.06.2013; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), S. 78. | |
| 1283. | Schwaha, P., Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: "The Ultimate Equivalence Between Coherent Quantum and Classical Regimes"; Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 152 - 153. | |
| 1282. | Karamitaheri, H., Neophytou, N., Kosina, H.: "Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 98 - 99. | |
| 1281. | Karamitaheri, H., Neophytou, N., Kosina, H.: "Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions"; Vortrag: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 30.06.2013 - 04.07.2013; in: "Book of Abstracts", (2013), 1 S. | |
| 1280. | Neophytou, N., Kosina, H.: "Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures"; Vortrag: APS March Meeting, Baltimore, Maryland, USA; 18.03.2013 - 22.03.2013; in: "Bulletin American Physical Society (APS March Meeting)", (2013), 1 S. | |
| 1279. | Tillet, Ph., Rupp, K., Selberherr, S., Lin, C.: "Towards Performance-Portable, Scalable, and Convenient Linear Algebra"; Vortrag: USENIX Workshop on Hot Topics in Parallelism, San Jose, CA, USA; 24.06.2013 - 25.06.2013; in: "Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism", (2013), S. 1 - 8. | |
| 1278. | Kareva, G.G., Vexler, M. I., Illarionov, Yu.: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 25.06.2013 - 28.06.2013; in: "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0; S. 246 - 247. | |
| 1277. | Makarov, A., Sverdlov, V., Selberherr, S.: "Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 267 - 270. https://doi.org/10.1109/IPFA.2013.6599165 | |
| 1276. | Vexler, M. I., Illarionov, Yu., Suturin, S. M., Fedorov, V. V., Sokolov, N. S.: "Tunnel charge transport in Au/CaF2/Si(111) system"; Vortrag: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 74. | |
| 1275. | Tyaginov, S. E., Osintsev, D., Illarionov, Yu., Park, J.M., Enichlmair, H., Vexler, M. I., Grasser, T.: "Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; S. 441. | |
| 1274. | Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: "Two-dimensional Transient Wigner Particle Model"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; S. 404 - 407. https://doi.org/10.1109/SISPAD.2013.6650660 | |
| 1273. | Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T.: "Understanding Correlated Drain and Gate Current Fluctuations"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France (eingeladen); 30.09.2013 - 04.10.2013; in: "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), S. 51 - 56. | |
| 1272. | Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T.: "Understanding Correlated Drain and Gate Current Fluctuations"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 51 - 56. | |
| 1271. | Franco, J., Kaczer, B., Roussel, Ph. J., Mitard, J., Sioncke, S., Witters, L., Mertens, H., Grasser, T., Groeseneken, G.: "Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), S. 397 - 400. https://doi.org/10.1109/IEDM.2013.6724634 | |
| 1270. | Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: "Using Strain to Increase the Reliability of Scaled Spin MOSFETs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; S. 770 - 773. https://doi.org/10.1109/IPFA.2013.6599272 | |
| 1269. | Stanojevic, Z., Baumgartner, O., Schnass, K., Karner, M., Kosina, H.: "VSP - a Quantum Simulator for Engineering Applications"; Vortrag: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7; S. 132 - 133. | |
| 1268. | Rupp, K., Tillet, Ph., Rudolf, F., Weinbub, J.: "ViennaCL - Portable High Performance at High Convenience"; Vortrag: The European Conference on Numerical Mathematics and Advanced Applications (ENUMATH), Lausanne, Switzerland (eingeladen); 26.08.2013 - 30.08.2013; in: "ENUMATH 2013 Proceedings", (2013), S. 1 - 2. | |
| 1267. | Rudolf, F., Rupp, K., Selberherr, S.: "ViennaMesh - a Highly Flexible Meshing Framework"; Vortrag: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 20.05.2013 - 25.05.2013; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 S. | |
| 1266. | Wagner, M., Rupp, K., Weinbub, J.: "A Comparison of Algebraic Multigrid Preconditioners using Graphics Processing Units and Multi-Core Central Processing Units"; Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "Proceedings of the High Performance Computing Symposium (HPC)", ACM, (2012), ISBN: 978-1-61839-788-1; 7 S. https://doi.org/10.5555/2338816.2338818 | |
| 1265. | Weinbub, J., Rupp, K., Selberherr, S.: "A Flexible Execution Framework for High-Performance TCAD Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 400 - 403. | |
| 1264. | Weinbub, J., Rupp, K., Selberherr, S.: "A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing"; Vortrag: World Congress on Engineering (WCE), London, UK; 04.07.2012 - 06.07.2012; in: "Proceedings of the World Congress on Engineering (WCE)", (2012), ISBN: 978-988-19252-1-3; S. 1076 - 1081. | |
| 1263. | Weinbub, J.: "A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing"; Vortrag: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 S. | |
| 1262. | Palankovski, V., Kuzmik, J.: "A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications"; Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 2551, 1 S. | |
| 1261. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: "A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 225 - 228. | |
| 1260. | Semenov, A., Dedyk, A. I., Belavsky, P. Y., Pavlova, Yu. V., Karmanenko, S., Pakhomov, O., Starkov, A., Starkov, I.: "A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 77. | |
| 1259. | Nematian, H., Moradinasab, M., Noei, M., Pourfath, M., Fathipour, M., Kosina, H.: "A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 217 - 218. | |
| 1258. | Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G.: "A mid-infrared dual wavelenght quantum cascade structure designed for both emission and detection"; Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012. | |
| 1257. | Stanojevic, Z., Baumgartner, O., Kosina, H.: "A stable discretization method for "Dirac-like" effective Hamiltonians"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden near Vienna, Austria; 02.09.2012 - 06.09.2012; in: "Proc. International Quantum Cascade Lasers School & Workshop", (2012), S. 127. | |
| 1256. | Ceric, H., Orio, R., Zisser, W. H., Selberherr, S.: "Ab Initio Method for Electromigration Analysis"; Vortrag: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0; 4 S. https://doi.org/10.1109/IPFA.2012.6306306 | |
| 1255. | Starkov, A., Pakhomov, O., Starkov, I.: "Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in: "Abstract Book", (2012), S. 238. | |
| 1254. | Waltl, M., Wagner, P.-J., Reisinger, H., Rott, K., Grasser, T.: "Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI"; Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 74 - 79. | |
| 1253. | Tillet, Ph., Rupp, K., Selberherr, S.: "An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations"; Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", ACM, (2012), ISBN: 978-1-61839-788-1; 7 S. | |
| 1252. | Orio, R., Ceric, H., Selberherr, S.: "Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via"; Vortrag: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; S. 273 - 280. https://doi.org/10.1149/04901.0273ecst | |
| 1251. | Starkov, I., Enichlmair, H., Tyaginov, S. E., Grasser, T.: "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1250. | Neophytou, N., Karamitaheri, H., Kosina, H.: "Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications"; Vortrag: International Conference on Nanosciences and Nanotechnologies, Thessaloniki, Greece; 03.07.2012 - 06.07.2012; in: "Abstract Book", (2012), S. 46. | |
| 1249. | Ceric, H., Orio, R., Selberherr, S.: "Atomistic Method for Analysis of Electromigration"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 04.06.2012 - 06.06.2012; in: "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3; 3 S. | |
| 1248. | Neophytou, N., Kosina, H.: "Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects"; Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (eingeladen); 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 488. | |
| 1247. | Rupp, K., Jungemann, C., Bina, M., Jüngel, A., Grasser, T.: "Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 19 - 22. | |
| 1246. | Karamitaheri, H., Neophytou, N., Kosina, H.: "Calculations of Confined Phonon Spectrum in Narrow Si Nanowires using the Valence Force Field Method"; Poster: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1245. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S.: "Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs"; Vortrag: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 20.06.2012 - 22.06.2012; in: "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), S. 190 - 194. | |
| 1244. | Starkov, I., Enichlmair, H., Tyaginov, S. E., Grasser, T.: "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; S. 1 - 6. https://doi.org/10.1109/IPFA.2012.6306266 | |
| 1243. | Toledano-Luque, M., Kaczer, B., Simoen, E., Degraeve, R., Franco, J., Roussel, Ph. J., Grasser, T., Groeseneken, G.: "Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1242. | Palankovski, V., Kuzmik, J.: "Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation"; Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 2543, 1 S. | |
| 1241. | Weinbub, J.: "Distributed High-Performance Parallel Mesh Generation with ViennaMesh"; Vortrag: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 10.06.2012 - 13.06.2012; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012), 1 S. | |
| 1240. | Starkov, A., Starkov, I.: "Domain-Wall Motion for Slowly Varying Electric Field"; Vortrag: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 20.08.2012 - 24.08.2012; in: "Abstract Book", (2012), S. 93. | |
| 1239. | Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G.: "Dual-color quantum cascade structure for coherent emission and detection"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012. | |
| 1238. | Moradinasab, M., Nematian, H., Noei, M., Pourfath, M., Fathipour, M., Kosina, H.: "Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 249 - 250. | |
| 1237. | Filipovic, L., Selberherr, S.: "Electric Field Based Simulations of Local Oxidation Nanolithography using Atomic Force Microscopy in a Level Set Environment"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 30.08.2012 - 02.09.2012; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; S. 265 - 272. https://doi.org/10.1149/04901.0265ecst | |
| 1236. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Vortrag: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 19.09.2012 - 21.09.2012; in: "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0; S. 156 - 162. | |
| 1235. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 153 - 156. | |
| 1234. | Orio, R., Ceric, H., Selberherr, S.: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 01.10.2012 - 05.10.2012; in: "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), S. 1981 - 1986. | |
| 1233. | Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S.: "Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs"; Vortrag: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 11.11.2012 - 15.11.2012; in: "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3; S. 55 - 58. https://doi.org/10.1109/ASDAM.2012.6418556 | |
| 1232. | Makarov, A., Selberherr, S., Sverdlov, V.: "Emerging Non-Volatile Memories for Ultra-Low Power Applications"; Vortrag: Informationstagung Mikroelektronik (ME), Vienna, Austria (eingeladen); 23.04.2012 - 24.04.2012; in: "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7; S. 21 - 24. | |
| 1231. | Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H.: "Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons"; Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 77 - 78. | |
| 1230. | Neophytou, N., Karamitaheri, H., Kosina, H.: "Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling"; Vortrag: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1229. | Aichinger, T., Lenahan, P., Grasser, T., Pobegen, G., Nelhiebel, M.: "Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1228. | Sverdlov, V., Makarov, A., Selberherr, S.: "Fast Switching in MTJs with a Composite Free Layer"; Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 291. | |
| 1227. | Orio, R., Selberherr, S.: "Formation and Movement of Voids in Copper Interconnect Structures"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (eingeladen); 29.10.2012 - 01.11.2012; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5; S. 378 - 381. https://doi.org/10.1109/ICSICT.2012.6467675 | |
| 1226. | Windbacher, T., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: "Fully Electrically Read- Write Magneto Logic Gates"; Vortrag: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 07.10.2012 - 10.10.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1225. | Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Molnar, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmik, J.: "GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access Region"; Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France; 30.05.2012 - 01.06.2012; in: "Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits", (2012), 2 S. | |
| 1224. | Neophytou, N., Kosina, H.: "Gate Field Induced Bandstructure and Mobility Variations in p-type Silicon Nanowires"; Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), S. 131 - 132. | |
| 1223. | Makarov, A., Sverdlov, V., Selberherr, S.: "Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 02.12.2012 - 07.12.2012; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0; S. 21. | |
| 1222. | Selberherr, S.: "Giving Silicon a Spin"; Vortrag: International Conference on Enabling Science and Nanotechnology, Johor Bahru, Malaysia (eingeladen); 05.01.2012 - 07.01.2012; in: "Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012)", (2012), 1 S. | |
| 1221. | Makarov, A., Sverdlov, V., Selberherr, S.: "High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer"; Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 25.09.2012 - 27.09.2012; in: "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 S. | |
| 1220. | Rupp, K., Weinbub, J., Rudolf, F.: "Highly Productive Application Development with ViennaCL for Accelerators"; Poster: AGU Fall Meeting, San Francisco, USA (eingeladen); 03.12.2012 - 07.12.2012. | |
| 1219. | Karamitaheri, H., Pourfath, M., Kosina, H.: "Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor"; Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1218. | Rott, K., Schmitt-Landsiedel, D., Reisinger, H., Rott, G.A., Georgakos, G., Schluender, C., Aresu, S., Gustin, W., Grasser, T.: "Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits"; Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 31 - 34. | |
| 1217. | Tyaginov, S. E., Starkov, I., Triebl, O., Karner, M., Kernstock, C., Jungemann, C., Enichlmair, H., Park, J.M., Grasser, T.: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 02.07.2012 - 06.07.2012; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; S. 1 - 5. https://doi.org/10.1109/IPFA.2012.6306265 | |
| 1216. | Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Mitard, J., Ragnarsson, L., Witters, L., Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Bukhori, M. F., Grasser, T., Asenov, A.: "Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs"; Vortrag: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1215. | Rupp, K., Lagger, P., Grasser, T.: "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 109 - 110. | |
| 1214. | Donnarumma, G., Palankovski, V., Selberherr, S.: "Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 125 - 128. | |
| 1213. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements"; Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 29.04.2012 - 04.05.2012; in: "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 S. | |
| 1212. | Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G.: "Large Silicon Solar Cells of a Lateral Type"; Poster: 2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium; 03.04.2012 - 05.04.2012. | |
| 1211. | Starkov, I., Enichlmair, H., Grasser, T.: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET"; Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 40. | |
| 1210. | Kosina, H., Neophytou, N.: "Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation"; Vortrag: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (eingeladen); 26.10.2012 - 28.10.2012; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), S. 419. | |
| 1209. | Sverdlov, V., Selberherr, S.: "MOSFET and Spin Transistor Simulations"; Vortrag: 2012 CMOS Emerging Technologies, Vancouver, BC Canada (eingeladen); 18.07.2012 - 21.07.2012; in: "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 S. | |
| 1208. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: "MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 17.09.2012 - 21.09.2012; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2; S. 254 - 257. https://doi.org/10.1109/ESSDERC.2012.6343381 | |
| 1207. | Makarov, A., Sverdlov, V., Selberherr, S.: "Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 225 - 226. | |
| 1206. | Makarov, A., Sverdlov, V., Selberherr, S.: "Modeling Emerging Non-Volatile Memories: Current Trends and Challenges"; Vortrag: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 01.04.2012 - 02.04.2012; in: "Physics Procedia", (2012), S. 99 - 104. https://doi.org/10.1016/j.phpro.2012.03.056 | |
| 1205. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Modeling Spintronic Effects in Silicon"; Vortrag: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany (eingeladen); 24.09.2012 - 28.09.2012; in: "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 S. | |
| 1204. | Orio, R., Ceric, H., Selberherr, S.: "Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 268 - 271. | |
| 1203. | Bina, M., Rupp, K., Tyaginov, S. E., Triebl, O., Grasser, T.: "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), S. 713 - 716. https://doi.org/10.1109/IEDM.2012.6479138 | |
| 1202. | Tyaginov, S. E., Grasser, T.: "Modeling of Hot-Carrier Degradation: Physics and Controversial Issues"; Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 206 - 215. | |
| 1201. | Ceric, H., Orio, R., Zisser, W. H., Schnitzer, V., Selberherr, S.: "Modeling of Microstructural Effects on Electromigration Failure"; Vortrag: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan (eingeladen); 28.05.2012 - 30.05.2012; in: "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), S. 50 - 51. | |
| 1200. | Grasser, T., Kaczer, B., Reisinger, H., Wagner, P.-J., Toledano-Luque, M.: "Modeling of the bias temperature instability under dynamic stress and recovery conditions"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (eingeladen); 29.10.2012 - 01.11.2012; in: "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8; S. 1 - 4. https://doi.org/10.1109/ICSICT.2012.6466737 | |
| 1199. | Zianni, X., Neophytou, N., Ferri, M., Roncaglia, A., Narducci, D.: "Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowiress"; Vortrag: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 09.07.2012 - 12.07.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1198. | Makarov, A., Sverdlov, V., Selberherr, S.: "New Trends in Microelectronics: Towards an Ultimate Memory Concept"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico (eingeladen); 14.03.2012 - 17.03.2012; in: "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6; 2 S. https://doi.org/10.1109/ICCDCS.2012.6188887 | |
| 1197. | Serrano-Lopez, I., Garcia-Barrientos, A., Palankovski, V., del Carmen Cruz-Netro, L.: "Non-Stationary Effects of Space Charge in InN Films"; Vortrag: International Materials Research Congress, Cancun, Mexico; 12.08.2012 - 17.08.2012; in: "XXI International Materials Research Congress", (2012), 1 S. | |
| 1196. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Novel Memristive Charge- and Flux-Based Sensors"; Vortrag: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 12.06.2012 - 15.06.2012; in: "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9; 4 S. | |
| 1195. | Wagner, P.-J., Kaczer, B., Scholten, A., Reisinger, H., Bychikhin, S., Pogany, D., Vandamme, L.K.J., Grasser, T.: "On the Correlation Between NBTI, SILC, and Flicker Noise"; Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), S. 60 - 64. | |
| 1194. | Grasser, T., Kaczer, B., Reisinger, H., Wagner, P.-J., Toledano-Luque, M.: "On the Frequency Dependence of the Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1193. | Schanovsky, F., Grasser, T.: "On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1192. | Grasser, T., Reisinger, H., Rott, K., Toledano-Luque, M., Kaczer, B.: "On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2012 - 12.12.2012; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), S. 470 - 473. https://doi.org/10.1109/IEDM.2012.6479076 | |
| 1191. | Moradinasab, M., Karamitaheri, H., Pourfath, M., Kosina, H.: "On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors"; Poster: Graphene Week, Delft, Netherlands; 04.06.2012 - 08.06.2012; in: "Book of Abstracts", (2012), 1 S. | |
| 1190. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I.: "Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 177 - 178. | |
| 1189. | Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D.K.: "Phonon Decoherence in Wigner-Boltzmann Transport"; Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 12.02.2012 - 17.02.2012; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2012), S. 61 - 62. | |
| 1188. | Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Cico, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmik, J.: "Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT"; Vortrag: International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan; 14.10.2012 - 19.10.2012; in: "International Workshop on Nitride Semiconductors", (2012), 2 S. | |
| 1187. | Starkov, A., Baranov, I., Pakhomov, O., Starkov, I., Zaitsev, A.: "Principles of Solid-State Cooler on Layered Multiferroics"; Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 17.09.2012 - 20.09.2012; in: "Conference guide & book of abstracts", (2012), 1 S. | |
| 1186. | Makarov, A., Sverdlov, V., Selberherr, S.: "Recent Developments in Advanced Memory Modeling"; Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 13.05.2012 - 16.05.2012; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0235-7; S. 49 - 52. https://doi.org/10.1109/MIEL.2012.6222795 | |
| 1185. | Grasser, T.: "Recent Developments in Understanding the Bias Temperature Instability"; Vortrag: International Conference on Microelectronics (MIEL), Nis, Serbia (eingeladen); 13.05.2012 - 16.05.2012; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8; S. 315 - 322. https://doi.org/10.1109/MIEL.2012.6222864 | |
| 1184. | Pobegen, G., Nelhiebel, M., Grasser, T.: "Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability"; Vortrag: IEEE International Integrated Reliability Workshop, California; 14.10.2012 - 18.10.2012; in: "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), S. 54 - 59. | |
| 1183. | Rupp, K., Grasser, T., Jüngel, A.: "Recent advances in the spherical harmonics expansion of the Boltzmann transport equation"; Vortrag: Congresso Nationale Simai 2012, Turin, Italy; 25.06.2012 - 28.06.2012; in: "Abstracts of Congresso Nationale Simai 2012", (2012), S. 183. | |
| 1182. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: "Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 229 - 230. | |
| 1181. | Makarov, A., Sverdlov, V., Selberherr, S.: "Reduction of the Switching Current in Spin Transfer Torque Random Access Memory"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 25.06.2012 - 29.06.2012; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), S. 49. | |
| 1180. | Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Eneman, G., Roussel, Ph. J., Cho, M., Kauerauf, T., Grasser, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G.: "Reliability of SiGe Channel MOS"; Vortrag: Honolulu PRiME 2012, Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper-Nr. 3119, 1 S. | |
| 1179. | Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D.K., Vasileska, D., Dollfus, P., Querlioz, D.: "Role of the Physical Scales on the Transport Regime"; Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 47 - 48. | |
| 1178. | Makarov, A., Sverdlov, V., Selberherr, S.: "STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution"; Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. H4. | |
| 1177. | Reininger, P., Schwarz, B., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G.: "Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser"; Poster: International Conference on Physics of Semiconductor (ICPS), Zürich, Schweiz; 29.07.2012 - 03.08.2012. | |
| 1176. | Bina, M., Triebl, O., Schwarz, B., Karner, M., Kaczer, B., Grasser, T.: "Simulation of Reliability on Nanoscale Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 109 - 112. | |
| 1175. | Filipovic, L., Selberherr, S.: "Simulation of Silicon Nanopatterning Using nc-AFM"; Poster: International Conference on non-contact Atomic Force Microscopy, Cesky Krumlov; 01.07.2012 - 05.07.2012; in: "Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM)", (2012), S. 108. | |
| 1174. | Reininger, P., Schwarz, B., Kalchmair, S., Gansch, R., Baumgartner, O., Stanojevic, Z., Kosina, H., Schrenk, W., Strasser, G.: "Simulation of a dual wavelength quantum cascade laser in a photonic crystal cavity"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden; 02.09.2012 - 06.09.2012. | |
| 1173. | Filipovic, L., Selberherr, S.: "Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 189 - 192. | |
| 1172. | Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: "Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate"; Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. J3. | |
| 1171. | Lukash, M., Rupp, K., Selberherr, S.: "Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs"; Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 26.03.2012 - 29.03.2012; in: "HPC '12 Proceedings of the 2012 Symposium on High Performance Computing", (2012), ISBN: 978-1-61839-788-1; 7 S. | |
| 1170. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in: "Book of Abstracts", (2012), S. P-6. | |
| 1169. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: "State Drift Optimization of Memristive Stateful IMP Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 243 - 244. | |
| 1168. | Osintsev, D., Stanojevic, Z., Baumgartner, O., Sverdlov, V., Selberherr, S.: "Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs"; Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 29.07.2012 - 03.08.2012; in: "31st International Conference on the Physics of Semiconductors (ICPS 2012)", 1566 (2012), ISBN: 978-0-7354-1194-4; 1 S. https://doi.org/10.1063/1.4848413 | |
| 1167. | Makarov, A., Sverdlov, V., Selberherr, S.: "Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 229 - 232. | |
| 1166. | Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Crupi, F., Eneman, G., Roussel, Ph. J., Grasser, T., Cho, M., Kauerauf, T., Witters, L., Hellings, G., Ragnarsson, L., Horiguchi, N., Heyns, M., Groeseneken, G.: "Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications"; Vortrag: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA (eingeladen); 30.05.2012 - 01.06.2012; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2012), S. 1 - 4. | |
| 1165. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 02.12.2012 - 07.12.2012; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0; S. 33. | |
| 1164. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: "Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs"; Vortrag: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 23.07.2012 - 25.07.2012; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), S. B3. | |
| 1163. | Sverdlov, V., Makarov, A., Selberherr, S.: "Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer"; Vortrag: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 S. | |
| 1162. | Cervenka, J., Steinmair, A., Park, J.M., Seebacher, E., Grasser, T.: "TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors"; Vortrag: European Workshop on CMOS Variability, Nice, France; 11.06.2012 - 12.06.2012; in: "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3; 4 S. | |
| 1161. | Ceric, H., Orio, R., Selberherr, S.: "TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 05.09.2012 - 07.09.2012; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; S. 264 - 267. | |
| 1160. | Rupp, K.: "The High-Level Linear Algebra Library ViennaCL and Its Applications"; Vortrag: GPU Technology Conference, San Jose, California, USA; 14.05.2012 - 17.05.2012; in: "Abstracts of GPU Technology Conference", (2012), S. 77. | |
| 1159. | Dedyk, A. I., Pavlova, Yu. V., Semenov, A., Pakhomov, O., Starkov, A., Starkov, I., Beliavskiy, P. Yu.: "The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures"; Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 S. https://doi.org/10.1109/ISAF.2012.6297838 | |
| 1158. | Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Bukhori, M. F., Asenov, A., Schwarz, B., Bina, M., Grasser, T., Groeseneken, G.: "The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes"; Vortrag: International Reliability Physics Symposium (IRPS), Californi, USA; 17.04.2012 - 19.04.2012; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 S. | |
| 1157. | Starkov, A., Starkov, I.: "Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall"; Vortrag: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 09.07.2012 - 13.07.2012; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1; 1 S. https://doi.org/10.1109/ISAF.2012.6297837 | |
| 1156. | Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H.: "Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors"; Vortrag: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 06.05.2012 - 10.05.2012; in: "ECS Meeting", (2012), 1 S. | |
| 1155. | Karamitaheri, H., Pourfath, M., Neophytou, N., Kosina, H.: "Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor"; Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 07.10.2012 - 12.10.2012; in: "ECS Meeting", (2012), 1 S. | |
| 1154. | Singulani, A. P., Ceric, H., Selberherr, S.: "Thermo-mechanical Simulations of an Open Tungsten TSV"; Vortrag: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 05.12.2012 - 07.12.2012; in: "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4; S. 110 - 114. https://doi.org/10.1109/EPTC.2012.6507061 | |
| 1153. | Starkov, A., Pakhomov, O., Starkov, I.: "Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 25.06.2012 - 27.06.2012; in: "Abstract Booklet", (2012), S. 76. | |
| 1152. | Neophytou, N., Kosina, H.: "Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires"; Vortrag: International Workshop on Computational Electronics (IWCE), Madison, WI, USA (eingeladen); 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 67 - 68. | |
| 1151. | Neophytou, N., Kosina, H.: "Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures"; Vortrag: APS March Meeting, Boston, USA; 27.02.2012 - 02.03.2012; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 S. | |
| 1150. | Weinbub, J., Rupp, K., Filipovic, L., Makarov, A., Selberherr, S.: "Towards a Free Open Source Process and Device Simulation Framework"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 22.05.2012 - 25.05.2012; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), S. 141 - 142. | |
| 1149. | Osintsev, D., Sverdlov, V., Selberherr, S.: "Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 23.01.2012 - 25.01.2012; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), S. 77 - 78. | |
| 1148. | Weinbub, J., Rupp, K., Selberherr, S.: "Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development"; Vortrag: C++Now, Aspen, CO, USA; 13.05.2012 - 18.05.2012; in: "Proceedings of C++Now (2012)", (2012), 10 S. | |
| 1147. | Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: "Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 05.08.2012 - 08.08.2012; in: "Book of Abstracts", (2012), S. P-27. | |
| 1146. | Orio, R., Ceric, H., Selberherr, S.: "A Compact Model for Early Electromigration Lifetime Estimation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 23 - 26. https://doi.org/10.1109/SISPAD.2011.6035040 | |
| 1145. | Manavizadeh, N., Pourfath, M., Raissi, F., Asl-Soleimani, E.: "A Comprehensive Study of Nanoscale Field Effect Diodes"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S. https://doi.org/10.1109/ESIME.2011.5765817 | |
| 1144. | Rupp, K., Jüngel, A., Grasser, T.: "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors"; Vortrag: Facing the Multicore Challenge II, Karlsruhe, Germany; 28.09.2011 - 30.09.2011; in: "Proceedings of Facing the Multicore Challenge II", (2011), 11 S. | |
| 1143. | Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S.: "A Generic High-Quality Meshing Framework"; Vortrag: Symposium on Trends in Unstructured Mesh Generation (Meshtrends), Minneapolis, USA; 25.07.2011 - 28.07.2011; in: "Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM)", (2011), 1 S. | |
| 1142. | Filipovic, L., Selberherr, S.: "A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 307 - 310. https://doi.org/10.1109/SISPAD.2011.6035031 | |
| 1141. | Filipovic, L., Nedjalkov, M., Selberherr, S.: "A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 42 - 43. | |
| 1140. | Filipovic, L., Ceric, H., Cervenka, J., Selberherr, S.: "A Simulator for Local Anodic Oxidation of Silicon Surfaces"; Vortrag: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 08.05.2011 - 11.05.2011; in: "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8; S. 695 - 698. https://doi.org/10.1109/CCECE.2011.6030543 | |
| 1139. | Filipovic, L., Selberherr, S.: "A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator"; Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 30. | |
| 1138. | Stanojevic, Z., Karner, M., Schnass, K., Kernstock, Ch., Baumgartner, O., Kosina, H.: "A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 143 - 146. https://doi.org/10.1109/SISPAD.2011.6035089 | |
| 1137. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: "About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer"; Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 18.09.2011 - 22.09.2011; in: "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7; S. 444. | |
| 1136. | Starkov, I., Tyaginov, S. E., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Vortrag: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 25.09.2011 - 30.09.2011; in: "GADEST 2011: Abstract Booklet", (2011), S. 105 - 106. | |
| 1135. | Rupp, K., Grasser, T., Jüngel, A.: "Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 151 - 155. https://doi.org/10.1109/SISPAD.2011.6034964 | |
| 1134. | Gös, W., Schanovsky, F., Grasser, T., Reisinger, H., Kaczer, B.: "Advanced Modeling of Oxide Defects for Random Telegraph Noise"; Vortrag: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 12.06.2011 - 16.06.2011; in: "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 S. | |
| 1133. | Tyaginov, S. E., Starkov, I., Enichlmair, H., Jungemann, C., Park, J.M., Seebacher, E., Orio, R., Ceric, H., Grasser, T.: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Vortrag: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), S. 1525 - 1529. | |
| 1132. | Starkov, I., Starkov, A. S., Tyaginov, S. E., Enichlmair, H., Ceric, H., Grasser, T.: "An Analytical Model for MOSFET Local Oxide Capacitance"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1131. | Osintsev, D., Makarov, A., Selberherr, S., Sverdlov, V.: "An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation"; Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 S. | |
| 1130. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: "An Investigation of ZGNR-Based Transistors"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1129. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices"; Vortrag: 219th ECS Meeting, Montreal, Canada; 01.05.2011 - 06.05.2011; in: "219th ECS Meeting", (2011), 1 S. | |
| 1128. | Starkov, I., Ceric, H., Tyaginov, S. E., Grasser, T.: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Vortrag: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 03.07.2011 - 07.07.2011; in: "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0; 4 S. https://doi.org/10.1109/PRIME.2011.5966251 | |
| 1127. | Starkov, I., Ceric, H., Tyaginov, S. E., Grasser, T., Enichlmair, H., Park, J.M., Jungemann, C.: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 127 - 130. https://doi.org/10.1109/SISPAD.2011.6035066 | |
| 1126. | Grasser, T., Wagner, P.-J., Reisinger, H., Aichinger, T., Pobegen, G., Nelhiebel, M., Kaczer, B.: "Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131624 | |
| 1125. | Kaczer, B., Mahato, S., Valduga de Almeida Camargo, V., Toledano-Luque, M., Roussel, Ph. J., Grasser, T., Catthoor, F., Dobrovolny, P., Zuber, P., Wirth, G.I., Groeseneken, G.: "Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations"; Poster: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 5 S. | |
| 1124. | Neophytou, N., Kosina, H.: "Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation"; Vortrag: Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11), Plomarion, Greece; 14.06.2011 - 17.06.2011; in: "Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11)", (2011), 1 S. | |
| 1123. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Selberherr, S.: "Ballistic Spin Field Effect Transistor Based on Silicon Nanowires"; Vortrag: APS March Meeting, Dallas, Texas, USA; 21.03.2011 - 25.03.2011; in: "Bulletin American Physical Society (APS March Meeting 2011)", (2011). | |
| 1122. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S.: "Ballistic Spin Field-Effect Transistors Built on Silicon Fins"; Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), S. 59 - 60. | |
| 1121. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: "Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; S. 155 - 162. https://doi.org/10.1149/1.3615189 | |
| 1120. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: "Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), S. 229. | |
| 1119. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: "Ballistic Transport in Spin Field-Effect Transistors Built on Silicon"; Vortrag: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 S. | |
| 1118. | Gös, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T.: "Bistable Defects as the Cause for NBTI and RTN"; Vortrag: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria (eingeladen); 25.09.2011 - 30.09.2011; in: "GADEST 2011: Abstract Booklet", (2011), S. 153. | |
| 1117. | Grasser, T.: "Charge Trapping in Oxides From RTN to BTI"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 10.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 128 S. | |
| 1116. | Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H.: "Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S. https://doi.org/10.1109/ESIME.2011.5765816 | |
| 1115. | Orio, R., Selberherr, S.: "Compact Modeling of Interconnect Reliability"; Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (eingeladen); 17.11.2011 - 18.11.2011; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 S. https://doi.org/10.1109/EDSSC.2011.6117564 | |
| 1114. | Neophytou, N., Kosina, H.: "Confinement-Induced Mobility Increase in p-type [110] and [111] Silicon Nanowires"; Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI)", (2011), 2 S. | |
| 1113. | Southwick III, R., Purnell, S. T., Rapp, B. A., Thompson, R. J., Pugmire, S. K., Kaczer, B., Grasser, T., Knowlton, B.: "Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices"; Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 12 - 16. | |
