Dipl.-Ing. Gerald Rescher

Time: Tuesday, November 13^th, 2018, 11:30 a.m. 

Place: E370 Seminar room CF0341, Gußhausstraße 25, 3^rd Floor 

Title: Behavior of SiC-MOSFETs under Temperature and Voltage Stress

PhD Dissertation Committe:

Supervisor and Examiner:

• Univ. Prof. Dr. Tibor Grasser (TU Wien, Austria)    

Assessors and Examiners:

• Univ.Prof. Dr. Peter Hadley (TU Graz, Austria)
• Prof. Emer. Dr. James A. Cooper Jr. (Purdue University, West Lafayette, IN, USA)