With the continuos downscaling of modern semiconductor devices, their critical dimensions have reached the decananometer regime. The validity of the classic drift-diffusion model, which is widely used in TCAD applications, cannot be generally ensured for this and upcoming device nodes. Conventionally, higher-order transport models are derived from the Boltzmann transport equation using the method of moments. Gate lengths down to 100nm can be covered by energy transport models, which consist of the first four moments of the Boltzmann transport equation. Recent research indicates that the important window of gate-lengths from 100 down to about 25nm can be covered by a six moments model or even higher-order moment models. A big advantage of the drift-diffusion model is that it contains only one transport parameter, the carrier mobility. This is not the case for higher-order transport models. In the case of the energy-transport model we have, in addition to the carrier mobility, the energy-flux mobility and the energy-relaxation time. Since these parameters cannot be directly measured, they have to be extracted from bulk Monte Carlo simulations. The fact that only modified surface mobility models are available is insufficient for higher-order transport models where, for instance, a drastic change in the energy-relaxation time inside the channel has to be accounted for in order to preserve the consistency of the model. A promising approach is based on the coupling of our subband Monte Carlo simulator VMC and our Schrödinger solver VSP which includes non-parabolic bands, surface roughness scattering, oxide charges, and strain effects. This combination is used for the extraction of the required parameters and as a reference simulator for ultra-short channel devices.