| 1112. | Weinbub, J., Rupp, K., Selberherr, S.: "Distributed Heterogenous High-Performance Computing with ViennaCL"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 88 - 90. | |
| 1111. | Mahmoudi, H., Sverdlov, V., Selberherr, S.: "Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1110. | Baumgartner, O., Stanojevic, Z., Kosina, H.: "Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 91 - 94. https://doi.org/10.1109/SISPAD.2011.6035057 | |
| 1109. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: "Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5; 2 S. | |
| 1108. | Karamitaheri, H., Pourfath, M., Neophytou, N., Pazoki, M., Kosina, H.: "First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications"; Vortrag: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 05.12.2011 - 07.12.2011; in: "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5; S. 19 - 22. | |
| 1107. | Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, Ph. J., Grasser, T., Hoffmann, T. Y., Groeseneken, G.: "From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation"; Vortrag: Symposium on VLSI Technology, Kyoto, Japan; 14.06.2011 - 16.06.2011; in: "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6; 2 S. | |
| 1106. | Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S.: "High-Quality Mesh Generation Based on Orthogonal Software Modules"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 139 - 142. https://doi.org/10.1109/SISPAD.2011.6035078 | |
| 1105. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: "Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 18.04.2011 - 20.04.2011; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 S. https://doi.org/10.1109/ESIME.2011.5765811 | |
| 1104. | Pobegen, G., Aichinger, T., Grasser, T., Nelhiebel, M.: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Vortrag: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 03.10.2011 - 07.10.2011; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), S. 1530 - 1534. | |
| 1103. | Starkov, I., Ceric, H.: "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 28.09.2011 - 30.09.2011; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), S. 90 - 91. | |
| 1102. | Tyaginov, S. E., Starkov, I., Jungemann, C., Enichlmair, H., Park, J.M., Grasser, T.: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 12.09.2011 - 16.09.2011; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), S. 151 - 154. | |
| 1101. | Poschalko, C., Selberherr, S.: "Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities"; Vortrag: Asia-Pacific International Symposium on Electromagnetic Compatibility, Jeju, Korea; 16.05.2011 - 19.05.2011; in: "Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility", (2011), 4 S. | |
| 1100. | Ceric, H., Orio, R., Selberherr, S.: "Integration of Atomistic and Continuum-Level Electromigration Models"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 04.07.2011 - 07.07.2011; in: "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7; 4 S. https://doi.org/10.1109/IPFA.2011.5992749 | |
| 1099. | Ceric, H., Orio, R., Selberherr, S.: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Vortrag: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (eingeladen); 26.06.2011 - 01.07.2011; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), S. 33. | |
| 1098. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: "Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer"; Vortrag: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 17.07.2011 - 22.07.2011; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 S. | |
| 1097. | Orio, R., Ceric, H., Selberherr, S.: "Modeling Electromigration Lifetimes of Copper Interconnects"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 30.08.2011 - 02.09.2011; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; S. 163 - 169. https://doi.org/10.1149/1.3615190 | |
| 1096. | Makarov, A., Selberherr, S., Sverdlov, V.: "Modeling of Advanced Memories"; Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (eingeladen); 17.11.2011 - 18.11.2011; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 S. https://doi.org/10.1109/EDSSC.2011.6117568 | |
| 1095. | Bina, M., Aichinger, T., Pobegen, G., Gös, W., Grasser, T.: "Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model"; Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 27 - 31. | |
| 1094. | Makarov, A., Sverdlov, V., Kryzhanovsky, D., Girkin, M., Selberherr, S.: "Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method"; Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 28.03.2011 - 01.04.2011; in: "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 S. | |
| 1093. | Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., Selberherr, S.: "Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations"; Vortrag: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 24.10.2011 - 26.10.2011; in: "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3; S. 177 - 181. | |
| 1092. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: "Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 01.08.2011 - 05.08.2011; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), S. 238. | |
| 1091. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I.: "Monte Carlo Investigations of Electron Decoherence due to Phonons"; Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 48. | |
| 1090. | Baumgartner, O., Stanojevic, Z., Kosina, H.: "Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers"; Vortrag: Seminar on Monte Carlo Methods (MCM), Borovets; 29.08.2011 - 02.09.2011; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), S. 21. | |
| 1089. | Schanovsky, F., Baumgartner, O., Grasser, T.: "Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 15 - 18. https://doi.org/10.1109/SISPAD.2011.6035038 | |
| 1088. | Ceric, H., Orio, R., Schanovsky, F., Zisser, W. H., Selberherr, S.: "Multilevel Simulation for the Investigation of Fast Diffusivity Paths"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 135 - 138. https://doi.org/10.1109/SISPAD.2011.6035068 | |
| 1087. | Vitanov, S., Kuzmik, J., Palankovski, V.: "Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. https://doi.org/10.1109/ISDRS.2011.6135161 | |
| 1086. | Rupp, K., Grasser, T., Jüngel, A.: "On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131667 | |
| 1085. | Schanovsky, F., Grasser, T.: "On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 17 - 21. | |
| 1084. | Franco, J., Kaczer, B., Eneman, G., Roussel, Ph. J., Cho, M., Mitard, J., Witters, L., Hoffmann, T. Y., Groeseneken, G., Crupi, F., Grasser, T.: "On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 6 S. https://doi.org/10.1109/IRPS.2011.5784545 | |
| 1083. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: "Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching"; Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 04.12.2011 - 09.12.2011; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 S. | |
| 1082. | Rupp, K., Grasser, T., Jüngel, A.: "Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 147 - 150. https://doi.org/10.1109/SISPAD.2011.6034963 | |
| 1081. | Filipovic, L., Ertl, O., Selberherr, S.: "Parallelization Strategy for Hierarchical Run Length Encoded Data Structures"; Vortrag: IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011), Innsbruck; 15.02.2011 - 17.02.2011; in: "Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011)", (2011), ISBN: 978-0-88986-864-9; S. 131 - 138. https://doi.org/10.2316/P.2011.719-045 | |
| 1080. | Aloise, G. R., Vitanov, S., Palankovski, V.: "Performance Study of Nitride-Based Gunn Diodes"; Vortrag: Nanotech 2011, Boston, USA; 13.06.2011 - 16.06.2011; in: "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3; 4 S. | |
| 1079. | Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I.: "Phonon-Induced Decoherence in Electron Evolution"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 74 - 75. | |
| 1078. | Starkov, A., Pakhomov, O., Starkov, I.: "Physical Model for Ferroelectrics Based on Pyrocurrent Consideration"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011. | |
| 1077. | Tyaginov, S. E., Starkov, I., Enichlmair, H., Park, J.M., Jungemann, C., Grasser, T.: "Physics-Based Hot-Carrier Degradation Modeling"; Vortrag: 219th ECS Meeting, Montreal, Canada (eingeladen); 01.05.2011 - 06.05.2011; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 S. | |
| 1076. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 59 - 62. https://doi.org/10.1109/SISPAD.2011.6035049 | |
| 1075. | Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1074. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S.: "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors"; Vortrag: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 01.05.2011 - 06.05.2011; in: "Meeting Abstracts", ECS, MA2011-01(23): 1453 (2011), S. 1. | |
| 1073. | Hehenberger, Ph., Gös, W., Baumgartner, O., Franco, J., Kaczer, B., Grasser, T.: "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 11 - 14. https://doi.org/10.1109/SISPAD.2011.6035036 | |
| 1072. | Kaczer, B., Toledano-Luque, M., Franco, J., Grasser, T., Roussel, Ph. J., Camargo, V. V. A., Mahato, S., Simoen, E., Catthoor, F., Wirth, G.I., Groeseneken, G.: "Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations"; Vortrag: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA (eingeladen); 16.10.2011 - 20.10.2011; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), S. 32. | |
| 1071. | Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Grasser, T., Wirth, G.I., Franco, J., Vrancken, C., Horiguchi, N., Groeseneken, G.: "Response of a Single Trap to AC Negative Bias Temperature Stress"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 S. | |
| 1070. | Tyaginov, S. E., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Park, J.M., Jungemann, C.: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 123 - 126. https://doi.org/10.1109/SISPAD.2011.6035065 | |
| 1069. | Kosina, H.: "Semiconductor Device Modeling: The Last 30 Years"; Vortrag: GMe Forum 2011, Vienna, Austria (eingeladen); 14.04.2011 - 15.04.2011; in: "Abstracts of the Invited Presentations", (2011), S. 9. | |
| 1068. | Starkov, A., Pakhomov, O., Starkov, I.: "Solid-State Cooler - New Opportunities"; Poster: 12th European Meeting on Ferroelectricity, Bordeaux, France; 26.06.2011 - 01.07.2011. | |
| 1067. | Neophytou, N., Kosina, H.: "Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 08.09.2011 - 10.09.2011; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; S. 31 - 34. https://doi.org/10.1109/SISPAD.2011.6035042 | |
| 1066. | Vitanov, S., Kuzmik, J., Palankovski, V.: "Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs"; Vortrag: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 14.09.2011 - 16.09.2011; in: "Annual Journal of Electronics", (2011), S. 113 - 116. | |
| 1065. | Stanojevic, Z., Sverdlov, V., Baumgartner, O., Kosina, H.: "Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 17.01.2011 - 19.01.2011; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), S. 99 - 100. | |
| 1064. | Stanojevic, Z., Sverdlov, V., Selberherr, S.: "Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement"; Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 01.05.2011 - 06.05.2011; in: "219th ECS Meeting", Vol.35, No.5 (2011), ISBN: 978-1-56677-866-4; S. 117 - 122. https://doi.org/10.1149/1.3570785 | |
| 1063. | Franco, J., Kaczer, B., Eneman, G., Roussel, Ph. J., Grasser, T., Mitard, J., Ragnarsson, L., Cho, M., Witters, L., Chiarella, T., Togo, M., Wang, W., Hikavyy, A., Loo, R., Horiguchi, N., Groeseneken, G.: "Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131580 | |
| 1062. | Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: "Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 07.12.2011 - 09.12.2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 S. | |
| 1061. | Aloise, G. R., Vitanov, S., Palankovski, V.: "Temperature Dependence of the Transport Properties of InN"; Vortrag: Microtherm 2011, Lodz, Poland; 28.06.2011 - 01.07.2011; in: "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4; 6 S. | |
| 1060. | Grasser, T., Aichinger, T., Pobegen, G., Reisinger, H., Wagner, P.-J., Franco, J., Nelhiebel, M., Kaczer, B.: "The `Permanent´ Component of NBTI: Composition and Annealing"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 9 S. | |
| 1059. | Neophytou, N., Kosina, H.: "Thermoelectric Power Factor of Low Dimensional Silicon Nanowires"; Vortrag: European Conference on Thermoelectrics, Thessaloniki, Greece; 28.09.2011 - 30.09.2011; in: "Conference Proceedings of 9th European Conference on Thermoelectrics", (2011), 4 S. | |
| 1058. | Neophytou, N., Kosina, H.: "Thermoelectric Power Factor of Narrow Silicon Nanowires from Atomistic Considerations"; Vortrag: 30th International Conference on Thermoelectrics, Michigan, USA; 17.07.2011 - 21.07.2011; in: "Book of Abstracts", (2011), 1 S. | |
| 1057. | Neophytou, N., Kosina, H.: "Thermoelectric Properties of Ultra Narrow Silicon Nanowires from Atomistic Calculations"; Vortrag: APS March Meeting, Dallas, Texas; 21.03.2011 - 25.03.2011; in: "APS March Meeting 2011", (2011), 1 S. | |
| 1056. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: "Transport Gap Engineering in Zigzag Graphene Nanoribbons"; Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 21.11.2011 - 25.11.2011; in: "Poster Abstracts Book (TNT 2011)", (2011), S. 2. | |
| 1055. | Selberherr, S. (2011). Transport Modeling for Nanoscale Semiconductor Devices. IEEE EDS Mini-Colloquium Distinguished Lecture, Seaport Conference Center, Oranjestad, Aruba, Non-EU. (reposiTUm) | |
| 1054. | Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: "Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2011 - 10.06.2011; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), S. 64. | |
| 1053. | Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S.: "Transport Properties of Spin Field-Effect Transistors Built on Si and InAs"; Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 14.03.2011 - 16.03.2011; in: "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", IEEE, (2011), ISBN: 978-1-4577-0090-3; S. 210 - 213. https://doi.org/10.1109/ULIS.2011.5757998 | |
| 1052. | Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T.: "Understanding Temperature Acceleration for NBTI"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 05.12.2011 - 07.12.2011; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 S. https://doi.org/10.1109/IEDM.2011.6131623 | |
| 1051. | Reisinger, H., Grasser, T., Ermisch, K., Nielen, H., Gustin, W., Schlünder, C.: "Understanding and Modeling AC BTI"; Vortrag: International Reliability Physics Symposium (IRPS), Monterey; 12.04.2011 - 14.04.2011; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 S. | |
| 1050. | Bukhori, M. F., Grasser, T., Kaczer, B., Reisinger, H., Asenov, A.: "'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions"; Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 76 - 79. https://doi.org/10.1109/IIRW.2010.5706490 | |
| 1049. | Franco, J., Kaczer, B., Eneman, G., Mitard, J., Stesmans, A., Afanas´Ev, V., Kauerauf, T., Roussel, Ph. J., Toledano-Luque, M., Cho, M., Degraeve, R., Grasser, T., Ragnarsson, L., Witters, L., Tseng, J., Takeoka, S., Wang, W., Hoffmann, T. Y., Groeseneken, G.: "6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 06.12.2010 - 08.12.2010; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), S. 70 - 73. https://doi.org/10.1109/IEDM.2010.5703292 | |
| 1048. | Neophytou, N., Klimeck, G., Kosina, H.: "A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires"; Poster: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 93 - 96. https://doi.org/10.1109/IWCE.2010.5678007 | |
| 1047. | Weinbub, J., Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S.: "A Dispatched Covariant Type System for Numerical Applications in C++"; Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1663 - 1666. | |
| 1046. | Weinbub, J., Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S.: "A Lightweight Material Library for Scientific Computing in C++"; Vortrag: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; S. 454 - 458. | |
| 1045. | Rupp, K., Grasser, T., Jüngel, A.: "A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Vortrag: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in: "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9; S. 7 - 8. | |
| 1044. | Mach, G., Heinzl, R., Schwaha, P., Stimpfl, F., Weinbub, J., Selberherr, S.: "A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms"; Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1647 - 1650. | |
| 1043. | Makarov, A., Sverdlov, V., Selberherr, S.: "A Monte Carlo Simulation of Reproducible Hysteresis in RRAM"; Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 35 - 38. https://doi.org/10.1109/IWCE.2010.5677934 | |
| 1042. | Schlünder, C., Reisinger, H., Gustin, W., Grasser, T.: "A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery"; Vortrag: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 13.09.2010 - 15.09.2010; in: "GMM- Fachbericht", 66 (2010), S. 33 - 40. | |
| 1041. | Makarov, A., Sverdlov, V., Selberherr, S.: "A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; S. 396 - 399. | |
| 1040. | Stimpfl, F., Weinbub, J., Heinzl, R., Schwaha, P., Selberherr, S.: "A Unified Topological Layer for Finite Element Space Discretization"; Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; S. 1655 - 1658. | |
| 1039. | Schanovsky, F., Gös, W., Grasser, T.: "Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping"; Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 163 - 166. https://doi.org/10.1109/IWCE.2010.5677989 | |
| 1038. | Garcia-Barrientos, A., Palankovski, V., Grimalsky, V.: "Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films"; Vortrag: International Conference on Microelectronics (MIEL), Nis; 16.05.2010 - 19.05.2010; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0; S. 161 - 164. https://doi.org/10.1109/MIEL.2010.5490510 | |
| 1037. | Garcia-Barrientos, A., Palankovski, V.: "Amplification of Space Charge Waves in n-InP Films"; Vortrag: 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010), Chiapas, Mexico; 08.09.2010 - 10.09.2010; in: "Proceedings of the 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010)", IEEE, (2010), ISBN: 978-1-4244-7314-4; S. 613 - 616. https://doi.org/10.1109/ICEEE.2010.5608605 | |
| 1036. | Starkov, I., Tyaginov, S. E., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 139 - 144. | |
| 1035. | Neophytou, N., Wagner, M., Kosina, H.: "Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires"; Vortrag: 8th European Conference on Thermoelectrics (ECT 2010), Como; 22.09.2010 - 24.09.2010; in: "Note-Book of Abstracts", (2010), S. 30. | |
| 1034. | Neophytou, N., Kosina, H.: "Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires"; Vortrag: Annual March Meeting of the American Physical Society, Portland; 15.03.2010 - 19.03.2010; in: "Proceedings of the Annual March Meeting of the American Physical Society", (2010), S. 401. | |
| 1033. | Rupp, K., Weinbub, J., Rudolf, F.: "Automatic Performance Optimization in ViennaCL for GPUs"; Vortrag: Workshop on Parallel/High-Performance Object-Oriented Scientific Computing, Reno, Nevada, USA; 17.10.2010 - 21.10.2010; in: "Proceedings of the 9th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing", (2010), 6 S. https://doi.org/10.1145/2039312.2039318 | |
| 1032. | Dedyk, A., Pavlova, Y., Pakhomov, O. V., Starkov, A. S., Starkov, I., Semenov, A., Karmanenko, S.: "Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors"; Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 28.06.2010 - 30.06.2010; in: "Book of Abstracts WoDiM 2010", (2010), S. 93. | |
| 1031. | Gös, W., Schanovsky, F., Hehenberger, Ph., Wagner, P.-J., Grasser, T.: "Charge Trapping and the Negative Bias Temperature Instability"; Vortrag: 218th ECS Meeting, Las Vegas, USA; 10.10.2010 - 15.10.2010; in: "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0; 565 S. | |
| 1030. | Vainshtein, S., Yuferev, V., Kostamovaara, J., Palankovski, V.: "Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications"; Hauptvortrag: International Scientific and Applied Science Conference (ET), Sozopol, Bulgaria (eingeladen); 22.09.2009 - 24.09.2009; in: "Annual Journal of Electronics", Technical University of Sofia, 4 (2010), ISSN: 1313-1842; S. 12 - 17. | |
| 1029. | Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S.: "Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices"; Vortrag: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 01.08.2010 - 04.08.2010; in: "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), S. 273 - 274. | |
| 1028. | Pobegen, G., Aichinger, T., Nelhiebel, M., Grasser, T.: "Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness"; Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1073 - 1077. | |
| 1027. | Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Degraeve, R., Franco, J., Kauerauf, T., Grasser, T., Groeseneken, G.: "Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010. | |
| 1026. | Milovanovic, G., Baumgartner, O., Kosina, H.: "Design of a MIR QCL based on Intervalley Electron Transfer: A Monte Carlo Approach"; Poster: 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Shanghai; 05.09.2010 - 09.09.2010; in: "Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices", (2010), S. 140 - 141. | |
| 1025. | Rupp, K.: "Deterministic Numerical Solution of the Boltzmann Transport Equation"; Vortrag: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien, Austria (eingeladen); 03.11.2010 - 05.11.2010; in: "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), S. 7 - 8. | |
| 1024. | Huang, R., Robl, W., Dehm, G., Ceric, H., Detzel, T.: "Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 1 - 6. | |
| 1023. | Ceric, H., Orio, R., Selberherr, S.: "Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 167 - 170. | |
| 1022. | Vitanov, S., Palankovski, V.: "Electron Mobility Models for III-Nitrides"; Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 22.09.2010 - 24.09.2010; in: "Annual Journal of Electronics", (2010), ISSN: 1313-1842; S. 18 - 21. | |
| 1021. | Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H.: "Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding"; Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 5 - 8. https://doi.org/10.1109/IWCE.2010.5677927 | |
| 1020. | Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S.: "Enhanced Valley Splitting in Silicon Nanowires and Point Contacts"; Poster: Nanoelectronics Days 2010, Aachen, Germany; 04.10.2010 - 07.10.2010; in: "Abstract Book of the Nanoelectronics Days 2010", JARA-FIT, (2010), S. 118. | |
| 1019. | Neophytou, N., Kosina, H.: "Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model"; Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 21.02.2010 - 24.02.2010; in: "Nanostructured Thermoelectric Materials", (2010), 1 S. | |
| 1018. | Makarov, A., Weinbub, J., Sverdlov, V., Selberherr, S.: "First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory"; Vortrag: The European Simulation and Modelling Conference (ESM), Hasselt; 25.10.2010 - 27.10.2010; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; S. 181 - 186. | |
| 1017. | Gottschling, P., Heinzl, R., Weinbub, J., Kirchner, N., Sauer, M., Klomfass, A., Steinhardt, C., Wensch, J.: "Generic C++ Implementation of High-Performance BFS-RBF-based Mesh Motion Schemes"; Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; S. 1631 - 1634. | |
| 1016. | Starkov, I., Tyaginov, S. E., Enichlmair, H., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Ceric, H., Grasser, T.: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 128. | |
| 1015. | Vitanov, S., Palankovski, V.: "High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs"; Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 07.04.2010 - 09.04.2010; in: "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9; S. 59 - 60. | |
| 1014. | Schanovsky, F., Gös, W., Grasser, T.: "Hole Capture into Oxide Defects in MOS Structures from First Principles"; Poster: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in: "Abstract Book", (2010), S. 435. | |
| 1013. | Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 341 - 345. | |
| 1012. | Vitanov, S., Palankovski, V., Selberherr, S.: "Hydrodynamic Models for GaN-Based HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 S. | |
| 1011. | Aichinger, T., Puchner, S., Nelhiebel, M., Grasser, T., Hutter, H.: "Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress"; Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1063 - 1068. | |
| 1010. | Ceric, H., Orio, R., Selberherr, S.: "Impact of Parameter Variability on Electromigration Lifetime Distribution"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 217 - 220. https://doi.org/10.1109/SISPAD.2010.5604523 | |
| 1009. | Franco, J., Kaczer, B., Mitard, J., Eneman, G., Roussel, Ph. J., Crupi, F., Grasser, T., Witters, L., Hoffmann, T. Y., Groeseneken, G.: "Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 02.12.2010 - 04.12.2010. | |
| 1008. | Franco, J., Kaczer, B., Cho, M., Eneman, G., Groeseneken, G., Grasser, T.: "Improvements of NBTI Reliability in SiGe p-FETs"; Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 1082 - 1085. | |
| 1007. | Rupp, K.: "Increased Efficiency In Finite Element Computations Through Template Metaprogramming"; Vortrag: High Performance Computing Symposium (HPC), Orlando, FL, USA; 12.04.2010 - 15.04.2010; in: "Proceedings of the Spring Simulation Multiconference 2010", ACM, (2010), ISBN: 978-1-4503-0069-8; 1 S. https://doi.org/10.1145/1878537.1878633 | |
| 1006. | Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 11.10.2010 - 15.10.2010; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 S. | |
| 1005. | Sverdlov, V., Baumgartner, O., Selberherr, S.: "Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films"; Vortrag: APS March Meeting, Portland; 15.03.2010 - 19.03.2010; in: "Bulletin American Physical Society (APS March Meeting 2010)", 49/2 (2010), S. B9.00001. | |
| 1004. | Schwaha, P., Heinzl, R.: "Marching Simplices"; Vortrag: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 19.09.2010 - 25.09.2010; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; S. 1651 - 1654. | |
| 1003. | Pourfath, M., Sverdlov, V., Selberherr, S.: "Modeling Demands for Nanoscale Devices"; Vortrag: Device Research Conference, South Bend (eingeladen); 21.06.2010 - 23.06.2010; in: "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5; S. 211 - 214. | |
| 1002. | Sverdlov, V., Selberherr, S.: "Modeling Floating Body Z-RAM Storage Cells"; Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 16.05.2010 - 19.05.2010; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0; S. 45 - 50. https://doi.org/10.1109/MIEL.2010.5490533 | |
| 1001. | Sverdlov, V., Selberherr, S.: "Modeling of Modern MOSFETs with Strain"; Vortrag: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina (eingeladen); 01.11.2010 - 03.11.2010; in: "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3; S. 1 - 11. | |
| 1000. | Makarov, A., Sverdlov, V., Selberherr, S.: "Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 141. | |
| 999. | Huang, R., Robl, W., Detzel, T., Ceric, H.: "Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing"; Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 02.05.2010 - 06.05.2010; in: "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; S. 911 - 917. | |
| 998. | Makarov, A., Sverdlov, V., Selberherr, S.: "Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations"; Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), S. B-39. | |
| 997. | Makarov, A., Sverdlov, V., Selberherr, S.: "Monte Carlo Simulation of Bipolar Resistive Switching Memories"; Vortrag: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in: "Proceedings of the Nanoelectronics Days 2010", (2010), S. 22. | |
| 996. | Schanovsky, F., Gös, W., Grasser, T.: "Mulit-Phonon Hole-Trapping from First-Principles"; Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 54. | |
| 995. | Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.: "Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 S. | |
| 994. | Grasser, T., Aichinger, T., Reisinger, H., Franco, J., Wagner, P.-J., Nelhiebel, M., Ortolland, C., Kaczer, B.: "On the 'Permanent' Component of NBTI"; Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 2 - 7. https://doi.org/10.1109/IIRW.2010.5706472 | |
| 993. | Pourfath, M., Yazdanpanah Goharrizi, A., Fathipour, M., Kosina, H.: "On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs"; Vortrag: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 26.10.2010 - 29.10.2010; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; S. 45 - 48. https://doi.org/10.1109/IWCE.2010.5677936 | |
| 992. | Kaczer, B., Grasser, T., Roussel, Ph. J., Franco, J., Degraeve, R., Ragnarsson, L., Simoen, E., Groeseneken, G., Reisinger, H.: "Origin of NBTI Variability in Deeply Scaled pFETs"; Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 26 - 32. | |
| 991. | Wagner, P.-J., Grasser, T., Reisinger, H., Kaczer, B.: "Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 134 - 138. | |
| 990. | Kosina, H.: "Quantum Cascade Laser Modeling based on the Pauli Master Equation"; Vortrag: Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS, Wien (eingeladen); 03.11.2010 - 05.11.2010; in: "Proceedings of the Austrian-Chinese Workshop on DISSIPATIVE SYSTEMS: KINETIC THEORY AND SEMICONDUCTOR APPLICATIONS", (2010), S. 6. | |
| 989. | Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, Ph., Wagner, P.-J., Schanovsky, F., Franco, J., Roussel, Ph. J., Nelhiebel, M.: "Recent Advances in Understanding the Bias Temperature Instability"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 06.12.2010 - 08.12.2010; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), S. 82 - 85. https://doi.org/10.1109/IEDM.2010.5703295 | |
| 988. | Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Groeseneken, G.: "Recent Trends in Bias Temperature Instability"; Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava (eingeladen); 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 55. | |
| 987. | Hehenberger, Ph., Reisinger, H., Grasser, T.: "Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs"; Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 8 - 11. https://doi.org/10.1109/IIRW.2010.5706473 | |
| 986. | Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H.: "Recovery-Free Electron Spin Resonance Observations of NBTI Degradation"; Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 43 - 49. | |
| 985. | Poschalko, C., Selberherr, S.: "Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables"; Vortrag: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 12.04.2010 - 16.04.2010; in: "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9; S. 1102 - 1105. | |
| 984. | Sverdlov, V., Selberherr, S.: "Scalability of a Second Generation Z-RAM Cell: A Computational Study"; Vortrag: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 28.03.2010 - 01.04.2010; in: "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9; S. 232 - 247. | |
| 983. | Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S.: "Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 05.12.2010 - 10.12.2010; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), S. TH-06. | |
| 982. | Nedjalkov, M., Selberherr, S., Dimov, I.: "Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation"; Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2010 - 24.08.2010; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), S. B-43. | |
| 981. | Makarov, A., Sverdlov, V., Selberherr, S.: "Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 237 - 240. https://doi.org/10.1109/SISPAD.2010.5604517 | |
| 980. | Makarov, A., Sverdlov, V., Selberherr, S.: "Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 05.07.2010 - 09.07.2010; in: "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; S. 309 - 312. | |
| 979. | Sverdlov, V., Selberherr, S.: "Strain Engineering Techniques: A Rigorous Physical Review"; Vortrag: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona (eingeladen); 05.12.2010 - 10.12.2010; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), S. TH-05. | |
| 978. | Baumgartner, O., Sverdlov, V., Kosina, H., Selberherr, S.: "Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 25.01.2010 - 27.01.2010; in: "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), S. 91 - 92. | |
| 977. | Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Miglio, L.: "Strained MOSFETs on Ordered SiGe Dots"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Sevilla; 14.09.2010 - 16.09.2010; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; S. 297 - 300. | |
| 976. | Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H.: "Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model"; Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 18.03.2010 - 19.03.2010; in: "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), S. 69 - 72. | |
| 975. | Rupp, K.: "Symbolic Integration at Compile Time in Finite Element Methods"; Vortrag: International Symposium on Symbolic and Algebraic Computation (ISSAC), Munich; 25.07.2010 - 28.07.2010; in: "Proceedings of the 2010 International Symposium on Symbolic and Algebraic Computation", (2010), S. 347 - 354. | |
| 974. | Rupp, K., Grasser, T., Jüngel, A.: "System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; S. 159 - 162. https://doi.org/10.1109/SISPAD.2010.5604542 | |
| 973. | Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Grasser, T., Groeseneken, G.: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 28.06.2010 - 30.06.2010; in: "Book of Abstracts", (2010), S. 28. | |
| 972. | Pourfath, M., Yazdanpanah Goharrizi, A., Kosina, H.: "The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons"; Vortrag: Ψk - 2010 Conference, Berlin; 12.09.2010 - 16.09.2010; in: "Abstract Book", (2010), S. 419. | |
| 971. | Reisinger, H., Grasser, T., Hofmann, K., Gustin, W., Schlünder, C.: "The Impact of Recovery on BTI Reliability Assessments"; Vortrag: IEEE International Integrated Reliability Workshop, California; 17.10.2010 - 21.10.2010; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), S. 12 - 16. https://doi.org/10.1109/IIRW.2010.5706474 | |
| 970. | Reisinger, H., Grasser, T., Schlunder, C., Gustin, W.: "The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress"; Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 7 - 15. | |
| 969. | Grasser, T., Reisinger, H., Wagner, P., Kaczer, B., Schanovsky, F., Gös, W.: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Vortrag: International Reliability Physics Symposium (IRPS), Anaheim; 02.05.2010 - 06.05.2010; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0; S. 16 - 25. | |
| 968. | Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: "Thermal Properties of Graphene Antidots"; Poster: Nanoelectronics Days 2010, Aachen; 04.10.2010 - 07.10.2010; in: "Abstract Book of the Nanoelectronics Days 2010", (2010), S. 102. | |
| 967. | Neophytou, N., Kosina, H.: "Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model"; Vortrag: 29th International Conference on Thermoelectrics, Shanghai; 30.05.2010 - 03.06.2010; in: "Proceedings of the 29th International Conference on Thermoelectrics", (2010), S. 71. | |
| 966. | Ertl, O., Filipovic, L., Selberherr, S.: "Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 06.09.2010 - 08.09.2010; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7700-5; S. 49 - 52. https://doi.org/10.1109/SISPAD.2010.5604573 | |
| 965. | Pourfath, M., Sverdlov, V., Selberherr, S.: "Transport Modeling for Nanoscale Semiconductor Devices"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai (eingeladen); 01.11.2010 - 04.11.2010; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", 4 (2010), ISBN: 978-1-4244-5799-1; S. 1737 - 1740. | |
| 964. | Rupp, K., Rudolf, F., Weinbub, J.: "ViennaCL - A High Level Linear Algebra Library for GPUs and Multi-Core CPUs"; Vortrag: International Workshop on GPUs and Scientific Applications (GPUScA 2010), Vienna; 11.09.2010; in: "Proceedings of the International Workshop on GPUs and Scientific Applications (GPUScA 2010)", (2010), S. 51 - 56. | |
| 963. | Weinbub, J., Rupp, K., Selberherr, S.: "ViennaIPD - An Input Control Language for Scientific Computing"; Vortrag: Industrial Simulation Conference (ISC), Budapest; 07.06.2010 - 09.06.2010; in: "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57; S. 34 - 38. | |
| 962. | Ertl, O., Selberherr, S.: "A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 174 - 177. https://doi.org/10.1109/SISPAD.2009.5290221 | |
| 961. | Sonderfeld, R., Heinzl, R.: "A Generic and Self-Optimizing Polynomial Library"; Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. | |
| 960. | Gös, W., Grasser, T., Karner, M., Kaczer, B.: "A Model for Switching Traps in Amorphous Oxides"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 159 - 162. https://doi.org/10.1109/SISPAD.2009.5290226 | |
| 959. | Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.: "A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates"; Vortrag: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 02.11.2009 - 04.11.2009; in: "HETECH 2009 Book of Abstracts", (2009), S. 109 - 110. | |
| 958. | Reisinger, H., Grasser, T., Schlünder, C.: "A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS"; Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 30 - 35. | |
| 957. | Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, Ph., Nelhiebel, M.: "A Two-Stage Model for Negative Bias Temperature Instability"; Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 33 - 44. | |
| 956. | Vasicek, M.: "Advanced Macroscopic Transport Models"; Vortrag: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (eingeladen); 20.04.2009 - 24.04.2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), S. 32. | |
| 955. | Neophytou, N., Wagner, M., Kosina, H., Selberherr, S.: "Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model"; Vortrag: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 26.07.2009 - 30.07.2009; in: "Book of Abstracts", (2009), S. 91. | |
| 954. | Bindu, B., Gös, W., Kaczer, B., Grasser, T.: "Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress"; Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 93 - 96. | |
| 953. | Pourfath, M., Kosina, H.: "Carbon Based Electronics: A Computational Study"; Vortrag: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing (eingeladen); 20.04.2009 - 24.04.2009; in: "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), S. 18. | |
| 952. | Pourfath, M., Selberherr, S.: "Carbon-Based Electronics: A Computational Study"; Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi (eingeladen); 15.12.2009 - 19.12.2009; in: "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009), 6 S. | |
| 951. | Schwaha, P., Baumgartner, O., Heinzl, R., Nedjalkov, M., Selberherr, S., Dimov, I.: "Classical Approximation of the Scattering Induced Wigner Correction Equation"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 177 - 180. https://doi.org/10.1109/IWCE.2009.5091092 | |
| 950. | Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T.: "Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Athens; 14.09.2009 - 18.09.2009; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2009), ISBN: 978-1-4244-4351-2; S. 311 - 314. | |
