Bernhard Ruch was born in Klagenfurt, Austria in 1990. He holds an B.Sc. and M.Sc in technical physics from TU Wien which he acquired in 2014 and 2016, respectively. In 2021 he obtained his doctoral degree from TU Wien. During his doctoral research, which has been performed at KAI in Villach, he focused on the characterization and modeling of hot-carrier degradation in planar and trench power MOSFETs. Bernhard joined TU Wien in Mai 2024, where he is employed as postdoctoral researcher focusing on GaN power devices.