Dominic Waldhoer received his Bachelor’s degree in Electrical Engineering and his Master’s degree in Microelectronics and Photonics from TU Wien in 2018. He completed his PhD at the Institute for Microelectronics in 2024, where his research focused on multiscale modeling of charge trapping processes in transistors. In his doctoral work, he combined density functional theory with physics-based device simulations to advance the understanding of defect-related reliability phenomena such as bias temperature instability and random telegraph noise, and contributed to the development of the Comphy device simulator, including models based on nonradiative multiphonon theory and methods for defect parameter extraction.
After completing his doctoral studies, he remained at the Institute for Microelectronics, where he now holds a tenure-track position. His scientific interests include theoretical semiconductor device physics, ab initio modeling of crystalline and disordered materials, defect physics, and reliability modeling in emerging device technologies, including transistors based on 2D materials.