| 949. | Schwaha, P., Cervenka, J., Nedjalkov, M., Gurov, T., Arsov, G., Misev, A., Zoric, A., Ilic, S.: "Computational Electronics on GRID: A Mixed Mode Carrier Transport Model"; Vortrag: International Conference On Applications Of Mathematics In Technical And Natural Sciences, Sozopol (Bulgaria); 22.06.2009 - 27.06.2009; in: "1st International Conference On Applications Of Mathematics In Technical And Natural Sciences", 1186 (2009), ISBN: 978-0-7354-0752-7; S. 206 - 214. https://doi.org/10.1063/1.3265331 | |
| 948. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: "Copper Microstructure Impact on Evolution of Electromigration Induced Voids"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 178 - 181. https://doi.org/10.1109/SISPAD.2009.5290222 | |
| 947. | Grasser, T., Kaczer, B.: "Critical Modeling Issues in Negative Bias Temperature Instability"; Vortrag: 215th ECS Meeting, San Francisco (eingeladen); 24.05.2009 - 29.05.2009; in: "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213; S. 793. | |
| 946. | Heinzl, R.: "Data Structure Properties for Scientific Computing: An Algebraic Topology Library"; Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. | |
| 945. | Neophytou, N., Kosina, H., Selberherr, S., Klimeck, G.: "Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 71 - 74. https://doi.org/10.1109/SISPAD.2009.5290245 | |
| 944. | Tyaginov, S. E., Gös, W., Grasser, T., Sverdlov, V., Schwaha, P., Heinzl, R., Stimpfl, F.: "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal"; Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 514 - 522. | |
| 943. | Hehenberger, Ph., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M.: "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique"; Poster: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 1033 - 1038. | |
| 942. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: "Electromigration Failure Development in Modern Dual-Damascene Interconnects"; Vortrag: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 15 (2009), ISBN: 978-3-90188-237-1; 5 S. | |
| 941. | Sverdlov, V., Windbacher, T., Baumgartner, O., Selberherr, S.: "Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in: "EUROSOI 2009 Conference Proceedings", (2009), S. 81 - 82. | |
| 940. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovski, F., Selberherr, S.: "Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 07.07.2009 - 11.07.2009; in: "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), S. 301. | |
| 939. | Starkov, I., Tyaginov, S. E., Grasser, T.: "Green´s Function Asymptotic in Two-Layered Periodic Medium"; Vortrag: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), S. 111 - 112. | |
| 938. | Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 09.12.2009 - 11.12.2009; in: "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1; 2 S. https://doi.org/10.1109/ISDRS.2009.5378300 | |
| 937. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S.: "Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 389 - 396. | |
| 936. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S.: "Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance"; Vortrag: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco (eingeladen); 24.05.2009 - 29.05.2009; in: "215th ECS Meeting", 19/4 (2009), ISBN: 978-1-56677-712-4; S. 15 - 26. | |
| 935. | Tyaginov, S. E., Sverdlov, V., Gös, W., Grasser, T.: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009). | |
| 934. | Tyaginov, S. E., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T.: "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics"; Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 13.04.2009 - 17.04.2009; in: "Proceedings of the 2009 MRS Spring Meeting", (2009). | |
| 933. | Vitanov, S., Palankovski, V.: "Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs"; Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 14.09.2009 - 17.09.2009; in: "Annual Journal of Electronics", (2009), ISSN: 1313-1842; S. 144 - 147. | |
| 932. | Pourfath, M., Selberherr, S.: "Modeling Optical Sensors Based on Carbon Nanotubes"; Vortrag: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi (eingeladen); 16.12.2009 - 19.12.2009; in: "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), S. 1381 - 1384. | |
| 931. | Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S.: "Modeling Techniques for Strained CMOS Technology"; Vortrag: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna (eingeladen); 04.10.2009 - 09.10.2009; in: "216th ECS Meeting", (2009), ISBN: 978-1-56677-744-5; S. 3 - 18. | |
| 930. | Windbacher, T., Sverdlov, V., Selberherr, S.: "Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 169 - 172. https://doi.org/10.1109/IWCE.2009.5091122 | |
| 929. | Kaczer, B., Grasser, T., Martin-Martinez, J., Simoen, E., Aoulaiche, M., Roussel, Ph. J., Groeseneken, G.: "NBTI from the Perspective of Defect States with Widely Distributed Time Scales"; Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 55 - 60. | |
| 928. | Milovanovic, G., Kosina, H.: "Nonparabolicity Effects in Quantum Cascade Lasers"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 189 - 192. https://doi.org/10.1109/IWCE.2009.5091129 | |
| 927. | Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H.: "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices"; Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 53 - 56. https://doi.org/10.1109/IWCE.2009.5091131 | |
| 926. | Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H.: "Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices"; Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 19.01.2009 - 21.01.2009; in: "EUROSOI 2009 Conference Proceedings", (2009), S. 57 - 58. | |
| 925. | Aichinger, T., Nelhiebel, M., Grasser, T.: "On the Temperature Dependence of NBTI Recovery"; Vortrag: International Reliability Physics Symposium (IRPS), Montreal (eingeladen); 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 1. | |
| 924. | Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T.: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 05.10.2009 - 09.10.2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 S. | |
| 923. | Southwick III, R., Knowlton, B., Kaczer, B., Grasser, T.: "On the Thermal Activation of Negative Bias Temperature Instability"; Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 36 - 41. | |
| 922. | Nedjalkov, M., Schwaha, P., Baumgartner, O., Selberherr, S.: "Particle Model of the Scattering-Induced Wigner Function Correction"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in: "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), S. 79. | |
| 921. | Pourfath, M., Baumgartner, O., Kosina, H., Selberherr, S.: "Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors"; Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; S. 13 - 14. | |
| 920. | Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S.: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films"; Vortrag: 2009 Silicon Nanoelectronics Workshop, Kyoto; 13.06.2009 - 14.06.2009; in: "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), S. 95 - 96. | |
| 919. | Wagner, P.-J., Aichinger, T., Grasser, T., Nelhiebel, M., Vandamme, L.K.J.: "Possible Correlation between Flicker Noise and Bias Temperature Stress"; Vortrag: International Conference on Noise and Fluctuations (ICNF), Pisa; 14.06.2009 - 19.06.2009; in: "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), S. 621 - 624. | |
| 918. | Neophytou, N., Kosina, H., Rakshit, T.: "Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 161 - 164. https://doi.org/10.1109/IWCE.2009.5091141 | |
| 917. | Sverdlov, V., Selberherr, S.: "Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach"; Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 12.10.2009 - 14.10.2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 21 (2009), ISBN: 978-3-90188-237-1; 4 S. | |
| 916. | Tyaginov, S. E., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T.: "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal"; Vortrag: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 19.03.2009 - 20.03.2009; in: "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), S. 84. | |
| 915. | Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S.: "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 14.06.2009 - 19.06.2009; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), S. 58. | |
| 914. | Milovanovic, G., Baumgartner, O., Kosina, H.: "Simulation of Quantum Cascade Lasers using Robin Boundary Conditions"; Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 14.09.2009 - 17.09.2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; S. 7 - 8. | |
| 913. | Tyaginov, S. E., Sverdlov, V., Gös, W., Grasser, T.: "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations"; Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 29 - 32. https://doi.org/10.1109/IWCE.2009.5091156 | |
| 912. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: "Study of the Properties of Biotin-Streptavidin Sensitive BioFETs"; Vortrag: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 14.01.2009 - 17.01.2009; in: "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2; S. 24 - 30. | |
| 911. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: "Study of the Properties of Biotin-Streptavidin Sensitive Biofets"; Vortrag: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 14.01.2009 - 17.01.2009; in: "Final Program and Book of Abstracts", (2009), S. 42. | |
| 910. | Sverdlov, V., Baumgartner, O., Selberherr, S.: "Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), College Park; 09.12.2009 - 11.12.2009; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1; S. TP6-03.1 - 2. | |
| 909. | Sverdlov, V., Baumgartner, O., Tyaginov, S. E., Windbacher, T., Selberherr, S.: "Subband Structure in Ultra-Thin Silicon Films"; Vortrag: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 22.06.2009 - 26.06.2009; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), S. 62 - 63. | |
| 908. | Grasser, T., Reisinger, H., Gös, W., Aichinger, T., Hehenberger, Ph., Wagner, P.-J., Nelhiebel, M., Franco, J., Kaczer, B.: "Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 07.12.2009 - 09.12.2009; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2009), S. 1 - 4. https://doi.org/10.1109/IEDM.2009.5424235 | |
| 907. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: "The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 182 - 185. https://doi.org/10.1109/SISPAD.2009.5290219 | |
| 906. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: "The Effect of Microstructure on Electromigration Induced Voids"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6; S. 694 - 697. | |
| 905. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: "The Effect of Microstructure on Electromigration-Induced Failure Development"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 345 - 352. | |
| 904. | Orio, R., Ceric, H., Cervenka, J., Selberherr, S.: "The Effect of Microstructure on the Electromigration Lifetime Distribution"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 06.07.2009 - 10.07.2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), S. 731 - 734. | |
| 903. | Schwaha, P., Heinzl, R., Nedjalkov, M.: "The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example"; Vortrag: European Conference on Object-Oriented Programming, Genova; 07.07.2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. | |
| 902. | Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., Esseni, D.: "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers"; Vortrag: International Workshop on Computational Electronics (IWCE), Beijing, China; 27.05.2009 - 29.05.2009; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; S. 49 - 52. https://doi.org/10.1109/IWCE.2009.5091158 | |
| 901. | Pourfath, M., Kosina, H., Selberherr, S.: "Theoretical Study of Graphene Nanoribbon Photo-Detectors"; Vortrag: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 30.11.2009 - 04.12.2009; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), S. 178 - 179. | |
| 900. | Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S.: "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 09.09.2009 - 11.09.2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; S. 51 - 54. https://doi.org/10.1109/SISPAD.2009.5290252 | |
| 899. | Ertl, O., Selberherr, S.: "Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 31.08.2009 - 03.09.2009; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; S. 61 - 68. | |
| 898. | Kosina, H.: "Transport Modeling for Nanowires and Nanotubes"; Vortrag: Final FoNE Conference, Miraflores de la Sierra, Madrid; 09.09.2009 - 13.09.2009; in: "Proceedings of the Final FoNE Conference", (2009), S. 35. | |
| 897. | Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S.: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2009 - 08.06.2009; in: "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), S. 93. | |
| 896. | Aichinger, T., Nelhiebel, M., Grasser, T.: "Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes"; Vortrag: International Reliability Physics Symposium (IRPS), Montreal; 26.04.2009 - 30.04.2009; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), S. 2 - 7. | |
| 895. | Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., Selberherr, S.: "Valley Splitting in Thin Silicon Films from a Two-Band k·p Model"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 18.03.2009 - 20.03.2009; in: "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), S. 277 - 280. | |
| 894. | Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H.: "What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach"; Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 18.10.2009 - 22.10.2009; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8; S. 42 - 45. | |
| 893. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: "A Delaunay Mesh Generation Approach without the Use of Convex Hulls"; Vortrag: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in: "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 S. | |
| 892. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C.: "A General Bottom-Up Modeling Approach for BioFETs"; Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 29.09.2008 - 30.09.2008; in: "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008). | |
| 891. | Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S.: "A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes"; Vortrag: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 17.11.2008 - 19.11.2008; in: "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), S. 66 - 67. | |
| 890. | Schwaha, P., Stimpfl, F., Heinzl, R., Selberherr, S.: "A Parallel Delaunay and Advancing Front Mesh Generation Approach"; Vortrag: Intl. Conf. on Numerical Geometry, Grid Generation and Scientific Computing (Numgrid), Moscow, Russia; 10.06.2008 - 13.06.2008; in: "Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing", (2008), 2 S. | |
| 889. | Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S.: "A Parallel Generic Scientific Simulation Environment"; Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008). | |
| 888. | Gös, W., Karner, M., Sverdlov, V., Grasser, T.: "A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in: "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1; S. 249 - 254. | |
| 887. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: "A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 265 - 268. https://doi.org/10.1109/SISPAD.2008.4648288 | |
| 886. | Grasser, T., Kaczer, B., Gös, W.: "An Energy-Level Perspective of Bias Temperature Instability"; Vortrag: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht (eingeladen); 29.09.2008 - 02.10.2008; in: "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008). | |
| 885. | Grasser, T., Kaczer, B., Gös, W.: "An Energy-Level Perspective of Bias Temperature Instability"; Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), S. 28 - 38. | |
| 884. | Pourfath, M., Selberherr, S.: "Analysis of Carbon Nanotube Photo-Detectors"; Vortrag: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (eingeladen); 07.12.2008 - 12.12.2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), S. TU-06. | |
| 883. | Orio, R., Carniello, S., Ceric, H., Selberherr, S.: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in: "ECS Transactions", (2008), ISBN: 978-1-56677-646-2; S. 337 - 348. | |
| 882. | Orio, R., Ceric, H., Carniello, S., Selberherr, S.: "Analysis of Electromigration in Redundant Vias"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 237 - 240. https://doi.org/10.1109/SISPAD.2008.4648281 | |
| 881. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: "Analysis of Microstructure Impact on Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 241 - 244. https://doi.org/10.1109/SISPAD.2008.4648282 | |
| 880. | Poschalko, C., Selberherr, S.: "Calculation of the Radiation from the Slot of a Slim Enclosure with a Cavity Resonator Model"; Vortrag: International Zurich Symposium on Electromagnetic Compatibility, Singapore; 19.05.2008 - 22.05.2008; in: "19th International Zurich Symposium on Electromagnetic Compatibility,", (2008), S. 634 - 637. | |
| 879. | Ceric, H., Orio, R., Selberherr, S.: "Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms"; Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 11.05.2008 - 14.05.2008; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2008), ISBN: 978-1-4244-1881-7; S. 69 - 76. https://doi.org/10.1109/ICMEL.2008.4559225 | |
| 878. | Vasicek, M., Cervenka, J., Karner, M., Grasser, T.: "Consistent Higher-Order Transport Models for SOI MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 129 - 132. https://doi.org/10.1109/SISPAD.2008.4648254 | |
| 877. | Baumgartner, O., Schwaha, P., Karner, M., Nedjalkov, M., Selberherr, S.: "Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 345 - 348. https://doi.org/10.1109/SISPAD.2008.4648308 | |
| 876. | Pourfath, M., Kosina, H., Selberherr, S.: "Current Transport in Carbon Nanotube Transistors"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (eingeladen); 20.10.2008 - 23.10.2008; in: "The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2; S. 361 - 364. | |
| 875. | Pourfath, M., Selberherr, S.: "Current Transport in Carbon Nanotube Transistors"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Cancun (eingeladen); 28.04.2008 - 30.04.2008; in: "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems", (2008), ISBN: 978-1-4244-1957-9; 6 S. | |
| 874. | Grasser, T., Kaczer, B., Aichinger, T., Gös, W., Nelhiebel, M.: "Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks"; Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), S. 91 - 95. | |
| 873. | Poschalko, C., Selberherr, S.: "Domain Separation with Port Interfaces for Calculation of Emissions from Enclosure Slots"; Vortrag: International Symposium on Electromagnetic Compatibility (EMC), Detroit; 18.08.2008 - 22.08.2008; in: "Proceedings International Symposium on Electromagnetic Compatibility", 1113 (2008), ISBN: 978-1-4244-1699-8. https://doi.org/10.1109/ISEMC.2008.4652083 | |
| 872. | Tyaginov, S. E., Vexler, M., El Hdiy, A., Gacem, K., Zaporojtchenko, V.: "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 23.06.2008 - 25.06.2008; in: "15th Workshop on Dielectrics in Microelectronics", (2008), S. 227 - 228. | |
| 871. | Sverdlov, V., Kosina, H., Selberherr, S.: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond"; Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 23.01.2008 - 25.01.2008; in: "Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), S. 41 - 42. | |
| 870. | Vitanov, S., Palankovski, V.: "Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation"; Vortrag: Junior Scientist Conference 2008, Technische Universität Wien; 17.11.2008 - 18.11.2008; in: "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5; S. 221 - 222. | |
| 869. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: "High Performance Parallel Mesh Generation and Adaption"; Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008). | |
| 868. | Gös, W., Karner, M., Tyaginov, S. E., Hehenberger, Ph., Grasser, T.: "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 69 - 72. https://doi.org/10.1109/SISPAD.2008.4648239 | |
| 867. | Sverdlov, V., Windbacher, T., Selberherr, S.: "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 145 - 148. https://doi.org/10.1109/SISPAD.2008.4648258 | |
| 866. | Sverdlov, V., Selberherr, S.: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 01.09.2008 - 04.09.2008; in: "ECS Transactions", (2008), ISBN: 978-1-56677-646-2; S. 159 - 168. | |
| 865. | Grasser, T., Gös, W., Kaczer, B.: "Modeling Bias Temperature Instability During Stress and Recovery"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 65 - 68. https://doi.org/10.1109/SISPAD.2008.4648238 | |
| 864. | Pourfath, M., Selberherr, S.: "Modeling Current Transport in Carbon Nanotube Transistors"; Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 08.12.2008 - 10.12.2008; in: "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2; 6 S. | |
| 863. | Sverdlov, V., Selberherr, S.: "Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells"; Vortrag: European Simulation and Modeling Conference (ESMC), Le Havre; 27.10.2008 - 29.10.2008; in: "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1; S. 380 - 384. | |
| 862. | Baumgartner, O., Karner, M., Kosina, H.: "Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green´s Function Formalism"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 353 - 356. https://doi.org/10.1109/SISPAD.2008.4648310 | |
| 861. | Sverdlov, V., Ungersboeck, E., Kosina, H. (2008). Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering. In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 157–164), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_16 (reposiTUm) | |
| 860. | Grasser, T.: "Negative Bias Temperature Instability: Modeling Challenges and Perspectives"; Vortrag: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 27.04.2008 - 01.05.2008; in: "2008 Reliability Physics Tutorial Notes", (2008), S. 113 - 120. | |
| 859. | Palankovski, V.: "Novel High-Performance GaN Transistors"; Vortrag: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona (eingeladen); 07.12.2008 - 12.12.2008; in: "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), S. MO-03. | |
| 858. | Pourfath, M., Kosina, H.: "Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 81 - 84. https://doi.org/10.1109/SISPAD.2008.4648242 | |
| 857. | Pourfath, M., Baumgartner, O., Kosina, H.: "On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors"; Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 01.09.2008 - 04.09.2008; in: "Proceedings of the 8^{th} International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1; S. 99 - 100. https://doi.org/10.1109/NUSOD.2008.4668261 | |
| 856. | Pourfath, M., Sverdlov, V., Kosina, H.: "On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors"; Vortrag: 1st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 29.06.2008 - 03.07.2008; in: "1st Fone Conference Nanoelectronics 2008", (2008), S. 41. | |
| 855. | Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S.: "Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment"; Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 5 S. | |
| 854. | Poschalko, C., Selberherr, S.: "Radiated Emission from the Slot of a Slim Cubical Enclosure with Multiple Sources Inside"; Vortrag: International Symposium on Electromagnetic Compatibility (EMC), Hamburg; 08.09.2008 - 12.09.2008; in: "Proceedings of the 8th International Symposium on Electromagnetic Compatibility", (2008), ISBN: 978-3-930400-60-7; S. 109 - 114. | |
| 853. | Pourfath, M., Kosina, H., Selberherr, S.: "Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 15.09.2008 - 19.09.2008; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2008), S. 214 - 217. | |
| 852. | Vitanov, S., Palankovski, V.: "Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer"; Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 24.09.2008 - 26.09.2008; in: "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842; S. 67 - 70. | |
| 851. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: "Simulation of Field-Effect Biosensors (BioFETs)"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 193 - 196. https://doi.org/10.1109/SISPAD.2008.4648270 | |
| 850. | Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, Ch.: "Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes"; Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 27.07.2008 - 01.08.2008; in: "PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7; S. 507 - 508. | |
| 849. | Sverdlov, V., Selberherr, S.: "Strain-Controlled Valley Splitting in Si-SiGe Heterostructures"; Vortrag: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in: "Abstract Book", (2008), S. 20 - 21. | |
| 848. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: "Stress-Induced Anisotropy of Electromigration in Copper Interconnects"; Vortrag: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 05.11.2008 - 07.11.2008; in: "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3; S. 56 - 62. | |
| 847. | Sverdlov, V., Windbacher, T., Kosina, H., Selberherr, S.: "Stress-Induced Valley Splitting in Silicon Thin Films"; Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 12.03.2008 - 14.03.2008; in: "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8; S. 93 - 96. | |
| 846. | Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S.: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages"; Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Trondheim; 13.05.2008 - 16.05.2008; in: "Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing", (2008). | |
| 845. | Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S.: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications"; Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Paphos; 08.07.2008; in: "7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08)", (2008), 6 S. | |
| 844. | Vitanov, S., Palankovski, V., Pozzovivo, G., Kuzmik, J., Quay, R.: "Systematical Study of InAlN/GaN Devices by Numerical Simulation"; Vortrag: European Workshop on Heterostructure Technology, Venice; 03.11.2008 - 05.11.2008; in: "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3; S. 159 - 160. | |
| 843. | Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: "TCAD Solutions for Submicron Copper Interconnect"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07.07.2008 - 11.07.2008; in: "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1; S. 78 - 81. | |
| 842. | Reisinger, H., Vollertsen, R., Wagner, P.-J., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C.: "The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides"; Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 18.10.2008 - 22.10.2008; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), S. 1 - 6. | |
| 841. | Ertl, O., Selberherr, S.: "Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 09.09.2008 - 11.09.2008; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; S. 325 - 328. https://doi.org/10.1109/SISPAD.2008.4648303 | |
| 840. | Grasser, T.: "Towards Understanding Negative Bias Temperature Instability"; in: "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", IEEE Conference Proceedings, 2008, S. 145. https://doi.org/10.1109/IRWS.2008.4796110 | |
| 839. | Vitanov, S., Vitanov, P., Palankovski, V.: "Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon"; Poster: European Photovoltaic Solar Energy Conference, Valencia; 01.09.2008 - 05.09.2008; in: "23rd European Photovoltaic Solar Energy Conference", (2008), S. 1743 - 1745. | |
| 838. | Kaczer, B., Grasser, T., Roussel, Ph. J., Martin-Martinez, J., O´Connor, R., O´Sullivan, B., Groeseneken, G.: "Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights"; Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 27.04.2008 - 01.05.2008; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), S. 20 - 27. | |
| 837. | Okhonin, S., Nagoga, M., Lee, C., Colinge, J., Afzalian, A., Yan, R., Akhavan, N., Xiong, W., Sverdlov, V., Selberherr, S., Mazure, C.: "Ultra-Scaled Z-RAM Cell"; Vortrag: 2008 IEEE International SOI Conference, New Paltz; 06.10.2008 - 09.10.2008; in: "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8; S. 157 - 158. | |
| 836. | Milovanovic, G., Kosina, H.: "Valence Band Deformation Potentials in Semiconductors"; Poster: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 11.05.2008 - 14.05.2008; in: "Abstract Book", (2008), S. 215 - 216. | |
| 835. | Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T.: "A 2D-Non-Parabolic Six Moments Model"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 834. | Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S.: "A High Performance Webapplication for an Electro-Biological Problem"; Vortrag: 21st European Conference on Modelling and Simulation, Prag; 04.06.2007 - 06.06.2007; in: "Proceedings 21st European Conference on Modelling and Simulation", (2007), ISBN: 978-0-9553018-2-7; S. 218 - 222. https://doi.org/10.7148/2007-0218 | |
| 833. | Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S.: "A Multi-Mode Mesh Generation Approach for Scientific Computing"; Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 506 - 513. | |
| 832. | Heinzl, R., Mach, G., Schwaha, P., Selberherr, S.: "A Performance Test Platform"; Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 483 - 487. | |
| 831. | Grasser, T., Wagner, P.-J., Hehenberger, Ph., Gös, W., Kaczer, B.: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8; S. 6 - 11. | |
| 830. | Baumgartner, O., Karner, M., Holzer, S., Pourfath, M., Grasser, T., Kosina, H.: "Adaptive Energy Integration of Non-Equilibrium Green´s Functions"; Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 19.05.2007 - 24.05.2007; in: "NSTI Nanotech Proceedings", 3 (2007), ISBN: 1-4200-6184-4; S. 145 - 148. | |
| 829. | Kosina, H., Triebl, O., Grasser, T.: "Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 317 - 320. https://doi.org/10.1007/978-3-211-72861-1_76 | |
| 828. | Li, L., Meller, G., Kosina, H.: "Charge Injection Model for Organic Light-Emitting Diodes"; Vortrag: International Conference on Organic Electronics (ICOE), Eindhoven; 04.06.2007 - 07.06.2007; in: "International Conference on Organic Electronics", (2007). | |
| 827. | Li, L., Meller, G., Kosina, H.: "Charge Injection Model in Organic Light-Emitting Diodes based on a Master Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 377 - 380. https://doi.org/10.1007/978-3-211-72861-1_91 | |
| 826. | Gös, W., Grasser, T.: "Charging and Discharging of Oxide Defects in Reliability Issues"; Vortrag: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 15.10.2007 - 18.10.2007; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8; S. 27 - 32. | |
| 825. | Sverdlov, V., Kosina, H., Selberherr, S.: "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon"; Vortrag: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 01.10.2007 - 05.10.2007; in: "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", O1-14 (2007). | |
| 824. | Sverdlov, V., Kosina, H., Selberherr, S.: "Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model"; Vortrag: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in: "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 S. | |
| 823. | Meller, G., Li, L., Holzer, S., Kosina, H.: "Dynamic Monte Carlo Simulation of an Amorphous Organic Device"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 373 - 376. https://doi.org/10.1007/978-3-211-72861-1_90 | |
| 822. | Orio, R., Ceric, H., Selberherr, S.: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 62 - 63. | |
| 821. | Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: "Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory"; Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6; S. 386 - 389. | |
| 820. | Ertl, O., Heitzinger, C., Selberherr, S.: "Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 417 - 420. https://doi.org/10.1007/978-3-211-72861-1_101 | |
| 819. | Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S.: "Electro-Biological Simulation using a Web Front-End"; Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 493 - 495. | |
| 818. | Ceric, H., Selberherr, S.: "Electromigration Modeling for Interconnect Structures in Microelectronics"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro (eingeladen); 03.09.2007 - 06.09.2007; in: "ECS Transactions", (2007), ISBN: 978-1-56677-565-6; S. 295 - 304. | |
| 817. | Ceric, H., Selberherr, S.: "Electromigration in Interconnect Structures of Microelectronic Circuits"; Vortrag: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija (eingeladen); 21.05.2007 - 25.05.2007; in: "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8; S. 23 - 28. | |
| 816. | Sverdlov, V., Kosina, H.: "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 92 - 93. | |
| 815. | Karaivanova, A., Atanassov, E., Gurov, T.V., Nedjalkov, M., Vasileska, D., Raleva, K.: "Electron-Phonon Interaction in Nanowires: A Monte Carlo Study of the Effect of the Field"; Vortrag: Seminar on Monte Carlo Methods (MCM), Reading; 18.06.2007 - 21.06.2007; in: "Proceedings of the Seminar on Monte Carlo Methods (MCM)", (2007), S. 23. | |
| 814. | Sverdlov, V.: "Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures"; Vortrag: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 23.09.2007 - 28.09.2007; in: "7th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), S. 63 - 64. | |
| 813. | Gös, W., Grasser, T.: "First-Principles Investigation on Oxide Trapping"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 157 - 160. https://doi.org/10.1007/978-3-211-72861-1_38 | |
| 812. | Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S.: "Hydrodynamic Modeling of AlGaN/GaN HEMTs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 273 - 276. https://doi.org/10.1007/978-3-211-72861-1_65 | |
| 811. | Sverdlov, V., Karlowatz, G., Ungersböck, E., Kosina, H.: "Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 329 - 332. https://doi.org/10.1007/978-3-211-72861-1_79 | |
| 810. | Sverdlov, V., Ungersböck, E., Kosina, H.: "Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs"; Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 24.01.2007 - 26.01.2007; in: "EUROSOI 2007", (2007), S. 39 - 40. | |
| 809. | Ceric, H., Nentchev, A., Langer, E., Selberherr, S.: "Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 37 - 40. https://doi.org/10.1007/978-3-211-72861-1_9 | |
| 808. | Hollauer, Ch., Ceric, H., van Barel, G., Witvrouw, A., Selberherr, S.: "Investigation of Intrinsic Stress Effects in Cantilever Structures"; Vortrag: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 16.01.2007 - 19.01.2007; in: "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2; Paper-Nr. 151, 4 S. | |
| 807. | Triebl, O., Grasser, T.: "Investigation of Vector Discretization Schemes for Box Volume Methods"; Vortrag: The Nanotechnology Conference and Trade Show, Santa Clara; 20.05.2007 - 24.05.2007; in: "NSTI Nanotech Proceedings", 3 (2007), ISBN: 1-4200-6184-4; S. 61 - 64. | |
| 806. | Karner, M., Baumgartner, O., Pourfath, M., Vasicek, M., Kosina, H.: "Investigation of a MOSCAP Using NEGF"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 805. | Heitzinger, C., Ringhofer, Ch., Selberherr, S.: "Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-scale Model"; Vortrag: Meeting of the Electrochemical Society, Multi-Scale Simulations of Electrochemical Systems, Chicago; 06.05.2007 - 10.05.2007; in: "211th ECS Meeting", 0947 (2007), ISSN: 1091-8213. | |
| 804. | Heinzl, R., Mach, G., Schwaha, P., Selberherr, S.: "Labtool - A Managing Software for Computer Courses"; Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 24.10.2007 - 27.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 488 - 492. | |
| 803. | Grabinski, W., Grasser, T., Gildenblat, G., Smit, G.-J., Bucher, M., Aarts, A., Tajic, A., Chauhan, Y. S., Napieralski, A., Fjeldly, T.A., Iniguez, B., Iannaccone, G., Kayal, M., Posch, W., Wachutka, G., Prégaldiny, F., Lallement, CH., Lemaitre, L.: "MOS-AK: Open Compact Modeling Forum"; Vortrag: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan (eingeladen); 23.01.2007; in: "The 4th International Workshop on Compact Modeling", (2007), S. 1 - 11. | |
| 802. | Vitanov, S., Palankovski, V., Quay, R., Langer, E.: "Modeling of Electron Transport in GaN-based Materials and Devices"; Poster: 28th International Conference on the Physics of Semiconductors, Wien; 24.07.2006 - 28.07.2006; in: "28th International Conference on the Physics of Semiconductors", (2007), S. 244. | |
| 801. | Vasicek, M., Karner, M., Ungersböck, E., Wagner, M., Kosina, H., Grasser, T.: "Modeling of Macroscopic Transport Parameters in Inversion Layers"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 201 - 204. https://doi.org/10.1007/978-3-211-72861-1_48 | |
| 800. | Heinzl, R., Schwaha, P., Giani, C., Selberherr, S.: "Modeling of Non-Trivial Data-Structures with a Generic Scientific Simulation Environment"; Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 5 - 13. | |
| 799. | Ceric, H., Langer, E., Selberherr, S.: "Modeling of Residual Stresses in Thin Metal Films"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 04.04.2007 - 06.04.2007; in: "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), S. 18. | |
| 798. | Heinzl, R., Schwaha, P., Selberherr, S.: "Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design"; Vortrag: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in: "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-05-0; S. 100 - 107. | |
| 797. | Palankovski, V., Wagner, M., Heiss, W.: "Monte Carlo Simulation of Electron Transport in PbTe"; Vortrag: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in: "The 13thInternational Conference on Narrow Gap Semiconductors", (2007), S. 50. | |
| 796. | Vitanov, S., Palankovski, V.: "Monte Carlo Study of Transport Properties of InN"; Poster: International Conference on Narrow Gap Semiconductors, Guildford; 08.07.2007 - 12.07.2007; in: "The 13th International Conference on Narrow Gap Semiconductors", (2007), S. 99. | |
| 795. | Grasser, T., Kaczer, B.: "Negative Bias Temperature Instability: Recoverable versus Permanent Degradation"; Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6; S. 127 - 130. | |
| 794. | Vitanov, S., Palankovski, V.: "Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study"; Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. https://doi.org/10.1109/ISDRS.2007.4422390 | |
| 793. | Nentchev, A., Selberherr, S.: "On the Magnetic Field Extraction for On-Chip Inductance Calculation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 349 - 352. https://doi.org/10.1007/978-3-211-72861-1_84 | |
| 792. | Vasicek, M., Cervenka, J., Karner, M., Wagner, M., Grasser, T.: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 96 - 97. | |
| 791. | Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S.: "Predictive Simulation of AlGaN/GaN HEMTs"; Vortrag: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 14.10.2007 - 17.10.2007; in: "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3; S. 131 - 134. https://doi.org/10.1109/CSICS07.2007.31 | |
| 790. | Nedjalkov, M., Vasileska, D.: "Semi-Discrete 2D Wigner-Particle Approach"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 08.10.2007 - 10.10.2007; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), S. 122 - 123. | |
| 789. | Schwaha, P., Schwaha, M., Heinzl, R., Ungersböck, E., Selberherr, S.: "Simulation Methodologies for Scientific Computing - Modern Application Design"; Vortrag: International Conference on Software and Data Technologies (ICSOFT), Barcelona; 22.07.2007 - 25.07.2007; in: "Proceedings of the 2nd ICSOFT 2007", (2007), ISBN: 978-989-8111-07-4; S. 270 - 276. | |
