Papers in Journals

922.		Bendra, M., Lacerda de Orio, R., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2025). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. Solid-State Electronics, 223, Article 109027. https://doi.org/10.1016/j.sse.2024.109027 (reposiTUm)

921.		Cerdeira, A., Estrada, M., Mounir, A., Grasser, T., Iniguez, B. (2025). Analysis of the Mobility Behavior of MOS₂ 2D FETs. Solid-State Electronics, 224, 1–7. https://doi.org/10.1016/j.sse.2024.109032 (reposiTUm)

920.		Borghi, M., Giovanelli, G., Montecchi, M., Capelli, R., Mescola, A., Paolicelli, G., D’Addato, S., Grasser, T., Pasquali, L. (2025). Comprehensive Study of SrF₂ Growth on Highly Oriented Pyrolytic Graphite (HOPG): Temperature-Dependent Van Der Waals Epitaxy. Applied Surface Science, 680, 1–9. https://doi.org/10.1016/j.apsusc.2024.161310 (reposiTUm)

919.		Speckmann, C., Angeletti, A., Kývala, L., Lamprecht, D., Herterich, F., Mangler, C., Filipovic, L., Dellago, C., Franchini, C., Kotakoski, J. (2025). Electron‐Beam‐Induced Adatom‐Vacancy‐Complexes in Mono‐ and Bilayer Phosphorene. Advanced Materials Interfaces, Article 2400784. https://doi.org/10.1002/admi.202400784 (reposiTUm)

918.		Saleh, A. S., Croes, K., Ceric, H., De Wolf, I., Zahedmanesh, H. (2025). Novel Concept-Oriented Synthetic Data Approach for Training Generative AI-Driven Crystal Grain Analysis Using Diffusion Model. Computational Materials Science, 251, Article 113723. https://doi.org/10.1016/j.commatsci.2025.113723 (reposiTUm)

917.		Ghosh, R., Provias, A., Karl, A., Wilhelmer, C., Knobloch, T., Davoudi, M. R., Sattari Esfahlan, S., Waldhör, D., Grasser, T. (2025). Theoretical Insights Into the Impact of Border and Interface Traps on Hysteresis in Monolayer MoS₂ FETs. Microelectronic Engineering, 299, Article 112333. https://doi.org/10.1016/j.mee.2025.112333 (reposiTUm)

916.		Niksirat, A., Soleimani, M., Lashani Zand, A., Pourfath, M. (2024). A Comprehensive Investigation of Ag₇P₃X₁₁ (X={O, S, and Se}) Solid-State Silver Superionic Conductors. Journal of Materials Chemistry A, 12(22), 13391–13399. https://doi.org/10.1039/D4TA01341G (reposiTUm)

915.		Saleh, A. S., Croes, K., Ceric, H., De Wolf, I., Zahedmanesh, H. (2024). A Comprehensive Microstructure-Aware Electromigration Modeling Framework; Investigation of the Impact of Trench Dimensions in Damascene Copper Interconnects. Nanomaterials, 14(22), 1–15. https://doi.org/10.3390/nano14221834 (reposiTUm)

914.		Stampfer, P., Roger, F., Cvitkovich, L., Grasser, T., Waltl, M. (2024). A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes. IEEE Transactions on Device and Materials Reliability, 24(2), 161–167. https://doi.org/10.1109/TDMR.2024.3382396 (reposiTUm)

913.		Hu, Z., Li, J., Chen, R., Shang, D., Wei, Y., Wang, Z., Li, L., Filipovic, L. (2024). A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor Manufacturing. Small, 20(51), Article 2405574. https://doi.org/10.1002/smll.202405574 (reposiTUm)

912.		Ravichandran, H., Knobloch, T., Subbulakshmi Radhakrishnan, S., Wilhelmer, C., Stepanoff, S., Stampfer, B., Ghosh, S., Oberoi, A., Waldhoer, D., Chen, C., Redwing, J. M., Wolfe, D. E., Grasser, T., Das, S. (2024). A Stochastic Encoder Using Point Defects in Two-Dimensional Materials. Nature Communications, 15(1), 1–11. https://doi.org/10.1038/s41467-024-54283-1 (reposiTUm)

911.		Hamidi, H., Shojaei, F., Pourfath, M., Vaez zadeh, M. (2024). Adsorption Behavior of Some Green Corrosion Inhibitors on Fe (110) Surface: The Critical Role of D-π Interactions in Binding Strength. Applied Surface Science, 655, Article 159425. https://doi.org/10.1016/j.apsusc.2024.159425 (reposiTUm)

910.		Bendra, M., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2024). Advanced Modeling and Simulation of Multilayer Spin–transfer Torque Magnetoresistive Random Access Memory With Interface Exchange Coupling. Micromachines, 15(5), Article 568. https://doi.org/10.3390/mi15050568 (reposiTUm)

909.		Aslam, M. A., Leitner, S., Tyagi, S., Provias, A., Tkachuk, V., Pavlica, E., Dienstleder, M., Knez, D., Watanabe, K., Taniguchi, T., Yan, D., Shi, Y., Knobloch, T., Waltl, M., Schwingenschlögl, U., Grasser, T., Matković, A. (2024). All Van Der Waals Semiconducting PtSe₂ Field Effect Transistors With Low Contact Resistance Graphite Electrodes. Nano Letters, 24(22), 6529–6537. https://doi.org/10.1021/acs.nanolett.4c00956 (reposiTUm)

908.		Smith, N., Berens, J., Pobegen, G., Grasser, T., Shluger, A. (2024). Al–O–Al Defect Complexes as Possible Candidates for Channel Electron Mobility Reducing Trapping Centers in 4h-SiC Metal–oxide–semiconductor Field-Effect Transistors. Journal of Applied Physics, 136(8), 1–9. https://doi.org/10.1063/5.0213528 (reposiTUm)

907.		Patoary, N. H., Mamun, F. A., Xie, J., Grasser, T., Sanchez Esqueda, I. (2024). Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS₂ FETs. Advanced Electronic Materials, 10(11), Article 2400152. https://doi.org/10.1002/aelm.202400152 (reposiTUm)

906.		Propst, D., Joudi, W., Längle, M., Madsen, J., Kofler, C., Mayer, B., Lamprecht, D., Mangler, C., Filipovic, L., Susi, T., Kotakoski, J. (2024). Automated Image Acquisition and Analysis of Graphene and Hexagonal Boron Nitride From Pristine to Highly Defective and Amorphous Structures. Scientific Reports, 14(1), Article 26939. https://doi.org/10.1038/s41598-024-77740-9 (reposiTUm)

905.		Cvitkovich, L., Stano, P., Wilhelmer, C., Waldhör, D., Loss, D., Niquet, Y. M., Grasser, T. (2024). Coherence Limit Due to Hyperfine Interaction With Nuclei in the Barrier Material of Si Spin Qubits. Physical Review Applied, 22(6), Article 064089. https://doi.org/10.1103/PhysRevApplied.22.064089 (reposiTUm)

904.		Sverdlov, V., Selberherr, S. (2024). Electron and Spin Transport in Semiconductor and Magnetoresistive Devices. Solid-State Electronics, 218, Article 108962. https://doi.org/10.1016/j.sse.2024.108962 (reposiTUm)

903.		Panarella, L., Kaczer, B., Smets, Q., Tyaginov, S., Saraza-Canflanca, P., Vici, A., Verreck, D., Schram, T., Lin, D., Knobloch, T., Grasser, T., Lockhart de la Rosa, C., Kar, G. S., Afanas’ev, V. (2024). Evidence of Contact-Induced Variability in Industrially-Fabricated Highly-Scaled MoS₂ FETs. Npj 2D Materials and Applications, 8(1), 1–9. https://doi.org/10.1038/s41699-024-00482-9 (reposiTUm)

902.		Waltl, M., Stampfer, B., Grasser, T. (2024). Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements. IEEE Transactions on Device and Materials Reliability, 24(2), 168–173. https://doi.org/10.1109/TDMR.2024.3395907 (reposiTUm)

901.		Franckel, M. L. D., Turiansky, M. E., Waldhör, D., Van De Walle, C. G. (2024). First-Principles Study of Proton Migration in Indium Oxide. Physical Review B, 110(22), 1–6. https://doi.org/10.1103/PhysRevB.110.L220101 (reposiTUm)

900.		Grasser, T., Waltl, M., Knobloch, T. (2024). Fluoride Dielectrics for 2D Transistors. Nature Nanotechnology, 19(7), 880–881. https://doi.org/10.1038/s41565-024-01710-5 (reposiTUm)

899.		Feil, M., Waschneck, K., Reisinger, H., Berens, J., Aichinger, T., Prigann, S., Pobegen, G., Salmen, P., Rescher, G., Waldhör, D., Vasilev, A., Gustin, W., Waltl, M., Grasser, T. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental. IEEE Transactions on Electron Devices, 71(7), 4210–4217. https://doi.org/10.1109/TED.2024.3397636 (reposiTUm)

898.		Grasser, T., Feil, M. W., Waschneck, K., Reisinger, H., Berens, J., Waldhör, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., Pobegen, G. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling. IEEE Transactions on Electron Devices, 71(7), 4218–4226. https://doi.org/10.1109/TED.2024.3397629 (reposiTUm)

897.		Hosseini, M., Soleimani, M., Shojaei, F., Pourfath, M. (2024). Graphsene as a Novel Porous Two-Dimensional Carbon Material for Enhanced Oxygen Reduction Electrocatalysis. Scientific Reports, 14, Article 9129. https://doi.org/10.1038/s41598-024-59756-3 (reposiTUm)

896.		Söll, A., Lopriore, E., Ottesen, A., Luxa, J., Pasquale, G., Sturala, J., Hájek, F., Jarý, V., Sedmidubsky, D., Mosina, K., Sokolovic, I., Rasouli, S., Grasser, T., Diebold, U., Kis, A., Sofer, Z. (2024). High-κ Wide-Gap Layered Dielectric for Two-Dimensional Van Der Waals Heterostructures. ACS Nano, 18(15), 10397–10406. https://doi.org/10.1021/acsnano.3c10411 (reposiTUm)

895.		Borghi, M., Mescola, A., Paolicelli, G., Montecchi, M., D’Addato, S., Vacondio, S., Bursi, L., Ruini, A., Doyle, B. P., Grasser, T., Pasquali, L. (2024). Initial Stages of Growth and Electronic Properties of Epitaxial SrF₂ Thin Films on Ag(111). Applied Surface Science, 656, 1–11. https://doi.org/10.1016/j.apsusc.2024.159724 (reposiTUm)

894.		Shao, H., Reiter, T., Chen, R., Li, J., Hu, Z., Wei, Y., Li, L., Filipovic, L. (2024). Loading Effect During SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors. ACS Applied Electronic Materials, 6(11), 8124–8133. https://doi.org/10.1021/acsaelm.4c01462 (reposiTUm)

893.		Cvitkovich, L., Fehringer, F., Wilhelmer, C., Milardovich, D., Waldhör, D., Grasser, T. (2024). Machine Learning Force Field for Thermal Oxidation of Silicon. Journal of Chemical Physics, 161(14), Article 144706. https://doi.org/10.1063/5.0220091 (reposiTUm)

892.		Birschitzky, V., Sokolovic, I., Prezzi, M., Palotás, K., Setvin, M., Diebold, U., Reticcioli, M., Franchini, C. (2024). Machine Learning-Based Prediction of Polaron-Vacancy Patterns on the TiO₂(110) Surface. Npj Computational Materials, 10(1), Article 89. https://doi.org/10.1038/s41524-024-01289-4 (reposiTUm)

891.		Jorstad, N. P., Fiorentini, S., Ender, J., Wolfgang Goes, Selberherr, S., Sverdlov, V. (2024). Micromagnetic Modeling of SOT-MRAM Dynamics. PHYSICA B-CONDENSED MATTER, 676, Article 415612. https://doi.org/10.1016/j.physb.2023.415612 (reposiTUm)

890.		Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2024). Micromagnetic Modeling of Double Spin-Torque Magnetic Tunnel Junction Devices. PHYSICA B-CONDENSED MATTER, 688, Article 416124. https://doi.org/10.1016/j.physb.2024.416124 (reposiTUm)

889.		Reiter, T., Aguinsky, L. F., Souza Berti Rodrigues, F., Weinbub, J., Hössinger, A., Filipovic, L. (2024). Modeling the Impact of Incomplete Conformality During Atomic Layer Processing. Solid-State Electronics, 211, Article 108816. https://doi.org/10.1016/j.sse.2023.108816 (reposiTUm)

888.		Ballicchia, M., Etl, C., Nedjalkov, M., Weinbub, J. (2024). Non-Uniform Magnetic Fields for Single-Electron Control. Nanoscale, 16(22), 10819–10826. https://doi.org/10.1039/D3NR05796H (reposiTUm)

887.		Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2024). Numerical Study of Two-Terminal SOT-MRAM. Physica B: Condensed Matter, 673, 1–6. https://doi.org/10.1016/j.physb.2023.415362 (reposiTUm)

886.		Stephanie, M. V., Pham, L., Schindler, A., Grasser, T., Waltl, M., Schrenk, B. (2024). Photonic Neuron With on Frequency-Domain ReLU Activation Function. Journal of Lightwave Technology, 42(22), 7919–7928. https://doi.org/10.1109/JLT.2024.3413976 (reposiTUm)

885.		Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., Grasser, T. (2024). Polaron Formation in the Hydrogenated Amorphous Silicon Nitride Si₃N₄ : H. Physical Review B, 110(4), 1–12. https://doi.org/10.1103/PhysRevB.110.045201 (reposiTUm)

884.		Illarionov, Yu. Yu., Karl, A., Smets, Q., Kaczer, B., Knobloch, T., Panarella, L., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T. (2024). Process Implications on the Stability and Reliability of 300 Mm FAB MoS₂ Field-Effect Transistors. Npj 2D Materials and Applications, 8(1), 1–7. https://doi.org/10.1038/s41699-024-00445-0 (reposiTUm)

883.		Antonov, V. A., Tikhonenko, F. V., Popov, V. P., Miakonkikh, A. V., Rudenko, K. V., Sverdlov, V. (2024). SOS Pseudo-FeFETs After Furnace or Rapid Annealings and Thinning by Thermal Oxidation. Solid-State Electronics, 215, 1–6. https://doi.org/10.1016/j.sse.2023.108821 (reposiTUm)

882.		Soleimani, M., Shojaei, F., Pourfath, M. (2024). Solar-Driven Water Splitting: Theoretical Insights Into M₂Te₅ (M=Al, In) Monolayer Photocatalysts. International Journal of Hydrogen Energy, 79, 666–675. https://doi.org/10.1016/j.ijhydene.2024.06.345 (reposiTUm)

881.		Faber, T., Filipovic, L., Koster, L. J. A. (2024). The Hot Phonon Bottleneck Effect in Metal Halide Perovskites. Journal of Physical Chemistry Letters, 15, 12601–12607. https://doi.org/10.1021/acs.jpclett.4c03133 (reposiTUm)

880.		Feil, M. W., Weger, M., Reisinger, H., Aichinger, T., Kabakow, A., Waldhör, D., Jakowetz, A. C., Prigann, S., Pobegen, G., Gustin, W., Waltl, M., Bockstedte, M., Grasser, T. (2024). Time-Gated Optical Spectroscopy of Field-Effect-Stimulated Recombination via Interfacial Point Defects in Fully Processed Silicon Carbide Power MOSFETs. Physical Review Applied, 22(2), Article 024075. https://doi.org/10.1103/PhysRevApplied.22.024075 (reposiTUm)

879.		Shen, Y., Zhu, K., Xiao, Y., Waldhör, D., Basher Yassin, A. H., Knobloch, T., Pazos, S., Liang, X., Zheng, W., Yuan, Y., Roldan, J. B., Schwingenschlögl, U., Tian, H., Wu, H., Schranghamer, T. F., Trainor, N., Redwing, J. M., Das, S., Grasser, T., Lanza, M. (2024). Two-Dimensional-Materials-Based Transistors Using Hexagonal Boron Nitride Dielectrics and Metal Gate Electrodes With High Cohesive Energy. Nature Electronics, 7(10), 856–867. https://doi.org/10.1038/s41928-024-01233-w (reposiTUm)

878.		Illarionov, Yu. Yu., Knobloch, T., Uzlu, B., Banshchikov, A., Ivanov, I. A., Sverdlov, V., Otto, M., Stoll, S. L., Vexler, M., Waltl, M., Wang, Z., Manna, B., Neumaier, D., Lemme, M., Sokolov, N. S., Grasser, T. (2024). Variability and High Temperature Reliability of Graphene Field-Effect Transistors With Thin Epitaxial CaF₂ Insulators. Npj 2D Materials and Applications, 8(1), 1–10. https://doi.org/10.1038/s41699-024-00461-0 (reposiTUm)

877.		Etl, C., Ballicchia, M., Nedjalkov, M., Weinbub, J. (2024). Wigner Transport in Linear Electromagnetic Fields. JOURNAL OF PHYSICS A-MATHEMATICAL AND THEORETICAL, 57(11), Article 115201. https://doi.org/10.1088/1751-8121/ad29a8 (reposiTUm)

876.		Souza Berti Rodrigues, F., Aguinsky, L. F., Lenz, C., Hössinger, A., Weinbub, J. (2023). 3D Modeling of Feature-Scale Fluorocarbon Plasma Etching in Silica. Journal of Computational Electronics, 22(5), 1558–1563. https://doi.org/10.1007/s10825-023-02068-y (reposiTUm)

875.		Lenz, C., Aguinsky, L. F., Hössinger, A., Weinbub, J. (2023). A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set Functions. Journal of Scientific Computing, 94(3), Article 71. https://doi.org/10.1007/s10915-023-02133-5 (reposiTUm)

874.		Lenz, C., Aguinsky, L. F., Hössinger, A., Weinbub, J. (2023). A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set Functions. Journal of Scientific Computing, 94(3), 1–21. https://doi.org/10.1007/s10915-023-02133-5 (reposiTUm)

873.		Hadamek, T., Jorstad, N. P., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2023). A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. Micromachines, 14(8), 1–14. https://doi.org/10.3390/mi14081581 (reposiTUm)

872.		Yazdanpanah Goharrizi, A., Mojarani Barzoki, A., Selberherr, S., Filipovic, L. (2023). A Theoretical Study of Armchair Antimonene Nanoribbons in the Presence of Uniaxial Strain Based on First-Principles Calculations. ACS Applied Electronic Materials, 5(8), 4514–4522. https://doi.org/10.1021/acsaelm.3c00686 (reposiTUm)

871.		Soleimani, M., Pourfath, M. (2023). A Comprehensive Investigation of the Plasmonic-Photocatalytic Properties of Gold Nanoparticles for CO₂ Conversion to Chemicals. Nanoscale, 15(15), 7051–7067. https://doi.org/10.1039/d3nr00566f (reposiTUm)

870.		Saleh, A. S., Croes, K., Ceric, H., De Wolf, I., Zahedmanesh, H. (2023). A Framework for Combined Simulations of Electromigration Induced Stress Evolution, Void Nucleation, and Its Dynamics: Application to Nano-Interconnect Reliability. Journal of Applied Physics, 134(13), 1–12. https://doi.org/10.1063/5.0165949 (reposiTUm)

869.		Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 (reposiTUm)

868.		Stampfer, P., Stampfer, B., Grasser, T., Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods. IEEE Transactions on Electron Devices, 70(8), 4320–4325. https://doi.org/10.1109/TED.2023.3286798 (reposiTUm)

867.		Stampfer, P., Stampfer, B., Grasser, T., Waltl, M. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods. IEEE Transactions on Electron Devices, 70(8), 4326–4331. https://doi.org/10.1109/TED.2023.3286792 (reposiTUm)

866.		Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. ECS Transactions, 111(1), 181–186. https://doi.org/10.1149/11101.0181ecst (reposiTUm)

865.		Mounir, A., Iniguez, B., Lime, F., Kloes, A., Knobloch, T., Grasser, T. (2023). Compact I-V Model for Back-Gated and Double-Gated TMD FETs. Solid-State Electronics, 207, 1–5. https://doi.org/10.1016/j.sse.2023.108702 (reposiTUm)

864.		Waldhoer, D., Schleich, C., Michl, J. D., Grill, A., Claes, D., Karl, A., Knobloch, T., Rzepa, G., Franco, J., Kaczer, B., Waltl, M., Grasser, T. (2023). Comphy V3.0—A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices. Microelectronics Reliability, 146, 1–15. https://doi.org/10.1016/j.microrel.2023.115004 (reposiTUm)

863.		Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023). Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices. Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 (reposiTUm)

862.		Medina-Bailon, C., Nedialkov, M. H., Georgiev, V., Selberherr, S., Asenov, A. (2023). Comprehensive Mobility Study of Silicon Nanowire Transistors Using Multi-Subband Models. Nano Express, 4(2), Article 025005. https://doi.org/10.1088/2632-959X/acdb8a (reposiTUm)

861.		Lashani Zand, A., Niksirat, A., Sanaee, Z., Pourfath, M. (2023). Comprehensive Study of Lithium Diffusion in Si/C-Layer and Si/C₃n₄ Composites in a Faceted Crystalline Silicon Anode for Fast-Charging Lithium-Ion Batteries. ACS Omega, 8(47), 44698–44707. https://doi.org/10.1021/acsomega.3c05523 (reposiTUm)

860.		Akhound, M. A., Soleimani, M., Pourfath, M. (2023). Controllable Gas Adsorption via Inter-Coupled Ferroelectricity in In₂Se₃ Monolayer. Materials Today Chemistry, 31, 101626. https://doi.org/10.1016/j.mtchem.2023.101626 (reposiTUm)

859.		Filipovic, L., Baumgartner, O., Klemenschits, X., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M. (2023). DTCO Flow for Air Spacer Generation and Its Impact on Power and Performance at N7. Solid-State Electronics, 199, Article 108527. https://doi.org/10.1016/j.sse.2022.108527 (reposiTUm)

858.		Cvitkovich, L., Waldhör, D., El-Sayed, A.-M., Jech, M., Wilhelmer, C., Grasser, T. (2023). Dynamic Modeling of Si(100) Thermal Oxidation: Oxidation Mechanisms and Realistic Amorphous Interface Generation. Applied Surface Science, 610, Article 155378. https://doi.org/10.1016/j.apsusc.2022.155378 (reposiTUm)

857.		Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L. (2023). Effect of Mask Geometry Variation on Plasma Etching Profiles. Micromachines, 14(3), Article 665. https://doi.org/10.3390/mi14030665 (reposiTUm)

856.		Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L. (2023). Effect of Mask Geometry Variation on Plasma Etching Profiles. Micromachines, 14(3), Article 665. https://doi.org/10.3390/mi14030665 (reposiTUm)

855.		Feil, M. W., Reisinger, H., Kabakow, A., Aichinger, T., Schleich, C., Vasilev, A., Waldhör, D., Waltl, M., Gustin, W., Grasser, T. (2023). Electrically Stimulated Optical Spectroscopy of Interface Defects in Wide-Bandgap Field-Effect Transistors. Communications Engineering, 2(1), 1–10. https://doi.org/10.1038/s44172-023-00053-8 (reposiTUm)

854.		Ceric, H., Zahedmanesh, H., Croes, K., Lacerda de Orio, R., Selberherr, S. (2023). Electromigration-Induced Void Evolution and Failure of Cu/SiCN Hybrid Bonds. Journal of Applied Physics, 133(10), Article 105101. https://doi.org/10.1063/5.0134692 (reposiTUm)

853.		Knobloch, T., Selberherr, S., Grasser, T. (2023). High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits. ECS Transactions, 111(1), 219–228. https://doi.org/10.1149/11101.0219ecst (reposiTUm)

852.		Achleitner, F., Arnold, A., Mehrmann, V. (2023). Hypocoercivity and Hypocontractivity Concepts for Linear Dynamical Systems. ELECTRONIC JOURNAL OF LINEAR ALGEBRA, 39, 33–61. https://doi.org/10.13001/ela.2023.7531 (reposiTUm)

851.		Hernandez, Y., Schleich, C., Stampfer, B., Grasser, T., Waltl, M. (2023). Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs. Materials Science Forum, 1092, 193–200. https://doi.org/10.4028/p-7c79an (reposiTUm)

850.		Stampfer, P., Roger, F., Grasser, T., Waltl, M. (2023). Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes. IEEE Transactions on Electron Devices, 70(11), 5738–5744. https://doi.org/10.1109/TED.2023.3315225 (reposiTUm)

849.		HosseinpourRokni, M., Naderi, R., Soleimani, M., Kowsari, E., Pourfath, M. (2023). Indirect Interactions Between the Ionic Liquid and Cu Surface in 0.5 M HCl: A Novel Mechanism Explaining Cathodic Corrosion Inhibition. Corrosion Science, 216, Article 111100. https://doi.org/10.1016/j.corsci.2023.111100 (reposiTUm)

848.		Schleich, C., Feil, M. W., Waldhör, D., Vasilev, A., Grasser, T., Waltl, M. (2023). Lifetime Projection of Bipolar Operation of SiC DMOSFET. Materials Science Forum, 1091, 73–77. https://doi.org/10.4028/p-9i494d (reposiTUm)

847.		Leroch, S., Eder, S., Varga, M., Rodríguez Ripoll, M. (2023). Material Point Simulations as a Basis for Determining Johnson–Cook Hardening Parameters via Instrumented Scratch Tests. International Journal of Solids and Structures, 267, Article 112146. https://doi.org/10.34726/3547 (reposiTUm)

846.		Ceric, H., Lacerda de Orio, R., Selberherr, S. (2023). Microstructural Impact on Electromigration Reliability of Gold Interconnects. Solid-State Electronics, 200, Article 108528. https://doi.org/10.1016/j.sse.2022.108528 (reposiTUm)

845.		Aguinsky, L. F., Souza Berti Rodrigues, F., Reiter, T., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J. (2023). Modeling Incomplete Conformality During Atomic Layer Deposition in High Aspect Ratio Structures. Solid-State Electronics, 201, Article 108584. https://doi.org/10.1016/j.sse.2022.108584 (reposiTUm)

844.		Hadamek, T., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2023). Modeling Thermal Effects in STT-MRAM. Solid-State Electronics, 200, Article 108522. https://doi.org/10.1016/j.sse.2022.108522 (reposiTUm)

843.		Gull, J., Kosina, H. (2023). Monte Carlo Study of Electron–electron Scattering Effects in FET Channels. Solid-State Electronics, 208, Article 108730. https://doi.org/10.1016/j.sse.2023.108730 (reposiTUm)

842.		Garcia-Barrientos, A., Nikolova, N., Filipovic, L., Gutierez-D., E. A., Serrano, V., Macias-Velasquez, S., Zarate-Galvez, S. (2023). Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K. Crystals, 13(9), Article 1398. https://doi.org/10.3390/cryst13091398 (reposiTUm)

841.		Ravichandran, H., Knobloch, T., Pannone, A., Karl, A., Stampfer, B., Waldhör, D., Zheng, Y., Sakib, N., Karim Sadaf, M., Pendurthi, R., Torsi, R., Robinson, J. A., Grasser, T., Das, S. (2023). Observation of Rich Defect Dynamics in Monolayer MoS₂. ACS Nano, 17(15), 14449–14460. https://doi.org/10.1021/acsnano.2c12900 (reposiTUm)

