Erasmus Langer
Siegfried Selberherr
Elaf Al-Ani
Hajdin Ceric
Siddhartha Dhar
Robert Entner
Klaus-Tibor Grasser
René Heinzl
Clemens Heitzinger
Christian Hollauer
Stefan Holzer
Gerhard Karlowatz
Markus Karner
Hans Kosina
Ling Li
Gregor Meller
Johannes Mesa Pascasio
Mihail Nedjalkov
Alexandre Nentchev
Vassil Palankovski
Mahdi Pourfath
Philipp Schwaha
Alireza Sheikholeslami
Michael Spevak
Viktor Sverdlov
Oliver Triebl
Stephan-Enzo Ungersböck
Martin Wagner
Wilfried Wessner
Robert Wittmann

Mihail Nedjalkov
MSc. Dr.phys.
nedjalkov(!at)iue.tuwien.ac.at
Biography:
Mihail Nedjalkov was born in Sofia, Bulgaria. He received a master's degree in semiconductor physics at the Sofia University "Kl. Ohridski" in 1981 and a Ph.D. degree at the Bulgarian Academy of Sciences (BAS) in 1990. Since 2001, Dr. Nedjalkov has held a permanent Associate Professor position at the Institute for Parallel Processing, BAS. He held visiting research positions at the Department of Physics, University of Modena (1994), Institute for Theoretical Physics, University of Frankfurt (1998), Institute for Microelectronics, Technical University of Vienna (1999-2003) and Ira Fulton School of Engineering, Arizona State University (2004). In March 2005, Dr. Nedjalkov joined the Advanced Materials and Device Analysis group (START Project) at the Institute for Microelectronics. Dr. Nedjalkov was invited lecturer in the 2004 International School of Physics "Enrico Fermi," Varenna, Italy, and is a member of the Italian Physical Society. His research interests include physics and modeling of classical and quantum carrier transport in semiconductor materials, devices and nanostructures, collective phenomena, theory and application of stochastic methods.

A Self-Consistent Event-Biasing Scheme for Statistical Enhancement

Statistical enhancement aims at reduction of the time necessary for computation of the desired device characteristics. Enhancement algorithms are especially useful when the device behavior is governed by rare events in the transport process. Such events are inherent for the sub-threshold regime of device operation, simulations of effects due to discrete dopant distribution, as well as tunneling phenomena. Virtually all Monte Carlo device simulators with statistical enhancement use population control techniques. They are based on the heuristic idea for splitting of the particles entering the given phase-space region D of interest. The alternative idea - to enrich the statistic in D by biasing the probabilities associated with the transport of classical carriers - gives rise to the event-biasing approach. Due to the event biasing, the behavior of the simulated Ensemble Monte Carlo (EMC) particles differs from that of Boltzmann carriers. Nevertheless the Boltzmann distribution function f is recovered by using the proper weights associated with the particles. The approach is derived from the integral form of the linear Boltzmann equation (BE), where Coulomb interactions are neglected.
The approach is generalized for Hartree electrons in the presence of both initial and boundary conditions. The BE becomes nonlinear via the Hartree component of the electric field. The steps used to derive event biasing cannot be applied directly to BE, so the solution is sought in the iterative procedure of coupling the EMC with the Poisson equation (PE). The fact that the electrical field is frozen between two successive solutions of PE is employed. The BE is linear, and event biasing can be applied. The BE solution f(t) is then obtained within a weighting EMC scheme from the phase-space position of the numerical particles. f(t) gives the correct carrier density for the next solution of the PE. A key point in the proof is to use the Markovian character of the evolution: f(t) becomes the initial condition f0 of the BE for the next time step. Finally, f0 can be biased by inverting the weighting scheme used for f(t). This means that the same particles (with respect to phase-space location and weight) which reach time t can be used to continue the evolution in the next time interval. This proves that the biasing scheme can be used to provide the self-consistent distribution function at any time. In the thermodynamic limit of an infinite number of particles, both Boltzmann and biased stochastic processes give the same evolution of the physical averages. For a finite particle number, the computational efforts depend on the variance of the chosen stochastic process.


Comparison of the channel currents obtained from biased emission-absorption(e-a) rates, biased boundary distribution (T=450K) and the ordinary EMCmethod. The biased methods demonstrate superior convergence behavior.


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