| 788. | Grasser, T., Kaczer, B., Hehenberger, Ph., Gös, W., Connor, R., Reisinger, H., Gustin, W., Schlünder, C.: "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 10.12.2007 - 12.12.2007; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2007), ISBN: 1-4244-1508-x; S. 801 - 804. https://doi.org/10.1109/IEDM.2007.4419069 | |
| 787. | Selberherr, S. (2007). Strain Engineering for Nanoscale CMOS Transistors. IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil, Non-EU. (reposiTUm) | |
| 786. | Orio, R., Ceric, H., Selberherr, S.: "Strain-Induced Anisotropy of Electromigration in Copper Interconnect"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 785. | Benger, W., Ritter, G., Heinzl, R.: "The Concepts of VISH"; Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 28 - 41. | |
| 784. | Pourfath, M., Kosina, H., Selberherr, S.: "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Vortrag: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Waikoloa, Hawaii; 02.12.2007 - 07.12.2007; in: "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), S. 37 - 38. | |
| 783. | Pourfath, M., Kosina, H.: "The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 309 - 312. https://doi.org/10.1007/978-3-211-72861-1_74 | |
| 782. | Pourfath, M., Kosina, H., Selberherr, S.: "The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs"; Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 11.09.2007 - 13.09.2007; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1123-8; S. 239 - 242. | |
| 781. | Grasser, T., Gös, W., Sverdlov, V., Kaczer, B.: "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization"; Vortrag: International Reliability Physics Symposium (IRPS), Phoenix; 15.04.2007 - 19.04.2007; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5; S. 268 - 280. | |
| 780. | Nedjalkov, M., Vasileska, D., Raleva, K.: "Thermal Relaxation of Non-Equilibrium Electrons in Nanowires"; Vortrag: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 19.09.2007 - 21.09.2007; in: "8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007). | |
| 779. | Nentchev, A., Selberherr, S.: "Three-Dimensional On-Chip Inductance and Resistance Extraction"; Vortrag: Sociedade Brasileira da Microeltronica 2007 (SBCCI 2007), Rio de Janeiro; 03.09.2007 - 06.09.2007; in: "20th Symposium on Integrated Circuits and Systems Design", (2007), ISBN: 978-1-59593-910-4; 6 S. https://doi.org/10.1145/1284480.1284540 | |
| 778. | Cervenka, J., Ceric, H., Ertl, O., Selberherr, S.: "Three-Dimensional Sacrificial Etching"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 25.09.2007 - 27.09.2007; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", T. Grasser, S. Selberherr (Hrg.); Springer-Verlag Wien New York, 12 (2007), ISBN: 978-3-211-72860-4; S. 433 - 436. https://doi.org/10.1007/978-3-211-72861-1_105 | |
| 777. | Ceric, H., Langer, E., Selberherr, S.: "Three-Phase Model for the Volmer-Weber Crystal Growth"; Vortrag: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 20.02.2007 - 23.02.2007; in: "Nanostructures and Carrier Interactions", (2007), S. 127. | |
| 776. | Sverdlov, V., Karlowatz, G., Kosina, H., Selberherr, S.: "Two-Band k.p Model for the Conduction Band in Silicon"; Vortrag: The European Simulation and Modelling Conference (ESM), Malta; 22.10.2007 - 24.10.2007; in: "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6; S. 220 - 224. | |
| 775. | Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S.: "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12.12.2007 - 14.12.2007; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 S. | |
| 774. | Schwaha, P., Giani, C., Heinzl, R., Selberherr, S.: "Visualization of Polynomials Used in Series Expansions"; Vortrag: High-End Visualization Workshop, Obergurgl; 18.06.2007 - 22.06.2007; in: "Proceedings of the 4th High-End Visualization Workshop", (2007), ISBN: 978-3-86541-216-4; S. 139 - 148. | |
| 773. | Nedjalkov, M., Kosina, H., Vasileska, D.: "Wigner Ensemble Monte Carlo: Challanges of 2D Nano-Device Simulation"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 05.06.2007 - 09.06.2007; in: "Proceedings of the International Conference on Large-Scale Scientific Computing (LSSC)", (2007), S. B-41 - B-42. | |
| 772. | Pourfath, M., Kosina, H., Selberherr, S.: "A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x; S. 819 - 822. https://doi.org/10.1109/IEDM.2006.346739 | |
| 771. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: "A Computational Framework for Topological Operations"; Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 57. | |
| 770. | Movahhedi, M., Nentchev, A., Ceric, H., Abdipour, A., Selberherr, S.: "A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method"; Vortrag: European Microwave Week (EUMW), Manchester; 10.09.2006 - 15.09.2006; in: "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0; S. 1 - 4. | |
| 769. | Riedling, K., Selberherr, S.: "A Flexible Web-Based Publication Database"; Vortrag: International Conference on Education and Information Systems: Technologies and Applications (EISTA), Orlando, Florida, USA; 20.07.2006 - 23.07.2006; in: "Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006)", F. Malpica, A. Tremante, F. Welsch (Hrg.); International Institute of Informatics and Systemics (IIIS), (2006), ISBN: 980-6560-79-5; S. 262 - 267. | |
| 768. | Schwaha, P., Heinzl, R., Spevak, M., Grasser, T.: "A Generic Approach to Scientific Computing"; Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 137. | |
| 767. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S.: "A Generic Discretization Library"; Vortrag: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in: "OOPSLA Proceedings", (2006), ISSN: 1652-926x; S. 95 - 100. | |
| 766. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: "A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD"; Poster: The Nanotechnology Conference and Trade Show, Boston; 07.05.2006 - 11.05.2006; in: "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1; S. 526 - 529. | |
| 765. | Heinzl, R., Spevak, M., Schwaha, P., Selberherr, S.: "A Generic Topology Library"; Vortrag: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 22.10.2006 - 26.10.2006; in: "OOPSLA Proceedings", (2006), ISSN: 1652-926x; S. 85 - 93. | |
| 764. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: "A High Performance Generic Scientific Simulation Environment"; Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 61. | |
| 763. | Vitanov, S., Nedjalkov, M., Palankovski, V.: "A Monte Carlo Model of Piezoelectric Scattering in GaN"; Vortrag: International Conference on Numerical Methods and Applications (NM&A), Borovets; 20.08.2006 - 24.08.2006; in: "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), S. B-75. | |
| 762. | Holzer, S., Wagner, M., Friembichler, L., Langer, E., Grasser, T., Selberherr, S.: "A Multi-Purpose Optimization Framework for TCAD Applications"; Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 76. | |
| 761. | Suvorov, V., Hössinger, A., Djuric, Z.: "A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation"; Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 3 - 4. | |
| 760. | Heinzl, R., Spevak, M., Schwaha, P.: "A Novel High Performance Approach for Technology Computer Aided Design"; Vortrag: Student Electrical Engineering, Information and Communication Technologies (STUDENT EEICT), Brünn; 27.04.2006; in: "Proceedings of the 12th Conference Student EEICT 2006", Vol.4 (2006), ISBN: 80-214-3163-6; S. 446 - 450. | |
| 759. | Karner, M., Wagner, M., Grasser, T., Kosina, H.: "A Physically Based Quantum Correction Model for DG MOSFETs"; Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in: "San Francisco 2006 MRS Meeting Abstracts", (2006), S. 104 - 105. | |
| 758. | Wittmann, R., Uppal, S., Hössinger, A., Cervenka, J., Selberherr, S.: "A Study of Boron Implantation into High Ge Content SiGe Alloys"; Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1469, 1 S. | |
| 757. | Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, E., Grasser, T., Selberherr, S.: "A Tensorial High-Field Electron Mobility Model for Strained Silicon"; Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in: "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4; S. 72 - 73. | |
| 756. | Riedling, K., Selberherr, S.: "A Web-Based Publication Database for Performance Evaluation and Research Documentation"; Vortrag: International Conference for Engineering Education (ICEE), San Juan, Puerto Rico; 23.07.2006 - 28.07.2006; in: "Proceedings of the ICEE 2006", International Network for Engineering Education and Research, (2006), ISBN: 1-58874-648-8; S. R2F-5 - R2F-10. | |
| 755. | Schwaha, P., Heinzl, R., Spevak, M., Grasser, T.: "Advanced Equation Processing for TCAD"; Vortrag: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 18.06.2006 - 21.06.2006; in: "Proceedings of the PARA Conference", (2006), S. 64. | |
| 754. | Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., Selberherr, S.: "An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications"; Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in: "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9; S. 239 - 244. | |
| 753. | Karlowatz, G., Ungersböck, E., Wessner, W., Kosina, H., Selberherr, S.: "Analysis of Hole Transport in Arbitrarily Strained Germanium"; Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1449, 1 S. | |
| 752. | Dhar, S., Ungersböck, E., Kosina, H., Grasser, T., Selberherr, S.: "Analytical Modeling of Electron Mobility in Strained Germanium"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 39 - 42. https://doi.org/10.1109/SISPAD.2006.282833 | |
| 751. | Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., Selberherr, S.: "Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes"; Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 S. | |
| 750. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: "Automatic Linearization using Functional Programming for Scientific Computing"; Vortrag: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 10.07.2006 - 14.07.2006; in: "ICCAM 2006 Abstracts of Talks", (2006), S. 147. | |
| 749. | Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: "Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations"; Vortrag: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 17 - 18. | |
| 748. | Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T.: "Comparison of Deposition Models for TEOS CVD Process"; Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), S. 158 - 159. | |
| 747. | Heinzl, R., Schwaha, P., Spevak, M., Grasser, T.: "Concepts for High Performance Generic Scientific Computing"; Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 4-1 - 4-9. | |
| 746. | Karner, M., Gehring, A., Holzer, S., Wagner, M., Kosina, H.: "Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 161 - 162. | |
| 745. | Sverdlov, V., Kosina, H., Selberherr, S.: "Current Flow in Upcoming Microelectronic Devices"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen (eingeladen); 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4; S. 3 - 8. | |
| 744. | Sverdlov, V., Kosina, H., Selberherr, S.: "Current Transport in Nanoelectronic Semiconductor Devices"; Vortrag: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore (eingeladen); 10.01.2006 - 13.01.2006; in: "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9; S. 490 - 495. | |
| 743. | Wagner, M., Span, G., Holzer, S., Grasser, T.: "Design Optimization of Large Area Si/SiGe Thermoelectric Generators"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 397 - 400. https://doi.org/10.1109/SISPAD.2006.282918 | |
| 742. | Pourfath, M., Kosina, H., Selberherr, S.: "Dissipative Transport in CNTFETs"; Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 345 - 346. | |
| 741. | Li, L., Meller, G., Kosina, H.: "Doping Dependent Conductivity in Organic Semiconductors"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 204 - 207. https://doi.org/10.1109/SISPAD.2006.282872 | |
| 740. | Karlowatz, G., Wessner, W., Kosina, H.: "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation"; Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 4-1 - 4-6. | |
| 739. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: "Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 43 - 46. https://doi.org/10.1109/SISPAD.2006.282834 | |
| 738. | Meller, G., Li, L., Holzer, S., Kosina, H.: "Electron Kinetics in Disordered Organic Semiconductors"; Poster: ACS/IEEE/MRS Annual Organic Microelectronics Workshop, Toronto; 09.07.2006 - 12.07.2006; in: "Abstracts 2nd Annual Organic Microelectronics Workshop", (2006), S. 42. | |
| 737. | Dhar, S., Ungersböck, E., Kosina, H., Grasser, T., Selberherr, S.: "Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 153 - 154. | |
| 736. | Li, L., Meller, G., Kosina, H.: "Field-Dependent Effective Transport Energy in Organic Semiconductor"; Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 11.12.2006 - 15.12.2006; in: "3rd Meeting on Molecular Electronics", (2006), S. T2-PC18. | |
| 735. | Palankovski, V., Vitanov, S., Quay, R.: "Field-Plate Optimization of AlGaN/GaN HEMTs"; Vortrag: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 12.11.2006 - 15.11.2006; in: "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7; S. 107 - 110. https://doi.org/10.1109/CSICS.2006.319926 | |
| 734. | Karlowatz, G., Ungersböck, E., Wessner, W., Kosina, H.: "Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 63 - 66. https://doi.org/10.1109/SISPAD.2006.282839 | |
| 733. | Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S.: "Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices"; Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 27.09.2006 - 29.09.2006; in: "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9; S. 235 - 238. | |
| 732. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: "High Performance Process and Device Simulation with a Generic Environment"; Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 S. | |
| 731. | Palankovski, V., Marchlewski, A., Ungersböck, E., Selberherr, S.: "Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices"; Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 14-1 - 14-9. | |
| 730. | Wittmann, R., Puchner, H., Ceric, H., Selberherr, S.: "Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9; S. 41 - 44. | |
| 729. | Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R.: "Influence of Interface and Oxide Traps on Negative Bias Temperature Instability"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 11.06.2006 - 12.06.2006; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), S. 163 - 164. | |
| 728. | Ferrari, G., Jacoboni, C., Nedjalkov, M., Asenov, A.: "Introducing Energy Broadening in Semiclassical Monte Carlo Simulations"; Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 17 - 18. | |
| 727. | Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R.: "Investigation of NBTI Recovery During Measurement"; Vortrag: Materials Research Society Spring Meeting (MRS), San Francisco; 17.04.2006 - 21.04.2006; in: "San Francisco 2006 MRS Meeting Abstracts", (2006), S. 110 - 111. | |
| 726. | Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T.: "Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2; S. 365 - 370. | |
| 725. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations"; Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1397, 1 S. | |
| 724. | Sverdlov, V., Ungersböck, E., Kosina, H.: "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions"; Hauptvortrag: NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 15.10.2006 - 19.10.2006; in: "NATO Advanced Research Workshop Conference Abstracts", (2006), S. 77 - 78. | |
| 723. | Sverdlov, V., Ungersböck, E., Kosina, H.: "Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations"; Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 08.03.2006 - 10.03.2006; in: "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), S. 133 - 134. | |
| 722. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: "Modeling of Advanced Semiconductor Devices"; Vortrag: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto (eingeladen); 28.08.2006 - 01.09.2006; in: "ECS Transactions", (2006), ISBN: 1-56677-512-4; S. 207 - 216. | |
| 721. | Grasser, T., Gös, W., Kaczer, B.: "Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability"; Vortrag: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 16.10.2006 - 19.10.2006; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2006), ISBN: 1-4244-0297-2; S. 5 - 10. | |
| 720. | Kosina, H.: "Modeling of Electronic Transport Phenomena in Semiconductor Nanodevices"; Vortrag: The 4th International Nanotech Symposium & Exhibition, Seoul (eingeladen); 30.08.2006 - 01.09.2006; in: "Program Book NANO KOREA 2006", (2006). | |
| 719. | Hollauer, Ch., Ceric, H., Selberherr, S.: "Modeling of Intrinsic Stress Effects in Deposited Thin Films"; Vortrag: EUROSENSORS XX, Göteborg; 17.09.2006 - 20.09.2006; in: "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2; S. 324 - 325. | |
| 718. | Grasser, T., Selberherr, S.: "Modeling of Negative Bias Temperature Instability"; Vortrag: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa (eingeladen); 25.06.2006 - 28.06.2006; in: "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), S. 1 - 2. | |
| 717. | Gurov, T.V., Atanassov, E., Nedjalkov, M., Palankovski, V.: "Monte Carlo Method for Modeling of Electron Transport in Quantum Wires"; Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 13-1 - 13-8. | |
| 716. | Wittmann, R., Hössinger, A., Cervenka, J., Uppal, S., Selberherr, S.: "Monte Carlo Simulation of Boron Implantation into (100) Germanium"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 381 - 384. https://doi.org/10.1109/SISPAD.2006.282914 | |
| 715. | Dhar, S., Ungersböck, E., Nedjalkov, M., Palankovski, V.: "Monte Carlo Simulation of the Electron Mobility in Strained Silicon"; Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in: "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7; S. 169 - 173. | |
| 714. | Ceric, H., Cervenka, J., Langer, E., Selberherr, S.: "Moving Boundary Applications in Process and Interconnect TCAD"; Vortrag: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 13.08.2006 - 19.08.2006; in: "Proceedings Mini-Workshop on Anisotropic Motion Laws", Report No.38/2006 (2006), S. 13 - 16. | |
| 713. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: "Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 26.04.2006 - 28.04.2006; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2; S. 173 - 176. | |
| 712. | Kosina, H.: "Nanoelectronic Device Simulation Based on the Wigner Function Formalism"; Vortrag: International Workshop on Tera- and Nano-Devices: Physics and Modeling, Aizu-Wakamatsu (eingeladen); 16.10.2006 - 19.10.2006; in: "IWTND06 Workbook", (2006), S. 26. | |
| 711. | Entner, R., Grasser, T., Enichlmair, H., Minixhofer, R.: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), S. 96 - 97. | |
| 710. | Vitanov, P., LeQuang, N., Harizanova, A., Nichiporuk, O., Ivanova, T., Vitanov, S., Palankovski, V.: "New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells"; Vortrag: World Renewable Energy Congress (WREC), Firenze; 19.08.2006 - 25.08.2006; in: "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8; S. 564. | |
| 709. | Karner, M., Holzer, S., Vasicek, M., Gös, W., Wagner, M., Kosina, H., Selberherr, S.: "Numerical Analysis of Gate Stacks"; Vortrag: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 29.10.2006 - 03.11.2006; in: "210th ECS Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1119, 1 S. | |
| 708. | Pourfath, M., Kosina, H.: "On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors"; Poster: Trends in Nanotechnology Conference (TNT), Grenoble; 04.09.2006 - 08.09.2006; in: "Proceedings Trends in Nanotechnology", (2006), 2 S. | |
| 707. | Pourfath, M., Kosina, H., Selberherr, S.: "On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors"; Vortrag: Iranian Conference on Electrical Engineering (ICEE), Tehran; 16.05.2006 - 18.05.2006; in: "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 S. | |
| 706. | Pourfath, M., Kosina, H., Selberherr, S.: "Optimal Design for Carbon Nanotube Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 19.09.2006 - 21.09.2006; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4; S. 210 - 213. | |
| 705. | Holzer, S., Selberherr, S.: "Optimization Issue in Interconnect Analysis"; Vortrag: International Conference on Microelectronics (MIEL), Beograd (eingeladen); 14.05.2006 - 17.05.2006; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x; S. 465 - 470. https://doi.org/10.1109/ICMEL.2006.1650994 | |
| 704. | Pourfath, M., Kosina, H., Selberherr, S.: "Optimizing the Performance of Carbon Nanotube Transistors"; Poster: IEEE Conference on Nanotechnology (NANO), Cincinnati; 17.06.2006 - 20.06.2006; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2006), ISBN: 1-4244-0078-3; S. 520 - 523. https://doi.org/10.1109/NANO.2006.247702 | |
| 703. | Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: "Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 18.09.2006 - 22.09.2006; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4; S. 178 - 181. | |
| 702. | Li, L., Meller, G., Kosina, H.: "Percolation Current in Organic Semiconductors"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 161 - 162. | |
| 701. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T., Selberherr, S.: "Performance Analysis for High-Precision Interconnect Simulation"; Vortrag: European Simulation and Modeling Conference (ESMC), Toulouse; 23.10.2006 - 25.10.2006; in: "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9; S. 113 - 116. | |
| 700. | Heinzl, R., Schwaha, P., Spevak, M., Grasser, T.: "Performance Aspects of a DSEL for Scientific Computing with C++"; Vortrag: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 03.07.2006 - 07.07.2006; in: "Proceedings of the POOSC Conference", (2006), S. 37 - 41. | |
| 699. | Ungersböck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S.: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 141 - 142. | |
| 698. | Sheikholeslami, A., Selberherr, S., Parhami, F., Puchner, H.: "Planarization of Passivation Layers during Manufacturing Processes of Image Sensors"; Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in: "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x; S. 35 - 36. | |
| 697. | Sheikholeslami, A., Parhami, F., Puchner, H., Selberherr, S.: "Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers"; Vortrag: International Conference on Nanoscience and Technology (ICNT), Basel; 30.07.2006 - 04.08.2006; in: "International Conference on Nanoscience and Technology (ICNT 2006)", (2006), ISBN: 3-905084-71-6; S. 163 - 164. | |
| 696. | Wagner, M., Span, G., Holzer, S., Triebl, O., Grasser, T.: "Power Output Improvement of SiGe Thermoelectric Generators"; Vortrag: Meeting of the Electrochemical Society (ECS), Cancun; 29.10.2006 - 03.11.2006; in: "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213; Paper-Nr. 1516, 1 S. | |
| 695. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: "Process and Device Simulation With a Generic Scientific Simulation Environment"; Vortrag: International Conference on Microelectronics (MIEL), Beograd; 14.04.2006 - 17.04.2006; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x; S. 475 - 478. https://doi.org/10.1109/ICMEL.2006.1650996 | |
| 694. | Wagner, M., Grasser, T., Karner, M., Kosina, H.: "Quantum Correction for DG MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 87 - 88. | |
| 693. | Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S.: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Vortrag: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 29 - 30. | |
| 692. | Meller, G., Li, L., Holzer, S., Kosina, H.: "Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems"; Vortrag: Numerical Simulation of Optoelectronic Devices (NUSOD), Singapore; 11.09.2006 - 14.09.2006; in: "Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices", (2006), ISBN: 0-7803-9755-x; S. 1 - 2. | |
| 691. | Spevak, M., Heinzl, R., Schwaha, P., Grasser, T.: "Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization"; Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 08.02.2006 - 10.02.2006; in: "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3; S. 5-1 - 5-8. | |
| 690. | Ceric, H., Hollauer, Ch., Selberherr, S.: "Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9; S. 359 - 363. | |
| 689. | Karner, M., Ungersböck, E., Gehring, A., Holzer, S., Kosina, H., Selberherr, S.: "Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 314 - 317. https://doi.org/10.1109/SISPAD.2006.282898 | |
| 688. | Ungersböck, E., Sverdlov, V., Kosina, H., Selberherr, S.: "Strain Engineering for CMOS Devices"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai (eingeladen); 23.10.2006 - 26.10.2006; in: "2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7; S. 124 - 127. | |
| 687. | Grasser, T., Entner, R., Triebl, O., Enichlmair, H.: "TCAD Modeling of Negative Bias Temperature Instability"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 330 - 333. https://doi.org/10.1109/SISPAD.2006.282902 | |
| 686. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J., Selberherr, S.: "The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 208 - 211. https://doi.org/10.1109/SISPAD.2006.282873 | |
| 685. | Ungersböck, E., Kosina, H., Selberherr, S.: "The Influence of Stress on Inversion Layer Mobility"; Vortrag: Advanced Heterostructure Workshop (AHW), Kona (eingeladen); 03.12.2006 - 08.12.2006; in: "Abstracts Advanced Heterostructure Workshop", (2006), S. TH-2. | |
| 684. | Krishnamohan, T., Jungemann, C., Kim, D., Ungersböck, E., Selberherr, S., Wong, P., Nishi, Y., Saraswat, K.: "Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 11.12.2006 - 13.12.2006; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x; S. 937 - 940. https://doi.org/10.1109/IEDM.2006.346938 | |
| 683. | Span, G., Wagner, M., Holzer, S., Grasser, T.: "Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions"; Vortrag: International Conference on Thermoelectrics, Vienna; 06.08.2006 - 10.08.2006; in: "International Conference on Thermoelectrics", 6 (2006), ISBN: 1-4244-0811-3; S. 23 - 28. | |
| 682. | Wagner, M., Span, G., Grasser, T.: "Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content"; Vortrag: International SiGe Technology and Device Meeting (ISTDM), Princeton; 15.05.2006 - 17.05.2006; in: "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4; S. 216 - 217. | |
| 681. | Ceric, H., Hollauer, Ch., Selberherr, S.: "Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 192 - 195. https://doi.org/10.1109/SISPAD.2006.282869 | |
| 680. | Holzer, S., Hollauer, Ch., Ceric, H., Karner, M., Grasser, T., Langer, E., Selberherr, S.: "Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 03.07.2006 - 07.07.2006; in: "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9; S. 154 - 157. | |
| 679. | Selberherr, S.: "Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices"; Vortrag: Workshop on Semiconductors and Micro- & Nano-Technology (SEMINATEC), Campinas (eingeladen); 09.02.2006 - 10.02.2006; in: "Abstracts of Workshop on Semiconductors and Micro- & Nano-Technology", (2006), S. 12 - 15. | |
| 678. | Pourfath, M., Kosina, H., Selberherr, S.: "Tunneling-CNTFETs"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 291 - 292. | |
| 677. | Vitanov, P., Vitanov, S., Palankovski, V.: "Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells"; Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 04.09.2006 - 08.09.2006; in: "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5; S. 1475 - 1478. | |
| 676. | Vitanov, S., Palankovski, V., Quay, R., Langer, E.: "Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs"; Vortrag: Target Days (TARGET), Frascati; 16.10.2006 - 18.10.2006; in: "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5; S. 81 - 84. | |
| 675. | Palankovski, V., Hristov, M., Philippov, P.: "Two-Dimensional Physical AC-Simulation of GaAs HBTs"; Vortrag: International Scientific and Applied Science Conference (ET), Sozopol; 20.09.2006 - 22.09.2006; in: "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7; S. 164 - 168. | |
| 674. | Nedjalkov, M., Vasileska, D., Atanassov, E., Palankovski, V.: "Ultrafast Wigner Transport in Quantum Wires"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 285 - 286. | |
| 673. | Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Kosina, H., Grasser, T., Selberherr, S.: "VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 25.05.2006 - 27.05.2006; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; S. 255 - 256. | |
| 672. | Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S.: "VSP-A Gate Stack Analyzer"; Vortrag: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 26.06.2006 - 28.06.2006; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), S. 101 - 102. | |
| 671. | Triebl, O., Grasser, T.: "Vector Discretization Schemes Based on Unstructured Neighbourhood Information"; Vortrag: International Semiconductor Conference CAS, Sinaia; 27.09.2006 - 29.09.2006; in: "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7; S. 337 - 340. | |
| 670. | Kosina, H., Sverdlov, V., Grasser, T.: "Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 06.09.2006 - 08.09.2006; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; S. 357 - 360. https://doi.org/10.1109/SISPAD.2006.282908 | |
| 669. | Pourfath, M., Kosina, H., Selberherr, S.: "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors"; Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 95 - 96. | |
| 668. | Heinzl, R., Spevak, M., Schwaha, P., Grasser, T.: "A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator"; Vortrag: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in: "2005 PhD Research in Microelectronics and Electronics", Vol. 1 (2005), ISBN: 0-7803-9345-7; S. 175 - 178. | |
| 667. | Dhar, S., Kosina, H., Palankovski, V., Ungersböck, E., Selberherr, S.: "A Physically-Based Electron Mobility Model for Strained Si Devices"; Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 13 - 16. | |
| 666. | Heinzl, R., Schwaha, P., Spevak, M., Grasser, T.: "Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds"; Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 26.10.2005 - 28.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 425 - 429. | |
| 665. | Li, L., Kosina, H.: "An Analytical Model for Organic Thin Film Transistors"; Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; 19.12.2005 - 21.12.2005; in: "Proceedingd of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2; S. 571 - 574. | |
| 664. | Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S.: "Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 187 - 190. https://doi.org/10.1109/SISPAD.2005.201504 | |
| 663. | Ceric, H., Deshpande, V., Hollauer, Ch., Holzer, S., Grasser, T., Selberherr, S.: "Comprehensive Analysis of Vacancy Dynamics Due to Electromigration"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 27.06.2005 - 01.07.2005; in: "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5; S. 100 - 103. | |
| 662. | Schwaha, P., Heinzl, R., Spevak, M., Grasser, T.: "Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 235 - 238. https://doi.org/10.1109/SISPAD.2005.201516 | |
| 661. | Gehring, A., Selberherr, S.: "Current Transport Models for Nano-Scale Semiconductor Devices"; Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (eingeladen); 10.07.2005 - 13.07.2005; in: "Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics", Vol. 6 (2005), ISBN: 980-6560-58-2; S. 366 - 371. | |
| 660. | Angelov, G., Palankovski, V., Hristov, M.: "Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators"; Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in: "ISSE 2005, 28th International Spring Seminar on Electronics Technology, Conference Program and Abstracts", ÖVE-Schriftenreihe, 39 (2005), ISBN: 3-85133036-6; S. 110 - 111. | |
| 659. | Angelov, G., Palankovski, V., Hristov, M., Philippov, P.: "Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators"; Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 19.05.2005 - 22.05.2005; in: "28th International Spring Seminar on Electronics Technology", (2005), ISBN: 0-7803-9324-4; S. 486 - 491. https://doi.org/10.1109/ISSE.2005.1491077 | |
| 658. | Spevak, M., Grasser, T.: "Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems"; Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 474 - 478. | |
| 657. | Wessner, W., Ceric, H., Cervenka, J., Selberherr, S.: "Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 147 - 150. https://doi.org/10.1109/SISPAD.2005.201494 | |
| 656. | Karner, M., Gehring, A., Kosina, H.: "Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics"; Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 97 - 98. | |
| 655. | Karner, M., Gehring, A., Kosina, H., Selberherr, S.: "Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 35 - 38. https://doi.org/10.1109/SISPAD.2005.201466 | |
| 654. | Karner, M., Gehring, A., Holzer, S., Kosina, H., Selberherr, S.: "Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics"; Vortrag: Meeting of the Electrochemical Society (ECS), Los Angeles; 16.10.2005 - 21.10.2005; in: "208th ECS Meeting", 1119 (2005), ISSN: 1091-8213; 1 S. | |
| 653. | Jungemann, C., Grasser, T., Neinhüs, B., Meinerzhagen, B.: "Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium"; Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 25 - 28. | |
| 652. | Pourfath, M., Park, W.J., Kosina, H., Selberherr, S.: "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 50 - 51. | |
| 651. | Gurov, T.V., Atanasov, E., Dimov, I., Palankovski, V., Smirnov, S.: "Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in: "Book of Abstracts", (2005), S. 26 - 27. | |
| 650. | Nedjalkov, M., Gurov, T.V., Kosina, H., Vasileska, D., Palankovski, V.: "Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 46. | |
| 649. | Schwaha, P., Heinzl, R., Brezna, W., Smoliner, J., Enichlmair, H., Minixhofer, R., Grasser, T.: "Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides"; Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 469 - 473. | |
| 648. | Heinzl, R., Grasser, T.: "Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 211 - 214. https://doi.org/10.1109/SISPAD.2005.201510 | |
| 647. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J.: "Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistor"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 91 - 94. https://doi.org/10.1109/SISPAD.2005.201480 | |
| 646. | Pourfath, M., Cheong, B.-H., Park, W., Kosina, H., Selberherr, S.: "High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration"; Vortrag: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707; S. 95 - 98. | |
| 645. | Grasser, T. (2005). Higher-Order Moment Models for Engineering Applications. Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano, Austria. (reposiTUm) | |
| 644. | Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S.: "Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices"; Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 45 - 48. | |
| 643. | Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S.: "Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET"; Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 17.10.2005 - 20.10.2005; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1; S. 99 - 102. | |
| 642. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J., Selberherr, S.: "Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Cdrom Isbn: 0-7803-9204-3 (2005), ISBN: 0-7803-9203-5; S. 541 - 544. | |
| 641. | Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., Selberherr, S.: "Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process"; Vortrag: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 25.07.2005 - 28.07.2005; in: "2005 PhD Research in Microelectronics and Electronics", Vol. 2 (2005), ISBN: 0-7803-9345-7; S. 279 - 282. | |
| 640. | Hollauer, Ch., Holzer, S., Ceric, H., Wagner, S., Grasser, T., Selberherr, S.: "Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts"; Vortrag: International Congress on Thermal Stresses (TS), Wien; 26.05.2005 - 29.05.2005; in: "Proceedings of The Sixth International Congress on Thermal Stresses", Schriftenreihe der Technischen Universität Wien, Vol. 2 (2005), ISBN: 3-901167-12-9; S. 637 - 640. | |
| 639. | Meller, G., Li, L., Kosina, H.: "Kinetic Monte Carlo Simulation of Molecularly Doped Organic Semiconductors"; Poster: Meeting on Molecular Electronics (ELECMOL), Grenoble; 19.12.2005 - 21.12.2005; in: "Second Meeting on Molecular Electronics", (2005), S. 107. | |
| 638. | Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S.: "Level Set Method Based General Topography Simulator and its Application in Interconnect Processes"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 07.04.2005 - 08.04.2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707; S. 139 - 142. | |
| 637. | Holzer, S., Selberherr, S.: "Material Parameter Identification for Interconnect Analysis"; Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli (eingeladen); 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", Vol. 2 (2005), ISBN: 81-7764-946-9; S. 635 - 641. | |
| 636. | Ceric, H., Hollauer, Ch., Selberherr, S.: "Microstructure and Stress Aspects of Electromigration Modeling"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 12.09.2005 - 14.09.2005; in: "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), S. P 17. | |
| 635. | Sverdlov, V., Kosina, H., Selberherr, S.: "Modeling Current Transport in Ultra-Scaled Field Effect Transistors"; Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 19.12.2005 - 21.12.2005; in: "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2; S. 385 - 390. | |
| 634. | Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S.: "Modeling of Tunneling Currents for Highly Degraded CMOS Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 219 - 222. https://doi.org/10.1109/SISPAD.2005.201512 | |
| 633. | Dhar, S., Karlowatz, G., Ungersböck, E., Kosina, H., Selberherr, S.: "Modeling of Velocity-Field Characteristics in Strained Silicon"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", Vol. 2 (2005), ISBN: 81-7764-947-7; S. 1060 - 1063. | |
| 632. | Wittmann, R., Hössinger, A., Selberherr, S.: "Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 191 - 194. https://doi.org/10.1109/SISPAD.2005.201505 | |
| 631. | Meller, G., Li, L., Kosina, H.: "Monte Carlo Simulation of Molecularly Doped Organic Semiconductors"; Vortrag: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in: "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), S. 44 - 45. | |
| 630. | Ungersböck, E., Kosina, H.: "Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers"; Vortrag: Modelling and Simulation of Electron Devices (MSED), Pisa; 04.07.2005 - 05.07.2005; in: "15th Workshop on Modelling and Simulation of Electron Devices", (2005), S. 10 - 11. | |
| 629. | Dhar, S., Karlowatz, G., Ungersböck, E., Kosina, H.: "Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 223 - 226. https://doi.org/10.1109/SISPAD.2005.201513 | |
| 628. | Karner, M., Gehring, A., Holzer, S., Kosina, H.: "On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2005), S. 33 - 34. | |
| 627. | Nentchev, A., Sabelka, R., Wessner, W., Selberherr, S.: "On-Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures"; Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), S. 420 - 424. | |
| 626. | Wagner, M., Karner, M., Grasser, T.: "Quantum Correction Models for Modern Semiconductor Devices"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 13.12.2005 - 17.12.2005; in: "Proceedings of the XIII International Workshop on Semiconductor Devices", Vol. 1 (2005), S. 458 - 461. | |
