We are proud to announce that on June 2nd the research paper entitled "Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning" co-authored by our colleagues Theresia, Yury, Lado, Michael and Tiborwas published in Nature Electronics. The paper describes a strategy to enhance the electrical stability of transistors based on 2D semiconductors by reducing the number of electrically active traps in the gate oxide through tuning the channel's Fermi-level.

The full technical paper will be available in the June issue and can be accessed here.

Congratulations to our colleagues for publishing this important study.