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    Publications Jakob Michl

    9 records


    Publications in Scientific Journals


    4. J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
    "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental";
    IEEE Transactions on Electron Devices, 68, (2021), 6372 - 6378 doi:10.1109/TED.2021.3117740. BibTeX

    3. J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser:
    "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory";
    IEEE Transactions on Electron Devices, 68, (2021), 6365 - 6371 doi:10.1109/TED.2021.3116931. BibTeX

    2. K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl:
    "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors";
    IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX

    1. D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser:
    "Toward Automated Defect Extraction From Bias Temperature Instability Measurements";
    IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX


    Talks and Poster Presentations (with Proceedings-Entry)


    5. J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
    "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS";
    Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX

    4. K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl:
    "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors";
    Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 6 doi:10.1109/IIRW49815.2020.9312871. BibTeX

    3. T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser:
    "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures";
    Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX

    2. A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu:
    "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures";
    Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX

    1. J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl:
    "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures";
    Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX

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    Institute for Microelectronics
    Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
    Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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