• [BK-2] K. Kim, J. Weinbub, M. Everitt:
  "Book of Abstracts of the 4^th International Wigner Workshop";
  Institute for Microelectronics, TU Wien, (2021), ISBN: 978-3-9504738-2-7, 75 page(s).
  
  
• [BK-1] M. Nedjalkov, I. Dimov, S. Selberherr:
  "Stochastic Approaches to Electron Transport in Micro- and Nanostructures";
  Springer Nature Switzerland AG, (2021), ISBN: 978-3-030-67916-3, 230 page(s) doi:10.1007/978-3-030-67917-0.
  
  

• [PJ-35] W. Auzinger, H. Hofstätter, O. Koch, M. Quell:
  "Adaptive Time Propagation for Time-Dependent Schrödinger Equations";
  International Journal of Applied and Computational Mathematics, 7 (2021), 6-1 - 6-14 doi:10.1007/s40819-020-00937-9.
  
  
• [PJ-34] M. Benam, M. Ballicchia, J. Weinbub, S. Selberherr, M. Nedjalkov:
  "A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling";
  Journal of Computational Electronics, 20 (2021), 775 - 784 doi:10.1007/s10825-020-01643-x.
  
  
• [PJ-33] H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
  "Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects";
  ECS Journal Of Solid State Science And Technology, 10 (2021), 035003-1 - 035003-11 doi:10.1149/2162-8777/abe7a9.
  
  
• [PJ-32] J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
  "Emerging CMOS Compatible Magnetic Memories and Logic";
  IEEE Journal of the Electron Devices Society, 9 (2021)(invited), 456 - 463 doi:10.1109/JEDS.2021.3066679.
  
  
• [PJ-31] M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser:
  "On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices";
  IEEE Transactions on Electron Devices, 68 (2021), 236 - 243 doi:10.1109/TED.2020.3036321.
  
  
• [PJ-30] L. Filipovic, S. Selberherr:
  "Microstructure and Granularity Effects in Electromigration";
  IEEE Journal of the Electron Devices Society, 9 (2021)(invited), 476 - 483 doi:10.1109/JEDS.2020.3044112.
  
  
• [PJ-29] S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
  "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
  Solid-State Electronics, 186 (2021)(invited), 108103 doi:10.1016/j.sse.2021.108103.
  
  
• [PJ-28] T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
  "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
  Nature Electronics, 4 (2021), 98 - 108 doi:10.1038/s41928-020-00529-x.
  
  
• [PJ-27] R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
  "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
  IEEE Journal of the Electron Devices Society, 9 (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544.
  
  
• [PJ-26] R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
  "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
  Micromachines, 12 (2021), 443 doi:10.3390/mi12040443.
  
  
• [PJ-25] R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
  "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
  Solid-State Electronics, 185 (2021)(invited), 108075 doi:10.1016/j.sse.2021.108075.
  
  
• [PJ-24] M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub:
  "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes";
  Journal of Computational and Applied Mathematics, 392 (2021), 113488-1 - 113488-15 doi:10.1016/j.cam.2021.113488.
  
  
• [PJ-23] A. Saleh, H. Ceric, H. Zahedmanesh:
  "Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model";
  Journal of Applied Physics, 129 (2021), 125102-1 - 125102-17 doi:10.1063/5.0039953.
  
  
• [PJ-22] A. Shah, M. Waltl:
  "Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits";
  International Journal Of Numerical Modelling-Electronic Networks Devices And Fields, 34 (2021), e2854-1 - e2854-13 doi:10.1002/jnm.2854.
  
  
• [PJ-21] A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub:
  "Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates";
  Semiconductor Science and Technology, 36 (2021), 045016-1 - 045016-12 doi:10.1088/1361-6641/abe49b.
  
  
• [PJ-20] K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl:
  "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors";
  IEEE Transactions on Device and Materials Reliability, 91 (2021)(invited), 199 - 206 doi:10.1109/TDMR.2021.3080983.
  
  
• [PJ-19] J. Berens, G. Pobegen, T. Grasser:
  "Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs";
  Materials Science Forum, 1004 (2020), 652 - 658 doi:10.4028/www.scientific.net/MSF.1004.652.
  
