Conventional six-transistor CMOS SRAM cell structures are dominantly employed in today's cache memory blocks for advanced microprocessors. The long-term stability of such a memory cell is strongly affected by NBTI (negative bias temperature instability) induced degradation of p-MOSFET parameters (e.g., threshold voltage). The AC degradation is significantly lower than the DC degradation, since interface traps generated during the on-state of the transistor are partially annealed in the off-state. Although several NBTI models have been developed to explain the physics of interface trap generation based on electrochemical reactions and activation energies, only the reaction-diffusion (R-D) model can explain the power-law time dependence of the parameter degradation. The two p-MOSFETs in a 6T-SRAM cell are unsymmetrically NBT stressed by the stored bit values (only one of them is "on"). We have determined the lifetime extension related to the DC lifetime of the cell as a function of the probability for storing one bit between 100% (DC stress) and 50% (symmetric AC stress) every second. The NBTI response to random bit sequences is numerically simulated with a calibrated reaction-diffusion model. Germanium has regained attention in the semiconductor industry as a potential future replacement for silicon in high-performance CMOS applications. Recently, Ge-based MOS transistors with a mobility improvement three times that of silicon devices were successfully processed using a high-k dielectric. However, the accurate simulation of ion implantation processes in Ge is required for the optimization of doping profiles in such CMOS applications. We studied boron implantation in Ge by using our Monte Carlo ion implantation simulator MCIMPL-II and SIMS measurements. The multi-dimensional simulator is based on the BCA method and uses the universal ZBL potential. The larger nuclear and electronic stopping power of Ge is responsible for the shallower boron profile in Ge. The generated point defects and amorphized regions in the crystal are estimated by using a modified Kinchin-Pease model. We found that the higher displacement energy in Ge, the stronger backscattering effect, and the smaller energy transfer from the ion to the primary recoil of a cascade are mainly responsible for the significantly reduced damage in Ge. The simulated point responses revealed that the boron distribution is significantly reduced in Ge in the vertical direction while the lateral profile is quite similar in Si and Ge.