 | Bernhard Havel Dipl.-Ing. | 
Pubs | ||
| Worked for the IµE from 01-10-2010 to 28-02-2011. | ||||
Biography (as of 28-02-2011): Bernhard Havel was born in Vienna, Austria, in 1977. He worked at CTR (Carinthian Tech Research) as R&D-Engineer, where he began his study at the Vienna University of Technology. He received the BSc degree in Electrical Engineering (2009) and the Diplomingenieur degree in Microelectronics (2010). He joined the Advanced Materials and Device Analysis group at the Institute for Microelectronics in October 2010. His research interests include modeling of semiconductors for solarcells, HBTs and HEMTs, especially thermoelectric and optical effects. | ||||