840.		Zarate-Galvez, S., Garcia-Barrientos, A., Lastras-Martinez, L. F., Cardenas-Juarez, M., Macias-Velasquez, S., Filipovic, L., Arce-Casas, A. (2023). Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in an InGaN/GaN Blue Light-Emitting Diode. ECS Journal of Solid State Science and Technology, 12(7), Article 076014. https://doi.org/10.1149/2162-8777/ace7c4 (reposiTUm)

839.		Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., Grasser, T. (2023). Over- And Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (A-Si3N4). Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 (reposiTUm)

838.		Vasilev, A., Feil, M. W., Schleich, C., Stampfer, B., Rzepa, G., Pobegen, G., Grasser, T., Waltl, M. (2023). Oxide and Interface Defect Analysis of Lateral 4h-SiC MOSFETs Through CV Characterization and TCAD Simulations. Materials Science Forum, 1090, 119–126. https://doi.org/10.4028/p-k93y93 (reposiTUm)

837.		Waltl, M., Schleich, C., Vasilev, A., Waldhör, D., Stampfer, B., Grasser, T. (2023). Physical Modelling of Charge Trapping Effects in SiC MOSFETs. Materials Science Forum, 1090, 185–191. https://doi.org/10.4028/p-o083cb (reposiTUm)

836.		Tselios, K., Knobloch, T., Waldhör, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M. (2023). Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors. IEEE Transactions on Device and Materials Reliability, 23(3), 355–362. https://doi.org/10.1109/TDMR.2023.3262141 (reposiTUm)

835.		Stephanie, M. V., Honz, F., Vokic, N., Boxleitner, W., Waltl, M., Grasser, T., Schrenk, B. (2023). SOA-REAM Assisted Synaptic Receptor for Weighted-Sum Detection of Multiple Inputs. Journal of Lightwave Technology, 41(4), 1258–1264. https://doi.org/10.1109/JLT.2022.3212111 (reposiTUm)

834.		Ceric, H., Lacerda de Orio, R., Selberherr, S. (2023). Statistical Study of Electromigration in Gold Interconnects. Microelectronics Reliability, 147, 1–7. https://doi.org/10.1016/j.microrel.2023.115061 (reposiTUm)

833.		Dehdast, M., Neek-Amal, M., Stampfl, C., Pourfath, M. (2023). Strain Engineering of Hyperbolic Plasmons in Monolayer Carbon Phosphide: A First-Principles Study. Nanoscale, 15(5), 2234–2247. https://doi.org/10.1039/d2nr06439a (reposiTUm)

832.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

831.		Faber, T., Filipovic, L., Koster, L. J. A. (2023). The Role of Thermalization in the Cooling Dynamics of Hot Carrier Solar Cells. Solar RRL, 7(13), 1–9. https://doi.org/10.1002/solr.202300140 (reposiTUm)

830.		Shayanfar, R., Alidoosti, M., Nasr Esfahani, D., Pourfath, M. (2023). The Carrier Mobility and Superconducting Properties of Monolayer Oxygen-Terminated Functionalized MXene Ti₂CO₂. Nanoscale, 15(46), 18806–18817. https://doi.org/10.1039/d3nr03981a (reposiTUm)

829.		Leroch, S., Grützmacher, P., Heckes, H., Eder, S. (2023). Towards a Multi-Abrasive Grinding Model for the Material Point Method. Frontiers in Manufacturing Technology, 3, Article 1114414. https://doi.org/10.3389/fmtec.2023.1114414 (reposiTUm)

828.		Shobeyrian, F., Shojaei, F., Soleimani, M., Pourfath, M. (2023). Two-Dimensional Cr₂X₂Y₆ (X = Si, Ge; Y = S, Se, Te) Family With Potential Application in Photocatalysis. Applied Surface Science, 630, 157319. https://doi.org/10.1016/j.apsusc.2023.157319 (reposiTUm)

827.		Ferry, D.K., Weinbub, J., Nedjalkov, M., Selberherr, S.: A Review of Quantum Transport in Field-Effect Transistors Semiconductor Science and Technology (eingeladen), 37 (2022), 4; S. 043001-1 - 043001-32. https://doi.org/10.1088/1361-6641/ac4405

826.		Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A.-M., Cvitkovich, L., Waltl, M., Grasser, T.: Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture Microelectronics Reliability, 139 (2022), 114801. https://doi.org/10.1016/j.microrel.2022.114801

825.		Selberherr, S., Sverdlov, V.: About electron transport and spin control in semiconductor devices Solid-State Electronics (eingeladen), 197 (2022), 108443. https://doi.org/10.1016/j.sse.2022.108443

824.		Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V.: Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches Proceedings of SPIE (eingeladen), 12157 (2022), S. 1215708-1 - 1215708-14. https://doi.org/10.1117/12.2624595

823.		Ducry, F., Waldhör, D., Knobloch, T., Csontos, M., Olalla, J., Leuthold, J., Grasser, T., Luisier, M.: An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride npj 2D Materials and Applications, 6 (2022), 58. https://doi.org/10.1038/s41699-022-00340-6

822.		Filipovic, L., Selberherr, S.: Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors Nanomaterials (eingeladen), 12 (2022), 1651.

821.		Filipovic, L., Selberherr, S. (2022). Application of Two-Dimensional Materials Towards CMOS-integrated Gas Sensors. Nanomaterials, 12(20), Article 3651. https://doi.org/10.3390/nano12203651 (reposiTUm)

820.		Lenz, C., Manstetten, P., Aguinsky, L.F., Rodrigues, F., Hössinger, A., Weinbub, J.: "Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations"; Solid-State Electronics (eingeladen), 200 (2022), 10258. https://doi.org/10.1016/j.sse.2022.108534

819.		Knobloch, T., Selberherr, S., Grasser, T.: Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials Nanomaterials (eingeladen), 12 (2022), 3548. https://doi.org/10.3390/nano12203548

818.		Weinbub, J., Kosik, R.: Computational Perspective on Recent Advances in Quantum Electronics: From Electron Quantum Optics to Nanoelectronic Devices and Systems Journal of Physics: Condensed Matter (eingeladen), 34 (2022), 16; S. 163001-1 - 163001-32. https://doi.org/10.1088/1361-648X/ac49c6

817.		Lenz, C., Toifl, A., Quell, M., Rodrigues, F., Hössinger, A., Weinbub, J.: Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations Solid-State Electronics (eingeladen), 191 (2022), S. 108258-1 - 108258-8. https://doi.org/10.1016/j.sse.2022.108258

816.		Loch, W.J., Fiorentini, S., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V.: Double Reference Layer STT-MRAM Structures with Improved Performance Solid-State Electronics, 194 (2022), S. 108335-1 - 108335-4. https://doi.org/10.1016/j.sse.2022.108335

815.		Sverdlov, V., Seiler, H., El-Sayed, A.-M., Illarionov, Yu., Kosina, H.: Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase Solid-State Electronics (eingeladen), 193 (2022), S. 108266-1 - 108266-8. https://doi.org/10.1016/j.sse.2022.108266

814.		Nazzari, D., Genser, J. A., Ritter, V., Bethge, O., Bertagnolli, E., Grasser, T., Weber, W. M., Lugstein, A. (2022). Epitaxial Growth of Crystalline CaF₂ on Silicene. ACS Applied Materials and Interfaces, 14(28), 32675–32682. https://doi.org/10.1021/acsami.2c06293 (reposiTUm)

813.		Tselios, K., Michl, J. D., Knobloch, T., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T., Waltl, M. (2022). Evaluation of the Impact of Defects on Threshold Voltage Drift Employing SiO₂ pMOS Transistors. Microelectronics Reliability, 138, 1–6. https://doi.org/10.1016/j.microrel.2022.114701 (reposiTUm)

812.		Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., Sverdlov, V. (2022). Finite Element Method for MRAM Switching Simulations. WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 (reposiTUm)

811.		Jorstad, N., Fiorentini, S., Loch, W.J., Goes, W., Selberherr, S., Sverdlov, V.: Finite Element Modeling of Spin-Orbit Torques Solid-State Electronics, 194 (2022), S. 108323-1 - 108323-4. https://doi.org/10.1016/j.sse.2022.108323

810.		Weinbub, J., Ballicchia, M., Nedjalkov, M.: Gate-Controlled Electron Quantum Interference Logic Nanoscale, 14 (2022), 37; S. 13520 - 13525. https://doi.org/10.1039/D2NR04423D

809.		Nedjalkov, M., Ballicchia, M., Kosik, R., Weinbub, J.: "Gauge-Invariant Semidiscrete Wigner Theory"; Physical Review A, 106 (2022), 052213. https://doi.org/10.1103/PhysRevA.106.052213

808.		Reiter, T., Klemenschits, X., Filipovic, L.: Impact of Plasma Induced Damage on the Fabrication of 3D NAND Flash Memory Solid-State Electronics (eingeladen), 192 (2022), S. 108261-1 - 108261-9. https://doi.org/10.1016/j.sse.2022.108261

807.		Knobloch, T., Burkay, U., Illarionov, Yu., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M., Grasser, T.: Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning Nature Electronics, 5 (2022), S. 356 - 366. https://doi.org/10.1038/s41928-022-00768-0

806.		Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., Grasser, T. (2022). Improving Stability in Two-Dimensional Transistors With Amorphous Gate Oxides by Fermi-Level Tuning. Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 (reposiTUm)

805.		Illarionov, Y., Knobloch, T., Grasser, T.: Inorganic Molecular Crystals for 2D Electronics Nature Electronics, 4 (2022), 12; S. 870 - 871. https://doi.org/10.1038/s41928-021-00691-w

804.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: Interface Effects in Ultra-Scaled MRAM Cells Solid-State Electronics, 194 (2022), S. 108373-1 - 108373-4. https://doi.org/10.1016/j.sse.2022.108373

803.		Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K., Stampfer, B., Reisinger, H., Grasser, T.: Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models Materials Science Forum, 1062 (2022), S. 688 - 695. https://doi.org/10.4028/p-pijkeu

802.		Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T.: Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Advanced Materials (eingeladen), n/a (2022), S. 2201082-1 - 2201082-23. https://doi.org/10.1002/adma.202201082

801.		Aguinsky, L.F., Rodrigues, F., Wachter, G., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J.: Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon Solid-State Electronics (eingeladen), 191 (2022), S. 108262-1 - 108262-8. https://doi.org/10.1016/j.sse.2022.108262

800.		Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: Reinforcement learning to reduce failures in SOT-MRAM switching Microelectronics Reliability (eingeladen), 135 (2022), 114570; S. 1 - 5. https://doi.org/10.1016/j.microrel.2022.114570

799.		Schleich, C., Waldhör, D., Knobloch, T., Zhou, W., Stampfer, B., Michl, J. D., Waltl, M., Grasser, T. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory. IEEE Transactions on Electron Devices, 69(8), 4479–4485. https://doi.org/10.1109/TED.2022.3185966 (reposiTUm)

798.		Schleich, C., Waldhör, D., El-Sayed, A.-M. B., Tselios, K., Kaczer, B., Grasser, T., Waltl, M. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons. IEEE Transactions on Electron Devices, 69(8), 4486–4493. https://doi.org/10.1109/TED.2022.3185965 (reposiTUm)

797.		Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 (reposiTUm)

796.		Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells. Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm)

795.		Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells. Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm)

794.		Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Tyaginov, S., Makarov, A., Pobegen, G., Grasser, T., Waltl, M. (2022). TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4h-SiC MOSFETs. IEEE Transactions on Electron Devices, 69(6), 3290–3295. https://doi.org/10.1109/TED.2022.3166123 (reposiTUm)

793.		Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V.: Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach Solid-State Electronics (eingeladen), 193 (2022), S. 108269-1 - 108269-7. https://doi.org/10.1016/j.sse.2022.108269

792.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

791.		Benam, M., Ballicchia, M., Weinbub, J., Selberherr, S., Nedjalkov, M.: A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling Journal of Computational Electronics, 20 (2021), 2; S. 775 - 784. https://doi.org/10.1007/s10825-020-01643-x

790.		Cervenka, J., Kosik, R., Nedjalkov, M.: A Deterministic Wigner Approach for Superposed States Journal of Computational Electronics, 20 (2021), 6; S. 2104 - 2110. https://doi.org/10.1007/s10825-021-01801-9

789.		Abdolhosseini, S., Boroun, M., Pourfath, M. (2021). Ab Initio Analysis of Periodic Self-Assembly Phases of Borophene as Anode Material for Na-Ion Batteries. JOURNAL OF PHYSICAL CHEMISTRY C, 125(10), 5436–5446. https://doi.org/10.1021/acs.jpcc.0c09993 (reposiTUm)

788.		Auzinger, W., Hofstätter, H., Koch, O., Quell, M.: Adaptive Time Propagation for Time-Dependent Schrödinger Equations International Journal of Applied and Computational Mathematics, 7 (2021), 1; S. 6-1 - 6-14. https://doi.org/10.1007/s40819-020-00937-9

787.		Ruch, B., Jech, M., Pobegen, G., Grasser, T.: Applicability of Shockley-Read-Hall Theory for Interface States IEEE Transactions on Electron Devices, 68 (2021), 4; S. 2092 - 2097. https://doi.org/10.1109/TED.2021.3049760

786.		Ansaripour, I., Pourfath, M. (2021). Charge-Induced Two-Step Structural Phase Transition in the MoTe₂–WSeTe Hetero-Bilayer. JOURNAL OF PHYSICAL CHEMISTRY C, 125(27), 15000–15011. https://doi.org/10.1021/acs.jpcc.1c03138 (reposiTUm)

785.		Toifl, A., Rodrigues, F., Aguinsky, L.F., Hössinger, A., Weinbub, J.: Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates Semiconductor Science and Technology, 36 (2021), 4; S. 045016-1 - 045016-12. https://doi.org/10.1088/1361-6641/abe49b

784.		Fiorentini, S., Ender, J., Selberherr, S., Orio, R., Goes, W., Sverdlov, V.: Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions Solid-State Electronics (eingeladen), 186 (2021), S. 108103. https://doi.org/10.1016/j.sse.2021.108103

783.		Illarionov, Yu., Knobloch, T., Grasser, T.: Crystalline Insulators for Scalable 2D Nanoelectronics Solid-State Electronics, 185 (2021), S. 108043-1 - 108043-3. https://doi.org/10.1016/j.sse.2021.108043

782.		Michl, J., Grill, A., Waldhör, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T.: Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory IEEE Transactions on Electron Devices, 68 (2021), 12; S. 6365 - 6371. https://doi.org/10.1109/TED.2021.3116931

781.		Michl, J., Grill, A., Waldhör, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M.: Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental IEEE Transactions on Electron Devices, 68 (2021), 12; S. 6372 - 6378. https://doi.org/10.1109/TED.2021.3117740

780.		Ender, J., Fiorentini, S., Orio, R., Goes, W., Sverdlov, V., Selberherr, S.: Emerging CMOS Compatible Magnetic Memories and Logic IEEE Journal of the Electron Devices Society (eingeladen), 9 (2021), S. 456 - 463. https://doi.org/10.1109/JEDS.2021.3066679

779.		Gupta, N., Shah, A., Khan, S., Vishvakarma, S., Waltl, M., Girard, P.: Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications Electronics, 10 (2021), 14; S. 1718-1 - 1718-16. https://doi.org/10.3390/electronics10141718

778.		Klemenschits, X., Selberherr, S., Filipovic, L.: Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures Computer Methods in Applied Mechanics and Engineering, 386 (2021), S. 114196-1 - 114196-22. https://doi.org/10.1016/j.cma.2021.114196

777.		Shah, A., Gupta, N., Waltl, M.: High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs Analog Integrated Circuits and Signal Processing, 109 (2021), S. 657 - 671. https://doi.org/10.1007/s10470-021-01924-w

776.		Hernandez, Y., Stampfer, B., Grasser, T., Waltl, M.: Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies Crystals, 11 (2021), 9; S. 1150-1 - 1150-9. https://doi.org/10.3390/cryst11091150

775.		Shah, A., Waltl, M.: Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34 (2021), 3; S. e2854-1 - e2854-13. https://doi.org/10.1002/jnm.2854

774.		Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E., Minixhofer, R., Grasser, T.: Impact of Single-Defects on the Variability of CMOS Inverter Circuits Microelectronics Reliability, 126 (2021), S. 114275-1 - 114275-6. https://doi.org/10.1016/j.microrel.2021.114275

773.		Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

772.		Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Microelectronics Reliability, 126 (2021), S. 114231-1 - 114231-5. https://doi.org/10.1016/j.microrel.2021.114231

771.		Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. Microelectronics Reliability, 126, 1–5. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

770.		Ruch, B., Pobegen, G., Grasser, T.: Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs IEEE Transactions on Electron Devices, 68 (2021), 4; S. 1804 - 1809. https://doi.org/10.1109/TED.2021.3060697

769.		Filipovic, L., Selberherr, S.: Microstructure and Granularity Effects in Electromigration IEEE Journal of the Electron Devices Society (eingeladen), 9 (2021), S. 476 - 483. https://doi.org/10.1109/JEDS.2020.3044112

768.		Aguinsky, L.F., Wachter, G., Manstetten, P., Rodrigues, F., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J.: Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators Journal of Micromechanics and Microengineering, 31 (2021), 12; S. 125003-1 - 125003-9. https://doi.org/10.1088/1361-6439/ac2bad

767.		Orio, R., Ender, J., Fiorentini, S., Gös, W., Selberherr, S., Sverdlov, V.: Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell IEEE Journal of the Electron Devices Society, 9 (2021), S. 61 - 67. https://doi.org/10.1109/JEDS.2020.3039544

766.		Kosik, R., Cervenka, J., Kosina, H.: Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner Equation Journal of Computational Electronics, 20 (2021), 6; S. 2052 - 2061. https://doi.org/10.1007/s10825-021-01800-w

765.		Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M.: On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors IEEE Transactions on Device and Materials Reliability (eingeladen), 91 (2021), 2; S. 199 - 206. https://doi.org/10.1109/TDMR.2021.3080983

764.		Feil, M., Puschkarsky, K., Gustin, W., Reisinger, H., Grasser, T.: On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices IEEE Transactions on Electron Devices, 68 (2021), 1; S. 236 - 243. https://doi.org/10.1109/TED.2020.3036321

763.		Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning Micromachines, 12 (2021), 4; S. 443. https://doi.org/10.3390/mi12040443

762.		Quell, M., Suvorov, V., Hössinger, A., Weinbub, J.: Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD IEEE Transactions on Electron Devices, 68 (2021), 11; S. 5430 - 5437. https://doi.org/10.1109/TED.2021.3087451

761.		Schleich, C., Waldhör, D., Waschneck, K., Feil, M., Reisinger, H., Grasser, T., Waltl, M.: Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies IEEE Transactions on Electron Devices, 68 (2021), 8; S. 4016 - 4021. https://doi.org/10.1109/TED.2021.3092295

760.		Jech, M., El-Sayed, A.-M., Tyaginov, S. E., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., Grasser, T.: Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices Physical Review Applied, 16 (2021), 1; S. 014026 -1 - 014026 -24. https://doi.org/10.1103/PhysRevApplied.16.014026

759.		Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V.: Reinforcement Learning Approach for Deterministic SOT-MRAM Switching Proceedings of SPIE (eingeladen), 11805 (2021), S. 1180519-1 - 1180519-8. https://doi.org/10.1117/12.2593937

758.		Ceric, H., Selberherr, S., Zahedmanesh, H., Orio, R., Croes, K.: Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects ECS Journal of Solid State Science and Technology, 10 (2021), 3; S. 035003-1 - 035003-11. https://doi.org/10.1149/2162-8777/abe7a9

757.		Quell, M., Diamantopoulos, G., Hössinger, A., Weinbub, J.: Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes Journal of Computational and Applied Mathematics, 392 (2021), S. 113488-1 - 113488-15. https://doi.org/10.1016/j.cam.2021.113488

756.		Sverdlov, V., El-Sayed, A.-M., Seiler, H., Kosina, H., Selberherr, S.: Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase Solid-State Electronics (eingeladen), 184 (2021), 10; S. 108081-1 - 108081-9. https://doi.org/10.1016/j.sse.2021.108081

755.		Fatemeh, S., Moradinasab, M., Schwalke, U., Filipovic, L.: Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications ACS Omega, 6 (2021), 29; S. 18770 - 18781. https://doi.org/10.1021/acsomega.1c01898

754.		Knobloch, T., Illarionov, Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Müller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T.: The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials Nature Electronics, 4 (2021), 2; S. 98 - 108. https://doi.org/10.1038/s41928-020-00529-x

753.		Filipovic, L.: Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters Microelectronics Reliability, 123 (2021), S. 114219-1 - 114219-14. https://doi.org/10.1016/j.microrel.2021.114219

752.		Filipovic, L. (2021). Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters. Microelectronics Reliability, 123, 1–14. https://doi.org/10.1016/j.microrel.2021.114219 (reposiTUm)

751.		Waldhör, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E., Enichlmair, H., Waltl, M., Grasser, T.: Toward Automated Defect Extraction From Bias Temperature Instability Measurements IEEE Transactions on Electron Devices, 68 (2021), 8; S. 4057 - 4063. https://doi.org/10.1109/TED.2021.3091966

750.		Mills, R., Adams, M., Balay, S., Brown, J., Dener, A., Knepley, M., Kruger, S., Morgan, H., Munson, T., Rupp, K., Smith, B., Zampini, S., Zhang, H., Zhang, J.: Toward Performance-Portable PETSc for GPU-based Exascale Systems Parallel Computing, 108 (2021), S. 102831-1 - 102831-16. https://doi.org/10.1016/j.parco.2021.102831

749.		Das, S., Sebastian, A., Pop, E., McClellan, C., Franklin, A., Grasser, T., Knobloch, T., Illarionov, Yu., Penumatcha, A., Appenzeller, J., Chen, Z., Zhu, W., Li, L., Avci, U., Bhat, N., Anthopoulos, T., Singh, R.: Transistors Based on Two-Dimensional Materials for Future Integrated Circuits Nature Electronics, 4 (2021), 11; S. 786 - 799. https://doi.org/10.1038/s41928-021-00670-1

748.		Dehdast, M., Valiollahi, Z., Neek-Amal, M., Van Duppen, B., Peeters, F. M., Pourfath, M. (2021). Tunable Natural Terahertz and Mid-Infrared Hyperbolic Plasmons in Carbon Phosphide. Carbon, 178, 625–631. https://doi.org/10.1016/j.carbon.2021.03.040 (reposiTUm)

747.		Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.: Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations Solid-State Electronics (eingeladen), 185 (2021), S. 108075. https://doi.org/10.1016/j.sse.2021.108075

746.		HosseinpourRokni, M., Naderi, R., Soleimani, M., Jannat, A. R., Pourfath, M., Saybani, M. (2021). Using Plant Extracts to Modify Al Electrochemical Behavior Under Corroding and Functioning Conditions in the Air Battery With Alkaline-Ethylene Glycol Electrolyte. Journal of Industrial and Engineering Chemistry, 102, 327–342. https://doi.org/10.1016/j.jiec.2021.07.017 (reposiTUm)

745.		Saleh, A., Ceric, H., Zahedmanesh, H.: Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model Journal of Applied Physics, 129 (2021), 12; S. 125102-1 - 125102-17. https://doi.org/10.1063/5.0039953

744.		Raut, G., Shah, A., Sharma, V., Rajput, G., Vishvakarma, S.: A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture Circuits Systems and Signal Processing, 39 (2020), S. 4681 - 4694. https://doi.org/10.1007/s00034-020-01371-4

743.		Khan, S., Shah, A., Chouhan, S., Gupta, N., Pandey, J., Vishvakarma, S.: A Symmetric D Flip-Flop Based PUF with Improved Uniqueness Microelectronics Reliability, 106 (2020), S. 113595. https://doi.org/10.1016/j.microrel.2020.113595

742.		Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.: Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM IEEE Journal of the Electron Devices Society (eingeladen), 8 (2020), S. 1249 - 1256. https://doi.org/10.1109/JEDS.2020.3023577

741.		Sverdlov, V., El-Sayed, A.-M., Kosina, H., Selberherr, S.: Ballistic Conductance in a Topological 1T '-MoS₂ Nanoribbon Semiconductors (Physics of Semiconductor Devices) (eingeladen), 54 (2020), 12; S. 1713 - 1715. https://doi.org/10.1134/S1063782620120386

740.		Shah, A., Waltl, M.: Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM Electronics, 9 (2020), 2; S. 256-1 - 256-12. https://doi.org/10.3390/electronics9020256

739.		Ferry, D.K., Nedjalkov, M., Weinbub, J., Ballicchia, M., Welland, I., Selberherr, S.: Complex Systems in Phase Space Entropy (eingeladen), 22 (2020), 10; S. 1103-1 - 1103-19. https://doi.org/10.3390/e22101103

738.		Fiorentini, S., Ender, J., Mohamedou, M., Selberherr, S., Orio, R., Goes, W., Sverdlov, V.: Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells Proceedings of SPIE (eingeladen), 11470 (2020), S. 50 - 56. https://doi.org/10.1117/12.2567480

737.		Sverdlov, V., El-Sayed, A.-M., Kosina, H., Selberherr, S.: Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T´ Phase IEEE Transactions on Electron Devices, 67 (2020), 11; S. 4687 - 4690. https://doi.org/10.1109/TED.2020.3023921

736.		Makarov, A., Roussel, Ph., Bury, E., Vandemaele, M., Spessot, A., Linten, D., Kaczer, B., Tyaginov, S. E.: Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach Micromachines, 11 (2020), 7; S. 675. https://doi.org/10.3390/mi11070657

735.		Wen, C., Banshchikov, A., Illarionov, Yu., Frammelsberger, W., Knobloch, T., Hui, F., Sokolov, N. S., Grasser, T., Lanza, M.: Dielectric Properties of Ultrathin CaF₂ Ionic Crystals Advanced Materials, 32 (2020), 34; S. 2002525-1 - 2002525-6. https://doi.org/10.1002/adma.202002525

734.		Ghamari, S., Dehdast, M., Habibiyan, H., Pourfath, M., Ghafoorifard, H. (2020). Dielectrophoretic Borophene Tweezer: Sub-10 mV Nano-Particle Trapping. Applied Surface Science, 527, 146859. https://doi.org/10.1016/j.apsusc.2020.146859 (reposiTUm)

733.		Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M.: Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays IEEE Transactions on Device and Materials Reliability (eingeladen), 20 (2020), 2; S. 251 - 257. https://doi.org/10.1109/TDMR.2020.2985109

732.		Soleimani, M., Pourfath, M. (2020). Ferroelectricity and Phase Transitions in In₂Se₃ Van Der Waals Material. Nanoscale, 12(44), 22688–22697. https://doi.org/10.1039/d0nr04096g (reposiTUm)

731.		Illarionov, Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Müller, T., Lemme, M., Fiori, G., Schwierz, F., Grasser, T.: Insulators for 2D Nanoelectronics: The Gap to Bridge Nature Communications, 11 (2020), S. 3385. https://doi.org/10.1038/s41467-020-16640-8

730.		Ruch, B., Pobegen, G., Grasser, T.: Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping IEEE Transactions on Electron Devices, 67 (2020), 10; S. 4092 - 4098. https://doi.org/10.1109/TED.2020.3018091

729.		Jech, M., Rott, G.A., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T.: Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V_G, V_D} Bias Space: Implications and Peculiarities IEEE Transactions on Electron Devices, 67 (2020), 8; S. 3315 - 3322. https://doi.org/10.1109/TED.2020.3000749

728.		Illarionov, Yu., Knobloch, T., Grasser, T.: Native High-k Oxides for 2D Transistors Nature Electronics, 3 (2020), S. 442 - 443. https://doi.org/10.1038/s41928-020-0464-2

