Publications Helmut Brech
9 records
| 3. | H. Brech, T. Grave, S. Selberherr: "Development of Global Calibration for Accurate GaAs-PHEMT Simulation"; IEEE Transactions on Electron Devices, 47, (2000), 1957 - 1964 doi:10.1109/16.870581. BibTeX |
| 2. | H. Brech, T. Grave, T. Simlinger, S. Selberherr: "Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations"; IEEE Transactions on Electron Devices, 44, (1997), 1822 - 1828 doi:10.1109/16.641348. BibTeX |
| 1. | T. Simlinger, H. Brech, T. Grave, S. Selberherr: "Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT"; IEEE Transactions on Electron Devices, 44, (1997), 700 - 707 doi:10.1109/16.568029. BibTeX |
| 5. | H. Brech, T. Grave, T. Simlinger, S. Selberherr: "Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Anaheim; 1997-10-12 - 1997-10-15; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1997), ISBN: 0-7803-4083-3, 66 - 69 doi:10.1109/GAAS.1997.628239. BibTeX |
| 4. | H. Brech, T. Grave, A. Werthof, H. Siveris, T. Simlinger, S. Selberherr: "Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics"; Talk: International Symposium on Compound Semiconductors (ISCS), San Diego; 1997-09-08 - 1997-09-11; in "Abstracts Intl. Symposium on Compound Semiconductors", (1997), ThA6. BibTeX |
| 3. | H. Brech, T. Simlinger, T. Grave, S. Selberherr: "Influence of Gatelength on the DC-Characteristics and ft of Pseudomorphic Power-HEMTs"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen; 1997-05-25 - 1997-05-28; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1997), 1 - 2. BibTeX |
| 2. | H. Brech, T. Simlinger, T. Grave, S. Selberherr: "Current Transport in Double Heterojunction HEMTs"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x, 873 - 876. BibTeX |
| 1. | H. Brech, T. Simlinger, T. Grave, S. Selberherr: "Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT"; Talk: III-V Semiconductor Device Simulation Workshop, Eindhoven; 1996-05-09 - 1996-05-10; in "Proceedings Ninth III-V Semiconductor Device Simulation Workshop", (1996), 1 - 3. BibTeX |
| 1. | H. Brech: "Optimization of GaAs Based High Electron Mobility Transistors by Numerical Simulation"; Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1998, oral examination: 1998-04-03. BibTeX |