This thesis addresses in particular modeling and simulation challenges of the two important fabrication processes of SiC, i.e., thermal oxidation and electrical activation of dopants.
Chapter 2 reviews the thermal oxidation of SiC, starting with the characteristics, properties, and structure of SiO2, followed by the fundamentals of the oxidation mechanisms. Next, the oxidation models, i.e., the Deal-Grove model, Massoud's model, and the Si and C emission model, are described in detail. The core of this chapter discusses growth rate coecients, tting, and calibration as well as the parametric and explicit expression of the unique interpolation method. Process simulations utilizing the obtained parameters and the proposed interpolation method are presented as well. Finally, ReaxFF molecular dynamics simulations and analyses of the early stage of the SiC oxidation are presented.
Chapter 3 reviews the electrical activation of dopants in SiC, first introducing fundamentals of semiconductor physics, which is needed to obtain donor or acceptor concentrations from ionized impurity concentrations. Next, the activation models, i.e., activation ratio model, semi-empirical model, and transient model, are presented. Each of the models includes a mathematical description, calibrations relative to experimental data, characterization of methodology, and finally process simulations followed by device simulations to validate the results.
Chapter 4 provides conclusions.