| 625. | Kosina, H., Sverdlov, V., Ringhofer, Ch., Nedjalkov, M., Selberherr, S.: "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 06.06.2005 - 10.06.2005; in: "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), S. 36 - 37. | |
| 624. | Gehring, A., Sverdlov, V., Kosina, H., Selberherr, S.: "Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach"; Vortrag: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 19.01.2005 - 21.01.2005; in: "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), S. 71 - 72. | |
| 623. | Pourfath, M., Kosina, H., Selberherr, S.: "Rigorous Modeling of Carbon Nanotube Field Effect Transistors"; Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 27.11.2005 - 02.12.2005; in: "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), S. 155 - 156. | |
| 622. | Sverdlov, V.: "Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays"; Vortrag: International Conference on Unsolved Problems of Noise (UPON), Gallipoli (eingeladen); 06.06.2005 - 10.06.2005; in: "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), S. 177 - 182. | |
| 621. | Nentchev, A., Sabelka, R., Selberherr, S.: "Simplification of Spacial Structures by Simulation with Periodic Boundary Conditions"; Vortrag: VLSI Multilevel Interconnection Conference (VMIC), Fremont; 03.10.2005 - 06.10.2005; in: "2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference", (2005), S. 547 - 552. | |
| 620. | Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S.: "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology"; Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 29 - 32. | |
| 619. | Li, L., Meller, G., Kosina, H.: "Temperature and Field-dependence of Hopping Conduction in Organic Semiconductors"; Poster: European Conference on Organic Electronics and Related Phenomena (ECOER), Winterthur; 27.09.2005 - 30.09.2005; in: "3rd European Conference on Organic Electronics and Related Phenomena Book of Abstracts", (2005), S. 112 - 113. | |
| 618. | Ungersböck, E., Kosina, H.: "The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 311 - 314. https://doi.org/10.1109/SISPAD.2005.201535 | |
| 617. | Pourfath, M., Kosina, H., Cheong, B.-H., Park, W.J., Selberherr, S.: "The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors"; Vortrag: IEEE Conference on Nanotechnology (NANO), Nagoya; 11.07.2005 - 15.07.2005; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", Cdrom Isbn: 0-7803-9200-0 (2005), 4 S. https://doi.org/10.1109/NANO.2005.1500641 | |
| 616. | Span, G., Wagner, M., Grasser, T.: "Thermoelectric Power Generation Using Large Area pn-Junctions"; Vortrag: European Conference on Thermoelectrics (ECT), Nancy; 01.09.2005 - 02.09.2005; in: "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), S. 72 - 75. | |
| 615. | Hollauer, Ch., Ceric, H., Selberherr, S.: "Three-Dimensional Simulation of Stress Dependent Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 01.09.2005 - 03.09.2005; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; S. 183 - 186. https://doi.org/10.1109/SISPAD.2005.201503 | |
| 614. | Hollauer, Ch., Ceric, H., Selberherr, S.: "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress"; Vortrag: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 16.10.2005 - 21.10.2005; in: "208th ECS Meeting", (2005), ISSN: 1091-8213; Paper-Nr. 734, 1 S. | |
| 613. | Al-Ani, E., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S.: "Three-Dimensional State-Of-The-Art Topography Simulation"; Vortrag: European Simulation and Modeling Conference (ESMC), Porto; 24.10.2005 - 26.10.2005; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; S. 430 - 432. | |
| 612. | Holzer, S., Hollauer, Ch., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., Selberherr, S.: "Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis"; Poster: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 620 - 623. | |
| 611. | Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S.: "Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 12.09.2005 - 16.09.2005; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Cdrom Isbn: 0-7803-9204-3 (2005), ISBN: 0-7803-9203-5; S. 93 - 96. | |
| 610. | Pourfath, M., Gehring, A., Cheong, B.-H., Park, W.J., Kosina, H., Selberherr, S.: "Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration"; Vortrag: The Nanotechnology Conference and Trade Show, Anaheim; 08.05.2005 - 12.05.2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; S. 128 - 131. | |
| 609. | Heitzinger, C., Sheikholeslami, A., Fugger, J., Häberlen, O., Leicht, M., Selberherr, S.: "A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm"; Vortrag: Meeting of the Electrochemical Society, Electrochemical Processing in ULSI and MEMS, San Antonio; 09.05.2004 - 13.05.2004; in: "205th ECS Meeting", (2004), S. 132 - 142. | |
| 608. | Entner, R., Gehring, A., Grasser, T., Selberherr, S.: "A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures"; Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 114 - 117. | |
| 607. | Grasser, T., Kosik, R., Jungemann, C., Kosina, H., Meinerzhagen, B., Selberherr, S.: "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 36 - 37. https://doi.org/10.1109/IWCE.2004.1407308 | |
| 606. | Ayalew, T., Grasser, T., Kosina, H., Selberherr, S.: "Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 92 - 93. | |
| 605. | Ayalew, T., Grasser, T., Kosina, H., Selberherr, S.: "Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 295 - 298. https://doi.org/10.1007/978-3-7091-0624-2_69 | |
| 604. | Heitzinger, C., Ringhofer, Ch., Ahmed, S., Vasileska, D.: "Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions"; Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu; 03.10.2004 - 08.10.2004; in: "Proc. 206th Meeting of the Electrochemical Society", (2004). | |
| 603. | Kosina, H.: "Advanced Transport Models for Nanodevices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (eingeladen); 02.09.2004 - 04.09.2004; in: "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), S. 35. | |
| 602. | Grasser, T., Jungemann, C., Kosina, H., Meinerzhagen, B., Selberherr, S.: "Advanced Transport Models for Sub-Micrometer Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (eingeladen); 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 1 - 8. https://doi.org/10.1007/978-3-7091-0624-2_1 | |
| 601. | Palankovski, V., Selberherr, S.: "Analysis of High Speed Heterostructure Devices"; Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 16.05.2004 - 19.05.2004; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; S. 115 - 122. https://doi.org/10.1109/ICMEL.2004.1314567 | |
| 600. | Wessner, W., Hollauer, Ch., Hössinger, A., Selberherr, S.: "Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 165 - 168. https://doi.org/10.1007/978-3-7091-0624-2_39 | |
| 599. | Wagner, S., Grasser, T., Selberherr, S.: "Benchmarking Linear Solvers with Semiconductor Simulation Examples"; Vortrag: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 30.06.2004 - 02.07.2004; in: "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 S. | |
| 598. | Wittmann, R., Hössinger, A., Selberherr, S.: "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe"; Vortrag: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 03.10.2004 - 08.10.2004; in: "206th ECS Meeting", (2004), ISBN: 1-56677-420-9; S. 181 - 192. | |
| 597. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: "Concepts and Implementation of an Advanced Equation Assembly Module"; Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 18.07.2004 - 21.07.2004; in: "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2; S. 150 - 155. | |
| 596. | Kosina, H., Selberherr, S.: "Device Simulation Demands of Upcoming Microelectronic Devices"; Vortrag: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba (eingeladen); 17.12.2004 - 22.12.2004; in: "Extended Abstracts of WOFE 2004", (2004), S. 6. | |
| 595. | Heitzinger, C., Ringhofer, Ch., Ahmed, S., Vasileska, D.: "Efficient Simulation of the Full Coulomb Interaction in Three Dimensions"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 24 - 25. https://doi.org/10.1109/IWCE.2004.1407300 | |
| 594. | Ayalew, T., Gehring, A., Grasser, T., Selberherr, S.: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 04.10.2004 - 08.10.2004. | |
| 593. | Gehring, A., Selberherr, S.: "Evolution of Current Transport Models for Engineering Applications"; Vortrag: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA (eingeladen); 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 20 - 21. https://doi.org/10.1109/IWCE.2004.1407298 | |
| 592. | Hössinger, A., Minixhofer, R., Selberherr, S.: "Full Three-Dimensional Analysis of a Non-Volatile Memory Cell"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 129 - 132. https://doi.org/10.1007/978-3-7091-0624-2_31 | |
| 591. | Gehring, A., Selberherr, S.: "Gate Current Modeling for MOSFETs"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana (eingeladen); 03.11.2004 - 05.11.2004; in: "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5; S. 1 - 8. | |
| 590. | Gehring, A., Selberherr, S.: "Gate Leakage Models for Device Simulation"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (eingeladen); 18.10.2004 - 21.10.2004; in: "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (Hrg.); IEEE Press, Volume II (2004), ISBN: 0-7803-8511-x; S. 971 - 976. | |
| 589. | Palankovski, V., Dhar, S., Kosina, H., Selberherr, S.: "Improved Carrier Transport in Strained Si/Ge Devices"; Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi (eingeladen); 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S. | |
| 588. | Pourfath, M., Ungersböck, E., Gehring, A., Cheong, B.-H., Park, W., Kosina, H., Selberherr, S.: "Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 21.09.2004 - 23.09.2004; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; S. 429 - 432. | |
| 587. | Wessner, W., Wagner, S., Grasser, T., Selberherr, S.: "Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations"; Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi; 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S. | |
| 586. | Wagner, S., Grasser, T., Selberherr, S.: "Mixed-Mode Device and Circuit Simulation"; Vortrag: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin (eingeladen); 24.06.2004 - 26.06.2004; in: "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7; S. 36 - 41. | |
| 585. | Kosina, H., Palankovski, V.: "Mobility Enhancement in Strained CMOS Devices"; Vortrag: Symposium on Nano Device Technology (SNDT), Hsinchu (eingeladen); 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 101 - 105. | |
| 584. | Dhar, S., Kosina, H., Palankovski, V., Ungersböck, E., Selberherr, S.: "Modeling of Electron Mobility in Strained Si Devices"; Vortrag: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 25.11.2004 - 26.11.2004; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; S. 793 - 796. https://doi.org/10.13140/2.1.1839.7126 | |
| 583. | Gehring, A., Selberherr, S.: "Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 05.07.2004 - 08.07.2004; in: "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7; S. 61 - 64. | |
| 582. | Wittmann, R., Hössinger, A., Selberherr, S.: "Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 169 - 172. https://doi.org/10.1007/978-3-7091-0624-2_40 | |
| 581. | Pourfath, M., Ungersböck, E., Gehring, A., Park, W., Cheong, B.-H., Kosina, H., Selberherr, S.: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 237 - 238. https://doi.org/10.1109/IWCE.2004.1407414 | |
| 580. | Kim, S.-C., Bahng, W., Kim, N.-K., Ayalew, T., Grasser, T., Selberherr, S.: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 492 - 493. | |
| 579. | Ayalew, T., Wagner, S., Grasser, T., Selberherr, S.: "Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 76 - 77. | |
| 578. | Palankovski, V., Selberherr, S.: "Numerical Simulation of Selected Semiconductor Devices"; Vortrag: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 122 - 125. https://doi.org/10.1109/ISSE.2004.1490390 | |
| 577. | Gehring, A., Selberherr, S.: "On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 25 - 28. https://doi.org/10.1007/978-3-7091-0624-2_6 | |
| 576. | Heitzinger, C., Ringhofer, Ch., Ahmed, S., Vasileska, D.: "On the Efficient Simulation of Electron-Electron Interactions in Nanoscale MOSFETs"; Poster: Trends in Nanotechnology Conference (TNT), Segovia; 13.09.2004 - 17.09.2004; in: "Proceedings Trends in Nanotechnology 2004", (2004). | |
| 575. | Kosik, R., Grasser, T., Entner, R., Dragosits, K.: "On the Highest Order Moment Closure Problem"; Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; S. 118 - 120. | |
| 574. | Grasser, T., Kosina, H., Selberherr, S.: "On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 109 - 112. https://doi.org/10.1007/978-3-7091-0624-2_26 | |
| 573. | Holzer, S., Sheikholeslami, A., Wagner, S., Heitzinger, C., Grasser, T., Selberherr, S.: "Optimization and Inverse Modeling for TCAD Applications"; Vortrag: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 113 - 116. | |
| 572. | Ungersböck, E., Pourfath, M., Gehring, A., Kosina, H., Cheong, B.-H., Selberherr, S.: "Optimization of Carbon Nanotube Field Effect Transistors"; Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 12.05.2004 - 13.05.2004; in: "Proceedings of the Symposium on Nano Device Technology", (2004), S. 117 - 120. | |
| 571. | Pourfath, M., Ungersböck, E., Gehring, A., Cheong, B.-H., Park, W., Kosina, H., Selberherr, S.: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Vortrag: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 13.09.2004 - 17.09.2004; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), S. 201. | |
| 570. | Wagner, S., Grasser, T., Selberherr, S.: "Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 351 - 354. https://doi.org/10.1007/978-3-7091-0624-2_83 | |
| 569. | Wagner, S., Grasser, T., Selberherr, S.: "Physical Modeling of Semiconductor Devices for Microwave Applications"; Vortrag: Asia Pacific Microwave Conference (APMC), New Delhi (eingeladen); 15.12.2004 - 18.12.2004; in: "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 S. | |
| 568. | Ayalew, T., Kim, S., Grasser, T., Selberherr, S.: "SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode""; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 31.08.2004 - 04.09.2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), S. 476 - 477. | |
| 567. | Ceric, H., Sabelka, R., Holzer, S., Wessner, W., Wagner, S., Grasser, T., Selberherr, S.: "The Evolution of the Resistance and Current Density During Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 331 - 334. https://doi.org/10.1007/978-3-7091-0624-2_78 | |
| 566. | Pourfath, M., Ungersböck, E., Gehring, A., Cheong, B.-H., Kosina, H., Selberherr, S.: "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 02.09.2004 - 04.09.2004; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; S. 149 - 152. https://doi.org/10.1007/978-3-7091-0624-2_35 | |
| 565. | Sheikholeslami, A., Heitzinger, C., Al-Ani, E., Heinzl, R., Grasser, T., Selberherr, S.: "Three-Dimensional Surface Evolution Using a Level Set Method"; Poster: Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris; 01.12.2004; in: "Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS)", (2004). | |
| 564. | Sheikholeslami, A., Heitzinger, C., Badrieh, F., Puchner, H., Selberherr, S.: "Three-Dimensional Topography Simulation Based on a Level Set Method"; Vortrag: International Spring Seminar on Electronics Technology (ISSE), Sofia; 13.05.2004 - 16.05.2004; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 2 (2004), ISBN: 0-7803-8422-9; S. 263 - 265. | |
| 563. | Sheikholeslami, A., Heitzinger, C., Grasser, T., Selberherr, S.: "Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method"; Vortrag: International Conference on Microelectronics (MIEL), Nis; 16.05.2004 - 19.05.2004; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; S. 241 - 244. https://doi.org/10.1109/ICMEL.2004.1314606 | |
| 562. | Gehring, A., Kosina, H.: "Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 24.10.2004 - 27.10.2004; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; S. 227 - 228. https://doi.org/10.1109/IWCE.2004.1407409 | |
| 561. | Wagner, S., Palankovski, V., Grasser, T., Röhrer, G., Selberherr, S.: "A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"; Vortrag: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 83 - 84. | |
| 560. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: "A Generally Applicable Approach for Advanced Equation Assembling"; Vortrag: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 03.11.2003 - 05.11.2003; in: "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6; S. 494 - 499. | |
| 559. | Sheikholeslami, A., Heitzinger, C., Selberherr, S.: "A Method for Generating Structurally Aligned Grids Using a Level Set Approach"; Vortrag: European Simulation Multiconference (ESM), Nottingham; 09.06.2003 - 11.06.2003; in: "Proc. 17th European Simulation Multiconference: Modelling and Simulation", (2003), ISBN: 3-936150-25-7; S. 496 - 501. | |
| 558. | Heitzinger, C., Sheikholeslami, A., Park, J.M., Selberherr, S.: "A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 457 - 460. | |
| 557. | Kosina, H., Nedjalkov, M., Selberherr, S.: "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations"; Vortrag: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), S. 35 - 36. | |
| 556. | Hössinger, A., Cervenka, J., Selberherr, S.: "A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 259 - 262. https://doi.org/10.1109/SISPAD.2003.1233686 | |
| 555. | Nedjalkov, M., Kosina, H., Selberherr, S.: "A Quasi-Particle Model of the Electron - Wigner Potential Interaction"; Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 28.07.2003 - 01.08.2003; in: "Proceedings HCIS-13", (2003), S. Th 5-1. | |
| 554. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: "A Simulator Module for Advanced Equation Assembling"; Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 55 - 64. | |
| 553. | Kosina, H., Nedjalkov, M., Selberherr, S.: "A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 24. | |
| 552. | Nedjalkov, M., Kosina, H., Selberherr, S.: "A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 35 - 36. | |
| 551. | Smirnov, S., Kosina, H., Nedjalkov, M., Selberherr, S.: "A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 04.06.2003 - 08.06.2003; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), S. 40 - 41. | |
| 550. | Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: "Advanced Equation Assembling Techniques for Numerical Simulators"; Vortrag: European Simulation and Modeling Conference (ESMC), Naples; 27.10.2003 - 29.10.2003; in: "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x; S. 390 - 394. | |
| 549. | Heitzinger, C., Hössinger, A., Selberherr, S.: "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; S. 702 - 711. | |
| 548. | Gehring, A., Grasser, T., Kosina, H., Selberherr, S.: "An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; S. 48 - 51. | |
| 547. | Ungersböck, E., Gehring, A., Kosina, H., Selberherr, S., Cheong, B.-H., Choi, W. B.: "Analysis of Carrier Transport in Carbon Nanotube FET Devices"; Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 1059 - 1061. | |
| 546. | Gehring, A., Kosina, H., Selberherr, S.: "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method"; Vortrag: International Workshop on Computational Electronics (IWCE), Rome, Italy; 25.05.2003 - 28.05.2003; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2003), S. 105 - 106. | |
| 545. | Wessner, W., Ceric, H., Heitzinger, C., Hössinger, A., Selberherr, S.: "Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric"; Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 41 - 46. | |
| 544. | Wessner, W., Hössinger, A., Selberherr, S.: "Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 523 - 528. | |
| 543. | Sheikholeslami, A., Heitzinger, C., Selberherr, S., Badrieh, F., Puchner, H.: "Capacitances in the Backend of a 100nm CMOS Process and their Predictive Simulation"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 481 - 486. | |
| 542. | Palankovski, V., Selberherr, S.: "Challenges in Modeling of High-Speed Electron Devices"; Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras (eingeladen); 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 45 - 50. | |
| 541. | Grasser, T.: "Closure Relations for Macroscopic Transport Models"; Vortrag: International Semiconductor Device Research Symposium (ISDRS), Washington (eingeladen); 10.12.2003 - 12.12.2003; in: "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4; S. 504 - 505. | |
| 540. | Kosina, H., Klimeck, G., Nedjalkov, M., Selberherr, S.: "Comparison of Numerical Quantum Device Models"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 171 - 174. https://doi.org/10.1109/SISPAD.2003.1233664 | |
| 539. | Gehring, A., Kosina, H., Grasser, T., Selberherr, S.: "Consistent Comparison of Tunneling Models for Device Simulation"; Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; S. 131 - 134. | |
| 538. | Palankovski, V., Selberherr, S.: "Critical Modeling Issues of SiGe Semiconductor Devices"; Vortrag: Symposium on Diagnostics and Yield, Warsaw (eingeladen); 22.06.2003 - 25.06.2003; in: "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), S. 1 - 11. | |
| 537. | Cervenka, J., Hössinger, A., Minixhofer, R., Grasser, T., Selberherr, S.: "Dreidimensionale Modellierung Elektronischer Bauteile"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 377 - 382. | |
| 536. | Wessner, W., Heitzinger, C., Hössinger, A., Selberherr, S.: "Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 109 - 112. https://doi.org/10.1109/SISPAD.2003.1233649 | |
| 535. | Gehring, A., Harasek, S., Bertagnolli, E., Selberherr, S.: "Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 473 - 476. | |
| 534. | Holzer, S., Minixhofer, R., Heitzinger, C., Fellner, J., Grasser, T., Selberherr, S.: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures"; Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 24.09.2003 - 26.09.2003; in: "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202; S. 263 - 268. | |
| 533. | Heitzinger, C., Sheikholeslami, A., Badrieh, F., Puchner, H., Selberherr, S.: "Feature Scale Simulation of Advanced Etching Processes"; Vortrag: Meeting of the Electrochemical Society, Physical Electrochemistry, Orlando; 12.10.2003 - 16.10.2003; in: "204th ECS Meeting", (2003), ISBN: 1-56677-398-9; S. 1259. | |
| 532. | Badrieh, F., Puchner, H., Heitzinger, C., Sheikholeslami, A., Selberherr, S.: "From Feature Scale Simulation to Backend Simulation for a 100nm CMOS Process"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 441 - 444. | |
| 531. | Park, J.M., Grasser, T., Selberherr, S.: "High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length"; Vortrag: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; S. 273 - 282. | |
| 530. | Wittmann, R., Hössinger, A., Selberherr, S.: "Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Vortrag: European Simulation Symposium (ESS), Delft; 26.10.2003 - 29.10.2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; S. 35 - 40. | |
| 529. | Ayalew, T., Gehring, A., Park, J.M., Grasser, T., Selberherr, S.: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003. | |
| 528. | Dragosits, K., Palankovski, V., Selberherr, S.: "Mobility Modeling in Presence of Quantum Effects"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 271 - 274. https://doi.org/10.1109/SISPAD.2003.1233689 | |
| 527. | Palankovski, V., Selberherr, S.: "Modeling High Speed Semiconductor Devices of Modern Communication Systems"; Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 27.07.2003 - 30.07.2003; in: "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9; S. 97 - 102. | |
| 526. | Ayalew, T., Park, J.M., Gehring, A., Grasser, T., Selberherr, S.: "Modeling and Simulation of SiC MOSFETs"; Vortrag: International Conference on Applied Modelling and Simulation, Marbella; 03.09.2003 - 05.09.2003; in: "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9; S. 552 - 556. | |
| 525. | Gehring, A., Jimenez-Molinos, F., Kosina, H., Palma, A., Gamiz, F., Selberherr, S.: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 07.10.2003 - 10.10.2003. | |
| 524. | Ceric, H., Hössinger, A., Binder, T., Selberherr, S.: "Modeling of Segregation on Material Interfaces by Means of the Finite Element Method"; Vortrag: International Symposium on Mathematical Modeling (MATHMOD), Wien; 05.02.2003 - 07.02.2003; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; S. 139 - 145. | |
| 523. | Gurov, T.V., Nedjalkov, M., Kosina, H.: "Novel Monte Carlo Algorithms for Ultrafast Transport Phenomena in Semiconductors"; Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "Book of Abstracts MCM-2003", (2003), S. 10. | |
| 522. | Palankovski, V., Wagner, S., Selberherr, S.: "Numerical Analysis of Compound Semiconductor RF Devices"; Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego (eingeladen); 09.11.2003 - 12.11.2003; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2003), ISBN: 0-7803-7833-4; S. 107 - 110. https://doi.org/10.1109/GAAS.2003.1252374 | |
| 521. | Wagner, S., Palankovski, V., Quay, R., Grasser, T., Selberherr, S.: "Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs"; Vortrag: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 16.12.2003 - 20.12.2003; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; S. 836 - 838. | |
| 520. | Wagner, S., Palankovski, V., Röhrer, G., Grasser, T., Selberherr, S.: "Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren"; Poster: Informationstagung Mikroelektronik (ME), Wien; 01.10.2003 - 02.10.2003; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; S. 383 - 388. | |
| 519. | Nedjalkov, M., Atanassov, E., Kosina, H., Selberherr, S.: "Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation"; Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), S. 6. | |
| 518. | Minixhofer, R., Holzer, S., Heitzinger, C., Fellner, J., Grasser, T., Selberherr, S.: "Optimization of Electrothermal Material Parameters Using Inverse Modeling"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 363 - 366. | |
| 517. | Palankovski, V., Selberherr, S.: "Optimization of SiGe HBTs for Industrial Applications"; Vortrag: International SiGe Technology and Device Meeting (ISTDM), Nagoya (eingeladen); 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 267 - 268. | |
| 516. | Heitzinger, C., Sheikholeslami, A., Puchner, H., Selberherr, S.: "Predictive Simulation of Void Formation During the Deposition of Silicon Nitride and Silicon Dioxide Films"; Vortrag: Meeting of the Electrochemical Society (ECS), Paris; 26.04.2003 - 02.05.2003; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; S. 356 - 365. | |
| 515. | Kosina, H., Nedjalkov, M., Selberherr, S.: "Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 23.02.2003 - 27.02.2003; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; S. 190 - 193. | |
| 514. | Grasser, T., Kosina, H., Selberherr, S.: "Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 63 - 66. https://doi.org/10.1109/SISPAD.2003.1233638 | |
| 513. | Palankovski, V., Röhrer, G., Grasser, T., Smirnov, S., Kosina, H., Selberherr, S.: "Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs"; Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 15.01.2003 - 17.01.2003; in: "First International SiGe Technology and Device Meeting", (2003), S. 97 - 98. | |
| 512. | Palankovski, V., Selberherr, S.: "Rigorous Modeling of High-Speed Semiconductor Devices"; Vortrag: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (eingeladen); 16.12.2003 - 18.12.2003; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4; S. 127 - 132. https://doi.org/10.1109/EDSSC.2003.1283498 | |
| 511. | Grasser, T., Kosina, H., Selberherr, S.: "Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function"; Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 20.03.2003 - 21.03.2003; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; S. 105 - 108. | |
| 510. | Ayalew, T., Park, J.M., Gehring, A., Grasser, T., Selberherr, S.: "Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 581 - 584. | |
| 509. | Ungersböck, E., Gehring, A., Kosina, H., Selberherr, S., Cheong, B.-H., Choi, W. B.: "Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 411 - 414. | |
| 508. | Hollauer, Ch., Ceric, H., Selberherr, S.: "Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Estoril; 16.09.2003 - 18.09.2003; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; S. 383 - 386. | |
| 507. | Kosina, H., Nedjalkov, M., Selberherr, S.: "Solution of the Space-Dependent Wigner Equation Using a Particle Model"; Vortrag: Seminar on Monte Carlo Methods (MCM), Berlin; 15.09.2003 - 19.09.2003; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), S. 6. | |
| 506. | Jimenez-Molinos, F., Palma, A., Gehring, A., Gamiz, F., Kosina, H., Selberherr, S.: "Static and Transient Simulation of Inelastic Trap-Assisted Tunneling"; Vortrag: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 16.10.2003 - 17.10.2003; in: "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1; S. 65 - 68. | |
| 505. | Wittmann, R., Hössinger, A., Selberherr, S.: "Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Vortrag: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; S. 159 - 163. | |
| 504. | Smirnov, S., Kosina, H., Selberherr, S.: "Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 03.09.2003 - 05.09.2003; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; S. 55 - 58. https://doi.org/10.1109/SISPAD.2003.1233636 | |
| 503. | Hollauer, Ch., Ceric, H., Selberherr, S.: "Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method"; Vortrag: Industrial Simulation Conference (ISC), Valencia; 09.06.2003 - 11.06.2003; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; S. 154 - 158. | |
| 502. | Kosina, H.: "VMC: a Code for Monte Carlo Simulation of Quantum Transport"; Vortrag: MEL-ARI/NID Workshop, Cork; 23.06.2003 - 25.06.2003; in: "Proc. 12th MEL-ARI/NID Workshop", (2003). | |
| 501. | Heitzinger, C., Selberherr, S.: "A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution"; Vortrag: International Conference on Microelectronics (MIEL), Nis; 12.05.2002 - 15.05.2002; in: "Proceedings of the International Conference on Microelectronics (MIEL)", 2 (2002), S. 431 - 434. https://doi.org/10.1109/MIEL.2002.1003291 | |
| 500. | Gehring, A., Grasser, T., Kosina, H., Selberherr, S.: "A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 235 - 238. https://doi.org/10.1109/SISPAD.2002.1034560 | |
| 499. | Kosina, H., Nedjalkov, M., Selberherr, S.: "A Particle Model for Wigner Transport through Tunneling Structures"; Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 136 - 139. | |
| 498. | Binder, T., Ceric, H., Hössinger, A., Selberherr, S.: "A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 183 - 186. https://doi.org/10.1109/SISPAD.2002.1034547 | |
| 497. | Ceric, H., Selberherr, S.: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 253 - 256. https://doi.org/10.1109/SISPAD.2002.1034566 | |
| 496. | Grasser, T., Kosina, H., Heitzinger, C., Selberherr, S.: "An Impact Ionization Model Including an Explicit Cold Carrier Population"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 572 - 575. | |
| 495. | Klima, R., Grasser, T., Selberherr, S.: "Controlling Scheme of the Device Simulator MINIMOS-NT"; Vortrag: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; S. 80 - 84. | |
| 494. | Palankovski, V., Wagner, S., Grasser, T., Schultheis, R., Selberherr, S.: "Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation"; Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 07.10.2002 - 10.10.2002; in: "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3; S. 303 - 306. | |
| 493. | Gopinath, V., Aronowitz, S., Palankovski, V., Selberherr, S.: "Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior"; Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 631 - 634. https://doi.org/10.1109/ESSDERC.2002.195010 | |
| 492. | Ceric, H., Selberherr, S.: "Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects"; Vortrag: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 08.07.2002 - 12.07.2002; in: "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9; S. 140 - 144. | |
| 491. | Fleischmann, P., Selberherr, S.: "Enhanced Advancing Front Delaunay Meshing in TCAD"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 99 - 102. https://doi.org/10.1109/SISPAD.2002.1034526 | |
| 490. | Park, J.M., Klima, R., Selberherr, S.: "High-Voltage Lateral Trench Gate SOI LDMOSFETs"; Poster: International Seminar on Power Semiconductors (ISPS), Prague; 04.09.2002 - 06.09.2002; in: "Proceedings ISPS 2002", (2002), ISBN: 80-01-02595-0; S. 241 - 244. | |
| 489. | Minixhofer, R., Röhrer, G., Selberherr, S.: "Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication"; Vortrag: European Simulation Symposium (ESS), Dresden; 23.10.2002 - 26.10.2002; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; S. 70 - 74. | |
| 488. | Smirnov, S., Kosina, H., Selberherr, S.: "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 29 - 32. https://doi.org/10.1109/SISPAD.2002.1034509 | |
| 487. | Park, J.M., Klima, R., Selberherr, S.: "Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 283 - 286. | |
| 486. | Rodriguez-Torres, R., Gutierrez, E., Sarmiento, A., Selberherr, S.: "Macro-Modeling for MOS Device Simulation"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Oranjestad; 17.04.2002 - 19.04.2002; in: "Proceedings of the ICCDCS 2002", D012 (2002), ISBN: 0-7803-7380-4; S. 1 - 5. | |
| 485. | Grasser, T., Gehring, A., Selberherr, S.: "Macroscopic Transport Models for Microelectronics Devices"; Vortrag: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (eingeladen); 14.07.2002 - 18.07.2002; in: "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1; S. 223 - 228. | |
| 484. | Gehring, A., Grasser, T., Selberherr, S.: "Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 560 - 563. | |
| 483. | Heitzinger, C., Selberherr, S., Fugger, J., Häberlen, O.: "On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 347 - 350. | |
| 482. | Heitzinger, C., Selberherr, S.: "On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes Using the Level Set Method"; Vortrag: European Simulation Multiconference (ESM), Darmstadt; 03.06.2002 - 05.06.2002; in: "16th European Simulation Multiconference", (2002), ISBN: 90-77039-07-4; S. 653 - 660. | |
| 481. | Heitzinger, C., Sheikholeslami, A., Selberherr, S.: "Predictive Simulation of Etching and Deposition Processes Using the Level Set Method"; Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Prague; 13.10.2002 - 17.10.2002; in: "ChiPPS-2002 Challenges in Predictive Process Simulation", (2002), S. 65 - 66. | |
| 480. | Grasser, T., Gehring, A., Selberherr, S.: "Recent Advances in Transport Modeling for Miniaturized CMOS Devices"; Vortrag: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba (eingeladen); 17.04.2002 - 19.04.2002; in: "Proceedings of the ICCDCS 2002", D027 (2002), ISBN: 0-7803-7380-4; S. 1 - 8. | |
| 479. | Heitzinger, C., Fugger, J., Häberlen, O., Selberherr, S.: "Simulation and Inverse Modeling of TEOS Deposition Processes Using a Fast Level Set Method"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 191 - 194. https://doi.org/10.1109/SISPAD.2002.1034549 | |
| 478. | Gehring, A., Jimenez-Molinos, F., Palma, A., Kosina, H., Selberherr, S.: "Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current"; Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), München; 07.03.2002 - 08.03.2002; in: "3rd European Workshop on Ultimate Integration of Silicon", (2002), S. 15 - 18. | |
| 477. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: "Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 195 - 198. https://doi.org/10.1109/SISPAD.2002.1034550 | |
| 476. | Ceric, H., Selberherr, S.: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Rimini; 07.10.2002 - 11.10.2002. | |
| 475. | Wagner, S., Palankovski, V., Grasser, T., Schultheis, R., Selberherr, S.: "Small-Signal Analysis and Direct S-Parameter Extraction"; Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 18.11.2002 - 19.11.2002; in: "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0; S. 50 - 55. https://doi.org/10.1109/EDMO.2002.1174929 | |
| 474. | Nedjalkov, M., Kosina, H., Selberherr, S.: "Stochastic Interpretation of the Wigner Transport in Nanostructures"; Vortrag: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 08.12.2002 - 13.12.2002; in: "Fourth International Conference on Low Dimensional Structures and Devices", (2002), S. 5. | |
| 473. | Klima, R., Grasser, T., Selberherr, S.: "The Control System of the Device Simulator MINIMOS-NT"; Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 281 - 284. | |
| 472. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S., Linton, T., Singh, S., Yu, S., Giles, M.: "The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 21.04.2002 - 25.04.2002; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; S. 544 - 547. | |
| 471. | Palankovski, V., Klima, R., Schultheis, R., Selberherr, S.: "Three-Dimensional Analysis of Leakage Currents in III-V HBTs"; Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Monterey; 20.10.2002 - 23.10.2002; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2002), ISBN: 0-7803-7447-9; S. 229 - 232. https://doi.org/10.1109/GAAS.2002.1049066 | |
| 470. | Rodriguez-Torres, R., Gutierrez, E., Klima, R., Selberherr, S.: "Three-Dimensional Analysis of a MAGFET at 300 K and 77 K"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Florence; 24.09.2002 - 26.09.2002; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; S. 151 - 154. | |
| 469. | Gehring, A., Kosina, H., Selberherr, S.: "Transmission Coefficient Estimation for High-k Gate Stack Evaluation"; Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 156 - 159. | |
| 468. | Dragosits, K., Palankovski, V., Selberherr, S.: "Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices"; Vortrag: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 25.09.2002 - 28.09.2002; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; S. 113 - 116. | |
| 467. | Nedjalkov, M., Kosik, R., Kosina, H., Selberherr, S.: "Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 04.09.2002 - 06.09.2002; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; S. 187 - 190. https://doi.org/10.1109/SISPAD.2002.1034548 | |
| 466. | Harlander, C., Sabelka, R., Selberherr, S.: "A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 254 - 257. https://doi.org/10.1007/978-3-7091-6244-6_56 | |
| 465. | Kosina, H., Kosik, R., Nedjalkov, M.: "A Hierarchy of Kinetic Equations for Quantum Device Simulation"; Vortrag: Conference on Applied Mathematics in our Changing World, Berlin (eingeladen); 02.09.2001 - 06.09.2001; in: "Proceedings First SIAM-EMS Conference on Applied Mathematics in our Changing World", (2001), S. 24. | |
| 464. | Palankovski, V., Belova, N., Grasser, T., Puchner, H., Aronowitz, S., Selberherr, S.: "A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 428 - 431. https://doi.org/10.1007/978-3-7091-6244-6_99 | |
| 463. | Grasser, T., Kosina, H., Gritsch, M., Selberherr, S.: "A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 474 - 477. | |
| 462. | Binder, T., Heitzinger, C., Selberherr, S.: "A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 466 - 469. | |
| 461. | Quay, R., Schultheis, R., Kellner, W., Palankovski, V., Selberherr, S.: "A Review of Modeling Issues for RF Heterostructure Device Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 432 - 435. https://doi.org/10.1007/978-3-7091-6244-6_100 | |