727.		Hartwig, A., Boman, E., Falgout, R., Ghysels, P., Heroux, M., Li, X., McInnes, L., Mills, R., Rajamanickam, S., Rupp, K., Smith, B., Yamazaki, I., Meier Yang, U.: Preparing Sparse Solvers for Exascale Computing Philosophical Transactions of The Royal Society A (eingeladen), 378 (2020), S. 20190053-1 - 20190053-14. https://doi.org/10.1098/rsta.2019.0053

726.		Waltl, M.: Reliability of Miniaturized Transistors from the Perspective of Single-Defects Micromachines (eingeladen), 11 (2020), 8; S. 736-1 - 736-21. https://doi.org/10.3390/mi11080736

725.		Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM Solid-State Electronics, 168 (2020), S. 107730-1 - 107730-7. https://doi.org/10.1016/j.sse.2019.107730

724.		Stampfer, B., Schanovski, F., Grasser, T., Waltl, M.: Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors Micromachines (eingeladen), 11 (2020), 4; S. 446-1 - 446-11. https://doi.org/10.3390/mi11040446

723.		Honari, N., Tabatabaei, S. M., Pourfath, M., Fathipour, M. (2020). Semiconducting Phase and Anisotropic Properties in Borophene via Chemical Surface Functionalization. JOURNAL OF PHYSICAL CHEMISTRY C, 124(10), 5807–5816. https://doi.org/10.1021/acs.jpcc.9b06614 (reposiTUm)

722.		Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., Grasser, T.: Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors Microelectronics Reliability, 114 (2020), S. 113746-1 - 113746-5. https://doi.org/10.1016/j.microrel.2020.113746

721.		Shah, A., Rossi, D., Sharma, V., Vishvakarma, S., Waltl, M.: Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit Microelectronics Reliability, 107 (2020), S. 113617. https://doi.org/10.1016/j.microrel.2020.113617

720.		Feil, M., Huerner, A., Puschkarsky, K., Schleich, C., Eichinger, T., Gustin, W., Reisinger, H., Grasser, T.: The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters Crystals (eingeladen), 10 (2020), 12; S. 1143-1 - 1143-14. https://doi.org/10.3390/cryst10121143

719.		Toifl, A., Quell, M., Klemenschits, X., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy IEEE Access, 8 (2020), S. 115406 - 115422. https://doi.org/10.1109/ACCESS.2020.3004136

718.		Berens, J., Pobegen, G., Grasser, T.: Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs Materials Science Forum, 1004 (2020), S. 652 - 658. https://doi.org/10.4028/www.scientific.net/MSF.1004.652

717.		Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.: Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer Physica B: Condensed Matter, 578 (2020), S. 411743. https://doi.org/10.1016/j.physb.2019.411743

716.		Waltl, M.: Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors IEEE Transactions on Device and Materials Reliability (eingeladen), 20 (2020), 2; S. 242 - 250. https://doi.org/10.1109/TDMR.2020.2988650

715.		Filipovic, L.: A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration Microelectronics Reliability, 97 (2019), S. 38 - 52. https://doi.org/10.1016/j.microrel.2019.04.005

714.		Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J.: A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing Advances in Computational Mathematics, 45 (2019), 4; S. 2029 - 2045. https://doi.org/10.1007/s10444-019-09683-z

713.		Jech, M., El-Sayed, A.-M., Tyaginov, S. E., Shluger, A., Grasser, T.: Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO₂ Interfaces Physical Review B, 100 (2019), S. 195302. https://doi.org/10.1103/PhysRevB.100.195302

712.		Safari, F., Moradinasab, M., Fathipour, M., Kosina, H.: Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study Applied Surface Science, 464 (2019), S. 153 - 161. https://doi.org/10.1016/j.apsusc.2018.09.048

711.		Puschkarsky, K., Reisinger, H., Rott, G.A., Schluender, C., Gustin, W., Grasser, T.: An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps IEEE Transactions on Electron Devices, 66 (2019), 11; S. 4623 - 4630. https://doi.org/10.1109/TED.2019.2941889

710.		Sanvale, P., Gupta, N., Neema, V., Shah, A., Vishvakarma, S.: An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ Microelectronics Journal, 92 (2019), S. 104611. https://doi.org/10.1016/j.mejo.2019.104611

709.		Khan, S., Shah, A., Gupta, N., Chouhan, S., Pandey, J., Vishvakarma, S.: An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications Microelectronics Journal, 92 (2019), S. 104605. https://doi.org/10.1016/j.mejo.2019.104605

708.		Ceric, H., Zahedmanesh, H., Croes, K.: Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods Microelectronics Reliability, 100-101 (2019), S. 113362. https://doi.org/10.1016/j.microrel.2019.06.054

707.		Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. E.: Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach IEEE Electron Device Letters, 40 (2019), 10; S. 1579 - 1582. https://doi.org/10.1109/LED.2019.2933729

706.		Bernhard, R., Pobegen, G., Rösch, M., Vytla, R., Grasser, T.: Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs IEEE Transactions on Device and Materials Reliability, 19 (2019), 1; S. 133 - 139. https://doi.org/10.1109/TDMR.2019.2891794

705.		Berens, J., Pobegen, G., Eichinger, T., Rescher, G., Grasser, T.: Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs Materials Science Forum, 963 (2019), S. 175 - 179. https://doi.org/10.4028/www.scientific.net/MSF.963.175

704.		Sverdlov, V., Selberherr, S.: Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts Solid-State Electronics, 159 (2019), S. 43 - 50. https://doi.org/10.1016/j.sse.2019.03.053

703.		Ghosh, J., Osintsev, D., Sverdlov, V.: Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm Journal of Computational Electronics, 18 (2019), 1; S. 28 - 36. https://doi.org/10.1007/s10825-018-1274-x

702.		Grill, A., Stampfer, B., Im, K.-S., Lee, J., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T.: Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs Solid-State Electronics, 19 (2019), 156; S. 41 - 47. https://doi.org/10.1016/j.sse.2019.02.004

701.		Jing, X., Illarionov, Yu., Yalon, E., Zhou, P., Grasser, T., Shi, Y., Lanza, M.: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects Advanced Functional Materials, 30 (2019), 18; S. 1901971. https://doi.org/10.1002/adfm.201901971

700.		Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., Grasser, T.: Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques IEEE Transactions on Device and Materials Reliability, 19 (2019), 2; S. 358 - 362. https://doi.org/10.1109/TDMR.2019.2909993

699.		Oliva, N., Illarionov, Yu., Casu, E., Cavalieri, M., Knobloch, T., Grasser, T., Ionescu, A.: Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric IEEE Journal of the Electron Devices Society, 7 (2019), S. 1163 - 1169. https://doi.org/10.1109/JEDS.2019.2933745

698.		Ullmann, B., Jech, M., Puschkarsky, K., Rott, G.A., Waltl, M., Illarionov, Yu., Reisinger, H., Grasser, T.: Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental IEEE Transactions on Electron Devices, 66 (2019), 1; S. 232 - 240. https://doi.org/10.1109/TED.2018.2873419

697.		Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S. E., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T.: Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory IEEE Transactions on Electron Devices, 66 (2019), 1; S. 241 - 248. https://doi.org/10.1109/TED.2018.2873421

696.		Wu, Z., Franco, J., Vandooren, A., Kaczer, B., Roussel, Ph., Rzepa, G., Grasser, T.: Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration IEEE Transactions on Device and Materials Reliability, 9 (2019), 2; S. 262 - 267. https://doi.org/10.1109/TDMR.2019.2906843

695.		Lahlalia, A., Le Neel, O., Shankar, R., Selberherr, S., Filipovic, L.: Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices Sensors, 19 (2019), 2; S. 374-1 - 374-14. https://doi.org/10.3390/s19020374

694.		Ballicchia, M., Ferry, D.K., Nedjalkov, M., Weinbub, J.: Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution Applied Sciences (eingeladen), 9 (2019), 7; S. 1344-1 - 1344-10. https://doi.org/10.3390/app9071344

693.		Orio, R., Selberherr, S., Sverdlov, V.: Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques Proceedings of SPIE (eingeladen), 11090 (2019), S. 110903F-1 - 110903F-6. https://doi.org/10.1117/12.2529119

692.		Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carillo-Nunez, H., Lee, J., Badami, O., Georgiev, V., Selberherr, S., Asenov, A.: Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism IEEE Electron Device Letters, 40 (2019), 10; S. 1571 - 1574. https://doi.org/10.1109/LED.2019.2934349

691.		Giering, K., Puschkarsky, K., Reisinger, H., Rzepa, G., Rott, G.A., Vollertsen, R., Grasser, T., Jancke, R.: NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling IEEE Transactions on Electron Devices, 66 (2019), 4; S. 1662 - 1668. https://doi.org/10.1109/TED.2019.2901907

690.		Berens, J., Pobegen, G., Rescher, G., Aichinger, T., Grasser, T.: NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability IEEE Transactions on Electron Devices, 66 (2019), 11; S. 4692 - 4697. https://doi.org/10.1109/TED.2019.2941723

689.		Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B.: On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI IEEE Transactions on Device and Materials Reliability, 19 (2019), 2; S. 268 - 274. https://doi.org/10.1109/TDMR.2019.2913258

688.		Foster, S., Thesberg, M., Neophytou, N.: Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites Materials Today: Proceedings, 8 (2019), S. 690 - 695. https://doi.org/10.1016/j.matpr.2019.02.069

687.		Illarionov, Yu., Banshchikov, A., K Polyushkin, D., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Müller, A., Grasser, T.: Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators 2D Materials, 6 (2019), 4; S. 045004. https://doi.org/10.1088/2053-1583/ab28f2

686.		Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H.: Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability IEEE Transactions on Electron Devices (eingeladen), 66 (2019), 11; S. 4604 - 4616. https://doi.org/10.1109/TED.2019.2938262

685.		Boroun, M., Abdolhosseini, S., Pourfath, M. (2019). Separated and Intermixed Phases of Borophene as Anode Material for Lithium-Ion Batteries. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(24), Article 245501. https://doi.org/10.1088/1361-6463/ab1244 (reposiTUm)

684.		Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., Weinbub, J.: Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics IEEE Transactions on Electron Devices, 66 (2019), 7; S. 3060 - 3065. https://doi.org/10.1109/TED.2019.2916929

683.		Sadi, T., Medina-Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A.: Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors Materials, 12 (2019), 1; S. 124-1 - 124-11. https://doi.org/10.3390/ma12010124

682.		Makarov, A., Kaczer, B., Roussel, Ph., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. E.: Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs IEEE Electron Device Letters, 40 (2019), 6; S. 870 - 873. https://doi.org/10.1109/LED.2019.2913625

681.		Woerle, J., Simonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., Grossner, U.: Surface Morphology of 4H-SiC After Thermal Oxidation Materials Science Forum, 963 (2019), S. 180 - 183. https://doi.org/10.4028/www.scientific.net/MSF.963.180

680.		Vargiamidis, V., Thesberg, M., Neophytou, N.: Theoretical Model for the Seebeck Coefficient in Superlattice Materials with Energy Relaxation Journal of Applied Physics, 126 (2019), 5; S. 055105. https://doi.org/10.1063/1.5108607

679.		Filipovic, L., Selberherr, S.: Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors Materials (eingeladen), 12 (2019), 15; S. 2410-1 - 2410-37. https://doi.org/10.3390/ma12152410

678.		Khakbaz, P., Moshayedi, M., Hajian, S., Soleimani, M., Narakathu, B. B., Bazuin, B., Pourfath, M., Atashbar, M. (2019). Titanium Carbide MXene as NH₃ Sensor: Realistic First-Principles Study. JOURNAL OF PHYSICAL CHEMISTRY C, 123(49), 29794–29803. https://doi.org/10.1021/acs.jpcc.9b09823 (reposiTUm)

677.		Kittler, M., Reiche, M., Schwartz, B., Uebensee, H., Kosina, H., Stanojevic, Z., Baumgartner, O., Ortlepp, T.: Transport of Charge Carriers along Dislocations in Si and Ge Physica Status Solidi A, 216 (2019), 17; S. 1900287. https://doi.org/10.1002/pssa.201900287

676.		Banshchikov, A., Illarionov, Yu., Vexler, M. I., Wachter, S., Sokolov, N. S.: Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer Semiconductors (Physics of Semiconductor Devices), 53 (2019), 6; S. 833 - 837. https://doi.org/10.1134/S1063782619060034

675.		Sverdlov, V., Makarov, A., Selberherr, S.: Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM Solid-State Electronics, 155 (2019), S. 49 - 56. https://doi.org/10.1016/j.sse.2019.03.010

674.		Illarionov, Yu., Banshchikov, A., K Polyushkin, D., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Müller, T., Grasser, T.: Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors Nature Electronics, 2 (2019), S. 230 - 235. https://doi.org/10.1038/s41928-019-0256-8

673.		Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D.K.: Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform Physical Review B, 99 (2019), 1; S. 014423-1 - 014423-16. https://doi.org/10.1103/PhysRevB.99.014423

672.		Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T.: A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability Microelectronics Reliability (eingeladen), 81 (2018), S. 186 - 194. https://doi.org/10.1016/j.microrel.2017.11.022

671.		Knobloch, T., Rzepa, G., Illarionov, Yu., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T.: A Physical Model for the Hysteresis in MoS2 Transistors IEEE Journal of the Electron Devices Society, 6 (2018), 1; S. 972 - 978. https://doi.org/10.1109/JEDS.2018.2829933

670.		Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J.: Accelerating Flux Calculations Using Sparse Sampling Micromachines (eingeladen), 9 (2018), 11; S. 1 - 17. https://doi.org/10.3390/mi9110550

669.		Pakdel, S., Pourfath, M., Palacios, J. J. (2018). An Implementation of Spin-Orbit Coupling for Band Structure Calculations With Gaussian Basis Sets: Two-Dimensional Topological Crystals of Sb and Bi. Beilstein Journal of Nanotechnology, 9(1), 1015–1023. https://doi.org/10.3762/bjnano.9.94 (reposiTUm)

668.		Makarov, A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.: Analysis of the Features of Hot-Carrier Degradation in FinFETs Semiconductors (Physics of Semiconductor Devices), 52 (2018), 10; S. 1177 - 1182. https://doi.org/10.1134/S1063782618100081

667.		Stampfer, B., Zhang, F., Illarionov, Yu., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T.: Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors ACS Nano, 12 (2018), 6; S. 5368 - 5375. https://doi.org/10.1021/acsnano.8b00268

666.		Rzepa, G., Franco, J., O´Sullivan, B.J., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P., Linten, D., Kaczer, B., Grasser, T.: Comphy -- A Compact-Physics Framework for Unified Modeling of BTI Microelectronics Reliability (eingeladen), 85 (2018), 1; S. 49 - 65. https://doi.org/10.1016/j.microrel.2018.04.002

665.		Rescher, G., Pobegen, G., Aichinger, T., Grasser, T.: Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning Materials Science Forum, 924 (2018), S. 671 - 675. https://doi.org/10.4028/www.scientific.net/MSF.924.671

664.		Stathis, J., Mahapatra, S., Grasser, T.: Controversial Issues in Negative Bias Temperature Instability Microelectronics Reliability, 81 (2018), S. 244 - 251. https://doi.org/10.1016/j.microrel.2017.12.035

663.		Sverdlov, V., Selberherr, S.: Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing Facta universitatis - series: Electronics and Energetics (eingeladen), 31 (2018), 4; S. 529 - 545. https://doi.org/10.2298/FUEE1804529S

662.		El-Sayed, A.-M., Watkins, M., Grasser, T., Shluger, A.: Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO Physical Review B, 98 (2018), 6; S. 064102. https://doi.org/10.1103/PhysRevB.98.064102

661.		Lahlalia, A., Le Neel, O., Shankar, R., Kam, S.-Y., Filipovic, L.: Electro-Thermal Simulation & Characterization of a Microheater for SMO Gas Sensors Journal Of Microelectromechanical Systems, 27 (2018), 3; S. 529 - 537. https://doi.org/10.1109/JMEMS.2018.2822942

660.		Ballicchia, M., Weinbub, J., Nedjalkov, M.: Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects Nanoscale, 10 (2018), 48; S. 23037 - 23049. https://doi.org/10.1039/C8NR06933F

659.		Weinbub, J., Ballicchia, M., Nedjalkov, M.: Electron Interference in a Double-Dopant Potential Structure Physica Status Solidi - Rapid Research Letters, 12 (2018), 7; S. 1800111-1 - 1800111-4. https://doi.org/10.1002/pssr.201800111

658.		Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide IEEE Transactions on Electron Devices, 65 (2018), 2; S. 674 - 679. https://doi.org/10.1109/TED.2017.2786086

657.		Gös, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A., Grasser, T.: Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence Microelectronics Reliability, 87 (2018), S. 286 - 320. https://doi.org/10.1016/j.microrel.2017.12.021

656.		Tyaginov, S. E., Makarov, A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.: Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs Semiconductors (Physics of Semiconductor Devices), 52 (2018), 13; S. 1738 - 1742. https://doi.org/10.1134/S1063782618130183

655.		Strand, J., Moloud, K., El-Sayed, A.-M., Afanas´Ev, V., Shluger, A.: Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges Journal of Physics: Condensed Matter, 30 (2018), 23; S. 233001. https://doi.org/10.1088/1361-648X/aac005

654.		Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide Materials Science Forum, 924 (2018), S. 192 - 195. https://doi.org/10.4028/www.scientific.net/MSF.924.192

653.		Lahlalia, A., Filipovic, L., Selberherr, S.: Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices IEEE Sensors Journal, 18 (2018), 5; S. 1960 - 1970. https://doi.org/10.1109/JSEN.2018.2790001

652.		Klemenschits, X., Selberherr, S., Filipovic, L.: Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review Micromachines (eingeladen), 9 (2018), 12; S. 631-1 - 631-31. https://doi.org/10.3390/mi9120631

651.		Illarionov, Yu., Banshchikov, A., Sokolov, N. S., Wachter, S., Vexler, M. I.: Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System) Technical Physics Letters, 44 (2018), 12; S. 1188 - 1191. https://doi.org/10.1134/S1063785018120441

650.		Tyaginov, S. E., Makarov, A., Jech, M., Vexler, M. I., Franco, J., Kaczer, B., Grasser, T.: Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures Semiconductors (Physics of Semiconductor Devices), 52 (2018), 2; S. 242 - 247. https://doi.org/10.1134/S1063782618020203

649.		Rescher, G., Pobegen, G., Aichinger, T., Grasser, T.: Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique IEEE Transactions on Electron Devices, 25 (2018), 4; S. 1419 - 1426. https://doi.org/10.1109/TED.2018.2803283

648.		Weinbub, J., Ferry, D.K.: Recent Advances in Wigner Function Approaches Applied Physics Reviews (eingeladen), 5 (2018), 4; S. 041104-1 - 041104-24. https://doi.org/10.1063/1.5046663

647.		Sverdlov, V., Makarov, A., Selberherr, S.: Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field Journal on Systemics, Cybernetics and Informatics (eingeladen), 16 (2018), 2; S. 55 - 59.

646.		Filipovic, L., Lahlalia, A.: Review-System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology Journal of the Electrochemical Society, 165 (2018), 16; S. 862 - 879. https://doi.org/10.1149/2.0731816jes

645.		Meller, G., Selberherr, S.: Simulation of Injection Currents into Disordered Molecular Conductors Materials Today: Proceedings, 5 (2018), 9; S. 17472 - 17477. https://doi.org/10.1016/j.matpr.2018.06.051

644.		Sverdlov, V., Selberherr, S.: Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor Proceedings of SPIE (eingeladen), 10732 (2018), S. 1073235-1 - 1073235-8. https://doi.org/10.1117/12.2319271

643.		Nedjalkov, M., Ellinghaus, P., Weinbub, J., Sadi, T., Asenov, A., Dimov, I., Selberherr, S.: Stochastic Analysis of Surface Roughness Models in Quantum Wires Computer Physics Communications, 228 (2018), S. 30 - 37. https://doi.org/10.1016/j.cpc.2018.03.010

642.		Kampl, M., Kosina, H.: The Backward Monte Carlo Method for Semiconductor Device Simulation Journal of Computational Electronics, 17 (2018), 4; S. 1492 - 1504. https://doi.org/10.1007/s10825-018-1225-6

641.		Simonka, V., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J.: Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide Journal of Applied Physics, 123 (2018), 23; S. 235701-1 - 235701-7. https://doi.org/10.1063/1.5031185

640.		Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., Grasser, T.: Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation IEEE Transactions on Device and Materials Reliability, 18 (2018), 2; S. 144 - 153. https://doi.org/10.1109/TDMR.2018.2813063

639.		Puschkarsky, K., Reisinger, H., Gustin, W., Grasser, T.: Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation IEEE Transactions on Electron Devices, 65 (2018), 11; S. 4764 - 4771. https://doi.org/10.1109/TED.2018.2870170

638.		Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S.: Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics Physica Status Solidi - Rapid Research Letters, 11 (2017), 7; S. 1700102-1 - 1700102-5. https://doi.org/10.1002/pssr.201770335

637.		Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S.: Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation Solid-State Electronics (eingeladen), 128 (2017), 2; S. 135 - 140. https://doi.org/10.1016/j.sse.2016.10.032

636.		Brinciotti, E., Badino, G., Knaipp, M., Gramse, G., Smoliner, J., Kienberger, F.: Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy IEEE Transactions on Nanotechnology, 16 (2017), 2; S. 245 - 252. https://doi.org/10.1109/TNANO.2017.2657888

635.		Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., Grasser, T.: Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs IEEE Transactions on Electron Devices, 64 (2017), 3; S. 1045 - 1052. https://doi.org/10.1109/TED.2017.2655367

634.		Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., Pogany, D.: Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs Applied Physics Letters, 110 (2017), 173502; S. 1 - 4. https://doi.org/10.1063/1.4982231

633.		Illarionov, Yu., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., K Polyushkin, D., Furchi, M. M., Müller, T., Grasser, T.: Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors 2D Materials, 4 (2017), 2; S. 025108-1 - 025108-10. https://doi.org/10.1088/2053-1583/aa734a

632.		Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S.: Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity Solid-State Electronics (eingeladen), 128 (2017), 2; S. 141 - 147. https://doi.org/10.1016/j.sse.2016.10.029

631.		Illarionov, Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J., Akinwande, D., Grasser, T.: Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps npj 2D Materials and Applications, 1 (2017), 1; S. 23-1 - 23-7. https://doi.org/10.1038/s41699-017-0025-3

630.		Sharma, P., Tyaginov, S. E., Rauch, S. E., Franco, J., Makarov, A., Vexler, M. I., Kaczer, B., Grasser, T.: Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach IEEE Electron Device Letters, 38 (2017), 2; S. 160 - 163. https://doi.org/10.1109/LED.2016.2645901

629.		Illarionov, Yu., Smithe, K., Waltl, M., Knobloch, T., Pop, E., Grasser, T.: Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation IEEE Electron Device Letters, 38 (2017), 12; S. 1763 - 1766. https://doi.org/10.1109/LED.2017.2768602

628.		Rescher, G., Pobegen, G., Aichinger, T., Grasser, T.: Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique Materials Science Forum, 897 (2017), S. 143 - 146. https://doi.org/10.4028/www.scientific.net/MSF.897.143

627.		Kaczer, B., Franco, J., Tyaginov, S. E., Jech, M., Rzepa, G., Grasser, T., O´Sullivan, B.J., Ritzenhaler, R., Schram, T., Spessot, A., Linten, D., Horiguchi, N.: Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices Journal of Vacuum Science & Technology B, 35 (2017), 1; S. 01A109-1 - 01A109-6. https://doi.org/10.1116/1.4972872

626.		Thesberg, M., Kosina, H., Neophytou, N.: On the Lorenz Number of Multiband Materials Physical Review B, 95 (2017), 12; S. 125206-1 - 125206-14. https://doi.org/10.1063/1.4972192

625.		Song, X., Hui, F., Knobloch, T., Wang, B., Fan, Z., Grasser, T., Jing, X., Shi, Y., Lanza, M.: Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide Applied Physics Letters, 111 (2017), 8; S. 083107-1 - 083107-4. https://doi.org/10.1063/1.5000496

624.		Vexler, M., Illarionov, Yu., Grekhov, I.: Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling Semiconductors (Physics of Semiconductor Devices), 51 (2017), 4; S. 444 - 448. https://doi.org/10.1134/S1063782617040224

623.		Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation Journal of Physical Chemistry A, 121 (2017), 46; S. 8791 - 8798. https://doi.org/10.1021/acs.jpca.7b08983

622.		Sverdlov, V., Weinbub, J., Selberherr, S.: Spintronics as a Non-Volatile Complement to Modern Microelectronics Informacije Midem - Journal of Microelectronics Electronic Components and Materials (eingeladen), 47 (2017), 4; S. 195 - 210.

