Activities Erasmus Langer Siegfried Selberherr Preface Elaf Al-Ani Surface Construction and Modification Tesfaye Ayalew Numerical Simulation of Wide Bandgap Semiconductor Devices Hajdin Ceric Development of an Interconnect Reliability Tool Martin Della Mea  Micro-Electromechanical Systems Siddhartha Dhar Modeling and Simulation of Strained Si CMOS Transistors Robert Entner  Three-Dimensional Device Simulation Including Quantum Correction Models Andreas Gehring  Modeling of Leakage, Wearout, and Breakdown of Gate Dielectrics  Klaus-Tibor Grasser  Macroscopic Transport Models Sub-100 nm Semiconductor Devices René Heinzl  Three-Dimensional Analytical Simulation of Ion Implantation Clemens Heitzinger Three-Dimensional Topography Simulation on the Feature Scale Christian Hollauer Three-Dimensional Simulation of Thermal Oxidation of Silicon Stefan Holzer Optimization and Inverse Modeling in TCAD Applications Andreas Hössinger  Full Three-Dimensional Process Simulation Gerhard Karlowatz  Full-Band Monte Carlo Device Simulation Robert Kosik  The Numerics of Higher Order Moment Methods for Device Simulation Hans Kosina  Modeling of Strain Effects and Quantum Devices Alexandre Nentchev Three-Dimensional Interconnect Simulation Vassil Palankovski Analysis and Simulation of Heterostructure Devices Mahdi Pourfath Three-Dimensional Simulation of Carbon Nanotube Transistors Philipp Schwaha Higher Order Moment Transport Models with Quantum Corrections Alireza Sheikoleslami A General Three-Dimensional Topography Simulator for Deposition and Etching Processes Viktor Sverdlov The Wigner Monte Carlo Method for Semiconductor Device Simulation Stephan Enzo Ungersböck  Self-Consistent Simulation of Universal Mobility in Strained Si MOSFETs Stephan Wagner  Simulation of Advanced RF Devices Wilfried Wessner Three-Dimensional Mesh Adaption Robert Wittmann  Monte Carlo Simulation of Ion Implantation in Relaxed SiGe
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