 | Cristiano Sala Dr.rer.nat. | ||||||
| Worked for the IµE from 01-09-1991 to 28-02-1993. | |||||||
Biography (as of 28-02-1993): Cristiano Sala was born in Milan, Italy, in 1964. He received the B.A. Oxon. degree in Physics from the University of Oxford, Great Britain, in 1983, the M.Sc. degree in Applied Physics from the California Institute of Technology, USA, in 1985, the Diploma di Laurea in Physics from the University of Milan, Italy, in 1986, and the Ph.D. degree in Physics from the University of Leuven, Belgium, in 1991. His past interests have included investigating the thermal and structural stability of thin-film diffusion barriers and modelling the high-field transport of electrons in systems of low dimensionality. Since September 1991 he is with the Institute for Microelectronics, where he is in charge of extending MINIMOS' simulation capabilities to AlGaAs/GaAs HEMTs. | |||||||