We are proud to announce that our paper titled "Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4)" authored by our colleagues Christoph, Dominic, Lukas, Diego, Michael and Tibor has been published in the special issue "Nanoscale Science and Technology on Semiconductor Device Physics" of the Journal Nanomaterials.
Our study uses a machine-learned force field for structure creation of a-Si3N4 with molecular dynamics and ab initio methods to investigate electronic and structural properties of intrinsic electron and hole trapping sites. We analyze these sites within a nonradiative multi-phonon model to show that over- and undercoordinated atoms can contribute to the memory effect in charge trap flash devices.
Congratulations to all co-authors!