Our papers titled Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs  and Parameter–Free Modeling of Hot–Carrier Degradation have been accepted at the 65^th International Electron Devices Meeting (IEDM). The 1^st work  is co-authored by Dipl.-Ing. Christian Schleich, Prof. Tibor Grasser, Dr. Michael Waltl, and our industrial partners from Global TCAD Solutions, KAI, Infineon and IMEC will be presented by Dipl.-Ing. Christian Schleich while the 2^nd one which is a collaboration of Dipl.-Ing. Markus Jech, Dr. Michael Waltl, Prof. Tibor Grasser and our colleagues from IMEC will be presented by Dipl.-Ing .Markus Jech.
The event will take place in December 7-11, 2019 Hilton San Francisco and we wish our colleagues a successful IEDM 2019!