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Stanislav Tyaginov
PhD, Senior Postdoc
Tel.Nr.: +43 1 58801-36025
Room Nr.: CD 05 11
tyaginov@remove-this.iue.tuwien.ac.remove-this.at

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Has been at the IµE since 15-01-2008.

Biography:

Stanislav Tyaginov was born in Leningrad (now Saint-Petersburg) in 1978. He received his MS degree in Physics (specialization: the physics of semiconductors) in 2002 and his Doctoral degree in Physics in 2006 (his PhD was devoted to the problem of the impact of insulator thickness non-uniformities on MOS tunnel structure characteristics). He joined the Institute for Microelectronics in January 2008 as a post-doc researcher. His scientific interests include the modeling of HCI-related degradation and TDDB as well as tunneling phenomena in MOS devices.



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Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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