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Modeling of Defect Related Reliability Phenomena
in SiC Power-MOSFETs

List of Publications

Scientific Journals

  • [CSJ1] Maximilian Feil, Hans Reisinger, Andre Kabakow, Thomas Aichinger, Christian Schleich, Aleksandr Vasilev, Dominic Waldhoer, Michael Waltl, Wolfgang Gustin, and Tibor Grasser. “Electrically Stimulated Optical Spectroscopy of Interface Defects in Wide-Bandgap Field-Effect Transistors”. In: Communications Physics (). submitted.

  • [CSJ2] Christian Schleich, Dominic Waldhör, Theresia Knobloch, Bernhard Stampfer, Jakob Michl, Michael Waltl, and Tibor Grasser. “Single vs. Multi-Step Trap Assisted Tunneling Currents - Part I: Theory”. In: IEEE Transactions on Electron Devices 99.99 (2022). in-print. doi: 10.1109/TED.2022.3185966.

  • [CSJ3] Christian Schleich, Dominic Waldhör, Al-Moatasem El-Sayed, Konstantinos Tselios, Ben Kaczer, Tibor Grasser, and Michael Waltl. “Single vs. Multi-Step Trap Assisted Tunneling Currents - Part II: The Role of Polarons”. In: IEEE Transactions on Electron Devices 99.99 (2022). in-print. doi: 10.1109/TED.2022.3185965.

  • [CSJ4] Alexander Vasilev, Markus Jech, Alexander Grill, Gerhard Rzepa, Christian Schleich, Stanislav Tyaginov, Alexander Makarov, Gregor Pobegen, Tibor Grasser, and Michael Waltl. “TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs”. In: IEEE Transactions on Electron Devices (2022), pp. 1–6. doi: 10.1109/TED.2022.3166123.

  • [CSJ5] Michael Waltl, Yoanlys Hernandez, Christian Schleich, Katja Waschneck, Bernhard Stampfer, Hans Reisinger, and Tibor Grasser. “Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models”. In: Materials Science Forum 1062 (June 2022), pp. 688–695. doi: 10.4028/p-pijkeu.

  • [CSJ6] Christian Schleich, Dominic Waldhör, Katja Anna Waschneck, Maximilian Feil, H. Reisinger, Tibor Grasser, and Michael Waltl. “Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies”. In: IEEE Transactions on Electron Devices 68.8 (2021), pp. 4057–4063. doi: 10.1109/TED.2021.3092295. url: https://www.iue.tuwien.ac.at/pdf/ib_2021/JB2021_Schleich_1.pdf.

  • [CSJ7] Theresia Knobloch, Yury Illarionov, Fabian Ducry, Christian Schleich, Stefan Wachter, Kenji Watanabe, Takashi Taniguchi, Thomas Müller, Michael Waltl, Mario Lanza, M. I. Vexler, Mathieu Luisier, and Tibor Grasser. “The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials”. In: Nature Electronics 4.2 (2021), pp. 98–108. doi: 10.1038/s41928-020-00529-x. url: https://www.iue.tuwien.ac.at/pdf/ib_2021/JB2021_Knobloch_1.pdf.

  • [CSJ8] Dominic Waldhör, Christian Schleich, Jakob Michl, Bernhard Stampfer, Konstantinos Tselios, Eleftherios Ioannidis, H. Enichlmair, Michael Waltl, and Tibor Grasser. “Toward Automated Defect Extraction From Bias Temperature Instability Measurements”. In: IEEE Transactions on Electron Devices 68.8 (2021), pp. 4057–4063. doi: 10.1109/TED.2021.3091966. url: https://www.iue.tuwien.ac.at/pdf/ib_2021/JB2021_Waldhoer_1.pdf.

  • [CSJ9] Michael Waltl, Dominic Waldhoer, Konstantinos Tselios, Bernhard Stampfer, Christian Schleich, Gerhard Rzepa, Hubert Enichlmair, Eleftherios G. Ioannidis, Rainer Minixhofer, and Tibor Grasser. “Impact of single-defects on the variability of CMOS inverter circuits”. In: Microelectronics Reliability (2021), p. 114275. issn: 0026-2714. doi: https://doi.org/10.1016/j.microrel.2021.114275. url: https://www.sciencedirect.com/science/article/pii/S0026271421002419.