  
• [PJ-18] M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser:
  "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters";
  Crystals, 10 (2020)(invited), 1143-1 - 1143-14 doi:10.3390/cryst10121143.
  
  
• [PJ-17] D.K. Ferry, M. Nedjalkov, J. Weinbub, M. Ballicchia, I. Welland, S. Selberherr:
  "Complex Systems in Phase Space";
  Entropy, 22 (2020)(invited), 1103-1 - 1103-19 doi:10.3390/e22101103.
  
  
• [PJ-16] S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
  "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
  Proceedings of SPIE, 11470 (2020)(invited), 50 - 56 doi:10.1117/12.2567480.
  
  
• [PJ-15] S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
  "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
  IEEE Journal of the Electron Devices Society, 8 (2020)(invited), 1249 - 1256 doi:10.1109/JEDS.2020.3023577.
  
  
• [PJ-14] A. Hartwig, E. Boman, R. Falgout, P. Ghysels, M. Heroux, X. Li, L. McInnes, R. Mills, S. Rajamanickam, K. Rupp, B. Smith, I. Yamazaki, U. Meier Yang:
  "Preparing Sparse Solvers for Exascale Computing";
  Philosophical Transactions of The Royal Society A, 378 (2020)(invited), 20190053-1 - 20190053-14 doi:10.1098/rsta.2019.0053.
  
  
• [PJ-13] Yu. Illarionov, T. Knobloch, T. Grasser:
  "Native High-k Oxides for 2D Transistors";
  Nature Electronics, 3 (2020), 442 - 443 doi:10.1038/s41928-020-0464-2.
  
  
• [PJ-12] Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser:
  "Insulators for 2D Nanoelectronics: The Gap to Bridge";
  Nature Communications, 11 (2020), 3385 doi:10.1038/s41467-020-16640-8.
  
  
• [PJ-11] M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
  "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V_G, V_D} Bias Space: Implications and Peculiarities";
  IEEE Transactions on Electron Devices, 67 (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749.
  
  
• [PJ-10] A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
  "Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach";
  Micromachines, 11 (2020), 675 doi:10.3390/mi11070657.
  
  
• [PJ-9] G. Raut, A. Shah, V. Sharma, G. Rajput, S. Vishvakarma:
  "A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture";
  Circuits Systems and Signal Processing, 39 (2020), 4681 - 4694 doi:10.1007/s00034-020-01371-4.
  
  
• [PJ-8] B. Ruch, G. Pobegen, T. Grasser:
  "Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping";
  IEEE Transactions on Electron Devices, 67 (2020), 4092 - 4098 doi:10.1109/TED.2020.3018091.
  
  
• [PJ-7] B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
  "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays";
  IEEE Transactions on Device and Materials Reliability, 20 (2020)(invited), 251 - 257 doi:10.1109/TDMR.2020.2985109.
  
  
• [PJ-6] V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
  "Ballistic Conductance in a Topological 1T '-MoS₂ Nanoribbon";
  Semiconductors (Physics of Semiconductor Devices), 54 (2020)(invited), 1713 - 1715 doi:10.1134/S1063782620120386.
  
  
• [PJ-5] V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
  "Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T´ Phase";
  IEEE Transactions on Electron Devices, 67 (2020), 4687 - 4690 doi:10.1109/TED.2020.3023921.
  
  
• [PJ-4] A. Toifl, M. Quell, X. Klemenschits, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy";
  IEEE Access, 8 (2020), 115406 - 115422 doi:10.1109/ACCESS.2020.3004136.
  
  
• [PJ-3] M. Waltl:
  "Reliability of Miniaturized Transistors from the Perspective of Single-Defects";
  Micromachines, 11 (2020)(invited), 736-1 - 736-21 doi:10.3390/mi11080736.
  
  
• [PJ-2] M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser:
  "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors";
  Microelectronics Reliability, 114 (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746.
  
  
• [PJ-1] C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza:
  "Dielectric Properties of Ultrathin CaF₂ Ionic Crystals";
  Advanced Materials, 32 (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525.
  
  

• [BC-9] S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
  "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
  in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365497.
  
  
• [BC-8] R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
  "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
  in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365283.
  
