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Publications Nils Petter Jorstad

24 records

Publications in Scientific Journals

6.   Jorstad, N. P., Fiorentini, S., Ender, J., Wolfgang Goes, Selberherr, S., Sverdlov, V. (2024).
Micromagnetic Modeling of SOT-MRAM Dynamics.
PHYSICA B-CONDENSED MATTER, 676, Article 415612. https://doi.org/10.1016/j.physb.2023.415612 (reposiTUm)

5.   Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2024).
Numerical Study of Two-Terminal SOT-MRAM.
Physica B: Condensed Matter, 673, 1–6. https://doi.org/10.1016/j.physb.2023.415362 (reposiTUm)

4.   Hadamek, T., Jorstad, N. P., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2023).
A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices.
Micromachines, 14(8), 1–14. https://doi.org/10.3390/mi14081581 (reposiTUm)

3.   Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Double Reference Layer STT-MRAM Structures With Improved Performance.
Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 (reposiTUm)

2.   Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., Sverdlov, V. (2022).
Finite Element Method for MRAM Switching Simulations.
WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 (reposiTUm)

1.   Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

18.   Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Back-Hopping in Ultra-Scaled MRAM Cells.
In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm)

17.   Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Micromagnetic Modeling of SOT-MRAM Dynamics.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

16.   Sverdlov, V., Jorstad, N., Bendra, M., Hadamek, T., Goes, W. (2023).
Modeling Emerging Spintronic Devices and Spintronic THz Emitters.
In Book of abstracts of the International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023) (pp. 50–51), Aizu-Wakamatsu, Japan. (reposiTUm)

15.   Jorstad, N., Hadamek, T., Bendra, M., Ender, J., Pruckner, B., Goes, W., Sverdlov, V. (2023).
Numerical Simulations of Spintronic Magnetoresistive Memories.
In SURGE Virtual Event North America 2023: Agenda (p. 1), Santa Clara, CA, United States. (reposiTUm)

14.   Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Numerical Study of Two-Terminal SOT-MRAM.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

13.   Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319650 (reposiTUm)

12.   Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N., Hadamek, T., Ender, J., Lacerda de Orio, R., Gös, W. (2023).
Spin and Charge Transport in Ultra-Scaled MRAM Cells.
In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (p. 55), Moscow-Zvenigorod, Russian Federation. https://doi.org/10.29003/m3563.ICMNE-2023 (reposiTUm)

11.   Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Study of Self-Heating and Its Effects in SOT-STT-MRAM.
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319549 (reposiTUm)

10.   Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Switching Composite Free Layers in Ultra-Scaled MRAM Cells.
In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm)

9.   Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023).
Switching Performance of Mo-Based pMTJ and dsMTJ Structures.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm)

8.   Bendra, M., Jorstad, N., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics.
In IEDM 2023 Special MRAM poster session, San Francisco, United States. (reposiTUm)

7.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Devices for Digital Spintronics.
In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm)

6.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Magneto-Resistive Memory.
In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm)

5.   Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm)

4.   Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W., Jorstad, N., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Modeling Advanced Spintronic Based Magnetoresistive Memory.
In International Conference on Microwave, THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm)

3.   Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S. (2022).
Modeling Approach to Ultra-Scaled MRAM Cells.
In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8), Taastrup, Copenhagen. (reposiTUm)

2.   Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach.
In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm)

1.   Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)