|Worked for the IµE from 18-01-2021 to 30-11-2021.|
Biography (as of 30-11-2021):
Weifeng Zhou was born in 1988 in Suzhou, China. He studied Electrical Engineering in Shanghai Jiao Tong University, China, where he received his bachelor's degree in 2011. In 2014 he received his dual-master degrees from Shanghai Jiao Tong University and Georgia Institute of Technology, US. Starting in 2014 he worked as a research assistant at the Institute of Electromagnetic Theory at RWTH Aachen University, Germany, where he received his doctoral degree (Dr.-Ing.) in 2020 for his work on numerical simulations of organic light-emitting diodes. In 2021 he joined the Institute for Microelectronics at TU Wien as a post-doctoral researcher and is currently working on modeling of tunneling current in SiC MOS transistors.