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Publications Vito Simonka

21 records

Publications in Scientific Journals

8.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., Weinbub, J. (2019).
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics.
IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929 (reposiTUm)

7.   Woerle, J., Šimonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., Grossner, U. (2019).
Surface Morphology of 4h-SiC After Thermal Oxidation.
Materials Science Forum, 963, 180–183. https://doi.org/10.4028/www.scientific.net/msf.963.180 (reposiTUm)

6.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018).
Empirical Model for Electrical Activation of Aluminum- And Boron-Implanted Silicon Carbide.
IEEE Transactions on Electron Devices, 65(2), 674–679. https://doi.org/10.1109/ted.2017.2786086 (reposiTUm)

5.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018).
Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide.
Materials Science Forum, 924, 192–195. https://doi.org/10.4028/www.scientific.net/msf.924.192 (reposiTUm)

4.   Šimonka, V., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide.
Journal of Applied Physics, 123(23), 235701. https://doi.org/10.1063/1.5031185 (reposiTUm)

3.   Šimonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation.
Solid-State Electronics, 128, 135–140. https://doi.org/10.1016/j.sse.2016.10.032 (reposiTUm)

2.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation.
The Journal of Physical Chemistry A, 121(46), 8791–8798. https://doi.org/10.1021/acs.jpca.7b08983 (reposiTUm)

1.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Growth Rates of Dry Thermal Oxidation of 4h-Silicon Carbide.
Journal of Applied Physics, 120(13), 135705. https://doi.org/10.1063/1.4964688 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

10.   Diamantopoulos, G., Manstetten, P., Gnam, L., Simonka, V., Aguinsky, L., Quell, M., Toifl, A., Hössinger, A., Weinbub, J. (2019).
Recent Advances in High Performance Process TCAD.
In CSE19 Abstracts (p. 335), Atlanta, GA, USA. (reposiTUm)

9.   Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4h-Silicon Carbide.
In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT) (pp. 42–44), Barcelona, Spain. (reposiTUm)

8.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551728 (reposiTUm)

7.  J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
"Surface Morphology of 4H-SiC After Thermal Oxidation";
Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 2018-09-02 - 2018-09-06; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018).

6.   Manstetten, P., Simonka, V., Diamantopoulos, G., Gnam, L., Makarov, A., Hössinger, A., Weinbub, J. (2017).
Computational and Numerical Challenges in Semiconductor Process Simulation.
In CSE17 Abstracts (p. 46), Atlanta, GA, USA. (reposiTUm)

5.  V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017).

4.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085280 (reposiTUm)

3.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440094 (reposiTUm)

2.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 128–129), Bologna, Italy. (reposiTUm)

1.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605190 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

2.   Simonka, V. (2018).
Advancements in Annealing and Oxidation Steps for Compound Semiconductor Power Devices.
Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual, Non-EU. (reposiTUm)

1.   Simonka, V. (2017).
Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav.
Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia, EU. (reposiTUm)

Doctor's Theses (authored and supervised)

1.  V. Simonka:
"Thermal Oxidation and Dopant Activation of Silicon Carbide";
Supervisor, Reviewer: S. Selberherr, J. Weinbub, Y. Hijikata, U. Schmid; Institut für Mikroelektronik, 2018; oral examination: 2018-11-05. https://doi.org/10.34726/hss.2018.60302