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Modeling of Defect Related Reliability Phenomena
in SiC Power-MOSFETs

4.9 Summary

To summarize, within this chapter an NMP framework has been derived for calculating both charge trapping and charge hopping currents based on an efficient and minimal parameter modeling approach. Therefore, analytical expressions for a simple two-state NMP model to explain charge transfer between oxide defects and carrier reservoirs have been derived to enable large scale defect charge transfer computation. This approach has been implemented in the Compact Physics Framework (Comphy) for an efficient computation of both ∆Vth and IG as a result of the NMP charge transitions to and from defects in MOS stacks. Finally, the relevance of multi-TAT currents is quantified and it is found that defects with small \( E_\mathrm {R} \) at relatively large \( N_\mathrm {T} \) are required to conduct a significant current over multiple defects in 5 nm to 20 nm thick dielectrics. To enable an efficient defect parameter extraction for BTI and single-TAT studies a novel ESiD method is presented.