  
• [BC-7] V. Sverdlov, A.-M. El-Sayed, S. Selberherr, H. Kosina:
  "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel";
  in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365289.
  
  
• [BC-6] M. Benam, M. Wołoszyn, S. Selberherr:
  "Self-Consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach";
  in: "Advanced Computing in Industrial Mathematics, Studies in Computational Intelligence", I. Georgiev, H. Kostadinov, E. Lilkova (ed); Springer, 2021, ISBN: 978-3-030-71615-8, 60 - 67 doi:10.1007/978-3-030-71616-5_7.
  
  
• [BC-5] V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
  "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k·p Study";
  in: "Proceedings of the 27st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); IEEE, 2020, ISBN: 978-83-63578-17-6, 168 - 171 doi:10.23919/MIXDES49814.2020.9155676.
  
  
• [BC-4] G. Indalecio, H. Kosina:
  "Monte Carlo Simulation of Electron-Electron Interactions in Bulk Silicon";
  in: "Scientific Computing in Electrical Engineering, Mathematics in Industry", G. Nicosia, V. Romano (ed); Springer International Publishing, 2020, ISBN: 978-3-030-44100-5, 125 - 131 doi:10.1007/978-3-030-44101-2_12.
  
  
• [BC-3] M. Quell, G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
  "Parallel Correction for Hierarchical Re-Distancing Using the Fast Marching Method";
  in: "Advances in High Performance Computing, Studies in Computational Intelligence", I. Dimov, S. Fidanova (ed); Springer International Publishing, 2020, ISBN: 978-3-030-55347-0, 438 - 451 doi:10.1007/978-3-030-55347-0_37.
  
  
• [BC-2] V. Sverdlov, S. Selberherr:
  "A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping";
  in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", I. Lirkov, S. Margenov (ed); Springer International Publishing, 2020, ISBN: 978-3-030-41031-5, 446 - 453 doi:10.1007/978-3-030-41032-2_51.
  
  
• [BC-1] R. Kosik, J. Cervenka, M. Thesberg, H. Kosina:
  "A Revised Wigner Function Approach for Stationary Quantum Transport";
  in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", I. Lirkov, S. Margenov (ed); Springer International Publishing, 2020, ISBN: 978-3-030-41031-5, 403 - 410 doi:10.1007/978-3-030-41032-2_46.
  
  

• [CP-36] C. Lenz, A. Scharinger, M. Quell, P. Manstetten, A. Hössinger, J. Weinbub:
  "Evaluating Parallel Feature Detection Methods for Implicit Surfaces";
  Talk: Austrian-Slovenian HPC Meeting (ASHPC), Maribor, Slovenia (Virtual); 31.05.2021 - 02.06.2021; in "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2021), 31.
  
  
• [CP-35] F. Ribeiro, K. Rupp, T. Grasser:
  "Parallel Solver Study for Solving the Boltzmann Transport Equation using Spherical Harmonics Expansions on Supercomputers";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), 97 - 98.
  
  
• [CP-34] F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Hössinger, J. Weinbub:
  "Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 24.05.2021 - 06.06.2021; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), 101 - 102.
  
  
• [CP-33] M. Ballicchia, M. Benam, M. Nedjalkov, S. Selberherr, J. Weinbub:
  "Modeling Coulomb Interaction with a 'Wigner-Poisson' Coupling Scheme";
  Talk: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2021), 64 - 65.
  
  
• [CP-32] R. Kosik, J. Cervenka, H. Kosina:
  "Open Boundary Conditions for the Wigner and the Characteristic von Neumann Equation";
  Talk: International Wigner Workshop (IW2), Daejeon, Korea (Virtual); 17.05.2021 - 21.05.2021; in "Book of Abstracts of the International Wigner Workshop (IW2)", (2021), 42 - 43.
  
  
• [CP-31] J. Weinbub, M. Ballicchia, M. Nedjalkov, S. Selberherr:
  "Electromagnetic Coherent Electron Control";
  Talk: IEEE Latin America Electron Devices Conference (LAEDC), virtual; (invited) 19.04.2021 - 21.04.2021; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2021), 1 - 4 doi:10.1109/LAEDC51812.2021.9437949.
  
