|Worked for the IµE from 01-01-2002 to 01-01-2004.|
Biography (as of 01-01-2004):
Sergey Smirnov was born in Skhodnya, Moscow Region, Russia, in 1976. He studied physics and technology of VLSI at the Moscow State Institute of Electronic Technology (MIET), where he received the degree of Master of Science in 1999. Afterwards he was a research fellow at MIET, where he studied the numerical simulation of semiconductor devices. He joined the Insitute for Microelectronics in January 2002, where he is currently working on his doctoral degree. His scientific interests include physical modeling of strained silicon/silicon-germanium devices, Monte Carlo methods, and solid-state theory.