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Publications Helmut Brech

9 records

Publications in Scientific Journals

3.  H. Brech, T. Grave, S. Selberherr:
"Development of Global Calibration for Accurate GaAs-PHEMT Simulation";
IEEE Transactions on Electron Devices, 47 (2000), 10; 1957 - 1964. https://doi.org/10.1109/16.870581

2.  H. Brech, T. Grave, T. Simlinger, S. Selberherr:
"Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations";
IEEE Transactions on Electron Devices, 44 (1997), 11; 1822 - 1828. https://doi.org/10.1109/16.641348

1.  T. Simlinger, H. Brech, T. Grave, S. Selberherr:
"Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT";
IEEE Transactions on Electron Devices, 44 (1997), 5; 700 - 707. https://doi.org/10.1109/16.568029

Talks and Poster Presentations (with Proceedings-Entry)

5.  H. Brech, T. Grave, A. Werthof, H. Siveris, T. Simlinger, S. Selberherr:
"Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics";
Talk: International Symposium on Compound Semiconductors (ISCS), San Diego; 1997-09-08 - 1997-09-11; in: "Abstracts Intl. Symposium on Compound Semiconductors", (1997), ThA6.

4.  H. Brech, T. Simlinger, T. Grave, S. Selberherr:
"Influence of Gatelength on the DC-Characteristics and ft of Pseudomorphic Power-HEMTs";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen; 1997-05-25 - 1997-05-28; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1997), 1 - 2.

3.  H. Brech, T. Grave, T. Simlinger, S. Selberherr:
"Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Anaheim; 1997-10-12 - 1997-10-15; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1997), ISBN: 0-7803-4083-3; 66 - 69. https://doi.org/10.1109/GAAS.1997.628239

2.  H. Brech, T. Simlinger, T. Grave, S. Selberherr:
"Current Transport in Double Heterojunction HEMTs";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; 873 - 876.

1.  H. Brech, T. Simlinger, T. Grave, S. Selberherr:
"Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT";
Talk: III-V Semiconductor Device Simulation Workshop, Eindhoven; 1996-05-09 - 1996-05-10; in: "Proceedings Ninth III-V Semiconductor Device Simulation Workshop", (1996), 1 - 3.

Doctor's Theses (authored and supervised)

1.  H. Brech:
"Optimization of GaAs Based High Electron Mobility Transistors by Numerical Simulation";
Supervisor, Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1998; oral examination: 1998-04-03.