621.		Waltl, M., Rzepa, G., Grill, A., Gös, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T.: Superior NBTI in High-k SiGe Transistors - Part I: Experimental IEEE Transactions on Electron Devices, 64 (2017), 5; S. 2092 - 2098. https://doi.org/10.1109/TED.2017.2686086

620.		Waltl, M., Rzepa, G., Grill, A., Gös, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T.: Superior NBTI in High-k SiGe Transistors - Part II: Theory IEEE Transactions on Electron Devices, 64 (2017), 5; S. 2099 - 2105. https://doi.org/10.1109/TED.2017.2686454

619.		Foster, S., Thesberg, M., Neophytou, N.: Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations Physical Review B, 96 (2017), 19; S. 195425-1 - 195425-12. https://doi.org/10.1103/PhysRevB.96.195425

618.		Ullmann, B., Grasser, T.: Transformation: Nanotechnology - Challenges in Transistor Design and Future Technologies E&I Elektrotechnik und Informationstechnik, 134 (2017), 7; S. 349 - 354. https://doi.org/10.1007/s00502-017-0534-y

617.		Manstetten, P., Weinbub, J., Hössinger, A., Selberherr, S.: Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces Procedia Computer Science, 108 (2017), S. 245 - 254. https://doi.org/10.1016/j.procs.2017.05.067

616.		Rupp, K., Jungemann, C., -M Hong, S., Bina, M., Grasser, T., Jüngel, A.: A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation Journal of Computational Electronics, 15 (2016), 3; S. 939 - 958. https://doi.org/10.1007/s10825-016-0828-z

615.		Azar, N.S., Pourfath, M.: Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents The Journal of Physical Chemistry C, 120 (2016), 30; S. 16804 - 16814. https://doi.org/10.1021/acs.jpcc.6b05318

614.		Illarionov, Yu., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T.: Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors Japanese Journal of Applied Physics, 55 (2016), 4S; S. 04EP03. https://doi.org/10.7567/JJAP.55.04EP03

613.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S.: CMOS-Compatible Spintronic Devices: A Review Semiconductor Science and Technology (eingeladen), 31 (2016), 11; S. 113006-1 - 113006-25. https://doi.org/10.1088/0268-1242/31/11/113006

612.		Stradiotto, R., Pobegen, G., Ostermaier, C., Grasser, T.: Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces Solid-State Electronics, 125 (2016), S. 142 - 153. https://doi.org/10.1016/j.sse.2016.07.017

611.		Weinbub, J., Hössinger, A.: Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method Procedia Computer Science, 80 (2016), S. 2271 - 2275. https://doi.org/10.1016/j.procs.2016.05.408

610.		Reiche, M., Kittler, M., Pippel, E., Kosina, H., Lugstein, A., Uebensee, H.: Electronic Properties of Dislocations Solid State Phenomena, 242 (2016), S. 141 - 146. https://doi.org/10.4028/www.scientific.net/SSP.242.141

609.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress Journal of Nano Research, 39 (2016), S. 34 - 42. https://doi.org/10.4028/www.scientific.net/JNanoR.39.34

608.		Jing, X., Panholzer, E., Song, X., Grustan-Gutierrez, E., Hui, F., Shi, Y., Benstetter, G., Illarionov, Yu., Grasser, T., Lanza, M.: Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets Nano Energy, 30 (2016), S. 494 - 502. https://doi.org/10.1016/j.nanoen.2016.10.032

607.		Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S.: Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide Journal of Applied Physics, 120 (2016), 13; S. 135705-1 - 135705-8. https://doi.org/10.1063/1.4964688

606.		Zeraati, M., Allaei, S.M.V., Sarsari, I.A., Pourfath, M., Donadio, D.: Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study Physical Review B, 93 (2016), 8; S. 085424-1 - 085424-6. https://doi.org/10.1103/PhysRevB.93.085424

605.		Reiche, M., Kittler, M., Pippel, E., Uebensee, H., Kosina, H., Grill, A., Stanojevic, Z., Baumgartner, O.: Impact of Defect-Induced Strain on Device Properties Advanced Engineering Materials, 18 (2016), 12; S. 1 - 4. https://doi.org/10.1002/adem.201600736

604.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment Proceedings of SPIE (eingeladen), 9931 (2016), S. 99312M-1 - 99312M-12. https://doi.org/10.1117/12.2236151

603.		Illarionov, Yu., Waltl, M., Rzepa, G., Kim, J., Kim, S., Dodabalapur, A., Akinwande, D., Grasser, T.: Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors ACS Nano, 10 (2016), 10; S. 9543 - 9549. https://doi.org/10.1021/acsnano.6b04814

602.		Neophytou, N., Thesberg, M.: Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor Journal of Computational Electronics (eingeladen), 15 (2016), 1; S. 16 - 26. https://doi.org/10.1007/s10825-016-0792-7

601.		Thesberg, M., Kosina, H., Neophytou, N.: On the Effectiveness of the Thermoelectric Energy Filtering Mechanism in Low-Dimensional Superlattices and Nano-Composites Journal of Applied Physics, 120 (2016), 23; S. 234302-1 - 234302-9. https://doi.org/10.1063/1.4972192

600.		Jech, M., Sharma, P., Tyaginov, S. E., Rudolf, F., Grasser, T.: On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling Japanese Journal of Applied Physics, 55 (2016), 4S; S. 1 - 6. https://doi.org/10.7567/JJAP.55.04ED14

599.		Rupp, K., Weinbub, J., Jüngel, A., Grasser, T.: Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units ACM Transactions on Mathematical Software, 43 (2016), 2; S. 11:1 - 11:27. https://doi.org/10.1145/2907944

598.		Vexler, M., Kareva, G.G., Illarionov, Yu., Grekhov, I.: Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures Technical Physics Letters, 42 (2016), 11; S. 1090 - 1093. https://doi.org/10.1134/S1063785016110109

597.		Wimmer, Y., El-Sayed, A.-M., Gös, W., Grasser, T., Shluger, A.: Role of Hydrogen in Volatile Behaviour of Defects in SiO₂-Based Electronic Devices Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences (eingeladen), 472 (2016), 2190; S. 1 - 23. https://doi.org/10.1098/rspa.2016.0009

596.		Chaghazardi, Z., Touski, S., Pourfath, M., Faez, R.: Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness Journal of Applied Physics, 120 (2016), 5; S. 053904-1 - 053904-5. https://doi.org/10.1063/1.4960354

595.		Filipovic, L., Selberherr, S.: Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology IEEE Transactions on Device and Materials Reliability, 16 (2016), 4; S. 483 - 495. https://doi.org/10.1109/TDMR.2016.2625461

594.		Papaleo, S., Zisser, W. H., Singulani, A.P., Ceric, H., Selberherr, S.: Stress Evolution During Nanoindentation in Open TSVs IEEE Transactions on Device and Materials Reliability, 16 (2016), 4; S. 470 - 474. https://doi.org/10.1109/TDMR.2016.2622727

593.		Filipovic, L., Selberherr, S.: Stress in Three-Dimensionally Integrated Sensor Systems Microelectronics Reliability, 61 (2016), S. 3 - 10. https://doi.org/10.1016/j.microrel.2015.09.013

592.		Glaser, M., Kitzler, A., Johannes, A., Pruncal, S., Potts, H., Conesa-Boj, S., Filipovic, L., Kosina, H., Skorupa, W., Bertagnolli, E., Ronning, C., Fontcuberta i Morral, A., Lugstein, A.: Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures Nano Letters, 16 (2016), 6; S. 3507 - 3518. https://doi.org/10.1021/acs.nanolett.6b00315

591.		Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa, G., Waltl, M., Gös, W., Grasser, T.: The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits Solid-State Electronics, 125 (2016), S. 52 - 62. https://doi.org/10.1016/j.sse.2016.07.010

590.		Nazemi, S., Pourfath, M., Soleimani, E., Kosina, H.: The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study Journal of Applied Physics, 114 (2016), 14; S. 144302-1 - 1444302-9. https://doi.org/10.1063/1.4945392

589.		Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach Journal of Electronic Materials, 45 (2016), 3; S. 1584 - 1588. https://doi.org/10.1007/s11664-015-4124-7

588.		Illarionov, Yu., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Müller, T., Grasser, T.: The Role of Charge Trapping in MoS₂/SiO₂ and MoS₂/hBN Field-Effect Transistors 2D Materials, 3 (2016), 3; S. 035004-1 - 035004-10. https://doi.org/10.1088/2053-1583/3/3/035004

587.		Sharma, P., Tyaginov, S. E., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices Solid-State Electronics, 115 (2016), Part B; S. 185 - 191. https://doi.org/10.1016/j.sse.2015.08.014

586.		Rescher, G., Pobegen, G., Grasser, T.: Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress Materials Science Forum, 858 (2016), S. 481 - 484. https://doi.org/10.4028/www.scientific.net/MSF.858.481

585.		Tyaginov, S. E., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T.: Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs IEEE Electron Device Letters, 37 (2016), 1; S. 84 - 87. https://doi.org/10.1109/LED.2015.2503920

584.		Rupp, K., Tillet, Ph., Rudolf, F., Weinbub, J., Morhammer, A., Grasser, T., Jüngel, A., Selberherr, S.: ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures SIAM Journal on Scientific Computing, 38 (2016), 5; S. S412 - S439. https://doi.org/10.1137/15M1026419

583.		Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: A Comparison of Approaches for the Solution of the Wigner Equation Mathematics and Computers in Simulation, 107 (2015), S. 108 - 119. https://doi.org/10.1016/j.matcom.2014.06.001

582.		Sefidmooye Azar, N., Pourfath, M.: A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites IEEE Transactions on Electron Devices, 62 (2015), 5; S. 1584 - 1589. https://doi.org/10.1109/TED.2015.2411992

581.		Vexler, M. I., Illarionov, Yu., Tyaginov, S. E., Grasser, T.: Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices Semiconductors (Physics of Semiconductor Devices), 49 (2015), 2; S. 259 - 263. https://doi.org/10.1134/S1063782615020207

580.		Sellier, J. M., Nedjalkov, M., Dimov, I.: An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism Physics Reports, 577 (2015), S. 1 - 34. https://doi.org/10.1016/j.physrep.2015.03.001

579.		Dimov, I., Nedjalkov, M., Sellier, J. M., Selberherr, S.: Boundary Conditions and the Wigner Equation Solution Journal of Computational Electronics, 14 (2015), 4; S. 859 - 863. https://doi.org/10.1007/s10825-015-0720-2

578.		Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs Microelectronics Reliability, 55 (2015), 9-10; S. 1427 - 1432. https://doi.org/10.1016/j.microrel.2015.06.021

577.		Stanojevic, Z., Baumgartner, O., Filipovic, L., Kosina, H., Karner, M., Kernstock, C., Prause, P.: Consistent Low-Field Mobility Modeling for Advanced MOS Devices Solid-State Electronics, 112 (2015), S. 37 - 45. https://doi.org/10.1016/j.sse.2015.02.008

576.		Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., Orio, R., Selberherr, S.: Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias Microelectronic Engineering, 137 (2015), S. 141 - 145. https://doi.org/10.1016/j.mee.2014.11.014

575.		Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S., Dimov, I.: Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition Journal of Computational Electronics, 14 (2015), 1; S. 151 - 162. https://doi.org/10.1007/s10825-014-0635-3

574.		Weinbub, J., Ellinghaus, P., Nedjalkov, M.: Domain Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method Journal of Computational Electronics, 14 (2015), 4; S. 922 - 929. https://doi.org/10.1007/s10825-015-0730-0

573.		Palankovski, V., Vainshtein, S., Yuferev, V., Kostamovaara, J., Egorkin, V.: Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs Applied Physics Letters, 106 (2015), 18; S. 183505-1 - 183505-5. https://doi.org/10.1063/1.4921006

572.		Osintsev, D., Sverdlov, V., Selberherr, S.: Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films Solid-State Electronics, 112 (2015), S. 46 - 50. https://doi.org/10.1016/j.sse.2015.02.007

571.		Coppeta, R., Holec, D., Ceric, H., Grasser, T.: Evaluation of Dislocation Energy in Thin Films Philosophical Magazine, 95 (2015), 2; S. 186 - 209. https://doi.org/10.1080/14786435.2014.994573

570.		Kaczer, B., Franco, J., Roussel, Ph. J., Groeseneken, G., Chiarella, T., Horiguchi, N., Grasser, T.: Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs IEEE Electron Device Letters, 36 (2015), 4; S. 300 - 302. https://doi.org/10.1109/LED.2015.2404293

569.		Illarionov, Yu., Bina, M., Tyaginov, S. E., Rott, K., Kaczer, B., Reisinger, H., Grasser, T.: Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs IEEE Transactions on Electron Devices, 62 (2015), 9; S. 2730 - 2737. https://doi.org/10.1109/TED.2015.2454433

568.		Asad, M., Salimian, S., Sheikhi, M., Pourfath, M.: Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS₂ Nanoparticles Sensors and Actuators A: Physical, 232 (2015), S. 285 - 291. https://doi.org/10.1016/j.sna.2015.06.018

567.		Asad, M., Sheikhi, M., Pourfath, M., Moradi, M.: High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs Sensors and Actuators B: Chemical, 210 (2015), S. 1 - 8. https://doi.org/10.1016/j.snb.2014.12.086

566.		El-Sayed, A., Watkins, M., Grasser, T., Afanas´Ev, V., Shluger, A.: Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide Microelectronic Engineering, 147 (2015), S. 141 - 144. https://doi.org/10.1016/j.mee.2015.04.073

565.		Illarionov, Yu., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T.: Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences IEEE Transactions on Electron Devices, 62 (2015), 11; S. 3876 - 3881. https://doi.org/10.1109/TED.2015.2480704

564.		El-Sayed, A., Watkins, M., Grasser, T., Afanas´Ev, V., Shluger, A.: Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide Physical Review Letters, 114 (2015), 11; S. 115503-1 - 115503-5. https://doi.org/10.1103/PhysRevLett.114.115503

563.		Wang, L., Brown, A., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs IEEE Transactions on Electron Devices, 62 (2015), 7; S. 2106 - 2112. https://doi.org/10.1109/TED.2015.2436351

562.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S.: Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop Solid-State Electronics, 108 (2015), S. 2 - 7. https://doi.org/10.1016/j.sse.2014.12.023

561.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.: Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures Microelectronic Engineering, 147 (2015), S. 89 - 91. https://doi.org/10.1016/j.mee.2015.04.072

560.		Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., Selberherr, S.: Intrinsic Stress Analysis of Tungsten-Lined Open TSVs Microelectronics Reliability, 55 (2015), 9-10; S. 1843 - 1848. https://doi.org/10.1016/j.microrel.2015.06.014

559.		Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G.: Investigation of Novel Silicon PV Cells of a Lateral Type Silicon, 7 (2015), 3; S. 283 - 291. https://doi.org/10.1007/s12633-014-9227-x

558.		Karamitaheri, H., Pourfath, M., Kosina, H., Neophytou, N.: Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons Physical Review B, 91 (2015), 16; S. 165410-1 - 165410-15. https://doi.org/10.1103/PhysRevB.91.165410

557.		Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J.M., Minixhofer, R., Ceric, H., Grasser, T.: Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation IEEE Transactions on Electron Devices, 62 (2015), 6; S. 1811 - 1818. https://doi.org/10.1109/TED.2015.2421282

556.		Windbacher, T., Ghosh, J., Makarov, A., Sverdlov, V., Selberherr, S.: Modelling of Multipurpose Spintronic Devices International Journal of Nanotechnology, 12 (2015), 3/4; S. 313 - 331. https://doi.org/10.1504/IJNT.2015.067215

555.		Elahi, M., Khaliji, K., Tabatabaei, S. M., Pourfath, M., Asgari, R.: Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain Physical Review B, 91 (2015), 11; S. 1154121 - 1154128. https://doi.org/10.1103/PhysRevB.91.115412

554.		Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H.: Numerical Study of Graphene Superlattice-Based Photodetectors IEEE Transactions on Electron Devices, 62 (2015), 2; S. 593 - 600. https://doi.org/10.1109/TED.2014.2383354

553.		Tyaginov, S. E., Bina, M., Franco, J., Wimmer, Y., Kaczer, B., Grasser, T.: On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation Japanese Journal of Applied Physics, 54 (2015), S. 1 - 6. https://doi.org/10.7567/JJAP.54.04DC18

552.		Nazemi, S., Pourfath, M., Soleimani, E., Kosina, H.: On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals Journal of Applied Physics, 118 (2015), 20; S. 205303-1 - 205303--6. https://doi.org/10.1063/1.4936310

551.		Moradinasab, M., Pourfath, M., Kosina, H.: Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers IEEE Journal of Quantum Electronics, 51 (2015), 1; S. 1 - 7. https://doi.org/10.1109/JQE.2014.2373171

550.		Filipovic, L., Selberherr, S.: Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors Sensors, 15 (2015), 4; S. 7206 - 7227. https://doi.org/10.3390/s150407206

549.		Sverdlov, V., Selberherr, S.: Silicon Spintronics: Progress and Challenges Physics Reports, 585 (2015), S. 1 - 40. https://doi.org/10.1016/j.physrep.2015.05.002

548.		Hosseini, M., Elahi, M., Pourfath, M., Esseni, D.: Strain Induced Mobility Modulation in Single-Layer MoS₂ Journal of Physics D: Applied Physics, 48 (2015), 37; S. 375104-1 - 375104-11. https://doi.org/10.1088/0022-3727/48/37/375104

547.		Hosseini, M., Elahi, M., Pourfath, M., Esseni, D.: Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S , Se) IEEE Transactions on Electron Devices, 62 (2015), 10; S. 3192 - 3198. https://doi.org/10.1109/TED.2015.2461617

546.		Illarionov, Yu., Vexler, M. I., Karner, M., Tyaginov, S. E., Cervenka, J., Grasser, T.: TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures Current Applied Physics, 15 (2015), S. 78 - 83. https://doi.org/10.1016/j.cap.2014.10.015

545.		Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H.: The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices Journal of Applied Physics, 118 (2015), 3; S. 224301-1 - 224301-6. https://doi.org/10.1063/1.4936839

544.		Nedjalkov, M., Weinbub, J., Ellinghaus, P., Selberherr, S.: The Wigner Equation in the Presence of Electromagnetic Potentials Journal of Computational Electronics, 14 (2015), 4; S. 888 - 893. https://doi.org/10.1007/s10825-015-0732-y

543.		El-Sayed, A., Wimmer, Y., Gös, W., Grasser, T., Afanas´Ev, V., Shluger, A.: Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide Physical Review B, 92 (2015), 1; S. 014107-1 - 014107-11. https://doi.org/10.1103/PhysRevB.92.014107

542.		Rudolf, F., Rupp, K., Weinbub, J., Morhammer, A., Selberherr, S.: Transformation Invariant Local Element Size Specification Applied Mathematics and Computation, 267 (2015), S. 195 - 206. https://doi.org/10.1016/j.amc.2015.04.027

541.		Neophytou, N., Karamitaheri, H., Kosina, H.: Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study Journal of Electronic Materials, 44 (2015), 6; S. 1599 - 1605. https://doi.org/10.1007/s11664-014-3488-4

540.		Ghobadi, N., Pourfath, M.: Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing IEEE Electron Device Letters, 36 (2015), 3; S. 280 - 282. https://doi.org/10.1109/LED.2014.2388452

539.		Hosseini, M., Elahi, M., Pourfath, M., Esseni, D.: Very Large Strain Gauges Based on Single Layer MoSe₂ and WSe₂ for Sensing Applications Applied Physics Letters, 107 (2015), 25; S. 253503-1 - 253503-4. https://doi.org/10.1063/1.4937438

538.		Weinbub, J., Wastl, M., Rupp, K., Rudolf, F., Selberherr, S.: ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering Applied Mathematics and Computation, 267 (2015), S. 282 - 293. https://doi.org/10.1016/j.amc.2015.03.094

537.		Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: A Benchmark Study of the Wigner Monte Carlo Method Monte Carlo Methods and Applications, 20 (2014), 1; S. 43 - 51. https://doi.org/10.1515/mcma-2013-0018

536.		Ghobadi, N., Pourfath, M.: A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures IEEE Transactions on Electron Devices, 61 (2014), 1; S. 186 - 192. https://doi.org/10.1109/TED.2013.2291788

535.		Djavid, N., Khaliji, K., Tabatabaei, S. M., Pourfath, M.: A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons IEEE Transactions on Electron Devices, 61 (2014), 1; S. 23 - 29. https://doi.org/10.1109/TED.2013.2290773

534.		Weinbub, J., Hössinger, A.: Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method Journal of Computational Electronics, 13 (2014), 4; S. 877 - 884. https://doi.org/10.1007/s10825-014-0604-x

533.		Rupp, K., Tillet, Ph., Jüngel, A., Grasser, T.: Achieving Portable High Performance for Iterative Solvers on Accelerators Proceedings in Applied Mathematics and Mechanics, 14 (2014), 1; S. 963 - 964. https://doi.org/10.1002/pamm.201410462

532.		Osintsev, D., Sverdlov, V., Selberherr, S.: Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films Advanced Materials Research - Print/CD, 854 (2014), S. 29 - 34. https://doi.org/10.4028/www.scientific.net/AMR.854.29

531.		Illarionov, Yu., Bina, M., Tyaginov, S. E., Grasser, T.: An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs Japanese Journal of Applied Physics, 53 (2014), S. 04EC22-1 - 04EC22-4. https://doi.org/10.7567/JJAP.53.04EC22

530.		Karamitaheri, H., Neophytou, N., Kosina, H.: Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires Journal of Applied Physics, 115 (2014), S. 024302_1 - 024302_7. https://doi.org/10.1063/1.4858375

529.		Gholipour, M., Masoumi, N., Chen, Y.C., Chen, D., Pourfath, M.: Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design IEEE Transactions on Electron Devices, 61 (2014), 12; S. 4000 - 4006. https://doi.org/10.1109/TED.2014.2362774

528.		Illarionov, Yu., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T.: Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors Applied Physics Letters, 105 (2014), 14; S. 1435071 - 1435075. https://doi.org/10.1063/1.4897344

527.		Camargo, V. V. A., Kaczer, B., Grasser, T., Wirth, G.: Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics Microelectronics Reliability, 54 (2014), 11; S. 2364 - 2370.

526.		Reininger, P., Schwarz, B., Detz, H., MacFarland, D., Zederbauer, T., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G.: Diagonal-Transition Quantum Cascade Detector Applied Physics Letters, 105 (2014), 091108; S. 1 - 4. https://doi.org/10.1063/1.4894767

525.		Illarionov, Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Sokolov, N. S.: Electrical and Optical Characterization of Au/CaF₂/p-Si(111) Tunnel-Injection Diodes Journal of Applied Physics, 115 (2014), S. 223706-1 - 223706-5. https://doi.org/10.1063/1.4882375

524.		Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S.: Electromigration Reliability of Open TSV Structures Microelectronics Reliability, 54 (2014), 9-10; S. 2133 - 2137. https://doi.org/10.1016/j.microrel.2014.07.099

523.		Sellier, J. M., Amoroso, S., Nedjalkov, M., Selberherr, S., Asenov, A., Dimov, I.: Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches Physica A: Statistical Mechanics and its Applications, 398 (2014), S. 194 - 198. https://doi.org/10.1016/j.physa.2013.12.045

522.		Narducci, D., Lorenzi, B., Zianni, X., Neophytou, N., Frabboni, S., Gazzadi, G., Roncaglia, A., Suriano, F.: Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys Physica Status Solidi A, 211 (2014), 6; S. 1255 - 1258. https://doi.org/10.1002/pssa.201300130

521.		Neophytou, N., Kosina, H.: Gated Si Nanowires for Large Thermoelectric Power Factors Applied Physics Letters, 105 (2014), 7; S. 073119-1 - 5. https://doi.org/10.1063/1.4893977

520.		Asad, M., Fathipour, M., Sheikhi, M., Pourfath, M.: High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles Sensors and Actuators A: Physical, 220 (2014), S. 213 - 220. https://doi.org/10.1016/j.sna.2014.10.017

519.		Weinbub, J., Rupp, K., Selberherr, S.: Highly Flexible and Reusable Finite Element Simulations with ViennaX Journal of Computational and Applied Mathematics, 270 (2014), S. 484 - 495. https://doi.org/10.1016/j.cam.2013.12.013

518.		Tapajna, M., Killat, N., Palankovski, V., Gregusova, D., Cico, K., Carlin, J., Grandjean, N., Kuball, M., Kuzmik, J.: Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices, 61 (2014), 8; S. 2793 - 2801. https://doi.org/10.1109/TED.2014.2332235

517.		Pobegen, G., Aichinger, T., Salinaro, A., Grasser, T.: Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs Materials Science Forum, 778-780 (2014), S. 959 - 962. https://doi.org/10.4028/www.scientific.net/MSF.778-780.959

516.		Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Seinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F.: Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques Microelectronic Engineering, 117 (2014), S. 57 - 66. https://doi.org/10.1016/j.mee.2013.12.025

515.		Ceric, H., Orio, R., Zisser, W. H., Selberherr, S.: Microstructural Impact on Electromigration: A TCAD Study Facta universitatis - series: Electronics and Energetics, 27 (2014), 1; S. 1 - 11. https://doi.org/10.2298/FUEE1401001C

514.		Rott, G.A., Rott, K., Reisinger, H., Gustin, W., Grasser, T.: Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors Microelectronics Reliability, 54 (2014), 9-10; S. 2310 - 2314. https://doi.org/10.1016/j.microrel.2014.07.040

513.		Tyaginov, S. E., Illarionov, Yu., Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., Grasser, T.: Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric Journal of Computational Electronics, 13 (2014), 3; S. 733 - 738. https://doi.org/10.1007/s10825-014-0593-9

512.		Tyaginov, S. E., Wimmer, Y., Grasser, T.: Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment Facta Universitatis (eingeladen), 27 (2014), 4; S. 479 - 508. https://doi.org/10.2298/FUEE1404479T

511.		Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W.: Modeling the Growth of Tin Dioxide using Spray Pyrolysis Deposition for Gas Sensor Applications IEEE Transactions on Semiconductor Manufacturing, 27 (2014), 2; S. 269 - 277. https://doi.org/10.1109/TSM.2014.2298883

510.		Amoroso, S., Gerrer, L., Nedjalkov, M., Hussin, R., Alexander, C., Asenov, A.: Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues IEEE Transactions on Electron Devices, 61 (2014), 5; S. 1292 - 1298. https://doi.org/10.1109/TED.2014.2312820

509.		Wolf, S., Neophytou, N., Stanojevic, Z., Kosina, H.: Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes Journal of Electronic Materials, 43 (2014), 10; S. 3870 - 3875. https://doi.org/10.1007/S11664-014-3324-X

508.		Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Kaczer, B.: NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark IEEE Transactions on Electron Devices, 61 (2014), 11; S. 3586 - 3593. https://doi.org/10.1109/TED.2014.2353578

507.		Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S.: Novel Bias-Field-Free Spin Transfer Oscillator Journal of Applied Physics, 115 (2014), 17; S. 17C901-1 - 17C901-3. https://doi.org/10.1063/1.4862936

506.		Ghobadi, N., Pourfath, M.: On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors Journal of Applied Physics, 116 (2014), 18; S. 1845061 - 1845067. https://doi.org/10.1063/1.4901584

505.		Mojibpour, A., Pourfath, M., Kosina, H.: Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers Optics Express, 22 (2014), 17; S. 20607 - 20612. https://doi.org/10.1364/OE.22.020607

504.		Lorenzi, B., Narducci, D., Tonini, R., Frabboni, S., Gazzadi, G., Ottaviani, G., Neophytou, N., Zianni, X.: Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids Journal of Electronic Materials, 43 (2014), 10; S. 3812 - 3816. https://doi.org/10.1007/s11664-014-3170-x

503.		Bina, M., Tyaginov, S. E., Franco, J., Rupp, K., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T.: Predictive Hot-Carrier Modeling of n-Channel MOSFETs IEEE Transactions on Electron Devices, 61 (2014), 9; S. 3103 - 3110. https://doi.org/10.1109/TED.2014.2340575

502.		Makarov, A., Sverdlov, V., Selberherr, S.: Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer International Journal of High Speed Electronics and Systems (eingeladen), 23 (2014), 3&4; S. 1450014-1 - 1450014-15. https://doi.org/10.1142/S0129156414500141

501.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates Advanced Materials Research - Print/CD, 854 (2014), S. 89 - 95. https://doi.org/10.4028/www.scientific.net/AMR.854.89

500.		Kuzmik, J., Tapajna, M., Válik, L., Molnar, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., Würfl, J.: Self-Heating in GaN Transistors Designed for High-Power Operation IEEE Transactions on Electron Devices, 61 (2014), 10; S. 3429 - 3434. https://doi.org/10.1109/TED.2014.2350516

499.		Molnar, M., Donoval, D., Kuzmik, J., Marek, J., Chvala, A., Pribytny, P., Mikolasek, V., Rendek, K., Palankovski, V.: Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors Applied Surface Science, 312 (2014), S. 157 - 161. https://doi.org/10.1016/j.apsusc.2014.04.078

498.		Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S.: Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer Journal of Applied Physics, 115 (2014), 17; S. 17C503-1 - 17C503-3. https://doi.org/10.1063/1.4856056

497.		Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S.: Spin Injection in a Semiconductor Through a Space-Charge Layer Solid-State Electronics, 101 (2014), S. 116 - 121. https://doi.org/10.1016/j.sse.2014.06.035

496.		Soleimani Kahnoj, S., Touski, S., Pourfath, M.: The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons Applied Physics Letters, 105 (2014), 10; S. 1035021 - 1035024. https://doi.org/10.1063/1.4894859

495.		Filipovic, L., Selberherr, S.: The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias Microelectronics Reliability, 54 (2014), 9-10; S. 1953 - 1958. https://doi.org/10.1016/j.microrel.2014.07.014

494.		Rudolf, F., Weinbub, J., Rupp, K., Selberherr, S.: The Meshing Framework ViennaMesh for Finite Element Applications Journal of Computational and Applied Mathematics, 270 (2014), S. 166 - 177. https://doi.org/10.1016/j.cam.2014.02.005

493.		Wolf, S., Neophytou, N., Kosina, H.: Thermal Conductivity of Silicon Nanomeshes: Effects of Porosity and Roughness Journal of Applied Physics, 115 (2014), 20; S. 204306 - 204313. https://doi.org/10.1063/1.4879242

492.		Weinbub, J., Rupp, K., Selberherr, S.: ViennaX: A Parallel Plugin Execution Framework for Scientific Computing Engineering with Computers, 30 (2014), 4; S. 651 - 668. https://doi.org/10.1007/s00366-013-0314-1

491.		Tabatabaei, S. M., Noei, M., Khaliji, K., Pourfath, M., Fathipour, M.: A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor Journal of Applied Physics, 113 (2013), S. 163708-1 - 163708-6. https://doi.org/10.1063/1.4803032

490.		Vexler, M. I., Tyaginov, S. E., Illarionov, Yu., Sing, Y. K., Shenp, A. D., Fedorov, V. V., Isakov, D. V.: A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures Semiconductors (Physics of Semiconductor Devices), 47 (2013), 5; S. 686 - 694. https://doi.org/10.1134/S1063782613050230

489.		Filipovic, L., Selberherr, S.: A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework Microelectronic Engineering, 107 (2013), S. 23 - 32. https://doi.org/10.1016/j.mee.2013.02.083

488.		Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Seinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W.: A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework Engineering Letters (eingeladen), 21 (2013), 4; S. 224 - 240.

