|Worked for the IµE from 01-12-2013 to 09-12-2018.|
Biography (as of 09-12-2018):
Gerhard Rzepa received a BSc degree in Electrical Engineering in 2010 and a Diplomingenieur degree in Microelectronics in 2013, both from the TU Wien (Vienna University of Technology). In 2018 he finished his PhD studies on the topic of modeling of bias temperature instabilities at the Institute for Microelectronics, TU Wien, and obtained his doctoral degree. He continues to work at the Institute for Microelectronics where he focuses on the research of oxide degradation, device variability and measuring and modeling of related reliability phenomena such as bias temperature instabilities, hot carrier degradation, random telegraph noise, and stress-induced leakage currents.