R. Martins, and
Institute for Microelectronics, TU Vienna
Gusshausstr. 27-29, A-1040 Vienna, Austria
E-mail: firstname.lastname@example.org, WWW: http://www.iue.tuwien.ac.at
Abstract - The reduction of computing time without loss of accuracy is a very important task for three-dimensional process simulation. We present new approaches for fast and stable simulation of etching and deposition processes by introducing non spherical structuring element algorithms to our morphological operation based cellular topography simulator. We demonstrate improvements and accelerations for a wide variety of etching and deposition models such as isotropic deposition, uni-directional etching, lithography development simulation, sputter deposition and reactive ion etching. We also draw comparisons with the originally implemented algorithm and other approaches such as the level set method. Furthermore we show a fast, physically based, and accurate three-dimensional simulation of TiN sputter deposition and, by means of a two metal layer interconnect structure, we demonstrate an efficient generation of three-dimensional geometries directly including layout information and photolithography simulation.