Activities
Erasmus Langer
Siegfried Selberherr
Preface
Oskar Baumgartner Investigation of Tunneling Current in Metal-Oxide-Semiconductor Structures
Hajdin Ceric TCAD Solutions for Electromigration
Johann Cervenka Micro Structure and Mesh Generation for Electromigration Simulation
Otmar Ertl Three-Dimensional Topography Simulation
Wolfgang Gös Rigorous Modeling of Charge Trapping
Klaus-Tibor Grasser A Triple-Well Model for Bias Temperature Instability
Philipp Hehenberger Modeling and Simulation of Bias Temperature Instability and Hot Carrier Effects
René Heinzl A Parallel Generic Scientific Simulation Environment
Gerhard Karlowatz Full Band Monte Carlo Device Simulation
Markus Karner A Comparison of Gate Leakage Current Models for High-k-Metal-Gate-Stacks
Hans Kosina Physical Modeling of Advanced Semiconductor Devices
Gregor Meller Kinetic Monte Carlo Organic Device Simulation
Goran Milovanovic Valence Band Deformation Potentials
Mihail Nedjalkov Wigner Simulation of Nanostructures
Roberto Orio Electromigration Modeling and Simulation
Vassil Palankovski Analysis and Simulation of Advanced Heterostructure Devices
Mahdi Pourfath Numerical Study of CNT-FET Infra-Red Photo-Detectors
Franz Schanovsky Hydrogen in Semiconductor Devices
Philipp Schwaha Typhoon — A Python Module for Rapid-Application-Prototyping
Franz Stimpfl Parallel Mesh Generation for Scientific Computing
Viktor Sverdlov Electron Mobility Enhancement in Strained Silicon
Oliver Triebl Reliability Issues in High-Voltage and Power Semiconductor Devices
Stanislav Tyaginov Determination of the Correlation Length of Insulator Thickness Fluctuations
Martin-Thomas Vasicek Higher-Order Macroscopic Transport Models for Advanced Semiconductor Devices
Stanislav Vitanov Simulation of Novel Heterostructure Field-Effect Transistors
Paul-Jürgen Wagner Measurement Techniques for MOS Reliability Issues
Thomas Windbacher Biologically Sensitive Field-Effect Transistors
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