Miniaturized Transistors, Volume II

Abstract:

Due to the great success of the initial Special Issue on Miniaturized Transistors, we have decided to continue addressing the ever-advancing progress in microelectronic device scaling with this second volume. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of seeming physical limitations to scaling, helped by advancing fabrication techniques. We also observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, we note that a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., power applications, optoelectronics, and sensors) are taking the front stage in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies.

Table of Contents:

• Special Issue on Miniaturized Transistors, Volume II         
• Miniaturization of CMOS
• Hybrid Polymer/Metal Oxide Thin Films for High Performance, Flexible Transistors
• Reliability of Miniaturized Transistors from the Perspective of Single-Defects
• Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors
• Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
• A One-Dimensional Effective Model for Nanotransistors in Landauer–Büttiker Formalism
• Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
• Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
• A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator
• A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications
• T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)
• 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
• Improved DRUS 4H-SiC MESFET with High Power Added Efficiency
• Investigation of 1200 V SiC MOSFETs’ Surge Reliability
• Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET
• Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs
• Improved MRD 4H-SiC MESFET with High Power Added Efficiency
• Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
• Vertical Field Emission Air-Channel Diodes and Transistors
• A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control
• A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth
• Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides