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Modeling of Defect Related Reliability Phenomena in SiC Power-MOSFETs
Contents
Home
Abstract
Kurzfassung
List of Abbreviations
1 Introduction
1.1 MOSFETs in Power Conversion Applications
1.2 Reliability of MOSFETs
1.3 State of the Art, Motivation and Outline
2 SiC MOSFET Reliability Characterization
2.1 Electrical Characterization Methods
2.2 Peculiarities of SiC MOSFET Characterization
2.3 Measurement Setups
2.4 Magnetic Resonance Methods
2.5 Summary
3 Defects in SiC Field Effect Transistors
3.1 Defects in Bulk Silicon Dioxide
3.2 Defects at the Silicon Carbide / Silicon Dioxide Interface
3.3 The Role of Hydrogen
3.4 Nitrogen Related Defects
3.5 Summary
4 Modeling of Charge Transfer Reactions
4.1 From State Diagrams to the Master Equation
4.2 The Shockley-Read-Hall Model
4.3 Non-Radiative Multi-Phonon Theory
4.4 Two-State NMP Model for Trap-Trap Interaction
4.5 Efficient Framework for MOS Gate Leakage Currents
4.6 Compact Physics Framework (Comphy)
4.7 The Multi-TAT Regime
4.8 Effective Single Defect Decomposition
4.9 Summary
5 Measurements, Simulations and Results
5.1 Bias Temperature Instabilities in SiC MOSFETs
5.2 Trap-Assisted Tunneling Currents
5.3 Conclusions
6 Summary and Outlook
6.1 Summary
6.2 Outlook
References
List of Publications
