Staff Person Publications

Publications Vito Simonka

21 records

Publications in Scientific Journals

8.	A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub: "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics"; IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX
7.	J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Materials Science Forum, 963, (2019), 180 - 183 doi:10.4028/www.scientific.net/MSF.963.180. BibTeX
6.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide"; IEEE Transactions on Electron Devices, 65, (2018), 674 - 679 doi:10.1109/TED.2017.2786086. BibTeX
5.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Materials Science Forum, 924, (2018), 192 - 195 doi:10.4028/www.scientific.net/MSF.924.192. BibTeX
4.	V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide"; Journal of Applied Physics, 123, (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185. BibTeX
3.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation"; Journal of Physical Chemistry A, 121, (2017), 8791 - 8798 doi:10.1021/acs.jpca.7b08983. BibTeX
2.	V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation"; Solid-State Electronics, 128, (invited) (2017), 135 - 140 doi:10.1016/j.sse.2016.10.032. BibTeX
1.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide"; Journal of Applied Physics, 120, (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688. BibTeX

Contributions to Books

V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
"Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations";
in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", V. Sverdlov, S. Selberherr (ed); IEEE, 2016, ISBN: 978-1-4673-8608-1, 226 - 229 doi:10.1109/ULIS.2016.7440094. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

9.	G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub: "Recent Advances in High Performance Process TCAD"; Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 2019-02-25 - 2019-03-01; in "CSE19 Abstracts", (2019), 335. BibTeX
8.	A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub: "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 336 - 339 doi:10.1109/SISPAD.2018.8551728. BibTeX
7.	J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner: "Surface Morphology of 4H-SiC After Thermal Oxidation"; Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 2018-09-02 - 2018-09-06; in "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018), . BibTeX
6.	V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub: "Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide"; Talk: International Conference on Microelectronic Devices and Technologies (MicDAT), Barcelona, Spain; 2018-06-20 - 2018-06-22; in "Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT)", (2018), 42 - 44. BibTeX
5.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide"; Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017), . BibTeX
4.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 2017-09-07 - 2017-09-09; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2017), ISBN: 978-4-86348-612-6, 125 - 128 doi:10.23919/SISPAD.2017.8085280. BibTeX
3.	P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub: "Computational and Numerical Challenges in Semiconductor Process Simulation"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 46. BibTeX
2.	V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr: "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 233 - 236 doi:10.1109/SISPAD.2016.7605190. BibTeX
1.	V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr: "Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 128 - 129. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

2.	V. Simonka: "Advancements In Annealing And Oxidation Steps For Compound Semiconductor Power Devices"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA; (invited) 2018-10-09. BibTeX
1.	V. Simonka: "Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav"; Talk: Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia; (invited) 2017-01-26. BibTeX

Doctor's Theses (authored and supervised)

1.	V. Simonka: "Thermal Oxidation and Dopant Activation of Silicon Carbide"; Reviewer: S. Selberherr, J. Weinbub, Y. Hijikata, U. Schmid; Institut für Mikroelektronik, 2018, oral examination: 2018-11-05 doi:10.34726/hss.2018.60302. BibTeX