Activities
Erasmus Langer
Siegfried Selberherr
Preface
Oskar Baumgartner
VSP, an Efficient Design Tool for Quantum Cascade Lasers
Markus Bina
Reliability and Variability in MOS Devices
Hajdin Ceric
Atomistic Methods for Analysis of Electromigration
Johann Cervenka
Simulation of Process Variations of LDMOS Transistors
Lado Filipovic
Process Simulations using the Level Set Method with Monte Carlo
Wolfgang Gös
Gate Current Fluctuations in Nanoscale Devices
Klaus-Tibor Grasser
On the Frequency Dependence of the Bias Temperature Instability
Hossein Karamitaheri
Thermoelectric Engineering of Graphene Antidot Lattices
Hans Kosina
Numerical Modeling of Nanoelectronic Devices
Hiwa Mahmoudi
Spintronic Devices for Novel Memristive Sensing Schemes and Stateful Logic Applications
Alexander Makarov
Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations
Marian Molnar
Simulation of High Electron Mobility Transistors
Mahdi Moradinasab
Optical Properties of Graphene Nanoribbons
Mihail Nedjalkov
Physical Scales in the Wigner-Boltzmann Equation
Neophytos Neophytou
Modeling of Nanoscale Devices for Thermoelectric Applications
Roberto Orio
Electromigration Lifetime Extrapolation for Copper Dual-Damascene Interconnects
Dmitry Osintsev
Current and Conductance Modulation at Elevated Temperatures in Silicon and InAs-Based Spin Field-Effect Transistors
Vassil Palankovski
Analysis and Simulation of Advanced Heterostructure Devices
Mahdi Pourfath
Optical Properties of Graphene Nanoribbons Embedded in Boron Nitride
Karl Rupp
Three-Dimensional Simulation of Semiconductor Devices by Solving the Boltzmann Transport Equation
Franz Schanovsky
The Microscopic Limit of the Reaction-Diffusion Model
Anderson Singulani
Thermo-Mechanical Simulation of an Open TSV Technology
Zlatan Stanojevic
Convergent Modeling of Optoelectronic Nanostructures
Ivan Starkov
Accurate Modeling of Hot-Carrier Degradation
Viktor Sverdlov
Modeling Silicon Spintronic Devices
Oliver Triebl
Efficient Hot-Carrier Degradation Modeling using Macroscopic Transport Equations
Stanislav Tyaginov
An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation
Paul-Jürgen Wagner
Assessment of the Loss of Recoverable Component of NBTI
Michael Waltl
Bias Temperature Instability Parameter Extraction from the Time Dependent Defect Spectroscopy
Josef Weinbub
Parallel Task Graph Execution Framework for Semiconductor Device Simulation
Thomas Windbacher
Spintronics – Progressing Towards Future Memory Devices and Fully Nonvolatile Processing Systems
Wolfhard Zisser
Electromigration Simulations at the Atomistic Level
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