|Worked for the IµE from 08-06-1988 to 30-06-1991.|
Biography (as of 30-06-1991):
Philipp Lindorfer was born in Steyr, Austria, in 1962. He received the degree of Diplomingenieur from the Technische Universität Wien in 1987 in electrical engineering. In November 1987 he joined the Institute for Microelectronics. His work was focused on the development of models for III-V compound semiconductors in multi-dimensional device simulation, particularly the simulation of GaAs MESFET's. In 1990 he held a Visiting Research position at National Semiconductors, Santa Clara, CA. In June 1991 he received his doctoral degree from the Technische Universität Wien.