  • [CSJ10] Maximilian Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger, and Tibor Grasser. “The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters”. In: Crystals 10.12 (2020). invited, pp. 1143-1–1143-14. doi: 10.3390/cryst10121143. url: https://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Feil_1.pdf.

Conference Proceedings

  • [CSC1] Christian Schleich, Maximilian Feil, Dominic Waldhoer, Aleksandr Vasilev, Tibor Grasser, and Michael Waltl. “Lifetime projection of bipolar operation of SiC DMOSFET”. In: ICSCRM. accepted. Sept. 2022.

  • [CSC2] Aleksandr Vasilev, Maximilian Feil, Christian Schleich, Bernhard Stampfer, Gerhard Rzepa, Tibor Grasser, and Michael Waltl. “Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations”. In: ICSCRM. accepted. Sept. 2022.

  • [CSC3] Michael Waltl, Christian Schleich, Aleksandr Vasilev, Dominic Waldhoer, Bernhard Stampfer, and Tibor Grasser. “Physical Modelling of Charge Trapping Effects in SiC MOSFETs”. In: ICSCRM. invited. Sept. 2022.

  • [CSC4] Jakob Michl, Alexander Grill, Bernhard Stampfer, Dominic Waldhoer, Christian Schleich, Theresia Knobloch, Eleftherios Ioannidis, Hubert Enichlmair, Rainer Minixhofer, Ben Kaczer, B. Parvais, B. Govoreanu, I. Radu, Tibor Grasser, and Michael Waltl. “Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS”. In: 2021 IEEE International Electron Devices Meeting (IEDM). 2021, pp. 31.3.1–31.3.4. doi: 10.1109/IEDM19574.2021.9720501.

  • [CSC5] Judith Berens, M. Weger, Gregor Pobegen, T. Aichinger, Gerald Rescher, Christian Schleich, and Tibor Grasser. “Similarities and Differences of BTI in SiC and Si Power MOSFETs”. In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS). talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-03-29 – 2020-04-02. 2020, pp. 1–6. isbn: 978-1-7281-3200-6. doi: 10.1109/IRPS45951.2020.9129259. url: https://www.iue.tuwien.ac.at/pdf/ib_2020/CP2020_Berens_1.pdf.

  • [CSC6] Bernhard Ruch, Gregor Pobegen, Christian Schleich, and Tibor Grasser. “Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping”. In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS). talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28. 2020, pp. 1–6. isbn: 978-1-7281-3200-6. doi: 10.1109/IRPS45951.2020.9129513. url: https://www.iue.tuwien.ac.at/pdf/ib_2020/CP2020_Ruch_1.pdf.

  • [CSC7] Aleksandr Vasilev, Markus Jech, Alexander Grill, Gerhard Rzepa, Christian Schleich, Alexander Makarov, Gregor Pobegen, Tibor Grasser, Michael Waltl, and S. E. Tyaginov. “Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors”. In: Proceedings of the International Integrated Reliability Workshop (IIRW). talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 – 2020-10-08. 2020, pp. 1–4. doi: 10.1109/IIRW49815.2020.9312864. url: http://www.iue.tuwien.ac.at/pdf/ib_2020/CP2020_Vasilev_1.pdf.

  • [CSC8] Christian Schleich, Judith Berens, Gerhard Rzepa, Gregor Pobegen, Gerald Rescher, S. E. Tyaginov, Tibor Grasser, and Michael Waltl. “Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs”. In: Proceedings of the IEEE International Electron Devices Meeting (IEDM). talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 – 2019-12-11. 2019. doi: 10.1109/IEDM19573.2019.8993446. url: http://www.iue.tuwien.ac.at/pdf/ib_2019/CP2019_Schleich_1.pdf.

Master Thesis

  • [CST1] Christian Schleich. “Charakterisierung und Modellierung von SiC Transistoren”. MA thesis. Institut für Mikroelektronik, 2019.