Rajarshi Roy Chaudhuri has been working as a post-doctoral researcher, since August 2024, on reliability of Gallium Nitride based power semiconductor devices. His work aims at investigating electrical footprints of extended defects, such as, dislocations, in these devices. In addition, he has also been probing power transistor reliability under high electric field and hot carrier stress conditions, employing electro-optical characterization techniques. Prior to joining TU Wien, he defended his PhD thesis from Indian Institute of Science (IISc) in 2024, Bangalore, where his research focus was on gaining experimental insights into high electric field and hot carrier reliability of GaN High Electron Mobility Transistors.