Alexander Toifl defended his master's thesis "Modeling and Simulation of Thermal Annealing of Implanted GaN and SiC" on June 14th which is based on his excellent work within the Christian Doppler Laboratory for High Performance TCAD. Parts of his work will be presented at the 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) in Austin, TX, USA as well as in an upcoming article in Journal of Applied Physics (JAP).
He will join the Christian Doppler Laboratory for High Performance TCAD as a doctoral student on August 1st, 2018.