487.		Starkov, A. S., Pakhomov, O. V., Starkov, I.: Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling Ferroelectrics, 442 (2013), 1; S. 10 - 17. https://doi.org/10.1080/00150193.2013.773854

486.		Pobegen, G., Nelhiebel, M., de Filippis, S., Grasser, T.: Accurate High Temperature Measurements Using Local Polysilicon Heater Structures IEEE Transactions on Device and Materials Reliability, 99 (2013), PP; S. 1 - 8. https://doi.org/10.1109/TDMR.2013.2265015

485.		Neophytou, N., Karamitaheri, H., Kosina, H.: Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers Journal of Computational Electronics, 12 (2013), 4; S. 611 - 622. https://doi.org/10.1007/s10825-013-0522-3

484.		Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons IEEE Transactions on Electron Devices, 60 (2013), 7; S. 2142 - 2147. https://doi.org/10.1109/TED.2013.2262049

483.		Karamitaheri, H., Neophytou, N., Kosina, H.: Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation Journal of Applied Physics, 113 (2013), 20; S. 204305-1 - 204305-9. https://doi.org/10.1063/1.4808100

482.		Karamitaheri, H., Neophytou, N., Karami Taheri, M., Faez, R., Kosina, H.: Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method Journal of Electronic Materials, 42 (2013), 7; S. 2091 - 2097. https://doi.org/10.1007/s11664-013-2533-z

481.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S.: Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors Sains Malaysiana, 42 (2013), 2; S. 205 - 211.

480.		Schwaha, P., Querlioz, D., Dollfus, P., Saint-Martin, J., Nedjalkov, M., Selberherr, S.: Decoherence Effects in the Wigner Function Formalism Journal of Computational Electronics, 12 (2013), 3; S. 388 - 396. https://doi.org/10.1007/s10825-013-0480-9

479.		Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S.: Decoherence and Time Reversibility: The Role of Randomness at Interfaces Journal of Applied Physics, 114 (2013), 17; S. 174902-1 - 174902-7. https://doi.org/10.1063/1.4828736

478.		Starkov, A. S., Starkov, I.: Domain Wall Motion for Slowly Varying Electric Field Ferroelectrics, 442 (2013), 1; S. 1 - 9. https://doi.org/10.1080/00150193.2013.773852

477.		Pobegen, G., Grasser, T.: Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps Materials Science Forum, 740-742 (2013), S. 757 - 760. https://doi.org/10.4028/www.scientific.net/MSF.740-742.757

476.		Kaczer, B., Toledano-Luque, M., Gös, W., Grasser, T., Groeseneken, G.: Gate Current Random Telegraph Noise and Single Defect Conduction Microelectronic Engineering, 109 (2013), S. 123 - 125. https://doi.org/10.1016/j.mee.2013.03.110

475.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory Solid-State Electronics, 84 (2013), S. 191 - 197. https://doi.org/10.1016/j.sse.2013.02.017

474.		Mahmoudi, H., Sverdlov, V., Selberherr, S.: Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement Journal of Superconductivity and Novel Magnetism, 26 (2013), 5; S. 1745 - 1749. https://doi.org/10.1007/s10948-012-2034-y

473.		Illarionov, Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Sokolov, N. S.: Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer Thin Solid Films, 545 (2013), S. 580 - 583. https://doi.org/10.1016/j.tsf.2013.07.050

472.		Starkov, I., Enichlmair, H.: Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs Journal of Vacuum Science & Technology B, 31 (2013), 1; S. 01A118-1 - 01A118-7. https://doi.org/10.1116/1.4774106

471.		Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S.: Multiple Purpose Spin Transfer Torque Operated Devices Facta Universitatis, 26 (2013), 3; S. 227 - 238. https://doi.org/10.2298/FUEE1303227W

470.		Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Roussel, Ph. J., Witters, L., Grasser, T., Groeseneken, G.: NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack IEEE Transactions on Device and Materials Reliability (eingeladen), 13 (2013), 4; S. 497 - 506. https://doi.org/10.1109/TDMR.2013.2281731

469.		Pobegen, G., Tyaginov, S. E., Nelhiebel, M., Grasser, T.: Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation IEEE Electron Device Letters, 34 (2013), 8; S. 939 - 941. https://doi.org/10.1109/LED.2013.2262521

468.		Pobegen, G., Grasser, T.: On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale IEEE Transactions on Electron Devices, 60 (2013), 7; S. 2148 - 2155. https://doi.org/10.1109/TED.2013.2264816

467.		Neophytou, N., Kosina, H.: Optimizing Thermoelectric Power Factor by Means of a Potential Barrier Journal of Applied Physics, 114 (2013), S. 044315_1 - 044315-6. https://doi.org/10.1063/1.4816792

466.		Nedjalkov, M., Selberherr, S., Ferry, D.K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I., Schwaha, P.: Physical Scales in the Wigner-Boltzmann Equation Annals of Physics, 328 (2013), S. 220 - 237. https://doi.org/10.1016/j.aop.2012.10.001

465.		Neophytou, N., Zianni, X., Kosina, H., Frabboni, S., Lorenzi, B., Narducci, D.: Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems Journal of Electronic Materials, 43 (2013), 6; S. 1896 - 1904. https://doi.org/10.1007/s11664-013-2898-z

464.		Demidov, D., Ahnert, K., Rupp, K., Gottschling, P.: Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries SIAM Journal on Scientific Computing, 35 (2013), 5; S. 453 - 472. https://doi.org/10.1137/120903683

463.		Aichinger, T., Nelhiebel, M., Grasser, T.: Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures Microelectronics Reliability, 53 (2013), 7; S. 937 - 946. https://doi.org/10.1016/j.microrel.2013.03.007

462.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S.: Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits IEEE Transactions on Magnetics, 49 (2013), 12; S. 5620 - 5628. https://doi.org/10.1109/TMAG.2013.2278683

461.		Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, S., Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J.: Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region IEEE Electron Device Letters, 34 (2013), 3; S. 432 - 434. https://doi.org/10.1109/LED.2013.2241388

460.		Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Kauerauf, T., Mitard, J., Witters, L., Grasser, T., Groeseneken, G.: SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues IEEE Transactions on Electron Devices, 60 (2013), 1; S. 405 - 412.

459.		Franco, J., Kaczer, B., Roussel, Ph. J., Mitard, J., Cho, M., Witters, L., Grasser, T., Groeseneken, G.: SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI IEEE Transactions on Electron Devices, 60 (2013), 1; S. 396 - 404. https://doi.org/10.1109/TED.2012.2225625

458.		Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S.: Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate Microelectronic Engineering, 112 (2013), S. 188 - 192. https://doi.org/10.1016/j.mee.2012.12.030

457.		Neophytou, N., Zianni, X., Kosina, H., Frabboni, S., Lorenzi, B., Narducci, D.: Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si Nanotechnology, 24 (2013), 20; S. 205402. https://doi.org/10.1088/0957-4484/24/20/205402

456.		Singulani, A. P., Ceric, H., Selberherr, S.: Stress Evolution in the Metal Layers of TSVs with Bosch Scallops Microelectronics Reliability, 53 (2013), S. 1602 - 1605. https://doi.org/10.1016/j.microrel.2013.07.132

455.		Makarov, A., Sverdlov, V., Selberherr, S.: Structural Optimization of MTJs with a Composite Free Layer Proceedings of SPIE (eingeladen), 8813 (2013), S. 88132Q-1 - 88132Q-9. https://doi.org/10.1117/12.2025568

454.		Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs Solid-State Electronics, 90 (2013), S. 34 - 38. https://doi.org/10.1016/j.sse.2013.02.055

453.		Touski, S., Pourfath, M.: Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons Applied Physics Letters, 103 (2013), 14; S. 1435061 - 1435063. https://doi.org/10.1063/1.4824362

452.		Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Choa, M., Kauerauf, T., Mitard, J., Eneman, G., Witters, L., Grasser, T., Groeseneken, G.: Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs Microelectronic Engineering, 109 (2013), S. 250 - 256. https://doi.org/10.1016/j.mee.2013.03.001

451.		Starkov, A. S., Pakhomov, O. V., Starkov, I.: Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them Journal of Experimental and Theoretical Physics, 116 (2013), 6; S. 987 - 994. https://doi.org/10.1134/S1063776113060149

450.		Toledano-Luque, M., Kaczer, B., Grasser, T., Roussel, Ph. J., Franco, J., Groeseneken, G.: Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions Journal of Vacuum Science & Technology B, 31 (2013), 1; S. 01A114-1 - 01A114-4. https://doi.org/10.1116/1.4772587

449.		Kareva, G.G., Vexler, M. I., Illarionov, Yu.: Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode Microelectronic Engineering, 109 (2013), S. 270 - 273. https://doi.org/10.1016/j.mee.2013.03.063

448.		Mennemann, J.-F., Jüngel, A., Kosina, H.: Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator Journal of Computational Physics, 239 (2013), S. 187 - 205. https://doi.org/10.1016/j.jcp.2012.12.009

447.		Khaliji, K., Noei, M., Tabatabaei, S. M., Pourfath, M., Fathipour, M., Abdi, Y.: Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain IEEE Transactions on Electron Devices, 60 (2013), 8; S. 2464 - 2470. https://doi.org/10.1109/TED.2013.2266300

446.		Karamitaheri, H., Neophytou, N., Kosina, H.: Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires Journal of Electronic Materials, 1 (2013), S. 1 - 8. https://doi.org/10.1007/s11664-013-2884-5

445.		Camargo, V. V. A., Kaczer, B., Wirth, G., Grasser, T., Groeseneken, G.: Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP (2013), 99. https://doi.org/10.1109/TVLSI.2013.2240323

444.		Baumgartner, O., Stanojevic, Z., Schnass, K., Karner, M., Kosina, H.: VSP - A Quantum-Electronic Simulation Framework Journal of Computational Electronics, 12 (2013), 4; S. 701 - 721. https://doi.org/10.1007/s10825-013-0535-y

443.		Nedjalkov, M., Schwaha, P., Selberherr, S., Sellier, J. M., Vasileska, D.: Wigner Quasi-Particle Attributes - An Asymptotic Perspective Applied Physics Letters, 102 (2013), 16; S. 163113-1 - 163113-4. https://doi.org/10.1063/1.4802931

442.		Noei, M., Moradinasab, M., Fathipour, M.: A Computational Study of Ballistic Graphene Nanoribbon Field Effect Transistors Physica E: Low-dimensional Systems and Nanostructures, 44 (2012), 7-8; S. 1780 - 1786. https://doi.org/10.1016/j.physe.2011.12.018

441.		Schanovsky, F., Baumgartner, O., Sverdlov, V., Grasser, T.: A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures Journal of Computational Electronics, 11 (2012), 3; S. 218 - 224. https://doi.org/10.1007/s10825-012-0403-1

440.		Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S.: A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons IEEE Transactions on Electron Devices, 59 (2012), 2; S. 433 - 440. https://doi.org/10.1109/TED.2011.2173690

439.		Schwarz, B., Reininger, P., Detz, H., Zederbauer, T., Andrews, A. M., Kalchmair, S., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G.: A bi-functional quantum cascade device for same-frequency lasing and detection Applied Physics Letters, 101 (2012), S. 1911091 - 1911094. https://doi.org/10.1063/1.4767128

438.		Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H.: Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons Journal of Applied Physics, 111 (2012), 7; S. 074318-1 - 074318-9. https://doi.org/10.1063/1.3702429

437.		Vasicek, M., Cervenka, J., Esseni, D., Palestri, P., Grasser, T.: Applicability of Macroscopic Transport Models to Decananometer MOSFETs IEEE Transactions on Electron Devices, 59 (2012), 3; S. 639 - 646. https://doi.org/10.1109/TED.2011.2181177

436.		Franco, J., Graziano, S., Kaczer, B., Crupi, F., Ragnarsson, L., Grasser, T., Groeseneken, G.: BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic Microelectronics Reliability, 52 (2012), S. 1932 - 1935. https://doi.org/10.1016/j.microrel.2012.06.058

435.		Neophytou, N., Kosina, H.: Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors IEEE Electron Device Letters, 33 (2012), 5; S. 652 - 654. https://doi.org/10.1109/LED.2012.2188879

434.		Kuzmik, J., Vitanov, S., Dua, C., Carlin, J., Ostermaier, C., Alexewicz, A., Strasser, G., Pogany, D., Gornik, E., Grandjean, N., Delage, S., Palankovski, V.: Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors Japanese Journal of Applied Physics, 51 (2012), S. 054102-1 - 054102-5. https://doi.org/10.1143/JJAP.51.054102

433.		Neophytou, N., Kosina, H.: Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands Solid-State Electronics, 70 (2012), S. 81 - 91. https://doi.org/10.1016/j.sse.2011.11.018

432.		Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, Ph. J., Grasser, T., Groeseneken, G.: Defect-Centric Perspective of Time-Dependent BTI Variability Microelectronics Reliability, 52 (2012), 9-10; S. 1883 - 1890. https://doi.org/10.1016/j.microrel.2012.06.120

431.		Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H.: Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness IEEE Transactions on Electron Devices, 59 (2012), 12; S. 3527 - 3532. https://doi.org/10.1109/TED.2012.2218817

430.		Orio, R., Ceric, H., Selberherr, S.: Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via Microelectronics Reliability, 52 (2012), S. 1981 - 1986. https://doi.org/10.1016/j.microrel.2012.07.021

429.		Makarov, A., Sverdlov, V., Selberherr, S.: Emerging Memory Technologies: Trends, Challenges, and Modeling Methods Microelectronics Reliability (eingeladen), 52 (2012), 4; S. 628 - 634. https://doi.org/10.1016/j.microrel.2011.10.020

428.		Karamitaheri, H., Neophytou, N., Pourfath, M., Faez, R., Kosina, H.: Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons Journal of Applied Physics, 111 (2012), 5; S. 054501-1 - 054501-9. https://doi.org/10.1063/1.3688034

427.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling IEEE Transactions on Magnetics, 48 (2012), 4; S. 1289 - 1292. https://doi.org/10.1109/TMAG.2011.2173565

426.		Rupp, K.: High-Level Manipulation of OpenCL-Based Subvectors and Submatrices Procedia Computer Science, 9 (2012), S. 1857 - 1866. https://doi.org/10.1016/j.procs.2012.04.204

425.		Ahmed, S., Holland, K. D., Paydavosi, N., Rogers, C., Alam, A., Neophytou, N., Kienle, D., Vaidyanathan, M.: Impact of Effective Mass on the Scaling Behavior of the f_T and f_max of III-V High-Electron-Mobility Transistors IEEE Transactions on Nanotechnology, 11 (2012), 6; S. 1160 - 1173.

424.		Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, Ph. J., Grasser, T., Asenov, A., Groeseneken, G.: Impact of Individual Charged Gate-Oxide Defects on the Entire I_D -V_G Characteristic of Nanoscaled FETs IEEE Electron Device Letters, 33 (2012), 6; S. 779 - 781.

423.		Starkov, A., Pakhomov, O., Starkov, I.: Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions Ferroelectrics, 427 (2012), 1; S. 78 - 83. https://doi.org/10.1080/00150193.2012.674413

422.		Ceric, H., Orio, R., Selberherr, S.: Interconnect Reliability Dependence on Fast Diffusivity Paths Microelectronics Reliability (eingeladen), 52 (2012), 8; S. 1532 - 1538. https://doi.org/10.1016/j.microrel.2011.09.035

421.		Neophytou, N., Kosina, H.: Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels Journal of Applied Physics, 112 (2012), 2; S. 024305-1 - 024305-6. https://doi.org/10.1063/1.4737122

420.		Ortmann, F., Roche, S., Greer, J. C., Huhs, G., Shulthess, T., Deutsch, T., Weinberger, P., Payne, M., Sellier, J. M., Sprekels, J., Weinbub, J., Rupp, K., Nedjalkov, M., Vasileska, D., Alfi nito, E., Reggiani, L., Guerra, D., Ferry, D.K., Saraniti, M., Goodnick, S.M., Kloes, A., Colombo, L., Lilja, K., Mateos, J., Gonzalez, T., Velazquez, E., Palestri, P., Schenk, A., Macucci, M.: Multi-Scale Modelling for Devices and Circuits E-Nano Newsletter, Special Issue April 2012 (2012), 31 S.

419.		Rott, K., Reisinger, H., Aresu, S., Schlünder, C., Kölpin, K., Gustin, W., Grasser, T.: New Insights on the PBTI Phenomena in SiON pMOSFETs Microelectronics Reliability, 52 (2012), 9-10; S. 1891 - 1894. https://doi.org/10.1016/j.microrel.2012.06.015

418.		Neophytou, N., Kosina, H.: Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires Journal of Computational Electronics (eingeladen), 11 (2012), 1; S. 29 - 44. https://doi.org/10.1007/s10825-012-0383-1

417.		Neophytou, N., Kosina, H.: On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires Journal of Electronic Materials, 41 (2012), 6; S. 1305 - 1311. https://doi.org/10.1007/s11664-011-1891-7

416.		Nematian, H., Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H.: Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices Journal of Applied Physics, 111 (2012), S. 093512-1 - 093512-6. https://doi.org/10.1063/1.4710988

415.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., Selberherr, S.: Physics-Based Modeling of GaN HEMTs IEEE Transactions on Electron Devices, 59 (2012), 3; S. 685 - 693. https://doi.org/10.1109/TED.2011.2179118

414.		Starkov, A., Pakhomov, O., Starkov, I.: Solid-State Cooler: New Opportunities Ferroelectrics, 430 (2012), 1; S. 108 - 114. https://doi.org/10.1080/00150193.2012.677730

413.		Grasser, T.: Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities Microelectronics Reliability (eingeladen), 52 (2012), 1; S. 39 - 70. https://doi.org/10.1016/j.microrel.2011.09.002

412.		Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H.: Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method Journal of Computational Electronics (eingeladen), 11 (2012), 1; S. 14 - 21. https://doi.org/10.1007/s10825-011-0380-9

411.		Stanojevic, Z., Sverdlov, V., Baumgartner, O., Kosina, H.: Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement Solid-State Electronics, 70 (2012), S. 73 - 80. https://doi.org/10.1016/j.sse.2011.11.022

410.		Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S.: Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels Solid-State Electronics, 71 (2012), S. 25 - 29. https://doi.org/10.1016/j.sse.2011.10.015

409.		Orio, R., Ceric, H., Selberherr, S.: A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects Microelectronics Reliability, 51 (2011), S. 1573 - 1577. https://doi.org/10.1016/j.microrel.2011.07.049

408.		Heinzl, R., Schwaha, P.: A Generic Topology Library Science of Computer Programming, 76 (2011), 4; S. 324 - 346. https://doi.org/10.1016/j.scico.2009.09.007

407.		Starkov, I., Tyaginov, S. E., Enichlmair, H., Park, J.M., Ceric, H., Grasser, T.: Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements Solid State Phenomena, 178-179 (2011), S. 267 - 272. https://doi.org/10.4028/www.scientific.net/SSP.178-179.267

406.		Tyaginov, S. E., Starkov, I., Enichlmair, H., Jungemann, C., Park, J.M., Seebacher, E., Orio, R., Ceric, H., Grasser, T.: An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation Microelectronics Reliability, 51 (2011), S. 1525 - 1529. https://doi.org/10.1016/j.microrel.2011.07.089

405.		Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S.: An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons IEEE Transactions on Electron Devices, 58 (2011), 11; S. 3725 - 3735. https://doi.org/10.1109/TED.2011.2163719

404.		Neophytou, N., Kosina, H.: Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation Physical Review B, 84 (2011), S. 085313-1 - 085313-15. https://doi.org/10.1103/PhysRevB.84.085313

403.		Gös, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T.: Bistable Defects as the Cause for NBTI and RTN Solid State Phenomena (eingeladen), 178-179 (2011), S. 473 - 482. https://doi.org/10.4028/www.scientific.net/SSP.178-179.473

402.		Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Franco, J., Ragnarsson, L., Grasser, T., Groeseneken, G.: Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress Applied Physics Letters, 98 (2011), S. 183506-1 - 183506-3. https://doi.org/10.1063/1.3586780

401.		Neophytou, N., Kosina, H.: Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires Physical Review B, 83 (2011), S. 245305-1 - 245305-16. https://doi.org/10.1103/PhysRevB.83.245305

400.		Ceric, H., Selberherr, S.: Electromigration in Submicron Interconnect Features of Integrated Circuits Materials Science and Engineering R-Reports, 71 (2011), 5-6; S. 53 - 86. https://doi.org/10.1016/j.mser.2010.09.001

399.		Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H.: Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices Journal of Applied Physics, 110 (2011), 5; S. 054506-1 - 054506-6. https://doi.org/10.1063/1.3629990

398.		Karamitaheri, H., Pourfath, M., Pazoki, M., Faez, R., Kosina, H.: Graphene-Based Antidots for Thermoelectric Applications Journal of the Electrochemical Society, 158 (2011), 12; S. K213 - K216. https://doi.org/10.1149/2.025112jes

397.		Lorenz, J., Bär, E., Clees, T., Jancke, R., Salzig, C., Selberherr, S.: Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology IEEE Transactions on Electron Devices (eingeladen), 58 (2011), 8; S. 2218 - 2226. https://doi.org/10.1109/TED.2011.2150225

396.		Lorenz, J., Bär, E., Clees, T., Evanschitzky, P., Jancke, R., Kampen, C., Paschen, U., Salzig, C., Selberherr, S.: Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results IEEE Transactions on Electron Devices (eingeladen), 58 (2011), 8; S. 2227 - 2234. https://doi.org/10.1109/TED.2011.2150226

395.		Neophytou, N., Kosina, H.: Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement Applied Physics Letters, 99 (2011), S. 092110-1 - 092110-3. https://doi.org/10.1063/1.3631680

394.		Starkov, I., Tyaginov, S. E., Enichlmair, H., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Ceric, H., Grasser, T.: Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment Journal of Vacuum Science & Technology B, 29 (2011), S. 01AB09-1 - 01AB09-8. https://doi.org/10.1116/1.3534021

393.		Pobegen, G., Aichinger, T., Grasser, T., Nelhiebel, M.: Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs Microelectronics Reliability, 51 (2011), S. 1530 - 1534. https://doi.org/10.1016/j.microrel.2011.06.024

392.		Rabiee Golgir, H., Faez, R., Pazoki, M., Karamitaheri, H., Sarvari, R.: Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity Journal of Applied Physics, 110 (2011), 6; S. 064320-1 - 064320-6. https://doi.org/10.1063/1.3641981

391.		Schanovsky, F., Gös, W., Grasser, T.: Multiphonon Hole Trapping from First Principles Journal of Vacuum Science & Technology B, 29 (2011), 1; S. 01A201-1 - 01A201-5. https://doi.org/10.1116/1.3533269

390.		Garcia-Barrientos, A., Palankovski, V.: Numerical Simulations of Amplification of Space Charge Waves in n-InP Films Materials Science and Engineering B, 176 (2011), 17; S. 1368 - 1372. https://doi.org/10.1016/j.mseb.2011.02.014

389.		Garcia-Barrientos, A., Palankovski, V.: Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity Applied Physics Letters, 98 (2011), S. 072110-1 - 072110-3. https://doi.org/10.1063/1.3555467

388.		Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Hehenberger, Ph., Grasser, T., Mitard, J., Eneman, G., Hoffmann, T. Y., Groeseneken, G.: On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si_0.45Ge_0.55 pMOSFETs Microelectronic Engineering, 88 (2011), 7; S. 1388 - 1391. https://doi.org/10.1016/j.mee.2011.03.065

387.		Starkov, A. S., Pakhomov, O. V., Starkov, I.: Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field Technical Physics Letters, 79 (2011), 12; S. 1139 - 1141. https://doi.org/10.1134/S1063785011120133

386.		Manavizadeh, N., Raissi, F., Soleimani, E.A., Pourfath, M., Selberherr, S.: Performance Assessment of Nanoscale Field Effect Diodes IEEE Transactions on Electron Devices, 58 (2011), 8; S. 2378 - 2384. https://doi.org/10.1109/TED.2011.2152844

385.		Baumgartner, O., Sverdlov, V., Windbacher, T., Selberherr, S.: Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films IEEE Transactions on Nanotechnology, 10 (2011), 4; S. 737 - 743. https://doi.org/10.1109/TNANO.2010.2074211

384.		Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Cho, M., Simoen, E., Groeseneken, G.: Recent Trends in Bias Temperature Instability Journal of Vacuum Science & Technology B (eingeladen), 29 (2011), S. 01AB01-1 - 01AB01-7.

383.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S.: Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer Physica Status Solidi - Rapid Research Letters, 5 (2011), 12; S. 420 - 422. https://doi.org/10.1002/pssr.201105376

382.		Makarov, A., Sverdlov, V., Selberherr, S.: Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations Journal of Vacuum Science & Technology B, 29 (2011), 1; S. 01AD03-1 - 01AD03-5. https://doi.org/10.1116/1.3521503

381.		Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Montalenti, F., Miglio, L.: Strained MOSFETs on Ordered SiGe Dots Solid-State Electronics, 65-66 (2011), S. 81 - 87. https://doi.org/10.1016/j.sse.2011.06.041

380.		Neophytou, N., Klimeck, G., Kosina, H.: Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities Journal of Applied Physics, 109 (2011), S. 053721-1 - 053721-6. https://doi.org/10.1063/1.3556435

379.		Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Cho, M., Grasser, T., Groeseneken, G.: Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress Journal of Vacuum Science & Technology B, 29 (2011), S. 01AA04-1 - 01AA04-5. https://doi.org/10.1116/1.3532947

378.		Dedyk, A., Pavlova, Y., Karmanenko, S., Semenov, A., Semikin, D., Pakhomov, O., Starkov, A., Starkov, I.: Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics Journal of Vacuum Science & Technology B, 29 (2011), S. 01A501-1 - 01A501-5. https://doi.org/10.1116/1.3532944

377.		Toledano-Luque, M., Kaczer, B., Simoen, E., Roussel, Ph. J., Veloso, A., Grasser, T., Groeseneken, G.: Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics Microelectronic Engineering, 88 (2011), S. 1243 - 1246. https://doi.org/10.1016/j.mee.2011.03.097

376.		Rupp, K., Selberherr, S.: The Economic Limit to Moore's Law IEEE Transactions on Semiconductor Manufacturing, 24 (2011), 1; S. 1 - 4. https://doi.org/10.1109/TSM.2010.2089811

375.		Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, Ph., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M.: The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps IEEE Transactions on Electron Devices (eingeladen), 58 (2011), 11; S. 3652 - 3666.