  
• [CP-30] Yu. Illarionov, A. Banshchikov, N. S. Sokolov, V. V. Fedorov, S. M. Suturin, M. I. Vexler, T. Knobloch, D.K Polyushkin, T. Mueller, T. Grasser:
  "Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D Materials";
  Talk: Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia; (invited) 08.04.2021; (2021).
  
  
• [CP-29] L. Filipovic:
  "Modeling and Simulation of ALD in a Level Set Framework";
  Talk: EFDS Workshop on Simulation for ALD, virtual; (invited) 25.03.2021; in "Proceedings of the EFDS Workshop on Simulation for ALD", (2021), 9.
  
  
• [CP-28] J. Weinbub, M. Ballicchia, M. Nedjalkov:
  "Single Electron Control for Quantum Interference Devices";
  Talk: Summer School on Methods and Models of Kinetic Theory - Winter Prelude, Porto Ercole, Italy - virtual; (invited) 08.02.2021 - 10.02.2021; (2021).
  
  
• [CP-27] B. Ruch, M. Jech, G. Pobegen, T. Grasser:
  "Applicability of Shockley-Read-Hall Theory for Interface States";
  Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 12.12.2020 - 18.12.2020; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), 449 - 452.
  
  
• [CP-26] M. Waltl:
  "Spectroscopy of Single Defects in Semiconductor Transistors";
  Talk: International Conference on Materials Science and Engineering (MatScience), San Francisco, CA, USA - virtual; (invited) 05.11.2020 - 06.11.2020; in "Book of Abstracts of the International Conference on Materials Science and Engineering (MatScience)", (2020).
  
  
• [CP-25] V. Sverdlov:
  "Modeling Spin Transfer Torque Magnetoresistive Memory";
  Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 20.10.2020; in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020).
  
  
• [CP-24] A. Toifl:
  "Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine";
  Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 20.10.2020; in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020).
  
  
• [CP-23] K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl:
  "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 6 doi:10.1109/IIRW49815.2020.9312871.
  
  
• [CP-22] A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov:
  "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 04.10.2020 - 08.10.2020; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864.
  
  
• [CP-21] V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
  "Ballistic Conductance in a Topological 1T´-MoS₂ Nanoribbon";
  Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 28.09.2020 - 02.10.2020; in "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), 200 - 201.
  
  
• [CP-20] J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
  "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216 doi:10.23919/SISPAD49475.2020.9241662.
  
  
• [CP-19] L. Filipovic:
  "Electromigration Model for Platinum Hotplates";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 315 - 318 doi:10.23919/SISPAD49475.2020.9241645.
  
  
• [CP-18] S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
  "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212 doi:10.23919/SISPAD49475.2020.9241657.
  
  
• [CP-17] X. Klemenschits, S. Selberherr, L. Filipovic:
  "Geometric Advection Algorithm for Process Emulation";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 59 - 62 doi:10.23919/SISPAD49475.2020.9241678.
  
  
• [CP-16] R. Kosik, J. Cervenka, H. Kosina:
  "Numerical Solution of the Constrained Wigner Equation";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 189 - 191 doi:10.23919/SISPAD49475.2020.9241624.
  
  
• [CP-15] H. Kosina, V. Sverdlov:
  "Analytical Formulae for the Surface Green´s Functions of Graphene and 1T´ MoS2 Nanoribbons";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 185 - 188 doi:10.23919/SISPAD49475.2020.9241650.
  
  
• [CP-14] D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser:
  "Machine Learning Prediction of Formation Energies in a-SiO2";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609.
  
  
• [CP-13] A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub:
  "Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 23.09.2020 - 06.10.2020; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 39 - 42 doi:10.23919/SISPAD49475.2020.9241615.
  
  
• [CP-12] R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov:
  "Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents";
  Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 13.09.2020 - 16.09.2020; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), 58 - 61.
  
  
• [CP-11] S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
  "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020 - 30.09.2020; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113.
  
  
• [CP-10] R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
  "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020 - 30.09.2020; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124.
  
  
• [CP-9] V. Sverdlov, H. Kosina:
  "Topologically Protected and Conventional Subbands in a 1T´-MoS₂ Nanoribbon Channel";
  Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 01.09.2020 - 30.09.2020; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 68 - 69.
  
