Ang Feng was born and raised in Guizhou, China. He specialized in materials physics and chemistry and received his master’s degree from the University of Chinese Academy of Sciences. In May 2022, he earned his Ph.D. in physics from Ghent University for his thesis on charge trapping/detrapping in luminescent materials. Since January 2023 he has been with the Institute for Microelectronics as a postdoctoral researcher, where he focuses on the reliability of SiC MOSFETs.