374.		Neophytou, N., Kosina, H.: Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s-SO Atomistic Tight-Binding Model and Boltzmann Transport* Journal of Electronic Materials, 40 (2011), 5; S. 753 - 758. https://doi.org/10.1007/s11664-011-1542-z

373.		Milovanovic, G., Kosina, H.: A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation Journal of Computational Electronics, 9 (2010), 3-4; S. 211 - 217. https://doi.org/10.1007/s10825-010-0325-8

372.		Schanovsky, F., Gös, W., Grasser, T.: An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT Journal of Computational Electronics (eingeladen), 9 (2010), 3-4; S. 135 - 140. https://doi.org/10.1007/s10825-010-0323-x

371.		Neophytou, N., Wagner, M., Kosina, H., Selberherr, S.: Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model Journal of Electronic Materials, 39 (2010), 9; S. 1902 - 1908. https://doi.org/10.1007/s11664-009-1035-5

370.		Lugstein, A., Steinmair, M., Steiger-Thirsfeld, A., Kosina, H., Bertagnolli, E.: Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires Nano Letters, 10 (2010), S. 3204 - 3208. https://doi.org/10.1021/nl102179c

369.		Huang, R., Taylor, A., Himmelsbach, S., Ceric, H., Detzel, T.: Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing Measurement Science & Technology, 21 (2010), 5; S. 55702 - 55710.

368.		Nedjalkov, M., Kosina, H., Schwaha, P.: Device Modeling in the Wigner Picture Journal of Computational Electronics, 9 (2010), 3-4; S. 218 - 223. https://doi.org/10.1007/s10825-010-0316-9

367.		Starkov, A. S., Pakhomov, O. V., Starkov, I.: Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model JETP Letters, 91 (2010), 10; S. 507 - 511.

366.		Maroldt, S., Wiegner, D., Vitanov, S., Palankovski, V., Quay, R., Ambacher, O.: Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz IEICE Transactions on Electronics, E93-C (2010), 8; S. 1238 - 1244.

365.		Tyaginov, S. E., Vexler, M., El Hdiy, A., Gacem, K., Zaporojtchenko, V.: Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures Materials Science in Semiconductor Processing, 13 (2010), S. 405 - 410. https://doi.org/10.1016/j.mssp.2011.07.003

364.		Windbacher, T., Sverdlov, V., Baumgartner, O., Selberherr, S.: Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting Solid-State Electronics, 54 (2010), 2; S. 137 - 142. https://doi.org/10.1016/j.sse.2009.12.008

363.		Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H.: Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation Solid-State Electronics, 54 (2010), S. 143 - 148. https://doi.org/10.1016/j.sse.2009.12.010

362.		Aichinger, T., Nelhiebel, M., Grasser, T.: Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen Applied Physics Letters, 96 (2010), S. 133511-1 - 133511-3.

361.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.: High-Temperature Modeling of AlGaN/GaN HEMTs Solid-State Electronics, 54 (2010), 10; S. 1105 - 1112. https://doi.org/10.1016/j.sse.2010.05.026

360.		Aichinger, T., Nelhiebel, M., Einspieler, S., Grasser, T.: In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; S. 3 - 8.

359.		Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.: Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling Microelectronics Reliability, 50 (2010), S. 1267 - 1272. https://doi.org/10.1016/j.microrel.2010.0

358.		Neophytou, N., Kosina, H.: Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis Nano Letters, 10 (2010), S. 4913 - 4919. https://doi.org/10.1021/nl102875k

357.		Rupp, K., Jüngel, A., Grasser, T.: Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors Journal of Computational Physics, 229 (2010), S. 8750 - 8765.

356.		Ryan, J., Lenahan, P., Grasser, T., Enichlmair, H.: Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance Applied Physics Letters, 96 (2010), 22; S. 223509-1 - 223509-3. https://doi.org/10.1063/1.3428783

355.		Aichinger, T., Nelhiebel, M., Einspieler, S., Grasser, T.: Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress Journal of Applied Physics, 107 (2010), S. 024508-1 - 024508-8.

354.		Neophytou, N., Kim, S., Klimeck, G., Kosina, H.: On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias Journal of Applied Physics, 107 (2010), S. 113701-1 - 113701-9. https://doi.org/10.1063/1.3372764

353.		Orio, R., Ceric, H., Selberherr, S.: Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models Microelectronics Reliability (eingeladen), 50 (2010), 6; S. 775 - 789. https://doi.org/10.1016/j.microrel.2010.01.007

352.		Kaczer, B., Roussel, Ph. J., Grasser, T., Groeseneken, G.: Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI IEEE Electron Device Letters, 31 (2010), 5; S. 411 - 413. https://doi.org/10.1109/LED.2010.2044014

351.		Makarov, A., Sverdlov, V., Selberherr, S.: Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique Journal of Computational Electronics, 9 (2010), 3-4; S. 146 - 152. https://doi.org/10.1007/s10825-010-0317-8

350.		Huang, R., Robl, W., Ceric, H., Detzel, T., Dehm, G.: Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; S. 47 - 54. https://doi.org/10.1109/TDMR.2009.2032768

349.		Rupp, K., Selberherr, S.: The Economic Limit to Moore´s Law Proceedings of the IEEE, 98 (2010), 3; S. 351 - 353. https://doi.org/10.1109/JPROC.2010.2040205

348.		Ertl, O., Selberherr, S.: Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation Microelectronic Engineering, 87 (2010), 1; S. 20 - 29. https://doi.org/10.1016/j.mee.2009.05.011

347.		Grasser, T., Reisinger, H., Wagner, P.-J., Kaczer, B.: Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors Physical Review B, 82 (2010), S. 245318-1 - 245318-10. https://doi.org/10.1103/PhysRevB.82.245318

346.		Aichinger, T., Nelhiebel, M., Grasser, T.: A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI IEEE Transactions on Electron Devices, 56 (2009), 12; S. 3018 - 3026.

345.		Ceric, H., Orio, R., Cervenka, J., Selberherr, S.: A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects IEEE Transactions on Device and Materials Reliability, 9 (2009), 1; S. 9 - 19. https://doi.org/10.1109/TDMR.2008.2000893

344.		Ertl, O., Selberherr, S.: A Fast Level Set Framework for Large Three-Dimensional Topography Simulations Computer Physics Communications, 180 (2009), 8; S. 1242 - 1250. https://doi.org/10.1016/j.cpc.2009.02.002

343.		Reisinger, H., Vollertsen, R., Wagner, P.-J., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C.: A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides IEEE Transactions on Device and Materials Reliability, 9 (2009), 2; S. 106 - 114. https://doi.org/10.1109/TDMR.2009.2021389

342.		Orio, R., Ceric, H., Selberherr, S.: Analysis of Electromigration in Dual-Damascene Interconnect Structures Journal Integrated Circuits and Systems, 4 (2009), 2; S. 67 - 72. https://doi.org/10.29292/jics.v4i2.300

341.		Poschalko, C., Selberherr, S.: Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads IEEE Transactions on Electromagnetic Compatibility, 51 (2009), 1; S. 18 - 24. https://doi.org/10.1109/TEMC.2008.2008815

340.		Pourfath, M., Kosina, H.: Computational Study of Carbon-Based Electronics Journal of Computational Electronics, 8 (2009), 3-4; S. 427 - 440. https://doi.org/10.1007/s10825-009-0285-z

339.		Tyaginov, S. E., Vexler, M., Sokolov, N. S., Suturin, S. M., Banshchikov, A., Grasser, T., Meinerzhagen, B.: Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films Journal of Physics D: Applied Physics, 42 (2009), 115307; S. 1 - 6. https://doi.org/10.1088/0022-3727/42/11/115307

338.		Vexler, M., Sokolov, N. S., Suturin, S. M., Banshchikov, A., Tyaginov, S. E., Grasser, T.: Electrical Characterization and Modeling of the Au/CaF₂/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer Journal of Applied Physics, 105 (2009), 083716; S. 1 - 6. https://doi.org/10.1063/1.3110066

337.		Grasser, T., Kaczer, B.: Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs IEEE Transactions on Electron Devices, 56 (2009), 5; S. 1056 - 1062. https://doi.org/10.1109/TED.2009.2015160

336.		Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S.: GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; S. 505 - 520. https://doi.org/10.1080/17445760902758545

335.		Tyaginov, S. E., Sverdlov, V., Starkov, I., Gös, W., Grasser, T.: Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate Microelectronics Reliability, 49 (2009), S. 998 - 1002. https://doi.org/10.1016/j.microrel.2009.06.018

334.		Kaczer, B., Veloso, A., Roussel, Ph. J., Grasser, T., Groeseneken, G.: Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks Journal of Vacuum Science & Technology B, 27 (2009), 1; S. 459 - 462.

333.		Sverdlov, V., Windbacher, T., Schanovsky, F., Selberherr, S.: Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress Journal Integrated Circuits and Systems, 4 (2009), 2; S. 55 - 60. https://doi.org/10.29292/jics.v4i2.298

332.		Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S.: Modeling of Modern MOSFETs with Strain Journal of Computational Electronics (eingeladen), 8 (2009), 3-4; S. 192 - 208. https://doi.org/10.1007/s10825-009-0291-1

331.		Garcia-Barrientos, A., Grimalsky, V., Gutierrez-Dominguez, E., Palankovski, V.: Nonstationary Effects of the Space Charge in Semiconductor Structures Journal of Applied Physics, 105 (2009), S. 074501-1 - 074501-6. https://doi.org/10.1063/1.3093689

330.		Milovanovic, G., Baumgartner, O., Kosina, H.: On Open Boundary Conditions for Quantum Cascade Structures Optical and Quantum Electronics, 41 (2009), 11-13; S. 921 - 932. https://doi.org/10.1007/s11082-010-9406-y

329.		Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T.: On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress Microelectronics Reliability, 49 (2009), S. 1013 - 1017. https://doi.org/10.1016/j.microrel.2009.06.040

328.		Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S.: Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; S. 539 - 549. https://doi.org/10.1080/17445760902758552

327.		Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, Ph., Nelhiebel, M.: Understanding Negative Bias Temperature Instability in the Context of Hole Trapping Microelectronic Engineering (eingeladen), 86 (2009), 7-9; S. 1876 - 1882.

326.		Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T.: A 2D Non-Parabolic Six-Moments Model Solid-State Electronics, 52 (2008), S. 1606 - 1609. https://doi.org/10.1016/j.sse.2008.06.010

325.		Grasser, T., Wagner, P.-J., Hehenberger, Ph., Gös, W., Kaczer, B.: A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; S. 526 - 535. https://doi.org/10.1109/TDMR.2008.2002353

324.		Martens, K., Kaczer, B., Grasser, T., Jaeger, B., Meuris, M., Maes, H.E., Groeseneken, G.: Applicability of Charge Pumping on Germanium MOSFETs IEEE Electron Device Letters, 29 (2008), 12; S. 1364 - 1366. https://doi.org/10.1109/LED.2008.2007582

323.		Gös, W., Karner, M., Sverdlov, V., Grasser, T.: Charging and Discharging of Oxide Defects in Reliability Issues IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; S. 491 - 500. https://doi.org/10.1109/TDMR.2008.2005247

322.		Sverdlov, V., Kosina, H., Selberherr, S.: Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon Proceedings of SPIE, 7025 (2008), S. 70251I-1 - 70251I-8. https://doi.org/10.1117/12.802503

321.		Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: Current Transport Models for Nanoscale Semiconductor Devices Materials Science and Engineering R-Reports, 58 (2008), 6; S. 228 - 270. https://doi.org/10.1016/j.mser.2007.11.001

320.		Grasser, T., Gös, W., Kaczer, B.: Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models IEEE Transactions on Device and Materials Reliability (eingeladen), 8 (2008), 1; S. 79 - 97. https://doi.org/10.1109/TDMR.2007.912779

319.		Karlowatz, G., Wessner, W., Kosina, H.: Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation Mathematics and Computers in Simulation, 79 (2008), S. 972 - 979. https://doi.org/10.1016/j.matcom.2008.02.021

318.		Orio, R., Ceric, H., Selberherr, S.: Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress Journal of Computational Electronics, 7 (2008), 3; S. 128 - 131. https://doi.org/10.1007/s10825-008-0211-9

317.		Sverdlov, V., Kosina, H., Selberherr, S.: Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory Journal of Computational Electronics, 7 (2008), 3; S. 164 - 167. https://doi.org/10.1007/s10825-008-0177-7

316.		Sverdlov, V., Selberherr, S.: Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond Solid-State Electronics, 52 (2008), 12; S. 1861 - 1866. https://doi.org/10.1016/j.sse.2008.06.054

315.		Pourfath, M., Kosina, H.: Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets Journal of Computational and Theoretical Nanoscience, 5 (2008), 6; S. 1128 - 1137. https://doi.org/10.1166/jctn.2008.011

314.		Lenahan, P., Knowlton, B., Conley, J., Tonti, B., Suehle, J., Grasser, T.: Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop IEEE Transactions on Device and Materials Reliability, 8 (2008), 3; S. 490.

313.		Raleva, K., Vasileska, D., Goodnick, S.M., Nedjalkov, M.: Modeling Thermal Effects in Nanodevices IEEE Transactions on Electron Devices, 55 (2008), 6; S. 1306 - 1316.

312.		Vainshtein, S., Yuferev, V., Palankovski, V., Ong, D., Kostamovaara, J.: Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison between an Experiment and Simulations Applied Physics Letters, 92 (2008), S. 062114-1 - 062114-3. https://doi.org/10.1063/1.2870096

311.		Vitanov, S., Palankovski, V.: Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study Solid-State Electronics, 52 (2008), 11; S. 1791 - 1795. https://doi.org/10.1016/j.sse.2008.07.011

310.		Pourfath, M., Kosina, H., Selberherr, S.: Numerical Study of Quantum Transport in Carbon Nanotube Transistors Mathematics and Computers in Simulation, 79 (2008), 4; S. 1051 - 1059. https://doi.org/10.1016/j.matcom.2007.09.004

309.		Aichinger, T., Nelhiebel, M., Grasser, T.: On the Temperature Dependence of NBTI Recovery Microelectronics Reliability, 48 (2008), S. 1178 - 1184. https://doi.org/10.1016/j.microrel.2008.06.018

308.		Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T.: Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs Journal of Computational Electronics, 7 (2008), 3; S. 168 - 173. https://doi.org/10.1007/s10825-008-0239-x

307.		Nedjalkov, M., Vasileska, D.: Semi-Discrete 2D Wigner-Particle Approach Journal of Computational Electronics, 7 (2008), 3; S. 222 - 225. https://doi.org/10.1007/s10825-008-0197-3

306.		Pourfath, M., Kosina, H., Selberherr, S.: The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance Journal of Physics: Conference Series, 109 (2008), 012029; S. 1 - 5. https://doi.org/10.1088/1742-6596/109/1/012029

305.		Ungersböck, E., Gös, W., Dhar, S., Kosina, H., Selberherr, S.: The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon Mathematics and Computers in Simulation, 79 (2008), 4; S. 1071 - 1077. https://doi.org/10.1016/j.matcom.2007.10.004

304.		Cervenka, J., Ceric, H., Selberherr, S.: Three-Dimensional Simulation of Sacrificial Etching Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14 (2008), 4-5; S. 665 - 671. https://doi.org/10.1007/s00542-007-0491-1

303.		Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S.: Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility Solid-State Electronics, 52 (2008), 10; S. 1563 - 1568. https://doi.org/10.1016/j.sse.2008.06.019

302.		Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Gös, W., Vasicek, M., Baumgartner, O., Kernstock, Ch., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S.: A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications Journal of Computational Electronics, 6 (2007), 1-3; S. 179 - 182. https://doi.org/10.1007/s10825-006-0077-7

301.		Wittmann, R., Selberherr, S.: A Study of Ion Implantation into Crystalline Germanium Solid-State Electronics, 51 (2007), 6; S. 982 - 988. https://doi.org/10.1016/j.sse.2007.03.019

300.		Movahhedi, M., Abdipour, A., Nentchev, A., Dehghan, M., Selberherr, S.: Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method IEEE Transactions on Microwave Theory and Techniques, 55 (2007), 6; S. 1322 - 1331. https://doi.org/10.1109/TMTT.2007.897777

299.		Li, L., Meller, G., Kosina, H.: Analytical Conductivity Model for Doped Organic Semiconductors Journal of Applied Physics, 101 (2007), 033716; S. 1 - 4. https://doi.org/10.1063/1.2472282

298.		Li, L., Meller, G., Kosina, H.: Carrier Concentration Dependence of the Mobility in Organic Semiconductors Synthetic Metals, 157 (2007), S. 243 - 246. https://doi.org/10.1016/j.synthmet.2007.03.002

297.		Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T., Selberherr, S.: Comparison of Deposition Models for a TEOS LPCVD Process Microelectronics Reliability, 47 (2007), 4-5; S. 623 - 625. https://doi.org/10.1016/j.microrel.2007.01.058

296.		Palestri, P., Barin, N., Brunel, D., Busseret, C., Campera, A., Childs, P., Driussi, F., Fiegna, C., Fiori, G., Gusmeroli, R., Iannaccone, G., Karner, M., Kosina, H., Langer, E., Majkusiak, C., Monzio Compagnoni, C., Poncet, A., Sangiorgi, E., Selmi, L., Spinelli, A., Walczak, J.: Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks IEEE Transactions on Electron Devices, 54 (2007), 1; S. 106 - 114. https://doi.org/10.1109/TED.2006.887226

295.		Li, L., Meller, G., Kosina, H.: Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes Applied Physics Letters, 91 (2007), 17; S. 1 - 3. https://doi.org/10.1063/1.2801702

294.		Spevak, M., Grasser, T.: Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26 (2007), 8; S. 1408 - 1416.

293.		Pourfath, M., Kosina, H., Selberherr, S.: Dissipative Transport in CNTFETs Journal of Computational Electronics, 6 (2007), 1-3; S. 321 - 324. https://doi.org/10.1007/s10825-006-0113-7

292.		Dhar, S., Ungersböck, E., Kosina, H., Grasser, T., Selberherr, S.: Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass IEEE Transactions on Nanotechnology, 6 (2007), 1; S. 97 - 100. https://doi.org/10.1109/TNANO.2006.888533

291.		Heitzinger, C., Ringhofer, Ch., Selberherr, S.: Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities Communications in Mathematical Sciences, 5 (2007), 4; S. 779 - 788. https://doi.org/10.4310/CMS.2007.v5.n4.a2

290.		Pourfath, M., Kosina, H., Selberherr, S.: Geometry Optimization for Carbon Nanotube Transistors Solid-State Electronics, 51 (2007), 11-12; S. 1565 - 1571. https://doi.org/10.1016/j.sse.2007.09.021

289.		Krishnamohan, T., Jungemann, C., Kim, D., Ungersböck, E., Selberherr, S., -T Pham, A., Meinerzhagen, B., Wong, P., Nishida, Y., Saraswat, K.: High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs Microelectronic Engineering, 84 (2007), 9-10; S. 2063 - 2066. https://doi.org/10.1016/j.mee.2007.04.085

288.		Li, L., Meller, G., Kosina, H.: Influence of Traps on Charge Transport in Organic Semiconductors Solid-State Electronics, 51 (2007), S. 445 - 448. https://doi.org/10.1016/j.sse.2007.01.024

287.		Span, G., Wagner, M., Grasser, T., Holmgren, L.: Miniaturized TEG with Thermal Generation of Free Carriers Physica Status Solidi - Rapid Research Letters, 1 (2007), 6; S. 241 - 243. https://doi.org/10.1002/pssr.200701171

286.		Nedjalkov, M., Vasileska, D., Dimov, I., Arsov, G.: Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices Monte Carlo Methods and Applications, 13 (2007), 4; S. 299 - 331. https://doi.org/10.1515/MCMA.2007.017

285.		Grasser, T., Selberherr, S.: Modeling of Negative Bias Temperature Instability Journal of Telecommunications and Information Technology (eingeladen), 7 (2007), 2; S. 92 - 102.

284.		Kosina, H.: Nanoelectronic Device Simulation Based on the Wigner Function Formalism International Journal of High Speed Electronics and Systems, 17 (2007), 3; S. 475 - 484. https://doi.org/10.1142/S0129156407004667

283.		Entner, R., Grasser, T., Triebl, O., Enichlmair, H., Minixhofer, R.: Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures Microelectronics Reliability, 47 (2007), 4-5; S. 697 - 699.

282.		Movahhedi, M., Abdipour, A., Ceric, H., Sheikholeslami, A., Selberherr, S.: Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method IEEE Microwave and Wireless Components Letters, 17 (2007), 1; S. 10 - 12. https://doi.org/10.1109/LMWC.2006.887240

281.		Ungersböck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S.: Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon Journal of Computational Electronics, 6 (2007), 1-3; S. 55 - 58. https://doi.org/10.1007/s10825-006-0047-0

280.		Sheikholeslami, A., Parhami, F., Puchner, H., Selberherr, S.: Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers Journal of Physics: Conference Series, 61 (2007), S. 1051 - 1055. https://doi.org/10.1088/1742-6596/61/1/208

279.		Wagner, M., Karner, M., Cervenka, J., Vasicek, M., Kosina, H., Holzer, S., Grasser, T.: Quantum Correction for DG MOSFETs Journal of Computational Electronics, 5 (2007), S. 397 - 400. https://doi.org/10.1007/s10825-006-0032-7

278.		Ungersböck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S.: The Effect of General Strain on the Band Structure and Electron Mobility of Silicon IEEE Transactions on Electron Devices, 54 (2007), 9; S. 2183 - 2190. https://doi.org/10.1109/TED.2007.902880

277.		Pourfath, M., Kosina, H.: The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors Nanotechnology, 18 (2007), 42; S. 424036 - 424041. https://doi.org/10.1088/0957-4484/18/42/424036

276.		Sverdlov, V., Ungersböck, E., Kosina, H.: Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain IEEE Transactions on Nanotechnology, 6 (2007), 3; S. 334 - 340. https://doi.org/10.1109/TNANO.2007.894835

275.		Wagner, M., Span, G., Holzer, S., Grasser, T.: Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content Semiconductor Science and Technology, 22 (2007), S. 173 - 176.

274.		Cervenka, J., Ceric, H., Selberherr, S.: Three-Dimensional Simulation of Sacrificial Etching Proceedings of SPIE, 6589 (2007), S. 452 - 460. https://doi.org/10.1117/12.721979

273.		Pourfath, M., Kosina, H., Selberherr, S.: Tunneling CNTFETs Journal of Computational Electronics, 6 (2007), 1-3; S. 243 - 246. https://doi.org/10.1007/s10825-006-0099-1

272.		Nedjalkov, M., Vasileska, D., Atanassov, E., Palankovski, V.: Ultrafast Wigner Transport in Quantum Wires Journal of Computational Electronics, 6 (2007), S. 235 - 238. https://doi.org/10.1007/s10825-006-0101-y

271.		Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S.: VSP - A Gate Stack Analyzer Microelectronics Reliability, 47 (2007), 4-5; S. 704 - 708. https://doi.org/10.1016/j.microrel.2007.01.059

270.		Triebl, O., Grasser, T.: Vector Discretization Schemes in Technology CAD Environments Romanian Journal of Information Science and Technology, 10 (2007), 2; S. 167 - 176.

269.		Sverdlov, V., Ungersböck, E., Kosina, H., Selberherr, S.: Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations Solid-State Electronics, 51 (2007), 2; S. 299 - 305. https://doi.org/10.1016/j.sse.2007.01.022

268.		Pourfath, M., Kosina, H., Selberherr, S.: A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors Journal of Computational Electronics, 5 (2006), 2-3; S. 155 - 159. https://doi.org/10.1007/s10825-006-8836-z

267.		Kinkhabwala, Y., Sverdlov, V., Likharev, K.: A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport Journal of Physics: Condensed Matter, 18 (2006), S. 2013 - 2027.

266.		Kinkhabwala, Y., Sverdlov, V., Korotkov, A.N., Likharev, K.: A Numerical Study of Transport and Shot Noise in 2D Hopping Journal of Physics: Condensed Matter, 18 (2006), S. 1999 - 2012.

265.		Wessner, W., Cervenka, J., Heitzinger, C., Hössinger, A., Selberherr, S.: Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25 (2006), 10; S. 2129 - 2139. https://doi.org/10.1109/TCAD.2005.862750

264.		Kosina, H., Selberherr, S.: Device Simulation Demands of Upcoming Microelectronic Devices International Journal of High Speed Electronics and Systems, 16 (2006), 1; S. 115 - 136. https://doi.org/10.1142/S0129156406003576

263.		Karner, M., Gehring, A., Kosina, H.: Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics Journal of Computational Electronics, 5 (2006), S. 161 - 165. https://doi.org/10.1007/s10825-006-8837-y

262.		Cervenka, J., Wessner, W., Al-Ani, E., Grasser, T., Selberherr, S.: Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25 (2006), 10; S. 2118 - 2128. https://doi.org/10.1109/TCAD.2006.876514

261.		Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, E., Grasser, T., Selberherr, S.: High-Field Electron Mobility Model for Strained-Silicon Devices IEEE Transactions on Electron Devices, 53 (2006), 12; S. 3054 - 3062. https://doi.org/10.1109/TED.2006.885639

260.		Sverdlov, V., Kosina, H., Selberherr, S.: Modeling Current Transport in Ultra-Scaled Field-Effect Transistors Microelectronics Reliability (eingeladen), 47 (2006), 1; S. 11 - 19. https://doi.org/10.1016/j.microrel.2006.03.009

259.		Ungersböck, E., Kosina, H.: Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers Journal of Computational Electronics, 5 (2006), 2-3; S. 79 - 83. https://doi.org/10.1007/s10825-006-8823-4

258.		Pourfath, M., Kosina, H., Selberherr, S.: Rigorous Modeling of Carbon Nanotube Transistors Journal of Physics: Conference Series, 38 (2006), S. 29 - 32. https://doi.org/10.1088/1742-6596/38/1/008

257.		Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S.: Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices Journal of Computational Electronics, 5 (2006), 4; S. 447 - 450. https://doi.org/10.1007/s10825-006-0041-6

256.		Meller, G., Li, L., Holzer, S., Kosina, H.: Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems Optical and Quantum Electronics, 38 (2006), 12-14; S. 993 - 1004. https://doi.org/10.1007/s11082-006-9051-7

255.		Li, L., Meller, G., Kosina, H.: Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors Microelectronics Journal, 38 (2006), 1; S. 47 - 51. https://doi.org/10.1016/j.mejo.2006.09.022

254.		Nedjalkov, M., Vasileska, D., Ferry, D.K., Jacoboni, C., Ringhofer, Ch., Dimov, I., Palankovski, V.: Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires Physical Review B, 74 (2006), 3; S. 035311-1 - 035311-18. https://doi.org/10.1103/PhysRevB.74.035311

253.		Kosina, H.: Wigner function approach to nano device simulation International Journal of Computational Science and Engineering, 2 (2006), 3/4; S. 100 - 118. https://doi.org/10.1504/IJCSE.2006.012762

252.		Heitzinger, C., Sheikholeslami, A., Park, J.M., Selberherr, S.: A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24 (2005), 10; S. 1485 - 1491. https://doi.org/10.1109/TCAD.2005.852297

251.		Wagner, S., Grasser, T., Fischer, C., Selberherr, S.: An Advanced Equation Assembly Module Engineering with Computers, 21 (2005), 2; S. 151 - 163. https://doi.org/10.1007/s00366-005-0319-5

250.		Dhar, S., Kosina, H., Palankovski, V., Ungersböck, E., Selberherr, S.: Electron Mobility Model for Strained-Si Devices IEEE Transactions on Electron Devices, 52 (2005), 4; S. 527 - 533. https://doi.org/10.1109/TED.2005.844788

249.		Jungemann, C., Grasser, T., Neinhüs, B., Meinerzhagen, B.: Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium IEEE Transactions on Electron Devices, 52 (2005), 11; S. 2404 - 2408.