  
• [CP-8] S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
  "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
  Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 24.08.2020 - 28.08.2020; in "Proceedings of SPIE Spintronics", (2020), 11470-44.
  
  
• [CP-7] M. Ballicchia, M. Nedjalkov, J. Weinbub:
  "Single Electron Control by a Uniform Magnetic Field in a Focusing Double-Well Potential Structure";
  Talk: IEEE International Conference on Nanotechnology (NANO), Montreal, Canada - virtual; 29.07.2020 - 31.07.2020; in "Proceedings of the IEEE International Conference on Nanotechnology (NANO)", (2020), 73 - 76 doi:10.1109/NANO47656.2020.9183565.
  
  
• [CP-6] V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
  "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study";
  Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 25.06.2020 - 27.06.2020; in "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), 58.
  
  
• [CP-5] Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser:
  "Low Variability and 10¹⁰ On/Off Current Ratio in Flexible MoS₂ FETs with Al₂O₃ Encapsulation Improved by Parylene N";
  Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25.
  
  
• [CP-4] T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
  "The Impact of the Graphene Work Function on the Stability of Flexible GFETs";
  Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 24.06.2020 - 26.06.2020; in "Proceedings of the Electronic Materials Conference (EMC)", (2020).
  
  
• [CP-3] Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser:
  "Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics";
  Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in "Proceedings of the Device Research Conference (DRC)", (2020), 1 - 2 doi:10.1109/DRC50226.2020.9135160.
  
  
• [CP-2] Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser:
  "Anomalous Instabilities in CVD-MoS₂ FETs Suppressed by High-Quality Al₂O₃ Encapsulation";
  Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151.
  
  
• [CP-1] T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser:
  "Analysis of Single Electron Traps in Nano-scaled MoS₂ FETs at Cryogenic Temperatures";
  Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 21.06.2020 - 24.06.2020; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53.
  
  

• [DT-4] J. Berens:
  "Carrier Mobility and Reliability of 4H-SiC Trench MOSFETs";
  Reviewer: T. Grasser, J. Cooper, P. Pichler; E360, 2020, oral examination: 22.12.2020.
  
  
• [DT-3] M. Jech:
  "The Physics of Non-Equilibrium Reliability Phenomena";
  Reviewer: T. Grasser, M. Luisier, A. Bravaix; E360, 2020, oral examination: 19.11.2020.
  
  
• [DT-2] K. Waschneck:
  "Modeling Bias Temperature Instability in Si and SiC MOSFETs using Activation Energy Maps";
  Reviewer: T. Grasser, J. Schmitz, S. Reggiani; E360, 2020, oral examination: 07.12.2020.
  
  
• [DT-1] B. Stampfer:
  "Advanced Electrical Characterization of Charge Trapping in MOS Transistors";
  Reviewer: T. Grasser, M. Nafria Maqueda, F. M. Puglisi; E360, 2020, oral examination: 04.12.2020.
  
  

• [MT-1] N. Freiberger:
  "Design, Development, and Analysis of a Comprehensive DNA En-and Decoding Open Source Program using Python";
  Supervisor: J. Weinbub, D. Iurashev; Fachhochschule Wiener Neustadt und Institut für Mikroelektronik, 2020, final examination: 17.09.2020.
  
  

• [BT-4] M. Steinhauser:
  "Einfluss des Magnetfeldes auf das Trappingverhalten von Einzeldefekten in Feldeffekttransistoren";
  Supervisor: M. Waltl, T. Grasser, C. Schleich; Institut für Mikroelektronik, 2021.
  
  
• [BT-3] J. Wiesböck
  "Signalgenerator für Defektspektroskopie in Halbleitertransistoren";
  Supervisor: M. Waltl, T. Grasser; Institut für Mikroelektronik, 2021.
  
  
• [BT-2] A. Adel
  "Numerische Behandlung einer Diffusionsgleichung mit Segregationsbedingung mithilfe der Finiten-Differenzen-Methode";
  Supervisor: H. Ceric; Institut für Mikroelektronik, 2020.
  
  
• [BT-1] M. F. Kern
  "Random Walk und Festkörperdiffusion";
  Supervisor: H. Ceric; Institut für Mikroelektronik, 2020.