| 460. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: "A Simulation Study of Partially Depleted SOI MOSFETs"; Vortrag: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 25.03.2001 - 29.03.2001; in: "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1; S. 181 - 186. | |
| 459. | Nedjalkov, M., Kosina, H., Kosik, R., Selberherr, S.: "A Space Dependent Wigner Equation Including Phonon Interaction"; Vortrag: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), S. 4. | |
| 458. | Nedjalkov, M., Kosik, R., Kosina, H., Selberherr, S.: "A Wigner Equation for the Nanometer and Femtosecond Transport Regime"; Vortrag: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; S. 277 - 281. https://doi.org/10.1109/NANO.2001.966433 | |
| 457. | Grasser, T., Kosina, H., Gritsch, M., Selberherr, S., Puchner, H., Aronowitz, S.: "Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; S. 215 - 218. | |
| 456. | Hössinger, A., Binder, T., Pyka, W., Selberherr, S.: "Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 424 - 427. https://doi.org/10.1007/978-3-7091-6244-6_98 | |
| 455. | Kosina, H., Nedjalkov, M., Selberherr, S.: "An Event Bias Technique for Monte Carlo Device Simulation"; Vortrag: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), S. 141 - 143. | |
| 454. | Grasser, T., Kosina, H., Selberherr, S.: "An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 46 - 49. https://doi.org/10.1007/978-3-7091-6244-6_10 | |
| 453. | Kosina, H., Gritsch, M., Grasser, T., Linton, T., Yu, S., Giles, M., Selberherr, S.: "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 15.09.2001 - 18.09.2001; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), S. 67. | |
| 452. | Dragosits, K., Ponomarev, Y., Dachs, C., Selberherr, S.: "Analysis of Ultra Short MOSFETs with High-K Gate Dielectrics"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 412 - 415. https://doi.org/10.1007/978-3-7091-6244-6_95 | |
| 451. | Wolf, A., Grasser, T., Selberherr, S.: "Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT"; Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 314 - 318. | |
| 450. | Nedjalkov, M., Grasser, T., Kosina, H., Selberherr, S.: "Boundary Condition Models for Terminal Current Fluctuations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 152 - 155. https://doi.org/10.1007/978-3-7091-6244-6_34 | |
| 449. | Klima, R., Grasser, T., Selberherr, S.: "Controlling TCAD Applications with an Object-Oriented Dynamic Database"; Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 161 - 165. | |
| 448. | Selberherr, S.: "Current Transport Models for Engineering Applications"; Vortrag: Advanced Research Workshop on Future Trends in Microelectronics, Ile de Bendor; 25.06.2001 - 29.06.2001; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: The Nano Millenium", (2001), ISBN: 0-471-21247-4; S. 54. | |
| 447. | Gehring, A., Grasser, T., Selberherr, S.: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in: "2001 International Semiconductor Device Research Symposium", (2001), S. 260 - 263. | |
| 446. | Gurov, T.V., Nedjalkov, M., Whitlock, P.A., Kosina, H., Selberherr, S.: "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field"; Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Santa Fe; 27.08.2001 - 31.08.2001; in: "Proceedings 12th International Conference on Nonequilibrium Carrier Dynamics", (2001), S. 27. | |
| 445. | Cervenka, J., Knaipp, M., Hössinger, A., Selberherr, S.: "Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 408 - 411. https://doi.org/10.1007/978-3-7091-6244-6_94 | |
| 444. | Grasser, T., Kosina, H., Selberherr, S.: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation"; Vortrag: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko (eingeladen); 12.02.2001 - 17.02.2001; in: "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8; S. 19 - 30. | |
| 443. | Grasser, T., Kosina, H., Selberherr, S.: "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 54 - 57. https://doi.org/10.1007/978-3-7091-6244-6_12 | |
| 442. | Grasser, T., Selberherr, S.: "Limitations of Hydrodynamic and Energy-Transport Models"; Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi (eingeladen); 11.12.2001 - 15.12.2001; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (Hrg.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; S. 584 - 591. | |
| 441. | Pyka, W., Heitzinger, C., Tamaoki, N., Takase, T., Ohmine, T., Selberherr, S.: "Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 124 - 127. https://doi.org/10.1007/978-3-7091-6244-6_27 | |
| 440. | Nedjalkov, M., Kosina, H., Selberherr, S.: "Monte Carlo Algorithms for Stationary Device Simulation"; Vortrag: Seminar on Monte Carlo Methods (MCM), Salzburg; 10.09.2001 - 14.09.2001; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), S. 58 - 59. | |
| 439. | Kosina, H., Nedjalkov, M., Selberherr, S.: "Monte Carlo Analysis of the Small-Signal Response of Charge Carriers"; Vortrag: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06.06.2001 - 10.06.2001; in: "Abstracts of the 3rd International Conference on Large-Scale Scientific Computations", (2001), S. A-23. | |
| 438. | Park, J.M., Grasser, T., Kosina, H., Selberherr, S.: "Numerical Study of Partial-SOI LDMOSFET Power Devices"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 05.12.2001 - 07.12.2001; in: "2001 International Semiconductor Device Research Symposium", (2001), S. 114 - 117. | |
| 437. | Heitzinger, C., Selberherr, S.: "Optimization for TCAD Purposes Using Bernstein Polynomials"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 420 - 423. https://doi.org/10.1007/978-3-7091-6244-6_97 | |
| 436. | Palankovski, V., Röhrer, G., Wachmann, E., Kraft, J., Löffler, B., Cervenka, J., Quay, R., Grasser, T., Selberherr, S.: "Optimization of High-Speed SiGe HBTs"; Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 15.11.2001 - 16.11.2001; in: "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x; S. 187 - 191. https://doi.org/10.1109/EDMO.2001.974305 | |
| 435. | Cervenka, J., Fleischmann, P., Selberherr, S., Knaipp, M., Unterleitner, F.: "Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 11.09.2001 - 13.09.2001; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; S. 227 - 230. | |
| 434. | Heitzinger, C., Binder, T., Selberherr, S.: "Parallel TCAD Optimization and Parameter Extraction for Computationally Expensive Objective Functions"; Vortrag: European Simulation Multiconference (ESM), Prag; 06.06.2001 - 09.06.2001; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; S. 534 - 538. | |
| 433. | Palankovski, V., Belova, N., Grasser, T., Puchner, H., Aronowitz, S., Selberherr, S.: "Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance"; Vortrag: IEEE Conference on Nanotechnology (NANO), Maui; 28.10.2001 - 30.10.2001; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; S. 201 - 206. https://doi.org/10.1109/NANO.2001.966419 | |
| 432. | Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: "Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model"; Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi; 11.12.2001 - 15.12.2001; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (Hrg.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; S. 664 - 667. | |
| 431. | Grasser, T.: "Simulation of Semiconductor Devices and Circuits at High Frequencies"; Vortrag: GMe Forum 2001, Wien (eingeladen); 05.04.2001 - 06.04.2001; in: "Proceedings of the GMe Forum", (2001), S. 91 - 96. | |
| 430. | Gehring, A., Heitzinger, C., Grasser, T., Selberherr, S.: "TCAD Analysis of Gain Cell Retention Time for SRAM Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 416 - 419. https://doi.org/10.1007/978-3-7091-6244-6_96 | |
| 429. | Grasser, T., Selberherr, S.: "Technology CAD: Device Simulation and Characterization"; Vortrag: Ultra Shallow Junctions Conference, Napa (eingeladen); 22.04.2001 - 26.04.2001; in: "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), S. 4 - 11. | |
| 428. | Harlander, C., Sabelka, R., Selberherr, S.: "Three-Dimensional Electro-Thermal Simulation of Interconnect Structures with Temperature-Dependent Permittivity"; Vortrag: International Intersociety, Electronic Packaging Technical Conference (InterPACK), Kauai; 08.07.2001 - 13.07.2001; in: "The Pacific RIM/International Intersociety, Electronic Packaging Technical/Business Conference & Exhibition", (2001), S. 1 - 2. | |
| 427. | Kosina, H., Nedjalkov, M., Selberherr, S.: "Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 19.03.2001 - 21.03.2001; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; S. 11 - 14. | |
| 426. | Kosina, H., Nedjalkov, M., Selberherr, S.: "Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 05.09.2001 - 07.09.2001; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; S. 140 - 143. https://doi.org/10.1007/978-3-7091-6244-6_31 | |
| 425. | Nedjalkov, M., Kosina, H., Selberherr, S., Dimov, I.: "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors"; Poster: International Workshop on Computational Electronics (IWCE), Glasgow, UK; 22.05.2000 - 25.05.2000; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2000), ISBN: 0-85261-704-6; S. 144 - 145. https://doi.org/10.1109/IWCE.2000.869966 | |
| 424. | Grasser, T., Quay, R., Palankovski, V., Selberherr, S.: "A Global Self-Heating Model for Device Simulation"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 324 - 327. https://doi.org/10.1109/ESSDERC.2000.194780 | |
| 423. | Troger, C., Kosina, H., Selberherr, S.: "A Stable Schrödinger-Poisson Solver to Investigate Quantum Effects in Modern MOSFETs"; Vortrag: Workshop on Ultimate Integration of Silicon (ULIS), Grenoble; 20.01.2000 - 21.01.2000; in: "European Workshop on Ultimate Integration of Silicon", (2000), S. 123 - 126. | |
| 422. | Palankovski, V., Selberherr, S., Quay, R., Schultheis, R.: "Analysis of HBT Behavior After Strong Electrothermal Stress"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 245 - 248. https://doi.org/10.1109/SISPAD.2000.871254 | |
| 421. | Stockinger, M., Selberherr, S.: "Automatic Device Design Optimization with TCAD Frameworks"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego (eingeladen); 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 1 - 6. | |
| 420. | Klima, R., Grasser, T., Binder, T., Selberherr, S.: "Controlling TCAD Applications with a Dynamic Database"; Vortrag: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; S. 103 - 112. | |
| 419. | Palankovski, V., Schultheis, R., Bonacina, A., Selberherr, S.: "Effectiveness of Silicon Nitride Passivation in III-V Based HBTs"; Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), S. 188. | |
| 418. | Grasser, T., Selberherr, S.: "Electro-Thermal Effects in Mixed-Mode Device Simulation"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 10.10.2000 - 14.10.2000; in: "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6; S. 43 - 52. | |
| 417. | Palankovski, V., Selberherr, S.: "III-V Semiconductor Materials in MINIMOS-NT"; Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in: "Abstracts MRS Spring Meeting", (2000), S. 249. | |
| 416. | Pyka, W., Selberherr, S., Sukharev, V.: "Incorporation of Equipment Simulation into Integrated Feature Scale Profile Evolution"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 180 - 183. | |
| 415. | Harlander, C., Sabelka, R., Selberherr, S.: "Inductance Calculation in Interconnect Structures"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 416 - 419. | |
| 414. | Palankovski, V., Quay, R., Selberherr, S.: "Industrial Application of Heterostructure Device Simulation"; Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle (eingeladen); 05.11.2000 - 08.11.2000; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2; S. 117 - 120. https://doi.org/10.1109/GAAS.2000.906305 | |
| 413. | Gritsch, M., Kosina, H., Fischer, C., Selberherr, S.: "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs"; Vortrag: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada; 25.10.2000 - 27.10.2000; in: "Proceedings EUROSOI 2000", (2000), S. 1 - 4. | |
| 412. | Palankovski, V., Schultheis, R., Bonacina, A., Selberherr, S.: "Investigations on the Impact of the InGaP Ledge on HBT-Performance"; Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean See; 29.05.2000 - 02.06.2000; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (2000), ISBN: 0-9703111-0-9; S. 5 - 6. | |
| 411. | Grasser, T., Selberherr, S.: "Mixed-Mode Device Simulation"; Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 14.05.2000 - 17.05.2000; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2000), ISBN: 0-7803-5235-1; S. 35 - 42. https://doi.org/10.1109/ICMEL.2000.840528 | |
| 410. | Binder, T., Selberherr, S.: "Object-Oriented Design Patterns for Process Flow Simulations"; Vortrag: International Conference on Software Engineering and Applications (SEA), Las Vegas; 06.11.2000 - 09.11.2000; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; S. 159 - 166. | |
| 409. | Binder, T., Selberherr, S.: "Object-Oriented Wafer-State Services"; Vortrag: European Simulation Multiconference (ESM), Ghent; 23.05.2000 - 26.05.2000; in: "Proceedings European Simulation Multiconference ESM 2000", (2000), ISBN: 1-56555-204-0; S. 360 - 364. | |
| 408. | Hössinger, A., Langer, E.: "Parallel Monte Carlo Simulation of Ion Implantation"; Vortrag: International Conference on Ion Implantation Technology, Cork (eingeladen); 17.09.2000 - 22.09.2000; in: "Proceedings 13th Intl. Conf. on Ion Implantation Technology", (2000), S. 203 - 208. | |
| 407. | Sabelka, R., Harlander, C., Selberherr, S.: "Propagation of RF Signals in Microelectronic Structures"; Vortrag: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz (eingeladen); 14.05.2000 - 18.05.2000; in: "Abstracts Challenges in Predictive Process Simulation Meeting", (2000), S. 50 - 51. | |
| 406. | Dragosits, K., Selberherr, S.: "Simulation of Ferroelectric Materials with MINIMOS-NT"; Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 24.04.2000 - 28.04.2000; in: "Abstracts MRS Spring Meeting", (2000), S. 249. | |
| 405. | Dragosits, K., Selberherr, S.: "Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT"; Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5; S. 81 - 82. | |
| 404. | Dragosits, K., Selberherr, S.: "Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT"; Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, (2000), ISBN: 3-932434-15-3; S. 1023 - 1026. | |
| 403. | Dragosits, K., Selberherr, S.: "Simulation of Ferroelectric Thin Films"; Poster: International Conference on Defects in Insulating Materials, Johannesburg; 03.04.2000 - 07.04.2000; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), S. 179. | |
| 402. | Quay, R., Massler, H., Kellner, W., Grasser, T., Palankovski, V., Selberherr, S.: "Simulation of Gallium-Arsenide Based High Electron Mobility Transistors"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 74 - 77. https://doi.org/10.1109/SISPAD.2000.871210 | |
| 401. | Quay, R., Palankovski, V., Chertouk, M., Leuther, A., Selberherr, S.: "Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 10.12.2000 - 13.12.2000; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4; S. 186 - 189. https://doi.org/10.1109/IEDM.2000.904289 | |
| 400. | Palankovski, V., Grasser, T., Knaipp, M., Selberherr, S.: "Simulation of Polysilicon Emitter Bipolar Transistors"; Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 11.09.2000 - 13.09.2000; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; S. 608 - 611. https://doi.org/10.1109/ESSDERC.2000.194851 | |
| 399. | Palankovski, V., Selberherr, S.: "State-of-the-art Micro Materials Models in MINIMOS-NT"; Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5; S. 290 - 291. | |
| 398. | Palankovski, V., Selberherr, S.: "State-of-the-art Micro Materials Models in MINIMOS-NT"; Vortrag: International Conference on Micro Materials, Berlin; 17.05.2000 - 19.05.2000; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, Dresden (2000), ISBN: 3-932434-15-3; S. 714 - 717. | |
| 397. | Sabelka, R., Harlander, C., Selberherr, S.: "The State of the Art in Interconnect Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA (eingeladen); 06.09.2000 - 08.09.2000; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; S. 6 - 11. https://doi.org/10.1109/SISPAD.2000.871194 | |
| 396. | Dragosits, K., Hagenbeck, R., Selberherr, S.: "Transient Simulation of Ferroelectric Hysteresis"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 26.03.2000 - 29.03.2000; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; S. 433 - 436. | |
| 395. | Dragosits, K., Kosik, R., Selberherr, S.: "Two-Dimensional Simulation of Ferroelectric Materials"; Vortrag: International Symposium on Integrated Ferroelectrics (ISIF), Aachen; 12.03.2000 - 15.03.2000; in: "Abstracts Intl. Symposium on Integrated Ferroelectrics", (2000), S. 128. | |
| 394. | Pyka, W., Sukharev, V., Kumar, K., Joh, S., McInerney, J.E.: "A 3D Integrated Simulation of Across-Wafer Metal Stack Gap-Fill for Local Interconnect Applications"; Poster: International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara; 07.09.1999 - 09.09.1999; in: "Proceedings of the 16th Intl. VLSI Multilevel Interconnection Conf.", (1999), S. 477 - 479. | |
| 393. | Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.: "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 55 - 58. https://doi.org/10.1109/SISPAD.1999.799258 | |
| 392. | Palankovski, V., Gonzalez, B., Kosina, H., Hernandez, A., Selberherr, S.: "A New Analytical Energy Relaxation Time Model for Device Simulation"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 395 - 398. | |
| 391. | Binder, T., Selberherr, S.: "A Parallel Finite Oct-Tree for Multi-Threaded Insert, Delete, and Search Operations"; Vortrag: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; S. 613 - 616. | |
| 390. | Palankovski, V., Strasser, R., Kosina, H., Selberherr, S.: "A Systematic Approach for Model Extraction for Device Simulation Application"; Vortrag: International Conference on Applied Modelling and Simulation, Cairns; 01.09.1999 - 03.09.1999; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; S. 463 - 466. | |
| 389. | Quay, R., Moglestue, C., Palankovski, V., Selberherr, S.: "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials"; Vortrag: Materials Research Society Spring Meeting (MRS), Strasbourg; 01.06.1999 - 04.06.1999; in: "Abstracts E-MRS Spring Meeting", (1999), S. L-7. | |
| 388. | Radi, M., Selberherr, S.: "AMIGOS - A Rapid Prototyping System"; Vortrag: International Conference on Applied Informatics, Innsbruck; 15.02.1999 - 18.02.1999; in: "Proceedings IASTED Intl. Conf. on Applied Informatics", (1999), ISBN: 0-88986-241-9; S. 372 - 374. | |
| 387. | Hössinger, A., Selberherr, S.: "Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 363 - 366. | |
| 386. | Selberherr, S.: "Aktuelle Entwicklungen der Mikroelektronik"; Vortrag: Informationstagung Mikroelektronik (ME), Wien (eingeladen); 29.09.1999 - 30.09.1999; in: "Proceedings Mikroelektronik, Elektrotechnik und Informationstechnik 1999", 116 (1999), S. 485 - 490. https://doi.org/10.1007/BF03158944 | |
| 385. | Gonzalez, B., Palankovski, V., Kosina, H., Hernandez, A., Selberherr, S.: "An Analytical Model for the Electron Energy Relaxation Time"; Vortrag: Conference De Dispositivos Electronicos, Madrid; 10.06.1999 - 11.06.1999; in: "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5; S. 263 - 266. | |
| 384. | Gonzalez, B., Palankovski, V., Kosina, H., Hernandez, A., Selberherr, S.: "An Energy Relaxation Time Model for Device Simulation"; Vortrag: International Conference on Modelling and Simulation, Philadelphia; 05.05.1999 - 08.05.1999; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8; S. 367 - 370. | |
| 383. | Stockinger, M., Selberherr, S.: "Closed-Loop CMOS Gate Delay Time Optimization"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 13.09.1999 - 15.09.1999; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1999), ISBN: 2-86332-245-1; S. 504 - 507. | |
| 382. | Stockinger, M., Strasser, R., Plasun, R., Wild, A., Selberherr, S.: "Closed-Loop MOSFET Doping Profile Optimization for Portable Systems"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 411 - 413. | |
| 381. | Haindl, B., Kosik, R., Fleischmann, P., Selberherr, S.: "Comparison of Finite Element and Finite Box Discretization for Three-Dimensional Diffusion Modeling Using AMIGOS"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 131 - 134. https://doi.org/10.1109/SISPAD.1999.799278 | |
| 380. | Grasser, T., Kosina, H., Selberherr, S.: "Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 151 - 154. https://doi.org/10.1109/SISPAD.1999.799283 | |
| 379. | Quay, R., Palankovski, V., Reuter, R., Schlechtweg, M., Kellner, W., Selberherr, S.: "III/V Device Optimization by Physics Based S-Parameter Simulation"; Vortrag: International Symposium on Compound Semiconductors (ISCS), Berlin; 22.08.1999 - 26.08.1999; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8; S. 325 - 328. | |
| 378. | Strasser, R., Plasun, R., Stockinger, M., Selberherr, S.: "Inverse Modeling of Semiconductor Devices"; Vortrag: Conference on Optimization, Atlanta; 10.05.1999 - 12.05.1999; in: "Abstracts SIAM Conf. on Optimization", (1999), S. 77. | |
| 377. | Fleischmann, P., Haindl, B., Kosik, R., Selberherr, S.: "Investigation of a Mesh Criterion for Three-Dimensional Finite Element Diffusion Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 71 - 74. https://doi.org/10.1109/SISPAD.1999.799262 | |
| 376. | Pyka, W., Fleischmann, P., Haindl, B., Selberherr, S.: "Linking Three-Dimensional Topography Simulation with High Pressure CVD Reaction Kinetics"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 199 - 202. https://doi.org/10.1109/SISPAD.1999.799295 | |
| 375. | Nedjalkov, M., Kosina, H., Selberherr, S.: "Monte-Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 155 - 158. https://doi.org/10.1109/SISPAD.1999.799284 | |
| 374. | Dragosits, K., Selberherr, S.: "Numerical Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis"; Vortrag: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 19.04.1999 - 21.04.1999; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; S. 309 - 312. | |
| 373. | Hössinger, A., Radi, M., Scholz, B., Fahringer, T., Langer, E., Selberherr, S.: "Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 103 - 106. https://doi.org/10.1109/SISPAD.1999.799271 | |
| 372. | Hössinger, A., Langer, E., Selberherr, S.: "Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator"; Vortrag: European Simulation Symposium (ESS), Erlangen; 26.10.1999 - 28.10.1999; in: "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x; S. 649 - 651. | |
| 371. | Strasser, R., Plasun, R., Selberherr, S.: "Practical Inverse Modeling with SIESTA"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 91 - 94. https://doi.org/10.1109/SISPAD.1999.799268 | |
| 370. | Palankovski, V., Quay, R., Selberherr, S., Schultheis, R.: "S-Parameter Simulation of HBTs on Gallium-Arsenide"; Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x; S. 15 - 19. https://doi.org/10.1109/EDMO.1999.821087 | |
| 369. | Fleischmann, P., Kosik, R., Haindl, B., Selberherr, S.: "Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements"; Vortrag: International Meshing Roundtable, South Lake Tahoe; 10.10.1999 - 13.10.1999; in: "Proceedings 8th Intl. Meshing Roundtable", (1999), S. 241 - 246. | |
| 368. | Palankovski, V., Selberherr, S., Schultheis, R.: "Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 06.09.1999 - 08.09.1999; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; S. 227 - 230. https://doi.org/10.1109/SISPAD.1999.799302 | |
| 367. | Kosina, H.: "The Monte Carlo Method for Semi-classical Charge Transport in Semiconductor Devices"; Vortrag: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), S. 26 - 27. | |
| 366. | Palankovski, V., Selberherr, S.: "Thermal Models for Semiconductor Device Simulation"; Vortrag: Conference on High Temperature Electronics (HITEN), Berlin; 04.07.1999 - 07.07.1999; in: "Proceedings European Conf. on High Temperature Electronics HITEN", (1999), ISBN: 0-7803-5795-7; S. 25 - 28. https://doi.org/10.1109/HITEN.1999.827343 | |
| 365. | Quay, R., Reuter, R., Grasser, T., Selberherr, S.: "Thermal Simulations of III/V HEMTs"; Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 22.11.1999 - 23.11.1999; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x; S. 87 - 92. | |
| 364. | Hössinger, A., Selberherr, S., Kimura, M., Nomachi, I., Kusanagi, S.: "Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions"; Vortrag: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 05.05.1999 - 06.05.1999; in: "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", Electrochemical Society, 99-2 (1999), ISBN: 1-56677-224-9; S. 18 - 25. | |
| 363. | Pyka, W., Kirchauer, H., Selberherr, S.: "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography"; Vortrag: Micro- and Nano-Engineering Conference, Rom; 21.09.1999 - 23.09.1999; in: "Abstracts Micro-and-Nano-Engineering 99 Conf.", (1999), S. 305 - 306. | |
| 362. | Harlander, C., Sabelka, R., Minixhofer, R., Selberherr, S.: "Three-Dimensional Transient Electro-Thermal Simulation"; Vortrag: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Rome; 03.10.1999 - 06.10.1999; in: "Proceedings THERMINIC Workshop", (1999), S. 169 - 172. | |
| 361. | Nedjalkov, M., Kosina, H.: "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling"; Vortrag: Seminar on Monte Carlo Methods (MCM), Varna; 07.06.1999 - 11.06.1999; in: "Abstracts IMACS Seminar on Monte Carlo Methods", (1999), S. 43. | |
| 360. | Martins, R., Selberherr, S., Vaz, F.: "A CMOS IC for Portable EEG Acquisition Systems"; Vortrag: Instrumentation and Measurement Technology Conference, St. Paul; 18.05.1998 - 21.05.1998; in: "Proceedings Instrumentation and Measurement Technology Conf.", (1998), ISBN: 0-7803-4797-8; S. 1406 - 1410. | |
| 359. | Palankovski, V., Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: "A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 105 - 108. https://doi.org/10.1007/978-3-7091-6827-1_29 | |
| 358. | Kaiblinger-Grujin, G., Grasser, T., Selberherr, S.: "A Physically-Based Electron Mobility Model for Silicon Device Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 312 - 315. https://doi.org/10.1007/978-3-7091-6827-1_78 | |
| 357. | Stockinger, M., Strasser, R., Plasun, R., Wild, A., Selberherr, S.: "A Qualitative Study on Optimized MOSFET Doping Profiles"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 77 - 80. https://doi.org/10.1007/978-3-7091-6827-1_22 | |
| 356. | Kirchauer, H., Selberherr, S.: "A Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination"; Poster: SPIE Optical Microlithography, Santa Clara, CA, USA; 22.02.1998 - 27.02.1998; in: "Proceedings of SPIE Optical Microlithography", (1998), S. 3334·86. | |
| 355. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: "A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation"; Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; S. M2.4.1. | |
| 354. | Sabelka, R., Martins, R., Selberherr, S.: "Accurate Layout-Based Interconnect Analysis"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (1998), ISBN: 3-211-83208-4; S. 336 - 339. https://doi.org/10.1007/978-3-7091-6827-1_84 | |
| 353. | Langer, E., Selberherr, S.: "Advanced Models, Applications, and Software Systems for High Performance Computing - Applications in Microelectronics"; Vortrag: Tagung des Forschungsverbund für technisch-wissenschaftliches Hochleistungsrechnen (FORTWIHR), München (eingeladen); 16.03.1998 - 18.03.1998; in: "Abstracts Intl. FORTHWIHR Conf.", (1998), S. 1. | |
| 352. | Rottinger, M., Seifert, N., Selberherr, S.: "Analysis of AVC Measurements"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 344 - 347. | |
| 351. | Grasser, T., Strasser, R., Knaipp, M., Tsuneno, K., Masuda, H., Selberherr, S.: "Calibration of a Mobility Model for Quartermicron CMOS Devices"; Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; S. 75 - 77. | |
| 350. | Grasser, T., Strasser, R., Knaipp, M., Tsuneno, K., Masuda, H., Selberherr, S.: "Device Simulator Calibration for Quartermicron CMOS Devices"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 93 - 96. https://doi.org/10.1007/978-3-7091-6827-1_26 | |
| 349. | Pyka, W., Martins, R., Selberherr, S.: "Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 16 - 19. https://doi.org/10.1007/978-3-7091-6827-1_5 | |
| 348. | Grasser, T., Palankovski, V., Schrom, G., Selberherr, S.: "Hydrodynamic Mixed-Mode Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 247 - 250. https://doi.org/10.1007/978-3-7091-6827-1_62 | |
| 347. | Palankovski, V., Kaiblinger-Grujin, G., Selberherr, S.: "Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance"; Vortrag: European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 24.06.1998 - 26.06.1998; in: "Proceedings European Workshop on Low Temperature Electronics 3", L. Brogiato, D.V. Camin, G. Pessina (Hrg.); Journal de Physique IV, 8 (1998), S. 91 - 94. https://doi.org/10.1051/jp4:1998321 | |
| 346. | Palankovski, V., Knaipp, M., Selberherr, S.: "Influence of the Material Composition and Doping Profiles on HBTs Device Performance"; Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 13.05.1998 - 16.05.1998; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4; S. 7 - 10. | |
| 345. | Grasser, T., Selberherr, S., Tsueno, K., Masuda, H.: "Mobility Parameter Tuning for Device Simulation"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 336 - 339. | |
| 344. | Martins, R., Pyka, W., Sabelka, R., Selberherr, S.: "Modeling Integrated Circuit Interconnections"; Vortrag: International Conference on Microelectronics and Packaging, Curitiba; 10.08.1998 - 14.08.1998; in: "Proceedings XIII SBMicro, Intl. Conf. on Microelectronics and Packaging", (1998), S. 144 - 151. | |
| 343. | Mlekus, R., Selberherr, S.: "Object-Oriented Algorithm and Model Management"; Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 437 - 441. | |
| 342. | Fleischmann, P., Leitner, E., Selberherr, S.: "Optimized Geometry Preprocessing for Three-Dimensional Semiconductor Process Simulation"; Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 317 - 321. | |
| 341. | Strasser, R., Plasun, R., Selberherr, S.: "Parallel and Distributed Optimization in Technology Computer Aided Design"; Poster: European Simulation Multiconference (ESM), Manchester; 16.06.1998 - 19.06.1998; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; S. 78 - 80. | |
| 340. | Strasser, R., Selberherr, S.: "Parallel and Distributed TCAD Simulations Using Dynamic Load Balancing"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 89 - 92. https://doi.org/10.1007/978-3-7091-6827-1_25 | |
| 339. | Martins, R., Sabelka, R., Pyka, W., Selberherr, S.: "Rigorous Capacitance Simulation of DRAM Cells"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 69 - 72. https://doi.org/10.1007/978-3-7091-6827-1_20 | |
| 338. | Quay, R., Reuter, R., Palankovski, V., Selberherr, S.: "S-Parameter Simulation of RF-HEMTs"; Vortrag: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 24.11.1998; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6; S. 13 - 18. | |
| 337. | Sabelka, R., Selberherr, S.: "SAP - A Program Package for Three-Dimensional Interconnect Simulation"; Poster: IEEE International Interconnect Technology Conference (IITC), San Francisco; 01.06.1998 - 03.06.1998; in: "Proceedings Intl. Interconnect Technology Conf.", (1998), ISBN: 0-7803-4286-0; S. 250 - 252. | |
| 336. | Palankovski, V., Grasser, T., Selberherr, S.: "SiGe HBT in Mixed-Mode Device and Circuit Simulation"; Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 24.05.1998 - 27.05.1998; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), S. 145 - 156. | |
| 335. | Plasun, R., Stockinger, M., Strasser, R., Selberherr, S.: "Simulation Based Optimization Environment and it's Application to Semiconductor Devices"; Vortrag: International Conference on Applied Modelling and Simulation, Honolulu; 12.08.1998 - 14.08.1998; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; S. 313 - 316. | |
| 334. | Rottinger, M., Seifert, N., Selberherr, S.: "Simulation of AVC Measurements"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 284 - 287. https://doi.org/10.1007/978-3-7091-6827-1_72 | |
| 333. | Wasshuber, C., Kosina, H., Selberherr, S.: "Single-Electron Memories with Terabit Capacity"; Poster: Advanced Research Workshop on Future Trends in Microelectronics, Ile des Embiez (eingeladen); 31.05.1998 - 05.06.1998; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Off the Beaten Path", (1998), S. P-Th-17. | |
| 332. | Palankovski, V., Kaiblinger-Grujin, G., Selberherr, S.: "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices"; Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 21.06.1998 - 24.06.1998; in: "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", PSA, (1998), S. 15. | |
| 331. | Radi, M., Selberherr, S.: "Three-Dimensional Adaptive Mesh Relaxation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 193 - 196. https://doi.org/10.1007/978-3-7091-6827-1_49 | |
| 330. | Pyka, W., Selberherr, S.: "Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization"; Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 06.05.1998 - 08.05.1998; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; S. T4.3.3. | |
| 329. | Pyka, W., Selberherr, S.: "Three-Dimensional Simulation of TiN Magnetron Sputter Deposition"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 07.09.1998 - 09.09.1998; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; S. 324 - 327. | |
| 328. | Dragosits, K., Knaipp, M., Selberherr, S.: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; Vortrag: International Conference on Electronic Materials, Cheju; 24.08.1998 - 27.08.1998; in: "Abstracts Intl. Conf. on Electronic Materials", (1998), S. 40. | |
| 327. | Dragosits, K., Knaipp, M., Selberherr, S.: "Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 02.09.1998 - 04.09.1998; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; S. 368 - 371. https://doi.org/10.1007/978-3-7091-6827-1_91 | |
| 326. | Troger, C., Kosina, H., Selberherr, S.: "A Consistent Inclusion of Nonparabolicity in a Schrödinger-Poisson Solver for Silicon Inversion Layers"; Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 26 - 27. | |
| 325. | Simlinger, T., Rottinger, M., Selberherr, S.: "A Method for Unified Treatment of Interface Conditions Suitable for Device Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 173 - 176. https://doi.org/10.1109/SISPAD.1997.621365 | |
| 324. | Kosina, H., Kaiblinger-Grujin, G., Selberherr, S.: "A New Approach to Ionized-Impurity Scattering"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 205 - 208. https://doi.org/10.1109/SISPAD.1997.621373 | |
| 323. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: "A Novel Diffusion Coupled Oxidation Model"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 472 - 475. | |
| 322. | Knaipp, M., Selberherr, S.: "A Physically Based Substrate Current Simulation"; Vortrag: International Conference on VLSI and CAD (ICVC), Seoul; 13.10.1997 - 15.10.1997; in: "Proceedings Intl. Conf. On VLSI and CAD", (1997), S. 558 - 560. | |
| 321. | Knaipp, M., Grasser, T., Selberherr, S.: "A Physically Based Substrate Current Simulation"; Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 196 - 199. | |
| 320. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 331 - 334. https://doi.org/10.1109/SISPAD.1997.621405 | |
| 319. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"; Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 57 - 60. | |
| 318. | Mlekus, R., Selberherr, S.: "An Object-Oriented Approach to the Management of Models"; Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 53 - 56. | |
| 317. | Radi, M., Leitner, E., Hollensteiner, E., Selberherr, S.: "Analytical Partial Differential Equation Modeling Using AMIGOS"; Vortrag: International Conference on Artificial Intelligence and Soft Computing, Banff; 27.07.1997 - 01.08.1997; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence and Soft Computing", (1997), ISBN: 0-88986-229-x; S. 423 - 426. | |
| 316. | Köpf, C., Kosina, H., Selberherr, S.: "Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys"; Poster: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), S. TP21. | |
| 315. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: "Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors"; Vortrag: Condensed Matter Physics Meeting, Pakota Island; 04.02.1997 - 07.02.1997; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), S. TA02. | |
| 314. | Langer, E.: "Device Simulation as a Customer of Technology Process Simulation"; Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz (eingeladen); 17.08.1997 - 20.08.1997; in: "Proceedings ChiPPS 97 Conf.", (1997), S. 1. | |
| 313. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: "Electron Mobility in Doped Semiconductors"; Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 30 - 31. | |
| 312. | Brech, H., Grave, T., Werthof, A., Siveris, H., Simlinger, T., Selberherr, S.: "Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics"; Vortrag: International Symposium on Compound Semiconductors (ISCS), San Diego; 08.09.1997 - 11.09.1997; in: "Abstracts Intl. Symposium on Compound Semiconductors", (1997), S. ThA6. | |
| 311. | Kaiblinger-Grujin, G., Kosina, H., Köpf, C., Selberherr, S.: "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors"; Vortrag: International Conference on Defects in Semiconductors, Aveiro; 21.07.1997 - 25.07.1997; in: "Proceedings Intl. Conf. on Defects in Semiconductors", Proceedings Part 2, Section 11 (1997), S. 939 - 944. | |
| 310. | Köpf, C., Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: "Influence of Dopant Species on Electron Mobility in InP"; Vortrag: International Conference on Indium Phosphide an Related Materials, Hyannis; 11.05.1997 - 15.05.1997; in: "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), S. 280 - 283. | |
| 309. | Brech, H., Simlinger, T., Grave, T., Selberherr, S.: "Influence of Gatelength on the DC-Characteristics and ft of Pseudomorphic Power-HEMTs"; Vortrag: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen; 25.05.1997 - 28.05.1997; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1997), S. 1 - 2. | |
| 308. | Brech, H., Grave, T., Simlinger, T., Selberherr, S.: "Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance"; Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Anaheim; 12.10.1997 - 15.10.1997; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1997), ISBN: 0-7803-4083-3; S. 66 - 69. https://doi.org/10.1109/GAAS.1997.628239 | |
| 307. | Knaipp, M., Selberherr, S.: "Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs"; Vortrag: International Conference on Computational Physics, Singapore; 02.06.1997 - 04.06.1997; in: "Abstracts Intl. Conf. on Computational Physics", (1997), S. 37 - 38. | |
| 306. | Troger, C., Kosina, H., Selberherr, S.: "Modeling Nonparabolicity Effects in Silicon Inversion Layers"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 323 - 326. https://doi.org/10.1109/SISPAD.1997.621403 | |
| 305. | Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: "Monte Carlo Simulation of Electron Transport in Doped Silicon"; Vortrag: High Performance Computing Asia Conference, Seoul; 28.04.1997 - 02.05.1997; in: "Proceedings High Performance Computing Asia 1997 Conf.", (1997), S. 444 - 449. | |
| 304. | Mlekus, R., Selberherr, S.: "Object-Oriented Management of Algorithms and Models"; Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 601 - 605. | |
