Book Information

Strain-Induced Effects in Advanced MOSFETs


  • Author: Sverdlov, Viktor
  • Published: 2011, 252 pages
  • ISBN: 978-3-7091-0381-4
  • Information from Amazon

  • Abstract:
    Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

    Table of Contents:
    • Introduction
    • Scaling, Power Consumption, and Mobility Enhancement Techniques
    • Strain and Stress
    • Basic Properties of the Silicon Lattice
    • Band Structure of Relaxed Silicon
    • Perturbative Methods for Band Structure Calculations in Silicon
    • Strain Effects on the Silicon Crystal Structure
    • Strain Effects on the Silicon Band Structure
    • Strain Effects on the Conduction Band of Silicon
    • Electron Subbands in Silicon in the EffectiveMass Approximation
    • Electron Subbands in Thin Silicon Films
    • Demands of Transport Modeling in Advanced MOSFETs