|
1D, 2D, 3D |
one-, two-, and three-dimensional |
|
Al |
aluminium |
|
ALD |
atomic layer deposition |
|
AFM |
atomic force microscopy |
|
B |
boron |
|
C |
carbon |
|
CrN |
chronium nitride |
|
CVD |
chemical vapor deposition |
|
ECD |
electrochemical deposition |
|
FA |
furnace annealing |
|
GaAs |
gallium arsenide |
|
GaN |
gallium nitride |
|
Ge |
germanium |
|
H2O |
dihydrogen oxide (water) |
|
IGBT |
insulated-gate bipolar transistors |
|
JFET |
junction-gate field-effect transistors |
|
LAMMPS |
large-scale atomic/molecular massively parallel simulator |
|
LED |
light emitting diode |
|
MBE |
molecular beam epitaxy |
|
MD |
molecular dynamics |
|
MESFET |
metal-semiconductor field-effect transistor |
|
MOSFET |
metal-oxide-semiconductor field-effect transistor |
|
N |
nitrogen |
|
NO |
nitric oxide |
|
O |
oxygen (element) |
|
O2 |
oxygen (molecule) |
|
P |
phosphorus |
|
PVD |
physical vapor deposition |
|
RBS |
Rutherford backscattering spectrometry |
|
ReaxFF |
reactive force-field |
|
RTA |
rapid thermal annealing |
|
SBD |
Schottky barrier diode |
|
Si |
silicon |
|
SiC |
silicon carbide |
|
Si2C |
disilicon carbide |
|
SiC2 |
silicon dicarbide |
|
SiO2 |
silicon dioxide |
|
TCAD |
technology computer-aided design |
|
TEM |
transmission electron microscopy |
|
Ti |
titanium |
|
TiAlN |
titanium aluminium nitride |
|
TiN |
titanium nitride |
|
QM |
quantum mechanics |
|
VSC-3 |
Vienna Scientific Cluster 3 |
|
W |
tungsten |
|
ZrN |
zirconium nitride |