| 303. | Plasun, R., Pichler, C., Simlinger, T., Selberherr, S.: "Optimization Tasks in Technology CAD"; Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 445 - 449. | |
| 302. | Köpf, C., Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: "Reexamination of Electron Mobility Dependence on Dopants in GaAs"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 22.09.1997 - 24.09.1997; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; S. 304 - 307. | |
| 301. | Kosina, H., Troger, C.: "SPIN - A Schrödinger Poisson Solver Including Nonparabolic Bands"; Vortrag: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), S. P51. | |
| 300. | Sabelka, R., Koyama, K., Selberherr, S.: "STAP - A Finite Element Simulator for Three-Dimensional Thermal Analysis of Interconnect Structures"; Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 621 - 625. | |
| 299. | Wasshuber, C., Kosina, H., Selberherr, S.: "Single-Electron Memories"; Vortrag: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 28.05.1997 - 30.05.1997; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), S. FrP1. | |
| 298. | Plasun, R., Pichler, C., Simlinger, T., Selberherr, S.: "Technology CAD for Smart Power Devices"; Vortrag: International Workshop on Processes of Semiconductor Devices, Delhi; 16.12.1997 - 20.12.1997; in: "Physics of Semiconductor Devices", V. Kumar, S. Agarwal (Hrg.); (1997), S. 481 - 488. | |
| 297. | Simlinger, T., Pichler, C., Plasun, R., Selberherr, S.: "Technology CAD for Smart Power Devices"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 07.10.1997 - 11.10.1997; in: "Proceedings CAS 97 Conf.", (1997), ISBN: 0-7803-3804-9; S. 383 - 393. | |
| 296. | Kosina, H., Selberherr, S.: "Technology CAD: Process and Device Simulation"; Vortrag: International Conference on Microelectronics (MIEL), Nis (eingeladen); 14.09.1997 - 17.09.1997; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1997), ISBN: 0-7803-3664-x; S. 441 - 450. https://doi.org/10.1109/ICMEL.1997.632866 | |
| 295. | Selberherr, S.: "The State of the Art in Technology Computer-Aided Design"; Vortrag: Ultra Low Voltage Low Power Research Symposium, Portland (eingeladen); 05.09.1997; in: "Abstracts Ultra Low Voltage Low Power Research Symposium", (1997), S. 1. | |
| 294. | Selberherr, S.: "The State of the Art in Technology Computer-Aided Design"; Vortrag: Primer Taller de Technicas de Simulacion en Semiconductores, Mexico City (eingeladen); 02.06.1997 - 03.06.1997; in: "Abstracts Primer Taller de Technicas de Simulacion en Semiconductores", (1997), S. 1. | |
| 293. | Fleischmann, P., Selberherr, S.: "Three-Dimensional Delaunay Mesh Generation Using a Modified Advancing Front Approach"; Vortrag: International Meshing Roundtable, Park City; 13.10.1997 - 15.10.1997; in: "Proceedings 6th International Meshing Roundtable", (1997), S. 267 - 278. | |
| 292. | Stach, A., Sabelka, R., Selberherr, S.: "Three-Dimensional Layout-Based Thermal and Capacitive Simulation of Interconnect Structures"; Vortrag: International Conference on Modelling, Identification and Control, Innsbruck; 17.02.1997 - 19.02.1997; in: "Proceedings IASTED Intl. Conf. on Modelling, Identification and Control", (1997), ISBN: 0-88986-217-6; S. 16 - 19. | |
| 291. | Kirchauer, H., Selberherr, S.: "Three-Dimensional Photolithography Simulation"; Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 19.03.1997 - 22.03.1997; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; S. 27 - 31. | |
| 290. | Strasser, R., Pichler, C., Selberherr, S.: "VISTA - A Framework for Technology CAD Purposes"; Vortrag: European Simulation Symposium (ESS), Passau; 19.10.1997 - 22.10.1997; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; S. 450 - 454. | |
| 289. | Schrom, G., De Vivek Selberherr, S.: "VLSI Performance Metric Based on Minimum TCAD Simulations"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 08.09.1997 - 10.09.1997; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; S. 25 - 28. https://doi.org/10.1109/SISPAD.1997.621327 | |
| 288. | Tuppa, W., Selberherr, S.: "A CASE-Oriented Configuration Management Agent"; Vortrag: International Conference on Artificial Intelligence, Expert Systems and Neural Networks, Honolulu; 19.08.1996 - 21.08.1996; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence, Expert Systems and Neural Networks", (1996), ISBN: 0-88986-211-7; S. 368 - 371. | |
| 287. | Tuppa, W., Selberherr, S.: "A CASE-Oriented Configuration Management Utility"; Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 25.04.1996 - 27.04.1996; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1996), ISBN: 0-88986-201-x; S. 83 - 87. | |
| 286. | Schrom, G., Stach, A., Selberherr, S.: "A Charge Based MOSFET Model for Low-Voltage Mixed-Signal Applications"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 495 - 498. | |
| 285. | Tuppa, W., Selberherr, S.: "A Configuration Management Utility with CASE-Orientation"; Vortrag: International Conference on Modelling, Simulation and Optimization, Gold Coast; 06.05.1996 - 09.05.1996; in: "Proceedings IASTED Intl. Conf. on Modelling, Simulation and Optimization", (1996), ISBN: 0-88986-197-8; S. 242 - 273. | |
| 284. | Schrom, G., Stach, A., Selberherr, S.: "A Consistent Dynamic MOSFET Model for Low-Voltage Applications"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 177 - 178. https://doi.org/10.1109/SISPAD.1996.865327 | |
| 283. | Wasshuber, C., Kosina, H.: "A Multipurpose Single Electron Device and Circuit Simulator"; Vortrag: Silicon Nanoelectronics Workshop, Honolulu; 09.06.1996 - 10.06.1996; in: "Abstracts Silicon Nanoelectronics Workshop", (1996), S. 37. | |
| 282. | Fleischmann, P., Selberherr, S.: "A New Approach to Fully Unstructured Three-Dimensional Delaunay Mesh Generation with Improved Element Quality"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 129 - 130. https://doi.org/10.1109/SISPAD.1996.865308 | |
| 281. | Wasshuber, C., Kosina, H.: "A Single Electron Device and Circuit Simulator"; Vortrag: Nanostructures and Mesoscopic Systems, Santa Fe; 19.05.1996 - 24.05.1996; in: "Proceedings Nanostructures and Mesoscopic Systems", (1996), S. 43. | |
| 280. | Wasshuber, C., Kosina, H.: "A Single Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 135 - 136. https://doi.org/10.1109/SISPAD.1996.865311 | |
| 279. | Puchner, H., Neary, P., Aronowitz, S., Selberherr, S.: "A Transient Activation Model for Phosphorus after Sub-Amorphizing Channeling Implants"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 157 - 160. | |
| 278. | Knaipp, M., Simlinger, T., Kanert, W., Selberherr, S.: "Analysis of Leakage Currents in Smart Power Devices"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 645 - 648. | |
| 277. | Köpf, C., Kosina, H., Selberherr, S.: "Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System"; Vortrag: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1996), S. 675 - 678. | |
| 276. | Köpf, C., Kosina, H., Selberherr, S.: "Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System"; Vortrag: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 23.09.1996 - 27.09.1996; in: "Abstracts International Symposium on Compound Semiconductors (ISCS)", (1996), S. 30. | |
| 275. | Brech, H., Simlinger, T., Grave, T., Selberherr, S.: "Current Transport in Double Heterojunction HEMTs"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 873 - 876. | |
| 274. | Fleischmann, P., Sabelka, R., Stach, A., Strasser, R., Selberherr, S.: "Grid Generation for Three-Dimensional Process and Device Simulation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan (eingeladen); 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 161 - 166. https://doi.org/10.1109/SISPAD.1996.865321 | |
| 273. | Martins, R., Selberherr, S.: "Layout Data in TCAD Frameworks"; Vortrag: European Simulation Multiconference (ESM), Budapest; 02.06.1996 - 06.06.1996; in: "Proceedings European Simulation Multiconference", (1996), ISBN: 1-56555-097-8; S. 1122 - 1126. | |
| 272. | Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.: "Monte Carlo Simulation of Silicon Amorphization During Ion Implantation"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 17 - 18. https://doi.org/10.1109/SISPAD.1996.865252 | |
| 271. | Selberherr, S.: "Prozeßsimulation: Stand der Technik"; Vortrag: Verhandlungen der DPG, Frühjahrstagung Festkörperphysik, Regensburg (eingeladen); 25.03.1996 - 29.03.1996; in: "Verhandlungen der DPG", (1996), S. 1360. | |
| 270. | Kirchauer, H., Selberherr, S.: "Rigorous Three-Dimensional Photolithography Simulation Over Nonplanar Structures"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 09.09.1996 - 11.09.1996; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; S. 347 - 350. | |
| 269. | Pichler, C., Plasun, R., Strasser, R., Selberherr, S.: "Simulation Environment for Semiconductor Technology Analysis"; Vortrag: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 147 - 148. https://doi.org/10.1109/SISPAD.1996.865314 | |
| 268. | Langer, E.: "Simulation technologischer Prozesse"; Vortrag: ÖPG-Jahrestagung, Johannes Kepler Universität Linz (eingeladen); 23.09.1996 - 27.09.1996; in: "Tagungsband ÖPG-Tagung 1996", (1996), S. 130. | |
| 267. | Selberherr, S.: "The MINIMOS Simulator and TUV Perspective on TCAD"; Vortrag: Computer-Aided Design of IC Processes and Devices, Stanford (eingeladen); 07.08.1996 - 08.08.1996; in: "Symposium on Computer-Aided Design of IC Processes and Devices", (1996), S. 1 - 14. | |
| 266. | Kirchauer, H., Selberherr, S.: "Three-Dimensional Photoresist Exposure and Development Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 02.09.1996 - 04.09.1996; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; S. 99 - 100. https://doi.org/10.1109/SISPAD.1996.865291 | |
| 265. | Langer, E., Selberherr, S.: "Three-Dimensional Process Simulation for Advanced Silicon Semiconductor Devices"; Vortrag: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice (eingeladen); 20.10.1996 - 24.10.1996; in: "Proceedings ASDAM 96 Conf.", (1996), S. 169 - 177. | |
| 264. | Kirchauer, H., Selberherr, S.: "Three-Dimensional Simulation of Light-Scattering over Nonplanar Substrates in Photolithography"; Poster: Electron, Ion and Photon Beam Technology and Nanofabrication Conference, Atlanta; 28.05.1996 - 31.05.1996; in: "Abstracts Electron, Ion and Photon Beam Technology and Nanofabrication Conference", (1996), S. 155 - 156. | |
| 263. | Brech, H., Simlinger, T., Grave, T., Selberherr, S.: "Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT"; Vortrag: III-V Semiconductor Device Simulation Workshop, Eindhoven; 09.05.1996 - 10.05.1996; in: "Proceedings Ninth III-V Semiconductor Device Simulation Workshop", (1996), S. 1 - 3. | |
| 262. | Schrom, G., Selberherr, S.: "Ultra-Low-Power CMOS Technologies"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 09.10.1996 - 12.10.1996; in: "Proceedings CAS 96 Conf.", (1996), ISBN: 0-7803-3233-4; S. 237 - 246. | |
| 261. | Leitner, E., Bohmayr, W., Fleischmann, P., Strasser, E., Selberherr, S.: "3D TCAD at TU Vienna"; Vortrag: 3-Dimensional Process Simulation Workshop, Erlangen (eingeladen); 05.09.1995; in: "Proceedings 3-Dimensional Process Simulation Workshop", (1995), ISBN: 3-211-82741-2; S. 136 - 161. https://doi.org/10.1007/978-3-7091-6905-6_7 | |
| 260. | Khalil, N., Nanz, G., Rios, R., Selberherr, S.: "A B-Splines Regression Technique to Determine One-Dimensional MOS Doping Profiles"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x; S. 191 - 194. | |
| 259. | Rieger, G., Halama, S., Selberherr, S.: "A Graphical Editor for TCAD Purposes"; Poster: Conference on Geometric Design, Nashville; 30.12.1995; in: "Abstracts SIAM Conf. On Geometric Design", (1995), S. A17. | |
| 258. | Harrer, M., Kosina, H.: "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure"; Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 24. | |
| 257. | Kosina, H., Harrer, M., Vogl, P., Selberherr, S.: "A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 396 - 399. https://doi.org/10.1007/978-3-7091-6619-2_96 | |
| 256. | Rieger, G., Halama, S., Selberherr, S.: "A Programmable Tool for Interactive Wafer-State Level Data Processing"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 58 - 61. https://doi.org/10.1007/978-3-7091-6619-2_13 | |
| 255. | Puchner, H., Selberherr, S.: "A Two-Dimensional Dopant Diffusion Model for Polysilicon"; Vortrag: Meeting on Impurity Diffusion and Defects in Silicon and Related Materials, Athen; 03.05.1995 - 04.05.1995; in: "Abstracts Meeting on Impurity Diffusion and Defects in Silicon and Related Materials", (1995), S. 16 - 17. | |
| 254. | Leitner, E., Selberherr, S.: "Adaptive Tessellation for the Three-Dimensional Simulation of Doping Profiles"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 610 - 612. | |
| 253. | Kaiblinger-Grujin, G., Kosina, H.: "An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations"; Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 25. | |
| 252. | Burenkov, A., Bohmayr, W., Lorenz, J., Ryssel, H., Selberherr, S.: "Analytical Model for Phosphorus Large Angle Tilted Implantation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 488 - 491. https://doi.org/10.1007/978-3-7091-6619-2_118 | |
| 251. | Bohmayr, W., Selberherr, S.: "Effiziente Methoden für die Monte Carlo Simulation der Ionenimplantation in multidimensionale kristalline Halbleiterstrukturen"; Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3; S. 63 - 66. | |
| 250. | Bohmayr, W., Selberherr, S.: "Investigation of Channeling in Field Oxide Corners by Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 304 - 306. | |
| 249. | Simlinger, T., Kosina, H., Rottinger, M., Selberherr, S.: "MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Den Haag; 25.09.1995 - 27.09.1995; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1995), ISBN: 2-86332-182-x; S. 83 - 86. | |
| 248. | Köpf, C., Kosina, H., Selberherr, S.: "Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation"; Vortrag: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in: "Proceedings Intl.Symposium on Compound Semiconductors", (1995), S. 1255 - 1260. | |
| 247. | Köpf, C., Kosina, H., Selberherr, S.: "Mobility Model for III-V Compounds Suited for Hydrodynamic Device Simulation"; Vortrag: International Symposium on Compound Semiconductors (ISCS), Cheju Island; 28.08.1995 - 02.09.1995; in: "Abstracts Intl.Symposium on Compound Semiconductors", (1995), S. 108. | |
| 246. | Kosina, H., Simlinger, T.: "Modeling Concepts for Modern Semiconductor Devices"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 11.10.1995 - 14.10.1995; in: "Proceedings CAS 95 Intl. Semiconductor Conference", (1995), ISBN: 0-7803-2647-4; S. 27 - 36. | |
| 245. | Mlekus, R., Ledl, C., Strasser, E., Selberherr, S.: "Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 50 - 53. https://doi.org/10.1007/978-3-7091-6619-2_11 | |
| 244. | Puchner, H., Selberherr, S.: "Simulation of Ion Implantation Using the Four-Parameter Kappa Distribution Function"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 295 - 297. | |
| 243. | Wasshuber, C., Kosina, H.: "Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge"; Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 30.10.1995 - 02.11.1995; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), S. 4. | |
| 242. | Leitner, E., Selberherr, S.: "Simulation von thermischen Diffusionsprozessen in dreidimensionalen Halbleiterstrukturen"; Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 05.04.1995 - 08.04.1995; in: "Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3; S. 67 - 70. | |
| 241. | Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.: "Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 492 - 495. https://doi.org/10.1007/978-3-7091-6619-2_119 | |
| 240. | Pichler, C., Khalil, N., Schrom, G., Selberherr, S.: "TCAD Optimization Based on Task-Level Framework Services"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 70 - 73. https://doi.org/10.1007/978-3-7091-6619-2_16 | |
| 239. | Selberherr, S., Fischer, C., Halama, S., Pichler, C., Rieger, G., Schrom, G., Simlinger, T.: "The IC Processes of the Future: Advances in Device Structures and Device Simulation Techniques"; Vortrag: Eschola da Sociedade Brasileira de Microeletronica (EBMICRO), Recife (eingeladen); 15.01.1995 - 20.01.1995; in: "Proceedings IV EBMICRO", Vol. 1 (1995), S. 87 - 114. | |
| 238. | Rieger, G., Selberherr, S.: "The PIF Editor - a Data Processor for the VISTA TCAD Framework"; Vortrag: High Performance Computing Asia Conference, Taipei; 18.09.1995 - 22.09.1995; in: "Proceedings High Performance Computing Asia 1995 Conference", (1995), Paper-Nr. el-036, 11 S. | |
| 237. | Mukai, M., Tatsumi, T., Nakauchi, N., Kobayashi, T., Koyama, K., Komatsu, Y., Bauer, R., Rieger, G., Selberherr, S.: "The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 151 - 154. https://doi.org/10.1007/978-3-7091-6619-2_35 | |
| 236. | Leitner, E., Selberherr, S.: "Three-Dimensional Grid Adaptation Using a Mixed-Element Decomposition Method"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 464 - 467. https://doi.org/10.1007/978-3-7091-6619-2_112 | |
| 235. | Bohmayr, W., Selberherr, S.: "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners"; Vortrag: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipei; 31.05.1995 - 02.06.1995; in: "Proceedings VLSI Technology, Systems and Applications Symposium", (1995), ISBN: 0-7803-2773-x; S. 104 - 107. | |
| 234. | Khalil, N., Faricelli, J., Huang, C., Selberherr, S.: "Two-Dimensional Dopant Profiling of Submicron MOSFETs Using Nonlinear Least Squares Inverse Modeling"; Vortrag: Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park (eingeladen); 20.03.1995 - 22.03.1995; in: "Proceedings Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors", (1995), S. 6.1 - 6.9. | |
| 233. | Simlinger, T., Deutschmann, R., Fischer, C., Kosina, H., Selberherr, S.: "Two-Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 589 - 591. | |
| 232. | Rottinger, M., Simlinger, T., Selberherr, S.: "Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS-NT"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 06.09.1995 - 08.09.1995; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; S. 440 - 443. https://doi.org/10.1007/978-3-7091-6619-2_106 | |
| 231. | Schrom, G., Liu, D., Fischer, C., Pichler, C., Svensson, Ch., Selberherr, S.: "VLSI Performance Analysis Method for Low-Voltage Circuit Operation"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 24.09.1995 - 28.09.1995; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), S. 328 - 330. | |
| 230. | Khalil, N., Faricelli, J., Bell, D., Selberherr, S.: "A Novel Method for Extracting the Two-Dimensional Doping Profile of a Sub-Half Micron MOSFET"; Vortrag: Symposium on VLSI Technology, Honolulu; 07.06.1994 - 09.06.1994; in: "Proceedings Symposium on VLSI Technology", (1994), ISBN: 0-7803-1921-4; S. 131 - 132. | |
| 229. | Stiftinger, M., Soppa, W., Selberherr, S.: "A Scalable Physically Based Analytical DMOS Transistor Model"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 12.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 825 - 828. | |
| 228. | Puchner, H., Selberherr, S.: "An Advanced Model for Dopant Diffusion in Polysilicon"; Vortrag: Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences, Pittsburgh; 18.04.1994 - 20.04.1994; in: "Abstracts Conference on Emerging Issues in Mathematics and Computation from the Materials Sciences", (1994), S. A13. | |
| 227. | Schrom, G., Liu, D., Pichler, C., Svensson, Ch., Selberherr, S.: "Analysis of Ultra-Low-Power CMOS With Process and Device Simulation"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 679 - 682. | |
| 226. | Puchner, H., Selberherr, S.: "Dynamic Grain-Growth and Static Clustering Effects on Dopant Diffusion in Polysilicon"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in: "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6; S. 109 - 112. | |
| 225. | Simlinger, T., Fischer, C., Deutschmann, R., Selberherr, S.: "MINIMOS NT - a Hydrodynamic Simulator for High Electron Mobility Transistors"; Vortrag: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in: "Proceedings 8th GaAs Simulation Workshop", (1994). | |
| 224. | Fischer, C., Selberherr, S.: "Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 05.06.1994 - 06.06.1994; in: "Proceedings NUPAD V, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1994), ISBN: 0-7803-1867-6; S. 123 - 126. | |
| 223. | Bauer, R., Selberherr, S.: "Preconditioned CG-Solvers and Finite Element Grids"; Vortrag: Colorado Conference on Iterative Methods, Breckenridge; 05.04.1994 - 09.04.1994; in: "Proceedings Colorado Conference on Iterative Methods", Vol.2 (1994), S. 1 - 5. | |
| 222. | Puchner, H., Selberherr, S.: "Simulation of Graft Base Formation and Emitter Outdiffusion in High-Performance Bipolar LSIs"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 165 - 168. | |
| 221. | Langer, E.: "Simulation of Microstructures"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 11.10.1994 - 16.10.1994; in: "Proceedings CAS'94", (1994), S. 47 - 56. | |
| 220. | Langer, E., Selberherr, S.: "The Status of Process and Device Simulation"; Vortrag: International Conference on Microelectronics (MIEL), Istanbul (eingeladen); 05.09.1994 - 07.09.1994; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1994), S. 256 - 260. | |
| 219. | Strasser, E., Selberherr, S.: "Three-Dimensional Models and Algorithms for Wafer Topography Evaluation"; Vortrag: Microelectronics Conference, Zvenigorod (eingeladen); 28.11.1994 - 03.12.1994; in: "Proceedings Microelectronics '94", (1994), S. 23 - 24. | |
| 218. | Strasser, E., Selberherr, S.: "Three-Dimensional Simulation of Step Coverage for Contact Hole Metallization"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 11.09.1994 - 15.09.1994; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1994), ISBN: 2-86332-157-9; S. 339 - 342. | |
| 217. | Deutschmann, R., Fischer, C., Simlinger, T., Köpf, C., Selberherr, S.: "Two-Dimensional Hydrodynamic Simulation of Heterostructure Devices"; Vortrag: Gallium Arsenide Simulation Workshop, Duisburg; 06.10.1994 - 07.10.1994; in: "Proceedings 8th GaAs Simulation Workshop", (1994). | |
| 216. | Strasser, E., Selberherr, S.: "A General Simulation Method for Etching and Deposition Processes"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 357 - 360. https://doi.org/10.1007/978-3-7091-6657-4_88 | |
| 215. | Strasser, E., Wimmer, K., Selberherr, S.: "A New Method for Simulation of Etching and Deposition Processes"; Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 54 - 55. | |
| 214. | Stiftinger, M., Soppa, W., Selberherr, S.: "A Physically Based DC- and AC-Model for Vertical Smart Power DMOS Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 617 - 620. | |
| 213. | Schrom, G., Selberherr, S., Unterleitner, F., Trontelj, J., Kunc, V.: "Analysis of a CMOS-Compatible Vertical Bipolar Transistor"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 261 - 264. https://doi.org/10.1007/978-3-7091-6657-4_64 | |
| 212. | Strasser, E., Selberherr, S.: "Analysis of the Fabrication Process of Multilayer Vertical Stacked Capacitors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 587 - 590. | |
| 211. | Bauer, R., Stiftinger, M., Selberherr, S.: "Capacitance Calculation of VLSI Multilevel Wiring Structures"; Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 142 - 143. | |
| 210. | Deutschmann, R., Fischer, C., Sala, C., Selberherr, S.: "Comparison between Measured and Simulated Device Characteristics of High Electron Mobility Transistors"; Vortrag: Gallium Arsenide Simulation Group Meeting, Harrogate; 22.04.1993 - 23.04.1993; in: "Abstracts of the 7th GaAs Simulation Group Meeting", (1993), S. 1 - 2. | |
| 209. | Hackel, M., Kosina, H., Selberherr, S.: "Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 65 - 68. https://doi.org/10.1007/978-3-7091-6657-4_15 | |
| 208. | Brand, H., Selberherr, S.: "Electrothermal Analysis of Latch-Up in an IGT"; Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 116 - 117. | |
| 207. | Deutschmann, R., Fischer, C., Sala, C., Selberherr, S.: "Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 461 - 464. https://doi.org/10.1007/978-3-7091-6657-4_114 | |
| 206. | Deutschmann, R., Sala, C., Fischer, C., Selberherr, S.: "Measurement and Simulation of the C-V Characteristics of High Electron Mobility Transistors"; Vortrag: General Conference of the Condensed Matter Division of the European Physical Society, Regensburg; 29.03.1993 - 02.04.1993; in: "Abstracts of the 13th General Conference of the Condensed Matter Division European Physical Society", 17A (1993), S. 1457. | |
| 205. | Brand, H., Selberherr, S.: "Modeling and Simulation of Electrothermal Effects in Power Semiconductor Devices"; Vortrag: International Conference on Numerical Methods in Thermal Problems, Swansea; 12.07.1993 - 16.07.1993; in: "Proceedings International Conference on Numerical Methods in Thermal Problems", (1993), ISBN: 0-906674-80-8; S. 1553 - 1564. | |
| 204. | Schrom, G., Selberherr, S., Unterleitner, F., Trontelj, J., Kunc, V.: "Overvoltage Protection with a CMOS-Compatible BJT"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Grenoble; 13.09.1993 - 16.09.1993; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1993), ISBN: 2-86332-135-8; S. 899 - 902. | |
| 203. | Habas, P.: "Physics and Modeling in Concerning Hot-Carrier Degradation in MOSFETs"; Vortrag: Conference on Microelectronics and Optoelectronics, Nis (eingeladen); 26.10.1993 - 28.10.1993; in: "Proceedings Conference on Microelectronics and Optoelectronics", (1993), S. 179 - 188. | |
| 202. | Heinreichsberger, O., Thurner, M., Selberherr, S.: "Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 07.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 85 - 88. https://doi.org/10.1007/978-3-7091-6657-4_20 | |
| 201. | Pichler, C., Selberherr, S.: "Process Flow Representation within the VISTA Framework"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Wien; 06.09.1993 - 09.09.1993; in: "Proceedings SISDEP 93 Conference", (1993), ISBN: 3-211-82504-5; S. 25 - 28. https://doi.org/10.1007/978-3-7091-6657-4_5 | |
| 200. | Pichler, C., Selberherr, S.: "Rapid Semiconductor Process Design with the VISTA Framework: Integration of Simulation Tools"; Vortrag: International Conference on Modelling and Simulation, Pittsburgh; 10.05.1993 - 12.05.1993; in: "Proceedings IASTED International Conference on Modelling and Simulation", (1993), S. 147 - 150. | |
| 199. | Hackel, M., Kosina, H., Selberherr, S.: "Steady-State Electron Transport in Silicon Dioxide Employing Different Electronic Band-Structures"; Vortrag: International Workshop on Computational Electronics (IWCE), Leeds, UK; 11.08.1993 - 13.08.1993; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), S. 186 - 190. | |
| 198. | Selberherr, S.: "Technology Computer-Aided Design"; Vortrag: International Workshop on Computational Electronics (IWCE), Leeds, UK (eingeladen); 11.08.1993 - 13.08.1993; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1993), S. 37 - 44. | |
| 197. | Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Pichler, C., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., Selberherr, S.: "The Viennese Integrated System for Technology CAD Applications"; Vortrag: Workshop on Technology CAD Systems, Wien (eingeladen); 06.09.1993; in: "Proceedings Technology CAD Systems Workshop", (1993), ISBN: 3-211-82505-3; S. 197 - 236. https://doi.org/10.1007/978-3-7091-9315-0_10 | |
| 196. | Stippel, H., Selberherr, S.: "Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location"; Poster: VLSI Process and Device Modeling Workshop (VPAD), Nara; 14.05.1993 - 15.05.1993; in: "Proceedings VPAD Workshop", (1993), ISBN: 0-7803-1338-0; S. 122 - 123. | |
| 195. | Habas, P., Selberherr, S.: "A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment"; Poster: Solid State Devices and Materials Conference (SSDM), Tsukuba; 26.08.1992 - 28.08.1992; in: "Proceedings SSDM 92 Conference", (1992), S. 170 - 172. | |
| 194. | Kosina, H., Selberherr, S.: "A Monte Carlo MOSFET Simulator Based on a New Method for the Poisson-Transport Iteration"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 117 - 122. | |
| 193. | Stiftinger, M., Selberherr, S.: "A Physically Based Analytical Model for Vertical DMOS Transistors"; Vortrag: Internationales wissenschaftliches Kolloquium, Ilmenau; 21.09.1992 - 24.09.1992; in: "37. Internationales wissenschaftliches Kolloquium", 2 (1992), S. 11 - 16. | |
| 192. | Stippel, H., Halama, S., Hobler, G., Wimmer, K., Selberherr, S.: "Adaptive Grid for Monte Carlo Simulation of Ion Implantation"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 231 - 236. | |
| 191. | Pimingstorfer, H., Selberherr, S.: "Advanced MOS Device Engineering Utilizing a Technology CAD Framework"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 391 - 393. | |
| 190. | Stiftinger, M., Selberherr, S.: "An Analytical DC- and AC-Model for Vertical Smart Power DMOS Transistors"; Vortrag: International Seminar on Power Semiconductors (ISPS), Prag; 09.09.1992 - 11.09.1992; in: "Proceedings ISPS 92", (1992), S. 89 - 93. | |
| 189. | Heinreichsberger, O., Habas, P., Selberherr, S.: "Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; S. 819 - 822. https://doi.org/10.1016/0167-9317(92)90552-3 | |
| 188. | Habas, P., Heinreichsberger, O., Selberherr, S.: "Analysis of the Degradation of n-channel LDD MOSFETs by Numerical Simulation of the Carge-Pumping Experiment"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 691 - 693. | |
| 187. | Bauer, R., Selberherr, S.: "Calculating Coupling Capacitances of Three-Dimensional Interconnections"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 697 - 699. | |
| 186. | Halama, S., Fasching, F., Pimingstorfer, H., Tuppa, W., Selberherr, S.: "Consistent User Interface and Task-Level Architecture of a TCAD System"; Poster: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 237 - 242. | |
| 185. | Gartner, W., Wimmer, K.: "Diffusion in Layered Matter: Selective Excitation Decoding, Magnetic Resonance Images in the Applied Sciences"; Vortrag: Workshop Syllabus, Durham; 26.10.1992 - 28.10.1992; in: "Proceedings Workshop Syllabus", (1992), S. 16. | |
| 184. | Halama, S., Selberherr, S.: "Future Aspects of Process and Device Simulation"; Vortrag: Semiconductor Engineering and Technology Symposium (SET), Warschau (eingeladen); 12.10.1992 - 14.10.1992; in: "Abstracts SET 92 Conference", (1992), ISBN: 83-01-11293-x; S. 83 - 85. | |
| 183. | Stippel, H., Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Tuppa, W., Wimmer, K., Selberherr, S.: "Implementation of a TCAD Framework"; Vortrag: European Simulation Multiconference (ESM), York; 01.06.1992 - 03.06.1992; in: "Proceedings European Simulation Multiconference", (1992), ISBN: 1-56555-013-7; S. 131 - 135. | |
| 182. | Kosina, H., Selberherr, S.: "Improved Algorithms in Monte Carlo Device Simulation"; Vortrag: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA (eingeladen); 28.05.1992 - 29.05.1992; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (1992), S. 43 - 48. | |
| 181. | Bürger, W., Faber, M., Hackel, M., Markum, H., Müller, M.: "Inhomogeneous Universes from Lattice QCD with Dynamical Quarks"; Vortrag: International Symposium on Nuclear Astrophysics, Karlsruhe; 06.07.1992 - 10.07.1992; in: "Proceedings of the International Symposium on Nuclear Astrophysics", (1992), S. 441 - 446. | |
| 180. | Grubmair, P., Habas, P., Heinreichsberger, O., Kosina, H., Sala, C., Selberherr, S.: "Recent Advances in Device Simulation at the TU-Vienna"; Vortrag: International Semiconductor Conference (CAS), Sinaia (eingeladen); 06.10.1992 - 11.10.1992; in: "Proceedings CAS 92 Conference", (1992), S. 347 - 358. | |
| 179. | Bürger, W., Faber, M., Hackel, M., Markum, H., Müller, M.: "Surface Energy and Chiral Interface of a Coexisting Quark-Hadron System"; Vortrag: Particle Production in Highly Exited Matter Conference, Il Ciocco; 12.07.1992 - 24.07.1992; in: "Proceedings of Particle Production in Highly Exited Matter Conference", (1992), S. 239 - 241. | |
| 178. | Selberherr, S.: "Technology Computer-Aided Design"; Vortrag: International Conference on Science and Technology of Electron Devices (STEDCON), Kruger Park (eingeladen); 16.11.1992 - 18.11.1992; in: "Abstracts STEDCON 92 Conference", (1992), S. 26. | |
| 177. | Stippel, H., Hobler, G., Selberherr, S.: "Three-Dimensional Simulation of Ion Implantation"; Vortrag: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 18.10.1992 - 24.10.1992; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), S. 703 - 705. | |
| 176. | Habas, P., Heinreichsberger, O., Selberherr, S.: "Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Leuven; 14.09.1992 - 17.09.1992; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; S. 687 - 690. https://doi.org/10.1016/0167-9317(92)90522-S | |
| 175. | Langer, E., Selberherr, S.: "Transport in MOSFETs, MODFETs and HEMTs"; Vortrag: International Symposium on Signal, Systems, and Electronics (ISSSE), Paris (eingeladen); 01.09.1992 - 04.09.1992; in: "Proceedings ISSSE 92", (1992), S. 626 - 633. | |
| 174. | Brand, H., Selberherr, S.: "Two Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 129 - 134. | |
| 173. | Habas, P., Lugbauer, A., Selberherr, S.: "Two-Dimensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 31.05.1992 - 01.06.1992; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; S. 135 - 140. | |
| 172. | Heinreichsberger, O., Selberherr, S., Stiftinger, M.: "3D MOS Device Simulation on a Connection Machine"; Vortrag: Conference on Parallel Processing for Scientific Computing, Houston; 25.03.1991 - 27.03.1991; in: "Abstracts SIAM Conf. in Parallel Processing for Scientific Computing", (1991), ISBN: 0-89871-303-x; S. 388 - 393. | |
| 171. | Stiftinger, M., Heinreichsberger, O., Selberherr, S.: "A Collection of Iterative Algorithms for VLSI-Device Simulation"; Vortrag: International Congress on Industrial and Applied Mathematics (ICIAM), Washington (eingeladen); 08.07.1991 - 12.07.1991; in: "Abstracts ICIAM 91 Conference", (1991), S. 205. | |
| 170. | Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Selberherr, S., Stippel, H., Tuppa, W., Verhas, P., Wimmer, K.: "A New Open Technology CAD System"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1; S. 217 - 220. https://doi.org/10.1016/0167-9317(91)90216-Z | |
| 169. | Fasching, F., Fischer, C., Selberherr, S., Stippel, H., Tuppa, W., Read, H.: "A PIF Implementation for TCAD Purposes"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 477 - 482. | |
| 168. | Pimingstorfer, H., Halama, S., Selberherr, S.: "A TCAD Environment for Process and Device Engineering"; Vortrag: International Conference on VLSI and CAD (ICVC), Seoul; 22.10.1991 - 25.10.1991; in: "Proceedings International Conference on VLSI and CAD 91", (1991), S. 280 - 283. | |
| 167. | Pimingstorfer, H., Halama, S., Selberherr, S., Wimmer, K., Verhas, P.: "A Technology CAD Shell"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 409 - 416. | |
| 166. | Fasching, F., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Selberherr, S., Stippel, H., Verhas, P., Wimmer, K.: "An Integrated Technology CAD Environment"; Vortrag: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipeh; 22.05.1991 - 24.05.1991; in: "Proceedings VLSI Technology, Systems and Applications Symposium", (1991), ISBN: 0-7803-0036-x; S. 147 - 151. | |
| 165. | Kosina, H., Selberherr, S.: "Analysis of Filter Techniques for Monte-Carlo Device Simulation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 251 - 256. | |
| 164. | Verhas, P., Selberherr, S.: "Automatic Device Characterization"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 399 - 406. | |
| 163. | Halama, S., Hobler, G., Wimmer, K., Selberherr, S.: "Eine neue Methode zur Simulation der Diffusion in allgemeinen Strukturen"; Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), S. 20 - 26. | |
| 162. | Selberherr, S.: "Low-Temperature Operation"; Vortrag: European School on Device Modelling, Bologna (eingeladen); 18.03.1991 - 20.03.1991; in: "Proceedings European School on Device Modelling", (1991), S. 71 - 100. | |
| 161. | Heinreichsberger, O., Selberherr, S., Stiftinger, M.: "Massively Parallel Solution of the Three-Dimensional Van Roosbroeck Equations"; Vortrag: Numerical Simulation Conference, Berlin; 05.05.1991 - 08.05.1991; in: "Abstracts NUMSIM'91", (1991), ISSN: 0933-789x; S. 81 - 88. | |
| 160. | Kosina, H., Lindorfer, P., Selberherr, S.: "Monte-Carlo-Poisson Coupling Using Transport Coefficients"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Montreux; 16.09.1991 - 19.09.1991; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1991), ISBN: 0-444-89066-1; S. 53 - 56. https://doi.org/10.1016/0167-9317(91)90182-D | |
| 159. | Langer, E.: "Numerical Simulation of MOS Transistors"; Vortrag: IMA Workshop on Semiconductors, Minneapolis (eingeladen); 22.07.1991 - 02.08.1991; in: "Proceedings IMA Workshop on Semiconductors", (1991), S. 1 - 29. | |
| 158. | Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S.: "Simulation nichtplanarer Herstellungsprozesse mit PROMIS"; Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 20.03.1991 - 23.03.1991; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), S. 10 - 19. | |
| 157. | Lindorfer, P., Ashworth, J., Selberherr, S.: "Simulation of GaAs Power and Low Noise Microwave Devices with MINIMOS"; Vortrag: European Microwave Conference, Stuttgart (eingeladen); 09.09.1991 - 13.09.1991; in: "Proceedings 21st European Microwave Conference", (1991), S. 173 - 179. | |
| 156. | Selberherr, S., Fischer, C., Halama, S., Pimingstorfer, H., Read, H., Stippel, H., Verhas, P., Wimmer, K.: "The Viennese TCAD System"; Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Oiso (eingeladen); 26.05.1991 - 27.05.1991; in: "Proceedings VPAD Workshop", (1991), S. 32 - 35. | |
| 155. | Traar, K., Stiftinger, M., Heinreichsberger, O., Selberherr, S.: "Three-Dimensional Simulation of Semiconductor Devices on Supercomputers"; Vortrag: Conference on Supercomputing, Köln; 17.06.1991 - 21.06.1991; in: "Proceedings ACM Conf. on Supercomputing", (1991), ISBN: 0-89791-434-1; S. 154 - 162. https://doi.org/10.1145/109025.109069 | |
| 154. | Heinreichsberger, O., Selberherr, S.: "Three-Dimensional Transient Device Simulation with MINIMOS"; Vortrag: Institute for Mathematics and Computer Science Conference (IMACS), Dublin (eingeladen); 22.07.1991 - 26.07.1991; in: "Proceedings IMACS 91 Conference", 4 (1991), S. 1692 - 1694. | |
| 153. | Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S.: "Transformation Methods for Nonplanar Process Simulation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 12.09.1991 - 14.09.1991; in: "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8; S. 131 - 138. | |
| 152. | Nanz, G., Bräunig, D., Dickinger, P., Selberherr, S.: "3D-Simulation of Single Event Upsets in a High Voltage Diode"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), S. 143 - 146. | |
| 151. | Stiftinger, M., Heinreichsberger, O., Selberherr, S.: "A Comparison of Various Accelerators for the Iterative Solution of Large Nonsymmetric Systems"; Vortrag: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in: "Abstracts Conference on Scientific Computation", (1990), S. 82 - 85. | |
| 150. | Selberherr, S., Heinreichsberger, O., Stiftinger, M., Traar, K.: "About the Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers"; Vortrag: Symposium on Supercomputer Simulation of Semiconductor Devices, Minneapolis (eingeladen); 19.11.1990 - 20.11.1990; in: "Manuscripts Symposium on Supercomputer Simulation of Semiconductor Devices", (1990), ISSN: 0010-4655; S. 145 - 156. | |