248.		Gehring, A., Selberherr, S.: Gate Current Modeling for MOSFETs Journal of Computational and Theoretical Nanoscience (eingeladen), 2 (2005), 1; S. 26 - 44. https://doi.org/10.1166/jctn.2005.002

247.		Castro, L.C., John, D.L., Pulfrey, D.L., Pourfath, M., Gehring, A., Kosina, H.: Method for Predicting f_T for Carbon Nanotube FETs IEEE Transactions on Nanotechnology, Vol. 4 (2005), 6; S. 699 - 704. https://doi.org/10.1109/TNANO.2005.858603

246.		Ayalew, T., Grasser, T., Kosina, H., Selberherr, S.: Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices Materials Science Forum, 483-485 (2005), S. 845 - 848. https://doi.org/10.4028/www.scientific.net/MSF.483-485.845

245.		Grasser, T.: Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation Physica A: Statistical Mechanics and its Applications, 349 (2005), S. 221 - 258.

244.		Grasser, T., Kosik, R., Jungemann, C., Kosina, H., Selberherr, S.: Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data Journal of Applied Physics, 97 (2005), 9; S. 093710-1 - 093710-12. https://doi.org/10.1063/1.1883311

243.		Pourfath, M., Ungersböck, E., Gehring, A., Kosina, H., Selberherr, S., Park, W.J., Cheong, B.-H.: Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors Journal of Computational Electronics, 4 (2005), 1-2; S. 75 - 78. https://doi.org/10.1007/s10825-005-7111-z

242.		Ayalew, T., Kim, S.-C., Grasser, T., Selberherr, S.: Numerical Analysis of SiC Merged PiN Schottky Diodes Materials Science Forum, 483-485 (2005), S. 949 - 952. https://doi.org/10.4028/www.scientific.net/MSF.483-485.949

241.		Kim, S.-C., Bahng, W., Kim, N.-K., Kim, E.-D., Ayalew, T., Grasser, T., Selberherr, S.: Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication Materials Science Forum, 483-485 (2005), S. 793 - 796. https://doi.org/10.4028/www.scientific.net/MSF.483-485.793

240.		Pourfath, M., Ungersböck, E., Gehring, A., Cheong, B.-H., Park, W.J., Kosina, H., Selberherr, S.: Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors Microelectronic Engineering, 81 (2005), 2-4; S. 428 - 433. https://doi.org/10.1016/j.mee.2005.03.043

239.		Ungersböck, E., Pourfath, M., Kosina, H., Gehring, A., Cheong, B.-H., Park, W.J., Selberherr, S.: Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors IEEE Transactions on Nanotechnology, 4 (2005), 5; S. 533 - 538. https://doi.org/10.1109/TNANO.2005.851402

238.		Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S.: Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach Solid-State Electronics, 49 (2005), 9; S. 1510 - 1515. https://doi.org/10.1016/j.sse.2005.07.013

237.		Pourfath, M., Gehring, A., Ungersböck, E., Kosina, H., Selberherr, S., Cheong, B.-H., Park, W.: Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors Journal of Applied Physics, 97 (2005), 10; S. 106103-1 - 106103-3. https://doi.org/10.1063/1.1897491

236.		Holzer, S., Hollauer, Ch., Ceric, H., Wagner, S., Langer, E., Grasser, T., Selberherr, S.: Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress Proceedings of SPIE, 5837 (2005), S. 380 - 387. https://doi.org/10.1117/12.608414

235.		Gehring, A., Kosina, H.: Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method Journal of Computational Electronics, 4 (2005), 1-2; S. 67 - 70.

234.		Grasser, T., Kosik, R., Jungemann, C., Meinerzhagen, B., Kosina, H., Selberherr, S.: A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices Journal of Computational Electronics, 3 (2004), 3-4; S. 183 - 187. https://doi.org/10.1007/s10825-004-7041-1

233.		Heitzinger, C., Ringhofer, Ch.: A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation Journal of Computational Electronics, 3 (2004), 1; S. 33 - 44.

232.		Nedjalkov, M., Kosina, H., Ungersböck, E., Selberherr, S.: A Quasi-Particle Model of the Electron-Wigner Potential Interaction Semiconductor Science and Technology, 19 (2004), 4; S. 226 - 228. https://doi.org/10.1088/0268-1242/19/4/076

231.		Nedjalkov, M., Ahmed, S., Vasileska, D.: A Self-Consistent Event Biasing Scheme for Statistical Enhancement Journal of Computational Electronics, 3 (2004), 3-4; S. 305 - 309.

230.		Binder, T., Heitzinger, C., Selberherr, S.: A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23 (2004), 6; S. 814 - 822. https://doi.org/10.1109/TCAD.2004.828130

229.		Heitzinger, C., Hössinger, A., Selberherr, S.: An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results Mathematics and Computers in Simulation, 66 (2004), 2-3; S. 219 - 230. https://doi.org/10.1016/j.matcom.2003.11.010

228.		Rodriguez-Torres, R., Gutierrez, E., Klima, R., Selberherr, S.: Analysis of Split-Drain MAGFETs IEEE Transactions on Electron Devices, 51 (2004), 12; S. 2237 - 2245. https://doi.org/10.1109/TED.2004.839869

227.		Palankovski, V., Selberherr, S.: Critical Modeling Issues of SiGe Semiconductor Devices Journal of Telecommunications and Information Technology (eingeladen), 4 (2004), 1; S. 15 - 25.

226.		Wagner, S., Palankovski, V., Röhrer, G., Grasser, T., Selberherr, S.: Direct Extraction Feature for Scattering Parameters of SiGe-HBTs Applied Surface Science, 224 (2004), 1-4; S. 365 - 369. https://doi.org/10.1016/j.apsusc.2003.09.035

225.		Ayalew, T., Gehring, A., Grasser, T., Selberherr, S.: Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination Microelectronics Reliability, 44 (2004), 9-11; S. 1473 - 1478. https://doi.org/10.1016/j.microrel.2004.07.042

224.		Gehring, A., Selberherr, S.: Evolution of Current Transport Models for Engineering Applications Journal of Computational Electronics, 3 (2004), 3-4; S. 149 - 155. https://doi.org/10.1007/s10825-004-7035-z

223.		Holzer, S., Minixhofer, R., Heitzinger, C., Fellner, J., Grasser, T., Selberherr, S.: Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures Microelectronics Journal, 35 (2004), 10; S. 805 - 810. https://doi.org/10.1016/j.mejo.2004.06.011

222.		Heitzinger, C., Sheikholeslami, A., Badrieh, F., Puchner, H., Selberherr, S.: Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process IEEE Transactions on Electron Devices, 51 (2004), 7; S. 1129 - 1134. https://doi.org/10.1109/TED.2004.829868

221.		Park, J.M., Klima, R., Selberherr, S.: High-Voltage Lateral Trench Gate SOI-LDMOSFETs Microelectronics Journal, 35 (2004), 3; S. 299 - 304. https://doi.org/10.1016/S0026-2692(03)00192-7

220.		Gehring, A., Selberherr, S.: Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices IEEE Transactions on Device and Materials Reliability, 4 (2004), 3; S. 306 - 319. https://doi.org/10.1109/TDMR.2004.836727

219.		Smirnov, S., Kosina, H.: Monte Carlo Modeling of the Electron Mobility in Strained Si_1-xGe_x Layers on Arbitrarily Oriented Si_1-yGe_y Substrates Solid-State Electronics (eingeladen), 48 (2004), S. 1325 - 1335. https://doi.org/10.1016/j.sse.2004.01.014

218.		Park, J.M., Wagner, S., Grasser, T., Selberherr, S.: New SOI Lateral Power Devices with Trench Oxide Solid-State Electronics, 48 (2004), 6; S. 1007 - 1015. https://doi.org/10.1016/j.sse.2003.12.015

217.		Heitzinger, C., Selberherr, S.: On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem Microelectronics Journal, 35 (2004), 2; S. 167 - 171. https://doi.org/10.1016/j.mejo.2003.09.014

216.		Nedjalkov, M., Atanassov, E., Kosina, H., Selberherr, S.: Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation Monte Carlo Methods and Applications, 10 (2004), 3-4; S. 461 - 468. https://doi.org/10.1515/mcma.2004.10.3-4.461

215.		Palankovski, V., Röhrer, G., Grasser, T., Smirnov, S., Kosina, H., Selberherr, S.: Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs Applied Surface Science, 224 (2004), 1-4; S. 361 - 364. https://doi.org/10.1016/j.apsusc.2003.09.034

214.		Palankovski, V., Selberherr, S.: Rigorous Modeling of High-Speed Semiconductor Devices Microelectronics Reliability (eingeladen), 44 (2004), 6; S. 889 - 897. https://doi.org/10.1016/j.microrel.2004.02.009

213.		Ringhofer, Ch., Nedjalkov, M., Kosina, H., Selberherr, S.: Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule SIAM Journal on Applied Mathematics, 64 (2004), 6; S. 1933 - 1953. https://doi.org/10.1137/S0036139903428914

212.		Kosina, H., Nedjalkov, M., Selberherr, S.: Solution of the Space-dependent Wigner Equation Using a Particle Model Monte Carlo Methods and Applications, 10 (2004), 3-4; S. 359 - 368. https://doi.org/10.1515/mcma.2004.10.3-4.359

211.		Gehring, A., Selberherr, S.: Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown Microelectronics Reliability, 44 (2004), 9-11; S. 1879 - 1884. https://doi.org/10.1016/j.microrel.2004.07.101

210.		Palankovski, V., Selberherr, S.: The State-of-the-Art in Simulation for Optimization of SiGe-HBTs Applied Surface Science, 224 (2004), 1-4; S. 312 - 319. https://doi.org/10.1016/j.apsusc.2003.09.036

209.		Nedjalkov, M., Kosina, H., Selberherr, S., Ringhofer, Ch., Ferry, D.K.: Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices Physical Review B, 70 (2004), 115319; S. 1 - 16. https://doi.org/10.1103/PhysRevB.70.115319

208.		Kosina, H., Nedjalkov, M., Selberherr, S.: A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations Journal of Computational Electronics, 2 (2003), 2-4; S. 147 - 151. https://doi.org/10.1023/B:JCEL.0000011416.93047.69

207.		Park, J.M., Grasser, T., Kosina, H., Selberherr, S.: A Numerical Study of Partial-SOI LDMOSFETs Solid-State Electronics, 47 (2003), 2; S. 275 - 281. https://doi.org/10.1016/S0038-1101(02)00207-1

206.		Grasser, T., Tang, T.-W., Kosina, H., Selberherr, S.: A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation Proceedings of the IEEE, 91 (2003), 2; S. 251 - 274. https://doi.org/10.1109/JPROC.2002.808150

205.		Ceric, H., Selberherr, S.: An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration IEICE Transactions on Electronics (eingeladen), E86-C (2003), 3; S. 421 - 426.

204.		Kosina, H., Nedjalkov, M., Selberherr, S.: An Event Bias Technique for Monte Carlo Device Simulation Mathematics and Computers in Simulation, 62 (2003), 3-6; S. 367 - 375. https://doi.org/10.1016/S0378-4754(02)00245-8

203.		Gehring, A., Kosina, H., Selberherr, S.: Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method Journal of Computational Electronics, 2 (2003), 2-4; S. 219 - 223. https://doi.org/10.1023/B:JCEL.0000011428.85286.7d

202.		Harlander, C., Sabelka, R., Selberherr, S.: Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method Microelectronics Journal, 34 (2003), 9; S. 815 - 821. https://doi.org/10.1016/S0026-2692(03)00147-2

201.		Gehring, A., Grasser, T., Kosina, H., Selberherr, S.: Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution Electronics Letters, 39 (2003), 8; S. 691 - 692. https://doi.org/10.1049/el:20030440

200.		Grasser, T., Kosina, H., Selberherr, S.: Hot Carrier Effects within Macroscopic Transport Models International Journal of High Speed Electronics and Systems, 13 (2003), 3; S. 873 - 901. https://doi.org/10.1142/S012915640300206X

199.		Ayalew, T., Gehring, A., Park, J.M., Grasser, T., Selberherr, S.: Improving SiC Lateral DMOSFET Reliability under High Field Stress Microelectronics Reliability, 43 (2003), 9-11; S. 1889 - 1894. https://doi.org/10.1016/S0026-2714(03)00321-4

198.		Smirnov, S., Kosina, H., Selberherr, S.: Investigation of the Electron Mobility in Strained Si_1-x Ge_x at High Ge Composition IEICE Transactions on Electronics, E86-C (2003), 3; S. 350 - 356.

197.		Gehring, A., Jimenez-Molinos, F., Kosina, H., Palma, A., Gamiz, F., Selberherr, S.: Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices Microelectronics Reliability, 43 (2003), 9-11; S. 1495 - 1500. https://doi.org/10.1016/S0026-2714(03)00265-8

196.		Nedjalkov, M., Kosina, H., Selberherr, S.: Monte Carlo Algorithms for Stationary Device Simulation Mathematics and Computers in Simulation, 62 (2003), 3-6; S. 453 - 461. https://doi.org/10.1016/S0378-4754(02)00246-X

195.		Smirnov, S., Kosina, H., Nedjalkov, M., Selberherr, S.: Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle Journal of Applied Physics, 94 (2003), 9; S. 5791 - 5799. https://doi.org/10.1063/1.1616982

194.		Borzdov, V. M., Galenchik, V. O., Kosina, H., Komarov, F. F., Zhevnyak, O. G.: Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers Physics of Low-dimensional Structures, 5-6 (2003), S. 99 - 108.

193.		Heitzinger, C., Hössinger, A., Selberherr, S.: On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 7; S. 879 - 883. https://doi.org/10.1109/TCAD.2003.814259

192.		Kosina, H., Nedjalkov, M.: Particle Models for Device Simulation International Journal of High Speed Electronics and Systems (eingeladen), 13 (2003), 13; S. 727 - 769.

191.		Binder, T., Hössinger, A., Selberherr, S.: Rigorous Integration of Semiconductor Process and Device Simulators IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 9; S. 1204 - 1214. https://doi.org/10.1109/TCAD.2003.816219

190.		Heitzinger, C., Pyka, W., Tamaoki, N., Takase, T., Ohmine, T., Selberherr, S.: Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 3; S. 285 - 292. https://doi.org/10.1109/TCAD.2002.807879

189.		Sheikholeslami, A., Heitzinger, C., Puchner, H., Badrieh, F., Selberherr, S.: Simulation of Void Formation in Interconnect Lines Proceedings of SPIE, 5117 (2003), S. 445 - 452. https://doi.org/10.1117/12.498783

188.		Nedjalkov, M., Kosina, H., Selberherr, S.: Stochastic Interpretation of the Wigner Transport in Nanostructures Microelectronics Journal, 34 (2003), 5-8; S. 443 - 445. https://doi.org/10.1016/S0026-2692(03)00069-7

187.		Kosina, H., Nedjalkov, M., Selberherr, S.: The Stationary Monte Carlo Method for Device Simulation. I. Theory Journal of Applied Physics, 93 (2003), 6; S. 3553 - 3563. https://doi.org/10.1063/1.1544654

186.		Nedjalkov, M., Kosina, H., Selberherr, S.: The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation Journal of Applied Physics, 93 (2003), 6; S. 3564 - 3571. https://doi.org/10.1063/1.1544655

185.		Cervenka, J., Klima, R., Knaipp, M., Selberherr, S.: Three-Dimensional Device Optimization by Green's Functions European Physical Journal - Applied Physics, 21 (2003), S. 103 - 106. https://doi.org/10.1051/epjap:2002121

184.		Nedjalkov, M., Kosina, H., Kosik, R., Selberherr, S.: A Space Dependent Wigner Equation Including Phonon Interaction Journal of Computational Electronics, 1 (2002), 1-2; S. 27 - 31. https://doi.org/10.1023/A:1020799224110

183.		Nedjalkov, M., Kosina, H., Kosik, R., Selberherr, S.: A Wigner Equation with Quantum Electron-Phonon Interaction Microelectronic Engineering, 63 (2002), 1-3; S. 199 - 203. https://doi.org/10.1016/S0167-9317(02)00625-1

182.		Grasser, T., Kosina, H., Heitzinger, C., Selberherr, S.: Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations Applied Physics Letters, 80 (2002), 4; S. 613 - 615. https://doi.org/10.1063/1.1445273

181.		Heitzinger, C., Selberherr, S.: An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers Microelectronics Journal, 33 (2002), 1-2; S. 61 - 68. https://doi.org/10.1016/S0026-2692(01)00105-7

180.		Kosina, H., Gritsch, M., Grasser, T., Selberherr, S., Linton, T., Yu, S., Giles, M.: An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs Journal of Computational Electronics, 1 (2002), 3; S. 371 - 374. https://doi.org/10.1023/A:1020703709031

179.		Grasser, T., Kosina, H., Heitzinger, C., Selberherr, S.: Characterization of the Hot Electron Distribution Function Using Six Moments Journal of Applied Physics, 91 (2002), 6; S. 3869 - 3879. https://doi.org/10.1063/1.1450257

178.		Gehring, A., Grasser, T., Cheong, B.-H., Selberherr, S.: Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method Solid-State Electronics, 46 (2002), 10; S. 1545 - 1551. https://doi.org/10.1016/S0038-1101(02)00103-X

177.		Grasser, T., Selberherr, S.: Electro-Thermal Effects in Mixed-Mode Device Simulation Romanian Journal of Information Science and Technology, 5 (2002), 4; S. 339 - 354.

176.		Gurov, T.V., Nedjalkov, M., Whitlock, P.A., Kosina, H., Selberherr, S.: Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field Physica B: Condensed Matter, 314 (2002), 1-4; S. 301 - 304. https://doi.org/10.1016/S0921-4526(01)01417-X

175.		Grasser, T., Kosina, H., Selberherr, S.: Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues Wisnik (eingeladen), 444 (2002), S. 28 - 41.

174.		Grasser, T., Kosina, H., Selberherr, S.: Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models Wisnik (eingeladen), 444 (2002), S. 18 - 27.

173.		Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: Revision of the Standard Hydrodynamic Transport Model for SOI Simulation IEEE Transactions on Electron Devices, 49 (2002), 10; S. 1814 - 1820. https://doi.org/10.1109/TED.2002.803645

172.		Gehring, A., Grasser, T., Kosina, H., Selberherr, S.: Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function Journal of Applied Physics, 92 (2002), 10; S. 6019 - 6027. https://doi.org/10.1063/1.1516617

171.		Ceric, H., Selberherr, S.: Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution Microelectronics Reliability, 42 (2002), 9-11; S. 1457 - 1460. https://doi.org/10.1016/S0026-2714(02)00169-5

170.		Grasser, T., Selberherr, S.: Technology CAD: Device Simulation and Characterization Journal of Vacuum Science & Technology B, 20 (2002), 1; S. 407 - 413. https://doi.org/10.1116/1.1445162

169.		Nedjalkov, M., Grasser, T., Kosina, H., Selberherr, S.: Transient Model for Terminal Current Noise Applied Physics Letters, 80 (2002), 4; S. 607 - 609. https://doi.org/10.1063/1.1447002

168.		Nedjalkov, M., Kosina, H., Selberherr, S., Dimov, I.: A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors VLSI Design, 13 (2001), 1-4; S. 405 - 411. https://doi.org/10.1155/2001/54247

167.		Sabelka, R., Selberherr, S.: A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures Microelectronics Journal, 32 (2001), 2; S. 163 - 171. https://doi.org/10.1016/S0026-2692(00)00113-0

166.		Palankovski, V., Belova, N., Grasser, T., Puchner, H., Aronowitz, S., Selberherr, S.: A Methodology for Deep Sub-0.25µm CMOS Technology Prediction IEEE Transactions on Electron Devices, 48 (2001), 10; S. 2331 - 2336. https://doi.org/10.1109/16.954473

165.		Fahringer, T., Blaha, P., Hössinger, A., Luitz, J., Mehofer, E., Moritsch, H., Scholz, B.: Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures Concurrency and Computation: Practice and Experience, 13 (2001), 10; S. 1 - 17.

164.		Palankovski, V., Schultheis, R., Bonacina, A., Selberherr, S.: Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors Radiation Effects and Defects in Solids, 156 (2001), 1-4; S. 261 - 265. https://doi.org/10.1080/10420150108216903

163.		Grasser, T., Selberherr, S.: Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits IEEE Transactions on Electron Devices, 48 (2001), 7; S. 1421 - 1427. https://doi.org/10.1109/16.930661

162.		Gamiz, F., Roldan, J., Kosina, H., Grasser, T.: Improving Strained-Si on Si_1-xGe_x Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile IEEE Transactions on Electron Devices, 48 (2001), 9; S. 1878 - 1884.

161.		Palankovski, V., Quay, R., Selberherr, S.: Industrial Application of Heterostructure Device Simulation IEEE Journal of Solid-State Circuits (eingeladen), 36 (2001), 9; S. 1365 - 1370. https://doi.org/10.1109/4.944664

160.		Gritsch, M., Kosina, H., Grasser, T., Selberherr, S.: Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs Solid-State Electronics, 45 (2001), 5; S. 621 - 627. https://doi.org/10.1016/S0038-1101(01)00080-6

159.		Grasser, T., Kosina, H., Selberherr, S.: Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling Journal of Applied Physics, 90 (2001), 12; S. 6165 - 6171. https://doi.org/10.1063/1.1415366

158.		Grasser, T., Kosina, H., Selberherr, S.: Investigation of Spurious Velocity Overshoot Using Monte Carlo Data Applied Physics Letters, 79 (2001), 12; S. 1900 - 1902. https://doi.org/10.1063/1.1405000

157.		Palankovski, V., Selberherr, S.: Micro Materials Modeling in MINIMOS-NT Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7 (2001), 4; S. 183 - 187. https://doi.org/10.1007/s005420000076

156.		Quay, R., Hess, K., Reuter, R., Schlechtweg, M., Grave, T., Palankovski, V., Selberherr, S.: Nonlinear Electronic Transport and Device Performance of HEMTs IEEE Transactions on Electron Devices, 48 (2001), 2; S. 210 - 217. https://doi.org/10.1109/16.902718

155.		Dragosits, K., Selberherr, S.: Simulation of Ferroelectric Thin Films Radiation Effects and Defects in Solids, 156 (2001), 1-4; S. 157 - 161. https://doi.org/10.1080/10420150108216888

154.		Palankovski, V., Schultheis, R., Selberherr, S.: Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide IEEE Transactions on Electron Devices, 48 (2001), 6; S. 1264 - 1269. https://doi.org/10.1109/16.925258

153.		Kosina, H., Nedjalkov, M.: The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices Mathematics and Computers in Simulation, 55 (2001), S. 93 - 102.

152.		Dragosits, K., Selberherr, S.: Two-Dimensional Simulation of Ferroelectric Memory Cells IEEE Transactions on Electron Devices, 48 (2001), 2; S. 316 - 322. https://doi.org/10.1109/16.902733

151.		Grasser, T., Kosina, H., Gritsch, M., Selberherr, S.: Using Six Moments of Boltzmann's Transport Equation for Device Simulation Journal of Applied Physics, 90 (2001), 5; S. 2389 - 2396. https://doi.org/10.1063/1.1389757

150.		Nedjalkov, M., Kosina, H.: Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling Mathematics and Computers in Simulation, 55 (2001), 1-3; S. 191 - 198.

149.		Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.: A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation IEICE Transactions on Electronics, E83-C (2000), 8; S. 1259 - 1266.

148.		Kosina, H., Nedjalkov, M., Selberherr, S.: A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation Journal of Applied Physics, 87 (2000), 9; S. 4308 - 4314. https://doi.org/10.1063/1.373070

147.		Nedjalkov, M., Kosina, H., Selberherr, S.: A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers IEICE Transactions on Electronics, E83-C (2000), 8; S. 1218 - 1223.

146.		Quay, R., Moglestue, C., Palankovski, V., Selberherr, S.: A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials Materials Science in Semiconductor Processing, 3 (2000), 1-2; S. 149 - 155. https://doi.org/10.1016/S1369-8001(00)00015-9

145.		Heitzinger, C., Selberherr, S.: An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers Proceedings of SPIE, 4228 (2000), S. 279 - 289. https://doi.org/10.1117/12.405424

144.		Brech, H., Grave, T., Selberherr, S.: Development of Global Calibration for Accurate GaAs-PHEMT Simulation IEEE Transactions on Electron Devices, 47 (2000), 10; S. 1957 - 1964. https://doi.org/10.1109/16.870581

143.		Knaipp, M., Kanert, W., Selberherr, S.: Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure Solid-State Electronics, 44 (2000), 7; S. 1135 - 1143. https://doi.org/10.1016/S0038-1101(00)00046-0

142.		Puchner, H., Castagnetti, R., Pyka, W.: Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions Microelectronic Engineering, 53 (2000), S. 429 - 432.

141.		Grasser, T., Selberherr, S.: Mixed-Mode Device Simulation Microelectronics Journal, 31 (2000), 11-12; S. 873 - 881. https://doi.org/10.1016/S0026-2692(00)00083-5

140.		Kosik, R., Fleischmann, P., Haindl, B., Pietra, P., Selberherr, S.: On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 11; S. 1233 - 1240. https://doi.org/10.1109/43.892848

139.		Pyka, W., Martins, R., Selberherr, S.: Optimized Algorithms for Three-Dimensional Cellular Topography Simulation IEEE Journal of Technology Computer Aided Design, 1 (2000), 20; S. 1 - 36. https://doi.org/10.1109/TCAD.1996.6449177

138.		Hössinger, A., Langer, E., Selberherr, S.: Parallelization of a Monte Carlo Ion Implantation Simulator IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 5; S. 560 - 567. https://doi.org/10.1109/43.845080

137.		Strasser, R., Selberherr, S.: Practical Inverse Modeling with SIESTA IEICE Transactions on Electronics, 83-C (2000), 8; S. 1303 - 1310.

136.		Kosina, H., Nedjalkov, M., Selberherr, S.: Theory of the Monte Carlo Method for Semiconductor Device Simulation IEEE Transactions on Electron Devices, 47 (2000), 10; S. 1898 - 1908. https://doi.org/10.1109/16.870569

135.		Pyka, W., Kirchauer, H., Selberherr, S.: Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography Microelectronic Engineering, 53 (2000), 1-4; S. 449 - 452. https://doi.org/10.1016/S0167-9317(00)00353-1

134.		Kosina, H.: A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis IEEE Transactions on Electron Devices, 46 (1999), 6; S. 1196 - 1200.

