We are thrilled to announce that on July 4th the paper entitled “Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects” authored by our colleagues Dr. Yury Illarionov and Prof. Tibor Grasser was published in Advanced Functional Materials Journal.
The full technical paper is available in the journal's 28th Issue.
Congratulations to our colleagues for publishing this important work.