| 149. | Ashworth, J., Lindorfer, P.: "Analysis of the Breakdown Phenomena in GaAs MESFET's"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 241 - 244. | |
| 148. | Ashworth, J., Lindorfer, P.: "Analysis of the Breakdown Phenomena in GaAs MESFET's"; Vortrag: Gallium Arsenide and Related Compounds Conference, Jersey; 1990; in: "Proceedings GaAs and Related Compounds", (1990). | |
| 147. | Wimmer, K., Bauer, R., Selberherr, S.: "Body-Fitting Coordinate Generation for Two-Dimensional Process-Simulation"; Vortrag: Conference on Signals and Systems, Chengdu; 08.10.1990 - 10.10.1990; in: "Abstracts AMSE Conf. Signals and Systems", 2 (1990), S. 239. | |
| 146. | Dickinger, P., Lindorfer, P., Nanz, G., Selberherr, S.: "Connection of Network and Device Simulation"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in: "NUPAD III Techn. Digest", (1990), S. 73 - 74. | |
| 145. | Selberherr, S.: "Device Modeling and Physics"; Vortrag: General Conference of the Condensed Matter Division of the European Physical Society, Lissabon (eingeladen); 09.04.1990 - 12.04.1990; in: "Europhysics Conference Abstracts", (1990), S. L38. | |
| 144. | Kosina, H., Selberherr, S.: "Efficient Coupling of Monte Carlo and Drift Diffusion Method with Applications to MOSFETs"; Vortrag: Solid State Devices and Materials Conference (SSDM), Sendai; 22.08.1990 - 24.08.1990; in: "Proceedings Solid State Devices and Materials Conference", (1990), ISBN: 4-930813-41-7; S. 139 - 142. | |
| 143. | Heinreichsberger, O., Selberherr, S., Stiftinger, M.: "Fast Iterative Solution of Carrier Continuity Equations in 3D MOS/MESFET Simulations"; Vortrag: Copper Mountain Conference on Iterative Methods, Copper Mountain; 01.04.1990 - 05.04.1990; in: "Proceedings Copper Mountain Conference on Iterative Methods", Book 2 of 4 (1990), S. 1 - 7. | |
| 142. | Halama, S., Wimmer, K., Hobler, G., Selberherr, S.: "Finite-Differenzen Dreiecksnetzgenerierung für die Prozess-Simulation mit PROMIS"; Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in: "Proceedings NuTech", (1990), S. 3. | |
| 141. | Traar, K., Mader, W., Heinreichsberger, O., Selberherr, S., Stiftinger, M.: "High Performance Preconditioning on Supercomputers for the 3D Device Simulator MINIMOS"; Vortrag: Supercomputing Conference, New York; 12.11.1990 - 16.11.1990; in: "Proceedings Supercomputing 90 Conf.", (1990), S. 224 - 231. | |
| 140. | Dickinger, P., Nanz, G., Selberherr, S.: "Measurement and Simulation of Degradation Effects in High Voltage DMOS Devices"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 369 - 372. | |
| 139. | Habas, P., Selberherr, S.: "Numerical Simulation of MOS-Devices with Non-Degenerate Gate"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Nottingham; 10.09.1990 - 13.09.1990; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; S. 161 - 164. | |
| 138. | Heinreichsberger, O., Selberherr, S., Stiftinger, M., Traar, K.: "On Preconditioning Non-Symmetric Matrix Iterations"; Vortrag: Conference on Scientific Computation, Wien; 14.06.1990 - 16.06.1990; in: "Abstracts Conference on Scientific Computation", (1990), S. 34 - 37. | |
| 137. | Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S.: "Prozess-Simulation in nichtplanaren Strukturen mit PROMIS"; Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 20.09.1990 - 21.09.1990; in: "Proceedings NuTech", (1990), S. 4. | |
| 136. | Hobler, G., Halama, S., Wimmer, K., Selberherr, S., Pötzl, H.: "RTA-Simulations with the 2-D Process Simulator PROMIS"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 03.06.1990 - 04.06.1990; in: "NUPAD III Techn. Digest", (1990), S. 13 - 14. | |
| 135. | Dickinger, P., Nanz, G., Selberherr, S.: "Self-Consistent Simulation of Heat Generation and Conduction in Semiconductor Devices"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Ljubljana; 14.05.1990 - 16.05.1990; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1990), S. 157 - 160. | |
| 134. | Selberherr, S., Kosina, H.: "Simulation of Nanometer MOS-Devices with MINIMOS"; Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Kawasaki (eingeladen); 20.08.1990 - 21.08.1990; in: "Proceedings 1990 VLSI Process/Device Modeling Workshop", (1990), S. 2 - 5. | |
| 133. | Kosina, H., Wimmer, K., Fischer, C., Selberherr, S.: "Simulation of ULSI Processes and Devices"; Vortrag: Computer Aided Innovation of New Materials, Tokyo (eingeladen); 28.08.1990 - 31.08.1990; in: "Abstracts Computer Aided Innovation of New Materials 90", (1990), S. 46. | |
| 132. | Kosina, H., Wimmer, K., Fischer, C., Selberherr, S.: "Simulation of ULSI Processes and Devices"; Vortrag: Computer Aided Innovation of New Materials, Tokyo, Japan (eingeladen); 28.08.1990 - 31.08.1990; in: "Proceedings Computer Aided Innovation of New Materials 90", (1990), ISBN: 0-444-88864-0; S. 723 - 728. | |
| 131. | Kausel, W., Nylander, J.O., Nanz, G., Selberherr, S., Pötzl, H.: "BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 421 - 429. | |
| 130. | Nanz, G., Dickinger, P., Fischer, C., Kausel, W., Selberherr, S.: "Bauelementsimulation mit BAMBI"; Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in: "Proceedings NuTech 89", (1989), S. 6. | |
| 129. | Selberherr, S.: "Device and Process Modeling"; Vortrag: International Symposium on Signal, Systems, and Electronics (ISSSE), Erlangen (eingeladen); 18.09.1989 - 20.09.1989; in: "Proceedings ISSSE 89", (1989), S. 333 - 338. | |
| 128. | Lindorfer, P., Selberherr, S.: "GaAs-MESFET Simulation with MINIMOS"; Vortrag: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego; 22.10.1989 - 25.10.1989; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1989), S. 277 - 280. https://doi.org/10.1109/GAAS.1989.69342 | |
| 127. | Selberherr, S., Langer, E.: "Low Temperature MOS Device Modeling"; Vortrag: Workshop on Low Temperature Semiconductor Electronics, Burlington; 07.08.1989 - 08.08.1989; in: "Proceedings Workshop On Low Temperature Semiconductor Electronics", (1989), S. 68 - 72. | |
| 126. | Lindorfer, P., Selberherr, S.: "MESFET Analysis with MINIMOS"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Berlin; 11.09.1989 - 14.09.1989; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1989), ISBN: 3-540-51000-1; S. 92 - 96. https://doi.org/10.1007/978-3-642-52314-4_18 | |
| 125. | Heinreichsberger, O., Habas, P., Lindorfer, P., Mayer, G., Selberherr, S., Stiftinger, M.: "Neuere Entwicklungen bei MINIMOS"; Vortrag: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 02.08.1989 - 03.08.1989; in: "Proceedings NuTech 89", (1989), S. 7. | |
| 124. | Selberherr, S., Langer, E.: "Numerical Simulation of Semiconductor Devices"; Vortrag: European Simulation Multiconference (ESM), Rom (eingeladen); 07.06.1989 - 09.06.1989; in: "Proceedings European Simulation Multiconference ESM '89", (1989), S. 291 - 296. | |
| 123. | Dickinger, P., Nanz, G., Selberherr, S.: "On-Resistance and Breakdown in Resurf Devices"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis; 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 437 - 442. | |
| 122. | Selberherr, S.: "Physical Models for Silicon VLSI"; Vortrag: Short Course on Semiconductor Device Modelling, Leeds (eingeladen); 03.04.1989 - 07.04.1989; in: "Proceedings Short Course on Semiconductor Device Modelling", (1989), S. 70 - 88. https://doi.org/10.1007/978-1-4471-1033-0_6 | |
| 121. | Selberherr, S.: "The State of the Art in Device Simulation"; Vortrag: Congresso da Sociedade Brasileira de Microeletronica, Porto Alegre (eingeladen); 12.07.1989 - 14.07.1989; in: "Proceedings IV Congresso da SBMICRO", Vol.1 (1989), S. 151 - 166. | |
| 120. | Selberherr, S.: "Three Dimensional Device Modeling with MINIMOS 5"; Vortrag: VLSI Process and Device Modeling Workshop (VPAD), Osaka (eingeladen); 26.05.1989 - 27.05.1989; in: "Proceedings 1989 VLSI Process/Device Modeling Workshop", (1989), S. 40 - 41. | |
| 119. | Selberherr, S., Langer, E.: "Three Dimensional Process and Device Modeling"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis (eingeladen); 09.05.1989 - 11.05.1989; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", 1 (1989), ISBN: 0-948577-33-9; S. 383 - 407. | |
| 118. | Dickinger, P., Nanz, G., Selberherr, S.: "Two-Dimensional Simulation of a Bipolar Dynamic Memory Cell"; Vortrag: Conference on Modelling, Simulation and Control (MSC), Istanbul; 29.06.1989 - 01.07.1989; in: "Proceedings AMSE Conf. Modelling, Simulation and Control", 22 (1989), S. 33 - 38. | |
| 117. | Nanz, G.: "Zweidimensionale Simulation allgemeiner Halbleiterbauelemente "; Vortrag: 2nd Workshop Device Simulation, Gesellschaft für Mathematik und Datenverarbeitung, St. Augustin; 15.11.1989 - 16.11.1989; in: "Proceedings 2nd Workshop Device Simulation", (1989), S. #. | |
| 116. | Thurner, M., Selberherr, S.: "3D MOSFET Device Effects due to Field Oxide"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), S. 245 - 248. https://doi.org/10.1051/jphyscol:1988450 | |
| 115. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: "A New Boundary Condition for Device Simulation Considering Outer Components"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 625 - 636. | |
| 114. | Kovacs, G., Trattnig, G., Langer, E.: "Accurate Determination of Material Constants of Piezoelectric Crystals from SAW Velocity Measurements"; Vortrag: Ultrasonics Symposium, Chicago; 02.10.1988 - 05.10.1988; in: "Proceedings Ultrasonics Symposium", (1988), S. 269 - 272. | |
| 113. | Nanz, G., Kausel, W., Selberherr, S.: "Automatic Grid Control in Device Simulation"; Vortrag: Numerical Grid Generation in Computational Fluid Dynamics Conference, Miami Beach; 05.12.1988 - 09.12.1988; in: "Proceedings Numerical Grid Generation in Computational Fluid Mechanics Conf.", (1988), ISBN: 0-906674-68-9; S. 1039 - 1047. | |
| 112. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: "Avalanche Breakdown in the ALDMOST"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 175 - 181. | |
| 111. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: "BAMBI - A Transient Two-Dimensional Device Simulator Using Implicit Backward Euler's Method and a Totally Self Adaptive Grid"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988). | |
| 110. | Selberherr, S.: "MOS Device Modeling at Liquid-Nitrogen Temperature"; Vortrag: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (eingeladen); 11.12.1988 - 14.12.1988; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (1988), S. 496 - 499. https://doi.org/10.1109/IEDM.1988.32863 | |
| 109. | Hobler, G., Selberherr, S.: "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 09.05.1988 - 10.05.1988; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988). | |
| 108. | Thurner, M., Lindorfer, P., Selberherr, S.: "Numerical Treatment of Nonrectangular Field-Oxide for 3D MOSFET Simulation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Bologna; 26.09.1988 - 28.09.1988; in: "Proceedings SISDEP 88", (1988), S. 375 - 381. | |
| 107. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: "On-Resistance in the ALDMOST"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Montpellier; 13.09.1988 - 16.09.1988; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1988), ISBN: 2-86883-100-1; S. 629 - 632. https://doi.org/10.1051/jphyscol:19884131 | |
| 106. | Selberherr, S.: "Process Modeling"; Vortrag: Microcircuit Engineering Conference, Wien (eingeladen); 20.09.1988 - 22.09.1988; in: "Proceedings of the Microcircuit Engineering Conference", (1988), S. 605 - 610. https://doi.org/10.1016/0167-9317(89)90129-9 | |
| 105. | Selberherr, S.: "Recent Advances in Numerical Device Simulation"; Vortrag: Microelectronic Seminar, Budapest (eingeladen); 10.10.1988 - 13.10.1988; in: "Abstracts Microelectronic Seminar 88", (1988), S. 1. | |
| 104. | Baghai-Wadji, A.R., Männer, O., Selberherr, S., Seifert, F.: "Analysis and Measurement of Transducer End Radiation in SAW Filters on Strongly Coupling Substrates"; Vortrag: Forum Europeen Temps-Frequence, Besancon; 18.03.1987 - 20.03.1987; in: "Proceedings of the 1er Forum Europeen Temps-Frequence", (1987), S. 315 - 319. | |
| 103. | Thurner, M., Selberherr, S.: "Comparison of Long- and Short-Channel MOSFETs Carried Out by 3D-MINIMOS"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), S. 409 - 412. | |
| 102. | Thurner, M., Selberherr, S.: "Die Erweiterung von MINIMOS auf ein 3D Simulationsprogramm"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in: "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x; S. 116 - 121. https://doi.org/10.1007/978-3-7091-8940-5_18 | |
| 101. | Hobler, G., Selberherr, S.: "Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in: "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), S. 225 - 230. | |
| 100. | Selberherr, S.: "Low Temperature MOS Device Modeling"; Vortrag: Meeting of the Electrochemical Society, Low Temperature Electronics and High Temperature Superconductors, Honolulu (eingeladen); 18.10.1987 - 23.10.1987; in: "172nd ECS Meeting", 87-2 (1987), S. 464. | |
| 99. | Selberherr, S.: "Low Temperature MOS Device Modeling"; Vortrag: Meeting of the Electrochemical Society (ECS), Honolulu (eingeladen); 18.10.1987 - 23.10.1987; in: "172nd ECS Meeting", 88-9 (1987), S. 70 - 86. | |
| 98. | Markowich, P., Schmeiser, Ch., Selberherr, S.: "Numerical Methods in Semiconductor Device Simulation"; Vortrag: Numerical Methods and Approximation Theory, Nis; 18.08.1987 - 21.08.1987; in: "Numerical Methods and Approximation Theory", (1987), S. 287 - 299. | |
| 97. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: "Punch-Through in Resurf Devices"; Vortrag: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in: "Abstracts of the International Conference on Modelling and Simulation", 1 (1987), S. 142 - 143. | |
| 96. | Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.: "Punch-Through in Resurf Devices"; Vortrag: International Conference on Modelling and Simulation, Karlsruhe; 20.07.1987 - 22.07.1987; in: "Proceedings of the International Conference on Modelling and Simulation", 2A (1987), S. 63 - 70. | |
| 95. | Selberherr, S.: "The Concept of BAMBI"; Vortrag: Symposium on BAMBI, Västeras (eingeladen); 03.09.1987 - 04.09.1987; in: "Abstracts of the 2nd Symposium on BAMBI", (1987). | |
| 94. | Thurner, M., Selberherr, S.: "The Extension of MINIMOS to a Three Dimensional Simulation Program"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 17.06.1987 - 19.06.1987; in: "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), S. 327 - 332. | |
| 93. | Selberherr, S.: "The Use and Construction of Numerical Simulation Packages Based on Physical Device Models for the Design and Analysis of Silicon VLSI"; Vortrag: Short Course on Semiconductor Device Modelling, Leeds (eingeladen); 30.03.1987 - 03.04.1987; in: "Proceedings Short Course on Semiconductor Device Modelling", (1987), S. 187 - 198. | |
| 92. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: "Two-Dimensional Transient Simulation of the Turn-On Behavior of a planar MOS-Transistor"; Vortrag: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in: "Abstracts of the International Conference on Modelling and Simulation", (1987), S. 50 - 51. | |
| 91. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: "Two-Dimensional Transient Simulation of the Turn-on Behavior of a planar MOS-Transistor"; Vortrag: International Conference on Modelling and Simulation, New Delhi; 29.10.1987 - 31.10.1987; in: "Proceedings of the International Conference on Modelling and Simulation", A (1987), S. 13 - 24. | |
| 90. | Hobler, G., Selberherr, S.: "Verification of Ion Implantation Models by Monte-Carlo Simulations"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Bologna; 14.09.1987 - 17.09.1987; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), S. 445 - 448. | |
| 89. | Kausel, W., Nanz, G., Selberherr, S., Pötzl, H.: "Zweidimensionale transiente Simulation des Einschaltverhaltens eines planaren MOS-Transistors"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1987 - 16.10.1987; in: "Bericht der Informationstagung Mikroelektronik", (1987), ISBN: 3-211-82023-x; S. 100 - 105. https://doi.org/10.1007/978-3-7091-8940-5_15 | |
| 88. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: "A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media"; Vortrag: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1986), S. 39. | |
| 87. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: "A Green's Function Approach to the Electrostatic Problem of Single, Coupled and Comb-like Metallic Structures in Anisotropic Multilayered Media"; Vortrag: International Conference on Modelling and Simulation, Athen; 29.09.1986 - 01.10.1986; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1986), S. 109 - 120. | |
| 86. | Hänsch, W., Werner, C., Selberherr, S.: "A Hot Carrier Analysis Utilizing MINIMOS 3.0"; Vortrag: International Symposium on VLSI Technology, San Diego; 28.05.1986 - 30.05.1986; in: "Proceedings of the International Symposium on VLSI Technology", (1986), S. 63 - 64. | |
| 85. | Budil, M., Guerrero, E., Brabec, T., Selberherr, S., Pötzl, H.: "A New Model for Determination of Point Defect Equilibrium Concentration in Silicon"; Vortrag: International Workshop on Numerical Modelling of Semiconductors (NUMOS), Los Angeles; 11.12.1986 - 12.12.1986; in: "Proceedings of the International Workshop on Numerical Modelling of Semiconductors", (1986), S. 37 - 44. | |
| 84. | Jüngling, W., Hobler, G., Selberherr, S., Pötzl, H.: "Adaptive Grids in Space and Time for Process and Device Simulators"; Vortrag: Numerical Grid Generation in Computational Fluid Dynamics Conference, Landshut; 14.07.1986 - 17.07.1986; in: "Numerical Grid Generation in Computational Fluid Dynamics Conf.", (1986), ISBN: 0-906674-58-1; S. 729 - 739. | |
| 83. | Jüngling, W., Pichler, P., Selberherr, S., Pötzl, H.: "Automation in Process- and Device-Simulators"; Vortrag: International Conference on Automation, Houston; 10.03.1986 - 12.03.1986; in: "Proceedings of the 1986 International Conference on Automation", (1986), S. 530 - 534. | |
| 82. | Selberherr, S.: "BAMBI - The Desire for the Impossible ?"; Vortrag: Symposium on BAMBI, München (eingeladen); 25.02.1986; in: "Abstracts 1st Symposium on BAMBI", (1986). | |
| 81. | Straker, F., Selberherr, S.: "Capacitance Computation for VLSI Structures"; Vortrag: International Conference on Trends in Communications (EUROCON), Paris; 21.04.1986 - 23.04.1986; in: "Proceedings of the International Conference on Trends in Communications", (1986), S. 602 - 608. | |
| 80. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: "Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation"; Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 138 - 145. | |
| 79. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: "Closed-Form Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation"; Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Proceedings of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 146 - 153. | |
| 78. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: "Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part I: One-Dimensional Representation"; Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 21 - 22. | |
| 77. | Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: "Closed-Form Formulae Electrostatic Field Analysis of Metallic Comb-like Structures Containing Isolated and Interconnected Floating Strips of Arbitrary Topological Complexity. Part II: Two-Dimensional Representation"; Vortrag: International Symposium on Numerical Field Calculation in Electrical Engineering (IGTE), Graz; 22.09.1986 - 23.09.1986; in: "Abstracts of the International Symposium on Numerical Field Calculation in Electrical Engineering", (1986), S. 23 - 24. | |
| 76. | Selberherr, S., Jüngling, W.: "Device Simulation - Present Situation and Future Trends"; Vortrag: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg (eingeladen); 05.05.1986 - 07.05.1986; in: "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), S. 7. | |
| 75. | Jüngling, W., Selberherr, S.: "Modeling and Simulation of IC-Fabrication Steps"; Vortrag: Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken, Würzburg (eingeladen); 05.05.1986 - 07.05.1986; in: "Abstracts Diskussionssitzung Device- und Prozesscharakterisierung für höchstkomplexe und ultraschnelle IC-Techniken", (1986), S. 4. | |
| 74. | Budil, M., Jüngling, W., Guerrero, E., Selberherr, S., Pötzl, H.: "Modeling of Point Defect Kinetics During Thermal Oxidation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 384 - 397. | |
| 73. | Baghai-Wadji, A. R., Selberherr, S., Seifert, F.: "Rigorous 3D Electrostatic Field Analysis of SAW Transducers with Closed-Form Formulae"; Vortrag: Ultrasonics Symposium, Williamsburg; 17.11.1986 - 19.11.1986; in: "Proceedings of the Ultrasonics Symposium", (1986), S. 23 - 28. | |
| 72. | Selberherr, S.: "Silicon Device Simulation"; Vortrag: Austin Workshop on Process and Device Simulation, Austin, TX, USA (eingeladen); 17.03.1986 - 18.03.1986; in: "Proceedings of the Austin Workshop on Process and Device Simulation", (1986), S. 1. | |
| 71. | Selberherr, S.: "State of the Art of Computer/Mathematical Simulation Tools"; Vortrag: Workshop on Modeling of Technology and Devices, Utrecht (eingeladen); 04.06.1986; in: "Abstracts of Modeling of Technology and Devices Workshop", (1986), S. 1. | |
| 70. | Selberherr, S.: "The Status of MINIMOS"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea (eingeladen); 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 2 - 15. | |
| 69. | Hobler, G., Guerrero, E., Selberherr, S.: "Two-Dimensional Modeling of Ion Implantation Induced Point Defects"; Vortrag: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 13.11.1986 - 14.11.1986; in: "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1986), S. 10 - 11. | |
| 68. | Hobler, G., Langer, E., Selberherr, S.: "Two-Dimensional Modeling of Ion-Implantation"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 21.07.1986 - 23.07.1986; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x; S. 256 - 270. | |
| 67. | Selberherr, S.: "Bauelementsimulation"; Vortrag: Physik in der Mikroelektronik, Bad Honnef (eingeladen); 07.10.1985 - 11.10.1985; in: "Symposium über Physik in der Mikroelektronik", (1985), S. 1 - 2. | |
| 66. | Selberherr, S.: "Numerical Modeling of MOS-Devices: Methods and Problems"; Vortrag: International Short Course on New Problems and New Solutions for Device and Process Modelling, Dublin (eingeladen); 17.06.1985 - 18.06.1985; in: "Proceedings of the International Short Course on New Problems and New Solutions for Device and Process Modelling", (1985), ISBN: 0-906783-45-3; S. 122 - 137. | |
| 65. | Schmeiser, Ch., Selberherr, S., Weiss, R.: "On Scaling and Norms for Semiconductor Device Simulation"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 501 - 506. | |
| 64. | Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H.: "Process and Device Simulation with One and the Same Program"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 477 - 482. | |
| 63. | Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: "Spatial and Transient Grids for Process and Device Simulators"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 19.06.1985 - 21.06.1985; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1985), ISBN: 0-906783-43-7; S. 320 - 325. | |
| 62. | Markowich, P., Selberherr, S.: "Steady State Semiconductor Device Modelling - A State of the Art Report"; Vortrag: International Conference on Advances in Circuit and Systems, Bejing; 10.06.1985 - 12.06.1985; in: "Proceedings of the International Conference on Advances in Circuit and Systems", (1985), ISBN: 9971-978-35-0; S. 444 - 447. | |
| 61. | Jüngling, W., Pichler, P., Selberherr, S., Pötzl, H.: "ZOMBIE - A Coupled Process-Device Simulator"; Vortrag: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in: "Abstracts of the International Conference on Modelling and Simulation", 1 (1985), S. 137 - 138. | |
| 60. | Jüngling, W., Pichler, P., Selberherr, S., Pötzl, H.: "ZOMBIE - A Coupled Process-Device Simulator"; Vortrag: International Conference on Modelling and Simulation, Monastir; 25.11.1985 - 28.11.1985; in: "Proceedings of the International Conference on Modelling and Simulation", 2A (1985), S. 137 - 146. | |
| 59. | Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H.: "Zweidimensionale Prozeßsimulation"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 15.10.1985 - 17.10.1985; in: "Bericht der Informationstagung Mikroelektronik", (1985), ISBN: 3-211-81893-6; S. 41 - 46. https://doi.org/10.1007/978-3-7091-8821-7_7 | |
| 58. | Franz, G., Franz, A., Selberherr, S.: "2-D Steady State and Transient Simulation of Power Thyristors"; Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 28. | |
| 57. | Franz, G., Franz, A., Selberherr, S.: "2-D Steady State and Transient Simulation of Power Thyristors"; Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 171 - 185. | |
| 56. | Markowich, P., Selberherr, S.: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Vortrag: SIAM Summer Meeting, Seattle; 16.07.1984 - 20.07.1984; in: "Abstracts of SIAM Summer Meeting", (1984), S. 67. | |
| 55. | Markowich, P., Selberherr, S.: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Vortrag: International Conference on Boundary and Interior Layers (BAIL), Dublin (eingeladen); 20.06.1984 - 22.06.1984; in: "Abstracts of the International Conference on Boundary and Interior Layers", (1984), S. 4. | |
| 54. | Franz, A., Franz, G., Selberherr, S.: "BAMBI - a Design Model for Power MOSFETs"; Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 179 - 181. | |
| 53. | Straker, F., Selberherr, S.: "Capacitance Computation for VLSI Structures"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 09.07.1984 - 12.07.1984; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7; S. 39 - 55. | |
| 52. | Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: "Comparison of Advanced Models for Coupled Diffusion"; Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 167 - 169. | |
| 51. | Straker, F., Selberherr, S.: "Computation of VLSI Metalization Capacitance"; Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 13 - 15. | |
| 50. | Straker, F., Selberherr, S.: "Computation of VLSI Metalization Capacitance"; Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 1 - 18. | |
| 49. | Straker, F., Selberherr, S.: "Computation of Wire and Junction Capacitances in VLSI Structures"; Vortrag: International Conference on VLSI Multilevel Interconnection, New Orleans; 21.06.1984 - 22.06.1984; in: "Proceedings of VLSI Multilevel Interconnection Conference", IEEE Cat.No 84CH1999-2 (1984), S. 209 - 217. | |
| 48. | Demel, J., Selberherr, S.: "JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen"; Vortrag: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in: "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3; S. 149 - 153. https://doi.org/10.1007/978-3-642-69706-7_21 | |
| 47. | Franz, A., Franz, G., Selberherr, S.: "Numerical 2-D Simulation of Vertical Power MOSFETs"; Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Abstracts of the International Conference on Modelling and Simulation", 2 (1984), S. 29. | |
| 46. | Franz, A., Franz, G., Selberherr, S.: "Numerical 2-D Simulation of Vertical Power MOSFETs"; Vortrag: International Conference on Modelling and Simulation, Athen; 27.06.1984 - 29.06.1984; in: "Proceedings of the International Conference on Modelling and Simulation", 2.1 (1984), S. 187 - 202. | |
| 45. | Selberherr, S., Pötzl, H.: "Numerische Simulation von Halbleiterbauelementen"; Vortrag: Arbeitsgemeinschaft Simulation (ASIM), Wien; 25.09.1984 - 27.09.1984; in: "Proceedings of the Conference Arbeitsgemeinschaft Simulation (ASIM)", (1984), ISBN: 978-3-540-13393-3; S. 154 - 158. https://doi.org/10.1007/978-3-642-69706-7_22 | |
| 44. | Baghai-Wadji, A. R., Selberherr, S., Seifert, F.: "On the Calculation of Charge, Electrostatic Potential and Capacitance in Generalized SAW Structures"; Vortrag: Ultrasonics Symposium, Dallas; 14.11.1984 - 16.11.1984; in: "Abstracts of the Ultrasonics Symposium", (1984), S. 44 - 48. | |
| 43. | Selberherr, S.: "Process and Device Modeling for VLSI"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Nis (eingeladen); 07.05.1984 - 09.05.1984; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1984), S. 1 - 45. | |
| 42. | Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: "Simulation of Critical IC-Fabrication Steps"; Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 12.11.1984 - 14.11.1984; in: "Abstracts of the Numerical Simulation of VLSI Devices Conference", (1984), S. 7. | |
| 41. | Demel, J., Selberherr, S.: "The Complete Tableau Approach to Simulate VLSI-Networks"; Vortrag: International Conference on Computer-Aided Design (ICCAD), Santa Clara; 12.11.1984 - 15.11.1984; in: "Proceedings of the International Conference on Computer-Aided Design", (1984), ISBN: 0-8186-0607-x; S. 27 - 29. | |
| 40. | Selberherr, S., Griebel, W., Pötzl, H.: "Transport Physics for Modeling Semiconductor Devices"; Vortrag: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea (eingeladen); 09.07.1984 - 12.07.1984; in: "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1984), ISBN: 0-906674-38-7; S. 133 - 152. | |
| 39. | Pichler, P., Jüngling, W., Selberherr, S., Pötzl, H.: "Two-Dimensional Coupled Diffusion Modeling"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1984), ISBN: 0-444-86942-5; S. 187 - 191. | |
| 38. | Pichler, P., Jüngling, W., Selberherr, S., Pötzl, H.: "Two-Dimensional Coupled Diffusion Modeling"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Lille; 10.09.1984 - 13.09.1984; in: "Abstracts of the European Solid-State Device Research Conference (ESSDERC)", (1984), S. 182 - 185. | |
| 37. | Franz, G., Franz, A., Selberherr, S., Markowich, P.: "A Quasi Three Dimensional Semiconductor Device Simulation Using Cylindrical Coordinates"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 122 - 127. | |
| 36. | Agler, W., Markowich, P., Selberherr, S.: "A Singular Perturbation Analysis of Discretisation Methods for the Parabolic Semiconductor Device Equations"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 85 - 90. | |
| 35. | Markowich, P., Selberherr, S.: "A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments"; Vortrag: Segundas Jornadas LatinoAmericanas de Matematica Aplicada, Rio de Janeiro; 12.12.1983 - 16.12.1983; in: "Abstracts Segundas Jornadas LatinoAmericanas de Matematica Aplicada", (1983). | |
| 34. | Langer, E., Selberherr, S., Markowich, P., Ringhofer, Ch.: "Ausbreitung elektroakustischer Wellen in Piezoelektrika"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in: "Bericht der Informationstagung Mikroelektronik", (1983), S. 144 - 148. | |
| 33. | Straker, F., Selberherr, S.: "Computation of Integrated Circuit Interconnect Capacitances"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Zagreb; 26.04.1983 - 28.04.1983; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1983), S. 31 - 39. | |
| 32. | Selberherr, S., Ringhofer, Ch.: "Discretization Methods for the Semiconductor Equations"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway (eingeladen); 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 31 - 45. | |
| 31. | Straker, S., Selberherr, S.: "Kapazitätsberechnung bei VLSI-Strukturen"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 12.10.1983 - 14.10.1983; in: "Bericht der Informationstagung Mikroelektronik", (1983), S. 77 - 83. | |
| 30. | Selberherr, S.: "Modeling Static and Dynamic Behavior of Power Devices"; Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA (eingeladen); 05.12.1983 - 07.12.1983; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", IEEE Cat.No 83CH1973-7 (1983), S. 71 - 74. https://doi.org/10.1109/IEDM.1983.190443 | |
| 29. | Langer, E., Selberherr, S., Markowich, P., Ringhofer, Ch.: "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials"; Vortrag: International Conference on Solid State Transducers, Delft; 31.05.1983 - 03.06.1983; in: "Abstracts of Solid State Transducers Conference 1983", (1983), S. 138 - 139. | |
| 28. | Franz, A., Franz, G., Selberherr, S., Pötzl, H.: "Numerische Simulation von GaAs-Bauelementen"; Vortrag: Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 23.03.1983 - 26.03.1983; in: "Tagungsbericht Grundlagen und Technologie elektronischer Bauelemente", (1983), S. 50 - 54. | |
| 27. | Jüngling, W., Guerrero, E., Selberherr, S.: "On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 144 - 149. | |
| 26. | Langer, E., Selberherr, S., Markowich, P.: "Surface and Bulk Wave Velocities in Arbitrary Anisotropic Piezoelectric Materials"; Vortrag: Ultrasonics Symposium, Atlanta; 31.10.1983 - 02.11.1983; in: "Proceedings of the Ultrasonics Symposium", (1983), S. 1157 - 1160. | |
| 25. | Franz, A., Franz, G., Selberherr, S., Markowich, P.: "The Influence of Various Mobility Models on the Iteration Process and Solution of the Basic Semiconductor Equations"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Galway; 15.06.1983 - 17.06.1983; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1983), ISBN: 0-906783-20-8; S. 117 - 121. | |
| 24. | Selberherr, S., Schütz, A., Pötzl, H.: "Two Dimensional MOS-Transistor Modeling"; Vortrag: VLSI Process and Device Modeling Summer Course, Heverlee (eingeladen); 07.06.1983 - 10.06.1983; in: "Proceedings of VLSI Process and Device Modeling Summer Course 1983", (1983), S. 1 - 38. | |
| 23. | Machek, J., Selberherr, S.: "A Novel Finite-Element Approach to Device Modeling"; Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 9. | |
| 22. | Ringhofer, Ch., Markowich, P., Selberherr, S., Lentini, M.: "A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations"; Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 6. | |
| 21. | Selberherr, S., Schütz, A., Pötzl, H.: "Design of Integrated Circuits: Device Modeling"; Vortrag: Yugoslav International Conference on Microelectronics (MIEL), Banja Luka (eingeladen); 14.04.1982 - 16.04.1982; in: "Proceedings of the Yugoslav International Conference on Microelectronics (MIEL)", (1982), S. 47 - 84. | |
| 20. | Franz, A., Franz, G., Selberherr, S., Ringhofer, Ch., Markowich, P.: "Finite Boxes - A Generalization of the Finite Difference Method Utmost Suitable for Semiconductor Device Simulation"; Vortrag: International Conference on Numerical Simulation of VLSI Devices, Boston; 02.11.1982 - 04.11.1982; in: "Abstracts of Numerical Simulation of VLSI Devices Conference", (1982), S. 3. | |
| 19. | Langer, E., Selberherr, S., Ringhofer, Ch., Markowich, P.: "Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials"; Vortrag: Ultrasonics Symposium, San Diego; 27.10.1982 - 29.10.1982; in: "Proceedings of the Ultrasonics Symposium", (1982), S. 350 - 353. | |
| 18. | Selberherr, S.: "Some Comments on X3J3/S6.81 Chapter 3"; Vortrag: Meeting of the Fortran Experts Group, Wien; 14.06.1982 - 17.06.1982; in: "Minutes of the Fortran Experts Group", X3J3/148 (1982), S. 109 - 110. | |
| 17. | Selberherr, S., Schütz, A., Pötzl, H.: "Two Dimensional MOS-Transistor Modeling"; Vortrag: International Conference on Computer-Aided Design of IC Fabrication Processes, Stanford (eingeladen); 18.08.1982 - 19.08.1982; in: "Proceedings of Computer-Aided Design of IC Fabrication Processes Conference", (1982), S. 1 - 20. | |
| 16. | Selberherr, S., Schütz, A., Pötzl, H.: "Two Dimensional MOS-Transistor Modeling"; Vortrag: NATO-ASI-Workshop: Process and Device Simulation for MOS -VLSI Circuits, Urbino (eingeladen); 12.07.1982 - 23.07.1982; in: "Proceedings of Process and Device Simulation for MOS-VLSI Circuits", (1982), S. 1 - 93. | |
| 15. | Langer, E., Selberherr, S., Mader, H.: "A Consistent Analysis of Bulk-Barrier Diodes"; Vortrag: European Solid-State Device Research Conference (ESSDERC), Toulouse; 14.09.1981 - 17.09.1981; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1981), S. 141 - 142. | |
| 14. | Langer, E., Selberherr, S., Mader, H.: "A Numerical Analysis of Bulk-Barrier Diodes"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8; S. 218 - 222. | |
| 13. | Schütz, A., Selberherr, S., Pötzl, H.: "Numerical Analysis of Breakdown Phenomena in MOSFETs"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 15.06.1981 - 19.06.1981; in: "Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1981), ISBN: 0-906783-03-8; S. 270 - 274. | |
| 12. | Langer, E., Selberherr, S., Mader, H.: "Numerische Analyse der Bulk-Barrier Diode"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1981), S. 63 - 67. | |
| 11. | Langer, E., Selberherr, S., Mader, H.: "Numerische Analyse der Bulk-Barrier Diode"; Vortrag: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 01.04.1981 - 04.04.1981; in: "Kursunterlagen Grundlagen und Technologie elektronischer Bauelemente", (1981), S. 87 - 93. | |
| 10. | Schütz, A., Selberherr, S., Pötzl, H.: "Zweidimensionale Simulation des Lawinendurchbruchs in MOS Transistoren"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 14.10.1981 - 16.10.1981; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1981), S. 68 - 72. | |
| 9. | Selberherr, S., Schütz, A., Pötzl, H.: "MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren"; Vortrag: Fortbildungsseminar Praxis der Großintegration, Dortmund (eingeladen); 27.05.1980 - 31.05.1980; in: "Kursunterlagen Praxis der Großintegration", VA8 (1980), S. 1 - 44. | |
| 8. | Pötzl, H., Selberherr, S., Schütz, A.: "MOS-Großintegration"; Vortrag: Winterschule Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik, Mariapfarr; 25.02.1980 - 01.03.1980; in: "Kursunterlagen Neuere Entwicklungen auf dem Gebiete der Halbleiterphysik", (1980), S. 5 - 6. | |
| 7. | Selberherr, S., Schütz, A., Pötzl, H.: "The Sensitivity of Short Channel MOSFETs on Technological Tolerances"; Vortrag: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), S. 116 - 118. | |
| 6. | Schütz, A., Selberherr, S., Pötzl, H.: "Two Dimensional Analysis of the Avalanche Effect in MOS Transistors"; Vortrag: European Solid-State Device Research Conference (ESSDERC), York; 15.09.1980 - 18.09.1980; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1980), S. 113 - 115. | |
| 5. | Fichtner, W., Losehand, R., Guerrero, E., Selberherr, S., Schultz, H.: "Exact First Principles Modelling of Short-Channel VMOS Transistors"; Vortrag: International Conference on Computer Aided Design and Manufacture of Electronic Components, Circuits and Systems (CADMECCS), Brighton; 03.07.1979 - 06.07.1979; in: "Proc.Intl.Conf.on Computer Aided Design and Manufacture of Electronic Components,Circuits and Systems", (1979), S. 28 - 30. | |
| 4. | Selberherr, S., Fichtner, W., Pötzl, H.: "MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in: "Abstr.Conf.on Numerical Analysis of Semiconductor Devices", (1979), S. 29. | |
| 3. | Selberherr, S., Fichtner, W., Pötzl, H.: "MINIMOS - a Program Package to Facilitate MOS Device Design and Analysis"; Vortrag: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 27.06.1979 - 29.06.1979; in: "Proceedings Conf.on Numerical Analysis of Semiconductor Devices", (1979), ISBN: 0-906783-00-3; S. 275 - 279. | |
| 2. | Selberherr, S., Pötzl, H.: "Two Dimensional MOS-Transistor Modelling"; Vortrag: European Solid-State Device Research Conference (ESSDERC), München; 10.09.1979 - 14.09.1979; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1979), S. 133. | |
| 1. | Selberherr, S., Pötzl, H.: "Zweidimensionale Modellierung von MOS-Transistoren"; Vortrag: Informationstagung Mikroelektronik (ME), Wien; 10.10.1979 - 13.10.1979; in: "Bericht der Informationstagung Mikroelektronik (ME)", (1979), S. 52 - 57. | |