There is a strong and growing need for low-power electronics, both for conventional computing and for the emerging needs of the Internet of Things. In this context a new cooperation with GTS (Global TCAD Solutions GmbH) will be started aiming at the development of physical models and simulation tools for two classes of low-power devices: Ferro-electric Random-Access-Memories (FeRAM) and Negative-Capacitance Field Effect Transistors (NCFET).

This project is financially supported by the Austrian Research Promotion Agency (FFG).