133.		Radi, M., Leitner, E., Selberherr, S.: AMIGOS: Analytical Model Interface & General Object-Oriented Solver IEEE Journal of Technology Computer Aided Design, 1 (1999), 17; S. 1 - 72. https://doi.org/10.1109/TCAD.1996.6449174

132.		Gonzalez, B., Palankovski, V., Kosina, H., Hernandez, A., Selberherr, S.: An Energy Relaxation Time Model for Device Simulation Solid-State Electronics, 43 (1999), 9; S. 1791 - 1795. https://doi.org/10.1016/S0038-1101(99)00132-X

131.		Zankel, K., Kosina, H.: Capacitance Simulation of Irradiated Semiconductor Detectors Il Nuovo Cimento, 112 (1999), 1-2; S. 43 - 47.

130.		Stockinger, M., Wild, A., Selberherr, S.: Drive Performance of an Asymmetric MOSFET Structure: The Peak Device Microelectronics Journal, 30 (1999), 3; S. 229 - 233. https://doi.org/10.1016/S0026-2692(98)00111-6

129.		Fleischmann, P., Pyka, W., Selberherr, S.: Mesh Generation for Application in Technology CAD IEICE Transactions on Electronics (eingeladen), E82-C (1999), 6; S. 937 - 947.

128.		Pichler, C., Plasun, R., Strasser, R., Selberherr, S.: Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools IEEE Transactions on Semiconductor Manufacturing, 12 (1999), 1; S. 76 - 86. https://doi.org/10.1109/66.744527

127.		Palankovski, V., Kaiblinger-Grujin, G., Selberherr, S.: Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices Materials Science and Engineering B, 66 (1999), 1-3; S. 46 - 49. https://doi.org/10.1016/S0921-5107(99)00118-X

126.		Pyka, W., Fleischmann, P., Haindl, B., Selberherr, S.: Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18 (1999), 12; S. 1741 - 1749. https://doi.org/10.1109/43.811323

125.		Dragosits, K., Knaipp, M., Selberherr, S.: Two-Dimensional Simulation of Ferroelectric Memory Cells Journal of the Korean Physical Society, 35 (1999), 92; S. 104 - 106. https://doi.org/10.3938/jkps.35.S104

124.		Martins, R., Selberherr, S., Vaz, F.: A CMOS IC for Portable EEG Acquisition Systems IEEE Transactions on Instrumentation and Measurement, 47 (1998), 5; S. 1191 - 1196. https://doi.org/10.1109/19.746581

123.		Wasshuber, C., Kosina, H., Selberherr, S.: A Comparative Study of Single-Electron Memories IEEE Transactions on Electron Devices, 45 (1998), 11; S. 2365 - 2371. https://doi.org/10.1109/16.726659

122.		Kosina, H., Harrer, M.: A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure VLSI Design, 6 (1998), 1-4; S. 205 - 208. https://doi.org/10.1155/1998/83430

121.		Kaiblinger-Grujin, G., Kosina, H.: An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations VLSI Design, 6 (1998), 1-4; S. 209 - 212. https://doi.org/10.1155/1998/87014

120.		Schrom, G., Stach, A., Selberherr, S.: An Interpolation Based MOSFET Model for Low-Voltage Applications Microelectronics Journal, 29 (1998), 8; S. 529 - 534. https://doi.org/10.1016/S0026-2692(98)00002-0

119.		Selberherr, S.: Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren E&I Elektrotechnik und Informationstechnik (eingeladen), 115 (1998), 7/8; S. 344 - 348. https://doi.org/10.1007/BF03159602

118.		Wasshuber, C.: Grenzen der Miniaturisierung - Die Zukunft der Mikroelektronik Informatik Spektrum (eingeladen), 21 (1998), 4; S. 223 - 226.

117.		Martins, R., Pyka, W., Sabelka, R., Selberherr, S.: High-Precision Interconnect Analysis IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 11; S. 1148 - 1159. https://doi.org/10.1109/43.736187

116.		Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.: Influence of the Doping Element on the Electron Mobility in n-Silicon Journal of Applied Physics, 83 (1998), 6; S. 3096 - 3101. https://doi.org/10.1063/1.367067

115.		Plasun, R., Stockinger, M., Selberherr, S.: Integrated Optimization Capabilities in the VISTA Technology CAD Framework IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; S. 1244 - 1251. https://doi.org/10.1109/43.736564

114.		Kosina, H., Kaiblinger-Grujin, G.: Ionized-Impurity Scattering of Majority Electrons in Silicon Solid-State Electronics, 42 (1998), 3; S. 331 - 338. https://doi.org/10.1016/S0038-1101(97)00199-8

113.		Leitner, E., Selberherr, S.: Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 7; S. 561 - 572. https://doi.org/10.1109/43.709394

112.		Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.: Monte Carlo Simulation of Silicon Amorphization during Ion Implantation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; S. 1236 - 1243. https://doi.org/10.1109/43.736563

111.		Nedjalkov, M., Dimov, I., Haug, H.: Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering Physica Status Solidi B - Basic Solid State Physics, 209 (1998), 1; S. 109 - 121.

110.		Kosina, H., Troger, C.: SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands VLSI Design, 8 (1998), 1-4; S. 489 - 493. https://doi.org/10.1155/1998/39231

109.		Wasshuber, C., Kosina, H.: Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge VLSI Design, 6 (1998), 1-4; S. 35 - 38. https://doi.org/10.1155/1998/53694

108.		Wasshuber, C., Kosina, H., Selberherr, S.: Single-Electron Memories VLSI Design, 8 (1998), 1-4; S. 219 - 223. https://doi.org/10.1155/1998/83017

107.		Kirchauer, H., Selberherr, S.: Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination Proceedings of SPIE, 3334 (1998), S. 764 - 776. https://doi.org/10.1117/12.310809

106.		Schrom, G., De Vivek Selberherr, S.: VLSI Performance Metric Based on Minimum TCAD Simulations IEEE Journal of Technology Computer Aided Design, 1 (1998), 12; S. 1 - 29. https://doi.org/10.1109/TCAD.1996.6449169

105.		Noll, H., Selberherr, S.: Zur Entwicklung der Mikroelektronik Telematik, 4 (1998), 1; S. 2 - 6.

104.		Wasshuber, C., Kosina, H.: A Single-Electron Device and Circuit Simulator Superlattices and Microstructures, 21 (1997), 1; S. 37 - 42. https://doi.org/10.1006/spmi.1996.0138

103.		Wasshuber, C., Kosina, H., Selberherr, S.: A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling IEEE Journal of Technology Computer Aided Design, 1 (1997), 7; S. 1 - 18. https://doi.org/10.1109/TCAD.1996.6449164

102.		Kosina, H.: Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations Physica Status Solidi A, 163 (1997), 2; S. 475 - 489.

101.		Fleischmann, P., Selberherr, S.: Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD IEEE Journal of Technology Computer Aided Design, 1 (1997), 8; S. 1 - 38. https://doi.org/10.1109/TCAD.1996.6449165

100.		Pichler, C., Plasun, R., Strasser, R., Selberherr, S.: High-Level TCAD Task Representation and Automation IEEE Journal of Technology Computer Aided Design, 1 (1997), 5; S. 1 - 30. https://doi.org/10.1109/TCAD.1996.6449162

99.		Kaiblinger-Grujin, G., Kosina, H., Köpf, C., Selberherr, S.: Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors Materials Science Forum, 258-263 (1997), S. 939 - 944. https://doi.org/10.4028/www.scientific.net/MSF.258-263.939

98.		Brech, H., Grave, T., Simlinger, T., Selberherr, S.: Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations IEEE Transactions on Electron Devices, 44 (1997), 11; S. 1822 - 1828. https://doi.org/10.1109/16.641348

97.		Köpf, C., Kosina, H., Selberherr, S.: Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport Solid-State Electronics, 41 (1997), 8; S. 1139 - 1152. https://doi.org/10.1016/S0038-1101(97)00051-8

96.		Kirchauer, H., Selberherr, S.: Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 12; S. 1431 - 1438. https://doi.org/10.1109/43.664225

95.		Wasshuber, C., Kosina, H., Selberherr, S.: SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 9; S. 937 - 944. https://doi.org/10.1109/43.658562

94.		Simlinger, T., Brech, H., Grave, T., Selberherr, S.: Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT IEEE Transactions on Electron Devices, 44 (1997), 5; S. 700 - 707. https://doi.org/10.1109/16.568029

93.		Kirchauer, H., Selberherr, S.: Three-Dimensional Photolithography Simulation IEEE Journal of Technology Computer Aided Design, 1 (1997), 6; S. 1 - 37. https://doi.org/10.1109/TCAD.1996.6449163

92.		Vinzenz, K., Selberherr, S.: Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen Acta Chirurgica Austriaca (eingeladen), 28 (1996), 1; S. 60 - 61.

91.		Schrom, G., Pichler, C., Simlinger, T., Selberherr, S.: On the Lower Bounds of CMOS Supply Voltage Solid-State Electronics, 39 (1996), 4; S. 425 - 430. https://doi.org/10.1016/0038-1101(95)00171-9

90.		Khalil, N., Faricelli, J., Huang, C., Selberherr, S.: Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling Journal of Vacuum Science & Technology B, 14 (1996), 1; S. 224 - 230. https://doi.org/10.1116/1.589033

89.		Strasser, E., Selberherr, S.: Algorithms and Models for Cellular Based Topography Simulation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14 (1995), 9; S. 1104 - 1114. https://doi.org/10.1109/43.406712

88.		Puchner, H., Selberherr, S.: An Advanced Model for Dopant Diffusion in Polysilicon IEEE Transactions on Electron Devices, 42 (1995), 10; S. 1750 - 1755. https://doi.org/10.1109/16.464423

87.		Kosina, H., Langer, E., Selberherr, S.: Device Modelling for the 1990s Microelectronics Journal (eingeladen), 26 (1995), 2-3; S. 217 - 233. https://doi.org/10.1016/0026-2692(95)98923-F

86.		Stippel, H., Leitner, E., Pichler, C., Puchner, H., Strasser, E., Selberherr, S.: Process Simulation for the 1990s Microelectronics Journal (eingeladen), 26 (1995), 2-3; S. 203 - 215. https://doi.org/10.1016/0026-2692(95)98922-E

85.		Habas, P.: The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs Microelectronic Engineering, 28 (1995), 1-4; S. 171 - 174. https://doi.org/10.1016/0167-9317(95)00038-A

84.		Khalil, N., Faricelli, J., Bell, D., Selberherr, S.: The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling IEEE Electron Device Letters, 16 (1995), 1; S. 17 - 19. https://doi.org/10.1109/55.363213

83.		Mukai, M., Tatsumi, T., Nakauchi, N., Kobayashi, T., Koyama, K., Komatsu, Y., Bauer, R., Rieger, G., Selberherr, S.: The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI Technical Report of IEICE, 95 (1995), 223; S. 63 - 68.

82.		Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Lindorfer, P., Pichler, C., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., Selberherr, S.: The Viennese Integrated System for Technology CAD Applications Microelectronics Journal, 26 (1995), S. 137 - 158. https://doi.org/10.1016/0026-2692(95)98918-H

81.		Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.: Trajectory Split Method for Monte Carlo Simulation of Ion Implantation IEEE Transactions on Semiconductor Manufacturing, 8 (1995), 4; S. 402 - 407. https://doi.org/10.1109/66.475181

80.		Brand, H., Selberherr, S.: Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor IEEE Transactions on Electron Devices, 42 (1995), 12; S. 2137 - 2146. https://doi.org/10.1109/16.477772

79.		Halama, S., Pichler, C., Rieger, G., Schrom, G., Simlinger, T., Selberherr, S.: VISTA - User Interface, Task Level, and Tool Integration IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14 (1995), 10; S. 1208 - 1222. https://doi.org/10.1109/43.466337

78.		Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessene, F., Dollfus, P., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., Higman, J.M., Izuka, T., Jungemann, C., Kamakura, Y., Kosina, H., Kunikiyo, T., Laux, S.E., Lin, H., Maziar, C., Mizuno, H., Peifer, H.J., Ramaswamy, S., Sano, N., Scrobohaci, P.G., Selberherr, S., Takenaka, M., Tang, T.-W., Taniguchi, K., Thobel, J.L., Thoma, R., Tomizawa, K., Tomizawa, M., Vogelsang, T., Wang, S.-L., Wang, X., Yao, C.-S., Yoder, P.D., Yoshii, A.: A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon IEEE Transactions on Electron Devices, 41 (1994), 9; S. 1646 - 1654. https://doi.org/10.1109/16.310119

77.		Kosina, H., Selberherr, S.: A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13 (1994), 2; S. 201 - 210. https://doi.org/10.1109/43.259943

76.		Strasser, E., Schrom, G., Wimmer, K., Selberherr, S.: Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations IEICE Transactions on Electronics, E77-C (1994), 2; S. 92 - 97.

75.		Brand, H., Selberherr, S.: Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT) IEICE Transactions on Electronics, E77-C (1994), 2; S. 179 - 186.

74.		Stippel, H., Selberherr, S.: Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree IEICE Transactions on Electronics, E77-C (1994), 2; S. 118 - 123.

73.		Fasching, F., Tuppa, W., Selberherr, S.: VISTA - The Data Level IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13 (1994), 1; S. 72 - 81. https://doi.org/10.1109/43.273748

72.		Fischer, C., Nanz, G., Selberherr, S.: Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas Computer Methods in Applied Mechanics and Engineering, 110 (1993), 1-2; S. 17 - 24. https://doi.org/10.1016/0045-7825(93)90016-Q

71.		Halama, S., Selberherr, S.: Future Aspects of Process and Device Simulation Electron Technology (eingeladen), 26 (1993), S. 49 - 57.

70.		Selberherr, S.: Technology Computer-Aided Design South African Journal of Physics (eingeladen), 16 (1993), 1/2; S. 1 - 5.

69.		Nanz, G., Dickinger, P., Selberherr, S.: Calculation of Contact Currents in Device Simulation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11 (1992), 1; S. 128 - 136. https://doi.org/10.1109/43.108625

68.		Hackel, M., Faber, M., Markum, H., Müller, M.: Chiral Interface for QCD with Dynamical Quarks International Journal of Modern Physics C, 3 (1992), 5; S. 961 - 970. https://doi.org/10.1142/S0129183192000622

67.		Heinreichsberger, O., Selberherr, S., Stiftinger, M., Traar, K.: Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation SIAM Journal of Scientific and Statistical Computing, 13 (1992), 1; S. 289 - 306. https://doi.org/10.1137/0913015

66.		Hackel, M., Faber, M., Markum, H.: Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks Physical Review D, 46 (1992), 12; S. 5648 - 5654.

65.		Habas, P., Faricelli, J.: Investigation of the Physical Modeling of the Gate-Depletion Effect IEEE Transactions on Electron Devices, 39 (1992), 6; S. 1496 - 1500. https://doi.org/10.1109/16.137331

64.		Demel, J., Selberherr, S.: Application of the Complete Tableau Approach in JANAP Electrosoft, 2 (1991), 6; S. 243 - 260.

63.		Selberherr, S.: Device Modeling and Physics Physica Scripta (eingeladen), T35 (1991), S. 293 - 298. https://doi.org/10.1088/0031-8949/1991/T35/057

62.		Langer, E.: Fundamental Analysis of Surface Acoustic Wave Propagation International Journal of Engineering Science, 29 (1991), 3; S. 331 - 343. https://doi.org/10.1016/0020-7225(91)90153-T

61.		Selberherr, S., Stiftinger, M., Heinreichsberger, O., Traar, K.: On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers Computer Physics Communications, 67 (1991), 1; S. 145 - 156. https://doi.org/10.1016/0010-4655(91)90227-C

60.		Nanz, G., Kausel, W., Selberherr, S.: Self-Adaptive Space and Time Grids in Device Simulation International Journal for Numerical Methods in Engineering, 31 (1991), 7; S. 1357 - 1374. https://doi.org/10.1002/nme.1620310709

59.		Habas, P.: A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility Solid-State Electronics, 33 (1990), 7; S. 923 - 933. https://doi.org/10.1016/0038-1101(90)90074-O

58.		Kausel, W., Nylander, J.O., Nanz, G., Selberherr, S., Pötzl, H.: BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts Microelectronics Journal, 21 (1990), 5; S. 5 - 21. https://doi.org/10.1016/0026-2692(90)90014-T

57.		Kosina, H., Selberherr, S.: Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors Japanese Journal of Applied Physics, 29 (1990), 12; S. L2283 - L2285. https://doi.org/10.1143/JJAP.29.L2283

56.		Langer, E.: "Fundamental Analysis of Surface Acoustic Wave Propagation"; Archiv für Elektronik und Übertragungstechnik, 44 (1990), 3; S. 225 - 232.

55.		Habas, P., Selberherr, S.: Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20 (1990), 4; S. 185 - 188.

54.		Dickinger, P.: "New Models of High Voltage DMOS Devices for Circuit Simulation"; Electrosoft, 1 (1990), 4; S. 298 - 308.

53.		Thurner, M., Lindorfer, P., Selberherr, S.: Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9 (1990), 11; S. 1189 - 1197. https://doi.org/10.1109/43.62756

52.		Habas, P., Selberherr, S.: On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling Solid-State Electronics, 33 (1990), 12; S. 1539 - 1544. https://doi.org/10.1016/0038-1101(90)90134-Z

51.		Langer, E.: "Special Issue on "Semiconductor devices and electronic circuit design""; Electrosoft, 1 (1990), 4.

50.		Selberherr, S., Hänsch, W., Seavey, M., Slotboom, J.: The Evolution of the MINIMOS Mobility Model Archiv für Elektronik und Übertragungstechnik, 44 (1990), 3; S. 161 - 172.

49.		Selberherr, S., Hänsch, W., Seavey, M., Slotboom, J.: The Evolution of the MINIMOS Mobility Model Solid-State Electronics, 33 (1990), 11; S. 1425 - 1436. https://doi.org/10.1016/0038-1101(90)90117-W

48.		Selberherr, S., Langer, E.: Three Dimensional Process and Device Modeling Microelectronics Reliability, 30 (1990), 3; S. 624. https://doi.org/10.1016/0026-2714(90)90512-L

47.		Thurner, M., Selberherr, S.: Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9 (1990), 8; S. 856 - 867. https://doi.org/10.1109/43.57786

46.		Nylander, J.O., Masszi, F., Selberherr, S., Berg, S.: Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity Solid-State Electronics, 32 (1989), 5; S. 363 - 367. https://doi.org/10.1016/0038-1101(89)90125-1

45.		Selberherr, S.: MOS Device Modeling at 77K IEEE Transactions on Electron Devices, 36 (1989), 8; S. 1464 - 1474. https://doi.org/10.1109/16.30960

44.		Hobler, G., Selberherr, S.: Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8 (1989), 5; S. 450 - 459. https://doi.org/10.1109/43.24873

43.		Selberherr, S.: Process Modeling Microelectronic Engineering, 9 (1989), 1-4; S. 605 - 610. https://doi.org/10.1016/0167-9317(89)90129-9

42.		Selberherr, S., Langer, E.: Three Dimensional Process and Device Modeling Microelectronics Journal (eingeladen), 20 (1989), 1-2; S. 113 - 127. https://doi.org/10.1016/0026-2692(89)90126-2

41.		Kausel, W., Pötzl, H., Nanz, G., Selberherr, S.: Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor Solid-State Electronics, 32 (1989), 9; S. 685 - 709. https://doi.org/10.1016/0038-1101(89)90002-6

40.		Selberherr, S.: Computer für Wissenschaft und Forschung Österreichische Hochschulzeitung (eingeladen), 5 (1988), S. 9 - 10.

39.		Selberherr, S.: Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik Österreichische Hochschulzeitung (eingeladen), 7 (1988), S. 25.

38.		Hobler, G., Selberherr, S.: Two-Dimensional Modeling of Ion Implantation Induced Point Defects IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7 (1988), 2; S. 174 - 180. https://doi.org/10.1109/43.3147

37.		Budil, M., Guerrero, E., Brabec, T., Selberherr, S., Pötzl, H.: A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6 (1987), 1; S. 37 - 44. https://doi.org/10.1108/eb010299

36.		Hänsch, W., Selberherr, S.: MINIMOS 3: A MOSFET Simulator that Includes Energy Balance IEEE Transactions on Electron Devices, 34 (1987), 5; S. 1074 - 1078. https://doi.org/10.1109/T-ED.1987.23047

35.		Hobler, G., Langer, E., Selberherr, S.: Two-Dimensional Modeling of Ion Implantation with Spatial Moments Solid-State Electronics, 30 (1987), 4; S. 445 - 455. https://doi.org/10.1016/0038-1101(87)90175-4

34.		Baghai-Wadji, A.R., Selberherr, S., Seifert, F.: Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, UFFC-33 (1986), 3; S. 315 - 317. https://doi.org/10.1109/T-UFFC.1986.26834

33.		Selberherr, S.: Process and Device Modeling for VLSI Microelectronics Journal, 16 (1985), 6; S. 56 - 57. https://doi.org/10.1016/S0026-2692(85)80172-5

32.		Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods IEEE Transactions on Electron Devices, 32 (1985), 2; S. 156 - 167. https://doi.org/10.1109/T-ED.1985.21925

31.		Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H.: Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods IEEE Journal of Solid-State Circuits, 20 (1985), 1; S. 76 - 87. https://doi.org/10.1109/JSSC.1985.1052279

30.		Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H.: Simulation of Critical IC-Fabrication Steps IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 4 (1985), 4; S. 384 - 397. https://doi.org/10.1109/TCAD.1985.1270136

29.		Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H.: Simulation of Critical IC-Fabrication Steps IEEE Transactions on Electron Devices, 32 (1985), 10; S. 1940 - 1953. https://doi.org/10.1109/T-ED.1985.22226

28.		Pichler, P., Jüngling, W., Selberherr, S., Pötzl, H.: Two-Dimensional Coupled Diffusion Modeling Physica B: Condensed Matter, 129 (1985), 1-3; S. 187 - 191. https://doi.org/10.1016/0378-4363(85)90566-2

27.		Markowich, P., Selberherr, S.: A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments Matematica Aplicada e Computacional, 3 (1984), 2; S. 131 - 156.

26.		Selberherr, S., Ringhofer, Ch.: Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3 (1984), 1; S. 52 - 64. https://doi.org/10.1109/TCAD.1984.1270057

25.		Schütz, A., Selberherr, S., Pötzl, H.: Modeling MOS-Transistors in the Avalanche Breakdown Regime Transactions on Computer Simulation (eingeladen), 1 (1984), 1; S. 1 - 14.

24.		Jüngling, W., Guerrero, E., Selberherr, S.: On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3 (1984), 2; S. 79 - 105. https://doi.org/10.1108/eb009989

23.		Selberherr, S.: Process and Device Modeling for VLSI Microelectronics Reliability (eingeladen), 24 (1984), 2; S. 225 - 257. https://doi.org/10.1016/0026-2714(84)90450-5

22.		Schütz, A., Selberherr, S., Pötzl, H.: Temperature Distribution and Power Dissipation in MOSFETs Solid-State Electronics, 27 (1984), 4; S. 394 - 395. https://doi.org/10.1016/0038-1101(84)90175-8

21.		Demel, J., Selberherr, S.: VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran Angewandte Informatik, 6 (1984), S. 244 - 247.

20.		Machek, J., Selberherr, S.: A Novel Finite-Element Approach to Device Modeling IEEE Transactions on Electron Devices, 30 (1983), 9; S. 1083 - 1092. https://doi.org/10.1109/T-ED.1983.21262

19.		Markowich, P., Ringhofer, Ch., Selberherr, S.: A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices MRC Technical Summary Report, 2482 (1983), S. 1 - 50.

18.		Markowich, P., Ringhofer, Ch., Selberherr, S., Lentini, M.: A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations IEEE Transactions on Electron Devices, 30 (1983), 9; S. 1165 - 1180. https://doi.org/10.1109/T-ED.1983.21273

17.		Markowich, P., Ringhofer, Ch., Langer, E., Selberherr, S.: An Asymptotic Analysis of Single-Junction Semiconductor Devices MRC Technical Summary Report, 2527 (1983), S. 1 - 62.

16.		Franz, A.F., Franz, G., Selberherr, S., Ringhofer, Ch., Markowich, P.: Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation IEEE Transactions on Electron Devices, 30 (1983), 9; S. 1070 - 1082. https://doi.org/10.1109/T-ED.1983.21261

15.		Ringhofer, Ch., Selberherr, S.: Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs MRC Technical Summary Report, 2513 (1983), S. 1 - 49.

14.		Langer, E., Selberherr, S., Markowich, P., Ringhofer, Ch.: Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials Sensors and Actuators, 4 (1983), 1; S. 71 - 76. https://doi.org/10.1016/0250-6874(83)85010-0

13.		Langer, E., Selberherr, S., Mader, H.: A Numerical Analysis of Bulk-Barrier Diodes Solid-State Electronics, 25 (1982), 4; S. 317 - 324. https://doi.org/10.1016/0038-1101(82)90141-1

12.		Markowich, P., Ringhofer, Ch., Selberherr, S., Langer, E.: A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device MRC Technical Summary Report, 2388 (1982), S. 1 - 57.

11.		Schütz, A., Selberherr, S., Pötzl, H.: A Two-Dimensional Model of the Avalanche Effect in MOS Transistors Solid-State Electronics, 25 (1982), 3; S. 177 - 183. https://doi.org/10.1016/0038-1101(82)90105-8

10.		Schütz, A., Selberherr, S., Pötzl, H.: Analysis of Breakdown Phenomena in MOSFET's IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, CAD-1 (1982), 2; S. 77 - 85. https://doi.org/10.1109/TCAD.1982.1269997

9.		Goebl, H., Selberherr, S., -D Rase, W., Pudlatz, H.: Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique Computers and the Humanities, 16 (1982), S. 69 - 84. https://doi.org/10.1007/BF02259737

8.		Selberherr, S., Schütz, A., Pötzl, H.: Investigation of Parameter Sensitivity of Short Channel MOSFETs Solid-State Electronics, 25 (1982), 2; S. 85 - 90. https://doi.org/10.1016/0038-1101(82)90035-1

7.		Langer, E., Selberherr, S., Mader, H.: Numerische Analyse der Bulk-Barrier Diode Archiv für Elektronik und Übertragungstechnik, 36 (1982), 2; S. 86 - 91.

6.		Selberherr, S., Guerrero, E.: Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals Solid-State Electronics, 24 (1981), 6; S. 591 - 593. https://doi.org/10.1016/0038-1101(81)90081-2

5.		Selberherr, S., Schütz, A., Pötzl, H.: Two-Dimensional MOS Transistor Modelling European Electronics (eingeladen), 1 (1981), 3; S. 20 - 30.

4.		Selberherr, S., Schütz, A., Pötzl, H.: MINIMOS - A Two-Dimensional MOS Transistor Analyzer IEEE Transactions on Electron Devices, 27 (1980), 8; S. 1540 - 1550. https://doi.org/10.1109/T-ED.1980.20068

3.		Selberherr, S., Schütz, A., Pötzl, H.: MINIMOS - A Two-Dimensional MOS Transistor Analyzer IEEE Journal of Solid-State Circuits, 15 (1980), 4; S. 605 - 615. https://doi.org/10.1109/JSSC.1980.1051444

2.		Selberherr, S., Schütz, A., Pötzl, H.: MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1) Elektronikschau, 9 (1980), S. 18 - 23.

1.		Selberherr, S., Schütz, A., Pötzl, H.: MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2) Elektronikschau, 10 (1980), S. 54 - 58.